CN109698648B - Motor drive circuit and motor - Google Patents
Motor drive circuit and motor Download PDFInfo
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- CN109698648B CN109698648B CN201710765422.1A CN201710765422A CN109698648B CN 109698648 B CN109698648 B CN 109698648B CN 201710765422 A CN201710765422 A CN 201710765422A CN 109698648 B CN109698648 B CN 109698648B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/20—Arrangements for starting
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P29/00—Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors
- H02P29/02—Providing protection against overload without automatic interruption of supply
- H02P29/024—Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load
- H02P29/0241—Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load the fault being an overvoltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/24—Arrangements for stopping
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Abstract
The present disclosure provides a motor driving circuit and a motor to solve the problem that a motor driving circuit in the related art forms a peak voltage of a drain electrode when a MOS transistor is turned off. The motor driving circuit is connected to a spike voltage suppression unit 130 through a drain electrode of a low-side MOS tube Qi2 of the ith phase of the motor driving circuit, wherein the spike voltage suppression unit 130 comprises a capacitor Ci1, an inductor Li1, a diode Di1 and a diode Di 2. When the low-side MOS tube Qi2 is turned off, part of the current flowing through the ith inductive winding load charges a capacitor Ci1 connected with the drain electrode of the low-side MOS tube Qi 2; when the low-side MOS transistor Qi2 is turned on next time, the capacitor Ci1, the inductor Li1 and the diode Di2 in the spike voltage suppression unit 130 form an oscillator circuit, and a current generated by discharging the capacitor Ci1 flows through the oscillator circuit and then through the diode Di1 to the power bus Vbus.
Description
Technical Field
The present disclosure relates to the field of power electronics, and in particular, to a motor drive circuit and a motor.
Background
At present, in a drive circuit of a motor, a MOS transistor is generally used as a switching element. Specifically, the PWM control terminal sequentially controls the on/off of the high-side MOS transistor or the low-side MOS transistor of each phase of the motor driving circuit according to a certain control logic, so as to control the working voltage or current of the load winding of each phase.
Taking one phase of the star-connected three-phase sensorless brushless direct current motor as an example, one end of the load winding of the phase is connected with the other two load windings, and the other end is connected with the source electrode of the high-side MOS tube and the drain electrode of the low-side MOS tube. When the high side MOS tube of the phase is turned off and the low side MOS tube is turned on, the current flows through the low side MOS tube through the load winding and then flows back to the power supply. If the PWM control terminal controls the turn-off of the low-side MOS transistor, at the instant of turning off the low-side MOS transistor, a peak voltage is formed at the drain of the low-side MOS transistor due to the inductive property of the load winding to prevent the current in the line from changing. The excessive peak voltage accelerates the loss of the MOS tube, and even breaks down the MOS tube to cause the motor failure.
Disclosure of Invention
The present disclosure provides a motor driving circuit and a motor to solve the problem that a motor driving circuit in the related art forms a peak voltage of a drain electrode when a MOS transistor is turned off.
In order to achieve the above object, a first aspect of the present disclosure provides a motor driving circuit, which includes N phase driving modules, where N is a positive integer greater than 0 and less than or equal to M, and M is the number of phases of the motor;
the ith phase driving module 100 includes a high side driving unit 110, a low side driving unit 120, and a spike voltage suppressing unit 130, where i is a positive integer greater than 0 and less than or equal to N;
the high side driving unit 110 comprises a high side MOS transistor Qi 1;
the grid electrode of the high-side MOS tube Qi1 is used for connecting a control end Vi1, the drain electrode of the high-side MOS tube Qi1 is used for connecting a power bus Vbus, and the source electrode of the high-side MOS tube Qi1 is used for connecting the ith load winding of the motor;
the low side driving unit 120 further includes a low side MOS transistor Qi 2;
the grid electrode of the low-side MOS tube Qi2 is used for connecting a control end Vi2, the drain electrode of the low-side MOS tube Qi2 is used for connecting the ith load winding of the motor, and the source electrode of the low-side MOS tube Qi2 is used for grounding;
the spike voltage suppression unit 130 comprises a capacitor Ci1, an inductor Li1, a diode Di1, and a diode Di 2;
a first end of the capacitor Ci1 is connected to the drain of the low-side MOS transistor Qi2, and a second end of the capacitor Ci1 is connected to the anode of the diode Di 1; the first end of the inductor Li1 is connected with the source electrode of the low-side MOS tube Qi2, and the second end of the inductor Li1 is connected with the anode of the diode Di 2; the cathode of the diode Di2 is connected with the anode of the diode Di 1; the cathode of the diode Di1 is used to connect the power bus Vbus.
