CN109734048B - Processing method of near-infrared photoelectric device - Google Patents

Abstract

The invention provides a near-infrared photoelectric device and a processing method thereof, relating to the technical field of processing and manufacturing. The near-infrared photoelectric device comprises a silicon substrate, a plurality of nano optical antennas, two electrodes and a nanowire, wherein the plurality of nano optical antennas and the two electrodes are arranged on the surface of the silicon substrate, all the nano optical antennas are positioned between the two electrodes, two ends of the nanowire are respectively connected with the two electrodes, and the nanowire is in contact with at least one nano optical antenna. The invention further provides a processing method of the near-infrared photoelectric device. The gap between the large disk and the small disk in the same nano optical antenna can excite plasmon polariton when being illuminated, can capture and enhance incident light, widens the response wavelength range of the device, improves the concentration of carriers in the nano wire, and further improves the optical and electrical properties of the device.

Description

Processing method of near-infrared photoelectric device

Technical Field

The invention relates to the technical field of processing and manufacturing, in particular to a processing method of a near-infrared photoelectric device.

Background

With the increasing demand for the integration level of chips and electronic devices in various fields, the feature size of electronic devices is continuously decreasing. However, conventional electronic devices using semiconductor materials such as silicon as the basic material face a great challenge: on the one hand, according to predictions, the feature size of conventional electronic devices will stop decreasing in the future; on the other hand, as the characteristic size enters the nanometer level, the traditional electronic device has the problems of thermal effect, size effect and the like, and the performance and the application of the electronic device are seriously influenced. In recent years, nanomaterials are considered as basic components of future novel electronic devices due to excellent mechanical, electrical and optical properties, and electronic devices based on nanomaterials are expected to break through the defects of traditional electronic devices, so that high-performance integrated circuits and microelectronic devices can be manufactured. Therefore, the realization of electronic devices based on nanomaterials is an important direction for the development of future electronic information technology. At present, researchers at home and abroad have developed various types of principle electronic devices based on nano materials. Among them, the photoelectric device responding to near infrared wavelength is an important basic component in the fields of national defense, communication, medical treatment and the like, so that the realization of the manufacturing of the photoelectric device has great significance. At present, the research on the near-infrared wavelength response photoelectric device based on the nano material has the defects, such as slow response speed, weak photoelectric response capability and the like of the device.

Disclosure of Invention

In view of this, the present invention is directed to a near infrared optoelectronic device, and the technical solution of the present invention is implemented as follows:

a near infrared photoelectric device comprises a silicon substrate, a nano optical antenna, electrodes and a nanowire, wherein the electrodes comprise a first electrode and a second electrode, the nano optical antenna and the electrodes are arranged on the surface of the silicon substrate, all the nano optical antennas are located between the first electrode and the second electrode, two ends of the nanowire are respectively connected with the first electrode and the second electrode, and the nanowire is in contact with the nano optical antenna.

Optionally, the nano-optical antenna comprises: the disc comprises a large disc and a plurality of small discs, wherein the small discs are arranged on the outer side of the large disc along the circumferential array of the large disc.

Optionally, the gap d between the large disk and the small disk is 15 nm.

Optionally, the material of the nanowire is silicon.

Optionally, there are a plurality of the nano-optical antennas, and the material of the nano-optical antenna is gold.

Compared with the prior art, the nano connecting device has the following advantages:

the near-infrared photoelectric device can respond to a near-infrared band of 700nm-1500nm, and has the advantages of large photocurrent, high response rate and short response time.

The gap between the large disk and the small disk in the same nano optical antenna can excite plasmon polariton when being illuminated, can capture and enhance incident light, widens the response wavelength range of the device, improves the concentration of carriers in the nano wire, and further improves the optical and electrical properties of the device.

The invention also provides a processing method of the near-infrared photoelectric device, and the technical scheme of the invention is realized as follows:

a processing method of a near infrared photoelectric device comprises the following steps:

s1: obtaining a substrate with a calibration pattern;

s2; preparing a photoelectric device substrate by using the substrate with the calibration pattern;

s3: calibrating the electron beam with the optoelectronic device substrate;

s4: preparing a photoelectric device structure on the photoelectric device substrate;

s5: and connecting the nano wire with the electrode, and contacting the nano wire with the nano optical antenna to finish the preparation of the near-infrared photoelectric device.

Optionally, the step of S1 includes:

coating electron beam glue on the surface of the substrate to prepare an electron beam calibration glue layer;

heating the electron beam calibration adhesive layer to cure the electron beam calibration adhesive layer;

designing a calibration pattern by using an industrial personal computer;

the calibration pattern is engraved on the electron beam calibration adhesive layer in an electron beam exposure mode;

developing, removing the electron beam glue in the exposure area of the electron beam calibration glue layer;

evaporating a gold layer on the calibration pattern area;

and removing all the electron beam calibration glue layers to obtain the substrate with the calibration pattern.

Optionally, the step of S2 includes:

preparing an electron beam adhesive layer on one side of the substrate, which is provided with the calibration pattern, wherein the electron beam adhesive layer completely covers the calibration pattern;

heating the electron beam adhesive layer to cure the electron beam adhesive layer;

exposing the electron beam glue layer, wherein an exposure area covers the calibration pattern;

and developing, namely removing the electron beam glue on the exposure area of the electron beam glue layer to obtain the photoelectric device substrate.

Optionally, the step of S4 includes:

keeping the parameters of an electron beam unchanged, and engraving a structural pattern of a photoelectric device outside an exposure area of an electron beam adhesive layer, wherein the photoelectric device structure comprises two electrodes and a plurality of nano optical antennas positioned between the two electrodes;

developing, removing the electron beam adhesive layer in the structural pattern area of the photoelectric device;

evaporating a gold layer on the pattern area of the photoelectric device structure;

and removing the electron beam adhesive layer to finish the preparation of the photoelectric device structure.

Alternatively, the step S3 is performed in a vacuum environment.

Compared with the prior art, the processing method of the near-infrared photoelectric device has the following advantages:

the invention calibrates the electron beam emission and regulation and control module through the calibration pattern and then prepares the photoelectric device structure, the shape of the disc in the nano optical antenna structure is complete, the edge of the nano disc is neat and has no other residual impurities, and the size of the gap between different nano discs is uniform. In addition, the electron beam exposure time is shortened after parameter calibration, and compared with the traditional exposure time, the electron beam exposure time is shortened by 50%.

The invention carries out vacuum-pumping treatment on the vacuum environment sample cavity during calibration, so that the electron beam is in a vacuum working environment, and the precision of the electron beam is improved; and moving the coarse positioning sample stage to adjust the nano optical antenna substrate to a set position, wherein the nano optical antenna substrate is positioned under the electron beam objective lens, and then finely adjusting the nano optical antenna substrate through the fine positioning sample stage to increase the space margin of the fine positioning sample stage.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate an embodiment of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:

FIG. 1 is a front view of a nano-interconnect device according to an embodiment of the present invention;

FIG. 2 is a top view of a nano-connector device according to an embodiment of the present invention;

FIG. 3 is an isometric view of a nano-connector device according to an embodiment of the invention;

FIG. 4 is a top view of a near-field light generating device according to an embodiment of the present invention;

FIG. 5 is an enlarged view of a portion of FIG. 4 at I according to an embodiment of the present invention;

FIG. 6 is an internal view of a vacuum chamber of an embodiment of the present invention;

FIG. 7 is an isometric view of a nano-manipulation device of an embodiment of the present invention;

FIG. 8 is an enlarged view of a portion of FIG. 7 at II in accordance with an embodiment of the present invention;

FIG. 9 is a schematic diagram of an implementation-side mounting structure according to an embodiment of the present invention;

FIG. 10 is an isometric view of another effector end mounting structure in accordance with an embodiment of the present invention;

FIG. 11 is an isometric view of a second motion mechanism of an embodiment of the invention;

FIG. 12 is an isometric view of a first motion mechanism of an embodiment of the invention;

FIG. 13 is an isometric view of a sample stage according to an embodiment of the present invention;

FIG. 14 is an isometric view of a coarse positioning sample stage of an embodiment of the present invention;

FIG. 15 is an isometric view of a precision positioning sample stage according to an embodiment of the present invention;

FIG. 16 is a cross-sectional view of a vacuum chamber of an embodiment of the present invention;

FIG. 17 is a schematic structural diagram of a nano-optical antenna according to an embodiment of the present invention;

FIG. 18 is a schematic structural view of a near infrared optoelectronic device according to an embodiment of the present invention;

FIG. 19 is a schematic diagram of the nanowire connection location relationship according to an embodiment of the present invention;

FIG. 20 is a flow chart of a method of fabricating a near infrared photovoltaic device according to an embodiment of the present invention;

FIG. 21 is a flow chart of a nanowire connection method according to an embodiment of the present invention;

fig. 22 is a flowchart of a method for connecting a nanowire to an electrode according to an embodiment of the present invention.

Description of reference numerals:

101-vacuum chamber, 102-electron beam emission and regulation module, 103-electron beam objective, 104-photodetector module, 105-protective gas introduction device, 106-CCD camera, 107-control device, 108-display device, 201-coarse positioning sample stage, 202-fine positioning sample stage, 203-first movement mechanism, 204-second movement mechanism, 205-AFM probe, 206-tungsten needle connector, 207-tungsten needle, 208-AFM probe connector, 209-third rotating member, 210-second rotating member, 211-first rotating member, 212-first rotating connector, 213-third sliding block, 214-second sliding block, 215-first sliding block, 216-fixed block, 217-base, 218-fifth sliding member, 219-sixth translation element, 220-seventh translation element, 221-fifth rotation element, 222-fourth rotation element, 223-connection seat, 224-eighth translation element, 225-ninth translation element, 226-tenth translation element, 227-fixing element, 228-installation block, 229-connection rod, 230-connection block, 301-laser, 302-laser parameter amplifier, 303-optical fiber coupler, 304-optical fiber, 305-optical vibration isolation platform, 306-laser power stabilizer, 307-laser beam-shrinking mirror, 308-laser power monitor, 309-detection beam splitter, 310-laser polarizer, 311-laser absorber, 312-attenuation beam splitter, 313-reflector, 314-display, 315-mirror, 316-first reflector, 317-a second reflector, 318-an optical fiber probe connecting piece, 319-an optical fiber probe, 320-a collimator connecting piece, 321-an optical fiber collimator, 1-a large disc, 2-a small disc, 3-a first electrode, 4-a nanowire, 5-a nanometer optical antenna, 6-a silicon substrate and 7-a second electrode.

Detailed Description

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.

In addition, all directions or positional relationships mentioned in the embodiments of the present invention are positional relationships based on the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not imply or imply that the referred device or element must have a specific orientation, and are not to be construed as limiting the present invention.

The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

Example one

A nanometer connecting device is shown in figures 1 to 3 and comprises a vacuum cavity 101, a near-field light generating device, a nanometer operating device and a control device 107, wherein the near-field light generating device comprises a vacuum cavity laser emitting device and an execution end, and the nanometer operating device comprises a sample stage and an execution end operating device; the nanometer operation device is arranged in the vacuum chamber 101, the execution end is connected with the execution end operation device, and the near-field light generation device and the nanometer operation device are respectively connected with the control device 107; the sample table is suitable for moving a sample, and the execution end operation device is suitable for driving the execution end to move.

