CN109727837A - Plasma apparatus and plasma apparatus monitoring method - Google Patents
Plasma apparatus and plasma apparatus monitoring method Download PDFInfo
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- CN109727837A CN109727837A CN201711033218.7A CN201711033218A CN109727837A CN 109727837 A CN109727837 A CN 109727837A CN 201711033218 A CN201711033218 A CN 201711033218A CN 109727837 A CN109727837 A CN 109727837A
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Abstract
The disclosure provide a kind of plasma apparatus and and plasma apparatus monitoring method, wherein plasma apparatus includes: a process cavity, has a through-hole；One chip seat, is set in process cavity；One translucent element, is set in through-hole；And a shade, it is set on translucent element.Plasma apparatus further includes a fluorescence detector, is set on shade；And a spectral analysis device, it is coupled to fluorescence detector.
Description
Technical field
The disclosure relates generally to a kind of semiconductor equipment and monitoring method, in particular to a kind of plasma apparatus and its prison
Survey method.
Background technique
Semiconductor device has been used in a variety of applications electronically, such as PC, mobile phone, digital still camera, Yi Jiqi
His electronic equipment.Semiconductor device is substantially sequentially via depositing insulating layer or the material of dielectric layer, conductive layer and semiconductor layer
Material is made to a chip and using photoetching technique patterning various material layers to form circuit unit and element thereon
It makes.Many integrated circuits are generally manufactured in a single wafer, and the last other crystal grain of chip between integrated circuit along all
Secant is separated by cutting.For example, a other crystal grain substantially by respectively be packaged in a multi-chip module or other classes
The encapsulation of type.
Semi-conductor industry now promotes production capacity by increasing the size of chip and reduces the price of every chips.So
And when the size of chip increases, the size of the process cavity of the plasma apparatus for handling chip also increases therewith.Therefore
When chip etch process etc. when carrying out in process cavity, the distribution needs of plasma are more accurately controlled in process cavity.
Accordingly, although current plasma apparatus has met its purpose used, not yet meet many other aspects
Requirement.Accordingly, it is desirable to provide the improvement project of plasma apparatus.
Summary of the invention
Present disclose provides a kind of plasma apparatus, comprising: a process cavity has a through-hole；One chip seat, is set to
In process cavity；One translucent element, is set in through-hole；And a shade, it is set on translucent element.Plasma apparatus
Further include a fluorescence detector, is set on shade；And a spectral analysis device, it is coupled to fluorescence detector.
Present disclose provides a kind of plasma apparatus monitoring methods, comprising: the work gas bodily form in one process cavity of excitation
At plasma, light caused by plasma passes through a translucent element of process cavity and is set on translucent element
A shade；And it detects light and generates a detection signal.Plasma apparatus monitoring method further includes according to detection
Signal generates a spectral signal；And shade is adjusted according to spectral signal.
Detailed description of the invention
Fig. 1 is the schematic diagram according to the plasma apparatus of some embodiments of the present disclosure.
Fig. 2 is the system diagram according to the optical monitoring system of some embodiments of the present disclosure.
Fig. 3 A and Fig. 3 B are the schematic diagram according to the shade of some embodiments of the present disclosure.
Fig. 4 is the flow chart according to the plasma apparatus monitoring method of some embodiments of the present disclosure.
Fig. 5 is the schematic diagram according to the shade of some embodiments of the present disclosure.
Fig. 6 is the schematic diagram according to the shade of some embodiments of the present disclosure.
Description of symbols:
Plasma apparatus 1
Process cavity 10
Side wall 11
Through-hole 12
Translucent element 13
Chip seat 20
Gas supply device 30
Gas distributing disc 31
Channel 311
Tap 312
Upper surface 313
Gas reservoir 32
Gas flow controller 33
First radio-frequency unit 40
First electrode plate 41
First radio-frequency power supply 42
Second radio-frequency unit 50
Second electrode plate 51
Second radio-frequency power supply 52
Optical monitoring system 60
Fluorescence detector 61,62
Spectral analysis device 63
Optical sensor 631
Processing unit 64
Shade 70,70a, 70b
Pedestal 71
Adjustment mechanism 72
Anti-dazzling screen 73
Loophole 74
Reticular structure 75
Plasma E1
Wafer W 1
Substrate W11
Etching stopping layer W12
Working lining W13
Unexposed area W131
Exposure area W132
Optical fiber F1
Specific embodiment
The following description provides many different embodiments or example, for implementing the different characteristic of the disclosure.With
Element and arrangement mode described in lower specific examples, the expression embodiment of the present disclosure for only being used to simplify, only as an example, and
Not to limit the embodiment of the present disclosure.For example, the description of structure of the fisrt feature above a second feature includes
It directly contacts between first and second features, or is set between the first and second features with another feature, so that first
It is not directly to contact with second feature.
