CN109738705A - A kind of capacitor capacitance decaying detection method - Google Patents
A kind of capacitor capacitance decaying detection method Download PDFInfo
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- CN109738705A CN109738705A CN201811639816.3A CN201811639816A CN109738705A CN 109738705 A CN109738705 A CN 109738705A CN 201811639816 A CN201811639816 A CN 201811639816A CN 109738705 A CN109738705 A CN 109738705A
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- 239000013589 supplement Substances 0.000 claims description 15
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Abstract
The invention discloses a kind of capacitor capacitance decaying detection methods, are related to low voltage power capacitor field, include the following steps: the current waveform data for detecting each phase, calculate the current fundamental current virtual value of the phase;The voltage waveform data for detecting each phase calculates the current fundamental voltage RMS of the phase;Calculate the specified fundamental current virtual value that each capacitor corresponds to phase;Calculate current fundamental current virtual value under the voltage rating of each phase;Current fundamental current virtual value obtains capacitance attenuation ratio divided by the specified fundamental current virtual value of the phase under the voltage rating of each phase, and method provided by the present invention is not necessarily to artificial detection, and precision is high.
Description
[technical field]
The invention belongs to low voltage power capacitor field, in particular to a kind of capacitor capacitance decaying detection method.
[background technique]
In the prior art, low voltage parallel capacitor is substantially " self-healing " metal film capacitor, when occurring puncturing or leak
Electric fault can be automatically repaired.But the capacity of capacitor may reduce.If the capacity fall of capacitor less and
It is that three-phase is in a basic balance, then can continues to put into operation.If the capacity of capacitor declines excessive or three-phase electricity capacity unbalance,
The capacitor that then must more renew.
The capacitor decayed, current value can be lower than load current value.Therefore, to know the capacitor to put into operation
Capacitance whether reduce, the prior art generally uses clamp on amperemeter, manually check the operating current of corresponding capacitor and with
Rated current data on its label are made comparisons, and are judged whether to need replacing capacitor according to error size.
And this detection mode in the prior art, need power distribution room operator periodically to open capacitor cabinet door, in capacitor
Device put into operation state when with clamp on amperemeter manual inspection and compare load current value, this provides for improved the peaces to operator
The requirement of full protection and professional standards.Meanwhile generally having multiple unit capacitor in capacitor box, every group capacitor is required to measure,
Therefore workload is huge.Also, the fluctuation and harmonic voltage, electric current due to network voltage will affect the measured value of electric current,
Therefore, the accuracy of the capacitance current detected with clamp on amperemeter is lower.
In addition, the capacitance attenuation change of capacitor both may be long-term slow process, it is also possible to be sent out at the time of unexpected
Raw qualitative change, therefore, the method for manual measurement not only waste of manpower resource, but also consuming working hour.
[summary of the invention]
To solve foregoing problems, the present invention provides a kind of capacitor capacitance decaying detection methods, without manually being examined
It surveys, the attenuation change of capacitor can be calculated.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
A kind of capacitor capacitance decaying detection method, the method are used to calculate the capacitance attenuation ratio of three-phase separate-supplement capacitor
Example, the three-phase separate-supplement capacitor includes the capacitor being parallel between each phase and zero phase, be the described method comprises the following steps:
Step 1: the current waveform data of each phase is obtained, and the phase is calculated according to the current waveform data of the phase
Current fundamental current virtual value;
Step 2: the voltage waveform data of each phase is obtained, and the phase is calculated according to the voltage waveform data of the phase
Current fundamental voltage RMS;
Step 3: according to the voltage rating of each capacitor and rated capacity calculate each capacitor corresponding to phase specified base
Wave current effective value;
Step 4: the current fundamental current virtual value of each phase obtains the phase multiplied by the current voltage correction factor of the phase
Current fundamental current virtual value, the current voltage correction factor of the phase are the electricity being parallel between the phase and zero phase under voltage rating
The ratio of the load voltage value of appearance and the current fundamental voltage RMS of the phase;
Step 5: current fundamental current virtual value is effective divided by the specified fundamental current of the phase under the voltage rating of each phase
Value obtains the current attenuation ratio that each capacitor corresponds to phase at it, and the current attenuation ratio is the capacitance attenuation ratio
Example.