In practical operation, a sample placing position is arranged on the sample table, the silicon wafer is placed at the sample placing position, and the control device controls the sample table to move so as to initially position the silicon wafer. After the initial positioning of the sample stage is completed, the control device controls the action of the execution end operation device, so that the execution end is moved to a proper position, and then the nanowire and the nanoparticle are connected. The arrangement has the advantages that the electron beam imaging precision is improved through the vacuum cavity 101, the operation and connection process is visually imaged in real time, and the connection precision of the nano wires and the nano particles is further improved; the sample stage moves the silicon wafer, so that the silicon wafer is arranged in an electron beam detection range, the execution end operation device operates the nanowires and the nanoparticles, and the sample stage and the execution end operation device are in double cooperation, so that the operation flexibility of the nanowires and the nanoparticles is better, the motion space of the nanowires and the nanoparticles is wider, and the connection precision of the nanowires and the nanoparticles is improved.

The nano connecting device further comprises a display device 108, and the display device 108 is connected with the control device 107 and is suitable for displaying real-time data and images. Alternatively, an industrial personal computer may be used instead of the control device 107.

Example two

As described above, the present embodiment is different from the above embodiments in that, as shown in fig. 1 to 4, the near-field light generating device includes: the laser device comprises a laser emitting device, a fiber coupler 303 and an execution end, wherein the laser emitting device is suitable for generating a laser beam, the fiber coupler 303 is connected with the execution end through an optical fiber 304, and the fiber coupler 303 is suitable for coupling the laser beam into the optical fiber 304; the execution end is suitable for generating near-field light by using the laser beam.

This has the advantage that the spatially free laser beam is coupled into the optical fibre 304 via the fibre coupler 303 and is then transferred to the actuation end via the optical fibre 304 by means of the connection of the optical fibre 304 to the actuation end.

As shown in fig. 1 to 4, the laser emitting device and the optical fiber coupler 303 are disposed outside the vacuum chamber 101, the laser emitting device is adapted to generate a laser beam, the optical fiber coupler 303 is connected to the execution end through an optical fiber 304, and the optical fiber coupler 303 is adapted to couple the laser beam into the optical fiber 304; the execution end is disposed inside the vacuum chamber 101, and the execution end is adapted to generate near-field light using the laser beam.

It should be noted that, as shown in fig. 2 to 4, the laser emitting device is adapted to generate a laser beam, and the laser emitting device is located outside the vacuum chamber 101 and disposed on the optical isolation platform 305 to prevent the vibration from interfering with the laser path. The vacuum chamber 101 can adjust the vacuum degree, improve the electron beam imaging precision, and protect the sample from being oxidized. Here, a side wall of the vacuum chamber 101 is provided with a vacuum flange, and the optical fiber 304 enters the vacuum chamber 101 after passing through the vacuum flange from outside the vacuum chamber 101. The vacuum chamber 101 is adapted to provide a vacuum generating environment, improve the electron beam imaging accuracy, and protect the sample from oxidation.

The advantage of such an arrangement is that the laser generator is arranged outside the vacuum chamber 101, which facilitates adjustment of laser parameters, and the near-field light power can be changed by adjusting the laser generator, so as to obtain the near-field light required by three-dimensional nano operation and connection; the execution end is provided inside the vacuum chamber 101, and laser light is introduced into the vacuum chamber 101 through an optical fiber, thereby generating near-field light inside the vacuum chamber 101.

EXAMPLE III

As shown in fig. 1 to 4, the present embodiment is different from the above-mentioned embodiment in that the laser emitting device includes a laser 301 and a laser parameter amplifier 302, the laser 301 is adapted to emit the laser beam, the laser beam is emitted from the laser 301 and then enters the laser parameter amplifier 302, and the laser parameter amplifier 302 is adapted to control the wavelength of the laser beam. The benefit of this arrangement is that the wavelength of the laser beam is controlled by the setting of the laser parameter amplifier 302.

Optionally, as shown in fig. 3 and 4, the laser emitting device further includes a reflecting mirror 313, a mirror surface 315 of the reflecting mirror 313 and the laser beam emitted by the laser 301 present a set angle, and the reflecting mirror 301 is adapted to reflect the laser beam emitted by the laser 301 to the laser parameter amplifier 302. This has the advantage that the laser beam is reflected by the mirror 313 to a predetermined position after being emitted, which can save working space. It should be noted that the laser beam is reflected by the mirror 313 before entering the laser parameter amplifier 302. Here, as shown in fig. 5, the reflecting mirror 313 includes a first reflecting mirror 316 and a second reflecting mirror 317, a mirror surface of the first reflecting mirror 316 is perpendicular to a mirror surface of the second reflecting mirror, the laser beam emitted by the laser 301 passes through the first reflecting mirror 316 and is reflected to the second reflecting mirror 317, and the laser beam passes through the second reflecting mirror and is reflected to the laser parameter amplifier 302. Alternatively, the reflecting mirror 313 may be a combination of a plurality of mirrors, but the purpose is the same, and all of the mirrors are used for reflecting the laser beam to a set position. Through the cooperation of a plurality of speculum, make the change of light path tend to nimble, increase workstation utilization space.

Optionally, as shown in fig. 3 and 4, the laser emitting device further includes an attenuation beam splitter 312, and the attenuation beam splitter 312 is adapted to attenuate the power of the laser beam. It should be noted that the laser beam is emitted from the laser 301, and then reflected by the reflecting mirror 313 to enter the laser parameter amplifier 302, the laser parameter amplifier 302 is emitted to the attenuation beam splitter 312, and the attenuation beam splitter 312 with different attenuation ratios is replaced to implement laser power attenuation with different ratios. Here, the attenuation spectroscope is selected according to needs, and may be selected in any ratio between 0% and 100%, such as 50% or 98%. The laser light is divided into a plurality of beams by the attenuation beam splitter 312, and different operations are performed on the laser light, respectively.

Optionally, the laser emitting device further includes a laser polarizer 310, and the laser polarizer 310 is adapted to polarize the laser beam to obtain laser light with different polarization directions. Here, the laser emitting device further includes a laser absorber 311, and the laser absorber 311 is adapted to absorb the remaining laser beam to avoid causing light pollution. It should be noted that the laser beam is emitted from the laser 301, and then reflected by the reflecting mirror 313 to enter the laser parameter amplifier 302, the laser parameter amplifier 302 is emitted to the attenuation beam splitter 312, and is divided into laser beams with a set power ratio in the attenuation beam splitter 312, the attenuation beam splitter 312 only divides the laser beam into laser beams with different ratios, and the required laser beams with a set ratio are polarized by the laser polarizer 310; the remaining laser light that has not passed through the laser polarizer 310 is incident on the laser absorber 311 and absorbed. The advantage of providing a beam splitter here is that a laser beam of the required power is obtained, and the remaining laser light is absorbed by the laser absorber 311.

Optionally, as shown in fig. 3 and 4, the laser emitting device further includes a detection beam splitter 309, and the laser beam is proportionally split by the detection beam splitter 309. It should be noted that the laser beam is emitted from the laser 301, and then reflected by the reflecting mirror 313 to enter the laser parameter amplifier 302, the laser parameter amplifier 302 is emitted to the attenuation beam splitter 312, and is divided into laser beams with a set power ratio in the attenuation beam splitter 312, the attenuation beam splitter 312 only divides the laser beam into laser beams with different ratios, the laser beam with a required set ratio is polarized by the laser polarizer 310, and the laser beam enters the detection beam splitter 309, and is split again, so as to facilitate various subsequent operations.

Optionally, the laser emitting device comprises a laser beam shrinking mirror 307, which is adapted to shrink the spot of the laser beam. Here, the laser emitting device further includes a laser power monitor 308 and a display 314, and the laser power monitor 308 and the display 314 are communicatively connected. It should be noted that the laser beam is emitted from the laser 301, and then reflected by the reflecting mirror 313 to enter the laser parameter amplifier 302, the laser parameter amplifier 302 is emitted to the attenuation beam splitter 312, and is divided into laser beams with a set power ratio in the attenuation beam splitter 312, the attenuation beam splitter 312 only divides the laser beam into laser beams with different ratios, the required laser beams with a set power ratio are polarized by the laser polarizer 310, the laser beam is emitted to the detection beam splitter 309, and is split again, where the laser beam is divided into two beams, one of the laser beams enters the laser beam reducer 307, and the other enters the laser power monitor 308. This has the advantage that by directing a proportion of the laser beam to the laser power monitor 308 and displaying it on the display 314, the power of another portion of the laser beam directed to the laser beam attenuator 307 is monitored because of the constant total power of the laser beam.

Optionally, as shown in fig. 3 and 4, the laser emitting device includes a laser power stabilizer 306 adapted to reduce noise of the laser beam power. It should be noted that the laser beam is emitted from the laser 301, and then reflected by the reflecting mirror 313 to enter the laser parameter amplifier 302, the laser parameter amplifier 302 is emitted to the attenuation beam splitter 312, and is divided into laser beams with a set power ratio in the attenuation beam splitter 312, the attenuation beam splitter 312 only divides the laser beam into laser beams with different ratios, the required laser with a set power ratio is polarized by the laser polarizer 310, the laser beam is emitted to the detection beam splitter 309, and is split again, wherein one of the laser beams is emitted to the laser beam splitter 307, then is emitted to the laser power stabilizer 306, passes through the laser power stabilizer 306, and is emitted to the fiber coupler 303, and after passing through the fiber coupler 303, and is incident to the execution end through the optical fiber 304, so that a stable light beam suitable for nanometer operation and connection is obtained.

Example four

As shown in fig. 8 and 9, the embodiment is different from the above embodiment in that the executing end includes a fiber probe 319, one end of the fiber probe 319 is connected to the optical fiber 304, and the other end is provided with a small hole with a diameter of nanometer. It should be noted that, since the optical fiber 304 is connected to the optical fiber probe 319, the laser beam passes through the optical fiber probe 319 and then exits from the small hole at the end of the optical fiber probe 319, and since the diameter of the small hole is nanometer, the near-field light can be generated after the laser beam passes through the small hole.

Optionally, as shown in fig. 8 and 9, the executing end further includes a tungsten needle 207, a surface of the tungsten needle is plated with a gold layer, the tungsten needle 207 is located in the irradiation range of the near-field light, and the tungsten needle 207 is adapted to enhance the near-field light. Here, the tungsten needle 207 may be replaced with an AFM probe 205, and the tungsten needle 207 and the AFM probe 205 have the same tip of a nanometer scale.

As shown in fig. 9 to fig. 12, the optical fiber probe 319 is connected to the optical fiber probe connector 318, a groove is provided on the optical fiber probe connector 318, the optical fiber probe 319 can be matched with the groove by means of plugging or bonding, and the optical fiber probe 319 is connected to the operation device at the execution end by the optical fiber probe connector 318.

