CN109712811A - A kind of two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant - Google Patents
A kind of two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant Download PDFInfo
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- CN109712811A CN109712811A CN201811616987.4A CN201811616987A CN109712811A CN 109712811 A CN109712811 A CN 109712811A CN 201811616987 A CN201811616987 A CN 201811616987A CN 109712811 A CN109712811 A CN 109712811A
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Abstract
The present invention relates to a kind of two-sided Heterogeneous Composite electrode chip capacitors of high temperature resistant, the chip capacity includes capacitance ceramic substrate, surface electrode and bottom-side electrodes, the surface electrode and bottom-side electrodes are respectively arranged on two surfaces of the capacitance ceramic substrate, the surface electrode is silver layer, and the bottom-side electrodes are successively folded from inside to outside in capacitance ceramic upper substrate layer by silver layer, titanium tungsten layer, layers of copper and layer gold and formed.The bottom surface of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the present invention is suitble to reflow soldering process requirement, while surface is suitble to routing bonding, has the advantages that good bonding effect, high temperature resistant, high reliablity, stability are high.
Description
Technical field
The present invention relates to electronic component technology fields, more particularly to a kind of two-sided Heterogeneous Composite electrode chip electricity of high temperature resistant
Hold and preparation method thereof.
Background technique
Single-layer ceramic chip capacity (Single-layer capacitors, SLC) is with size is small, thickness is thin, equivalent string
Connection resistance is low, low advantage is lost, and is applicable in frequency up to 100MHz-100GHz, in high frequency, microwave, small-sized, micromation field
Conjunction has broad application prospects.Single-layer ceramic chip capacity is widely used in microwave communication route, microwave power amplifier, module
(bluetooth module, integrated circuit added component, hydrid integrated circuit module, radio microware communication module), oscillating circuit, timing
Delay circuit, coupling circuit inhibit in high frequency noise circuit, radio frequency bypass and microwave integrated circuit, are dual-use height
Reliably, high stability product.Most of product of single-layer ceramic chip capacity is used in communication electronics and military weapon, daily
It plays a significant role in life and national strategy.
As shown in Figure 1, existing chip capacity includes capacitance ceramic substrate 1 ', surface electrode 2 ' and bottom-side electrodes 3 ', institute
It states surface electrode 2 ' and bottom-side electrodes 3 ' is respectively arranged on two surfaces of the capacitance ceramic substrate 1 ', surface electrode 2 ' and bottom surface
Electrode 3 ' is all made of same metal, such as all using silver or all using gold production.Due to the capacitance ceramic of chip capacity
Substrate 1 ', surface electrode 2 ' and bottom-side electrodes 3 ' are all made of being sintered by 800 DEG C of temperatures above, therefore chip capacity is practical
Heat resistance when use, what the heat resistance of the usually welding material by it between the circuit module of application determined.
Currently, chip capacity requires that product reaches in the application of microwave communication route, microwave power amplifier, module etc.
To the necessary highly reliable, high stable of miniaturization, response speed block and properties of product, the technique of bonding chip capacity is mostly used greatly.
Bonding process is chip to be installed on circuit boards, and realize the electric connection of chip internal circuits and circuit board.Conventional core
Chip capacitor bonding process, be the bottom-side electrodes of chip capacity are affixed on circuit board with low temperature elargol, and with beat aluminum steel, copper wire or
The mode of person's gold thread connects the pad on the top electrode and circuit board of chip capacity.Due to the solidification temperature of low temperature elargol
Degree is at 100 DEG C or so, and the elargol heatproof temperature after solidification is no more than 150 DEG C, so the heatproof temperature of existing chip capacity
No more than 150 DEG C, it is unable to the higher working environment of adaptive temperature.
Tin cream reflow soldering process is usually used in welding SMT patch wiring board, with high, efficient, reliable and stable excellent of accuracy
Point, and compared with low temperature elargol, the heatproof temperature of scolding tin is up to 260 DEG C, therefore the nation in chip capacity is applied in tin cream Reflow Soldering
Determine in technique, the heat resistance of chip capacity can be obviously improved.
