CN109713104A - Light-emitting component, light source module and backlight module - Google Patents
Light-emitting component, light source module and backlight module Download PDFInfo
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- CN109713104A CN109713104A CN201711011787.1A CN201711011787A CN109713104A CN 109713104 A CN109713104 A CN 109713104A CN 201711011787 A CN201711011787 A CN 201711011787A CN 109713104 A CN109713104 A CN 109713104A
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Abstract
A kind of light-emitting component, light source module and backlight module.Light-emitting component includes light mixing substrate and multiple LED wafers.Light mixing substrate has first surface and the second surface relative to first surface.LED wafer is set to the first surface of light mixing substrate, and the light that LED wafer is issued issues after mixing via light mixing substrate.Light mixing substrate is the growth substrate of LED wafer.The area of light mixing substrate is greater than the area summation of LED wafer, and the distance between wantonly two LED wafers are greater than the side length of any one LED wafer.In this way, which the optical distance of backlight module will be enabled to be greatly reduced, be conducive to the product design of slimming.
Description
Technical field
The invention relates to a kind of light-emitting component, light source module and backlight modules.
Background technique
Direct-type backlight light source module is at present based on large-sized monitor, it is desirable that optical distance (Optical
Distance, OD) from 40mm down to be less than 15mm.In order to reach the demand of display slimming, it is thinned in recent years
The backing structure of high dynamic range (High Dynamic Range, HDR) further apply in Vehicular instrument board, notes type
Computer panel even mobile phone backlight, so that optical distance requires that 5mm or even 0.5mm will be reduced to.Therefore how so thin
Optical distance under reach highly uniform area source, it is real to belong to current important one of research and development project, also become currently associated neck
Domain needs improved target.
Summary of the invention
In view of this, a purpose of the present invention is that proposing a kind of light-emitting component, light source module that can be solved the above problems
And backlight module.
In order to achieve the above object, an embodiment according to the present invention, a kind of light-emitting component, including light mixing substrate and
Multiple LED wafers.Light mixing substrate has first surface and the second surface relative to first surface.Light-emitting diodes
Pipe chip is set to the first surface of light mixing substrate, and the light that LED wafer is issued is sent out after mixing via light mixing substrate
Out.Light mixing substrate is the growth substrate of LED wafer.The area of light mixing substrate is greater than the area of LED wafer
Summation, and the distance between wantonly two LED wafers are greater than the side length of any one LED wafer.
In one or more embodiments of the invention, above-mentioned LED wafer includes p type semiconductor layer, N-type
Semiconductor layer, first electrode and a second electrode.First electrode and second electrode are set to each LED wafer
Relative to the side of light mixing substrate, and it is electrically connected in p type semiconductor layer and n type semiconductor layer.
In one or more embodiments of the invention, above-mentioned light-emitting component further include: wavelength conversion layer.Wavelength convert
Layer is set on the second surface of light mixing substrate.
In one or more embodiments of the invention, wavelength convert is coated on the second surface of above-mentioned light mixing substrate
Material.
In one or more embodiments of the invention, above-mentioned light-emitting component further include: optical film.Optical film is set to
Above the second surface of light mixing substrate.
In one or more embodiments of the invention, the second surface of above-mentioned light mixing substrate has pattern structure.
In one or more embodiments of the invention, the thickness of above-mentioned light-emitting component is less than 10mm.
In one or more embodiments of the invention, the thickness of above-mentioned light-emitting component is less than 5mm.
In one or more embodiments of the invention, the thickness of above-mentioned light-emitting component is less than 2mm.
In one or more embodiments of the invention, the material of above-mentioned light mixing substrate includes sapphire, glass, transparent
Plastic material or material containing light diffusion particle.
In one or more embodiments of the invention, the material of above-mentioned LED wafer includes gallium nitride or phosphorus
Change aluminium indium gallium quaternary material.
Another embodiment according to the present invention, a kind of light source module, including circuit board and a plurality of light-emitting elements.It shines
Element is with rewinding method die bond on circuit board.
In one or more embodiments of the invention, above-mentioned circuit board includes conductive layer.Shining in light-emitting component
Diode wafer is electrically connected to each other by conductive layer.
In one or more embodiments of the invention, above-mentioned at least two light-emitting components are electrical each other by conductive layer
Connection.
