CN109725391B - 接收器光学组件及其组装方法 - Google Patents

接收器光学组件及其组装方法 Download PDF

Info

Publication number
CN109725391B
CN109725391B CN201811251719.7A CN201811251719A CN109725391B CN 109725391 B CN109725391 B CN 109725391B CN 201811251719 A CN201811251719 A CN 201811251719A CN 109725391 B CN109725391 B CN 109725391B
Authority
CN
China
Prior art keywords
preamplifier
mount
sub
signal
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811251719.7A
Other languages
English (en)
Other versions
CN109725391A (zh
Inventor
前川享平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017208479A external-priority patent/JP2019083228A/ja
Priority claimed from JP2018054404A external-priority patent/JP7004304B2/ja
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Publication of CN109725391A publication Critical patent/CN109725391A/zh
Application granted granted Critical
Publication of CN109725391B publication Critical patent/CN109725391B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/4239—Adhesive bonding; Encapsulation with polymer material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48105—Connecting bonding areas at different heights
    • H01L2224/48106—Connecting bonding areas at different heights the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/4917—Crossed wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15162—Top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)

Abstract

本发明披露了一种接收器光学组件及其组装方法，接收器光学组件接收光信号并生成与光信号对应的电信号。该组件包括光电二极管(PD)、子安装座、前置放大器和管座。由绝缘材料制成的子安装座上安装有PD。接收由PD生成的光电流的前置放大器利用粘合剂通过子安装座安装PD。前置放大器生成与光电流对应的电信号并且具有信号焊盘和其它焊盘。安装有前置放大器的管座设置有与前置放大器的信号焊盘引线键合的引线端子。信号焊盘相对于子安装座的距离大于从其它焊盘到子安装座的距离。