However, the chip capacity of two-sided silver electrode is in the bonding process and in actual use using tin cream Reflow Soldering,
There is a problem of following: silver surface electrode is suitble to carry out bonding welding with aluminum steel, copper wire or gold thread, and welding effect is good, but
When silver-colored bottom-side electrodes are welded on circuit board using tin cream solder reflow techniques, exist and eat silver-colored phenomenon (i.e. silver migration), slight eats
Silver-colored phenomenon will cause chip electric property mutation and reliability decrease, eat silver-colored phenomenon it is serious when die bottom surface entirely without silver it is attached
, expose ceramic body, cause chip after welding to separate with circuit board, directly result in product failure, in addition silver and soldering
It connects and will form sn-ag alloy when blending together, the electrode performance of chip is caused to change.
Summary of the invention
Based on this, the object of the present invention is to provide a kind of two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant, bottom surfaces
It is suitble to reflow soldering process requirement, while surface is suitble to routing bonding, good, high temperature resistant, high reliablity, stability with bonding effect
High advantage.
The technical solution adopted by the present invention is as follows:
A kind of two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant, including capacitance ceramic substrate, surface electrode and bottom surface electricity
Pole, the surface electrode and bottom-side electrodes are respectively arranged on two surfaces of the capacitance ceramic substrate, and the surface electrode is silver
Layer, the bottom-side electrodes are successively folded from inside to outside in capacitance ceramic upper substrate layer by silver layer, titanium tungsten layer, layers of copper and layer gold and are formed.
In chip capacity of the invention, surface electrode is bonded for routing, and bottom-side electrodes are welded on circuit board for bonding
On；Surface electrode and the silver layer (Ag) of bottom-side electrodes can be made pottery with capacitor as the basal layer in conjunction with capacitance ceramic substrate
Ceramic chip forms strong combination, and the silver layer of surface electrode can carry out bonding welding with aluminum steel, copper wire or gold thread well；
The titanium tungsten layer (TiW) of bottom-side electrodes is used as transition zone, mainly plays a transition role, combines silver layer preferably with layers of copper, and have
Barrier effect；The layers of copper (Cu) of bottom-side electrodes is used as barrier layer, for stopping the destruction of outer bound pair transition zone, and there is welding to make
With；The layer gold (Au) of bottom-side electrodes is both welding layer and protective layer, and stability is high, can prevent oxidation, anticorrosive, anti-broken
Bad, high temperature resistant prevents silver-colored migration, can meet the technique requirement of Reflow Soldering well, and effectively blocks tin cream reflow soldering
When scolding tin penetrate into silver layer to form sn-ag alloy and avoiding and eat silver-colored phenomenon and occur, to prevent welding tin cream from destroying silver layer.
Compared with the existing technology, the bottom-side electrodes of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the invention can be very
It is welded with tin cream Reflow Soldering or with silver paste well, titanium tungsten layer therein combines silver layer preferably with layers of copper, and has and stop to make
With；Layers of copper for stopping the destruction of outer bound pair transition zone, and has welding effect as barrier layer；Layer gold is both welding layer,
It is protective layer, scolding tin infiltrates into silver layer when effectively blocking tin cream Reflow Soldering, and the welding effect using tin cream Reflow Soldering is good
It is good, there is no sn-ag alloy phenomenon or eat silver-colored phenomenon.Moreover, because tin cream Reflow Soldering temperature is 260 DEG C, and chip of the present invention
The layer gold of bottom-side electrodes and tin cream Reflow Soldering will not eat silver in capacitor, so the heatproof temperature of chip capacity of the present invention can reach
260 DEG C, according to high temperature tin up to 300 DEG C or more, i.e., its heatproof temperature is at 260 DEG C or more.In addition, in chip capacity of the present invention
The silver layer surface of surface electrode can bonding be welded well with aluminum steel, copper wire or gold thread, non-off-line, reliability after bonding routing
It is high.
It is of the invention by being stacked silver layer, titanium tungsten layer, layers of copper and layer gold from inside to outside in bottom-side electrodes as a result,
Stability, temperature tolerance, corrosion resistance, the anti-destructive of thermistor chip can effectively be promoted, hence it is evident that improve reliability, effectively
Ground solves the problems, such as that silver is eaten in former tin cream Reflow Soldering, and very well satisfies routing key as surface electrode by using silver layer
The technique requirement of conjunction.