Further, the current waveform data in step 1 includes the current values of several sampled points, by dividing benefit capacitor
Current sampling circuit is obtained from ADC sampling channel.
Optionally, the voltage waveform data in step 2 includes the voltage value of several sampled points, by dividing benefit capacitor electric
Sample circuit is pressed to obtain from ADC sampling channel.
Optionally, in step 1, the current fundamental current for calculating each phase using FFT Fast Fourier Transform (FFT) is effective
Value.
Optionally, in step 2, the current fundamental voltage for calculating each phase using FFT Fast Fourier Transform (FFT) is effective
Value.
Optionally, voltage rating, the relationship of rated capacity and specified fundamental current virtual value in step 3 are as follows:Wherein, U1For voltage rating, Q1For rated capacity, I1For specified fundamental current virtual value.
Optionally, each phase of the three-phase separate-supplement capacitor is in series with reactor.
Further, voltage rating, rated capacity and specified fundamental current virtual value after current-limiting reactor, in step 5
Relationship are as follows:Wherein, U2For voltage rating, Q2For rated capacity, I2For specified fundamental wave electricity
Virtual value is flowed, K is reactance Rate, and the reactance Rate is the reactance value of the reactor and the capacitor value of the three-phase separate-supplement capacitor
The ratio between.
The invention has the following beneficial effects:
Capacitor capacitance decaying detection method provided by the present invention, it is real by single-chip microcontroller and corresponding sample circuit
The real time automatic detection and calculating of capacitor capacitance attenuation ratio are showed.Also, method provided by the present invention, passes through single-chip microcontroller
And corresponding sample circuit, can external liquid crystal display be not necessarily to by the dampening information of liquid crystal display interface display capacitor
Therefore operator's manual measurement current value reduces the requirement to operator, decrease the workload of operator.
Meanwhile method provided by the present invention goes back network-connectable by single-chip microcontroller and corresponding sample circuit, realization remotely exists
Line monitoring capacitor capacitance dampening information, it is ensured that the real-time that capacitor capacitance decaying condition information obtains is not necessarily to operator
Member is often detected to scene, and human resources and corresponding working hour are saved.
The detection method in addition, capacitor capacitance provided by the present invention decays, due to using single-chip microcontroller and adopting accordingly
Sample circuit is sampled and is detected, therefore, in terms of the measurement accuracy of the data such as voltage and current, people compared to the prior art
Work detection accuracy improves several times.
Also, the present invention has also connected in each phase reactor, and influence three-phase separate-supplement can be filtered out by reactor
The harmonic wave and clutter of capacitor service life extend the service life of three-phase separate-supplement capacitor.
These features and advantages of the invention will carry out detailed take off in following specific embodiment and attached drawing
Dew.The optimal embodiment of the present invention or means will carry out detailed performance in conjunction with attached drawing, but be not to technical solution of the present invention
Limitation.In addition, it is each be with these features, element and the component occurred in attached drawing hereafter have it is multiple, and in order to indicate
Different symbol or number conveniently is marked, but indicates the component of same or similar construction or function.
[Detailed description of the invention]
The present invention will be further explained below with reference to the attached drawings:
Fig. 1 is the schematic block circuit diagram of the embodiment of the present invention one;
Fig. 2 is the schematic block circuit diagram of the embodiment of the present invention two.
Wherein, 1- divides benefit capacitor, 11- first capacitor device, the second capacitor of 12-, 13- third capacitor, the first electricity of 14-
Anti- device, the second reactor of 15-, 16- third reactor, 2- power circuit, 3- divide benefit capacitor A phase current sampling circuit, 31-A
Phase current mutual inductor, 4- divide benefit capacitor B phase current sampling circuit, 41-B phase current mutual inductor, and 5- divides benefit capacitor C phase current
Sample circuit, 51-C phase current mutual inductor, 6- points are mended condenser voltage sample circuit, the detection of 7- magnetic latching relay switch state
And control circuit, the first relay of 71-, the second relay of 72-, 72- third relay, 8- single-chip microcontroller, 91- liquid crystal display,
92-RS485 circuit.