Optionally, the high-side driving unit 110 further includes a high-side gate current dropping unit 111, where the high-side gate current dropping unit 111 includes a diode Di3 and a transistor Ti 1;
the base electrode of the triode Ti1 is used for being connected with the control end Vi1, the emitter electrode of the triode Ti1 is connected with the grid electrode of the high-side MOS tube Qi1, and the collector electrode of the triode Ti1 is connected with the source electrode of the high-side MOS tube Qi 1;
the anode of the diode Di3 is connected with the base of the triode Ti1, and the cathode of the diode Di3 is connected with the emitter of the triode Ti 1.
Optionally, the high side driving unit 110 includes a resistor Ri1, and the resistor Ri1 is connected in series between the control terminal and the emitter of the transistor Ti 1.
Optionally, the resistance value of the resistor Ri1 is
Wherein Ls is a parasitic inductance of the high-side MOS transistor Qi1, and the parasitic inductance includes a source parasitic inductance of the high-side MOS transistor Qi1 and a parasitic inductance of a gate pin; ciss is the gate-source input capacitance of the high-side MOS tube Qi 1.
Optionally, the high-side driving unit 110 includes a capacitor Ci2, a first terminal of the capacitor Ci2 is connected to the gate of the high-side MOS transistor Qi1, and a second terminal of the capacitor Ci2 is grounded.
Optionally, the capacitance value of the capacitor Ci2 is
Wherein Iq is the maximum current of the gate of the high-side MOS tube Qi 1; dmax is the maximum duty ratio of the output signal of the control end Vi1, f is the working frequency of the output signal of the control end Vi1, Q is the static charge of the gate capacitance of the high-side MOS tube Qi1, and Δ V is the gate-source turn-on voltage of the high-side MOS tube Qi 1.
Optionally, when the circuit comprises a plurality of phase driving modules, the plurality of phase driving modules are connected in parallel.
A second aspect of the present disclosure provides an electric machine including the motor drive circuit according to the first aspect or any one of the optional implementations of the first aspect.
A third aspect of the present disclosure provides a method for controlling a motor drive circuit, the method being used for controlling the motor drive circuit according to the first aspect, the method including:
low-side off stage: a first control signal for controlling the control terminal Vi1 is at a low potential, so that the high-side MOS transistor Qi1 keeps an off state; a second control signal for controlling the control terminal Vi2 is switched from a high potential to a low potential, so that the low-side MOS transistor Qi2 is switched from an on state to an off state, and a first drain current flowing through the ith load winding charges a first terminal of the capacitor Ci 1;
a low-side opening stage: a first control signal for controlling the control terminal Vi1 is at a low potential, so that the high-side MOS transistor Qi1 keeps an off state; a second control signal for controlling the control terminal Vi2 is switched from a low potential to a high potential, so that the low-side MOS transistor Qi2 is switched from an off state to an on state, the capacitor Ci1, the inductor Li1 and the diode Di2 form an oscillator circuit, and a second drain current generated by discharging the capacitor Ci1 flows through the oscillator circuit and the diode Di1 and is drained to the power bus Vbus.
Optionally, the high-side driving unit 110 in the motor driving circuit further includes a high-side gate current bleeding unit 111, where the high-side gate current bleeding unit 111 includes a diode Di3 and a transistor Ti 1;
the base electrode of the triode Ti1 is used for being connected with the control end Vi1, the emitter electrode of the triode Ti1 is used for being connected with the grid electrode of the high-side MOS tube Qi1, and the collector electrode of the triode Ti1 is used for being connected with the source electrode of the high-side MOS tube Qi 1;
the anode of the diode Di3 is connected with the base of the triode Ti1, and the cathode of the diode Di3 is connected with the emitter of the triode Ti 1;
the method further comprises the following steps:
high-side opening stage: a second control signal for controlling the control terminal Vi2 is at a low potential, so that the low-side MOS transistor Qi2 keeps an off state; a first control signal for controlling the control terminal Vi1 is switched from a low potential to a high potential, the diode Di3 is turned on, and the first control signal flows through the diode Di3 to charge the gate capacitance of the high-side MOS transistor Qi1, so that the high-side MOS transistor Qi1 is switched from an off state to an on state;
high-side off stage: a second control signal for controlling the control terminal Vi2 is at a low potential, so that the low-side MOS transistor Qi2 keeps an off state; the first control signal for controlling the control terminal Vi1 is switched from a high potential to a low potential, the emitter and the collector of the transistor Ti1 are turned on, and the gate current generated by the discharge of the gate capacitor of the high-side MOS transistor Qi1 is discharged to the ith load winding through the emitter and the collector of the transistor Ti 1.
