CN109704776A - The orientation passage of heat construction method of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond - Google Patents
The orientation passage of heat construction method of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond Download PDFInfo
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- CN109704776A CN109704776A CN201910083453.8A CN201910083453A CN109704776A CN 109704776 A CN109704776 A CN 109704776A CN 201910083453 A CN201910083453 A CN 201910083453A CN 109704776 A CN109704776 A CN 109704776A
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Abstract
The present invention relates to a kind of orientation passage of heat construction method of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond, step is porous preform preparation, slurry preparation, laser boring, impregnating slurry, resin solidification cracking and liquid silicon infiltration.Technical solution provided by the present invention can prepare mechanical property and the good SiC-CMC of thermal conductivity.Moreover, the method using laser boring introduces three-dimensional thermal conductivity access, the micro-structure of this method and the designability of material property are embodied, provides certain thinking and process to develop the preparation of highly thermally conductive SiC-CMC.The thermal conductivity of the carbon/silicon carbide ceramic matrix composite thickness direction prepared in this way is expected to improve 10~20 times on the original basis, show good heat transference efficiency, heat transmission can be effectively carried out, prevents from concentrating the damage and failure for leading to material by heat.
Description
Technical field
The invention belongs to field of compound material, it is related to a kind of modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond
Orientation passage of heat construction method.
Background technique
Continuous fiber reinforcement carborundum based material (SiC-CMC) because its height than by force, Gao Bimo, anti-oxidant, high temperature resistant,
The advantages that and low-density insensitive to crackle and in aerospace, nuclear energy, high speed brake, the fields such as heat exchanger with huge
Application potential.But with the raising of aeronautical and space technology development and industrial production technology, the demand to SiC-CMC performance is also more next
It is higher.This requires SiC-CMC under the premise of guaranteeing certain mechanical property, develops its functionality, improves the thermally conductive, conductive of its
With electromagnetic shielding etc. performances.
As the high temperature thermal structure material of a new generation, the thermophysical property of material directly decides that can it adapt to its work
The temperature change of environment.Thermal conductivity will affect the heat transfer rate of component at high temperature, if the distribution of material heat is uniform,
Can be effectively prevented from due to temperature difference lead to problems such as everywhere in size distortion is inconsistent, appearance of micro-crack, thus anti-
Only material bearing capacity and its high-temperature behavior decline.The current method for improving thickness of composite material direction thermal conductivity mainly has 4 kinds:
(1) the thermal conductivity access of thickness direction is established；(2) high thermal conductivity phase is introduced；(3) optimize interface, reduce interface resistance to reduce phonon
Scattering；(4) crystallite dimension is improved to improve phonon transmitting free path.
Document " Chen L, Yang X, Su, Zhe ' an, et al.Fabrication and performance of
micro-diamond modified C/SiC composites via precursor impregnation and
In pyrolysis process [J] .Ceramics International, 2018:S0272884218304991. ", Chen etc.
Micron-sized Diamond is introduced into C/SiC composite material by people using vacuum impregnation and precursor infiltration and pyrolysis (PIP) technique
C/SiC-Diamond composite material is prepared, thermal conductivity has reached 3.594W/ (mK), compared to same process preparation
The thermal coefficient of C/SiC composite material, C/SiC-Diamond composite material improves 33.7%.Document " S.Chen, Y.Feng,
M.Qin,T.Ji,W.Feng.Improving thermal conductivity in the through-thickness
direction of carbon fibre/SiC composites by growing vertically aligned carbon
Nanotubes [J] .Carbon, 2017, in 116:84-93 ", Chen et al. is using the method for chemical vapor deposition (CVD) pre-
Carbon fiber surface growth of vertical is in the aligned carbon nanotube (VACNTs) of fiber alignment after processing, to prepare VACNTs-CfEnhancing
SiC based composites.Since CNTs forms thermal conducting path, VACNTs-C in a thickness directionfThe thermal coefficient of/SiC reaches
16.8W/ (mK), hence it is evident that be higher than C/SiC composite material.Above-mentioned two documents all improve the heat of composite material to some extent
Conductance.But thermal conductivity promotion amplitude is smaller in first document, PIP process cycle is longer, prepares SiC matrix size brief summary
Brilliant degree is low, and phonon is in the free path very little wherein transmitted；Fiber can be pre-processed before latter document deposition VACNTs, this
Its performance of damage influence can be generated to fiber, and CVD process deposits VACNTs is complex and process repeatability is poor.And patent
Number: it is processed for the first time using ultra-short pulse laser in ZL201510846880.9 and CVI technique is assisted to prepare ceramic matric composite,
The consistency and mechanical property for making material are significantly improved.This method tool that through-hole is constructed by laser opening method
There are designability and novelty, but inventor is only above set in terms of densifying with mechanical property with laser processing to optimize
Meter, is not applied to it in micro-structure optimization design of highly thermally conductive ceramic matric composite.
