CN109728792B - Acoustic device and packaging method thereof - Google Patents
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- CN109728792B CN109728792B CN201910005934.7A CN201910005934A CN109728792B CN 109728792 B CN109728792 B CN 109728792B CN 201910005934 A CN201910005934 A CN 201910005934A CN 109728792 B CN109728792 B CN 109728792B
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Abstract
The present disclosure provides an acoustic device and a method of packaging the same. The acoustic device includes: a substrate and an acoustic device arranged opposite to each other, an annular member being provided between the substrate and the acoustic device so as to form a closed chamber between the substrate, the annular member and the acoustic device; a connection pad is arranged on the surface of the substrate, which is close to the acoustic device; the surface of the substrate far away from the acoustic device is provided with a pin pad of the acoustic device, and the pin pad of the acoustic device is electrically connected with the pin pad of the acoustic device through a connecting pad. The semiconductor device can be small in size, simple to manufacture, low in price and easy to integrate by carrying out substrate-level packaging on the acoustic device.
Description
Technical Field
The present disclosure relates to the field of semiconductors, and more particularly, to an acoustic device and a method of packaging the same.
Background
Currently, in the related art of acoustic device packaging, a metal packaging, a plastic packaging, or a surface mount packaging is generally used.
Disclosure of Invention
The inventor finds that in the existing packaging technology, the metal packaging and the plastic packaging have common defects, namely, the pins are long, so that the size of the device is too large, and the device is difficult to integrate with the radio frequency front-end module. The surface-mounted packaging based on ceramics has complex manufacturing process, high price of ceramic materials HTCC and LTCC, and difficulty in integrating with other processes, and meanwhile, the existing acoustic device based on wafer-level packaging has the defects of difficult process realization and high cost. Therefore, there is a need to find a packaging method that is small in size, simple to manufacture, inexpensive, and easy to integrate with other devices.
For this reason, the present disclosure provides a packaging solution that can be realized in a small size, is simple to manufacture, is inexpensive, and is easy to integrate.
According to an aspect of one or more embodiments of the present disclosure, there is provided an acoustic device comprising: a substrate and an acoustic device arranged opposite to each other, an annular member being provided between the substrate and the acoustic device so as to form a closed chamber between the substrate, the annular member and the acoustic device; a connection pad is arranged on the surface of the substrate, which is close to the acoustic device; and a pin bonding pad of the acoustic device is arranged on the surface, far away from the acoustic device, of the substrate, and is electrically connected with the pin bonding pad of the acoustic device through the connection bonding pad.
In some embodiments, the connection pads are electrically connected to pin pads of the acoustic device by metal traces.
In some embodiments, a via is provided on the substrate, and the metal trace extends along the via.
In some embodiments, the pin pads of the acoustic device are located on a surface of the acoustic device proximate to the substrate.
In some embodiments, the pin pads of the acoustic device are aluminum studs, copper studs, or solder balls.
In some embodiments, the height of the enclosed chamber is greater than a predetermined threshold.
In some embodiments, an encapsulation layer covering the acoustic device is provided on a surface of the substrate proximate to the acoustic device.
In some embodiments, the acoustic device comprises a surface acoustic wave SAW filter, a bulk acoustic wave BAW filter, or a film bulk acoustic wave FBAR filter, or comprises a surface acoustic wave SAW duplexer, a bulk acoustic wave BAW duplexer, or a film bulk acoustic wave FBAR duplexer, or comprises a device fabricated using SAW, BAW, or FBAR technology.
In some embodiments, the acoustic apparatus further comprises an electronic device having a heterostructure with the acoustic device, wherein: the electronic device and the acoustic device are positioned on the same side of the substrate, and pin pads of the electronic device are electrically connected with corresponding connection pads.
In some embodiments, the pin pads of the electronic device are electrically connected to corresponding connection pads through a redistribution layer RDL.
In some embodiments, the electronic device includes a radio frequency power amplifier based on GaAs HBT process, gaAs pHEMT process, or GaN process, a low noise amplifier based on GaAs pHEMT process, a switch based on GaAs pHEMT process, at least one of a filter based on IPD process.