Through the technical scheme, the peak voltage suppression unit 130 is connected to the drain of the i-th phase low-side MOS tube Qi2 of the motor driving circuit. Thus, when the low side MOS transistor Qi2 is turned off, part of the current flowing through the i-th inductive winding load will charge the capacitor Ci1 connected to the drain of the low side MOS transistor Qi 2; when the low-side MOS transistor Qi2 is turned on next time, the capacitor Ci1, the inductor Li1 and the diode Di2 in the spike voltage suppression unit 130 form an oscillator circuit, and a current generated by discharging the capacitor Ci1 flows through the oscillator circuit and then through the diode Di1 to the power bus Vbus. Therefore, the drain spike voltage generated when the low side MOS transistor Qi2 is turned off is suppressed, and the switching loss of the low side MOS transistor is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 is a circuit diagram of a motor driving circuit according to an exemplary embodiment of the present disclosure.
Fig. 2 is a circuit diagram of another motor drive circuit shown in an exemplary embodiment of the present disclosure.
Fig. 3 is an equivalent circuit diagram illustrating an exemplary embodiment of the present disclosure.
Fig. 4 is a circuit diagram of a motor according to an exemplary embodiment of the present disclosure.
Description of the reference numerals
High-side driving unit 110 of ith phase driving module 100 of motor driving circuit 10
Low-side drive unit 120 spike voltage suppression unit 130 motor 400
Low side gate current bleeder unit 121 and high side gate current bleeder unit 111
Detailed Description
The following detailed description of specific embodiments of the present disclosure is provided in connection with the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present disclosure, are given by way of illustration and explanation only, not limitation.
Fig. 1 is a diagram illustrating a motor driving circuit according to an exemplary embodiment of the present disclosure. The motor driving circuit 10 may include N phase driving modules, where N is a positive integer greater than 0 and less than or equal to M, and M is the number of phases of the motor. Taking a dc brushless three-phase motor including the motor driving circuit as an example, the number of phases is 3, and the motor driving circuit may include 3 phase driving modules or 2 phase driving modules, which is not limited in this disclosure.
As shown in fig. 1, the i-th phase driving module 100 includes a high-side driving unit 110, a low-side driving unit 120, and a spike voltage suppressing unit 130. Wherein i is a positive integer greater than 0 and less than or equal to N.
The high side driving unit 110 includes a high side MOS transistor Qi 1. The grid of the high-side MOS tube Qi1 is used for connecting a control end Vi1, the drain of the high-side MOS tube Qi1 is used for connecting a power bus Vbus, and the source of the high-side MOS tube Qi1 is used for connecting the ith load winding of the motor.
The control terminal Vi1 may be a part of a PWM controller. The PWM controller may adjust a duty ratio of an output signal of each control terminal according to a load change of the motor, so as to control the high-side MOS transistor Qi1 to turn on or off by controlling a gate voltage of the high-side MOS transistor Qi 1. In particular, other controllers having functions similar to those described above may be used.
Referring to the connection manner of the high-side driving unit 110, when the output signal of the control terminal Vi1 is at a high level, the gate voltage of the high-side MOS transistor Qi1 reaches the turn-on voltage of the high-side MOS transistor Qi1, the drain-source of the high-side MOS transistor Qi1 is turned on, and a current flows from the power bus Vbus to the i-th load winding through the drain-source of the high-side MOS transistor Qi 1.
The low side driving unit 120 further includes a low side MOS transistor Qi 2. The grid of the low-side MOS tube Qi2 is used for connecting a control terminal Vi2, the drain of the low-side MOS tube Qi2 is used for connecting the ith load winding of the motor, and the source of the low-side MOS tube Qi2 is used for grounding.
The control manner for turning on or off the low-side MOS transistor Qi2 can be referred to the above description of the high-side MOS transistor Qi 1.
The spike voltage suppression unit 130 includes a capacitor Ci1, an inductor Li1, a diode Di1, and a diode Di 2. A first end of the capacitor Ci1 is connected to the drain of the low-side MOS transistor Qi2, and a second end of the capacitor Ci1 is connected to the anode of the diode Di 1; the first end of the inductor Li1 is connected with the source electrode of the low-side MOS tube Qi2, and the second end of the inductor Li1 is connected with the anode of the diode Di 2; the cathode of the diode Di2 is connected with the anode of the diode Di 1; the cathode of the diode Di1 is connected to the power bus Vbus.