Here, the fiber optic probe 319 is connected to an actuator manipulator device including a first motion mechanism 203 and a second motion mechanism 204 through the fiber optic probe connector 318, and the fiber optic probe 319 is connected to either the first motion mechanism 203 or the second motion mechanism 204 through the fiber optic probe connector 318. It should be noted that a thread or a plug pin is disposed on the optical fiber probe connector 318, and a threaded hole matched with the thread or a plug hole matched with the plug pin is disposed on both the first motion mechanism 203 and the second motion mechanism 204, so as to achieve connection of the optical fiber probe connector 318 on the first motion mechanism 203 or the second motion mechanism 204.

As shown in fig. 9 or 10, the tungsten needle 207 is connected to the tungsten needle connector 206, the tungsten needle connector 206 is provided with a mounting hole, the tungsten needle 207 can be connected to the mounting hole by means of insertion or adhesion, and the tungsten needle 207 is connected to the operation device at the execution end by the tungsten needle connector 206.

Here, the tungsten needle 207 is connected to an actuator end effector including a first moving mechanism 203 and a second moving mechanism 204 through the tungsten needle connector 206, and the tungsten needle 207 is connected to either the first moving mechanism 203 or the second moving mechanism 204 through the tungsten needle connector 206. It should be noted that a thread or a plug pin is disposed on the tungsten needle connector 206, and a threaded hole matched with the thread or a plug hole matched with the plug pin is disposed on both the first motion mechanism 203 and the second motion mechanism 204, so as to connect the tungsten needle connector 206 to the first motion mechanism 203 or the second motion mechanism 204.

As shown in fig. 10, the AFM probe 205 is connected to an AFM probe connector 208, a slot is disposed on the AFM probe connector 208, the AFM probe 205 may be connected to the slot by means of insertion or adhesion, and the AFM probe 205 is connected to an execution end operating device by the AFM probe connector 208.

Here, the AFM probe 205 is connected to an actuator manipulator including a first motion mechanism 203 and a second motion mechanism 204 through the AFM probe connector 208, and the AFM probe 205 is connected to either the first motion mechanism 203 or the second motion mechanism 204 through the AFM probe connector 208. It should be noted that a thread or a pin is provided on the AFM probe connector 208, and a threaded hole matched with the thread or a plugging hole matched with the pin is provided on both the first motion mechanism 203 and the second motion mechanism 204, so as to connect the AFM probe connector 208 to the first motion mechanism 203 or the second motion mechanism 204.

EXAMPLE five

As shown in fig. 8, the embodiment of the present invention is different from the above-mentioned embodiment in that the executing end includes: a fiber collimator 321 and a tungsten needle 207; the optical fiber collimator 321 is connected to the optical fiber 304 and adapted to convert the laser beam into parallel light; the surface of the tungsten needle is plated with a gold layer, the tungsten needle 207 is positioned in the irradiation range of the laser beam, the needle point of the tungsten needle 207 is in a nanometer size, and the tungsten needle 207 is suitable for generating near-field light. Here, as shown in fig. 8, the tungsten needle 207 may be replaced with an AFM probe 205, and the tungsten needle 207 and the AFM probe 205 are the same and have a nano-scale tip. It should be noted that, since the AFM probe 205 or the tungsten needle 207 has a tip with a nano size, when laser light is irradiated, near-field light can be generated at the tip of the tip. After the laser beam is converted into parallel light by the optical fiber collimator 321, the field intensity of the near-field light is improved compared with that of the near-field light by using the optical fiber probe 319.

As shown in fig. 8 and 12, the optical fiber collimator 321 is connected to the collimator connector 320, a bayonet is disposed on the collimator connector 320, the optical fiber collimator 321 may be connected to the bayonet by means of insertion, clamping, or screw fastening, and the connection between the optical fiber collimator 321 and the actuator manipulator is achieved by the collimator connector 320. Here, the fiber collimator 321 is preferentially connected to the first moving mechanism 203 in consideration of the weight of the fiber collimator 321.

EXAMPLE six

As described in the above embodiments, the present embodiment is different therefrom in that, as shown in fig. 6 to 12, the nano-manipulation device includes: the device comprises a first motion mechanism 203, a second motion mechanism 204 and a control device 107, wherein the first motion mechanism 203 has a plurality of translational degrees of freedom and at least one rotational degree of freedom, the second motion mechanism 204 has a plurality of rotational degrees of freedom and at least one translational degree of freedom, actuating ends are mounted on the first motion mechanism 203 and the second motion mechanism 204, the first motion mechanism 203 and the second motion mechanism 204 are respectively connected with the control device 107, and the control device 107 is suitable for controlling the first motion mechanism 203 and the second motion mechanism 204 to drive the actuating ends to move for nano-operation.

As shown in fig. 12, the first motion mechanism 203 has four degrees of freedom, including 3 translational degrees of freedom and 1 rotational degree of freedom perpendicular to each other. The first moving mechanism 203 comprises a fixed block 216, a first sliding block 215, a second sliding block 214, a third sliding block 213 and a first rotating connecting piece 212, the first sliding block 215 is connected with the fixed block 216 in a sliding manner, and the first sliding block 215 moves left and right relative to the fixed block 216 under the driving of a driving device to realize first translation; the second sliding block 214 is connected with the first sliding block 215 in a sliding manner, and the second sliding block 214 moves back and forth relative to the first sliding block 215 under the driving of a driving device to realize second translation; the third sliding block 213 is connected with the second sliding block 214 in a sliding manner, and the third sliding block 213 moves up and down relative to the second sliding block 214 under the driving of the driving device, so as to realize third translation; the first rotating connecting member 212 is pivotally connected to the third sliding block 213, the cross section of the first rotating connecting member 212 is circular, and the first rotating connecting member is driven by the driving device to rotate around the center of a circle to realize a first rotation, and the actuating end is mounted on the first rotating connecting member 212, so that the actuating end is driven to rotate while the first rotating connecting member 212 rotates. It should be noted that the driving device for translational degree of freedom and first rotation is driven by a piezoelectric driver. In addition, the upper, lower, front, rear, left and right are relative to the orientation coordinate system in fig. 12, and are not equivalent to the front, rear, left and right orientation in the actual nano manipulation device, and are only for convenience of description here.

Alternatively, the first motion mechanism 203 may also adopt more translational degrees of freedom or rotational degrees of freedom, but three translational degrees of freedom can already realize three-dimensional spatial movement of the actuating end, and the problem of angular adjustment of the actuating end can also be solved through one rotation.

It should be noted that, a threaded hole or a socket is provided on the first rotary connector 212, which is suitable for the installation of the tungsten needle 207, the optical fiber collimator 321, the AFM probe 205, or the optical fiber probe 319, the AFM probe connector 208 is installed by providing a thread matching the threaded hole or a pin matching the socket on the AFM probe connector 208, or the collimator connector 320 is connected by providing a thread matching the threaded hole or a pin matching the socket on the collimator connector 320, or the tungsten needle connector 207 is connected by providing a thread matching the threaded hole or a pin matching the socket on the tungsten needle connector 207, or the optical fiber probe connector 318 is provided with a thread matching the threaded hole or a pin matching the socket, the fiber optic probe connector 318 is made to connect.

When the tungsten needle 207 or the AFM probe 205 is mounted on the first motion mechanism 203, the nanowire and the nanoparticle are pushed to a set position through the three-dimensional motion of the first motion mechanism 203; when the optical fiber collimator 321 is mounted on the first motion mechanism 203, the optical fiber collimator 321 is moved to a set near-field light generation position by the three-dimensional motion of the first motion mechanism 203.

As shown in fig. 11, the second motion mechanism 204 has 4 degrees of freedom, 3 of which are rotational degrees of freedom and 1 translational degree of freedom. The second motion mechanism 204 includes a fixed part 227, a first rotating part 211, a second rotating part 210, and a third rotating part 209, the first rotating part 211 is pivoted to the fixed part 227, and the first rotating part 211 rotates around the fixed part 227 under the driving of the driving device to realize a first rotation; the second rotating member 210 is pivotally connected to the first rotating member 211, and the second rotating member 210 rotates around the first rotating member 211 under the driving of the driving device, so as to realize a second rotation; the third rotating member 209 is pivoted with the second rotating member 210, the third rotating member 209 is of a cylindrical structure, and the third rotating member 209 rotates around the central axis thereof under the driving of the driving device, so as to realize third rotation; the tungsten needle connector 206 is connected with the third rotating member 209, the tungsten needle 207 is connected with the tungsten needle connector 206, and the tungsten needle connector 206 is driven by a driving device to drive the tungsten needle 207 to translate along the axial direction of the tungsten needle 207 to form a fourth translation. It should be noted that the first rotation, the second rotation, and the third rotation are all driven by a piezoelectric driver, and the fourth translation is driven by a piezoelectric driver.

It should be noted that a threaded hole or a jack is formed in the third rotating member 209, and is suitable for mounting the tungsten needle 207, the AFM probe 205, or the fiber probe 319, and the AFM probe connector 208 is mounted by providing a thread matched with the threaded hole or a plug matched with the jack on the AFM probe connector 208, or the tungsten needle connector 207 is connected by providing a thread matched with the threaded hole or a plug matched with the jack on the tungsten needle connector 207, or the fiber probe connector 318 is connected by providing a thread matched with the threaded hole or a plug matched with the jack on the fiber probe connector 318.

When the tungsten needle 207 or the AFM probe 205 is mounted on the second motion mechanism 204, the three-dimensional motion of the second motion mechanism 204 is realized through the first rotation, the second rotation, the third rotation and the fourth translation, and the nanowire or the nanoparticle is pushed to a set position.

Optionally, the executing end is a tungsten needle 207 or an AFM probe 205, and the control device 107 is adapted to control the first moving mechanism 203 and the second moving mechanism 204 to respectively drive the tungsten needle 207 or the AFM probe 205 to move to form a micro-tweezers to clamp the nano-structure. The advantage of this arrangement is that the tungsten needle 207 or the AFM probe 205 is mounted on the first motion mechanism 203 and the second motion mechanism 204, respectively, and since the tips of the tungsten needle 207 or the AFM probe 205 are all in the nanometer scale, micro-tweezers are formed, and when the first motion mechanism 203 and the second motion mechanism 204 are used in cooperation, the nano-wires or nano-particles are clamped; the flexibility of the micro-tweezers is increased by the movement of the first movement mechanism 203 and the second movement mechanism 204, respectively.

Optionally, there are two sets of the second motion mechanisms 204. It should be noted that two sets of the second motion mechanisms 204 and one set of the first motion mechanisms 203 may be used in cooperation with each other. When the two sets of second motion mechanisms 204 are used in a matched manner, the tungsten needle 207 or the AFM probe 205 is simultaneously installed on the two sets of second motion mechanisms 204, and because the tips of the tungsten needle 207 or the AFM probe 205 are both in a nanometer scale, micro-tweezers are formed, so that the nano-wires or nano-particles can be clamped, and the third rotation is adjusted at the same time, so that the rotational degrees of freedom of the two sets of second motion mechanisms 204 are rotated oppositely to a certain degree, thereby increasing the clamping stability.