Description

接收器光学组件及其组装方法
技术领域
本发明涉及一种接收器光学组件及其组装方法。
背景技术
日本专利申请公开No.3623144已披露了具有被称为同轴型封装的接收器光学组件。其中披露的接收器光学组件设置有均安装在封装的管座上的光电二极管(PD)和前置放大器。PD和前置放大器经由接合线与固定在管座中的对应的引线脚电连接。
在这种接收器光学组件中，管座的用于安装光学和电学部件的区域有时受限。具体地说，最近的前置放大器随着其所需的功能的增加而使得前置放大器的尺寸扩大，这进一步限制了将这种前置放大器安装在管座上。当PD偏离管座上的光学位置时，PD的灵敏度可能降低。
发明内容
本发明的一个方面涉及一种接收器光学组件，该接收器光学组件接收光信号并生成与所述光信号对应的电信号。接收器光学组件包括光电二极管(PD)、子安装座、前置放大器和管座。PD接收所述光信号并生成与所述光信号对应的光电流。可以由绝缘材料制成的子安装座上安装有PD并且设置有输送所述光电流的互连部。前置放大器接收光电流并生成电信号。前置放大器利用粘合剂在所述前置放大器上安装带有所述PD的所述子安装座，并且所述前置放大器具有信号焊盘和其它焊盘，其中所述信号焊盘与所述子安装座的所述互连部电连接。其上安装有带有所述子安装座和所述PD的所述前置放大器的管座，设置有与所述前置放大器电连接的引线端子，其中所述电信号通过所述引线端子向外输出。本发明的接收器光学组件的特征在于：所述前置放大器的所述信号焊盘相对于所述子安装座的距离大于从所述前置放大器的所述其它焊盘到所述子安装座的距离。
本发明的另一方面涉及一种组装接收器光学组件的方法。该方法包括以下步骤：(a)将前置放大器和电容器安装在设置有引线端子的管座上；(b)使所述前置放大器和所述电容器与所述引线端子引线键合；(c)用粘合剂将安装于子安装座上的光电二极管(PD)安装在所述前置放大器上，其中所述子安装座具有与所述PD电连接的互连部；以及(d)使所述子安装座上的所述互连部与所述前置放大器引线键合。
附图说明
参考附图，阅读下面对本发明的优选实施例的详细描述中将能更佳地理解上述和其它目的、方面以及优点，其中：
图1是根据本发明的实施例的接收器光学组件的沿插座的轴线Ax截取的剖视图；
图2是将管座上的光电二极管、子安装座和前置放大器的组件放大的剖视图；
图3是光学器件的主表面的俯视图，其中为了示出光学器件的主表面，图3去除了盖；
图4是前置放大器的顶表面的俯视图；
图5是子安装座的顶表面的俯视图；
图6是示出根据前述子安装座变型的另一子安装座的顶表面的俯视图；
图7是示出根据又一变型例的子安装座的顶表面的俯视图；
图8是示出根据第二变型例的管座的主表面的俯视图；
图9是在组装根据本发明的第二实施例的接收器光学组件的步骤处的接收器光学组件的俯视图；
图10是在图9所示的步骤之后的步骤处的接收器光学组件的俯视图；
图11是在图10所示的步骤之后的步骤处的接收器光学组件的俯视图；
图12A和图12B是接收器光学组件的沿均在图11中示出的线XIIa-XIIa和XIIb-XIIb截取的剖视图；
图13是在图11所示的步骤之后的步骤处的接收器光学组件的俯视图；
图14是接收器光学组件的沿图13中示出的线XIV-XIV截取的剖视图；
图15是根据第三变型例的信号焊盘和子安装座的剖视图；
图16是根据第四变型例的前置放大器的信号焊盘附近的子安装座和前置放大器的剖视图；
图17A是第五变型例的信号焊盘和子安装座附近的剖视图，图17B是第五变型例的柱的透视图，并且图17C是柱的俯视图；
图18A是根据第六变型例的信号焊盘的剖视图，并且图18B是根据第六变型例的信号焊盘中的柱的透视图；
图19是管座的主表面的俯视图，其中管座安装有经由子安装座位于前置放大器上的PD，而前置放大器的偏压焊盘通过两个电容器与引线端子连接；
图20是根据常规接收器光学组件的管座的主表面的俯视图；以及
图21是根据又一常规接收器光学组件的管座的主表面的俯视图。
具体实施方式
接下来，将参考附图对本发明的实施例进行描述。然而，本发明不限于该实施例，并且本发明具有其要求保护的范围以及该范围和等同内容内的全部改变和修改。在附图的描述中，彼此相同或相似的附图标记或符号将指彼此相同或相似的元件，并且不重复进行解释。
第一实施例
图1是根据本发明的实施例的接收器光学组件1A的沿插座10的轴线Ax截取的剖视图。如图1所示，接收器光学组件1A包括插座10和光学器件20，其中插座10的内部接纳外部光纤，同时光学器件20被固定于插座10。插座10包括插头11、衬套14、套管16和壳18。插头11包括位于其中央的耦合光纤13。
具有沿插座10的轴线Ax延伸的柱体形状的插头11设置有前端11a和后端11b。在下述描述中，“前”、“顶”、“主”和/或“向前”的方向对应于关于光学器件20的插座10一侧，同时，“后”、“底”和/或“背”的方向是关于插座10的光学器件20一侧。然而，方向的这些限定仅用于说明的目的，并且不会限制本发明的范围。与固定在外部光纤的末端中的插芯物理接触的前端11a被加工成凸状。面向光学器件20的后端11b相对于插座10的轴线Ax倾斜例如约8°。插头11还设置有外表面11c和孔11d，孔11d的直径稍大于耦合光纤13的直径，其中，孔11d沿插座10的轴线Ax从前端11a延伸到后端11b。插头11可以由具有相当的体积模量的诸如氧化锆(ZrO2)等陶瓷制成，以确保与外部光纤的插芯的物理接触。
耦合光纤13可以是由硅制成的单模光纤(SMF)的类型且没有任何护套，耦合光纤13沿轴线Ax延伸并且具有前端13a和后端13b。耦合光纤13固定在插头11的孔11d中，并在插头11的前端11a中露出前端13a以与外部光纤的插芯的末端物理接触，同时后端13b在插头11的后端11b中露出，以与光学器件20中的光电二极管(PD)21光学耦合。耦合光纤13具有例如125μm的外径。
衬套14具有带有孔14d的筒状形状，孔14d具有圆形截面，插头11固定在孔14d内，衬套14可以由金属(通常为不锈钢)制成。衬套14设置有前端14a、后端14b和外表面14c。孔14d从前端14a延伸到后端14b。后端14b面向光学器件20。插头11压配合在衬套14的孔14d中，即，插头11的外表面11c与衬套14的孔14d的表面紧密接触以通过衬套14保持插头11。
