CN109719614A - A kind of polissoir - Google Patents
A kind of polissoir Download PDFInfo
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- CN109719614A CN109719614A CN201711049908.1A CN201711049908A CN109719614A CN 109719614 A CN109719614 A CN 109719614A CN 201711049908 A CN201711049908 A CN 201711049908A CN 109719614 A CN109719614 A CN 109719614A
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Abstract
The present invention provides a kind of polissoir, comprising: catalysis grinding pad, surface includes catalyst, and is provided with the through-hole passed through for laser；First power device provides the power of period round-trip translational motion for catalysis grinding pad；Wafer fixed disk, for fixing wafer to be ground, so that wafer to be ground is contacted with the catalysis grinding pad；Second power device is connected to wafer fixed disk, provides rotary power for wafer fixed disk and wafer to be ground, and provides wafer to be ground and be catalyzed the pressure of grinding pad；And laser aid treats grinding crystal wafer surface and carries out laser treatment by being catalyzed the through-hole of grinding pad.By increasing laser aid in the polissoir, and increase can pass through the through-hole of laser in catalysis grinding pad, grinding crystal wafer surface is treated by laser to be handled, generate microdefect, the microdefect is greatly improved the catalysis reaction of catalyst, to greatly improve the grinding rate of wafer to be ground, production efficiency is improved.
Description
Technical field
The invention belongs to semiconductor manufacturing facility and method field of manufacturing, more particularly to a kind of polissoir.
Background technique
SiC material has compared with first generation semiconductor material (Ge and Si), second generation semiconductor material (GaAs, InP etc.)
There is superior characteristic, becomes third generation semiconductor material.SiC has excellent thermal conductivity simultaneously, is manufacture large scale, superelevation
The ideal substrate material of brightness white and blue light GaN LED and laser diode, become photovoltaic industry key basic material it
One.SiC semiconductor device performance with super strength and wide application prospect are paid much attention to by various countries all the time.
Ideal substrate material substrate quality requirement SiC wafer has surface ultra-smooth, not damaged, the high (Mohs of SiC hardness
Hardness 9.2~9.6) and extensive chemical stability (minimum atomic distance is 1.8A), so that it is difficult polishing, surface often goes out
Existing some scratches and damage, directly affect the quality of light emitting diode.The current developed Ultraprecise polished method of SiC wafer,
It mainly include chemical polishing, the polishing of catalyst assistant chemical, electrochemical polish, tribochemistry polishing and chemically mechanical polishing
Deng.
Chemical polishing is traditional semiconductor wafer surface processing technology, belongs to the chemical corrosion process of no abrasive grain, such as adopts
Use HNO3, HF and H2O constitutes polishing fluid and polishes to SiC crystal column surface.The polishing of catalyst assistant chemical is in chemical polishing
Using catalyst to improve SiC material removal rate, belong to no abrasive machining mode.Electrochemical polish is electrochemical oxidation and oxygen
Change layer and removes the process combined.Current density when by control polishing realizes the oxidation rate to SiC crystal column surface
It is controlled, and then improves polishing speed.Tribochemistry polishing is to make SiC wafer surface to be machined generationization using rubbing action
Learn variation, the polishing method of forming material removal.Chemically mechanical polishing be by working fluid to the chemical action of SiC crystal column surface and
Abrasive grain combines wafer surface mechanism, thus the processing method for realizing smooth not damaged surface, and in the first generation and
It is used widely in the processing of two generation semiconductor materials.
Traditional SiC polishing wafer equipment grinding rate is told somebody what one's real intentions are, usually in 10 μm/h or so, need to SiC wafer into
The more thickness of row it is thinned when, production efficiency can be seriously affected, be based on this, providing one kind can effectively improve SiC grinding wafer
The polissoir of rate is necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of polissoirs, for solving
SiC polishing wafer equipment is easy to lead to the problem of defect or crackle in SiC wafer in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of polissoir, and the polissoir includes:
It is catalyzed grinding pad, surface includes catalyst, and the catalysis grinding pad is provided with the through-hole passed through for laser；First power
Device is connected to the catalysis grinding pad, and provides the week for being parallel to the catalysis grinding pad plane for the catalysis grinding pad
The power of phase round-trip translational motion；Wafer fixed disk, for fixing wafer to be ground, so that the wafer to be ground is urged with described
Change grinding pad contact；Second power device is connected to the wafer fixed disk, is the wafer fixed disk and the crystalline substance to be ground
Circle provides rotary power, and provides the pressure of the wafer to be ground and the catalysis grinding pad；And laser aid, it is set to
Below the catalysis grinding pad, by the through-hole of the catalysis grinding pad, laser treatment is carried out to the crystal column surface to be ground.