Further, in the bottom-side electrodes, the silver layer with a thickness of 5~7 microns, the titanium tungsten layer with a thickness of
0.1~0.15 micron, the layers of copper with a thickness of 0.1~0.2 micron, the layer gold with a thickness of 0.25~0.55 micron.
By the restriction of the thickness range herein to layer metal each in bottom-side electrodes, is guaranteeing electric property and promoted reliable
Property while, can control material cost, experiment proves that being reached by product electrical property and reliability made by above-mentioned thickness range
To best；
Wherein, silver layer is not too thick then close in conjunction with capacitance ceramic substrate, is easy when reducing product reliability, and cutting
Skin and crimping, cost is also high, while if preparing silver layer with silver paste printing, the too thick glass also resulted in silver paste of silver layer is excessive
Ground infiltrates into capacitance ceramic substrate, to reduce product reliability, the too thin then surface porosity factor of silver layer is high, can equally reduce production
Product reliability can also reduce properties of product qualification rate；
Titanium tungsten layer, layers of copper be barrier layer, it is too thick then bad with the silver layer of innermost layer ining conjunction with, cutting when due to stress greatly and
Layering is easy to be detached from, it is too thin, barrier effect can not be played；
Layer gold is both welding layer and protective layer, and the too thin then product electrical property qualification rate of layer gold is low, and product reliability drops
It is low, and can not play a protective role, the too thick then cost of layer gold is too high, and will lead to layer gold crimping when product scribing is cut and rise
Skin, to influence product appearance and reduce reliability.
Further, in the titanium tungsten layer of the bottom-side electrodes, the mass ratio of titanium and tungsten is 1:9, the titanium tungsten layer of the composition with
The coefficient of expansion of capacitance ceramic substrate is almost the same, and bottom-side electrodes and capacitance ceramic substrate is made to keep good combination, at the same with silver
The combination of layer and layers of copper is also more preferable.
Further, the silver thickness of the surface electrode is 5~7 microns.Silver layer too it is thick then with capacitance ceramic substrate knot
It is easy peeling and crimping when closing not close, reduction product reliability, and cutting, cost is also high, while making if printed with silver paste
Standby silver layer, the too thick glass also resulted in silver paste of silver layer is infiltrated into too much in capacitance ceramic substrate, so that reducing product can
By property；The too thin then surface porosity factor of silver layer is high, can equally reduce product reliability, can also reduce properties of product qualification rate.
Further, the silver layer of the surface electrode and the silver layer of bottom-side electrodes are by the capacitance ceramic substrate
The upper printing silver paste and mode of high temperature sintering is formed；Titanium tungsten layer, layers of copper and the layer gold of the bottom-side electrodes are all using sputtering method
It is formed.
The glass powder in silver paste is penetrated into, which in capacitance ceramic, by high temperature sintering forms strong binder course；Using
Titanium tungsten layer, layers of copper and the layer gold that sputtering method makes are very fine and close, have stronger survivability, bring higher reliability.
Another object of the present invention is to provide the two-sided Heterogeneous Composite electrode chip electricity of high temperature resistant described in any of the above embodiments
The preparation method of appearance, include the following steps: to set gradually on a surface of the capacitance ceramic substrate of sheet silver layer, titanium tungsten layer,
Layers of copper and layer gold, and silver layer is set on another surface of the capacitance ceramic substrate, then the capacitance ceramic substrate is cut
It is cut into the single chip capacity.
Further, the preparation method includes the following steps:
S1: silver paste is printed respectively on two surface of capacitance ceramic substrate of sheet, high temperature sintering is then carried out, obtains two tables
Face is printed with the capacitance ceramic substrate of one layer of silver layer respectively；
S2: titanium tungsten layer, layers of copper and gold are successively sputtered on the silver layer on a surface of the capacitance ceramic substrate that step S1 is obtained
Layer；
S3: calculating the size of one single chip capacitor according to the capacitor of required chip capacity, then obtains to step S2
The capacitance ceramic substrate arrived carries out cutting-up, obtains the single chip capacity.
Further, in step S1, the temperature of high temperature sintering is 850~870 DEG C, and the sintered heat insulating time is 15 minutes, is led to
It crosses high temperature sintering and penetrates into the glass powder in silver paste and form strong binder course in capacitance ceramic substrate.