Optionally, as shown in fig. 7, 9 and 10, the nano operation device further includes: the mounting frame comprises a connecting block 230, a connecting rod 229 and a mounting block 228, the connecting block 230 and the mounting block 228 are fixedly connected through the connecting rod 229, a plurality of mounting positions are arranged on the mounting block 228, and one or more first motion mechanisms 203 and one or more second motion mechanisms 204 can be mounted at the same time. Here, the mounting frames are two or more, provided that no interference occurs.

EXAMPLE seven

As the above-described embodiment, the present embodiment is different therefrom in that, as shown in fig. 7, 13, and 14, the nano operation device further includes: a coarse positioning sample stage 201 fixedly connected with a fine positioning sample stage 202; the coarse positioning sample stage 201 has a plurality of translational degrees of freedom and at least two rotational degrees of freedom, and the coarse positioning sample stage 201 is adapted to drive the fine positioning sample stage 202 to move.

Preferably, the coarse positioning sample stage 201 has two rotational degrees of freedom and three mutually perpendicular translational degrees of freedom, one of the rotational degrees of freedom of the coarse positioning sample stage 201 is suitable for driving the fine positioning sample stage 202 to rotate, and the other rotational degree of freedom of the coarse positioning sample stage 201 is suitable for tilting the fine positioning sample stage 202. As shown in fig. 13 and 14, the rough positioning sample stage 201 includes a base 217, a fifth translation member 218, a sixth translation member 219, a seventh translation member 220, a fourth rotation member 222, and a fifth rotation member 221, where the fifth translation member 218 is connected to the base 217 in a sliding manner, the fifth translation member 218 moves back and forth relative to the base 217 under the driving of a driving device to form a fifth translation, and a maximum movement distance of the fifth translation is 125 mm; the sixth translation piece 219 moves left and right relative to the fifth translation piece 218 under the driving of the driving device to form a sixth translation, and the maximum movement distance of the sixth translation is 125 mm; the seventh translation member 220 is driven by the driving device to move up and down relative to the sixth translation member 219 to form a seventh translation, and the maximum movement distance of the seventh translation member is 50 mm; the fourth rotating member 222 rotates to incline the fifth rotating member 221, so that a fourth rotation is formed, the fourth rotation is located in the upper, lower, front and rear planes, and the maximum rotation angle of the fourth rotation is 90 degrees; the fifth rotation member 221 has a cylindrical structure, and the fifth rotation member 221 rotates around its central axis to form a fifth rotation. It should be noted that the fifth translation, the sixth translation, and the seventh translation are driven by motors, the motion resolution is 100nm, and the fourth rotation and the fifth rotation are both driven by motors, and the motion resolution is 100 nm. Here, the upper, lower, front, rear, left, and right are relative to the orientation coordinate system in fig. 14, and are not equivalent to the front, rear, left, and right orientations in the actual nano manipulation device, and are only for convenience of description here.

As shown in fig. 13 and 14, a fifth sliding groove is formed in the base 217, the fifth translation member 218 is connected to the base 217 through the fifth sliding groove, and the fifth translation member 218 translates along the fifth sliding groove under the driving of the driving device; a sixth sliding chute is formed in the fifth translation member 218, the sixth translation member 219 is connected with the fifth translation member 218 through the sixth sliding chute, and the sixth translation member 219 translates along the sixth sliding chute under the driving of a driving device; the sixth sliding part 219 is provided with a seventh sliding groove, the seventh sliding part 220 is connected with the sixth sliding part 219 through the seventh sliding groove, and the seventh sliding part 220 translates along the seventh sliding groove under the driving of the driving device.

The arrangement has the advantages that the movement of a three-dimensional space can be realized through 3 translation degrees of freedom, and the sample is moved to a set position for primary positioning; the fine positioning sample stage 202 is connected with the fifth rotating member 221, and the fine positioning sample stage 202 is inclined by the rotation of the fourth rotating member 222, so that convenience is provided for finding the optimal electron beam imaging; rotating the fine positioning sample stage 202 by the rotation of the fifth rotating member 221, so as to find an optimal nanostructure operation angle; the fine positioning sample stage 202 is adjusted primarily to be located at the optimal operation position, so that the moving distance of fine positioning can be indirectly reduced, and the equipment cost is saved.

Optionally, as shown in fig. 7, 13, and 14, the nano operation device further includes a fine positioning sample stage 202, where the fine positioning sample stage 202 has three translational degrees of freedom perpendicular to each other, and the fine positioning sample stage 202 is adapted to place the nano structure and move the nano structure.

As shown in fig. 15, the fine positioning sample stage 202 has 3 translational degrees of freedom perpendicular to each other, a connecting seat 223, an eighth translational member 224, a ninth translational member 225 and a tenth translational member 226, the connecting seat 223 is fixedly connected with the fifth rotational member 221, and the eighth translational member 224 moves back and forth relative to the connecting seat 223 under the driving of a driving device to form an eighth translational motion; the ninth translation part 225 is driven by the driving device to move left and right relative to the eighth translation part 224 to form a ninth translation; the tenth translation member 226 is driven by the driving device to move up and down relative to the ninth translation member 225, so as to form a tenth translation. It should be noted that the eighth translation, the ninth translation, and the tenth translation are driven by a motor or hydraulic pressure, and the motion resolution is 0.5 nm. Here, the upper, lower, front, rear, left, and right are relative to the orientation coordinate system in fig. 15, and are not equivalent to the front, rear, left, and right orientations in the actual nano manipulation device, and are only for convenience of description here.

The advantage of this arrangement is that the sample is moved to the set position by the coarse positioning sample stage 201, and the preliminary positioning is performed; the sample is then positioned by fine positioning the sample stage. In addition, the main function of the precise positioning sample stage is to change the direction of movement to increase the degree of freedom of the execution end operation device through the three-dimensional movement of the precise positioning sample stage 202, and through the cooperation of the precise positioning sample stage 202 and the execution end operation device, the movement after the nano particles and the nano wires are pushed, pulled, clamped or clamped can be performed, so that the connection between the nano particles and the nano wires is facilitated, and the flexibility of nano operation is increased through phase change.

Example eight

As shown in fig. 16, the embodiment is different from the above-mentioned embodiment in that the nano-connecting device further includes an electron beam emission and regulation module 102 connected to the vacuum chamber 101, the electron beam emission and regulation module 102 is further connected to the control device, the electron beam emission and regulation module 102 is controlled by the control device, the electron beam emission and regulation module 102 is adapted to generate an electron beam and accelerate, deflect and focus the electron beam, and irradiate the sample through an electron beam objective lens 103, so that the sample excites secondary electrons and backscattered electrons, thereby realizing real-time visual observation of the sample and monitoring of micro-nano pattern processing of the sample. The nanometer connecting device further comprises a photoelectric detector module 104, the photoelectric detector module 104 is arranged on the side wall of the vacuum cavity 101, the photoelectric detector module 104 is connected with the control device, the photoelectric detector module 104 is suitable for collecting secondary electrons, back-scattered electrons and the like, real-time visual observation of sample operation and connection processes is achieved, chemical compositions and lattice structures of samples can be analyzed by adjusting the photoelectric detector module 104, and photoluminescence spectrums and cathodofluorescence spectrums can be tested by adjusting the photoelectric detector module 104. The nano connecting device further comprises an electron beam objective lens 103, wherein the electron beam objective lens 103 is arranged inside the vacuum chamber 101 and connected with the electron beam emission and regulation module 102, and the electron beam objective lens 103 is suitable for zooming the imaging multiple of the sample.

The nanometer connecting device further comprises a protective gas introducing device 105, the protective gas introducing device 105 is connected with the vacuum cavity 101 through a pipeline and is suitable for introducing protective gas into the vacuum cavity 101, the protective gas introducing device 105 is further connected with the control device, and the control of the protective gas introducing device 105 is achieved through the control device. When the vacuum chamber 101 is opened, the shielding gas can prevent the sample from being oxidized and reduce contamination of the inside of the vacuum chamber 101 by the external air. Inert gases such as nitrogen can be used as the protective gas.

The nano connecting device further comprises a CCD camera 106, the CCD camera 106 is installed in the vacuum cavity 101 and connected with the control device, the control device is suitable for acquiring images detected by the CCD camera 106 and adjusting the CCD camera 106, and before imaging by using electron beams, the CCD camera 106 is used for observing relative positions of a detection probe module, a sample table platform and the like so as to control the sample table and a probe movement module to adjust the positions.

Example nine

A near-infrared photoelectric device, as shown in fig. 17 and 18, includes a silicon substrate 6, nano optical antennas 5, electrodes, and nanowires 4, where the electrodes include a first electrode 3 and a second electrode 7, where a plurality of the nano optical antennas 5 and the electrodes are all disposed on the surface of the silicon substrate 6, the plurality of the nano optical antennas 5 are located between the first electrode 3 and the second electrode 7, two ends of the nanowires 4 are respectively connected to the first electrode 3 and the second electrode 7, and the nanowires 4 are in contact with at least one of the nano optical antennas.

It should be noted that, the near infrared optoelectronic device is used for sensing near infrared bands, as shown in fig. 17 and 18, the structure of the nano optical antenna 5 includes: the disc-shaped magnetic recording head comprises a large disc 1 and a plurality of small discs 2, wherein the small discs 2 are arranged along the edge of the large disc 1 in an array mode, a gap between each small disc 2 and the large disc 1 is d, the diameter of the large disc 1 is 140nm-160nm and preferably 150nm, the diameter of the peripheral small disc 2 is 80nm-120nm and preferably 100nm, and the gap d between each large disc 1 and the corresponding small disc 2 is 10nm-20nm and preferably 15 nm. Through measurement, when the gap d is 15mm, the effect of the near infrared photoelectric device responding to the near infrared wave band is optimal. The first electrode 3 and the second electrode 7 are respectively arranged on two sides of the nano optical antenna area, the first electrode 3 serves as a source electrode of the near-infrared photoelectric device, the second electrode 7 serves as a drain electrode of the near-infrared photoelectric device, and the silicon substrate serves as a grid electrode of the near-infrared photoelectric device. Typically, a plurality of nano-optical antennas 5 are arranged in an array between the first electrode 3 and the second electrode 7. The invention mainly utilizes the gap between the large disk 1 and the small disk 2 in the same nanometer optical antenna 5 to excite plasmon polariton when in illumination, can capture and enhance incident light, broaden the response wavelength range of the device, improve the carrier concentration in the nanometer wire and further improve the optical and electrical properties of the device.

The electrode and the nano optical antenna are preferably made of gold, silver and the like, the nanowire 4 is preferably made of silicon nanowires, the nanowire 4 and the electrode are welded by adopting nanoparticles, and the nanoparticles are preferably made of gold, silver and copper nanoparticles. The near-infrared photoelectric device can respond to a near-infrared wave band of 750nm-1000nm, and has the advantages of large photocurrent, high response rate and short response time.