Preferably, the polissoir further includes a fluid circulation system, comprising: accommodation groove is surrounded on the catalysis and grinds
Mill pad, and reaction liquid is provided for the catalysis grinding pad；Feeding device, for providing reaction liquid for the accommodation groove；With
And pumping equipment, for the reaction liquid in the accommodation groove to be discharged.
Further, the reaction liquid that the feeding device provides includes water (H2) or hydrogen peroxide (H O2O2) it is water-soluble
Liquid.
Preferably, the catalyst includes platinum (Pt), palladium (Pd), ruthenium (Ru), nickel (Ni), cobalt (Co), chromium (Cr) and molybdenum
(Mo) combination of one or more of group composed by.
Preferably, the wafer to be ground includes one of silicon carbide (SiC) wafer and gallium nitride (GaN) wafer.
Preferably, second power device provides the wafer to be ground and the pressure limit for being catalyzed grinding pad is
500hpa~2000hpa.
Preferably, it is little that second power device, which provides the wafer fixed disk and the revolving speed of the wafer to be ground,
In 30rpm.
Preferably, first power device controls total movement of the catalysis round-trip translational motion a cycle of grinding pad
Distance is no more than the brilliant diameter of a circle to be ground.
Further, the through-hole is correspondingly arranged in the central region of the wafer initial position to be ground, so that described
Catalysis grinding pad can be irradiated with a laser always in period round-trip translational motion.
Preferably, the number of openings of the catalysis grinding pad setting is 3 not small, and the laser aid is simultaneously all
The through-hole provides laser simultaneously and exposes to the wafer to be ground.
Preferably, the speed of the catalysis round-trip translational motion of grinding pad is no more than 5cm/sec.
Preferably, the laser aid includes AlGaN base laser.
Preferably, the laser that the laser aid provides is Linear Laser.
Preferably, the laser wavelength range that the laser aid provides is 222nm~261nm, and the power bracket of laser is
10mW~40mW.
As described above, polissoir of the invention, has the advantages that
The present invention is by providing a kind of polissoir, by increasing laser aid in the polissoir, and is being catalyzed
Grinding crystal wafer surface can be treated by laser and be handled by the through-hole of laser by increasing in grinding pad, generate microdefect, this is micro-
The catalysis reaction that defect is greatly improved catalyst improves production efficiency to greatly improve the grinding rate of wafer to be ground,
Polissoir through the invention, the grinding rate of SiC wafer is up to 20 μm/h or more.Structure of the invention is simple, can be significantly
The grinding efficiency for improving SiC wafer, is with a wide range of applications in field of semiconductor manufacture.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of polissoir of the invention.
Fig. 2 is shown as the structural schematic diagram of the through-hole in the catalysis grinding pad of this polissoir.
Component label instructions
101 catalysis grinding pads
102 first power devices
103 wafer fixed disks
104 second power devices
105 wafers to be ground
106 accommodation grooves
107 laser aids
108 through-holes
109 feeding devices
110 pumping equipments
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to FIG. 1 to FIG. 2.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in diagram then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
As shown in FIG. 1 to FIG. 2, the present embodiment provides a kind of polissoir, the polissoir includes: catalysis grinding pad
101, the first power device 102, wafer fixed disk 103, wafer to be ground 105, the second power device 104, laser aid 107,
Through-hole 108 or fluid circulation system.
101 surface of catalysis grinding pad includes catalyst, the catalyst include platinum (Pt), palladium (Pd), ruthenium (Ru),
The combination of one or more of group composed by nickel (Ni), cobalt (Co), chromium (Cr) and molybdenum (Mo).In the present embodiment,
It is platinum (Pt) that the catalyst, which is selected, and the Catalyst Design is continuous planar structure, and area is ground equal to the catalysis
The area of pad 101.
First power device 102 is connected to the catalysis grinding pad 101, and provides for the catalysis grinding pad 101
It is parallel to the power of the period round-trip translational motion of catalysis 101 plane of grinding pad, as shown in figure 1, the catalysis grinding pad 101
It can be translated back and forth perpendicular to paper.
As an example, first power device 102 controls the round-trip translational motion a cycle of the catalysis grinding pad 101
Total moving distance be no more than the wafer 105 to be ground diameter.In the present embodiment, first power device 102
The total moving distance for controlling the catalysis round-trip translational motion a cycle of grinding pad 101 is the straight of the wafer 105 to be ground
3/4ths of diameter.
As an example, the through-hole 108 is correspondingly arranged in the central region of 105 initial position of wafer to be ground, make
The catalysis grinding pad 101 period round-trip translational motion the middle most of the time or always can be irradiated with a laser.