Further, it in step S2, is successively splashed using vacuum sputtering film plating machine in argon gas as under conditions of working gas
Penetrate titanium tungsten layer, layers of copper and layer gold.
Further, in step S2, capacitance ceramic substrate is put into plasma cleaner before sputtering and is cleaned, and is living
Change surface.
In order to better understand and implement, the invention will now be described in detail with reference to the accompanying drawings.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the chip capacity of existing two-sided homogeneous electrode；
Fig. 2 is the structural schematic diagram of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the invention；
Fig. 3 is the preparation flow figure of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the invention；
Fig. 4 is vacuum sputtering schematic diagram.
Specific embodiment
Referring to Fig. 2, it is the structural schematic diagram of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the invention；
The two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the invention includes capacitance ceramic substrate 1, surface electrode 2 and bottom
Face electrode 3, the surface electrode 2 and bottom-side electrodes 3 are respectively arranged on two surfaces of the capacitance ceramic substrate 1；The surface
Electrode 2 is silver layer, and the bottom electrode 3 is successively made pottery in capacitor from inside to outside by silver layer 31, titanium tungsten layer 32, layers of copper 33 and layer gold 34
It is laminated on ceramic chip 1.
Specifically, in the bottom-side electrodes 3, the silver layer 31 with a thickness of 5~7 microns, the thickness of the titanium tungsten layer 32
Be 0.1~0.15 micron, the layers of copper 33 with a thickness of 0.1~0.2 micron, the layer gold 34 it is micro- with a thickness of 0.25~0.55
Rice.
In the titanium tungsten layer 32, the mass ratio of titanium and tungsten is 1:9.
The silver thickness of the bottom-side electrodes 3 is 4~6 microns.
The silver layer of the surface electrode 2 and the silver layer 31 of bottom-side electrodes 3 are by way of printing silver paste and high temperature sintering
It is formed, the titanium tungsten layer 32, layers of copper 33 and layer gold 34 are formed using sputtering method.
Fig. 3-4 is please referred to, Fig. 3 is the preparation flow figure of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the invention,
Fig. 4 is vacuum sputtering schematic diagram.
The two-sided Heterogeneous Composite electrode chip capacitor of the high temperature resistant the preparation method is as follows:
S1: silver paste is printed respectively on two surface of capacitance ceramic substrate of sheet, high temperature sintering is then carried out, obtains two tables
Face is printed with the capacitance ceramic substrate of one layer of silver layer respectively.
Specifically, the powder of I class porcelain of capacitance ceramic, II class porcelain or III class porcelain is matched by actually required formula
The capacitance ceramic substrate is made in material, ball milling, isostatic pressing, sintering, slice；Using 200 mesh silk screens in capacitance ceramic substrate
Two surface printing silver pastes；High temperature sintering is carried out using net strip sintering furnace, the temperature of high temperature sintering is 850~870 DEG C, preferably
850 DEG C, sintering frequency is 25 ± 5Hz, and the sintered heat insulating time is 15 minutes；In the thickness of two surface printing silver layer of capacitance ceramic substrate
Degree is 5~7 microns, and specially 5 microns.
S2: titanium tungsten layer 32, layers of copper are successively sputtered on the silver layer 31 on a surface of the capacitance ceramic substrate that step S1 is obtained
33 and layer gold 34；Specifically includes the following steps:
S21: primary cleaning:
The capacitance ceramic substrate obtained using cleaning solution processing step S1 reuses ultrasonic drilling machine cleaning, scavenging period are as follows:
It 5 ± 1 minutes, then dries, drying temperature are as follows: 100 ± 5 DEG C, drying time are as follows: 30 ± 5 minutes.
S22: secondary cleaning:
The capacitance ceramic substrate that step S21 is once cleaned is put into plasma cleaner and carries out secondary cleaning, clearly
Wash the time are as follows: 5 ± 1 minutes, drying temperature are as follows: 100 ± 5 DEG C, drying time are as follows: 30 ± 5 minutes, while activating surface.
S23: sputtering titanium tungsten layer 32:
Vacuum sputtering film plating machine is first evacuated down to processing range, is re-filled with argon gas as working gas, with titanium and tungsten
Mass ratio is the titanium-tungsten of 1:9 as target, under electric field action, Ar+Accelerate bombardment target, target atom is splashed to step
On the capacitance ceramic substrate that rapid S22 is obtained, one layer of titanium tungsten layer is sputtered on 31 surface of capacitance ceramic substrate one layer of silver layer therein
32, it sputters with a thickness of 0.1~0.15 micron.