In addition, this specification has continued to use identical element numbers and/or text in different examples.It is above-mentioned to continue to use only
In order to simplified and clear, being not offered as must be relevant between different embodiment and setting.
The first of this specification and second equal vocabulary, only as the purpose of clear interpretation, not corresponding to and
Limit the scope of the patents.In addition, the vocabulary such as fisrt feature and second feature, and non-limiting it be identical or be different feature.
In the spatially relevant vocabulary that this is used, such as above or below etc., only to one on simple description attached drawing
The relationship of element or a feature relative to another elements or features.Other than the orientation described on attached drawing, it is included in different sides
Position uses or the device of operation.Shape, size and thickness in attached drawing may in order to understand illustration purpose and not according to
Ratio is drawn or is simplified, and purposes of discussion is only provided.
The disclosure provides a kind of shade for plasma apparatus, can will be detected by optical monitoring system etc.
The intensity of gas ions spectrum is maintained between a range, and then reduction erroneous judgement plasma process or plasma apparatus appearance are different
Normal probability.
Fig. 1 is the schematic diagram according to the plasma apparatus 1 of some embodiments of the present disclosure.Plasma apparatus 1 can be used
To implement a plasma process to wafer W 1.In some embodiments, plasma apparatus 1 can be an etching machines, an object
Physical vapor deposition (PVD) equipment, a chemical vapor deposition (CVD) equipment or an ion implanting (Ion Implantation)
Equipment.Plasma process can be an etch process, physical gas-phase deposition, chemical vapor deposition process or ion implanting
Technique.
In this present embodiment, plasma apparatus 1 can be an etching machines, to implement etch process to wafer W 1.Deng
Gas ions equipment 1 may include a process cavity 10, a chip seat 20, a gas supply device 30, one first radio-frequency unit 40,1
Two radio-frequency units 50, an optical monitoring system 60 and a shade 70.
In some embodiments, the pressure of process cavity 10 is between the range of about 10mTorr to 100mTorr.Chip seat 20
It is set in process cavity 10, to carry a wafer W 1.In some embodiments, chip seat 20 can be an electrostatic chip seat.
In some embodiments, wafer W 1 is placed in chip seat 20 towards on a loading end of gas supply device 30.Wafer W 1 it is straight
Diameter is about between the range of 200mm to 450mm.
Gas supply device 30 is in plasma process, supply working gas enters in process cavity 10.Gas supplies
Answering device 30 may include a gas distributing disc 31, a gas reservoir 32 and a gas flow controller 33.Gas distributing disc 31
It in the top of chip seat 20, and can be a disc-shaped structure.
Gas distributing disc 31 has a channel 311 and multiple taps 312.Channel 311 is coupled to gas flow controller 33.
Tap 312 is connected to channel 311, and towards chip seat 20.Gas distributing disc 31 is to spray work gas towards chip seat 20
Body.In some embodiments, the size of gas distributing disc 31 corresponds to the size of wafer W 1.Gas distributing disc 31 can be by quartzy institute
It is made.In some embodiments, loading end, gas distributing disc 31 and the wafer W 1 of chip seat 20 are parallel to each other.
Gas reservoir 32 may be disposed at except process cavity 10, to store working gas.Gas reservoir 32 is coupled to
Gas distributing disc 31.Gas flow controller 33 is coupled to gas reservoir 32 and gas distributing disc 31.Gas flow controller 33 can be set
It is placed in except process cavity 10, the working gas in gas reservoir 32 to be delivered in gas distributing disc 31.It is delivered to gas
The working gas of body distributing disc 31 enters channel 311, and enters in process cavity 10 via tap 312.In some embodiments,
Gas flow controller 33 can be pump or valve.
In some embodiments, working gas includes CF4、CHF3、C2F6、SF6、O2、N2And/or Ar.In the present embodiment
In, the number of gas reservoir 32 and gas flow controller 33 is one, but is not limited.Gas reservoir 32 and air-flow
The number of controller 33 can be two or more, use the demand by different working gas according to different plasma technique and convey
To process cavity 10.