套管16也具有带有孔16d的筒状形状并沿轴线Ax延伸，套管16与插头11相同，可以由例如氧化锆(ZrO2)等陶瓷制成。套管16设置有前端16a、后端16b、外表面16c和孔16d，孔16d的直径大致等于插头11的外径。套管16的孔16d从后端16b接纳插头11。即，套管16的后侧被置于插头11的外表面11c与衬套14之间，通过这样外表面16c与衬套14紧密接触；同时孔16d的表面与插头11的外表面11c接触。另外，套管16在其前端16a侧接纳固定于外部光纤中的插芯，其中外部插芯的末端与插头11的前端11a(即，耦合光纤13的端部)物理接触。
壳18固定于衬套14并且与固定外部光纤的光学连接器联接，壳18具有沿轴线Ax延伸的筒状形状并且可以由诸如不锈钢等金属制成。壳18包括前端18a、后端18b、凸缘18c和孔18d。呈从壳18的外表面突出的盘状形状的凸缘18c朝向光学器件20稍微偏移并且提供抵靠衬套14的前端14a的后端18b；因此，壳18的后端18b成为基准表面。从前端18a向后穿透壳18的孔18d具有圆形截面，该圆形截面的中央与插头11的中央以及衬套14的中央对准。壳18可以分为两个部分，即，前部分18e和后部分18f，其中这两个部分在套管16的前端处16a连接。后部分18f具有孔18d，孔18d的直径等于或稍大于前部分18e的直径(内径)并稍大于套管16的外径。因此，壳18的内表面形成有在前部分18e和后部分18f之间的台阶18g，其中，台阶18g面向套管16的前端16a。
光学器件20包括光电二极管21(PD)、盖22、透镜23、管座24、子安装座25、前置放大器26和引线端子27。可以由绝缘材料制成并具有盘状形状的管座24具有与轴线Ax交叉(优选地垂直)的主表面24a。盖22可以由金属制成并且具有筒状形状，该筒状形状具有沿轴线Ax延伸的中央，以及前端22a和后端22b。盖22的后端22b通过环形衬套29固定于管座24的主表面24a。具体地说，环形衬套29设置有前表面29a和后表面29b，其中环形衬套29的前表面29a固定于盖22，同时环形衬套29的后表面29b固定于管座24的主表面24a。盖22的前端22a通过也具有筒状形状的连接套管19安装插座10。具体地说，插座10从连接套管19的前端***连接套管19的孔内，其中衬套14的外表面14c的后部分与连接套管19的孔的表面接触。盖22的形成为平坦状的第一端22a安装连接套管19的后端，具体地说，连接套管19的后端在盖22的前端22a上可移动。盖22可以由例如作为铁和镍的合金的柯伐合金制成。
引线端子27穿透管座24并沿轴线Ax从管座24突出。PD 21和前置放大器26可以通过引线端子27与外部设备电通信。具体地说，由PD 21生成并由前置放大器26处理的信号通过引线端子27被引出，同时，通过引线端子27向PD 21和前置放大器26供应偏压。
利用树脂23a固定于盖22的内表面的透镜23是会聚透镜的类型，以将从耦合光纤13的后端13b输出的光会聚到PD 21上。为了防止光返回耦合光纤13，透镜23的光轴与耦合光纤13的轴线Ax(即，插座10的轴线)偏离，从而防止从耦合光纤13发射并且在PD 21的表面处被反射的光从耦合光纤13的后端13b再次进入耦合光纤13内。
通过透镜23与耦合光纤13的后端13b光耦合的PD 21根据从透镜提供的光的强度生成光电流。PD 21安装在由绝缘材料制成的子安装座25上。即，本实施例的PD 21通过前置放大器26和绝缘子安装座25安装在管座24上。前置放大器26可以将从PD 21提供的光电流转换为电压信号并且通过引线端子27向外输出被转换的电压信号。
图2是将管座24上的PD 21、子安装座25和前置放大器26的组件放大的剖视图。如图2所示，前置放大器26设置有顶表面26a以及后表面26b，后表面26b面向管座24的主表面24a并与座24的主表面24a接触。子安装座25也设置有顶表面25a以及后表面25b，后表面25b面向前置放大器26的顶表面26a并与前置放大器26的顶表面26a接触。PD 21设置有顶表面21a和后表面21b，其中，顶表面21a面向透镜23且接收光，并且后表面21b面向子安装座25的顶表面25a并与子安装座25的顶表面25a接触。
图3至图5分别是光学器件20的主表面24a、前置放大器26的顶表面26a以及子安装座25的顶表面25a的俯视图，其中图3移除了盖22以示出管座24的主表面24a。管座24的主表面24a设置有接地图案24b，接地图案24b经由过孔电连接至设置于管座24的后表面的接地线，其中，接地线连接至提供接地的一个或多个引线端子。管座24还在主表面24a的外周设置有引线端子27a至27f。
如图4所示，具有由横向侧(横向边)26c和26d以及纵向侧(纵向边)26e和26f划定的矩形平面形状的前置放大器26的顶表面26a中设置有焊盘28。沿横向侧中的一个26c布置的三个焊盘28a至28c与PD 21电连接，具体地说，两个焊盘28a和28c与PD 21的阴极连接，同时焊盘28b与PD 21的阳极连接，以从PD 21接收光电流。因此，与PD 21连接的这些焊盘28a至28c可以被称为信号焊盘。
布置在纵向侧26e处的焊盘28d通过引线端子27d接收来自接收器光学组件1A的输出的要提供给PD 21的偏压。具体地说，参考图3，焊盘28d与安装在接地图案24b上的电容器41引线键合，并且电容器41与引线端子27d引线键合。可以是具有顶表面和后表面的贴片式电容器类型的电容器41经由导电粘合剂(通常为导电树脂)安装在接地图案24b上。沿纵向侧26f布置的焊盘28e和28f向前置放大器26供电。这些焊盘28e和28f与同样是贴片式电容器类型的电容器42引线键合；并且电容器42与引线端子27a引线键合。电容器42也经由导电树脂安装在接地图案24b上。沿横向侧26d布置的焊盘28g和28h将从由PD 21生成的光电流转换来的电压信号引出到接收器光学组件1A的外部。如图3所示，焊盘28g与引线端子27e引线键合，并且其它焊盘28h与引线端子27f引线键合。