S24: sputtering layers of copper 33:
Vacuum sputtering film plating machine is first evacuated down to processing range, is re-filled with argon gas as working gas, using copper as target
Material, under electric field action, Ar+Accelerate bombardment target, target atom be splashed on the capacitance ceramic substrate that step S23 is obtained,
One layer of layers of copper 33 is sputtered on 32 surface of titanium tungsten layer that step 23 obtains, and is sputtered with a thickness of 0.1~0.2 micron.
S25: sputtering layer gold 34:
Vacuum sputtering film plating machine is first evacuated down to processing range, is re-filled with argon gas as working gas, using gold as target
Material, under electric field action, Ar+Accelerate bombardment target, target atom be splashed on the capacitance ceramic substrate that step S23 is obtained,
One layer of layer gold 34 is sputtered on 33 surface of layers of copper that step 24 obtains, and is sputtered with a thickness of 0.25~0.55 micron.
S3: calculating the size of one single chip capacitor according to the capacitor of required chip capacity, then utilizes semiconductor
Sand-wheel slice cutting machine carries out cutting-up to the capacitance ceramic substrate that step S2 is obtained, and obtains the single chip capacity.
S4: testing, sorting:
Volume test is carried out one by one to the chip capacity that step S3 is produced in batches using LCR bridge test instrument 4, it will not
The product selecting for meeting capacity requirement range, which comes out, carries out downgrade processing.
To the chip capacity of existing two-sided silver electrode and the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant of the invention into
Row cooling thermal impact comparative test, high temperature ageing comparative test and bonding (bonding) comparative test, the size of test specimen are 1.15*
1.15*0.50mm, capacitor C=200pF ± 10% are lost (DF): < 100*10-4, insulate (IR): > 10*1010Ohm.
(1) chip capacity sample cooling thermal impact comparative test: is placed in 3 minutes → air at room temperature environment in 100 DEG C of boiled water
In 3 minutes in 1 minute → 0 DEG C ice water, successively carry out 1000 circulations.The capacitor of detection test front and back sample, and calculate capacitor
Change rate.Cooling thermal impact comparative test result is shown in Table one:
One cooling thermal impact comparative test result of table
(2) high temperature ageing comparative test: chip capacity sample being placed under 200 ± 5 DEG C of baking oven aging 1000 hours, inspection
The capacitor of front and back sample is tested in test, and calculates rate of change of capacitance.High temperature ageing comparative test result is shown in Table two:
Two high temperature ageing comparative test result of table
(3) bonding (bonding) comparative test: after chip capacity sample is welded on circuit boards by tin cream Reflow Soldering,
It is bonded with the aluminum steel of line footpath 1mil with the surface electrode of chip capacity sample, bonding force 20g, bonding time 5ms, after bonding
Bond-pull is tested using bond strength tester, unit is gram force (g).Bonding (bonding) comparative test result is shown in Table three:
Three bonding of table (bonding) comparative test result
By above-mentioned test result as it can be seen that two-sided Heterogeneous Composite electrode chip capacitor of the invention is after cold shock testing
Capacitance Shift Rate maximum be only 0.12%, and the Capacitance Shift Rate of the chip capacity of two-sided silver electrode is up to 1.41%, says
Its bright cold-and-heat resistent impact is far superior to the chip capacity of two-sided silver electrode；
The Capacitance Shift Rate of two-sided Heterogeneous Composite electrode chip capacitor of the invention after 200 DEG C of high-temperature circulation tests is maximum
Only 0.17%, and the Capacitance Shift Rate of the chip capacity of two-sided silver electrode is up to 2.28%, illustrates that its high temperature resistance is bright
The aobvious chip capacity better than two-sided silver electrode；
Simultaneously as the bottom-side electrodes that silver layer, titanium tungsten layer, layers of copper and layer gold are laminated efficiently solve tin cream reflux
It welds generated sn-ag alloy phenomenon and eats silver-colored phenomenon, therefore chip capacity of the invention and the better solder bond of circuit board,
There is no because chip capacity eats silver cause chip capacity to separate and loosen with circuit board the phenomenon that；Pair of the invention as a result,
Face Heterogeneous Composite electrode chip capacitor and aluminum wire bonding intensity are higher, and bond-pull is greater than standard value 4g, reach as high as 6.9g,
Bonding performance is also significantly better than the chip capacity of two-sided silver electrode.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.