In some embodiments, the electronic device includes at least one of a driver stage circuit, a switching circuit, a power supply tracking circuit, an envelope tracking circuit, a dc-dc conversion circuit, an analog-to-digital conversion circuit, a digital-to-analog conversion circuit of a radio frequency power amplifier.
According to another aspect of one or more embodiments of the present disclosure, there is provided a method of packaging an acoustic device, including: generating a ring on the acoustic device; generating a connection pad on one surface of a substrate and generating a pin pad of an acoustic device on the other surface of the substrate, wherein the connection pad is electrically connected with the pin pad of the acoustic device; and bonding an acoustic device to the substrate to form a closed chamber between the substrate, the ring and the acoustic device, the pin pads of the acoustic device being electrically connected to the pin pads of the acoustic device through the connection pads.
In some embodiments, the connection pads are electrically connected to pin pads of the acoustic device by metal traces.
In some embodiments, the metal trace extends along a via disposed on the substrate.
In some embodiments, the pin pads of the acoustic device are disposed on a surface of the acoustic device proximate to the substrate.
In some embodiments, the height of the enclosed chamber is greater than a predetermined threshold.
In some embodiments, an encapsulation layer is formed on a surface of the substrate proximate to the acoustic device to cover the acoustic device.
In some embodiments, an electronic device having a heterostructure with the acoustic device is disposed on the substrate, wherein pin pads of the electronic device are connected with corresponding connection pads.
In some embodiments, the pin pads of the electronic device are connected to corresponding pin pads by a redistribution layer RDL.
Other features of the present disclosure and its advantages will become apparent from the following detailed description of exemplary embodiments of the disclosure, which proceeds with reference to the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present disclosure, and that other drawings may be obtained according to these drawings without inventive faculty for a person skilled in the art.
FIG. 1 is a schematic diagram of one embodiment of an acoustic device of the present disclosure;
FIG. 2 is a schematic diagram of another embodiment of an acoustic device of the present disclosure;
FIG. 3 is a schematic diagram of yet another embodiment of an acoustic device of the present disclosure;
FIG. 4 is a schematic diagram of yet another embodiment of an acoustic device of the present disclosure;
FIG. 5 is a schematic diagram of one embodiment of an acoustic device encapsulation method of the present disclosure;
fig. 6-16 are schematic diagrams of one embodiment of a substrate-level packaging method of an acoustic device of the present disclosure.
Detailed Description
The following description of the technical solutions in the embodiments of the present disclosure will be made clearly and completely with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. All other embodiments, which can be made by one of ordinary skill in the art without inventive effort, based on the embodiments in this disclosure are intended to be within the scope of this disclosure.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless it is specifically stated otherwise.
Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
Fig. 1 is a schematic diagram of one embodiment of an acoustic device of the present disclosure. As shown in fig. 1, the acoustic apparatus includes a substrate 1 and an acoustic device 2 disposed opposite to each other. A ring 3 is provided between the substrate 1 and the acoustic device 2 so as to form a closed chamber 31 between the substrate 1, the ring 3 and the acoustic device 2.
The shape of the ring 3 is not limited to a circular shape, and may be an elliptical shape, a square shape, or other shapes. For example, by making a dam on the acoustic wave device wafer to form the loop 3.
In some embodiments, the ring 3 is bonded to the substrate 1 and the acoustic device 2 by means of gluing.
In some embodiments, the height of the enclosed chamber 31 is greater than a predetermined threshold. For example, the height of the closed chamber 31 is greater than or equal to 1 μm. In addition, passivation is used to protect the active region of the acoustic device 2.
Connection pads 11 and 12 are provided on the surface of the substrate 1 close to the acoustic device 2. The surface of the substrate 1 facing away from the acoustic device 2 is provided with pin pads 13 and 14 of the acoustic device. The pin pad 13 of the acoustic device is electrically connected to the pin pad 21 of the acoustic device via the connection pad 11, and the pin pad 14 of the acoustic device is electrically connected to the pin pad 22 of the acoustic device via the connection pad 12.
In some embodiments, as shown in fig. 1, the pin pads 21 and 22 of the acoustic device 2 are located on the surface of the acoustic device 2 that is close to the substrate 1. For example, the pin pads 21 and 22 of the acoustic device 2 may be aluminum bumps or copper bumps.