Another embodiment according to the present invention, a kind of light source module, including control circuit and a plurality of light-emitting elements.Control
Circuit processed is electrically connected between light-emitting component.
In one or more embodiments of the invention, above-mentioned light-emitting component further includes conductive layer, and in light-emitting component
LED wafer be electrically connected to each other by conductive layer.
In one or more embodiments of the invention, above-mentioned light-emitting component further includes at least one control element, and
Control element is electrically connected at least one LED wafer in each light-emitting component.
In one or more embodiments of the invention, the light mixing substrate in above-mentioned light-emitting component is control element and hair
The growth substrate of optical diode chip.
In one or more embodiments of the invention, above-mentioned light-emitting component further includes a control element, and is controlled
Element is electrically connected at conductive layer.
In one or more embodiments of the invention, above-mentioned light-emitting component further includes multiple control elements, and is controlled
Element is electrically connected at conductive layer.
In one or more embodiments of the invention, the quantity of the control element in above-mentioned light-emitting component corresponds to hair
The quantity of optical diode chip, and control element independently controls LED wafer.
In one or more embodiments of the invention, above-mentioned light-emitting component further includes light barrier structure and multiple controls
Element processed, photoresist is every structure setting in light mixing substrate, and to define multiple light emitting regions, each light emitting region includes a hair
Optical diode chip and a control element.
In one or more embodiments of the invention, above-mentioned light source module further include: wavelength conversion layer.Wavelength convert
Layer is set on light-emitting component.
In one or more embodiments of the invention, applied on the second surface of the light mixing substrate in above-mentioned light-emitting component
It is furnished with wavelength conversion material.
Another embodiment according to the present invention, a kind of backlight module, including light source module.The integral thickness of backlight module
Less than 10mm.
Another embodiment according to the present invention, a kind of backlight module, including light source module.The integral thickness of backlight module
Less than 10mm.
In conclusion light-emitting component of the invention, light source module and backlight module due to by LED wafer at
Long substrate is directly as the light mixing substrate of light-emitting component, and not only the thickness of light-emitting component can be effectively reduced, and does not also need volume
Outer setting secondary lens or other light-guide devices are conducive to thin so that the optical distance of backlight module can be greatly reduced
The product design of type.
The above is only to illustrate the problem of present invention is to be solved, technical means to solve problem and its generate
The effect of etc., detail of the invention will be discussed in detail in embodiment and relevant drawings below.
Detailed description of the invention
For above and other purpose, feature, advantage and embodiment of the invention can be clearer and more comprehensible, appended attached drawing is said
It is bright as follows:
Fig. 1 is the local top view of the backlight module of an embodiment of the present invention；
Fig. 2 is the partial side view of the backlight module of Fig. 1；
Fig. 3 is the enlarged drawing of the part A of Fig. 2；
Fig. 4 is the enlarged drawing of the part A of Fig. 2 in another embodiment of the present invention；
Fig. 5 is the enlarged drawing of the part A of Fig. 2 in another embodiment of the present invention；
Fig. 6 is the local top view of the light source module of another embodiment of the present invention；
Fig. 7 is the sectional view along the I-I line segment of Fig. 6；
Fig. 8 A is in another embodiment of the present invention along the sectional view of the I-I line segment of Fig. 6；
Fig. 8 B is in another embodiment of the present invention along the sectional view of the I-I line segment of Fig. 6；
Fig. 9 is the local top view of the light source module of another embodiment of the present invention；
Figure 10 is the sectional view along the II-II line segment of Fig. 9；
Figure 11 A is in another embodiment of the present invention along the sectional view of the II-II line segment of Fig. 9；
Figure 11 B is in another embodiment of the present invention along the sectional view of the II-II line segment of Fig. 9.
Specific embodiment
Multiple embodiments of the invention will be disclosed with attached drawing below, as clearly stated, the details in many practices
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in some embodiments of the present invention, the details in these practices is non-essential.In addition, for the sake of simplifying attached drawing, one
A little known usual structures will be painted in a manner of simply illustrating in the accompanying drawings with element.
