CN109727705A - A kind of compound transparent electricity conductive film and preparation method thereof - Google Patents
A kind of compound transparent electricity conductive film and preparation method thereof Download PDFInfo
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- CN109727705A CN109727705A CN201910173867.XA CN201910173867A CN109727705A CN 109727705 A CN109727705 A CN 109727705A CN 201910173867 A CN201910173867 A CN 201910173867A CN 109727705 A CN109727705 A CN 109727705A
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Abstract
The invention discloses a kind of compound transparent electricity conductive films and preparation method thereof.Compound transparent electricity conductive film of the invention mainly includes silver nanowires conductive network, a small amount of nano SiO 2 particle, the polyvinyl alcohol matrix for being present in silver nanowires upper and lower surface.Silver nanowires is primarily used to form the conductive network of transparent conductive film；A small amount of nano SiO 2 particle is mainly for making silver nanowires be uniformly dispersed and stacking between silver nanowires is made closely to reduce contact resistance；Polyvinyl alcohol does not fall off silver nanowires as matrix, guarantees the reliable and stable of transparent conductive film.Transparent conductive film of the invention has preferable electric conductivity, can be applied in real life.
Description
Technical field
The invention belongs to conductive material technical field, in particular to a kind of compound transparent electricity conductive film and preparation method thereof.
Background technique
Transparent conductive film is a kind of a kind of conductive film in visible-range simultaneously again with high transmittance of energy, is
The important component of many photosensitive electronic devices, in flat-panel monitor, solar cell, light emitting diode (LED), Low emissivity glass
The fields such as glass, anti-electromagnetic interference transparency window, which suffer from, to be widely applied.Indium tin oxide (ITO) transparent conductive film application is compared
Extensively, but since phosphide element is somewhat expensive, and oxide material brittleness is bigger, is difficult to meet the growth requirement of electronic device.Cause
This, the transparent conductive film based on the emerging nano material preparation such as graphene, carbon nanotube, metal nanometer line increasingly causes people
Concern.
In recent years, silver nanowires is deposited on to the silver nanowires transparent conductive film prepared on macromolecule matrix due to having
The advantages that higher transparency, sheet resistance are low, surface is smooth has relatively broad application in field of photoelectric devices.Yin Na
Nanowire surface has the polyvinylpyrrolidone (PVP) of one layer of insulation, and PVP layers can hinder transmission of the electronics between silver nanowires,
So that the resistance of transparent conductive film increases.Therefore, researcher often uses 200 DEG C or more of temperature in previous studies
Degree handles silver nanowires, removes PVP layers, and silver nanowires can be sintered, so that contact resistance reduces.But
Such high temperature can make polymer-based end deform, can even decompose, and affect the comprehensive performance of transparent conductive film.This
Outside, it is also limitation transparent conductive film that silver nanowires dispersion is uneven, contacting between silver nanowires does not lead to contact resistance closely greatly
The restraining factors of performance.
Summary of the invention
In view of the above-mentioned problems, compound transparent electricity conductive film of the invention mainly includes silver nanowires conductive network, is present in
A small amount of nano SiO 2 particle, the polyvinyl alcohol matrix of silver nanowires upper and lower surface.Silver nanowires is primarily used to form transparent
The conductive network of conductive film；A small amount of nano SiO 2 particle is mainly for making silver nanowires be uniformly dispersed and make silver nanoparticle
Stacking closely reduces contact resistance between line；Polyvinyl alcohol does not fall off silver nanowires as matrix, guarantees transparent conductive film
It is reliable and stable.Transparent conductive film of the invention has preferable electric conductivity, can be applied in real life.