Taking a brushless dc motor including three-phase star-connected load windings as an example, when the motor normally works, the MOS transistor Q11 in the high-side driving unit 110 of the 1 st phase driving module and the MOS transistor Q22 in the low-side driving unit of the 2 nd phase driving module are controlled to be turned on simultaneously, and the current in the power bus Vbus flows through the drain-source electrode of the MOS transistor Q11 to flow to the 1 st phase load winding, and then flows through the 2 nd phase load winding to flow through the drain-source electrode of the MOS transistor Q22 to flow to the ground. In the next stage, the MOS transistor Q22 is controlled to be turned off, and the MOS transistor Q32 in the low-side driving unit of the 3 rd phase driving module is controlled to be turned on, so that the current flows to the 3 rd phase load winding after flowing through the 1 st phase load winding, and then flows to the ground after flowing through the drain-source electrode of the MOS transistor Q32. Therefore, the current on the power bus Vbus can be controlled to sequentially flow into every two load windings, and the rotor structure of the motor is controlled to rotate according to a certain rotating speed and a certain rotating direction.
It should be noted that, in the related art, the i-th phase load winding has an inductive property of preventing a current from changing, and at the moment of turning off the MOS transistor of the i-th phase low-side driving unit, the i-th phase load winding continues to charge the output capacitor of the low-side MOS transistor and the parasitic capacitor in the circuit, so that the drain and source voltages of the low-side MOS transistor rapidly increase, and a peak voltage whose voltage value exceeds the bus voltage is formed at the drain of the low-side MOS transistor. The spike voltage can cause the low side MOS transistor to break down, resulting in circuit failure. When the low-side MOS transistor is turned off, the switching loss thereof can be approximated by ^ I (t) V (t) dt. The drain voltage raised instantly when the low-side MOS tube is turned off increases the value of V (t) term, and the switching loss of the low-side MOS tube is increased. When the motor normally works, the switching frequency of each MOS tube in the motor driving circuit is usually within the range of 10-500 KHz. The electric energy loss caused by the peak voltage can be partially converted into heat when the low-side MOS tube is turned off every time, and higher requirements are put forward on the heat dissipation of the motor driving circuit.
In the technical solution provided by the embodiment of the present disclosure, in the low-side driving unit 120 of the i-th phase of the motor driving circuit, the drain of the low-side MOS transistor Qi2 is connected to the spike voltage suppression unit 130, so that when the low-side MOS transistor Qi2 is turned off, part of the current flowing through the i-th phase inductive winding load is charged to the first end of the capacitor Ci1 connected to the drain of the low-side MOS transistor Qi 2. The second terminal of the capacitor Ci1 is clamped to the bus voltage by the diode Di 1.
When the low-side MOS transistor Qi2 is turned on next time, the capacitor Ci1, the inductor Li1 and the diode Di2 in the spike voltage suppression unit 130 form an oscillation circuit with an oscillation frequency of
Where L1 is the inductance value of the inductor Li1 and C1 is the capacitance value of the capacitor Ci 1. It should be noted that the oscillation period of the oscillator circuit should be less than the minimum turn-on time of the low-side MOS transistor Qi2, and those skilled in the art can select the types of the above components according to specific application requirements.
In the first half of the oscillation period, the current generated by discharging the capacitor Ci1 passes through the oscillation circuit, and the electric energy stored in the capacitor Ci1 is transferred to the inductor Li1 for storage; in the second half of the oscillation period, the voltage at the second end of the inductor Li1 rises, the diode Di1 and the diode Di2 are turned on, and the electric energy stored in the inductor Li1 is discharged to the power bus Vbus in the form of current.
In this way, the electrical energy that originally causes the peak voltage to be generated at the drain when the low side MOS transistor Qi2 is turned off is stored in the capacitor Ci1, and is discharged to the power bus Vbus through the oscillation circuit in the peak voltage suppression unit 130 when the low side MOS transistor Qi2 is turned on next time. Therefore, the drain spike voltage generated when the low side MOS transistor Qi2 is turned off can be suppressed, and the switching loss of the low side MOS transistor Qi2 can be reduced.