Fig. 1 is the local top view of the backlight module 1 of an embodiment of the present invention.Fig. 2 is the office of the backlight module 1 of Fig. 1
Portion's side view.Firstly, as shown in Figure 1 and Figure 2, in present embodiment, backlight module 1 includes light source module 10 and optics
Film OF, optical film OF are set to 10 top of light source module.Light source module 10 include circuit board 200, a plurality of light-emitting elements 100 and
Wavelength conversion layer WC, light-emitting component 100 are set on circuit board 200, and wavelength conversion layer WC is set on light-emitting component 100.Often
A light-emitting component 100 includes light mixing substrate 102 and multiple LED wafers 104.In the present embodiment, each to shine
The quantity of LED wafer 104 included by element 100 may be, for example, four, but invention is not limited thereto, this field
Has the visual actual demand of usually intellectual and elasticity selects LED wafer 104 included by each light-emitting component 100
Quantity.
Fig. 3 is the enlarged drawing of the part A of Fig. 2.As shown in FIG. 2 and 3, light-emitting component 100 with rewinding method die bond in
On circuit board 200.In the present embodiment, circuit board 200 includes conductive layer 202, and the light emitting diode in light-emitting component 100 is brilliant
Piece 104 is electrically connected to each other by conductive layer 202.In some embodiments, at least two light-emitting components 100 pass through conductive layer
202 are electrically connected to each other.
Please continue to refer to Fig. 3, in each light-emitting component 100, light mixing substrate 102 is with first surface 1021 and relatively
In the second surface 1022 of first surface 1021.LED wafer 104 is set to the first surface of light mixing substrate 102
1021, and the light that is issued of LED wafer 104 mixed via light mixing substrate 102 after issue.In the present embodiment,
Light mixing substrate 102 be LED wafer 104 growth substrate, that is to say, that LED wafer 104 be for example, by
The mode of epitaxial growth process is grown up on light mixing substrate 102.In the present embodiment, the material of light mixing substrate 102 include sapphire,
Glass, transparent plastic material or the material containing light diffusion particle, the material of LED wafer 104 include gallium nitride or phosphorus
Change aluminium indium gallium quaternary material, but invention is not limited thereto, the visual actual demand of one skilled in the art and elasticity choosing
Select the material of light mixing substrate 102 and LED wafer 104.
Whereby, the present invention using LED wafer 104 growth substrate itself guiding property, by its directly as
The light mixing substrate 102 of light-emitting component 100, therefore the light that these LED wafers 104 are issued can be in light mixing base
Roundtrip in plate 102 and generate mixed uniformly effect, do not need through secondary lens or additional light-guide device, Ji Neng
The another side of light mixing substrate 102 forms uniform area source.
In general, manufacture complete polycrystalline light emitting diode wafer integral thickness can be controlled in 500 μm~50 μm it
Between.Therefore, in the present embodiment, the thickness of light-emitting component 100 is smaller than 10mm.But invention is not limited thereto, some
In embodiment, the thickness of light-emitting component 100 is smaller than 5mm.In some embodiments, the thickness of light-emitting component 100 can be small
In 2mm.In addition, in the present embodiment, the integral thickness of backlight module 1 is smaller than 10mm.
Light-emitting component 100 of the invention by by the growth substrate of LED wafer 104 directly as light-emitting component
100 light mixing substrate 102, therefore do not need that secondary lens or other light-guide devices are additionally arranged, it can not only make backlight module 1
Optical distance be greatly reduced, reduced thickness can also achieve the effect that local dimming (Local Dimming).In addition, when hair
When thering is the LED wafer 104 of part to damage or fail in optical element 100, due to other normal LED wafers
104 light issued still can in light mixing substrate 102 roundtrip and generate mixed uniformly effect, therefore will not influence
Area source goes out the uniformity of light.Moreover, due to including multiple LED wafers 104 in each light-emitting component 100, because
This in piece, these LED wafers 104 in each light-emitting component 100 can once direct piece uploading, therefore compared to
The backlight module of traditional planetary all over the sky is needed light emitting diode one one piece one by one, and the present invention can also reach reduction and beat
Piece number, the effect for reducing manufacturing cost and time and labour saving.
In each light-emitting component 100, the area of light mixing substrate 102 is greater than the area of these LED wafers 104
Summation, that is to say, that in the present embodiment, the area of light mixing substrate 102 is greater than the face of this four LED wafers 104
Product summation.In addition, each LED wafer 104 has a side length L, and in each light-emitting component 100, wantonly two luminous two
The distance between pole pipe chip 104 D is greater than the side length L of any one LED wafer 104.Whereby, under identical area,
The present invention can be used small number of LED wafer 104 and reach dense arrangement set-up mode with tradition planetary all over the sky
Identical or more preferably brightness effects, can be greatly reduced manufacturing cost.