限定接地的焊盘28i至28n通过各个接地柱45接地至接地图案24b。另外，前置放大器26设置有用于检测光电流以及调节前置放大器26的增益的一些焊盘28。
子安装座25也具有由横向侧25c和25d以及纵向侧25e和25f划定的矩形平面形状，其中，子安装座25的纵向侧25e和25f与前置放大器26的纵向侧26e和26f对准且平行。子安装座25的面积大于前置放大器26的面积的一半。由图5所示的虚线限定的方形框架D1表示要安装PD 21的区域。
子安装座25的顶表面25a设置有与PD 21连接的第一至第三互连部31至33，其中第一至第三互连部31至33沿纵向延伸并依此顺序沿横向方向布置；即，第二互联部32被置于第一互连部31与第三互连部33之间。第一至第三互连部31至33的各自的一端与用于安装PD21的区域重叠。具体地说，互联部32的端焊盘32b以及其它两个互连部31和33的各自的端焊盘31b和33b经由导电树脂分别与设置在PD 21的后表面21b中的焊盘连接。互连部31至33各自还设置有布置在子安装座25的横向侧25c的其它端焊盘31a至33a，并且其它端焊盘31a至33a之间具有例如50μm的间隙。如图3所示，焊盘31a至33a通过对应的接合线与前置放大器26的信号焊盘28a至28c引线键合。因此，互连部31至33将焊盘28b与PD21的一个电极连接，并且将焊盘28a和28c与PD 21的其它电极连接。
子安装座25还设置有另一互联部34，另一互联部34在子安装座25的顶表面25a上，并在互连部31至33与横向侧25d之间且留出区域35以防止导电树脂扩散。区域35与用于安装PD 21的区域部分重叠。互联部34安装有电容器，其中图5所示的方形框架D2表示要安装贴片式电容器的区域。因此，该电容器的背部电极直接与互联部34连接，同时，该电容器的顶部电极与前置放大器26的信号焊盘28k至28o中的一个连接。
图3和图5示出了插座10的轴线Ax，轴线Ax与管座24的中央或盖22的中央稍微偏离。本实施例使前置放大器26的信号焊盘28a至28c以及子安装座25中的焊盘31a至33a相对于PD 21的中央O布置在轴线Ax的相反侧。即，插座10的轴线Ax布置在信号焊盘28a至28c和焊盘31a至33a与PD 21的中央O之间。轴线Ax相对于PD 21的中央O沿子安装座25的纵向的距离为约200μm。互连部31和33具有沿子安装座25的纵向的长度，该长度长于子安装座25的纵向长度的四分之一，优选地长于子安装座25的纵向长度的一半。
将对根据本发明的实施例的接收器光学组件1A的优点进行说明。图20和图21是常规接收器光学组件100和200中的管座24的俯视图。在这些接收器光学组件100和200中，子安装座125与前置放大器26并排布置，即，PD 21安装在子安装座125上，但子安装座125直接安装在管座24的接地图案24b上而不是前置放大器26上。子安装座125还设置有与其顶表面上的PD 21电连接的互连部131至133，但这些互联部131至133的长度短于本实施例的互连部31至33的长度。
当前置放大器26如图20所示的常规接收器光学组件100那样相对于管座24的主表面24a的面积具有足够小的面积时，PD 21可以布置为更靠近插座10的Ax并且前置放大器26可以布置为更靠近PD 21，即，更靠近子安装座125以缩短将子安装座125与前置放大器26连接起来的接合线的长度。然而，在用于图21所示的另一接收器光学组件200的管座24上的布置中，当前置放大器26的平面尺寸增大时，子安装座125变得很难或基本不可能安装为足够靠近前置放大器26的信号焊盘28a至28c，这不可避免地增加了将子安装座125与前置放大器26连接起来的接合线的长度。此外，PD 21或子安装座125也变得不可能布置为靠近插座10的轴线Ax。
在本实施例的接收器光学组件1A中，其上安装有PD 21的子安装座25安装在前置放大器26上，这增大了通过子安装座25布置PD 21的自由度，并且能将PD 21布置为更靠近轴线Ax。
然而，在将图20和图21所示的子安装座125安装在前置放大器26上时，通常不能缩短将子安装座125与前置放大器26的信号焊盘28a至28c连接起来的接合线。当要与前置放大器26的焊盘连接的子安装座125布置在前置放大器26上从而缩短将子安装座125和前置放大器26连接起来的接合线的长度时，子安装座125在前置放大器26上的位置相对于前置放大器26的信号焊盘28a至28c的位置受到限制。因此，本实施例的子安装座25上设置有互连部31至33，这可以增加前置放大器26的信号焊盘28a至28c与PD 21之间的距离，并且子安装座25可以可选地布置在前置放大器26上。此外，本实施例的接收器光学组件1A使前置放大器26的信号焊盘28a至28c以及子安装座25上的焊盘31a至33a相对于PD 21的中央O布置在轴线Ax的相反侧。即使在与管座24的主表面24a的面积相比前置放大器26的尺寸足够大时，该布置也能使PD 21布置在与轴线Ax偏离的位置。
子安装座25的面积可以大于前置放大器26的面积的一半，这也可以使PD 21在与插座10的轴线Ax稍微偏离的位置处可选地安装在前置放大器26上。
另外，设置在子安装座25的顶表面25a上的互连部31至33优选地具有长于子安装座25的纵向侧的四分之一的长度，这能够使PD21可选地安装在前置放大器26上以与插座10的轴线Ax稍微偏离。
第一变型例
图6是示出根据前述子安装座25而变型的另一子安装座25A的顶表面25a的俯视图。变型的子安装座25A具有区别于前述子安装座25的特征：变型的子安装座25A去除了前述子安装座25中的互连部31至34中的第三互联部33。因此，PD 21仅通过两个互连部31和32以及联接至这两个互联部的接合线与前置放大器26连接。与图5所示的前述布置相比，在图6所示的布置中，可以使焊盘31a和32a之间的间隙加宽。
第二变型例
图7是示出又一子安装座25B的顶表面25a的俯视图，并且图8是示出管座24的主表面24a的俯视图。变型的子安装座25B具有区别于前述子安装座25和25A的特征：子安装座25B设置有替代沿纵向侧25e延伸的互连部33中的一个的另一互联部36；即，互连部31、32和36沿横向侧25c并排布置，并且互联部36沿纵向侧25e延伸。