Summary of the invention
Technical problems to be solved
In order to avoid the shortcomings of the prior art, the present invention proposes a kind of modified carbon/silicon carbide ceramic matrix of high heat-conductive diamond
The orientation passage of heat construction method of composite material
Technical solution
A kind of orientation passage of heat construction method of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond, feature
It is that steps are as follows:
The preparation of step 1. carbon/silicon carbide ceramic matrix composite SiC-CMC porous preform: chemical vapor infiltration CVI work is used
Skill deposits pyrolytic carbon PyC or the interface boron nitride BN on molding fiber preform, interface with a thickness of 100~
Then 500nm prepares SiC matrix using CVI or polymer infiltration and pyrolysis PIP technique again, the density of precast body is made to reach 1.3
~1.5g/cm3；
Step 2. slurry preparation: the phenol resin solution that dose volume score is 10~50wt.% is as solvent and mainly
The micron order diamond powder that volume fraction is 1~10vol.% is then added in phenol resin solution, will mix by carbon source
Solution carries out the magnetic agitation of 30~60min, carries out the ultrasonic disperse of 30~60min after having stirred again, and it is equal finally to obtain dispersion
Even phenolic resin, diamond slurry；
Step 3. laser opening: using femtosecond laser process to the SiC-CMC of half densification prepared by step 1
Thickness direction introduces aperture, and aperture is greater than the 3/1 of material thickness, and wherein pitch of holes is greater than or equal to aperture；
Obtaining after being cleaned by ultrasonic after aperture to material, being dried has the porous SiC-CMC of directional heat guiding path prefabricated
Body；
Step 4. impregnating slurry:
The first step carries out vacuum impregnation: porous SiC-CMC precast body being put into glass drying basin first, is evacuated to device
Pressure is -0.085~-0.096MPa in ware, and precast body is immersed into slurry after 15~30min of holding and keeps 20~40min；
Second step carries out pressure impregnation: slurry is put into closed container together with precast body and is forced into 0.7~0.9MPa, and
It is taken out after keeping 20~40min, precast body surface is dried and dried；
This step carries out multiple circulating vacuum dipping combination pressure dipping；
Step 5. solidifies cracking: the porous SiC-CMC precast body after dipping sizing agent being put into tube furnace, argon gas work is passed through
For protective gas, the solidification of phenolic resin, 1~3h of curing time are first carried out at 150~200 DEG C；Then right at 900~1200 DEG C
Phenolic resin is cracked, 2~5h of pyrolysis time；
Step 6. liquid silicon infiltration: will solidify the Si powder of the porous SiC-CMC precast body after cracking and wrap up, outermost layer graphite
Paper bag is pricked, and the precast body for being enclosed with Si powder is put into infiltration Si furnace carries out liquid silicon infiltration under 1500~1700 DEG C of vacuum environments later
Saturating 10~90min, the orientation passage of heat for completing the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond construct preparation.
The particle size range of the diamond is 1~20 μm.
The step 4 more times circulation 3~5 times.
The operating mode of ultrasonic disperse instrument is ultrasound 1s, gap 2s in the step 2.
The diameter in the hole is 0.3~1.0mm.
Beneficial effect
A kind of orientation passage of heat structure of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond proposed by the present invention
Building method, step are that porous preform preparation, slurry preparation, laser boring, impregnating slurry, resin solidification cracking and liquid silicon seep
Thoroughly.Technical solution provided by the present invention can prepare mechanical property and the good SiC-CMC of thermal conductivity.Moreover, using laser
The method of punching introduces three-dimensional thermal conductivity access, embodies the micro-structure of this method and the designability of material property, for development
The preparation of highly thermally conductive SiC-CMC provides certain thinking and process.The carbon/silicon carbide ceramic matrix prepared in this way
The thermal conductivity in thickness of composite material direction is expected to improve 10~20 times on the original basis, shows good heat transmitting effect
Rate can effectively carry out heat transmission, prevent from concentrating the damage and failure for leading to material by heat.