Please continue to refer to Fig. 3, each LED wafer 104 include p type semiconductor layer 106, n type semiconductor layer 108,
First electrode 110 and second electrode 112.First electrode 110 and second electrode 112 are set to LED wafer 104
Relative to the side of light mixing substrate 102, and it is electrically connected in p type semiconductor layer 106 and n type semiconductor layer 108.At this
In embodiment, LED wafer 104 is electrically connected by first electrode 110 and second electrode 112 with rewinding method
In the conductive layer 202 on circuit board 200.
As shown in figure 3, wavelength conversion layer WC included by light source module 10 is set on light-emitting component 100.In this implementation
In mode, wavelength conversion layer WC is set on the second surface 1022 of light mixing substrate 102.Pass through setting for wavelength conversion layer WC
It sets, some light that LED wafer 104 is issued can generate the light with script via the effect of wavelength conversion layer WC
Line has the light of different wave length so that light source module 10 can achieve it is required photochromic.In some embodiments it is possible to
Wavelength is coated on the second surface 1022 for the light mixing substrate 102 for being not provided with wavelength conversion layer WC, but changing into light-emitting component 100
Transition material.The material of wavelength conversion layer WC and wavelength conversion material may include organic or inorganic material.For example, You Jicai
Material may be, for example, fluorchrome (Fluorescent colorants) or high molecular fluorescent material (Fluorescent
Polymer), inorganic material may be, for example, phosphor material powder (Phosphor) or quanta point material (Quantum dots).Wavelength
Conversion layer WC or wavelength conversion material can be arranged or be coated on to property again after the completion of all 100 pieces of light-emitting component
On these light-emitting components 100, to achieve the effect that save production process and manufacturing cost cost.
In present embodiment, optical film OF included by backlight module 1 is set to above wavelength conversion layer WC.Pass through light
The setting for learning film OF can make backlight module 1 reach light-out effect more evenly.
In some embodiments, above-mentioned wavelength conversion layer WC or optical film OF can also be individually formed at each shine
In element 100.It will illustrate by taking Fig. 4 as an example below.
Fig. 4 is the enlarged drawing of the part A of Fig. 2 in another embodiment of the present invention.In the present embodiment, light-emitting component
100 further include wavelength conversion layer WC1.Wavelength conversion layer WC1 is set on the second surface 1022 of light mixing substrate 102.Some
In embodiment, it can also be not provided with wavelength conversion layer WC1, but change on the second surface 1022 of light mixing substrate 102 and be coated with
Wavelength conversion material.Material in relation to wavelength conversion layer WC1 and wavelength conversion material can refer to the explanation of previous embodiment,
Details are not described herein.
Please continue to refer to Fig. 4.In the present embodiment, light-emitting component 100 further includes optical film OF1.Optical film OF1 setting
Above the second surface 1022 of light mixing substrate 102.In some embodiments, optical film OF1 may be disposed at wavelength conversion layer
On WC1.In some embodiments, the second surface 1022 of light mixing substrate 102 can have pattern structure.It is tied by patterning
The setting of structure can make light-emitting component 100 reach light-out effect more evenly.
In the foregoing embodiment, light source module 10 is the conductive layer 202 by being set on circuit board 200 to carry out electricity
Property connection, that is to say, that light source module 10 is operated by the control circuit on circuit board 200.But the present invention not with
This is limited, and in other embodiments, control circuit can also be directly arranged on light mixing substrate 102, below will be by taking Fig. 5 as an example
Explanation.
Fig. 5 is the enlarged drawing of the part A of Fig. 2 in another embodiment of the present invention.In the present embodiment, light source module 10
It further include control circuit, and control circuit is electrically connected between these light-emitting components 100.In some embodiments, it controls
Circuit may include multiple conductive layer 202A, be respectively arranged in these light-emitting components 100.In other words, each light-emitting component 100
It further include conductive layer 202A.For example, as shown in figure 5, conductive layer 202A may be disposed at the first surface of light mixing substrate 102
1021, the LED wafer 104 in light-emitting component 100 is electrically connected to each other by conductive layer 202A.