As an example, the speed of the catalysis round-trip translational motion of grinding pad 101 is no more than 5cm/sec.In this implementation
In example, the speed of the catalysis round-trip translational motion of grinding pad 101 is 3cm/sec.
The wafer fixed disk 103 is for fixing wafer 105 to be ground, so that the wafer to be ground 105 is urged with described
Change grinding pad 101 to contact.
Second power device 104 is connected to the wafer fixed disk 103, is the wafer fixed disk 103 and described
Wafer 105 to be ground provides rotary power, and provides the pressure of the wafer to be ground 105 with the catalysis grinding pad 101.
As an example, the wafer to be ground 105 includes one in silicon carbide (SiC) wafer and gallium nitride (GaN) wafer
Kind.In the present embodiment, it is silicon carbide (SiC) wafer that the wafer to be ground 105, which is selected,.
As an example, second power device 104 provides the wafer to be ground 105 and the catalysis grinding pad 101
Pressure limit be 500hpa~2000hpa.For example, the pressure of the wafer to be ground 105 and the catalysis grinding pad 101 can
To select as 500hpa, 800hpa, 1000hpa, 1500hpa, 2000hpa etc., in the present embodiment, the wafer to be ground
105 with it is described catalysis grinding pad 101 pressure limit select be 500hpa~1000hpa, this range can guarantee described to be ground
The polishing speed of wafer 105, while excessively high pressure being avoided to cause increase or the sliver of 105 internal stress of wafer to be ground.
As an example, the wafer fixed disk 103 and the wafer to be ground 105 can keep court during grinding
Same direction rotation.Second power device 104 provides turn of the wafer fixed disk 103 and the wafer to be ground 105
Speed is no more than 30rpm.
The laser aid 107 is set to 101 lower section of catalysis grinding pad, passes through the logical of the catalysis grinding pad 101
Hole 108 carries out laser treatment to 105 surface of wafer to be ground.The laser aid 107 can shine continuously to provide laser
It penetrates or interval provides laser irradiation, when interval provides laser irradiation, the time of a laser irradiation can be 10~60sec,
The time having a rest can be 5sec~60sec.
As shown in Fig. 2, as an example, 108 quantity of through-hole that the catalysis grinding pad 101 is arranged is 3 not small and described
Laser aid 107 provides laser and exposes to the wafer to be ground 105 simultaneously for all through-holes 108 simultaneously.Specifically,
It is described catalysis grinding pad 101 be arranged 108 quantity of through-hole be can be 3,4,5,6 etc..
As an example, the laser aid 107 is selected as AlGaN base laser wherein, what the laser aid 107 provided
Laser is Linear Laser.
As an example, the laser wavelength range that the laser aid 107 provides is 222nm~261nm, the power model of laser
It encloses for 10mW~40mW.Specifically, the optical maser wavelength that the laser aid 107 provides can be 222nm or 261nm etc., described
The power bracket of laser be can be 10mW, 20mW, 30mW, 40mW etc..
As shown in Figure 1, the fluid circulation system includes: accommodation groove 106, it is surrounded on the catalysis grinding pad 101, and be
101 reaction liquid of catalysis grinding pad；Feeding device 109, for providing reaction liquid for the accommodation groove 106；And row
Liquid device 110, for the reaction liquid in the accommodation groove 106 to be discharged.As an example, what the feeding device 109 provided
Reaction liquid includes water (H2) or hydrogen peroxide (H O2O2) aqueous solution.When polishing progress, the reaction liquid preferably soaks
Do not have 101 surface of catalysis grinding pad.
In grinding, the wafer fixed disk 103 and the wafer to be ground 105 is made to keep preset rotation speed, make it is described to
Grinding crystal wafer 105 and the catalysis grinding pad 101 keep preset pressure, and Xiang Suoshu accommodation groove 106 injects reaction liquid to submergence
101 surface of catalysis grinding pad.
Then, laser aid 107 is opened, laser photograph is carried out to 105 surface of wafer to be ground by the through-hole 108
It penetrates, and the catalysis grinding pad 101 is made to be parallel to the period round-trip translational motion for being catalyzed 101 plane of grinding pad, by swashing
Light is treated 105 surface of grinding crystal wafer and is handled, and microdefect is generated, which is greatly improved the catalysis reaction of catalyst,
Under the catalysis that laser aid 107 provides laser and catalyst Pt, SiC crystal column surface occurs following reaction and makes its surface
SiC be removed:
H2O→H++OH-
SiC+OH-→Si(OH)4↓+CO,CO2↑
When the wafer to be ground 105 is close to target thickness, when such as distance objective with a thickness of 5nm~10nm, it may be selected to stop
Only laser irradiation then proceedes to continue to grind to the wafer 105 to be ground, to reduce the surface of the wafer to be ground 105
Defect improves grinding quality.