First radio-frequency unit 40 is located on gas distributing disc 31.First radio-frequency unit 40 in process cavity 10 to generate
One electric field.First radio-frequency unit 40 includes a first electrode plate 41 and one first radio-frequency power supply 42.First electrode plate 41 is located at
On gas distributing disc 31.In some embodiments, the size of first electrode plate 41 corresponds to gas distributing disc 31 and/or chip
The area of W1.First electrode plate 41 can be parallel to gas distributing disc 31 and/or wafer W 1.First radio-frequency power supply 42 is coupled to first
Electrode plate 41, and to provide RF energy to first electrode plate 41.
Second radio-frequency unit 50 may connect to chip seat 20.Second radio-frequency unit 50 is to electric in generating in process cavity 10
?.In other words, electric field generates between the first radio-frequency unit 40 and the second radio-frequency unit 50, to excite the work gas bodily form
At plasma E1.
Second radio-frequency unit 50 may include a second electrode plate 51 and one second radio-frequency power supply 52.Second electrode plate 51 can
In chip seat 20.In some embodiments, the size of second electrode plate 51 corresponds to the size of first electrode plate 41.Second
Radio-frequency power supply 52 is coupled to second electrode plate 51, and to provide RF energy to second electrode plate 51.
In etch process, wafer W 1 is set on chip seat 20.In some embodiments, wafer W 1 includes a substrate
W11, an etching stopping layer W12 and a working lining W13.Etching stopping layer W12 is set on substrate W11.Working lining W13 is set
It is placed on etching stopping layer W12.In some embodiments, working lining W13 can be a photoresist layer.Working lining W13 includes
Multiple unexposed area W131 and exposure area W132.
Later, the working gas in gas reservoir 32 is input in gas distributing disc 31 by gas flow controller 33.Gas
Working gas in distributing disc 31 enters process cavity 10 via tap 312.By starting the first radio-frequency unit 40 and second
Radio-frequency unit 50 is to generate electric field between chip seat 20 and gas distributing disc 31.Since wafer W 1 is located at first electrode plate 41
And the 2nd between W131 electrode plate 51, therefore wafer W 1 is located in electric field.
In etch process, working gas excited via electric field after between wafer W 1 and gas distributing disc 31 formed etc. from
Daughter E1.In this present embodiment, plasma E1 can be used to etch the unexposed area of wafer W 1.In another embodiment, etc.
Gas ions E1 can be used to etch the exposure area W132 of wafer W 1.
In general, in etch process, since different chemical materials is brought into plasma E1, plasma E1
Different spectrum can be generated according to the etching degree of working lining W13.For example, when plasma E1 etching working lining W13's
The chemical material of part unexposed area W131, a few thing layer W13 are drifted to process cavity 10, and bring plasma E1 into
In.Different chemical materials can inspire the light of different wave length in plasma E1, and the spectrum of plasma E1 is caused to change
Become.
As further etching working lining W13, the chemical material for bringing plasma E1 into increases, at this time plasma E1
Spectrum will differ from the spectrum of plasma E1 when etch process just starts.Therefore, the etching degree of working lining W13 determines
The spectrum of gas ions E1.
In addition, the chemical material of etching stopping layer W12 can also be brought into plasma when etching stopping layer W12 is etched
In body E1.The chemical material that the spectrum of plasma E1 can also be etched stop-layer W12 changes.In general, etch process
Terminal (end point) may be defined as when unexposed area W131 is fully or substantially removed completely or etching stopping layer W12
When being etched.Therefore, the terminal of etch process can be determined according to the spectrum of plasma E1.
Optical monitoring system 60 is connected to process cavity 10.Spectrum of the optical monitoring system 60 to detect plasma E1,
Use the situation of monitoring etch process and plasma apparatus 1.
Fig. 2 is the system diagram according to the optical monitoring system 60 of some embodiments of the present disclosure.As shown in Figures 1 and 2, light
Learning monitoring system 60 includes multiple fluorescence detectors 61, a fluorescence detector 62, a spectral analysis device 63 and a processing dress
Set 64.As shown in Figure 1, fluorescence detector 61 may be disposed between first electrode plate 41 and gas distributing disc 31.In some realities
It applies in example, fluorescence detector 61 may be disposed on the upper surface 313 of gas distributing disc 31.In this present embodiment, fluorescence detector
61 may pass through the upper surface 313 of gas distributing disc 31, and can be embedded in gas distributing disc 31.
In some embodiments, the gas distributing disc 31 between fluorescence detector 61 and tap 312 can be transparent.