In order to make the technical solutions more clearly understood by those skilled in the art, based on the same idea, embodiments of the present disclosure further provide a method for controlling a motor driving circuit, where the method is used to control the motor driving circuit shown in fig. 1, and the method includes:
low-side off stage: a first control signal for controlling the control terminal Vi1 is at a low potential, so that the high-side MOS transistor Qi1 keeps an off state; a second control signal for controlling the control terminal Vi2 is switched from a high potential to a low potential, so that the low-side MOS transistor Qi2 is switched from an on state to an off state, and a first drain current flowing through the ith load winding charges a first terminal of the capacitor Ci 1.
A low-side opening stage: a first control signal for controlling the control terminal Vi1 is at a low potential, so that the high-side MOS transistor Qi1 keeps an off state; a second control signal for controlling the control terminal Vi2 is switched from a low potential to a high potential, so that the low-side MOS transistor Qi2 is switched from an off state to an on state, the capacitor Ci1, the inductor Li1 and the diode Di2 form an oscillator circuit, and a second drain current generated by discharging the capacitor Ci1 flows through the oscillator circuit and the diode Di1 and is drained to the power bus Vbus.
When the control terminal is the output terminal of the PWM controller, the on and off durations and the output voltage of the high-side MOS transistor Qi1 or the low-side MOS transistor Qi2 may be adjusted by adjusting the duty ratio of the output signal of the PWM control terminal Vi1 or the control terminal Vi2, respectively. The above dividing manner for the low-side off stage and the low-side on stage is only to clearly illustrate the current change of the circuit at the moment when the low-side MOS transistor Qi2 is turned on or turned off. The low-side off phase and the low-side on phase are not consecutive periods of time during actual operation of the motor. The invention is not limited by the order of the various stages described.
On the basis of the motor driving circuit shown in fig. 1, as shown in fig. 2, the high-side driving unit 110 further includes a high-side gate current bleeding unit 111, and the high-side gate current bleeding unit 111 includes a diode Di3 and a transistor Ti 1. The base electrode of the triode Ti1 is used for being connected with the control end Vi1, the emitter electrode of the triode Ti1 is connected with the grid electrode of the high-side MOS tube Qi1, and the collector electrode of the triode Ti1 is connected with the source electrode of the high-side MOS tube Qi 1; the anode of the diode Di3 is connected with the base of the triode Ti1, and the cathode of the diode Di3 is connected with the emitter of the triode Ti 1.
The operation of the high-side gate current bleeder unit 111 will be described in detail below with another control method for a motor drive circuit according to an embodiment of the present disclosure. The method comprises the following steps:
high-side opening stage: a second control signal for controlling the control terminal Vi2 is at a low potential, so that the low-side MOS transistor Qi2 keeps an off state; a first control signal for controlling the control terminal Vi1 is switched from a low potential to a high potential, the diode Di3 is turned on, and the first control signal flows through the diode Di3 to charge the gate capacitance of the high-side MOS transistor Qi1, so that the high-side MOS transistor Qi1 is switched from an off state to an on state;
high-side off stage: a second control signal for controlling the control terminal Vi2 is at a low potential, so that the low-side MOS transistor Qi2 keeps an off state; the first control signal for controlling the control terminal Vi1 is switched from a high potential to a low potential, the emitter and the collector of the transistor Ti1 are turned on, and the gate current generated by the discharge of the gate capacitor of the high-side MOS transistor Qi1 is discharged to the ith load winding through the emitter and the collector of the transistor Ti 1.
It should be noted that the transistor Ti1 is a PNP-type transistor, and the emitter and collector of the transistor Ti1 are turned on under the condition that the base-emitter voltage is greater than a predetermined voltage threshold, for example, 0.7V. When the control terminal Vi1 is switched from a high potential to a low potential, the voltage change of the gate capacitor of the high-side MOS transistor Qi1 lags behind, at this time, the base-emitter voltage of the triode Ti1 is greater than a preset voltage threshold, and the electric energy stored in the gate capacitor is discharged to the ith load winding through the triode Ti1 in the form of current. By adding the high-side gate current bleeder unit 111 to the gate of the high-side MOS transistor Qi1, a current bleeder path is increased when the high-side MOS transistor Qi1 is turned off, and the turn-off speed of the high-side MOS transistor Qi1 is increased.