Beneficial effects of the present invention have the following:
(1) using phenolic resin, diamond solution as dipping sizing agent, one can be formed in diamond surface after solidification cracking
Layer amorphous carbon film can play the wetability for reducing molten silicon to the erosion of diamond surface and raising liquid silicon and diamond
Effect, and preparation method is simple, raw material is easy to get.
(2) diamond slurry is introduced using the method for vacuum impregnation combination pressure dipping, more gold can be being introduced
It avoids causing in slurry and sample there are air while hard rock internal in the presence of hole of holding one's breath.
(3) carrying out solidifying after impregnating cracking can make phenolic resin be cracked into carbon of the agraphitic carbon as liquid silicon infiltration when
Source, while the channel for generating gas when cracking and generating provides channel for the infiltration of liquid silicon.
(4) aperture is carried out using the SiC-CMC that femtosecond laser process half-and-half densifies, to construct orientation thermal conductivity
Access is conducive to the consistency of material and the raising of thermal conductivity.There are designabilities for laser boring simultaneously, can pass through laser
Punching design is various to have certain orientation structure, so that the performance to material is designed.
SiC-CMC is densified using RMI method, the sample of RMI technique preparation is compared to prepared by CVI and PIP technique
Sample it is finer and close, and RMI technique preparation SiC matrix crystallite dimension it is big, the diffusion free path of phonon is larger, is conducive to
Improve the heat transference efficiency of material.
Detailed description of the invention
Fig. 1: the process flow chart of C/SiC-Diamond composite material is prepared
Fig. 2: the punching schematic diagram (thermal conductivity disk) of composite material
Fig. 3: the punching schematic diagram (mechanics sample) of composite material
Specific embodiment
Now in conjunction with embodiment, attached drawing, the invention will be further described:
Diamond has excellent thermophysical property, and thermal coefficient is about 2200W/ (mK), and diamond surface stone
Inkization temperature is at 1700 DEG C or so, and complete graphitization temperature is at 1800 DEG C or so.Therefore, in order to greatly improve leading for composite material
Hot, this experiment is chosen diamond and is mutually introduced into the matrix of SiC-CMC as high thermal conductivity.Meanwhile being existed by laser boring technique
Diamond slurry to construct directional heat guiding path, then is introduced into thermal conductivity by vacuum-impregnated method by thickness direction aperture
In access.Densification process chooses liquid silicon infiltration (RMI) technique, because RMI technique is also to improve the thermally conductive system of ceramic composite
The SiC crystal grain of several effective ways, the preparation of RMI method is larger, and mean free path of phonons increases, and the liquid silicon melted can be with gold
Hard rock is reacted to form strong interface cohesion, to reduce interface resistance.
Thickness direction using laser boring in half fine and close SiC-CMC introduces thermal conductivity channel, then is combined with vacuum impregnation
The method of pressure impregnation introduces phenolic resin, diamond slurry in directional heat guiding path, carries out solidification to sample after drying and splits
Solution finally densifies sample using RMI method, and steps are as follows:
The preparation of step 1. carbon/silicon carbide ceramic matrix composite porous preform: existed using chemical vapor infiltration (CVI) technique
Deposit the interface pyrolytic carbon (PyC) or boron nitride (BN) on molding fiber preform, interface with a thickness of 100~
Then 500nm prepares SiC matrix using the techniques such as CVI or polymer infiltration and pyrolysis (PIP) again, reaches the density of precast body
To 1.3~1.5g/cm3。
Step 2. slurry preparation: the phenol resin solution that dose volume score is 10~50wt.% is as solvent and mainly
The micron order diamond powder that volume fraction is 1~10vol.% is then added in phenol resin solution by carbon source, wherein gold
The particle size range of hard rock is 1~20 μm.The magnetic agitation that mixed solution is then carried out to 30~60min, carries out again after having stirred
The ultrasonic disperse of 30~60min finally obtains finely dispersed phenolic resin, diamond slurry.