Technical scheme is as follows:
Compound transparent electricity conductive film provided by the invention includes silver nanowires conductive network, is present in following table in silver nanowires
A small amount of nano SiO 2 particle, the polyvinyl alcohol matrix in face.Preparation method, comprising:
(1) substrate is handled with acetone, EtOH Sonicate respectively, obtains clean substrate.Nano SiO 2 particle is dispersed
On substrate, 60 DEG C are dried for liquid spin coating, obtain with a small amount of nano SiO 2 particle layer；
(2) silver nanowires dispersion liquid is spin-coated on the substrate with a small amount of nano SiO 2 particle layer, natural conditions
Lower placement 4-8h slowly volatilizees to solvent；
(3) a small amount of nano SiO 2 particle of spin coating again, 60 DEG C are dried, and after solvent volatilization, obtain silver nanowires and lead
Power grid network layers, and all there is a small amount of nano SiO 2 particle up and down.It is subsequently placed in Muffle furnace, is sintered silver nanowires；
(4) polyvinyl alcohol aqueous dispersions are spin-coated on surface, after water volatilization, film are removed from substrate, is obtained
Bright conductive film.
The substrate is sheet glass resistant to high temperature or silicon wafer.
The length of the silver nanowires is 10-50 μm, and diameter 50-200nm, dispersion liquid is n-butanol.
The nano SiO 2 particle is 20-40nm.There are phases between silicon dioxide granule and silver nanowires particle
Interaction deposits silicon dioxide granule for the first time mainly for promoting silver nanowires on substrate evenly dispersed；Second heavy
Product reduces contact resistance mainly for keeping stacking between silver nanowires close.
The spin coating process is to carry out spin coating with sol evenning machine with 800~1200 revs/min of revolving speed.
The sintering temperature of the silver nanowires is 200-300 DEG C.
Detailed description of the invention
Fig. 1 is the digital photograph of compound transparent electricity conductive film prepared by the embodiment of the present invention 1
Fig. 2 is the stereoscan photograph of compound transparent electricity conductive film prepared by the embodiment of the present invention 2
Specific embodiment
Embodiment 1
(1) silicon wafer 5min is handled with acetone, EtOH Sonicate respectively, Wafer Cleaning is clean.By nano SiO 2 particle
Dispersion liquid spin coating on substrate, is heated to 60 DEG C of dry 30min, obtains with a small amount of nano SiO 2 particle layer；
(2) the silver nanowires n-butanol dispersion liquid that diameter is 50nm is spin-coated on a small amount of nano SiO 2 particle layer
Substrate on, place 4h under natural conditions, slowly volatilize to solvent；
(3) a small amount of nano SiO 2 particle of spin coating again is heated to 60 DEG C of dry 30min and obtains Yin Na after solvent volatilization
Rice noodles conductive mesh network layers, and all there is a small amount of nano SiO 2 particle up and down.It is subsequently placed in Muffle furnace, is heated to 200
DEG C maintain 10min be sintered silver nanowires；
(4) polyvinyl alcohol aqueous dispersions are spin-coated on surface, after water volatilization, film are removed from substrate, is obtained
Bright conductive film.
Embodiment 2
(1) sheet glass 10min is handled with acetone, EtOH Sonicate respectively, sheet glass is cleaned up.By silica nanometer
Particle dispersion spin coating on substrate, is heated to 60 DEG C of dry 30min, obtains with a small amount of nano SiO 2 particle layer；
(2) the silver nanowires n-butanol dispersion liquid that diameter is 200nm is spin-coated on a small amount of nano SiO 2 particle
On the substrate of layer, 8h is placed under natural conditions, is slowly volatilized to solvent；
(3) a small amount of nano SiO 2 particle of spin coating again is heated to 60 DEG C of dry 30min and obtains Yin Na after solvent volatilization
Rice noodles conductive mesh network layers, and all there is a small amount of nano SiO 2 particle up and down.It is subsequently placed in Muffle furnace, is heated to 300
DEG C maintain 10min be sintered silver nanowires；
(4) polyvinyl alcohol aqueous dispersions are spin-coated on surface, after water volatilization, film are removed from substrate, is obtained
Bright conductive film.