Meanwhile, a part of the gate current passes through the emitter and the base of the transistor Ti1 and then passes through the diode Di 3. The diode Di3 plays a role of freewheeling, and the part of gate current is limited in a loop consisting of the emitter and the base of the triode and the diode Di3, so that the current flowing through the input capacitor of the high-side MOS transistor Qi1 is reduced, and the turn-off speed of the high-side MOS transistor Qi1 is increased. In addition, diode Di3 can play a freewheeling role to protect the base junction of the transistor from reverse breakdown.
Optionally, the high side driving unit 110 includes a resistor Ri1, and the resistor Ri1 is connected in series between the control terminal and the emitter of the transistor Ti 1.
Since the parasitic inductor Ls exists at the package connection point of the high-side MOS transistor Qi1 and on the circuit board line, when the control signal of the control terminal Vi1 is switched from low level to high level, the parasitic inductor Ls and the gate-source input capacitor Ciss of the high-side MOS transistor Qi1 form an LC series resonance effect, specifically refer to the equivalent circuit shown in fig. 3. The LC series resonance effect causes the gate-forming voltage of the high-side MOS transistor Qi1 to oscillate. By adjusting the resistance of the resistor Ri1, the LC series resonance effect can be suppressed, thereby accelerating the turn-on speed of the high-side MOS transistor Qi 1.
In an alternative embodiment, the resistance Ri1 has a value of
Wherein Ls is as definedParasitic inductance of a high side MOS tube Qi1, wherein the parasitic inductance comprises source parasitic inductance of the high side MOS tube Qi1 and parasitic inductance of a grid pin; ciss is the gate-source input capacitance of the high-side MOS tube Qi 1.
Optionally, the high-side driving unit 110 includes a capacitor Ci2, a first terminal of the capacitor Ci2 is connected to the gate of the high-side MOS transistor Qi1, and a second terminal of the capacitor Ci2 is grounded.
When the high-side MOS transistor Qi1 is turned on, the capacitor Ci2 may provide a charge to the gate capacitor of the high-side MOS transistor Qi1, so as to accelerate the turn-on speed of the high-side MOS transistor Qi 1. If the control terminal Vi1 is the output terminal of the PWM controller, in an alternative embodiment, the capacitance value of the capacitor Ci2 is
Wherein Iq is the maximum current of the gate of the high-side MOS transistor Qi1, and the value of Iq may be approximately the quotient of the voltage value of the control terminal Vi1 when the first control signal is at the high potential divided by the resistance value of the resistor Ri 1. Dmax is the maximum duty cycle of the first control signal. f is the working frequency of the output signal of the control terminal Vi 1. Q is the static charge of the gate capacitance of the high side MOS transistor Qi1, i.e., the total charge of the gate capacitance when the first control signal is at a low potential. And Δ V is the gate-source turn-on voltage of the high-side MOS transistor Qi 1.
In specific implementation, engineers in the art can set the resistance value of the resistor Ri1 and the capacitance value of the capacitor Ci2 according to various parameters of actually used components and use requirements.
Optionally, when the circuit comprises a plurality of phase driving modules, the plurality of phase driving modules are connected in parallel.
In order to make the technical solution of the present invention more clear to those skilled in the art, the embodiment of the present disclosure further provides a structural schematic diagram of a three-phase dc brushless motor, as shown in fig. 4, the motor 400 includes the motor driving circuit 10, the PWM controller 20, the power supply 30, and the load winding module 40. Wherein, each phase load winding in the load winding module 40 is connected in a star connection manner. The PWM controller comprises control ends Vi 1-Vi 6.
Taking the specific structure of the i-th phase driving module 100 as an example, as shown in fig. 4, similar to the high side driving unit 110 in the i-th phase driving module 100, the low side driving unit 120 includes a low side gate current bleeder unit 121 connected to the gate of the low side MOS transistor Qi2, a resistor Ri2, and a capacitor Ci 3. The low-side gate current bleeder unit 121 further comprises a transistor Ti2 and a diode Di 4. The connection relationship of the components in the low-side driving unit 120 is similar to the connection relationship of the components in the high-side driving unit 110, and the functions of the components can refer to the above description of the high-side driving unit 110, and are not described herein again.
The motor driving circuit 10 includes 3 phase driving modules, and the 3 phase driving modules are connected in parallel. Each phase driving module is connected to a corresponding phase load winding in the load winding module 40, and the high-side driving unit and the low-side driving unit of each phase driving module are respectively connected to corresponding control ports of the PWM controller 20. The specific connection structure of each phase driving unit can refer to the above description of the i-th phase driving module 100, and is not described herein again.