[specific embodiment]
The technical solution of the embodiment of the present invention is explained and illustrated below with reference to the attached drawing of the embodiment of the present invention, but under
It states embodiment to be merely a preferred embodiment of the present invention, and not all.Based on the implementation example in the implementation mode, those skilled in the art
Obtained other embodiments without making creative work, belong to protection scope of the present invention.
" one embodiment " or " example " or " example " mean that itself is described in conjunction with the embodiments quoted in this specification
A particular feature, structure, or characteristic can be included at least one embodiment disclosed in this patent.Phrase is " in one embodiment
In " appearance of each position in the description is not necessarily all referring to the same embodiment.
Combined with specific embodiments below, and in conjunction with attached drawing, further description of the technical solution of the present invention:
Embodiment one:
The present embodiment provides a kind of capacitor capacitance decaying detection method, the capacitance for calculating three-phase separate-supplement capacitor declines
Subtract ratio, the functional block diagram of used circuit is as shown in Figure 1:
In the circuit used in the present embodiment, A phase, B phase, C phase is in star-like connection, is powered by power circuit 2.Electricity
Source circuit 2 is the components such as power supply circuit commonly used in the art, including transformer, rectifier, voltage-stablizer, belongs to the existing of this field
Technology, it is not limited here.It is parallel with first capacitor device 11 between A phase and zero phase, is parallel with second between B phase and zero phase
Capacitor 12 is parallel with third capacitor 13, first capacitor device 11, the second capacitor 12 and third electricity between C phase and zero phase
Container 13 collectively forms a point benefit capacitor 1.Circuit used in the present embodiment further includes a point benefit capacitor A phase current sampling circuit
3, point benefit capacitor B phase current sampling circuit 4, divide benefit capacitor C phase current sampling circuit 5, divide benefit capacitor A phase current sampling
Circuit 3 is equipped with A phase current mutual inductor 31, for acquiring A phase current, benefit capacitor B phase current sampling circuit 4 is divided to be equipped with B phase electricity
Current transformer 41 divides benefit capacitor C phase current sampling circuit 5 to be equipped with C phase current mutual inductor 51, is used for for acquiring B phase current
Acquire C phase current.The voltage between voltage (hereinafter referred to as A phase voltage), B phase and zero phase between A phase and zero phase is (hereinafter referred to as
B phase voltage), the voltage (hereinafter referred to as C phase voltage) between C phase and zero phase mends a condenser voltage sample circuit 6 by point and carries out
Acquisition.Voltage sampling circuit used in the present embodiment and current sampling circuit belong to the state of the art, can adopt
With forms such as operational amplifier, metering chips, it is not limited here.In the circuit used in the present embodiment, A phase is equipped with first
Relay 71, B phase are equipped with the second relay 72, and C phase is equipped with third relay 73, and be control the first relay 71, second after
The disconnection and closure of electric appliance 72 and third relay 73, circuit used in the present embodiment are additionally provided with magnetic latching relay switch
State-detection and control circuit 7, by form control the first relay 71, the second relay 72 and third of voltage pulse after
Electric appliance 73.The detection of magnetic latching relay switch state and control circuit 7 belong to the prior art, herein also without limitation.Power supply electricity
Road 2, point benefit capacitor A phase current sampling circuit 3, point benefit capacitor B phase current sampling circuit 4, a point benefit capacitor C phase current are adopted
Sample circuit 5, point mend condenser voltage sample circuit 6 and magnetic latching relay switch state detection and control circuit 7 with list
Piece machine 8 connects, and is controlled by single-chip microcontroller 8.In the present embodiment, single-chip microcontroller 8 is produced using STMicroelectronics Ltd.
The identical single-chip microcontroller of the produced function of other suppliers can also be used, it is not limited here in STM8S207RBT6 model single-chip microcontroller.
In order to carry out the expansion of function, single-chip microcontroller 8 has been also connected with liquid crystal display 91, to show the dampening information of capacitor, RS485 circuit
92, to realize network connection.
Detection method includes the following steps for the decaying of capacitor capacitance provided by the present embodiment:
Step 1: the current waveform data of A phase is obtained, the current fundamental wave of A phase is calculated using FFT Fast Fourier Transform (FFT)
Current effective value;The current waveform data for obtaining B phase, the current fundamental current of A phase is calculated using FFT Fast Fourier Transform (FFT)
Virtual value;The current waveform data of C phase is obtained, the current fundamental current for calculating A phase using FFT Fast Fourier Transform (FFT) is effective
Value.
In step 1, current waveform data includes that the current values of several sampled points are adopted altogether specific in the present embodiment
With 32 sampled points.Current waveform data is adopted by a point benefit capacitor A phase current sampling circuit 3, a point benefit capacitor B phase current
Sample circuit 4 and divide benefit capacitor C phase current sampling circuit 5 respectively from respective ADC sampling channel obtain, ADC sampling channel with
And the state of the art is belonged to using FFT Fast Fourier Transform (FFT).
Step 2: the voltage waveform data of A phase is obtained, the current fundamental wave of A phase is calculated using FFT Fast Fourier Transform (FFT)
Voltage effective value;The voltage waveform data for obtaining B phase, the current fundamental voltage of B phase is calculated using FFT Fast Fourier Transform (FFT)
Virtual value;The voltage waveform data of C phase is obtained, the current fundamental voltage for calculating C phase using FFT Fast Fourier Transform (FFT) is effective
Value.
In step 2, voltage waveform data includes that the voltage value of several sampled points is adopted altogether specific in the present embodiment
With 32 sampled points.Voltage waveform data is by point benefit condenser voltage sample circuit 6 respectively from the ADC of A phase, B phase, C phase
Sampling channel obtains, and ADC sampling channel and use FFT Fast Fourier Transform (FFT) belong to the state of the art.
Step 3: had according to the specified fundamental current that the voltage rating of first capacitor device 11 and rated capacity calculate A phase
Valid value;The specified fundamental current virtual value of B phase is calculated according to the voltage rating of the second capacitor 12 and rated capacity;According to
The voltage rating and rated capacity of three capacitors 13 calculate the specified fundamental current virtual value of C phase.
In step 3, the relationship of voltage rating, rated capacity and specified fundamental current virtual value are as follows:Its
In, U is voltage rating, and Q is rated capacity, and I is specified fundamental current virtual value.
Step 4: the current fundamental current virtual value of A phase obtains the specified of A phase multiplied by the current voltage correction factor of A phase
Current fundamental current virtual value under voltage, the current voltage correction factor of A phase are the load voltage value and A phase of first capacitor device 11
Current fundamental voltage RMS ratio;
The current fundamental current virtual value of B phase multiplied by the current voltage correction factor of B phase obtain under the voltage rating of B phase when
Preceding fundamental current virtual value, the current voltage correction factor of B phase are the load voltage value and the current base of B phase of the second capacitor 12
The ratio of wave voltage virtual value;
The current fundamental current virtual value of C phase multiplied by the current voltage correction factor of C phase obtain under the voltage rating of C phase when
Preceding fundamental current virtual value, the current voltage correction factor of C phase are the load voltage value and the current base of C phase of third capacitor 13
The ratio of wave voltage virtual value.
Step 5: current fundamental current virtual value is obtained divided by the specified fundamental current virtual value of A phase under the voltage rating of A phase
To first capacitor device 11 in the current attenuation ratio of A phase, this current attenuation ratio is that first capacitor device declines in the capacitance of A phase
Subtract ratio;
Current fundamental current virtual value obtains second divided by the specified fundamental current virtual value of B phase under the voltage rating of B phase
For capacitor 12 in the current attenuation ratio of B phase, this current attenuation ratio is capacitance attenuation ratio of second capacitor in B phase
Example;
Current fundamental current virtual value obtains third divided by the specified fundamental current virtual value of C phase under the voltage rating of C phase
For capacitor 13 in the current attenuation ratio of C phase, this current attenuation ratio is capacitance attenuation ratio of the third capacitor in C phase
Example.
It needs it is to be noted that each of the above walks, by the control completion of single-chip microcontroller 8.
Embodiment two:
The present embodiment is what is different from the first embodiment is that each phase of three-phase separate-supplement capacitor 1 is in series with reactor.Specifically
Into the present embodiment, be connected in series the first reactor 14, B of A is connected in series and has the second reactor 15, and C, which is connected in series, third reactor
16.After current-limiting reactor, the relationship of voltage rating, rated capacity and specified fundamental current virtual value in step 5 are as follows:Wherein, U2For voltage rating, Q2For rated capacity, I2For specified fundamental current virtual value, K
For reactance Rate, the reactance Rate is the reactance value of the reactor and the ratio between the capacitor value of three-phase separate-supplement capacitor.
In the present embodiment, each phase is in series with reactor, and can be filtered out by reactor influences three-phase separate-supplement capacitor
The harmonic wave and clutter of device service life extend the service life of three-phase separate-supplement capacitor.
More than, only a specific embodiment of the invention, but scope of protection of the present invention is not limited thereto, is familiar with this
The technical staff in field should be understood that the present invention including but not limited to attached drawing and above content described in specific embodiment.Appoint
The modification for why not deviateing function and structure principle of the invention is intended to be included in the range of claims.
Claims (8)
- The detection method 1. a kind of capacitor capacitance decays, which is characterized in that the method is for calculating three-phase separate-supplement capacitor Capacitance attenuation ratio, the three-phase separate-supplement capacitor include the capacitor being parallel between each phase and zero phase, the method includes Following steps:Step 1: the current waveform data of each phase is obtained, and the current of the phase is calculated according to the current waveform data of the phase Fundamental current virtual value;Step 2: the voltage waveform data of each phase is obtained, and the current of the phase is calculated according to the voltage waveform data of the phase Fundamental voltage RMS;Step 3: according to the voltage rating of each capacitor and rated capacity calculate each capacitor corresponding to phase specified fundamental wave electricity Flow virtual value;Step 4: the current fundamental current virtual value of each phase obtains the specified of the phase multiplied by the current voltage correction factor of the phase Current fundamental current virtual value, the current voltage correction factor of the phase are the capacitor being parallel between the phase and zero phase under voltage The ratio of load voltage value and the current fundamental voltage RMS of the phase;Step 5: current fundamental current virtual value is obtained divided by the specified fundamental current virtual value of the phase under the voltage rating of each phase The current attenuation ratio for corresponding to phase at it to each capacitor, the current attenuation ratio is the capacitance attenuation ratio.
- The detection method 2. capacitor capacitance according to claim 1 decays, it is characterised in that: the current waveform in step 1 Data include the current values of several sampled points, mend condenser current sample circuit by point and obtain from ADC sampling channel.
- The detection method 3. capacitor capacitance according to claim 1 decays, it is characterised in that: the voltage waveform in step 2 Data include the voltage value of several sampled points, mend condenser voltage sample circuit by point and obtain from ADC sampling channel.
- The detection method 4. capacitor capacitance according to claim 1 decays, it is characterised in that: in step 1, using FFT Fast Fourier Transform (FFT) calculates the current fundamental current virtual value of each phase.
- The detection method 5. capacitor capacitance according to claim 1 decays, it is characterised in that: in step 2, using FFT Fast Fourier Transform (FFT) calculates the current fundamental voltage RMS of each phase.
- The detection method 6. capacitor capacitance according to claim 1 decays, it is characterised in that: voltage rating in step 3, The relationship of rated capacity and specified fundamental current virtual value are as follows:Wherein, U1For voltage rating, Q1For specified appearance Amount, I1For specified fundamental current virtual value.
- The detection method 7. capacitor capacitance according to claim 1 decays, it is characterised in that: the three-phase separate-supplement capacitor Each phase be in series with reactor.
- The detection method 8. capacitor capacitance according to claim 7 decays, it is characterised in that: after current-limiting reactor, step The relationship of voltage rating, rated capacity and specified fundamental current virtual value in five are as follows: Wherein, U2For voltage rating, Q2For rated capacity, I2For specified fundamental current virtual value, K is reactance Rate, and the reactance Rate is institute State the reactance value of reactor and the ratio between the capacitor value of the three-phase separate-supplement capacitor.
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Address after: Room 1103-1, 11th Floor, Building 1, Aoqiang Building, No. 6 Xiyuan Fifth Road, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province, 310030 Patentee after: Zhejiang Nande Electric Group Co.,Ltd. Address before: 310000 3rd floor, 2nd floor, block B, Fuhua building, sujiaba 21, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province Patentee before: ZHEJIANG NANDA ELECTRICAL Co.,Ltd. |