Step 3. laser opening: the thickness direction of the SiC-CMC half-and-half densified using femtosecond laser process is introduced
Aperture is the channel of 0.3~1.0mm, and wherein pitch of holes need to be more than or equal to aperture.Sample is cleaned by ultrasonic after aperture, is dried
Porous SiC-CMC the precast body with directional heat guiding path is obtained afterwards.
Step 4. impregnating slurry: impregnating slurry processing is divided into vacuum impregnation and two step of pressure impregnation carries out: first will be porous
SiC-CMC precast body is put into glass drying basin, and being evacuated in vessel pressure is -0.085~-0.096MPa, keep 15~
Precast body is immersed into 20~40min of holding in slurry after 30min.Slurry is put into closed container together with precast body then and is added
It is depressed into 0.7~0.9MPa, and is taken out after keeping 20~40min, precast body surface is dried and dried.It is as much as possible to guarantee
Diamond is introduced, 3~5 circulating vacuum dipping combination pressure dippings can be carried out.
Step 5. solidifies cracking: the porous SiC-CMC precast body sample after dipping sizing agent being put into tube furnace, argon is passed through
Gas first carries out the solidification of phenolic resin, 1~3h of curing time as protective gas at 150~200 DEG C.Then 900~1200
DEG C phenolic resin is cracked, 2~5h of pyrolysis time.
Step 6. liquid silicon infiltration: the Si powder of the porous SiC-CMC precast body sample after cracking will be solidified and wrapped up, outermost layer is used
The precast body for being enclosed with Si powder is put into infiltration Si furnace carries out liquid under 1500~1700 DEG C of vacuum environments later by graphite paper wrapping
10~90min of silicon infiltration completes the preparation of sample.
Specific embodiment:
Embodiment 1.
The preparation of C/SiC-Diamond thermal conductivity sample:
The preparation of step 1.C/SiC porous preform: it is sunk in molding T700 carbon fiber precast body using CVI technique
Then product prepares SiC matrix using CVI technique again, makes the density 1.5g/ of composite material with a thickness of the interface PyC of 200nm
cm3。
Step 2. slurry preparation: dose volume score is the phenol resin solution of 10wt.% as solvent and primary carbon source,
Then 1 μm of diadust that volume fraction is 8vol.% is added in phenol resin solution.Then mixed solution is carried out
The magnetic agitation of 30min, carries out the ultrasonic disperse of 30min again after having stirred, finally obtain finely dispersed phenolic resin, Buddha's warrior attendant
Stone slurry.
The processing of step 3. thermal conductivity sample: deposition to half fine and close C/SiC composite material is passed through into numerical control processing into size
For 12.7 × 3mm of Φ3Thermal conductivity disk.
Step 4. laser opening: introducing aperture using thickness direction of the femtosecond laser process to thermal conductivity disk is
The channel of 0.5mm, wherein pitch of holes is 1.5mm.Obtaining after being cleaned by ultrasonic after aperture to sample, being dried has orientation through-hole
Porous C/SiC thermal conductivity disk precast body.
Step 5. impregnating slurry: porous C/SiC precast body is put into glass drying basin first, is evacuated to vessel internal pressure
Power is lower than -0.09MPa, and precast body is immersed into slurry after holding 15min and keeps 30min.Then by slurry together with precast body
It is put into closed container and is forced into 0.8MPa, and taken out after keeping 30min, precast body surface is dried and dried.It carries out 5 times altogether
Circulating vacuum dipping combination pressure dipping, with guarantee introduce sufficient amount diamond.
Step 6. solidifies cracking: the porous C after dipping sizing agent/SiC precast body sample being put into tube furnace, argon gas is passed through
As protective gas, the solidification of phenolic resin, curing time 2h are first carried out at 150 DEG C.Then phenolic resin is carried out at 900 DEG C
Cracking, pyrolysis time 2h.
Step 7. liquid silicon infiltration: will solidify the Si powder of porous C/SiC precast body sample after cracking and wrap up, outermost layer stone
Black paper bag is pricked, and the precast body for being enclosed with Si powder is put into infiltration Si furnace carries out liquid silicon infiltration under 1600 DEG C of vacuum environments later
60min completes the preparation of sample.
Embodiment 2.