The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
It should be noted that the various technical features described in the above embodiments may be combined in any suitable manner without contradiction, for example, only the low-side driving unit includes the low-side gate current bleeding unit, and the high-side driving unit does not include the high-side gate current bleeding unit. The disclosure does not separately describe the various possible combinations.
In addition, any combination of various embodiments of the present disclosure may be made, and the same should be considered as the disclosure of the present disclosure, as long as it does not depart from the spirit of the present disclosure.
Claims (10)
1. A motor driving circuit is characterized by comprising N phase driving modules, wherein N is a positive integer which is greater than 0 and less than or equal to M, and M is the phase number of a motor;
the ith phase driving module 100 includes a high side driving unit 110, a low side driving unit 120, and a spike voltage suppressing unit 130, where i is a positive integer greater than 0 and less than or equal to N;
the high side driving unit 110 comprises a high side MOS transistor Qi 1;
the grid electrode of the high-side MOS tube Qi1 is used for connecting a control end Vi1, the drain electrode of the high-side MOS tube Qi1 is used for connecting a power bus Vbus, and the source electrode of the high-side MOS tube Qi1 is used for connecting the ith load winding of the motor;
the low side driving unit 120 comprises a low side MOS transistor Qi 2;
the grid electrode of the low-side MOS tube Qi2 is used for connecting a control end Vi2, the drain electrode of the low-side MOS tube Qi2 is used for connecting the ith load winding of the motor, and the source electrode of the low-side MOS tube Qi2 is used for grounding;
the spike voltage suppression unit 130 comprises a capacitor Ci1, an inductor Li1, a diode Di1, and a diode Di 2;
a first end of the capacitor Ci1 is connected to the drain of the low-side MOS transistor Qi2, and a second end of the capacitor Ci1 is connected to the anode of the diode Di 1; the first end of the inductor Li1 is connected with the source electrode of the low-side MOS tube Qi2, and the second end of the inductor Li1 is connected with the anode of the diode Di 2; the cathode of the diode Di2 is connected with the anode of the diode Di 1; the cathode of the diode Di1 is used to connect the power bus Vbus.
2. The circuit of claim 1, wherein the high side driving unit 110 further comprises a high side gate current bleeder unit 111, the high side gate current bleeder unit 111 comprising a diode Di3, a transistor Ti 1;
the base electrode of the triode Ti1 is used for being connected with the control end Vi1, the emitter electrode of the triode Ti1 is connected with the grid electrode of the high-side MOS tube Qi1, and the collector electrode of the triode Ti1 is connected with the source electrode of the high-side MOS tube Qi 1;
the anode of the diode Di3 is connected with the base of the triode Ti1, and the cathode of the diode Di3 is connected with the emitter of the triode Ti 1.
3. The circuit of claim 2, wherein the high side driving unit 110 comprises a resistor Ri1, and the resistor Ri1 is connected in series between the control terminal Vi1 and the emitter of the transistor Ti 1.
4. The circuit of claim 3, wherein the resistance of the resistor Ri1 is that Ls is a parasitic inductance of the high side MOS transistor Qi1, and the parasitic inductance includes a source parasitic inductance of the high side MOS transistor Qi1 and a parasitic inductance of a gate pin; ciss is the gate-source input capacitance of the high-side MOS tube Qi 1.
5. The circuit of claim 2, wherein the high side driving unit 110 comprises a capacitor Ci2, a first terminal of the capacitor Ci2 is connected to the gate of the high side MOS transistor Qi1, and a second terminal of the capacitor Ci2 is connected to ground.
6. The circuit of claim 5, wherein the capacitance of the capacitor Ci2 is that Iq is the maximum current of the gate of the high-side MOS transistor Qi 1; dmax is the maximum duty ratio of the output signal of the control end Vi1, f is the working frequency of the output signal of the control end Vi1, Q is the static charge of the gate capacitance of the high-side MOS tube Qi1, and Δ V is the gate-source turn-on voltage of the high-side MOS tube Qi 1.
7. A circuit according to any one of claims 1 to 6, wherein when the circuit comprises a plurality of phase driver modules, the plurality of phase driver modules are connected in parallel.