Fig. 6 is the local top view of the light source module 10A of another embodiment of the present invention.Fig. 7 is the I-I line along Fig. 6
The sectional view of section.The light source module 10A of present embodiment is similar to above-mentioned light source module 10, and the difference of the two is: at this
In embodiment, each light-emitting component 100A in light source module 10A further includes at least one control element 114.
As shown in Fig. 6 and Fig. 7, in present embodiment, control element 114 may be, for example, transistor, but the present invention is not
As limit, the visual actual demand of one skilled in the art and elasticity selection control element 114 type.
In the present embodiment, the quantity of control element 114 included by each light-emitting component 100A may be, for example, one,
But invention is not limited thereto, the visual actual demand of one skilled in the art and elasticity selects each light-emitting component 100A
The quantity of included control element 114.In addition, control element 114 is electrically connected at conductive layer 202.In each light-emitting component
In 100A, since the distance between wantonly two LED wafers 104 D is greater than the side of any one LED wafer 104
Long L, therefore between LED wafer 104 there is enough spaces control element 114 is arranged.Control element 114 electrically connects
At least one LED wafer 104 being connected in light-emitting component 100A.In the present embodiment, each light-emitting component 100A
Included control element 114 is electrically connected at each of this light-emitting component 100A LED wafer 104, but this hair
It is bright to be not limited, the visual actual demand of one skilled in the art and elasticity selection control element 114 be electrically connected
The quantity of LED wafer 104.
Fig. 8 A is in another embodiment of the present invention along the sectional view of the I-I line segment of Fig. 6.As aforementioned, control circuit
It can also be directly arranged on light mixing substrate 102.Therefore, in the present embodiment, light source module 10A further includes control circuit,
And control circuit is electrically connected between these light-emitting components 100A.In some embodiments, control circuit may include multiple
Conductive layer 202A is respectively arranged in these light-emitting components 100A.In other words, each light-emitting component 100A further includes conductive layer
202A.For example, as shown in Figure 8 A, conductive layer 202A may be disposed at the first surface 1021 of light mixing substrate 102, light-emitting component
LED wafer 104 in 100A is electrically connected to each other by conductive layer 202A.In addition, control element 114 electrically connects
It is connected to conductive layer 202A.
Fig. 8 B is in another embodiment of the present invention along the sectional view of the I-I line segment of Fig. 6.The embodiment and figure of Fig. 8 B
The difference of the embodiment of 8A is: the light mixing substrate 102 in each light-emitting component 100A is control element 114 and light-emitting diodes
The growth substrate of pipe chip 104.In other words, control element 114 and LED wafer 104 are grown up in identical growth base
On plate.That is, light mixing substrate 102 is only as the growth substrate of LED wafer 104, while also can be as formation
The substrate of control element 114 has the benefit for saving processing time and cost.In addition, control element 114 is electrically connected at conduction
Layer 202A.
Fig. 9 is the local top view of the light source module 10B of another embodiment of the present invention.Figure 10 is the II-II along Fig. 9
The sectional view of line segment.The light source module 10B of present embodiment is similar to above-mentioned light source module 10A, and the difference of the two is: this
The light-emitting component 100B of embodiment further includes light barrier structure 116, is set in light mixing substrate 102, to define multiple hairs
Light region, each light emitting region include a LED wafer and a control element 114.
As shown in Fig. 9 and Figure 10, light-emitting component 100B further includes light barrier structure 116, is set to light mixing substrate 102
It is interior, to define multiple light emitting region LR1~LR4.In present embodiment, the quantity of light emitting region may be, for example, four, but
Invention is not limited thereto, the visual actual demand of one skilled in the art and elasticity selection light emitting region quantity.This
Four light emitting region LR1~LR4 formed one 2 multiply 2 matrix form, including in light emitting region LR1 and light emitting region LR4 can
The LED wafer 104A of the first coloured light is issued, light emitting region LR2 includes that the light emitting diode of capable of emitting second coloured light is brilliant
Piece 104B, light emitting region LR3 include the LED wafer 104C of capable of emitting third coloured light, and the first coloured light, the second coloured light
And the color of third coloured light three is different.For example, the first coloured light may be, for example, blue, the second coloured light may be, for example, red
Color, third coloured light may be, for example, green, but invention is not limited thereto.