Therefore, light caused by plasma E1 can expose to optics via the tap 312 of gas distributing disc 31 in process cavity 10
Detector 61.In some embodiments, fluorescence detector 61 can be exposed to channel 311.
Fluorescence detector 61 generates detection signal to spectral analysis device 63 to detect the spectrum of plasma E1.
In some embodiments, fluorescence detector 61 can be endpoint detector (end-point detector), to detect working lining
The etched thickness of W13 and the terminal of etch process.
In some embodiments, fluorescence detector 61 is arranged in gas distributing disc 31 in array fashion.Therefore each light
The different zones of wafer W 1 can be corresponded to by learning detector 61.Therefore, fluorescence detector 61 can be used to detect the erosion in the not region of wafer W 1
Quarter degree.
Fluorescence detector 62 is set in the one side wall 11 of process cavity 10, and is located at except process cavity 10.Side wall 11 can be big
It causes to be a vertical side wall, and gas distributing disc 31 or wafer W 1 can be approximately perpendicular to.In this present embodiment, side wall 11 has one
Through-hole 12, and process cavity 10 has the translucent element 13 being set in through-hole 12.
In some embodiments, translucent element 13 can be a laminated structure.Translucent element 13 is adjacent to gas distributing disc 31
And the region between chip seat 20.Fluorescence detector 62 may be disposed on translucent element 13.Therefore, plasma in process cavity 10
Light caused by body E1 can expose to fluorescence detector 62 via translucent element 13.
Spectrum of the fluorescence detector 62 to detect plasma E1, and to generate detection signal to spectral analysis device
63.In some embodiments, fluorescence detector 62 can be optical emission spectroscopy detector (optical emission
Spectrum detector, OES detector), to detect the plasma E1 state and quality of etch process.
Spectral analysis device 63 is coupled to fluorescence detector 61 and fluorescence detector 62.Spectral analysis device 63 is to connect
Fluorescence detector 61 and the generated detection signal of fluorescence detector 62 are received, and generates spectral signal to place according to detection signal
Manage device 64.
In some embodiments, fluorescence detector 61 and fluorescence detector 62 are connected to spectrum analysis via optical fiber F1 and fill
Set 63.Spectral analysis device 63 may include optical sensor 631, such as complementary metal oxide semiconductor
(Complementary Metal-Oxide-Semiconductor, CMOS) sensor or photosensitive coupling element (Charge-
Coupled Device, CCD) sensor.In some embodiments, fluorescence detector 61 and fluorescence detector 62 are via wireless
The mode of transmission will test signal and be transmitted to spectral analysis device.
In some embodiments, light caused by plasma E1 enters fluorescence detector 61 and fluorescence detector
62, and optical sensor 631 is transmitted to via optical fiber F1.Spectral analysis device 63 is according to the light for being irradiated in optical sensor 631
Line generates spectral signal.In other words, spectral signal corresponds to the spectrum of plasma E1.
Processing unit 64 is coupled to spectral analysis device 63, gas flow controller 33, the first radio-frequency power supply 42 and second penetrates
Frequency power 52.Processing unit 64 can judge whether semiconductor equipment 1 event occurs to receive spectral signal according to spectral signal
Barrier situation and generation caution signal.For example, if plasma process or plasma apparatus 1 do not occur abnormal, spectrum
Signal is similar to a reference spectra signal.When spectral signal and an excessive reference spectra signal difference, processing unit 64 can be sentenced
Disconnected semiconductor equipment 1 breaks down and sends warning signal.In addition, processing unit 64 can generate control signal according to spectral signal
Use control etching degree and etching end point.In some embodiments, processing unit 64 can be a computer.
In some embodiments, if processing unit 64 thinks semiconductor equipment failure after analyzing spectral signal or occurs different
Often, then capable of emitting caution signal, and semiconductor equipment may make to stop operating.
In some embodiments, gas flow controller 33 adjusts the work for being output in gas distributing disc 31 according to control signal
The flow of gas.For example, when the amount deficiency of plasma E1, gas flow controller 33 can increase defeated according to control signal
For the flow of the working gas of gas distributing disc 31.
In some embodiments, the first radio-frequency power supply 42 and the second radio-frequency power supply 52 adjust output according to control signal
In first electrode plate 41 and the RF energy of second electrode plate 51, the intensity for changing electric field is used.When the etching of working lining W13
When degree deficiency, the first radio-frequency power supply 42 and the second radio-frequency power supply 52 increase according to control signal and are output in first electrode plate
41 and second electrode plate 51 RF energy.