Claims (10)
1. a kind of two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant, including capacitance ceramic substrate, surface electrode and bottom-side electrodes,
The surface electrode and bottom-side electrodes are respectively arranged on two surfaces of the capacitance ceramic substrate, it is characterised in that: the surface
Electrode is silver layer, and the bottom-side electrodes are by silver layer, titanium tungsten layer, layers of copper and layer gold from inside to outside successively in capacitance ceramic upper substrate layer
It is folded to form.
2. the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 1, it is characterised in that: the bottom surface electricity
In extremely, the silver layer with a thickness of 5~7 microns, the titanium tungsten layer with a thickness of 0.1~0.15 micron, the thickness of the layers of copper
Be 0.1~0.2 micron, the layer gold with a thickness of 0.25~0.55 micron.
3. the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 1, it is characterised in that: the bottom surface electricity
In the titanium tungsten layer of pole, the mass ratio of titanium and tungsten is 1:9.
4. the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 1, it is characterised in that: the surface electricity
The silver thickness of pole is 5~7 microns.
5. the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 1, it is characterised in that: the surface electricity
The silver layer of pole and the silver layer of bottom-side electrodes are by way of printing silver paste and high temperature sintering on the capacitance ceramic substrate
It is formed；Titanium tungsten layer, layers of copper and the layer gold of the bottom-side electrodes are formed using sputtering method.
6. the preparation method of the two-sided Heterogeneous Composite electrode chip capacitor of the high temperature resistant of any one of claim 1-5, it is characterised in that:
Include the following steps: to set gradually silver layer, titanium tungsten layer, layers of copper and layer gold on a surface of the capacitance ceramic substrate of sheet, and
Silver layer is set on another surface of the capacitance ceramic substrate, then by the capacitance ceramic substrate be cut into it is single described in
Chip capacity.
7. the preparation method of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 6, it is characterised in that:
Include the following steps:
S1: printing silver paste on two surface of capacitance ceramic substrate of sheet respectively, then carry out high temperature sintering, obtains two surfaces point
It is not printed with the capacitance ceramic substrate of one layer of silver layer；
S2: titanium tungsten layer, layers of copper and layer gold are successively sputtered on the silver layer on a surface of the capacitance ceramic substrate that step S1 is obtained；
S3: calculating the size of one single chip capacitor according to the capacitor of required chip capacity, then obtains to step S2
Capacitance ceramic substrate carries out cutting-up, obtains the single chip capacity.
8. the preparation method of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 7, it is characterised in that:
In step S1, the temperature of high temperature sintering is 850~870 DEG C, and the sintered heat insulating time is 15 minutes.
9. the preparation method of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 7, it is characterised in that:
In step S2, using vacuum sputtering film plating machine in argon gas as successively sputtering titanium tungsten layer, layers of copper and gold under conditions of working gas
Layer.
10. the preparation method of the two-sided Heterogeneous Composite electrode chip capacitor of high temperature resistant according to claim 7, feature exist
In: in step S2, capacitance ceramic substrate is put into plasma cleaner before sputtering and is cleaned, and activating surface.
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| CN111180203A (en) * | 2019-12-31 | 2020-05-19 | 广东爱晟电子科技有限公司 | High-precision and high-reliability Ir-Cu-Au composite electrode chip capacitor |
| WO2020134014A1 (en) * | 2018-12-28 | 2020-07-02 | 肇庆鼎晟电子科技有限公司 | High temperature-resistant dual-sided heterogeneous combined electrode thermosensitive chip |
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| CN106298120A (en) * | 2016-08-30 | 2017-01-04 | 广东爱晟电子科技有限公司 | Highly reliable titanium tungsten gold electrode chip of a kind of high accuracy and preparation method thereof |
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| US20050118440A1 (en) * | 2001-12-28 | 2005-06-02 | Mahon Peter J. | Electrode for an energy storage device |
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