互联部36除了布置在子安装座25B的横向侧25c的焊盘36a外还包括在互联部36的邻近互联部34的一端中的焊盘36b。如图8所示，焊盘36b与前置放大器26的焊盘28中除上述焊盘28a至28k以外的一个焊盘引线键合。与焊盘36b引线键合的焊盘28是前置放大器26的偏压焊盘中的一个。
互联部36的焊盘36a直接与引线端子27c引线键合。因此，引线端子27c可以与PD21以及前置放大器26的偏压焊盘28电连接。当接收器光学组件1A应用变型的子安装座25B以替代图5所示的子安装座25时，PD 21可以在前置放大器26上与插座10的轴线Ax偏离的位置可选地布置。另外，可以缩短将子安装座25B的偏压焊盘36b与前置放大器26的偏压焊盘28连接起来的接合线的长度。图19是示出当PD 21通过第一变型例的子安装座25A安装在前置放大器26上但前置放大器26的偏压焊盘28通过两个电容器62与引线端子27c连接时管座24的主表面24a的俯视图。因此，本变型例的子安装座25B上的互联部36的布置使接合线的布置相当地简单。
第二实施例
接下来，将参考图9至图14描述组装接收器光学组件1A的方法，其中，图9至图11以及图13通过管座24的主表面24a的各个俯视图示出了该方法的步骤，图12A和图12B分别是管座24、前置放大器26、子安装座25和PD 21的组件的沿均在图11中示出的线XIIa-XIIa和XIIb-XIIb截取的剖视图；并且图14是该组件的沿图13中示出的线XIV-XIV截取的剖视图。
参考图9，该方法首先将前置放大器26以及包括电容器41至44的无源部件安装在管座24的主表面24a上。前置放大器26的后表面26b面向并接触管座24的主表面24a。顶表面26a和顶表面26a上的焊盘28露出。包括电容器41至44的无源部件优选地在安装前置放大器26之后安装在管座24的主表面24a上，然而安装的顺序是可选的。
然后，如图10所示，将一些焊盘28与管座24上的无源部件引线键合。具体地说，将前置放大器26的沿纵向侧26e和26f布置的焊盘28与无源部件引线键合；即，将焊盘28d与电容器41引线键合，将焊盘28e和28f与电容器42引线键合，将焊盘28g与电容器44引线键合，并且将焊盘28h与电容器43引线键合。另外，将焊盘28i和28j分别与引线端子27e和27f引线键合。焊盘28k至28o与对应的接地柱45连接，接地柱45是直接安装在接地图案24b上的金属柱。另外，电容器41至44分别与引线端子27d、27a、27c和27b引线键合。
然后，如图11所示，该方法将其上安装有PD 21的子安装座25安装在前置放大器26上。子安装座25的后表面25b面向并接触前置放大器26的顶表面26a。如上文所述，前置放大器26的焊盘28在其顶表面26a上露出，但相对于子安装座25的侧部25c至25f具有对应的距离。例如，沿子安装座25的横向侧25c布置并与子安装座25的焊盘31a至33a引线键合的信号焊盘28a至28c相对于子安装座25的横向侧25c的距离大于焊盘28d至28h与子安装座25的纵向侧25e和25f的距离，焊盘28d至28h与安装在管座24的主表面24a上的无源部件引线键合。具体地说，参考图12A和图12B，其中，图12A示出了子安装座25沿包括纵向侧25f的侧部25g的布置，同时图12B示出了沿包括横向侧25c的侧部25h的布置，从焊盘28h到侧部25g的前者距离S1短于从焊盘28a到侧部25h的后者距离S2。距离S2优选为距离S1的至少两倍。本实施例将信号焊盘28a至28c与横向侧25c或25h之间的距离S2设定为200至240μm。
如图12A和图12B所示，该方法利用紫外光可固化树脂型粘合剂51将子安装座25安装在前置放大器26上。这种粘合剂在紫外线照射之前是流体材料。因此，在利用粘合剂将子安装座25放置在前置放大器26上时，过剩的粘合剂可能扩散到前置放大器26的顶表面26a上。由于信号焊盘28a至28c与侧部25h之间的后者距离S2大于前置放大器26的沿纵向侧26e和26f布置的焊盘28与子安装座25的侧部25g之间的前者距离S1，因此信号焊盘28a至28c不受粘合剂51影响。
然后，如图13所示，该方法实施信号焊盘28a至28c与子安装座25上的焊盘31a至33a之间的引线键合，图14示出了其剖视图。因此，PD 21可以通过前置放大器26和子安装座25安装在管座24上并且与前置放大器26引线键合。然后，将固定透镜23的盖22与管座24组装在一起，完成形成光学器件20的过程。在通过连接套管19使插座10与PD 21光学对准之后，将光学器件20与插座10组装在一起，完成接收器光学组件1A。
如此描述的接收器光学组件1A将PD 21隔着子安装座25安装在前置放大器26上。即使在接收器光学组件1A需要采用具有大尺寸的前置放大器26时，PD 21和前置放大器26的该布置也增强了将PD 21安装在管座24上的灵活性。因此，PD 21可以放置为更靠近插座10的轴线Ax但与插座10的轴线Ax稍微偏移。另外，组装接收器光学组件1A的方法首先实施除了信号焊盘28a至28c之外的焊盘与预先安装在管座24上的无源部件之间的引线键合，以将具有PD21的子安装座25安装在前置放大器26上，并且子安装座25与前置放大器26之间置有粘合剂。即使当过剩的粘合剂扩散到前置放大器26的除信号焊盘28a至28c之外的焊盘上时，也已完成对这些焊盘的布线。因此，除信号焊盘28a至28c之外的焊盘可以与管座24上的无源部件牢固地连接。
在子安装座25和前置放大器26的本实施例中，在将子安装座25安装在前置放大器26上之后需要引线键合的信号焊盘28a至28c相对于子安装座25的侧部25h具有较大距离。因此，信号焊盘28a至28c由于前置放大器26与子安装座25之间的间隙而变得基本不受朝向信号焊盘28a至28c扩散的过剩粘合剂的影响。