Shade 70 is set on translucent element 13.Shade 70 can be located at outside process cavity 10, to avoid by it is equal from
Daughter E1 damage.In some embodiments, shade 70 is between translucent element 13 and fluorescence detector 62.Shading dress
The side for setting 70 is connected to the side wall 11 of process cavity 10, and towards translucent element 13.Another opposite side of shading element is connected to
Fluorescence detector 62.Shade 70 can physically block the amount that fluorescence detector 62 is injected by translucent element 13.
Fig. 3 A and Fig. 3 B are the schematic diagram according to the shade 70 of some embodiments of the present disclosure.In this present embodiment,
Shade 70 may include a pedestal 71 and an adjustment mechanism 72.Pedestal 71 is set to the side wall 11 of process cavity 10, and corresponding
In translucent element 13.Pedestal 71 can be a cyclic structure.In some embodiments, pedestal 71 is removable installed in process cavity 10
Side wall 11, with facilitate displacement shade 70.
Adjustment mechanism 72 is set to pedestal 71, and forms the loophole 74 for corresponding to the translucent element 13.Adjustment mechanism 72
To the physical light blocked through translucent element 13.In this present embodiment, the size of loophole 74 is variable.Processing dress
It sets 64 and is electrically connected at adjustment mechanism 72, and to control adjustment mechanism 72, and then adjust the size of the loophole 74.In other words
It says, adjustment mechanism 72 may be adjusted by the screening rate of the light of translucent element 13.In some embodiments, above-mentioned screening rate can be
Between 0% to 80% range.
In some embodiments, the minimum area of loophole 74 is less than the area of translucent element 13.In some embodiments,
The minimum area of loophole 74 is the 50% to 80% of the area of translucent element 13.In some embodiments, loophole 74 is most
Large area is greater than or equal to the area of translucent element 13.The area of translucent element 13 is that translucent element 13 is parallel to loophole 74
It is measured on one section.
In some embodiments, adjustment mechanism 72 include multiple anti-dazzling screens 73, annular arrangement in 71 inner sidewall 11 of pedestal, and
Form loophole 74.Anti-dazzling screen 73 is to the physical light blocked through translucent element 13.Processing unit 64 is according to the spectrum
Signal generates control signal and is sent to adjustment mechanism 72.In some embodiments, adjustment mechanism 72 includes a driver.Adjustment machine
The driver of structure 72 is mobile according to control signal control anti-dazzling screen 73, uses the size of adjustment loophole 74.As shown in Figure 3A, thoroughly
The size of unthreaded hole 74 is smaller.As shown in Figure 3B, the size of loophole 74 is larger.
When implementing plasma process, plasma E1 can gradually cause translucent element 13 to wear and reduce translucent element
13 light transmittance.It will cause spectral signal caused by spectral analysis device 63 when the decline of the light transmittance of translucent element 13 is excessive
It is excessive with the difference of reference spectra signal, it is likely to result in processing unit 64 and judges plasma process or plasma apparatus 1 by accident
There is exception, and then affects the production efficiency of wafer W 1.
Therefore, in this present embodiment, light caused by plasma E1 first can be passed through by light transmission by shade 70
The light transmittance of element 13 and shade 70 reduces, and causes under light transmittance to translucent element 13 because plasma process is worn
When drop, processing unit 64 can control shade 70 and increase loophole 74 according to the difference of spectral signal and reference spectra signal
Size, and then increase light transmittance of the light by translucent element 13 and shade 70.
In other words, light can be stablized by shade 70 and passes through the light transmission of translucent element 13 and shade 70
Rate.When plasma process or plasma apparatus 1 do not occur abnormal, spectral analysis device 63 can produce stable intensity
Spectral signal.Further, since spectral signal is similar to base when plasma process or plasma apparatus 1 do not occur abnormal
Quasi-optical spectrum signal, therefore the analysis of processing unit 64 has the spectral signal of stable intensity, can reduce erroneous judgement plasma process
Or there is abnormal probability in plasma apparatus 1.
For example, when process cavity 10 installs a new translucent element 13, the light transmittance of translucent element 13 is about
100%.By the shade 70 with smaller loophole 74 as shown in Figure 3A can by light by translucent element 13 and
The light transmittance of shade 70 is reduced to a predetermined value, such as 70%.