Example ten

A method for processing a near-infrared photoelectric device, as shown in fig. 20, includes:

s1: a substrate provided with a calibration pattern is acquired.

S2: preparing a photoelectric device substrate by using the substrate with the calibration pattern, comprising:

s21: and preparing an electron beam glue layer on the side of the substrate with the calibration pattern. Here, a polymethylmethacrylate (PMMA C2) electron beam resist is uniformly spin-coated on the substrate provided with the alignment pattern using a spin coater having a spin speed of 4000 rpm and a spin time of 45 seconds to 75 seconds, and preferably 1 minute.

S22: and heating the electron beam adhesive layer to solidify the electron beam adhesive layer. Here, the electron beam paste layer is baked at a baking temperature of 150 to 200 ℃ and preferably 180 ℃ for 12 to 18 minutes and preferably 15 minutes.

S23: and exposing the electron beam glue layer, wherein the exposure area covers the calibration pattern. Here, it is necessary to design an exposure region first, and a square region of the calibration pattern can be completely covered by a nano-patterning generation system design using an electron beam detection and processing system; wherein, the electron beam lithography parameters are set as follows: the accelerating voltage is 30kV, the magnification is 1200 times, and the electron beam current is 68 pA.

S24: and developing, removing the electron beam glue layer of the exposure area to obtain the photoelectric device substrate. Here, the substrate coated with the alignment pattern is entirely placed in a developing solution in which methyl isobutyl ketone (MIBK): the mass ratio of isophthalic acid (IPA) is 1:3, and the developing time is 90 seconds; and washing the developing area by using deionized water for 15s, and finally blowing the developing area by using a nitrogen gun for 1min to obtain the substrate with the calibration pattern. The developer adopted here is prepared by the inventor, and after repeated experiments and verifications, the developer adopts a mixed solution of methyl isobutyl ketone (MIBK) and isophthalic acid (IPA), which can effectively remove the electron beam glue layer, and the ratio of methyl isobutyl ketone (MIBK): when the mass ratio of the isophthalic acid (IPA) to the isophthalic acid (IPA) is 1:3, the removal time can be shortest and the removal effect is better.

S3: and (3) electron beam calibration, namely, placing the photoelectric device substrate below an electron beam objective lens, and adjusting parameters of the electron beam emission and regulation module 102 until clear imaging of the calibration pattern is obtained. The photoelectric device substrate is provided with a calibration pattern, the calibration pattern is used for calibrating the electron beam, the calibration accuracy is improved, and the photoelectric device structure is directly processed on the photoelectric device substrate subsequently.

S4: fabricating an optoelectronic device structure comprising:

s41: keeping the parameters of the electron beam emission and regulation module 102 unchanged, and performing the engraving of the structural pattern of the photoelectric device on the electron beam adhesive layer outside the exposure area in an electron beam exposure mode. Wherein, the electron beam lithography parameters are set as follows: the electron beam acceleration voltage was 30kV, the magnification was 1200 times, and the electron beam current was 68 pA. Here, as shown in fig. 18, here, the optoelectronic device structure pattern includes two electrode patterns and a nano-optical antenna pattern located between the two electrode patterns, and the nano-optical antenna pattern and the electrode pattern are simultaneously engraved, thereby avoiding unnecessary troubles caused by engraving multiple times.

S42: and developing to remove the electron beam adhesive layer in the structural pattern area of the photoelectric device. Here, the substrate having the photoelectric device engraved thereon is entirely placed in a developing solution in which methyl isobutyl ketone (MIBK): the mass ratio of isophthalic acid (IPA) is 1:3, and the developing time is 90 seconds; and washing the developing area by using deionized water for 15s, and finally blowing the developing area by using a nitrogen gun for 1 min.

S43: and evaporating a gold layer on the pattern area of the photoelectric device structure. And (3) carrying out evaporation plating on the gold material in the developing area by adopting high-temperature vacuum thermal evaporation equipment, wherein the evaporation plating voltage of the gold material is 2.1V, the evaporation plating speed is 1.2nm/s, and the thickness is 30 nm.

S44: and removing all the electron beam glue layers to finish the preparation of the photoelectric device structure. Here, the electron beam alignment gel layer was completely placed in an acetone solution and soaked at a temperature of 75 ℃ for about 2 hours. Here, the optoelectronic device structure includes two electrodes and a nano-optical antenna positioned between the two electrodes.

The advantage of such an arrangement is that the photoelectric device structure is prepared after the electron beam emission and regulation module 102 is calibrated by the calibration pattern, the shape of the disc of the nano optical antenna structure is complete, the edges of the nano disc are neat and have no other residual impurities, the size of the gaps between different nano discs is uniform, and the gaps reach 15 nm. In addition, the exposure time of the electron beam is shortened after the parameter calibration, and compared with the traditional exposure time, the exposure time is greatly shortened.

S5: and connecting the nanowire with the electrode by using the nanoparticle as a flux, and contacting the nanowire with the nano-optical antenna. Here, two ends of the nanowire are respectively connected with the two electrodes, the nanowire is in contact with the nano optical antenna, the two electrodes are respectively used as a source electrode and a drain electrode of the near-infrared photoelectric device, and the silicon substrate is used as a grid electrode of the near-infrared photoelectric device.

Optionally, the nano-optical antenna pattern is a nano-optical antenna array pattern, and the nano-optical antenna array pattern includes a plurality of nano-optical antenna patterns.

The advantage of this arrangement is that the calibrated electron beam emission and regulation module 102 can be used to manufacture a plurality of nano antenna structures simultaneously, so as to shorten the exposure time, and actually measure the electron beam exposure time of 315 nano optical antenna patterns to be only 1.7 seconds.

Optionally, the acquiring a substrate provided with a calibration pattern comprises:

s11: and coating an electron beam calibration glue layer on the surface of the substrate. Here, a polymethylmethacrylate (PMMA C2) electron beam resist was uniformly spin-coated on a silicon wafer using a spin coater having a spin speed of 4000 rpm and a spin coating time of 45 seconds to 75 seconds, and preferably 1 minute.

S12: and heating the electron beam calibration adhesive layer to cure the electron beam calibration adhesive layer. Here, the electron beam alignment paste layer is baked at a baking temperature of 150 to 200 ℃ and preferably 180 ℃ for 12 to 18 minutes and preferably 15 minutes.

S13: the design of the calibration pattern is performed. The calibration pattern is designed by utilizing a nano patterning generation system of the industrial personal computer, and in order to improve the calibration precision, the calibration pattern adopts one or a plurality of nano optical antenna structures.

S14: and preliminarily adjusting and adjusting the parameters of the electron beam emission and regulation module 102, and controlling the electron beam emission and regulation module 102 to carve the calibration pattern on the electron beam calibration glue layer in an electron beam exposure mode. Wherein, the electron beam lithography parameters are set as follows: the accelerating voltage is 30kV, the magnification is 1200 times, and the electron beam current is 68 pA.

S15: and developing, and removing the electron beam quasi-adhesive layer in the exposure area. Here, the silicon wafer coated with the electron beam quasi-adhesive layer is placed in a developing solution in which methyl isobutyl ketone (MIBK): the mass ratio of isophthalic acid (IPA) is 1:3, and the developing time is 90 seconds; and flushing the development area with deionized water for 15s, and finally blowing the development area with a nitrogen gun for 1min to obtain the calibration pattern.

S16: and evaporating a gold layer in the area of the calibration pattern. And a high-temperature vacuum thermal evaporation device is adopted for gold material evaporation, a titanium material is adopted as a bonding layer, and the bonding layer is suitable for connecting the gold material and the silicon wafer. The evaporation experiment conditions are as follows: the evaporation voltage of the titanium material is 3V, the evaporation speed is 1.2nm/s, and the thickness of the titanium material is 2 nm; the vapor deposition voltage of the gold material is 2.1V, the vapor deposition speed is 1.2nm/s, and the thickness of the gold material is 30 nm. Because the price of gold is high, the titanium material is adopted as the bonding layer, so that the adhesion effect of gold is improved, and on the other hand, the titanium material is adopted as the bonding layer, so that the titanium material has a certain thickness, and the using amount of gold materials can be reduced.

S17: and removing all the electron beam calibration glue layers to obtain the substrate with the calibration pattern. Here, the electron beam alignment gel layer was completely placed in an acetone solution and soaked at a temperature of 75 ℃ for about 2 hours. It should be noted that, only the substrate with the calibration pattern is prepared here, and the substrate with the calibration pattern already meets the structure of the optical antenna, but the accuracy of the substrate cannot meet the requirement of the high-precision nano antenna, and here, the substrate is only used as the calibration pattern to calibrate the electron beam emission and regulation module 102, and adjust various parameters such as aberration of the electron beam under the magnification of 120k times, so as to ensure that the details of the edge of the nano optical antenna structure are observed clearly.

The specific operation in the step S3 is to fix the photoelectric device substrate on a fine positioning sample stage 202; closing the vacuum cavity 101 and vacuumizing the vacuum cavity 101; observing the environment in the vacuum cavity 101 through the CCD camera 106, adjusting the rough positioning sample stage 201, and moving the photoelectric device substrate to a set position; the imaging function of the electron beam emission and regulation module 102 is started, and the fine positioning sample stage 202 and the electron beam emission and regulation module 102 are regulated, so that the photoelectric device substrate presents clear imaging on the display device 108, and the calibration of the electron beam emission and regulation module 102 is completed. The advantage of this arrangement is that the vacuum chamber 101 is vacuumized during calibration, so that the electron beam is in a vacuum working environment, thereby improving the precision of the electron beam; here, in order to increase the space margin of the fine positioning sample stage 202, the coarse positioning sample stage is moved to adjust the optoelectronic device substrate to a set position, which is the position where the optoelectronic device substrate is located right below the electron beam objective lens 103, and then fine adjustment is performed by the fine positioning sample stage 202. The parameters of the electron beam emission and regulation module 102 are that the electron beam acceleration voltage is 30kV, the magnification factor is 1200 times, and the electron beam current is 68 pA.

In the step S41, after the photoelectric device structure pattern is completely depicted, the electron beam emission and regulation module 102 is closed, the vacuum chamber 101 is unloaded and vacuumized, and meanwhile, the shielding gas introducing device 105 is opened, shielding gas is introduced into the vacuum chamber 101, and then the hatch door is opened, and the sample is taken out. This has the advantage that the shielding gas prevents the sample from being oxidized and reduces contamination of the interior of the vacuum chamber 101 by the outside air when the vacuum chamber 101 is opened.

It should be noted that this embodiment is only a preferred embodiment of completing the fabrication of the near-infrared optoelectronic device by using the nano-connection device, and the nano-connection device may also complete the fabrication of the near-infrared optoelectronic device by other manners. Thus, the present embodiment does not constitute a limitation on the nano-connection means.

Of course, the method can also be used for independently processing the nano antenna or the nano electrode, only the photoelectric device structure pattern needs to be replaced by the nano antenna or the nano electrode pattern, and the processed nano electrode has the same beneficial effect as the processed photoelectric device structure.