另外，本发明的子安装座25的顶表面25a上设置有互连部31至33，这些互连部31至33的长度长于子安装座25的纵向长度的四分之一或优选地一半，这确保了前置放大器26的信号焊盘28a至28c与PD 21之间的距离。因此，PD 21可以可选地布置在前置放大器26上而不依赖(独立于)信号焊盘28a至28c的位置。前置放大器26的信号焊盘28a至28c以及子安装座25上的焊盘31a至33a可以相对于PD 21的中央O布置在插座10的轴线Ax的相反侧，这使得即使当前置放大器26占据管座24的主表面24a的更大部分时，PD 21也能布置在与插座10的轴线Ax偏离的位置。
接下来，将对组装接收器光学组件的方法的一些变型例进行描述。
第三变型例
图15是与图14所示的信号焊盘和子安装座对应的根据第三变型例的信号焊盘28a至28c以及子安装座25C的剖视图。本变型例的子安装座25C具有这样的特征：面向前置放大器的26的信号焊盘28a至28c的至少侧部25h倾斜或形成悬突部分。具体地说，子安装座25C形成有在侧部25h与顶表面25a之间的锐角θ1，同时形成有在侧部25h与底表面25b之间的钝角θ2。因此，底表面25b中的边缘25i到信号焊盘28a至28c的距离为距离S3，距离S3是侧部25h到信号焊盘28a至28c的最大距离。由于粘合剂51的表面张力，具有负斜率的侧部25h可以抑制粘合剂51与侧部25h分离。因此，即使当以上限定的距离S3短于图12A所示的子安装座25的侧部25g与除了信号焊盘28a至28c之外的焊盘之间的距离S1，也可以抑制粘合剂51朝向信号焊盘28a至28c扩散。
第四变型例
图16是前置放大器26的信号焊盘28a至28c附近的子安装座25和前置放大器26的剖视图。如图16所示，本变型例设置有信号焊盘28a，信号焊盘28a包括形成在前置放大器26的顶表面26a上的金属图案61以及堆叠在金属图案61上的导电柱62。柱62可以是使用球形焊接器(ball bonder)形成的金凸点(金凸块)。柱62可以是焊料凸点(焊料凸块)。信号焊盘28a的高度优选为大于20μm且小于50μm，该高度至少高于粘合剂51的厚度，或高于形成在子安装座25与前置放大器26之间的间隙的厚度。可以在用于形成前置放大器26的过程中形成柱62。其它信号焊盘28b和28c可以具有图16所示的结构。由于信号焊盘28a的柱62a的顶部从扩散的粘合剂51中露出，因此即使在过剩的粘合剂51从子安装座25与前置放大器26之间的间隙扩散时也可以进行与信号焊盘28a的引线键合。另外，信号焊盘28a至28c相对于子安装座25的侧部25h的距离可以大于除了信号焊盘28a至28c之外的焊盘与子安装座25的纵向侧25e或25f之间的距离S1。
第五变型例
图17A是第五变型例的信号焊盘28a和子安装座25附近的剖视图。图17A所示的布置具有这样的特征：信号焊盘28a包括在前置放大器26的主表面26a上的金属图案61和堆叠在金属图案61上的柱62A，其中柱62A通过例如倒装芯片结合(flip-chip bonding)而具有中继部件的功能。柱62A包括具有矩形块71的基体、埋置于矩形块71内的通路金属72以及焊盘73，焊盘73设置在矩形块71的顶表面71a上并通过通路金属72与金属图案61电连接。通路金属72的各端从矩形块71露出，通路金属72的一端与金属图案61接触，并且通路金属72的另一端与焊盘73接触。具有矩形平面形状的焊盘73通过接合线W2与子安装座25上的焊盘31a至33a引线键合。柱62A表现出了在图16中所示的前述变型例中的柱62的功能；即，通路金属72提供了与柱62相同的功能，但通路金属72被由绝缘材料制成的矩形块71包围。本变型例的焊盘28a与子安装座25的侧部25h之间的距离可以短于除了信号焊盘28a至28c之外的焊盘与子安装座25的纵向侧25e或25f之间的距离S1。
图17B是柱62A的透视图，并且图17C是其俯视图。如图17B和图17C所示，矩形块71设置有通路金属72和焊盘73，通路金属72与信号焊盘28a至28c中的金属图案61接触。通路金属72具有圆形截面，该圆形截面的直径优选为0.1mm，并且通路金属72的跨度也优选为0.1mm。在替代方案中，通路金属72可以具有矩形截面，该矩形截面具有例如0.15mm的边长。由于信号焊盘28a至28c设置有具有相当高度的矩形块71，因此信号焊盘28a至28c的顶部高度高于前述变型例的信号焊盘的顶部高度，具体地说，信号焊盘28a至28c的顶部高度与子安装座25的高度相当，这可以缩短从信号焊盘28a至28c牵引到子安装座25中的信号焊盘31a至33a的接合线W2的长度。
第六变型例
图18A是信号焊盘28a至28c的剖视图，并且图18B是信号焊盘28a至28c中的变型的柱62B的透视图。信号焊盘28a至28c分别设置有金属图案61以及堆叠在金属图案61上的变型的柱62B。柱62B包括矩形块71A和金属图案72A，金属图案72A形成在矩形块71A的表面上并与金属图案61电连接。金属图案72A完全露出在矩形块71A的包括顶部71a、侧部71b和底部71c的表面上，其中金属图案72A在底部71c中的一端与信号焊盘28a至28c中的金属图案61物理接触和电接触，同时，金属图案72A的其它端利用接合线W2与子安装座25中的信号焊盘31a至33a引线键合。由于本变型例的信号焊盘28a至28c的顶部高度(确切地说，柱62B的顶部高度)大致等于子安装座25的顶部高度，因此可以缩短接合线W2的长度。另外，由于柱62B在其表面中设置有金属图案72A而不是如前述变型例那样在内部设置金属图案，因此可以简单地形成金属图案72A。
根据本发明的接收器光学组件及其组装方法不受如此描述的实施例及其变型例的限制，并且可以包括进一步的改变和/或修改。例如，本发明可以根据目的和功能来结合实施例以及修改或改变。例如，子安装座25的侧部25h形成为具有负斜率的部分或悬突部分，并且确保相对于前置放大器26的信号焊盘28a至28c的足够距离S2，这可以进一步防止粘合剂51扩散到信号焊盘28a至28c上。因此，本发明具有其要求保护的范围，并且包括在该范围及其等同内容中所记载的对元件的全部修改和改变。
本申请要求于2017年10月27日提交的日本申请JP2017-208479和2018年3月22日提交的日本申请JP2018-054404的优先权，这些日本申请的全部公开内容以引用的方式并入本文。