As described above, polissoir of the invention, has the advantages that
The present invention by the increase laser aid 107 in the polissoir, and is being urged by providing a kind of polissoir
Change and increase in grinding pad 101 and 105 surface of grinding crystal wafer can be treated by laser and handled by the through-hole 108 of laser, generates
Microdefect, the microdefect are greatly improved the catalysis reaction of catalyst, to greatly improve the grinding speed of wafer 105 to be ground
Rate improves production efficiency, and polissoir through the invention, the grinding rate of SiC wafer is up to 20 μm/h or more.Of the invention
Structure is simple, is greatly improved the grinding efficiency of SiC wafer, is with a wide range of applications in field of semiconductor manufacture.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (14)
1. a kind of polissoir, which is characterized in that the polissoir includes:
It is catalyzed grinding pad, surface includes catalyst, and the catalysis grinding pad is provided with the through-hole passed through for laser；
First power device is connected to the catalysis grinding pad, and provides for the catalysis grinding pad and to be parallel to the catalysis and grind
The power of the period round-trip translational motion in the leveling face of mill；
Wafer fixed disk, for fixing wafer to be ground, so that the wafer to be ground is contacted with the catalysis grinding pad；
Second power device is connected to the wafer fixed disk, provides rotation for the wafer fixed disk and the wafer to be ground
Rotatory force, and the pressure of the wafer to be ground and the catalysis grinding pad is provided；And
Laser aid is set to below the catalysis grinding pad, by the through-hole of the catalysis grinding pad, to the crystalline substance to be ground
Circular surfaces carry out laser treatment.
2. polissoir according to claim 1, it is characterised in that: further include a fluid circulation system, comprising:
Accommodation groove is surrounded on the catalysis grinding pad, and provides reaction liquid for the catalysis grinding pad；
Feeding device, for providing reaction liquid for the accommodation groove；And
Pumping equipment, for the reaction liquid in the accommodation groove to be discharged.
3. polissoir according to claim 2, it is characterised in that: the reaction liquid that the feeding device provides includes water
(H2) or hydrogen peroxide (H O2O2) aqueous solution.
4. polissoir according to claim 1, it is characterised in that: the catalyst includes platinum (Pt), palladium (Pd), ruthenium
(Ru), one or more of group composed by nickel (Ni), cobalt (Co), chromium (Cr) and molybdenum (Mo) combines.
5. polissoir according to claim 1, it is characterised in that: the wafer to be ground includes silicon carbide (SiC) crystalline substance
One of round and gallium nitride (GaN) wafer.
6. polissoir according to claim 1, it is characterised in that: second power device provides the crystalline substance to be ground
The round pressure limit with the catalysis grinding pad is 500hpa~2000hpa.
7. polissoir according to claim 1, it is characterised in that: second power device provides the wafer and fixes
The revolving speed of disk and the wafer to be ground is no more than 30rpm.
8. polissoir according to claim 1, it is characterised in that: first power device controls the catalysis grinding
The total moving distance for padding round-trip translational motion a cycle is no more than the brilliant diameter of a circle to be ground.
9. polissoir according to claim 8, it is characterised in that: the through-hole is correspondingly arranged in the wafer to be ground
The central region of initial position, so that the catalysis grinding pad can be irradiated with a laser always in period round-trip translational motion.
10. polissoir according to claim 1, it is characterised in that: it is described catalysis grinding pad setting number of openings be
It is 3 not small, and the laser aid is all through-holes while providing laser and exposing to the wafer to be ground simultaneously.
11. polissoir according to claim 1, it is characterised in that: the speed of the catalysis round-trip translational motion of grinding pad
Degree is no more than 5cm/sec.
12. polissoir according to claim 1, it is characterised in that: the laser aid includes AlGaN base laser.
13. polissoir according to claim 1, it is characterised in that: the laser that the laser aid provides swashs for line style
Light.
14. polissoir according to claim 1, it is characterised in that: the laser wavelength range that the laser aid provides
For 222nm~261nm, the power bracket of laser is 10mW~40mW.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711049908.1A CN109719614A (en) | 2017-10-31 | 2017-10-31 | A kind of polissoir |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711049908.1A CN109719614A (en) | 2017-10-31 | 2017-10-31 | A kind of polissoir |
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| Publication Number | Publication Date |
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| CN109719614A true CN109719614A (en) | 2019-05-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711049908.1A Pending CN109719614A (en) | 2017-10-31 | 2017-10-31 | A kind of polissoir |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110962040A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Cleaning method and cleaning system |
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| US20080164458A1 (en) * | 2006-12-28 | 2008-07-10 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
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