The preparation of C/SiC-Diamond mechanics sample:
The preparation of step 1.C/SiC porous preform: it is sunk in molding T700 carbon fiber precast body using CVI technique
The interface PyC of product about 200nm thickness, then prepares SiC matrix using CVI technique again, makes the density 1.5g/cm of composite material3。
Step 2. slurry preparation: dose volume score is the phenol resin solution of 10wt.% as solvent and primary carbon source,
Then 1 μm of diadust that volume fraction is 8vol.% is added in phenol resin solution.Then mixed solution is carried out
The magnetic agitation of 30min, carries out the ultrasonic disperse of 30min again after having stirred, finally obtain finely dispersed phenolic resin, Buddha's warrior attendant
Stone slurry.
The processing of step 3. mechanics sample: deposition to half fine and close C/SiC composite material is passed through into numerical control processing into size
For 40 × 5 × 3mm3Mechanics sample.
Step 4. laser opening: introducing aperture using thickness direction of the femtosecond laser process to mechanics sample is
The channel of 0.5mm, wherein pitch of holes is 1.5mm.Obtaining after being cleaned by ultrasonic after aperture to sample, being dried has orientation through-hole
Porous C/SiC mechanics sample precast body.
Step 5. impregnating slurry: porous C/SiC precast body is put into glass drying basin first, is evacuated to vessel internal pressure
Power is lower than -0.09MPa, and precast body is immersed into slurry after holding 15min and keeps 30min.Then by slurry together with precast body
It is put into closed container and is forced into 0.8MPa, and taken out after keeping 30min, precast body surface is dried and dried.It carries out 5 times altogether
Circulating vacuum dipping combination pressure dipping, with guarantee introduce sufficient amount diamond.
Step 6. solidifies cracking: the porous C after dipping sizing agent/SiC precast body sample being put into tube furnace, argon gas is passed through
As protective gas, the solidification of phenolic resin, curing time 2h are first carried out at 150 DEG C.Then phenolic resin is carried out at 900 DEG C
Cracking, pyrolysis time 2h.
Step 7. liquid silicon infiltration: will solidify the Si powder of porous C/SiC precast body sample after cracking and wrap up, outermost layer stone
Black paper bag is pricked, and the precast body for being enclosed with Si powder is put into infiltration Si furnace carries out liquid silicon infiltration under 1600 DEG C of vacuum environments later
60min completes the preparation of sample.
Embodiment 3.
The preparation of C/SiC-Diamond thermal expansion sample:
The preparation of step 1.C/SiC porous preform: it is sunk in molding T700 carbon fiber precast body using CVI technique
The interface PyC of product about 200nm thickness, then prepares SiC matrix using CVI technique again, makes the density 1.5g/cm of composite material3。
Step 2. slurry preparation: dose volume score is the phenol resin solution of 10wt.% as solvent and primary carbon source,
Then 1 μm of diadust that volume fraction is 8vol.% is added in phenol resin solution.Then mixed solution is carried out
The magnetic agitation of 30min, carries out the ultrasonic disperse of 30min again after having stirred, finally obtain finely dispersed phenolic resin, Buddha's warrior attendant
Stone slurry.
The processing of step 3. thermal expansion sample: deposition to half fine and close C/SiC composite material is passed through into numerical control processing into ruler
Very little is 25 × 5 × 3mm3Thermal expansion sample.
Step 4. laser opening: introducing aperture using thickness direction of the femtosecond laser process to thermal expansion sample is
The channel of 0.5mm, wherein pitch of holes is 1.5mm, and obtaining after being cleaned by ultrasonic after aperture to sample, being dried has orientation through-hole
Porous C/SiC thermal expansion sample precast body.
Step 5. impregnating slurry: porous C/SiC precast body is put into glass drying basin first, is evacuated to vessel internal pressure
Power is lower than -0.09MPa, and precast body is immersed into slurry after holding 15min and keeps 30min.Then by slurry together with precast body
It is put into closed container and is forced into 0.8MPa, and taken out after keeping 30min, precast body surface is dried and dried.It carries out 5 times altogether
Circulating vacuum dipping combination pressure dipping, with guarantee introduce sufficient amount diamond.
Step 6. solidifies cracking: the porous C after dipping sizing agent/SiC precast body sample being put into tube furnace, argon gas is passed through
As protective gas, the solidification of phenolic resin, curing time 2h are first carried out at 150 DEG C.Then phenolic resin is carried out at 900 DEG C
Cracking, pyrolysis time 2h.