8. An electric motor comprising a motor drive circuit according to any one of claims 1 to 7.
9. A method for controlling a motor drive circuit according to claim 1, the method comprising:
low-side off stage: a first control signal for controlling the control terminal Vi1 is at a low potential, so that the high-side MOS transistor Qi1 keeps an off state; a second control signal for controlling the control terminal Vi2 is switched from a high potential to a low potential, so that the low-side MOS transistor Qi2 is switched from an on state to an off state, and a first drain current flowing through the ith load winding charges a first terminal of the capacitor Ci 1;
a low-side opening stage: a first control signal for controlling the control terminal Vi1 is at a low potential, so that the high-side MOS transistor Qi1 keeps an off state; a second control signal for controlling the control terminal Vi2 is switched from a low potential to a high potential, so that the low-side MOS transistor Qi2 is switched from an off state to an on state, the capacitor Ci1, the inductor Li1 and the diode Di2 form an oscillator circuit, and a second drain current generated by discharging the capacitor Ci1 flows through the oscillator circuit and the diode Di1 and is drained to the power bus Vbus.
10. The method of claim 9, wherein the high side drive unit 110 further comprises a high side gate current drain unit 111 in the motor drive circuit, wherein the high side gate current drain unit 111 comprises a diode Di3, a transistor Ti 1;
the base electrode of the triode Ti1 is used for being connected with the control end Vi1, the emitter electrode of the triode Ti1 is used for being connected with the grid electrode of the high-side MOS tube Qi1, and the collector electrode of the triode Ti1 is used for being connected with the source electrode of the high-side MOS tube Qi 1;
the anode of the diode Di3 is connected with the base of the triode Ti1, and the cathode of the diode Di3 is connected with the emitter of the triode Ti 1;
the method further comprises the following steps:
high-side opening stage: a second control signal for controlling the control terminal Vi2 is at a low potential, so that the low-side MOS transistor Qi2 keeps an off state; a first control signal for controlling the control terminal Vi1 is switched from a low potential to a high potential, the diode Di3 is turned on, and the first control signal flows through the diode Di3 to charge the gate capacitance of the high-side MOS transistor Qi1, so that the high-side MOS transistor Qi1 is switched from an off state to an on state;
high-side off stage: a second control signal for controlling the control terminal Vi2 is at a low potential, so that the low-side MOS transistor Qi2 keeps an off state; the first control signal for controlling the control terminal Vi1 is switched from a high potential to a low potential, the emitter and the collector of the transistor Ti1 are turned on, and the gate current generated by the discharge of the gate capacitor of the high-side MOS transistor Qi1 is discharged to the ith load winding through the emitter and the collector of the transistor Ti 1.
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| CN201710765422.1A CN109698648B (en) | 2017-08-30 | 2017-08-30 | Motor drive circuit and motor |
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| CN201710765422.1A CN109698648B (en) | 2017-08-30 | 2017-08-30 | Motor drive circuit and motor |
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| CN109698648B true CN109698648B (en) | 2021-03-26 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101461127A (en) * | 2006-06-03 | 2009-06-17 | 依必安-派特圣乔根有限责任两合公司 | Method for operating and electronically commutated motor, and motor for carrying out a method such as this |
| CN103296875A (en) * | 2013-06-04 | 2013-09-11 | 深圳市英威腾电气股份有限公司 | Driving spike voltage suppression circuit |
| CN204118741U (en) * | 2014-09-26 | 2015-01-21 | 百固电气有限公司 | A kind of Active Power Filter-APF |
| CN106452404A (en) * | 2016-07-25 | 2017-02-22 | 天津理工大学 | Active gate control circuit and IGBT electromagnetic interference inhibition method thereof |
| JP6117710B2 (en) * | 2014-01-24 | 2017-04-19 | 株式会社日本自動車部品総合研究所 | Power converter |
-
2017
- 2017-08-30 CN CN201710765422.1A patent/CN109698648B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101461127A (en) * | 2006-06-03 | 2009-06-17 | 依必安-派特圣乔根有限责任两合公司 | Method for operating and electronically commutated motor, and motor for carrying out a method such as this |
| CN103296875A (en) * | 2013-06-04 | 2013-09-11 | 深圳市英威腾电气股份有限公司 | Driving spike voltage suppression circuit |
| JP6117710B2 (en) * | 2014-01-24 | 2017-04-19 | 株式会社日本自動車部品総合研究所 | Power converter |
| CN204118741U (en) * | 2014-09-26 | 2015-01-21 | 百固电气有限公司 | A kind of Active Power Filter-APF |
| CN106452404A (en) * | 2016-07-25 | 2017-02-22 | 天津理工大学 | Active gate control circuit and IGBT electromagnetic interference inhibition method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 开关磁阻电机功率变换器IGBT关断电压尖峰的分析与抑制;丁小刚 等;《机电元件》;20120229;第32卷(第1期);第36-40页 * |
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