EXAMPLE eleven

A nanowire handling and connection method, as shown in fig. 21, comprising:

s1: obtaining a substrate with nano particle clusters and nano wires dispersed on the surface of a silicon wafer; it should be noted that the nanoparticle cluster includes a plurality of nanoparticles, and the dispersion of the nanoparticles is performed with the nanoparticle cluster theme without individually moving the individual nanoparticles.

S2: fixing the substrate on a fine positioning sample stage 202, adjusting an electron beam objective lens 103 and an electron beam emission and regulation module 102, and moving the sample stage to position the substrate;

s3: adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102, and moving the sample stage to position the target nanowire;

s4, adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102, and driving an execution end to move the target nanowire by using an execution end operating device;

s5: adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102, and positioning a target nanoparticle cluster by using a nano operation device;

s6, adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102, moving an execution end operating device to drive an execution end to move the target nanoparticle clusters, repeating S5-S6 in turn, and moving a plurality of target nanoparticle clusters to different connection positions of the nanowires;

s7: and starting the near-field light generating device, adopting the near-field light as a heat source, and adopting the target nano-particle cluster as a welding flux to connect different target nano-wires.

It should be noted that the substrate for obtaining the nanoparticles and nanowires uniformly distributed on the surface of the silicon wafer in S1 includes: s11: and cleaning the silicon wafer. Placing the silicon wafer into a glass bottle filled with deionized water, and then placing the glass bottle into an ultrasonic cleaning machine for ultrasonic cleaning, wherein the ultrasonic cleaning time is 10-20 minutes, and preferably 15 minutes; taking out the silicon wafer, then placing the silicon wafer in a glass bottle filled with acetone solution, and carrying out secondary ultrasonic cleaning, wherein the secondary ultrasonic cleaning time is 12-18 minutes, and preferably 15 minutes. And taking out the cleaned silicon wafer, blowing the surface of the silicon wafer by using a nitrogen gas gun to obtain the silicon wafer without fine impurities attached to the surface, and repeating the steps to clean again if obvious stains exist on the surface. The benefit of sequentially cleaning the wafers with deionized water and acetone solution, respectively, here is the removal of fine contaminants and particulate impurities.

S12: nanoparticle clusters and dispersion of nanowires. Firstly, preparing a nano solution, weighing a proper amount of nano particles and nano wires by adopting a precision electronic balance, mixing alcohol and the weighed nano particles and nano wires in a plastic ware, and placing the plastic ware in an ultrasonic cleaning machine for ultrasonic treatment for 15 minutes to obtain a mixed solution; the mixed solution was placed in a glass bottle and sonicated again for 15 minutes. It should be noted that, in the ultrasonic treatment process, the aqueous solution in the ultrasonic cleaning machine needs to be continuously replaced, and the water temperature in the ultrasonic treatment process is ensured to be below 30 ℃. And then, carrying out spin coating on the nano particle clusters and the nano wires, sucking the nano solution by using a liquid transfer machine, dripping a little of the solution onto the silicon wafer cleaned in the step S11, placing the silicon wafer on a spin coater, setting different rotating speeds to uniformly spin-coat the solution dripped with the nano particle clusters and the nano wires on the silicon wafer, and finally preparing the nano wires and the substrate of the nano particle clusters which are uniformly dispersed. Here, the nano particle cluster adopts silver nano particles, the nano wire adopts carbon nano tubes, and the nano wire and the nano particles respectively take 0.1-0.3mg and 100ml of alcohol solution. It should be noted that the nanoparticle cluster may also adopt silver nanoparticles and copper nanoparticles, and the nanowire may also adopt zinc oxide nanowires and silicon nanowires, wherein the diameter of the nanoparticles is less than 20nm, and the diameter of the nanowires is greater than 100 nm.

Here, the ultrasonic treatment is performed in both the S11 step and the S12 step, the ultrasonic treatment in the S11 step is intended to clean the silicon wafer, and the ultrasonic treatment in the S12 step is intended to excite the nano solution by ultrasonic waves, so that the nano solution and the nano solution are uniformly mixed. The plastic ware is firstly adopted for operation, so that the plastic surface is rough, the friction force is large, and the ultrasonic treatment time can be shortened.

Between the step of S1 and the step of S2, the method further comprises the following steps: fixing the substrate on a fine positioning sample table 202, and performing vacuum pumping treatment on a vacuum cavity 101; the vacuum chamber 101 is closed and a vacuum is drawn on the vacuum chamber 101. The advantage of this arrangement is that the vacuum chamber 101 is vacuumized during calibration, so that the electron beam is in a vacuum working environment, thereby improving the imaging accuracy of the electron beam.

In the step S2, the step of positioning the substrate by using the rough positioning sample stage 201 and the fine positioning sample stage 202 includes: observing the environment in the vacuum cavity 101 through the CCD camera 106, adjusting the rough positioning sample stage 201, and moving the base to a set position; and starting the imaging function of the electron beam emission and regulation module 102, and regulating the fine positioning sample stage 202, the electron beam objective lens 103 and the electron beam emission and regulation module 102, so that the nano wires and nano particle clusters on the substrate can be clearly imaged on the display device 108. Here, in order to increase the space margin of the fine positioning sample stage 202, the coarse positioning sample stage is moved to adjust the nano-optical antenna base to a set position, which is located right below the electron beam objective lens 103, and then fine adjustment is performed by the fine positioning sample stage 202. In the actual operation process, firstly, the coarse positioning sample stage 201 is adjusted to enable the upper surface of the base to be 10-15mm away from the position right below the electron beam objective lens 103; starting the imaging function of the electron beam emission and regulation module 102, setting the electron beam acceleration voltage in the electron beam emission and regulation module 102 to be 5-10KeV, and adjusting the magnification factor of the electron beam objective lens 103 to be between 2000 and 5000 times, so that the nano wires and the nano particle clusters on the substrate can be clearly imaged on the display device 108.

The step of locating the target nanowire by using the nano manipulation device in the step of S3 includes: adjusting the rotational degree of freedom of the coarse positioning sample stage 201 to enable the fine positioning sample stage 202 to incline at an inclination angle alpha, wherein the angle alpha is 5-10 degrees in actual operation; adjusting the fine positioning sample stage 202, and selecting a target nanowire to be positioned in the center of an imaging view; the electron beam objective lens 103 and the electron beam emission and regulation module 102 are adjusted to enable the target nanowire to present a clear image on the display device 108. Here, the adjusting of the electron beam objective lens 103 is to increase the magnification of the electron beam objective lens 103 between 5000-. The arrangement has the advantage that the coarse positioning sample stage is enabled to be inclined at a proper angle through a special rotational degree of freedom, so that the AFM probe is in a better operation angle, and the subsequent movement of the target nanowire and the target nanoparticle cluster is facilitated.

The moving the target nanowire by using the execution-end manipulation device in S4 includes: adjusting the electron beam objective lens 103 to reduce the magnification of the electron beam objective lens 103, wherein the magnification of the electron beam objective lens 103 is between 2000-5000 times; here, the second motion mechanism is provided with an AFM probe, the second motion mechanism 204 is controlled to enable the AFM probe to continuously approach a target nanowire, the electron beam objective 103 and the electron beam emission and regulation module 102 are adjusted until the tip of the AFM probe and the target nanowire are clearly imaged on the display device 108, and here, the minimum distance between the tip of the AFM probe and the target nanowire is 10nm, and the action position between the tip of the AFM probe and the target nanowire is captured; controlling a second motion mechanism to enable the needle tip of the AFM probe to move to the action position of the target nanowire and push the target nanowire to the position to be connected; and repeating the above steps in sequence, and butting the head and the tail of different target nanowires, as shown in fig. 19.

The step of positioning the target nanoparticle cluster using the nano manipulation device in the step of S5 includes: adjusting the fine positioning sample stage 202; selecting a target nanoparticle cluster to be located in the center of an imaging view; and adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102 to enable the target nanoparticle cluster to present clear imaging on the display device 108. Here, the adjusting of the electron beam objective lens 103 is to increase the magnification of the electron beam objective lens 103 between 5000-.

The step of moving the target nanoparticle cluster by using the execution end operation device in the step of S6; the method comprises the following steps: adjusting the electron beam objective lens 103 to reduce the magnification of the electron beam objective lens 103, wherein the magnification of the electron beam objective lens 103 is between 2000-5000 times; controlling a second motion mechanism to enable an AFM probe to continuously approach a target nanoparticle cluster, and adjusting the electron beam emission and regulation module 102 until the tip of the AFM probe and the target nanoparticle cluster are clearly imaged on a display device 108, wherein the minimum distance between the tip of the AFM probe and the target nanoparticle cluster is 10nm, and the action positions of the tip of the AFM probe and the target nanoparticle cluster are captured; controlling a second motion mechanism to enable the needle tip of the AFM probe to move to the action position and push the target nano particle cluster to the butt joint position of the target nano wire; the above steps are sequentially repeated, so that a plurality of target nano particle clusters wrap the butt joints of the adjacent target nano wires, as shown in fig. 19.

Here, the substrate is positioned, then the target nanowire or the target nanoparticle cluster is positioned, and the target nanowire or the target nanoparticle cluster is positioned on the basis of the positioning of the substrate, so that the focusing difficulty caused by directly positioning the target nanowire or the target nanoparticle cluster is avoided, and the focusing efficiency is improved.

In the step S7, the step of connecting different target nanowires by using near-field light as a heat source and the target nanoparticle cluster as a flux includes:

and controlling a second motion mechanism to enable the tip of the AFM probe to be positioned at the butt joint of the target nanowires, wherein the tip of the AFM probe is positioned on all target nanoparticle clusters, and the minimum distance between the tip of the AFM probe and the target nanoparticle clusters is 1-5 nm.

And starting a laser emitting device, adjusting laser parameters such as laser power, wavelength and the like, wherein the laser power is set to be 10-65mW, the laser wavelength is set to be 808nm, and controlling a first movement mechanism to adjust the angle and the position of the optical fiber probe, so that laser is emitted from the optical fiber probe to a target nanoparticle cluster at the butt joint of the target nanowire, and the tip of the AFM probe is positioned in the laser irradiation range. At the moment, near-field light can be generated between the tip of the AFM probe and the target nano-particle cluster, the target nano-particle cluster can be melted by controlling the action time of the near-field light for 1-5min, and then the two target nanowires are connected. Here, the target nanoparticle clusters serve as a connection medium, and connection between different target nanowires is achieved by melting of the nanoparticle clusters. The AFM probe is driven to different spatial positions by moving a second motion mechanism, so that the movement of the nano wire and the nano particle cluster is realized, and the generation of near-field light is realized in an auxiliary manner.