Claims (13)

1.一种接收器光学组件，其接收光信号并生成与所述光信号对应的电信号，所述接收器光学组件包括：
光电二极管，即PD，其接收所述光信号并生成与所述光信号对应的光电流；
子安装座，其由绝缘材料制成，所述子安装座上安装有所述PD并且设置有输送所述光电流的互连部；
前置放大器，其通过接收所述光电流而生成所述电信号，利用粘合剂在所述前置放大器上安装带有所述PD的所述子安装座，并且所述前置放大器具有信号焊盘和其它焊盘，所述信号焊盘与所述子安装座的所述互连部电连接；以及
管座，其上安装有带有所述子安装座和所述PD的所述前置放大器，所述管座设置有与所述前置放大器电连接的引线端子，所述电信号通过所述引线端子向外输出，
其中，所述前置放大器的所述信号焊盘相对于所述子安装座的距离大于从所述前置放大器的所述其它焊盘到所述子安装座的距离。
2.根据权利要求1所述的接收器光学组件，
还包括插座，所述插座具有轴线并且接纳外部光纤，所述外部光纤提供所述光信号并且沿所述插座的所述轴线被固定在所述插座中，
其中，所述前置放大器上的所述PD具有相对于所述插座的所述轴线偏离的光轴。
3.根据权利要求2所述的接收器光学组件，
其中，所述子安装座在所述互连部的端部之一中设置有信号焊盘，所述子安装座的信号焊盘与所述前置放大器的信号焊盘引线键合，并且
所述子安装座的信号焊盘与所述前置放大器的信号焊盘相对于所述PD的所述光轴布置在所述插座的所述轴线的相反侧。
4.根据权利要求1所述的接收器光学组件，
其中，所述前置放大器的所述信号焊盘包括所述前置放大器上的金属图案和所述金属图案上的柱，并且
所述柱是金凸点或焊料凸点，所述金凸点的顶部或所述焊料凸点的顶部与所述子安装座的信号焊盘引线键合。
5.根据权利要求1所述的接收器光学组件，
其中，所述前置放大器的所述信号焊盘包括所述前置放大器上的金属图案和所述金属图案上的柱，并且
所述柱具有矩形块，所述矩形块具有填充有金属的通孔，所述通孔的一端与所述前置放大器上的所述金属图案电连接，并且所述通孔的另一端与所述子安装座上的所述互连部引线键合。
6.根据权利要求1所述的接收器光学组件，
其中，所述前置放大器的所述信号焊盘包括所述前置放大器上的金属图案和所述金属图案上的柱，并且
所述柱具有矩形块，所述矩形块包括在所述矩形块的顶表面、侧表面和底表面上的金属图案，所述顶表面上的金属图案与所述子安装座上的所述互连部引线键合，所述底表面上的金属图案与所述前置放大器的所述信号焊盘的金属图案物理固定并电连接。
7.根据权利要求1所述的接收器光学组件，
其中，所述子安装座设置有面向所述前置放大器的所述信号焊盘的侧部，所述侧部具有相对于所述子安装座的顶表面成锐角并且相对于所述子安装座的底表面成钝角的悬突部分。
8.一种组装接收器光学组件的方法，包括以下步骤：
将前置放大器和电容器安装在设置有引线端子的管座上；
使所述前置放大器和所述电容器与所述引线端子引线键合；
利用粘合剂将安装于子安装座上的光电二极管即PD安装在所述前置放大器上，所述子安装座具有与所述PD电连接的互连部；以及
使所述子安装座上的所述互连部与所述前置放大器引线键合。
9.根据权利要求8所述的方法，
其中，所述前置放大器具有矩形平面形状，所述矩形平面形状具有纵向侧和横向侧，所述前置放大器具有沿所述横向侧中的一侧的信号焊盘以及沿所述纵向侧的焊盘，所述前置放大器的沿所述纵向侧设置的焊盘相对于所述子安装座的距离小于沿所述前置放大器的所述横向侧中的一侧设置的所述信号焊盘相对于所述子安装座的距离，
使所述前置放大器与所述引线端子引线键合的步骤将沿所述纵向侧设置的焊盘与所述引线端子引线键合，并且
使所述前置放大器与所述子安装座的所述互连部引线键合的步骤将所述前置放大器的沿着所述横向侧中的一侧设置的所述信号焊盘与所述子安装座的所述互连部引线键合。
10.根据权利要求9所述的方法，
其中，所述子安装座具有面向所述前置放大器的所述信号焊盘的侧部，所述侧部具有相对于所述子安装座的顶表面成锐角并且相对于所述子安装座的底表面成钝角的悬突部分。
11.根据权利要求9所述的方法，
其中，所述前置放大器的所述信号焊盘包括金属图案和设置在所述金属图案上的金凸点或焊料凸点，并且
使所述前置放大器与所述互连部引线键合的步骤将所述金凸点或所述焊料凸点与所述互连部引线键合。
12.根据权利要求9所述的方法，
其中，所述前置放大器的所述信号焊盘包括金属图案和设置在所述金属图案上的柱，所述柱包括填充有通路金属的通孔，所述通路金属的一端与所述金属图案物理固定并电连接，并且
使所述前置放大器与所述互连部引线键合的步骤将所述通路金属的另一端与所述互连部引线键合。
13.根据权利要求9所述的方法，
其中，所述前置放大器的所述信号焊盘包括金属图案和设置在所述金属图案上的柱，所述柱包括其顶表面、侧表面和底表面上的互连部，所述底表面上的互连部与所述金属图案物理固定并电连接，并且
使所述前置放大器与所述互连部引线键合的步骤将所述柱的所述顶表面上的互连部与所述子安装座的互连部引线键合。
CN201811251719.7A 2017-10-27 2018-10-25 接收器光学组件及其组装方法 Active CN109725391B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017-208479 2017-10-27
JP2017208479A JP2019083228A (ja) 2017-10-27 2017-10-27 受光モジュール
JP2018054404A JP7004304B2 (ja) 2018-03-22 2018-03-22 受光モジュールの製造方法
JP2018-054404 2018-03-22