It include multiple control elements 114 in each light-emitting component 100B.In the present embodiment, each light-emitting component 100B
The quantity of included control element 114 may be, for example, four, but invention is not limited thereto, one skilled in the art
Visual actual demand and elasticity select the quantity of control element 114 included by each light-emitting component 100B.In addition, control element
114 are electrically connected at conductive layer 202.This four control elements 114 are located in this four light emitting region LR1~LR4, also
It is to say, light emitting region LR1 includes a LED wafer 104A and a control element 114, light emitting region LR2 include
One LED wafer 104B and a control element 114, light emitting region LR3 include a LED wafer
104C and control element 114, light emitting region LR4 include a LED wafer 104A and a control element
114。
As shown in figure 9, in the present embodiment, light barrier structure 116 is set in light mixing substrate 102 in cross, with
Define light emitting region LR1~LR4.Light barrier structure 116 can by way of stopping or absorbing, obstruct light emitting region LR1~
Light caused by different zones in LR4, in case light caused by any region influences light caused by other regions.This
Outside, in the present embodiment, the quantity of the control element 114 in light-emitting component 100B correspond to LED wafer 104A~
The quantity of 104C, and control element 114 independently controls LED wafer 104A~104C.For example, it is shining
In the LR1 of region, control element 114 can independent control LED wafer 104A, in the LR2 of light emitting region, control element 114
Can independent control LED wafer 104B, in the LR3 of light emitting region, control element 114 can independent control light emitting diode
Chip 104C, in the LR4 of light emitting region, control element 114 can independent control LED wafer 104A.
Figure 11 A is in another embodiment of the present invention along the sectional view of the II-II line segment of Fig. 9.As aforementioned, control electricity
Road can also be directly arranged on light mixing substrate 102.Therefore, in the present embodiment, light source module 10B further includes control electricity
Road, and control circuit is electrically connected between these light-emitting components 100B.In some embodiments, control circuit may include more
A conductive layer 202A is respectively arranged in these light-emitting components 100B.In other words, each light-emitting component 100B further includes conduction
Layer 202A.For example, as shown in Figure 11 A, conductive layer 202A may be disposed at the first surface 1021 of light mixing substrate 102, shine
LED wafer 104A~104C in element 100B is electrically connected to each other by conductive layer 202A.In addition, control member
Part 114 is electrically connected at conductive layer 202A.
Figure 11 B is in another embodiment of the present invention along the sectional view of the II-II line segment of Fig. 9.The embodiment of Figure 11 B
Be with the difference of the embodiment of Figure 11 A: the light mixing substrate 102 in each light-emitting component 100B is control element 114 and hair
The growth substrate of optical diode chip 104A~104C.In other words, control element 114 and LED wafer 104A~
104C grows up in identical growth substrate.That is, light mixing substrate 102 not only as LED wafer 104A~
The growth substrate of 104C, while also can have as the substrate for forming control element 114 and save the good of processing time and cost
Place.In addition, control element 114 is electrically connected at conductive layer 202A.
By above for the detailed description of a specific embodiment of the invention, it is apparent that light-emitting component of the invention,
Light source module and backlight module are due to the light mixing substrate by the growth substrate of LED wafer directly as light-emitting component, no
Only the thickness of light-emitting component can be effectively reduced, and also not need that secondary lens or other light-guide devices are additionally arranged, and then make
The optical distance for obtaining backlight module can be greatly reduced, and be conducive to the product design of slimming.
Although the present invention is disclosed above with embodiment, so it is any to be familiar with this skill not to limit the present invention
Person, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection scope of the present invention is worked as
Subject to the scope of which is defined in the appended claims.
Claims (26)
1. a kind of light-emitting component characterized by comprising
One light mixing substrate has a first surface and the second surface relative to the first surface；And
Multiple LED wafers are set to the first surface of the light mixing substrate, wherein the multiple light emitting diode is brilliant
The light that piece is issued via the light mixing substrate mix after issue, the light mixing substrate be the multiple LED wafer at
Long substrate, the area of the light mixing substrate are greater than the area summation of the multiple LED wafer, and it is wantonly two it is described luminous
The distance between diode wafer is greater than the side length of any one LED wafer.