The embodiment has the advantages that the nanowire and the nanoparticle cluster are uniformly dispersed on the surface of the silicon wafer after being mixed according to a certain proportion, so that the phenomenon of over-concentration or over-dispersion caused by directly coating the nanowire and the nanoparticle cluster is avoided, and the nanowire operation and connection efficiency is improved; through the matching of the coarse positioning platform and the fine positioning platform, the nano particle clusters and the nano wires can be captured more efficiently, and the operation efficiency of the nano wires is improved; the coarse positioning platform is matched with the second motion mechanism, so that the AFM probe is more convenient to operate, and the nanowire operation efficiency is improved; by converting far-field light into near-field light and utilizing the near-field light to connect nano particle clusters, the damage of nano wires and nano particles caused by overlarge action area of laser is avoided, and the connection quality of the nano wires is improved.

After the interconnection among the different nanowires is completed by using the nanoparticles, the electron beam emission and regulation module 102 is closed, the vacuum chamber 101 is subjected to unloading vacuum, the shielding gas introducing device 105 is opened at the same time, the shielding gas is introduced into the vacuum chamber 101, and then the hatch door is opened, and the sample is taken out. This has the advantage that the protective gas prevents the nanowires and nanoparticles from being oxidized and reduces contamination of the inside of the vacuum chamber 101 by the outside air when the vacuum chamber 101 is opened.

It should be noted that the present embodiment is only a preferred embodiment of using the nano-connection device to perform operations and connections of different nanowires, and the nano-connection device can also perform connections of different nanowires through other manners. Thus, the present embodiment does not constitute a limitation on the nano-connection means.

EXAMPLE eleven

A method for connecting a nanowire to an electrode, as shown in fig. 22, comprising:

s1: obtaining a silicon substrate with nano-particle clusters and nano-wires dispersed on the surface of a silicon wafer, obtaining an electrode substrate with a nano-electrode carved thereon, and fixing the silicon substrate and the electrode substrate on a fine positioning sample stage 202 at the same time;

s2, adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102, and moving the sample stage to position the silicon substrate;

s3: adjusting an electron beam objective lens 103 and an electron beam emission and regulation module 102, and moving a sample stage to position the target nanowire;

s4: adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102, and driving an execution end to clamp the target nanowire by using an execution end operating device;

s5: moving a sample stage to drive the electrode substrate to move, so that two target electrodes are respectively positioned under two ends of the target nanowire, and moving a nano operating device to place the target nanowire on an electrode structure;

s6: adjusting an electron beam objective lens 103 and an electron beam emission and regulation module 102, moving a sample stage to drive the silicon substrate to move, and positioning a target nanoparticle cluster;

s7: adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102, and driving an execution end to clamp the target nanoparticle cluster by using an execution end operating device;

s8: moving the nanometer operation device to drive the electrode substrate to move, so that the electrode substrate is positioned under the target nanometer particle cluster, moving the nanometer operation device to move the target nanometer particle cluster to the joint of the target nanometer wire and the electrode, and repeating the steps S5-S7;

s9: and starting the near-field light generating device, adopting the near-field light as a heat source, and adopting the nano-particle cluster as a welding flux to connect the nano-wire and the electrode.

It should be noted that the step of obtaining the electrode substrate with the patterned nano-electrodes in the step S1 includes:

s11: and coating an electron beam adhesive layer on the surface of the silicon wafer. Here, a polymethylmethacrylate (PMMA C2) electron beam resist was uniformly spin-coated on a silicon wafer using a spin coater having a spin speed of 4000 rpm and a spin coating time of 45 seconds to 75 seconds, and preferably 1 minute.

S12: and heating the electron beam correction layer to solidify the electron beam adhesive layer. Here, the electron beam paste layer is baked at a baking temperature of 150 to 200 ℃ and preferably 180 ℃ for 12 to 18 minutes and preferably 15 minutes.

S13: and designing a nano electrode pattern. And designing an electrode structure by using a nano patterning generation system of an industrial personal computer.

S14: and preliminarily adjusting and adjusting the parameters of the electron beam emission and regulation module 102, and controlling the electron beam emission and regulation module 102 to carve the nano electrode pattern on the electron beam adhesive layer in an electron beam exposure mode. Wherein, the electron beam lithography parameters are set as follows: the accelerating voltage is 30kV, the magnification is 1200 times, and the electron beam current is 68 pA.

S15: and developing to remove the electron beam glue layer in the exposure area. Here, the silicon wafer coated with the electron beam resist layer is placed in a developing solution in which methyl isobutyl ketone (MIBK): the mass ratio of isophthalic acid (IPA) is 1:3, and the developing time is 90 seconds; and washing the developing area by using deionized water for 15s, and finally blowing the developing area by using a nitrogen gun for 1min to obtain the nano electrode pattern.

S16: and evaporating and plating a gold layer in the nano electrode pattern area. And a high-temperature vacuum thermal evaporation device is adopted for gold material evaporation, a titanium material is adopted as a bonding layer, and the bonding layer is suitable for connecting the gold material and the silicon wafer. The evaporation experiment conditions are as follows: the evaporation voltage of the titanium material is 3V, the evaporation speed is 1.2nm/s, and the thickness of the titanium material is 2 nm; the vapor deposition voltage of the gold material is 2.1V, the vapor deposition speed is 1.2nm/s, and the thickness of the gold material is 30 nm. Because the price of gold is high, the titanium material is adopted as the bonding layer, so that the adhesion effect of gold is improved, and on the other hand, the titanium material is adopted as the bonding layer, so that the titanium material has a certain thickness, and the using amount of gold materials can be reduced.

S17: and removing all the electron beam glue layers to obtain the electrode substrate with the nano electrode pattern. Here, the e-beam gel layer was completely placed in an acetone solution and soaked at a temperature of 75 ℃ for about 2 hours.

The step of S1 includes: cleaning a silicon wafer and dispersing nano particle clusters and nano wires. Cleaning the silicon wafer, wherein the silicon wafer is placed in a glass bottle filled with deionized water, and then the glass bottle is placed in an ultrasonic cleaning machine for ultrasonic cleaning, and the ultrasonic cleaning time is 10-20 minutes and preferably 15 minutes; taking out the silicon wafer, then placing the silicon wafer in a glass bottle filled with acetone solution, and carrying out secondary ultrasonic cleaning, wherein the secondary ultrasonic cleaning time is 12-18 minutes, and preferably 15 minutes. And taking out the cleaned silicon wafer, blowing the surface of the silicon wafer by using a nitrogen gas gun to obtain the silicon wafer without fine impurities attached to the surface, and repeating the steps to clean again if obvious stains exist on the surface. The benefit of sequentially cleaning the wafers with deionized water and acetone solution, respectively, here is the removal of fine contaminants and particulate impurities.

Dispersion of nanoparticle clusters and nanowires: firstly, preparing a nano solution, weighing a proper amount of nano particle clusters and nano wires by adopting a precision electronic balance, mixing alcohol and the weighed nano particle clusters and nano wires in a plastic ware, and placing the plastic ware in an ultrasonic cleaning machine for ultrasonic treatment for 15 minutes to obtain a mixed solution; the mixed solution was placed in a glass bottle and sonicated again for 15 minutes. It should be noted that, in the ultrasonic treatment process, the aqueous solution in the ultrasonic cleaning machine needs to be continuously replaced, and the water temperature in the ultrasonic treatment process is ensured to be below 30 ℃. And then, carrying out spin coating on the nano particle clusters and the nano wires, sucking the nano solution by using a liquid transfer machine, dripping a little of the solution onto the silicon wafer cleaned in the step S11, placing the silicon wafer on a spin coater, setting different rotating speeds to uniformly spin-coat the solution dripped with the nano particle clusters and the nano wires on the silicon wafer, and finally preparing the nano wires and the substrate of the nano particle clusters which are uniformly dispersed. Here, the nano particle cluster adopts silver nano particles, the nano wire adopts carbon nano tubes, and the nano wire and the nano particles respectively take 0.1-0.3mg and 100ml of alcohol solution. It should be noted that the nanoparticle cluster may also adopt silver nanoparticles and copper nanoparticles, and the nanowire may also adopt zinc oxide nanowires and silicon nanowires, wherein the diameter of the nanoparticles is less than 20nm, and the diameter of the nanowires is greater than 100 nm.

Here, the ultrasonic treatment is performed in the steps S11 and S12, the ultrasonic treatment in the step S11 is to clean the silicon wafer, and the ultrasonic treatment in the step S12 is to excite the nano solution by ultrasonic waves to uniformly mix the nano solution and the silicon wafer, so that the method can avoid damage to the nano wires and the nano particles compared with a conventional stirring method. The plastic ware is firstly adopted for operation, so that the plastic surface is rough, the friction force is large, and the ultrasonic treatment time can be shortened.

Between the step of S1 and the step of S2, the method further comprises the following steps: the vacuum-pumping process of the vacuum chamber 101 is performed: the vacuum chamber 101 is closed and a vacuum is drawn on the vacuum chamber 101. The advantage of this arrangement is that the vacuum chamber 101 is vacuumized during calibration, so that the electron beam is in a vacuum working environment, thereby improving the imaging accuracy of the electron beam.

In the step S2, observing the environment in the vacuum chamber 101 by the CCD camera 106, adjusting the coarse positioning sample stage 201, and moving the silicon substrate to a set position; and starting the imaging function of the electron beam emission and regulation module 102, and regulating the fine positioning sample stage 202, the electron beam objective lens 103 and the electron beam emission and regulation module 102 to enable the nano wires and the nano particle clusters of the silicon substrate to present clear imaging on the display device 108. Here, in order to increase the space margin of the fine positioning stage 202, the coarse positioning stage is moved to adjust the electrode base to a set position where the electrode base is positioned directly below the electron beam objective lens 103, and then fine adjustment is performed by the fine positioning stage 202. In the actual operation process, firstly, the coarse positioning sample stage 201 is adjusted to enable the upper surface of the base to be 10-15mm away from the position right below the electron beam objective lens 103; starting the imaging function of the electron beam emission and regulation module 102, setting the electron beam acceleration voltage in the electron beam emission and regulation module 102 to be 5-10KeV, and adjusting the magnification factor of the electron beam objective lens 103 to be between 2000 and 5000 times, so that the nano wire and the nano particle cluster of the silicon substrate present clear imaging on the display device 108.

The step of S3 includes: adjusting the rotational degree of freedom of the coarse positioning sample stage 201 to enable the fine positioning sample stage 202 to incline at an inclination angle alpha, wherein the angle alpha is 5-10 degrees in actual operation; adjusting the fine positioning sample stage 202, and selecting a target nanowire to be positioned in the center of an imaging view; the electron beam objective lens 103 and the electron beam emission and regulation module 102 are adjusted to enable the target nanowire to present a clear image on the display device 108. Here, the adjusting of the electron beam objective lens 103 is to increase the magnification of the electron beam objective lens 103 between 5000-. The arrangement has the advantage that the coarse positioning sample stage is enabled to rotate with a special degree of freedom, the fine positioning sample stage is enabled to incline at a proper angle, the AFM probe is enabled to be at a better operation angle, and the subsequent movement of the nanowires and the nanoparticle clusters is facilitated.