In some embodiments, as shown in fig. 1, solder balls 23 are further provided on the pin pads 21 of the acoustic device 2, and solder balls 24 are further provided on the pin pads 22 of the acoustic device 2. By providing solder balls 23 and 24, it is possible to realize electrical connection of the connection pad 11 with the pin pad 21 of the acoustic device and electrical connection of the connection pad 12 with the pin pad 22 of the acoustic device.
In some embodiments, the connection pads are electrically connected to pin pads of the acoustic device by metal traces. For example, as shown in fig. 1, the connection pad 11 is electrically connected to the pin pad 13 of the acoustic device through the metal wire 15, and the connection pad 12 is electrically connected to the pin pad 14 of the acoustic device through the metal wire 16. The material of the metal wire can be gold, silver, copper, iron, aluminum, nickel, palladium or tin, etc.
In some embodiments, as shown in fig. 1, vias 17 and 18 are provided on the substrate 1. Metal trace 15 extends along via 17 and metal trace 16 extends along via 18. Whereby electrical connection of the connection pad 11 and the pin pad 13 of the acoustic device, electrical connection of the connection pad 12 and the pin pad 14 of the acoustic device can be easily achieved
In some embodiments, the pin pads 13, 14 of the acoustic device may be aluminum bumps, copper bumps, or solder balls.
In some embodiments, the acoustic device 2 may comprise a surface acoustic wave SAW filter, a bulk acoustic wave BAW filter, or a film bulk acoustic wave FBAR filter, or comprise a surface acoustic wave SAW duplexer, a bulk acoustic wave BAW duplexer, or a film bulk acoustic wave FBAR duplexer, or comprise devices fabricated using SAW, BAW, or FBAR technology.
In the acoustic device provided in the above embodiments of the present disclosure, by using the substrate to package the acoustic device, a package device that is small in size, simple to manufacture, low in price, and easy to integrate can be realized.
Fig. 2 is a schematic diagram of another embodiment of an acoustic device of the present disclosure. Fig. 2 differs from fig. 1 in that in the embodiment shown in fig. 2, the surface of the substrate 1 close to the acoustic device 2 is provided with an encapsulation layer 20 covering the acoustic device 2.
In some embodiments, an insulating material (e.g., plastic) may be utilized as the encapsulation layer 20 to cover the acoustic device 2, thereby enabling the overall encapsulation of the acoustic device.
Fig. 3 is a schematic diagram of yet another embodiment of an acoustic device of the present disclosure. Fig. 3 differs from fig. 1 in that in the embodiment shown in fig. 3, the acoustic device further comprises an electronic device 4 having a heterostructure with the acoustic device 2.
The electronic device 4 is located on the same side of the substrate 1 as the acoustic device 2, and the pin pads 41 of the electronic device 4 are electrically connected to the corresponding connection pads 11.
In some embodiments, the pin pads 41 of the electronic device 4 are electrically connected with the corresponding connection pads 11 through the redistribution layer RDL 42.
In some embodiments, the electronic device includes a radio frequency power amplifier based on GaAs HBT process, gaAs pHEMT process, or GaN process, a low noise amplifier based on GaAs pHEMT process, a switch based on GaAs pHEMT process, at least one of filters based on IPD process.
In addition, the electronic device may further include at least one of a driver stage circuit, a switching circuit, a power supply tracking circuit, an envelope tracking circuit, a dc-dc conversion circuit, an analog-to-digital conversion circuit, and a digital-to-analog conversion circuit of the radio frequency power amplifier.
Fig. 4 is a schematic diagram of yet another embodiment of an acoustic device of the present disclosure. Fig. 4 differs from fig. 3 in that in the embodiment shown in fig. 4 a plurality of different types of electronic devices are provided on the substrate 1. As shown in fig. 4, an acoustic device 2, an electronic device 4 having a heterostructure with the acoustic device 2, and another electronic device 5 having a heterostructure with the acoustic device 2 may be provided on the substrate 1. The pin pads 51 of the electronic device 5 may be electrically connected with the corresponding connection pads 12 through RDLs 52.
That is, a plurality of acoustic devices and related electronic devices may be integrated on the same substrate 1.
Fig. 5 is a schematic diagram of one embodiment of an acoustic device encapsulation method of the present disclosure.
In step 501, a ring is generated on an acoustic device.