2. light-emitting component according to claim 1, which is characterized in that each LED wafer includes a p-type half
Conductor layer, a n type semiconductor layer, a first electrode and a second electrode, the first electrode and the second electrode are set to
Side of each LED wafer relative to the light mixing substrate, and be electrically connected in the p type semiconductor layer and
The n type semiconductor layer.
3. light-emitting component according to claim 1, which is characterized in that further include:
One wavelength conversion layer is set on the second surface of the light mixing substrate.
4. light-emitting component according to claim 1, which is characterized in that be coated with wave on the second surface of the light mixing substrate
Long transition material.
5. light-emitting component according to claim 1, which is characterized in that further include:
One optical film is set to above the second surface of the light mixing substrate.
6. light-emitting component according to claim 1, which is characterized in that the second surface of the light mixing substrate has patterning
Structure.
7. light-emitting component according to claim 1, which is characterized in that the thickness of the light-emitting component is less than 10mm.
8. light-emitting component according to claim 1, which is characterized in that the thickness of the light-emitting component is less than 5mm.
9. light-emitting component according to claim 1, which is characterized in that the thickness of the light-emitting component is less than 2mm.
10. light-emitting component according to claim 1, which is characterized in that the material of the light mixing substrate includes sapphire, glass
Glass, transparent plastic material or the material containing light diffusion particle.
11. light-emitting component according to claim 1, which is characterized in that the material of the LED wafer includes nitrogen
Change gallium or AlGaInP quaternary material.
12. a kind of light source module characterized by comprising
One circuit board；And
Multiple light-emitting components as described in claim 1, with rewinding method die bond on the circuit board.
13. light source module according to claim 12, which is characterized in that the circuit board includes a conductive layer, each hair
The LED wafer in optical element is electrically connected to each other by the conductive layer.
14. light source module according to claim 13, which is characterized in that at least two light-emitting components pass through the conduction
Layer is electrically connected to each other.
15. a kind of light source module characterized by comprising
One control circuit；And
Multiple light-emitting components as described in claim 1, wherein the control circuit is electrically connected between the light-emitting component.
16. light source module according to claim 15, which is characterized in that each light-emitting component further includes a conductive layer,
And the LED wafer in each light-emitting component is electrically connected to each other by the conductive layer.
17. light source module described in 2 or 15 according to claim 1, which is characterized in that each light-emitting component further includes at least one
Control element, and the control element is electrically connected at LED wafer described at least one of each described light-emitting component.
18. light source module according to claim 17, which is characterized in that the light mixing substrate in each light-emitting component is
The growth substrate of the control element and the LED wafer.
19. light source module described in 3 or 16 according to claim 1, which is characterized in that each light-emitting component further includes a control
Element processed, and the control element is electrically connected at the conductive layer.
20. light source module described in 3 or 16 according to claim 1, which is characterized in that each light-emitting component further includes multiple controls
Element processed, and the multiple control element is electrically connected at the conductive layer.
21. light source module according to claim 20, which is characterized in that the control element in each light-emitting component
Quantity correspond to the quantity of the LED wafer, and the control element independently controls the light emitting diode
Chip.
22. light source module described in 2 or 15 according to claim 1, which is characterized in that each light-emitting component further includes a photoresist
Every structure and multiple control elements, the photoresist every structure setting in the light mixing substrate, to define multiple light emitting regions, respectively
The light emitting region includes a LED wafer and a control element.
23. light source module described in 2 or 15 according to claim 1, which is characterized in that further include:
One wavelength conversion layer is set on the light-emitting component.
24. light source module described in 2 or 15 according to claim 1, which is characterized in that the light mixing base in each light-emitting component
Wavelength conversion material is coated on the second surface of plate.
25. a kind of backlight module characterized by comprising
Light source module as claimed in claim 23, wherein the integral thickness of the backlight module is less than 10mm.
26. a kind of backlight module characterized by comprising
Light source module as claimed in claim 24, wherein the integral thickness of the backlight module is less than 10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711011787.1A CN109713104B (en) | 2017-10-25 | 2017-10-25 | Light-emitting element, light source module and backlight module |
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| CN112967671A (en) * | 2021-03-04 | 2021-06-15 | 淮阴工学院 | Interval modular light-emitting diode circuit board |
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