Step 7. liquid silicon infiltration: will solidify the Si powder of porous C/SiC precast body sample after cracking and wrap up, outermost layer stone
Black paper bag is pricked, and the precast body for being enclosed with Si powder is put into infiltration Si furnace carries out liquid silicon infiltration under 1600 DEG C of vacuum environments later
60min completes the preparation of sample.
Claims (5)
1. a kind of orientation passage of heat construction method of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond, feature exist
In steps are as follows:
The preparation of step 1. carbon/silicon carbide ceramic matrix composite SiC-CMC porous preform: existed using chemical vapor infiltration CVI technique
Deposit pyrolytic carbon PyC or the interface boron nitride BN on molding fiber preform, interface with a thickness of 100~500nm,
Then SiC matrix is prepared using CVI or polymer infiltration and pyrolysis PIP technique again, make the density of precast body reach 1.3~
1.5g/cm3；
Step 2. slurry preparation: dose volume score is the phenol resin solution of 10~50wt.% as solvent and primary carbon source,
Then the micron order diamond powder that volume fraction is 1~10vol.% is added in phenol resin solution, by mixed solution
The magnetic agitation for carrying out 30~60min, carries out the ultrasonic disperse of 30~60min again, finally obtains finely dispersed after having stirred
Phenolic resin, diamond slurry；
Step 3. laser opening: using femtosecond laser process to the thickness of the SiC-CMC of half densification prepared by step 1
Direction introduces aperture, and aperture is greater than the 3/1 of material thickness, and wherein pitch of holes is greater than or equal to aperture；
Porous SiC-CMC the precast body with directional heat guiding path is obtained after being cleaned by ultrasonic after aperture to material, being dried；
Step 4. impregnating slurry:
The first step carries out vacuum impregnation: porous SiC-CMC precast body being put into glass drying basin first, is evacuated in vessel
Pressure is -0.085~-0.096MPa, and precast body is immersed into slurry after 15~30min of holding and keeps 20~40min；
Second step carries out pressure impregnation: slurry being put into closed container together with precast body and is forced into 0.7~0.9MPa, and is kept
It is taken out after 20~40min, precast body surface is dried and dried；
This step carries out multiple circulating vacuum dipping combination pressure dipping；
Step 5. solidifies cracking: the porous SiC-CMC precast body after dipping sizing agent being put into tube furnace, is passed through argon gas as guarantor
Gas is protected, the solidification of phenolic resin, 1~3h of curing time are first carried out at 150~200 DEG C；Then at 900~1200 DEG C to phenolic aldehyde
Resin is cracked, 2~5h of pyrolysis time；
Step 6. liquid silicon infiltration: will solidify the Si powder of the porous SiC-CMC precast body after cracking and wrap up, outermost layer graphite paper bag
It pricks, the precast body for being enclosed with Si powder is put into infiltration Si furnace carries out liquid silicon infiltration 10 under 1500~1700 DEG C of vacuum environments later
~90min, the orientation passage of heat for completing the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond construct preparation.
2. the orientation passage of heat of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond is constructed according to claim 1
Method, it is characterised in that: the particle size range of the diamond is 1~20 μm.
3. the orientation passage of heat of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond is constructed according to claim 1
Method, it is characterised in that: the step 4 more times circulation 3~5 times.
4. the orientation passage of heat of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond is constructed according to claim 1
Method, it is characterised in that: the operating mode of ultrasonic disperse instrument is ultrasound 1s, gap 2s in the step 2.
5. the orientation passage of heat of the modified carbon/silicon carbide ceramic matrix composite of high heat-conductive diamond is constructed according to claim 1
Method, it is characterised in that: the diameter in the hole is 0.3~1.0mm.
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| CN111365393A (en) * | 2020-03-31 | 2020-07-03 | 西安理工大学 | Preparation method of directional heat-conducting wear-resistant composite brake material |
| CN112266262A (en) * | 2020-11-04 | 2021-01-26 | 兰州理工大学 | Novel C/C-SiC composite material and preparation method thereof |
| CN116444286A (en) * | 2023-01-30 | 2023-07-18 | 合肥富维康新材料科技有限公司 | Method for improving melt siliconizing uniformity of MI-SiC-SiC preform |
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| CN116444286A (en) * | 2023-01-30 | 2023-07-18 | 合肥富维康新材料科技有限公司 | Method for improving melt siliconizing uniformity of MI-SiC-SiC preform |
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