After completing (such as 100 times, but be not limited thereto) plasma process for several times, the light transmittance of translucent element 13
Decline light transmittance because of the abrasion of plasma process, such as drops to 99%.At this point, processing unit 64 is believed according to spectrum
Number intensity increase loophole 74 size.Make light by the shade 70 with larger loophole 74 as shown in Figure 3B
Line is maintained by the light transmittance of translucent element 13 and shade 70 to aforementioned predetermined value.Therefore, it is utilized in the disclosure
Shade 70 can maintain the intensity of spectral signal caused by spectral analysis device 63, so that processing unit 64 can be more quasi-
Whether true ground analysis of plasma process or plasma apparatus 1 there is exception.
In some embodiments, the ruler of loophole 74 is adjusted after the primary plasma process of the every completion of processing unit 64
It is very little.Once or more, which is carried out, in some embodiments, in 64 Yu Yici plasma process of processing unit adjusts loophole
The movement of 74 size.In some embodiments, processing unit 64 is after the plasma process for executing a pre-determined number, foundation
The size of the whole loophole 74 of the spectral signal of pre-determined number.Above-mentioned pre-determined number can be for twice, three times or more than four times.
In above-mentioned example, spectral signal is analyzed when processing unit 64 and judges that light is filled by translucent element 13 and shading
It sets 70 light transmittance to drop to predetermined value (such as 70%), and it is first by light transmission to increase light by increasing loophole 74
When the light transmittance of part 13 and shade 70, processing unit 64 can notify maintenance personal to carry out the replacement of translucent element 13.In
In some embodiments, by shade 70 by light by the light transmittance of translucent element 13 and shade 70 maintain to
N%.Spectral signal, which is analyzed, when processing unit 64 judges that light is dropped to by the light transmittance of translucent element 13 and shade 70
N%, and when the size of loophole 74 is maximum, processing unit 64 can notify maintenance personal to carry out the replacement of translucent element 13.On
The N% stated can be between 50% to 80% range.
Fig. 4 is the flow chart according to the plasma apparatus monitoring method of some embodiments of the present disclosure.In step 101
In, excite the working gas in process cavity 10 to form plasma E1.Light caused by above-mentioned plasma E1 passes through light transmission
Element 13 and shade 70.In step 103, fluorescence detector 62 detects above-mentioned light and generates a detection signal.
In step S105, spectral analysis device 63 generates spectral signal according to detection signal.In step S107, processing
Device 64 adjusts shade 70 according to spectral signal.In some embodiments, processing unit 64 is adjusted according to spectral signal and is adjusted
Complete machine structure 70 is used and increases the size that adjustment mechanism 70 is formed by loophole 74.
Fig. 5 is the schematic diagram according to the shade 70 of some embodiments of the present disclosure.In this present embodiment, shade
70 may include a pedestal 71 and a reticular structure 75.Pedestal 71 is set on the side wall 11 of process cavity 10, and corresponds to light transmission
Element 13.Pedestal 71 can be a cyclic structure.
Reticular structure 75 is connected to 71 inner sidewall of pedestal, and corresponds to translucent element 13.Reticular structure 75 can be by opaque
Made by material.In some embodiments, reticular structure 75 can be as made by metal material, such as iron.Reticular structure 75 to
The physical light blocked through translucent element 13.Reticular structure 75 is covered can be by the screening rate of the light of translucent element 13
Between 10% to 80% range.In this example, the screening rate of reticular structure 75 can be 30%.
For example, when process cavity 10 installs a new translucent element 13, the light transmittance of translucent element 13 is about
100%.Light can be passed through translucent element 13 and the light transmittance of shade 70 by the reticular structure 75 of shade 70
It is reduced to one first predetermined value, such as 70%.
After completing (such as 100 times, but be not limited thereto) plasma process for several times, the light transmittance of translucent element 13
It can be worn because of plasma process.Spectral signal, which is analyzed, when processing unit 64 judges that light passes through translucent element 13 and screening
It, can be by replacing another shade 70 for light when the light transmittance of electro-optical device 70 is reduced to one second predetermined value (such as 50%)
Line is promoted to the first predetermined value by the light transmittance of translucent element 13 and shade 70.
For example, the screening rate of another shade 70 can be 20%.When the light transmittance of translucent element 13 is reduced to
The shade 70 that can be 30% by screening rate when 80% is replaced into the shade 70 that screening rate is 10%, uses and leads to light
The light transmittance for crossing translucent element 13 and shade 70 is promoted to the first predetermined value.
Spectral signal, which is analyzed, when processing unit 64 judges that light passes through translucent element 13 and the light transmittance of shade 70
It drops to the second predetermined value, and when the size of loophole 74 is maximum, displacement translucent element 13 can be carried out.Therefore, in the disclosure
It is middle to maintain the intensity of spectral signal between a range using shade 70, so that processing unit 64 can accurately divide
Whether analysis plasma process or plasma apparatus 1 there is exception.