The shape of the ring member is not limited to a circular shape, and may be an elliptical shape, a square shape, or other shapes. For example, by fabricating a dam on the acoustic wave device wafer to form a ring.
In step 502, connection pads are generated on one surface of a substrate and pin pads of an acoustic device are generated on another surface of the substrate, wherein the connection pads are electrically connected with the pin pads of the acoustic device.
In some embodiments, the connection pads are electrically connected to pin pads of the acoustic device by metal traces. For example, the metal traces extend along vias disposed on the substrate.
In step 503, the acoustic device and the substrate are bonded to form a closed chamber between the substrate, the ring, and the acoustic device, and the pin pads of the acoustic device are electrically connected to the pin pads of the acoustic device through the connection pads.
In some embodiments, the height of the enclosed chamber is greater than a predetermined threshold. For example, the height of the closed chamber is greater than or equal to 1 μm.
In some embodiments, the pin pads of the acoustic device are disposed on a surface of the acoustic device proximate to the substrate.
In the method for packaging the acoustic device provided by the embodiment of the disclosure, the substrate is used for packaging the acoustic device, so that the packaging device which is small in size, simple to manufacture, low in price and easy to integrate can be realized.
In some implementations, an encapsulation layer is formed on a surface of the substrate proximate to the acoustic device to cover the acoustic device.
In some embodiments, an electronic device having a heterostructure with an acoustic device is disposed on a substrate, wherein pin pads of the electronic device are connected with corresponding connection pads. For example, the pin pads of the electronic device are connected with the corresponding pin pads by the redistribution layer RDL. Thus, a plurality of acoustic devices and associated electronic devices can be integrated on the same substrate.
The wafer level packaging method of the present disclosure is described below by way of one specific example.
As shown in fig. 6 and 7, pins 611 and 612 of the acoustic device are led out on the acoustic device wafer 61 by means of aluminum studs, copper studs. Fig. 6 is a plan view, and fig. 7 is a side view.
As shown in fig. 8 and 9, a dam 613 is formed on the acoustic wave device wafer. The upper and lower surfaces of the dam 613 are coated with a layer of glue so that the dam 613 is bonded to the acoustic device wafer 61. Fig. 8 is a top view and fig. 9 is a side view.
As shown in fig. 10 and 11, pads 621 and 622 are formed on the upper surface of the substrate 62. Solder ball 623 is made on pad 621 and solder ball 624 is made on pad 622. The substrate 62 may be a multi-layer substrate. Inside the substrate, metal traces are provided in the vias 625 and 626 by providing the vias 625 and 626 to introduce pins on the upper surface to the lower surface. Fig. 10 is a plan view, and fig. 11 is a side view.
As shown in fig. 12, the acoustic wave device wafer is diced to obtain corresponding acoustic wave devices.
As shown in fig. 13, the acoustic wave device is bonded to the substrate 62 in a flip-chip manner such that the bonding pad 611 is connected to the solder ball 623 and the bonding pad 612 is connected to the solder ball 624. In addition, the dam 613, the acoustic device wafer 61, and the substrate 62 constitute a closed cavity 614. The height of the closed cavity 614 is greater than or equal to 1 μm. In addition, passivation is used to protect the active region of the acoustic wave device.
For example, the acoustic wave device is flip-chip mounted to the substrate via a Pick-and-Place process.
As shown in fig. 14, pins 627 and 628 are fabricated by growing aluminum bumps, copper bumps, or solder balls on the lower surface of the substrate 62.
As shown in fig. 15, the acoustic wave device is integrally packaged. The material of the encapsulation layer 63 is an insulating material, such as plastic.
As shown in fig. 16, the substrate-level packaged acoustic device is obtained by dicing.
The substrate-level packaging of the acoustic device is carried out by adopting the substrate, so that the packaging scheme which is small in size, simple to manufacture, low in price and easy to integrate is realized. Meanwhile, the acoustic device is connected with the substrate in a back-off way, so that the acoustic device, the integrated CMOS (complementary metal oxide semiconductor) die, the SOI (silicon on insulator) die and the radio frequency power amplifier die based on the GaAs process are integrated in the same package in a heterogeneous way, the characteristics of low cost and high integration level of the CMOS or SOI die based on Si and the characteristics of high breakdown voltage and high electron mobility of the GaAs process are fully utilized, the acoustic device is widely applied to the radio frequency power amplifier, and the characteristics of a high-density rewiring layer (RDL) of a fan-out chip scale package are realized, so that the radio frequency power amplifier chip with low cost and high performance is realized.