The step of S4 includes: the step of driving the execution end to clamp the target nanowire by using the execution end operating device comprises the following steps: adjusting the electron beam objective lens 103 to reduce the magnification of the electron beam objective lens 103, wherein the magnification of the electron beam objective lens 103 is between 2000-5000 times; here, there are two sets of the first motion mechanisms 203, there is one set of the second motion mechanisms 204, the two sets of the first motion mechanisms 203 are respectively provided with an AFM probe, the second motion mechanisms 204 are provided with a tungsten needle, the two sets of the first motion mechanisms 203 respectively move the AFM probe, so that the AFM probe continuously approaches to the target nanowire, until the tip of the AFM probe and the target nanowire both present clear images on the display device 108, where the minimum distance between the tips of the two sets of the AFM probes and the target nanowire is 10nm, and the action positions of the tip of the AFM probe and the target nanowire are captured; and controlling the first motion mechanism to enable the needle points of the two sets of AFM probes to move to the action position of the target nanowire, so that the needle points of the two AFM probes form a pair of tweezers to clamp the target nanowire.

The step of S5 includes: adjusting the translational degree of freedom of the fine positioning sample stage 202 to separate the target nanowire from the silicon substrate; adjusting the translational degree of freedom of the coarse positioning sample stage 201, and moving the electrode substrate to enable the electrode substrate to be positioned under the target nanowire; and adjusting the translational freedom degree of the fine positioning sample stage 202 to enable two ends of the target nanowire to be respectively positioned right above the two electrodes and to enable two ends of the target nanowire to be respectively contacted with the two electrodes. This is because the nanowires themselves have a certain stiffness; in order to avoid the situation that the nanowires are attached to the AFM probe and are difficult to place, the second motion mechanism 204 is used for controlling the motion of the tungsten needle, the target nanowires are pressed onto the electrode substrate, and the clamped nanowires are placed on the electrodes in an auxiliary mode; and controlling the two sets of first motion mechanisms 203 to separate the needle tips of the two AFM probes from the nanowires, and placing the nanowires on the electrodes by means of the self gravity of the nanowires and the assistance of the tungsten needle. Here, the advantages of the combination of the fine positioning sample stage 202 and the coarse positioning sample stage 201 are fully utilized, and the nano operation device enables the movement of the nano wire to be more flexible.

The step of S6 includes: moving the coarse positioning sample stage 201 to drive the silicon substrate and the electrode substrate to move, so that the silicon substrate is positioned in the center of the visual field; adjusting the fine positioning sample stage 202; selecting a target nanoparticle cluster to be located in the center of an imaging view; and adjusting the electron beam objective lens 103 and the electron beam emission and regulation module 102 to enable the nanoparticle cluster to present clear imaging on the display device 108. Here, the adjusting of the electron beam objective lens 103 is to increase the magnification of the electron beam objective lens 103 between 5000-.

The step of S7 includes: the step of driving the execution end to clamp the target nanoparticle cluster by using the execution end operating device comprises the following steps: adjusting the electron beam objective lens 103 to reduce the magnification of the electron beam objective lens 103, wherein the magnification of the electron beam objective lens 103 is between 2000-5000 times; here, there are three sets of the first motion mechanisms 203, one set of the first motion mechanisms 203 is provided with the optical fiber probe, the other two sets of the first motion mechanisms 203 are respectively provided with an AFM probe, the second motion mechanism 204 is provided with a tungsten needle, the two sets of the first motion mechanisms 203 respectively move the AFM probe, so that the AFM probe is continuously close to the target nanoparticle cluster until the tip of the AFM probe and the target nanoparticle cluster are clearly imaged on the display device 108, where the minimum distance between the tips of the two sets of the AFM probes and the target nanoparticle cluster is 10nm, and the action positions of the tip of the AFM probe and the target nanoparticle cluster are captured; and controlling the first motion mechanism 203 to move the needle points of the two sets of AFM probes to the action position of the target nanoparticle cluster, so that the needle points of the two AFM probes form a pair of tweezers to clamp the nanoparticle cluster.

The step of S8 includes: adjusting the translational degree of freedom of the fine positioning sample stage 202 to separate the target nanoparticle cluster from the silicon substrate; adjusting the translational degree of freedom of the coarse positioning sample stage 201, moving the electrode substrate, and positioning the electrode substrate right below the target nanoparticle cluster; adjusting the translational degree of freedom of the fine positioning sample stage 202 to move the electrode substrate, so that the target nanoparticle cluster is positioned right above the electrode; and adjusting the nanometer operation device to enable the AFM probe to release the target nanometer particle cluster, so that the target nanometer particle cluster is located at the joint of the target nanometer wire and the electrode, wherein the target nanometer particle cluster can be moved to the joint of the target nanometer wire and the electrode by moving the sample stage, and the target nanometer particle cluster can also be moved to the joint of the target nanometer wire and the electrode by adjusting the execution end operation device. Here, the advantages of the combination of the fine positioning sample stage 202 and the coarse positioning sample stage 201 are fully utilized, and the nano operation device enables the movement of the nano wire to be more flexible. And repeating the steps of S5-S7 in sequence to move a plurality of the target nanoparticle clusters to the connection of the target nanowire and the electrode.

The step of connecting the nanowire and the electrode using the near-field light as a heat source and the nanoparticle cluster as a flux in the step of S9 includes:

and adjusting the first motion mechanism to enable the needle point of one set of AFM probe to be positioned at the joint of the nanowire and the electrode, wherein the needle point of the AFM probe is positioned above the nanoparticle and has the minimum distance of 1-5nm with the nanoparticle cluster.

And starting a laser emitting device, adjusting laser parameters such as laser power, wavelength and the like, wherein the laser power is set to be 10-65mW, the laser wavelength is set to be 808nm, and controlling a first movement mechanism to adjust the angle and the position of the optical fiber probe, so that laser is emitted from the optical fiber probe to the nano particle cluster at the nanowire butt joint part, and the tip of the AFM probe is positioned in the laser irradiation range. At the moment, near-field light can be generated between the tip of the AFM probe and the nano-particle cluster, the nano-particle cluster can be melted by controlling the action time of the near-field light for 1-5min, and then the two nanowires are connected. Here, the nanoparticle clusters serve as a connection medium, and connection between different nanowires is achieved by melting of the nanoparticle clusters. The AFM probe is driven to different spatial positions by moving a first motion mechanism, so that the movement of the nanowires and the nanoparticles is realized, and the generation of near-field light is realized in an auxiliary manner.

The embodiment has the advantages that the nanowires and the nanoparticles are uniformly dispersed on the surface of the silicon wafer after being mixed according to a certain proportion, so that the phenomenon of over-concentration or over-dispersion caused by directly coating the nanowires and the nanoparticle clusters is avoided, and the connection efficiency of the nanowires and the electrodes is improved; through the matching of the coarse positioning platform and the fine positioning platform, the nano particle clusters and the nano wires can be captured more efficiently, and the efficiency of nano wire connection and electrode connection is improved; the coarse positioning platform is matched with the first motion mechanism, so that the AFM probe is more convenient to operate, and the connection efficiency of the nanowire and the electrode is improved; by converting far-field light into near-field light and utilizing the near-field light to connect nano particle clusters, the damage of nano wires and nano particles caused by overlarge action area of laser is avoided, and the connection quality of the nano wires and the electrodes is improved.

After the nano-particle clusters are used for completing the connection between the nano-wires and the electrodes, the electron beam emission and regulation module 102 is closed, the vacuum chamber 101 is subjected to unloading vacuum, meanwhile, the protective gas introducing device 105 is opened, protective gas is introduced into the vacuum chamber 101, then the cabin door is opened, and a sample is taken out. This has the advantage that the protective gas prevents the nanowires and nanoparticles from being oxidized and reduces contamination of the inside of the vacuum chamber 101 by the outside air when the vacuum chamber 101 is opened.

It should be noted that the present embodiment is only a preferred embodiment of using the nano-connection device to complete the connection of different nanowires, and the nano-connection device can also complete the connection of different nanowires through other manners. Thus, the present embodiment does not constitute a limitation on the nano-connection means.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (9)

1. The processing method of the near infrared photoelectric device is characterized in that the photoelectric device structure comprises a nanowire, two electrodes (3) and a plurality of nano optical antennas (5) positioned between the two electrodes (3), wherein two ends of the nanowire are respectively connected with the two electrodes (3), and the processing method comprises the following steps:

s1: obtaining a substrate with a calibration pattern;

s2; preparing a photoelectric device substrate by using the substrate with the calibration pattern;

s3: calibrating the electron beam with the optoelectronic device substrate;

s4: preparing a photoelectric device structure on the photoelectric device substrate;

s5: and connecting the nanowire with the electrode, and enabling the nanowire to be in contact with the nano optical antenna to finish the preparation of the near-infrared photoelectric device.

2. The process of fabricating a near infrared optoelectronic device according to claim 1, characterized in that the nano-optical antenna (5) comprises: the disc-type packaging machine comprises a large disc (1) and a plurality of small discs (2), wherein the small discs (2) are arranged on the outer side of the large disc (1) in a circumferential array mode.

3. The method of fabricating a near-infrared optoelectronic device according to claim 2, characterized in that the gap d =15nm between the large disc (1) and the small disc (2).

4. The method of fabricating a near-infrared optoelectronic device according to claim 1, wherein the material of the nanowires is silicon.

5. The method for fabricating a near-infrared photoelectric device according to claim 2, wherein a plurality of nano-optical antennas (5) are provided, and the nano-optical antennas (5) are made of gold.

6. The near infrared optoelectronic device processing method as set forth in claim 1, wherein the step S1 includes:

coating electron beam glue on the surface of the substrate to prepare an electron beam calibration glue layer;

heating the electron beam calibration adhesive layer to cure the electron beam calibration adhesive layer;

designing a calibration pattern by using an industrial personal computer;

the calibration pattern is engraved on the electron beam calibration adhesive layer in an electron beam exposure mode;

developing, removing the electron beam glue in the exposure area of the electron beam calibration glue layer;

evaporating a gold layer on the calibration pattern area;

and removing all the electron beam calibration glue layers to obtain the substrate with the calibration pattern.

7. The near infrared optoelectronic device processing method as set forth in claim 6, wherein the step S2 includes:

preparing an electron beam adhesive layer on one side of the substrate, which is provided with the calibration pattern, wherein the electron beam adhesive layer completely covers the calibration pattern;

heating the electron beam adhesive layer to cure the electron beam adhesive layer;

exposing the electron beam glue layer, wherein an exposure area covers the calibration pattern;

and developing, namely removing the electron beam glue on the exposure area of the electron beam glue layer to obtain the photoelectric device substrate.

8. The method of fabricating a near-infrared optoelectronic device as set forth in claim 7, wherein the step of S4 includes:

keeping the parameters of the electron beam unchanged, and engraving structural patterns of the photoelectric device outside an exposure area of the electron beam glue layer;

developing, removing the electron beam adhesive layer in the structural pattern area of the photoelectric device;

evaporating a gold layer on the pattern area of the photoelectric device structure;

and removing the electron beam adhesive layer to finish the preparation of the photoelectric device structure.

9. The method of fabricating a near-infrared optoelectronic device as claimed in claim 8, wherein the step S3 is performed in a vacuum environment.

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