Fig. 6 is the schematic diagram according to the shade 70 of some embodiments of the present disclosure.In this present embodiment, plasma
Equipment 1 can have multiple shades 70.In some embodiments, shade 70 can be for more than two or three.
The masking of reticular structure 75 of each shade 70 by the screening rate of the light of translucent element 13 can for 10% to
Between 70% range.In some embodiments, the reticular structure 75 of each shade 70 is identical, and can be had identical
Screening rate, use reduce shade 70 cost of manufacture.
In this present embodiment, as an example with two shades 70a, 70b.The reticular structure 75 of each shade 70
Screening rate can be 20%.The reticular structure 75 of shade 70a and the orientation of reticular structure 75 of shade 70b are different.
By adjusting the orientation of the reticular structure 75 of the reticular structure 75 or shade 70b of shade 70a light can be passed through
The light transmittance of translucent element 13 and shade 70 is to one first predetermined value, such as 70%.
After completing (such as 100 times, but be not limited thereto) plasma process for several times, the light transmittance of translucent element 13
It can be worn because of plasma process.When light is reduced to one by the light transmittance of translucent element 13 and shade 70
It, can be by the way that the first shade 70a or the second shade 70b be removed, by light when two predetermined values (such as 50%)
The first predetermined value is promoted to by the light transmittance of translucent element 13 and shade 70.
In some embodiments, when light is reduced to one second by the light transmittance of translucent element 13 and shade 70
It, can be by the way that the first shade 70a be rotated relative to the second shade 70b, by light when predetermined value (such as 50%)
Line is promoted to the first predetermined value by the light transmittance of translucent element 13 and shade 70.
Spectral signal, which is analyzed, when processing unit 64 judges that light passes through translucent element 13 and the light transmittance of shade 70
The second predetermined value is dropped to, and translucent element 13 and shade 70 can not be passed through by increasing loophole 74 to increase light
Light transmittance when, can carry out displacement translucent element 13.
In conclusion the shade of the embodiment of the present disclosure, it can be by the strong of the spectral signal detected by fluorescence detector
Degree is maintained between a range, and then accurately analysis of plasma process or plasma apparatus whether exception can occurs.
Present disclose provides a kind of plasma apparatus, comprising: a process cavity has a through-hole；One chip seat, is set to
In process cavity；One translucent element, is set in through-hole；One shade, is set on translucent element；One first optical detection
Device is set on shade；And a spectral analysis device, it is coupled to fluorescence detector.
In some embodiments, shade includes: a pedestal, is set to process cavity；And an adjustment mechanism, it is set to
Pedestal, and form the loophole for corresponding to translucent element.
In some embodiments, adjustment mechanism includes multiple anti-dazzling screens, and annular arrangement forms loophole in pedestal.
In some embodiments, plasma apparatus further includes a processing unit, be electrically connected at spectral analysis device with
And adjustment mechanism, and to control adjustment mechanism, and then adjust the size of loophole.
In some embodiments, fluorescence detector is to detect the light across loophole and generate a detection signal transmission
To spectral analysis device, spectral analysis device generates a spectral signal according to detection signal and is sent to processing unit, and handles dress
It sets and controls adjustment mechanism according to spectral signal.
In some embodiments, adjustment mechanism includes: a pedestal, is set to process cavity；And a reticular structure, it is set to
Pedestal, and correspond to translucent element, wherein reticular structure is as made by opaque material.
In some embodiments, plasma apparatus further include: a gas distributing disc is set in process cavity, and be located at
The top of chip seat；One gas reservoir is coupled to gas distributing disc；And one second fluorescence detector, it is set to gas point
On cloth disk.Gas distributing disc is to supply a working gas towards chip seat.
In some embodiments, plasma apparatus further include: one first radio-frequency unit is located on gas distributing disc；With
And one second radio-frequency unit, be coupled to chip seat, wherein the first radio-frequency unit and the second radio-frequency unit in chip seat with
And an electric field is generated between gas distributing disc, and electric field is to excite working gas to form plasma.
Present disclose provides a kind of plasma apparatus monitoring methods, comprising: the work gas bodily form in one process cavity of excitation
At plasma, light caused by plasma passes through a translucent element of process cavity and is set on translucent element
A shade；And it detects light and generates a detection signal.Plasma apparatus monitoring method further includes according to detection
Signal generates a spectral signal；And shade is adjusted according to spectral signal.