The description of the present disclosure has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the disclosure in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the disclosure and the practical application, and to enable others of ordinary skill in the art to understand the disclosure for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (14)
1. An acoustic device, comprising:
a substrate and an acoustic device arranged opposite to each other, an annular member being provided between the substrate and the acoustic device so as to form a closed chamber between the substrate, the annular member and the acoustic device, the closed chamber having a height equal to 1 μm, wherein the annular member is formed by forming a dam on an acoustic device wafer;
a connection pad is arranged on the surface of the substrate, which is close to the acoustic device;
a pin bonding pad of the acoustic device is arranged on the surface, far away from the acoustic device, of the substrate, and is electrically connected with the pin bonding pad of the acoustic device through the connecting bonding pad;
and the electronic device is provided with a heterostructure with the acoustic device, wherein the electronic device and the acoustic device are positioned on the same side of the substrate, and a pin pad of the electronic device is electrically connected with a corresponding connection pad through a rewiring layer RDL.
2. The acoustic device of claim 1, wherein:
the connection pads are electrically connected with pin pads of the acoustic device through metal wires.
3. The acoustic device of claim 2, wherein:
the substrate is provided with a via hole, and the metal wiring extends along the via hole.
4. The acoustic device of claim 1, wherein:
the pin pads of the acoustic device are located on a surface of the acoustic device proximate to the substrate.
5. The acoustic device of claim 1, wherein:
the pin bonding pad of the acoustic device is an aluminum convex column, a copper convex column or a tin ball.
6. The acoustic device of claim 1, wherein:
and the surface of the substrate, which is close to the acoustic device, is provided with an encapsulation layer for covering the acoustic device.
7. The acoustic device of claim 1, wherein:
the acoustic device comprises a surface acoustic wave SAW filter, a bulk acoustic wave BAW filter or a film bulk acoustic wave FBAR filter, or comprises a surface acoustic wave SAW duplexer, a bulk acoustic wave BAW duplexer or a film bulk acoustic wave FBAR duplexer, or comprises a device manufactured using SAW, BAW or FBAR technology.
8. The acoustic device of any of claims 1-7, wherein:
the electronic device includes a radio frequency power amplifier based on a GaAs HBT process, a GaAs pHEMT process, or a GaN process, a low noise amplifier based on a GaAs pHEMT process, a switch based on a GaAs pHEMT process, and at least one of filters based on an IPD process.
9. The acoustic device of claim 8, wherein:
the electronic device comprises at least one of a driving stage circuit, a switching circuit, a power supply tracking circuit, an envelope tracking circuit, a direct current-direct current conversion circuit, an analog-to-digital conversion circuit and a digital-to-analog conversion circuit of the radio frequency power amplifier.
10. A method of packaging an acoustic device, comprising:
creating a ring on the acoustic device by fabricating a dam on the acoustic device wafer to form the ring;
generating a connection pad on one surface of a substrate and generating a pin pad of an acoustic device on the other surface of the substrate, wherein the connection pad is electrically connected with the pin pad of the acoustic device;
bonding an acoustic device and the substrate so as to form a closed chamber between the substrate, the ring and the acoustic device, the closed chamber having a height equal to 1 μm, the pin pads of the acoustic device being electrically connected to the pin pads of the acoustic device through the connection pads;
and arranging an electronic device with a heterostructure with the acoustic device on the substrate, wherein a pin pad of the electronic device is connected with a corresponding pin pad through a rewiring layer RDL.
11. The method according to claim 10, wherein:
the connection pads are electrically connected with pin pads of the acoustic device through metal wires.
12. The method according to claim 11, wherein:
the metal wire extends along a via hole arranged on the substrate.
13. The method according to claim 10, wherein:
and arranging a pin bonding pad of the acoustic device on the surface, close to the substrate, of the acoustic device.
14. The method of claim 10, further comprising:
an encapsulation layer is formed on a surface of the substrate proximate to the acoustic device to cover the acoustic device.
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