Claims (6)
1. a kind of compound transparent electricity conductive film includes silver nanowires conductive network, is present in a small amount of the two of silver nanowires upper and lower surface
Silica nano particle, polyvinyl alcohol matrix, preparation method include:
(1) substrate is handled with acetone, EtOH Sonicate respectively, obtains clean substrate；Nano SiO 2 particle dispersion liquid is revolved
It applies on substrate, 60 DEG C are dried, and obtain with a small amount of nano SiO 2 particle layer；
(2) silver nanowires dispersion liquid is spin-coated on the substrate with a small amount of nano SiO 2 particle layer, natural conditions decentralization
4-8h is set, is slowly volatilized to solvent；
(3) a small amount of nano SiO 2 particle of spin coating again, 60 DEG C are dried, and after solvent volatilization, obtain silver nanowires conductive mesh
Network layers, and all there is a small amount of nano SiO 2 particle up and down；It is subsequently placed in Muffle furnace, is sintered silver nanowires；
(4) polyvinyl alcohol aqueous dispersions are spin-coated on surface, after water volatilization, film are removed from substrate, obtains transparent lead
Conductive film.
2. compound transparent electricity conductive film described in claim 1 and preparation method thereof, it is characterised in that the substrate is resistance to height
The sheet glass or silicon wafer of temperature.
3. compound transparent electricity conductive film described in claim 1 and preparation method thereof, it is characterised in that the silver nanowires
Length is 10-50 μm, and diameter 50-200nm, dispersion liquid is n-butanol.
4. compound transparent electricity conductive film described in claim 1 and preparation method thereof, it is characterised in that the silica is received
Rice grain is 20-40nm.There is interaction between silicon dioxide granule and silver nanowires particle, deposits silica for the first time
Particle is mainly for promoting silver nanowires on substrate evenly dispersed；Second of deposition is mainly for making stacking between silver nanowires
Closely, reduce contact resistance.
5. compound transparent electricity conductive film described in claim 1 and preparation method thereof, it is characterised in that the spin coating process is
Spin coating is carried out with 800~1200 revs/min of revolving speed with sol evenning machine.
6. compound transparent electricity conductive film described in claim 1 and preparation method thereof, it is characterised in that the silver nanowires
Sintering temperature is 200-300 DEG C.
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| CN201910173867.XA CN109727705A (en) | 2019-03-08 | 2019-03-08 | A kind of compound transparent electricity conductive film and preparation method thereof |
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| CN201910173867.XA CN109727705A (en) | 2019-03-08 | 2019-03-08 | A kind of compound transparent electricity conductive film and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110045876A (en) * | 2019-05-09 | 2019-07-23 | 广州聚达光电有限公司 | A kind of composite double layer ultrathin flexible touch screen sensor and preparation method thereof |
| CN112863766A (en) * | 2021-01-12 | 2021-05-28 | 山东大学 | Method for preparing coffee ring conductive film based on silicon substrate and application |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170042271A (en) * | 2017-04-06 | 2017-04-18 | 연세대학교 산학협력단 | Transparent electrode and manufacturing method thereof |
| CN107068291A (en) * | 2017-04-10 | 2017-08-18 | 武汉理工大学 | A kind of nano silver wire transparent conductive film that shifts is to the method for flexible substrate |
-
2019
- 2019-03-08 CN CN201910173867.XA patent/CN109727705A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170042271A (en) * | 2017-04-06 | 2017-04-18 | 연세대학교 산학협력단 | Transparent electrode and manufacturing method thereof |
| CN107068291A (en) * | 2017-04-10 | 2017-08-18 | 武汉理工大学 | A kind of nano silver wire transparent conductive film that shifts is to the method for flexible substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110045876A (en) * | 2019-05-09 | 2019-07-23 | 广州聚达光电有限公司 | A kind of composite double layer ultrathin flexible touch screen sensor and preparation method thereof |
| CN112863766A (en) * | 2021-01-12 | 2021-05-28 | 山东大学 | Method for preparing coffee ring conductive film based on silicon substrate and application |
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