In some embodiments, the size of the loophole according to spectral signal adjustment shade.
Above-mentioned published feature can be combined with each other in any appropriate manner with one or more published embodiments, repair
Decorations, displacement or conversion, are not limited to specific embodiment.
Though the disclosure is disclosed as above with various embodiments, however it is only exemplary reference rather than the model to limit the disclosure
It encloses, anyone skilled in the art, is not departing from spirit and scope of the present disclosure, when can do a little change and retouching.Cause
This above-described embodiment is not limited to the scope of the present disclosure, and the protection scope of the disclosure is worked as to be defined depending on appended claims
Subject to person.
Claims (10)
1. a kind of plasma apparatus, comprising:
One process cavity has a through-hole；
One chip seat, is set in the process cavity；
One translucent element is set in the through-hole；
One shade is set on the translucent element；
One first fluorescence detector, is set on the shade；And
One spectral analysis device is coupled to first fluorescence detector.
2. plasma apparatus as described in claim 1, wherein the shade includes:
One pedestal is set in the process cavity；And
One adjustment mechanism is set on the pedestal, and forms the loophole for corresponding to the translucent element.
3. plasma apparatus as claimed in claim 2, wherein the adjustment mechanism includes multiple anti-dazzling screens, and annular arrangement is in this
On pedestal, and form the loophole.
4. plasma apparatus as claimed in claim 2 further includes a processing unit, is electrically connected at the spectral analysis device
And the adjustment mechanism, and to control the adjustment mechanism, and then adjust the size of the loophole.
5. plasma apparatus as claimed in claim 4, wherein first fluorescence detector is to detect across the loophole
Light and generate one detection signal be sent to the spectral analysis device, the spectral analysis device according to the detection signal generate one
Spectral signal is sent to the processing unit, and the processing unit controls the adjustment mechanism according to the spectral signal.
6. plasma apparatus as described in claim 1, wherein the adjustment mechanism includes:
One pedestal is set in the process cavity；And
One reticular structure is set on the pedestal, and corresponds to the translucent element, and wherein the reticular structure is by opaque material institute
It is made.
7. such as plasma apparatus described in any one of claims 1 to 6, further includes:
One gas distributing disc, is set in the process cavity, and is located at the top of the chip seat；
One gas reservoir is coupled to the gas distributing disc；And
One second fluorescence detector is set on the gas distributing disc,
Wherein the gas distributing disc is to supply a working gas towards the chip seat.
8. plasma apparatus as claimed in claim 7, further includes:
One first radio-frequency unit is located on the gas distributing disc；And
One second radio-frequency unit is coupled to the chip seat,
Wherein first radio-frequency unit and second radio-frequency unit between the chip seat and the gas distributing disc to produce
A raw electric field, and the electric field is to excite the working gas to form plasma.
9. a kind of plasma apparatus monitoring method, comprising:
The working gas in a process cavity is excited to form plasma, wherein light caused by the plasma passes through the technique
One translucent element of chamber and the shade being set on the translucent element；
It detects the light and generates a detection signal；
A spectral signal is generated according to the detection signal；And
The shade is adjusted according to the spectral signal.
10. plasma apparatus monitoring method as claimed in claim 9, wherein the step of adjusting the shade includes foundation
The spectral signal adjusts the size of a loophole of the shade.
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| US4859277A (en) * | 1988-05-03 | 1989-08-22 | Texas Instruments Incorporated | Method for measuring plasma properties in semiconductor processing |
| TWI358738B (en) * | 2007-07-26 | 2012-02-21 | Applied Materials Inc | Plasma reactor with reduced electrical skew using |
| TW201327622A (en) * | 2011-12-23 | 2013-07-01 | Electro Scient Ind Inc | Method and apparatus for adjusting radiation spot size |
| TW201622491A (en) * | 2014-10-14 | 2016-06-16 | 應用材料股份有限公司 | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4859277A (en) * | 1988-05-03 | 1989-08-22 | Texas Instruments Incorporated | Method for measuring plasma properties in semiconductor processing |
| TWI358738B (en) * | 2007-07-26 | 2012-02-21 | Applied Materials Inc | Plasma reactor with reduced electrical skew using |
| TW201327622A (en) * | 2011-12-23 | 2013-07-01 | Electro Scient Ind Inc | Method and apparatus for adjusting radiation spot size |
| TW201622491A (en) * | 2014-10-14 | 2016-06-16 | 應用材料股份有限公司 | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
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