Publications (2)

Publication Number Publication Date
CN109725391A CN109725391A (zh) 2019-05-07
CN109725391B true CN109725391B (zh) 2022-03-01

Family

ID=66244330

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811251719.7A Active CN109725391B (zh) 2017-10-27 2018-10-25 接收器光学组件及其组装方法

Country Status (2)

Country Link
US (2) US10734369B2 (zh)
CN (1) CN109725391B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109725391B (zh) * 2017-10-27 2022-03-01 住友电工光电子器件创新株式会社 接收器光学组件及其组装方法
WO2020100283A1 (ja) * 2018-11-16 2020-05-22 三菱電機株式会社 受光モジュール
WO2020250345A1 (ja) * 2019-06-12 2020-12-17 三菱電機株式会社 光受信モジュール

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187607A (ja) * 1997-09-01 1999-03-30 Sumitomo Electric Ind Ltd 光モジュール
JP2004055848A (ja) * 2002-07-19 2004-02-19 Matsushita Electric Works Ltd チップ間端子接続方法及びそれを用いて作製した回路基板とそれを具備する火災感知器
JP2004254125A (ja) * 2003-02-20 2004-09-09 Sumitomo Electric Ind Ltd 光受信モジュール
JP2005294429A (ja) * 2004-03-31 2005-10-20 Murata Mfg Co Ltd 光受信モジュール

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9000027A (nl) * 1990-01-05 1991-08-01 Philips Nv Opto-elektronische inrichting met een, een lens omvattende koppeling tussen een optische transmissievezel en een halfgeleiderlaserdiode.
JP3623144B2 (ja) 1994-05-16 2005-02-23 住友電気工業株式会社 光受信モジュ−ル
JP2002359426A (ja) * 2001-06-01 2002-12-13 Hitachi Ltd 光モジュール及び光通信システム
JP2004088046A (ja) * 2002-06-25 2004-03-18 Sumitomo Electric Ind Ltd 光受信器及びその製造方法
KR100575950B1 (ko) * 2003-06-20 2006-05-02 삼성전자주식회사 티오 캔 구조의 광수신 모듈
US20070006923A1 (en) * 2003-09-26 2007-01-11 Smith John W Adjustable inlet valve with air gap
JP2007096079A (ja) * 2005-09-29 2007-04-12 Stanley Electric Co Ltd 半導体発光装置
US8059973B2 (en) * 2006-02-17 2011-11-15 Finisar Corporation Discrete bootstrapping in an optical receiver to prevent signal feedback
JP5135192B2 (ja) * 2008-12-11 2013-01-30 日本オクラロ株式会社 光受信モジュール及び光受信モジュールの製造方法
US8145061B2 (en) * 2009-01-13 2012-03-27 Sumitomo Electric Industries, Ltd. Optical module implementing a light-receiving device and a light-transmitting device within a common housing
JP5818673B2 (ja) * 2011-12-21 2015-11-18 日本オクラロ株式会社 光モジュール
JP2013187231A (ja) 2012-03-06 2013-09-19 Asahi Kasei Electronics Co Ltd 半導体センサ、および、その製造方法
JP6104669B2 (ja) 2013-03-28 2017-03-29 日本オクラロ株式会社 光受信モジュール
JP6558192B2 (ja) * 2015-10-01 2019-08-14 住友電気工業株式会社 光学装置
JP6834108B2 (ja) * 2016-11-25 2021-02-24 住友電工デバイス・イノベーション株式会社 電子装置組立体
CN109725391B (zh) * 2017-10-27 2022-03-01 住友电工光电子器件创新株式会社 接收器光学组件及其组装方法
CN111865429B (zh) * 2019-04-30 2022-05-27 深圳市聚飞光电股份有限公司 光电接收器及光电接收器的制作方法
CN111865433A (zh) * 2019-04-30 2020-10-30 深圳市聚飞光电股份有限公司 光电接收器及光电接收器的制作方法
CN112838899A (zh) * 2021-01-12 2021-05-25 索尔思光电（成都）有限公司 光接收组件及光模块

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187607A (ja) * 1997-09-01 1999-03-30 Sumitomo Electric Ind Ltd 光モジュール
JP2004055848A (ja) * 2002-07-19 2004-02-19 Matsushita Electric Works Ltd チップ間端子接続方法及びそれを用いて作製した回路基板とそれを具備する火災感知器
JP2004254125A (ja) * 2003-02-20 2004-09-09 Sumitomo Electric Ind Ltd 光受信モジュール
JP2005294429A (ja) * 2004-03-31 2005-10-20 Murata Mfg Co Ltd 光受信モジュール

Also Published As

Publication number Publication date
CN109725391A (zh) 2019-05-07
US10734369B2 (en) 2020-08-04
US20190131288A1 (en) 2019-05-02
US20200328199A1 (en) 2020-10-15
US11152342B2 (en) 2021-10-19

Similar Documents

Publication Publication Date Title
CN109725391B (zh) 接收器光学组件及其组装方法
US7501661B2 (en) Receiving optical subassembly with an improved high frequency performance
KR101025267B1 (ko) 일심 양방향 광 모듈
US6527458B2 (en) Compact optical transceiver integrated module using silicon optical bench
US7138661B2 (en) Optoelectronic component and optoelectronic arrangement with an optoelectronic component
JP2006507679A (ja) レンズと一体のパッケージ及びそのパッケージを組み込んだ光学的アセンブリ
JP2005094021A (ja) 一体化された光学素子およびアライメントポストを有する面発光レーザパッケージ
US7663228B2 (en) Electronic component and electronic component module
US7333684B2 (en) Stack-integrated package of optical transceiver for single core full duplex fiber communications
CN110573920B (zh) 光子组件及其制造方法
CA2362654A1 (en) Optical semiconductor module
US11482559B2 (en) Optical semiconductor device and method of assembling optical semiconductor device
JP2005191529A (ja) 反射鏡及び位置合わせポストを有する光デバイスパッケージ
JP2010078806A (ja) 光モジュール、光伝送装置及び面型光素子
US7207729B2 (en) TO-can having a leadframe
US6948863B2 (en) Optical module and optical transceiver module
JP3972677B2 (ja) 光モジュール
JP3719651B2 (ja) 多チャネル光モジュール
US10382137B2 (en) Optoelectronic device having improved optical coupling
JP2010251570A (ja) 光受信モジュール
JP3452120B2 (ja) 光モジュール及び光トランシーバ
JP7334782B2 (ja) 光電ファイバ、通信装置および光電ファイバの製造方法
JP3674019B2 (ja) 光リンク装置
JP2005284167A (ja) 光通信モジュール
CN219267662U (zh) 一种小型同轴光电探测器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant