CN109694255A - 一种微膨胀硅砖及其制备方法 - Google Patents
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 222
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 111
- 239000011449 brick Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 55
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 19
- 239000010432 diamond Substances 0.000 claims abstract description 19
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- 239000003595 mist Substances 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 18
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 18
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011230 binding agent Substances 0.000 claims abstract description 10
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- 238000005121 nitriding Methods 0.000 claims description 8
- 239000000047 product Substances 0.000 claims description 8
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- 235000019738 Limestone Nutrition 0.000 claims description 5
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 5
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 5
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- 210000001161 mammalian embryo Anatomy 0.000 claims description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000003763 carbonization Methods 0.000 claims 1
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
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Abstract
本发明公开了一种微膨胀硅砖及其制备方法,所述微膨胀硅砖包括以下重量百分比的原料:熔融石英石65%‑75%、二氧化硅微粉5%‑12%、超细二氧化硅微粉5%‑10%、纳米二氧化硅微粉2%‑5%、碳化硅微粉2%‑6%、氮化硅微粉1%‑5%、粘结剂1%‑4%和硅溶胶1%‑5%,所述熔融石英石的纯度≥99.99%,所述二氧化硅微粉的粒径为450‑500μm,所述超细二氧化硅微粉的粒径为10‑20μm,所述纳米二氧化硅微粉的粒径为50‑80nm,所述碳化硅微粉的粒径为100‑300μm,所述氮化硅微粉的粒径为200‑400μm。
Description
技术领域:
本发明属于本发明涉及耐火材料技术领域,特别涉及一种微膨胀硅砖及其制备方法。
背景技术:
硅砖是现代大型焦炉砌筑最主要的耐火材料,先进焦炉的设计方向是高效、长寿、节能和环保,硅砖的各项性能直接影响了焦炉技术的先进性。现有的硅砖烧结前往往水分、气孔含量较高,导致硅砖成品孔隙率高、耐压强度低,不能适应长期高温环境下使用。
公开于该背景技术部分的信息仅仅旨在增加对本发明的总体背景的理解,而不应当被视为承认或以任何形式暗示该信息构成已为本领域一般技术人员所公知的现有技术。
发明内容:
本发明的目的在于提供了一种微膨胀硅砖及其制备方法,从而克服上述现有技术中的缺陷。
为实现上述目的,本发明采用的技术方案如下:一种微膨胀硅砖,包括以下重量百分比的原料:熔融石英石65%-75%、二氧化硅微粉5%-12%、超细二氧化硅微粉5%-10%、纳米二氧化硅微粉2%-5%、碳化硅微粉2%-6%、氮化硅微粉1%-5%、粘结剂1%-4%和硅溶胶1%-5%,所述熔融石英石的纯度≥99.99%,所述二氧化硅微粉的粒径为450-500μm,所述超细二氧化硅微粉的粒径为10-20μm,所述纳米二氧化硅微粉的粒径为50-80nm,所述碳化硅微粉的粒径为100-300μm,所述氮化硅微粉的粒径为200-400μm。
所述粘结剂为羧甲基纤维素和石灰石的混合物。
所述硅溶胶中SiO2的含量为25%-35%。
一种微膨胀硅砖的制备方法,包括以下步骤:
1)将原料中熔融石英石、二氧化硅微粉、超细二氧化硅微粉、纳米二氧化硅微粉、碳化硅微粉和氮化硅微粉分别放入研磨机中研磨均匀,再将研磨好的原料放入强力搅拌机中搅拌均匀;
2)将粘结剂加入到搅拌机中继续搅拌均匀,并将搅拌好的胚料倒入到模具中成型;
3)将成型的砖坯放置到硅溶胶中浸泡5-10小时后转移到恒温恒湿的环境中放置12-24小时,所述环境温度为20-25℃,所述环境湿度为15%~20%,并保持恒温恒湿的环境压力为0.5个大气压,去除砖坯中多余的水分和气泡;
4)将砖坯转移到隧道炉中进行分段式烧制,首先将炉温升至500-600℃并烧制3-5小时,再将炉温缓慢升至800-1000℃继续烧制10-15小时,最后将炉温升至1390-1480℃继续烧制35-40小时后缓慢冷却至室温,得到硅砖半成品;
5)将硅砖半成品放置到氮化炉内,将氮化炉升温至1350-1450℃继续烧制15-20小时后缓慢冷却至室温,得到微膨胀硅砖成品。
采用本发明的技术方案的有益效果是:
本发明的微膨胀硅砖以熔融石英石为主要原料,并加入不同规格的二氧化硅微粉,能够使得硅砖的结构更致密,同时在原料中加入碳化硅微粉和氮化硅微粉,能够提高硅砖的强度;本发明的微膨胀硅砖在烧制前经过恒温恒湿环境处理,脱去砖坯中的水分和气泡,可以保证硅砖结构的致密性,烧制时采用阶段式烧制方式,可以使得硅砖晶体结构转变更均匀,进一步的使得硅砖成品结构更致密;氮化硅处理可以提高硅砖的强度以及增强硅砖结构的致密程度,本发明制备的硅砖可以广泛应用于砌筑焦炉、玻璃熔炉、酸性炼钢炉以及其他热加工设备。
具体实施方式:
下面结合具体实施例对本发明做进一步说明。
实施例1
一种微膨胀硅砖,包括以下重量百分比的原料:熔融石英石65%、二氧化硅微粉5%、超细二氧化硅微粉5%、纳米二氧化硅微粉5%、碳化硅微粉6%、氮化硅微粉5%、粘结剂4%和硅溶胶5%,所述熔融石英石的纯度≥99.99%,所述二氧化硅微粉的粒径为450-500μm,所述超细二氧化硅微粉的粒径为10-20μm,所述纳米二氧化硅微粉的粒径为50-80nm,所述碳化硅微粉的粒径为100-300μm,所述氮化硅微粉的粒径为200-400μm;所述粘结剂为羧甲基纤维素和石灰石的混合物;所述硅溶胶中SiO2的含量为25%-35%。
一种微膨胀硅砖的制备方法,包括以下步骤:
1)将原料中熔融石英石、二氧化硅微粉、超细二氧化硅微粉、纳米二氧化硅微粉、碳化硅微粉和氮化硅微粉分别放入研磨机中研磨均匀,再将研磨好的原料放入强力搅拌机中搅拌均匀;2)将粘结剂加入到搅拌机中继续搅拌均匀,并将搅拌好的胚料倒入到模具中成型;3)将成型的砖坯放置到硅溶胶中浸泡5小时后转移到恒温恒湿的环境中放置12小时,所述环境温度为20℃,所述环境湿度为15%,并保持恒温恒湿的环境压力为0.5个大气压,去除砖坯中多余的水分和气泡;4)将砖坯转移到隧道炉中进行分段式烧制,首先将炉温升至500℃并烧制5小时,再将炉温缓慢升至800℃继续烧制10小时,最后将炉温升至1400℃继续烧制40小时后缓慢冷却至室温,得到硅砖半成品;5)将硅砖半成品放置到氮化炉内,将氮化炉升温至1350℃继续烧制20小时后缓慢冷却至室温,得到微膨胀硅砖成品。
实施例2
一种微膨胀硅砖,包括以下重量百分比的原料:熔融石英石70%、二氧化硅微粉10%、超细二氧化硅微粉10%、纳米二氧化硅微粉2%、碳化硅微粉2%、氮化硅微粉1%、粘结剂2%和硅溶胶3%,所述熔融石英石的纯度≥99.99%,所述二氧化硅微粉的粒径为450-500μm,所述超细二氧化硅微粉的粒径为10-20μm,所述纳米二氧化硅微粉的粒径为50-80nm,所述碳化硅微粉的粒径为100-300μm,所述氮化硅微粉的粒径为200-400μm;所述粘结剂为羧甲基纤维素和石灰石的混合物;所述硅溶胶中SiO2的含量为25%-35%。
一种微膨胀硅砖的制备方法,包括以下步骤:
1)将原料中熔融石英石、二氧化硅微粉、超细二氧化硅微粉、纳米二氧化硅微粉、碳化硅微粉和氮化硅微粉分别放入研磨机中研磨均匀,再将研磨好的原料放入强力搅拌机中搅拌均匀;2)将粘结剂加入到搅拌机中继续搅拌均匀,并将搅拌好的胚料倒入到模具中成型;3)将成型的砖坯放置到硅溶胶中浸泡10小时后转移到恒温恒湿的环境中放置24小时,所述环境温度为25℃,所述环境湿度为20%,并保持恒温恒湿的环境压力为0.5个大气压,去除砖坯中多余的水分和气泡;4)将砖坯转移到隧道炉中进行分段式烧制,首先将炉温升至600℃并烧制3小时,再将炉温缓慢升至1000℃继续烧制10小时,最后将炉温升至1390℃继续烧制35小时后缓慢冷却至室温,得到硅砖半成品;5)将硅砖半成品放置到氮化炉内,将氮化炉升温至1450℃继续烧制20小时后缓慢冷却至室温,得到微膨胀硅砖成品。
实施例3
一种微膨胀硅砖,包括以下重量百分比的原料:熔融石英石70%、二氧化硅微粉8%、超细二氧化硅微粉7%、纳米二氧化硅微粉3%、碳化硅微粉2%、氮化硅微粉3%、粘结剂2%和硅溶胶5%,所述熔融石英石的纯度≥99.99%,所述二氧化硅微粉的粒径为450-500μm,所述超细二氧化硅微粉的粒径为10-20μm,所述纳米二氧化硅微粉的粒径为50-80nm,所述碳化硅微粉的粒径为100-300μm,所述氮化硅微粉的粒径为200-400μm;所述粘结剂为羧甲基纤维素和石灰石的混合物;所述硅溶胶中SiO2的含量为25%-35%。
一种微膨胀硅砖的制备方法,包括以下步骤:
1)将原料中熔融石英石、二氧化硅微粉、超细二氧化硅微粉、纳米二氧化硅微粉、碳化硅微粉和氮化硅微粉分别放入研磨机中研磨均匀,再将研磨好的原料放入强力搅拌机中搅拌均匀;2)将粘结剂加入到搅拌机中继续搅拌均匀,并将搅拌好的胚料倒入到模具中成型;3)将成型的砖坯放置到硅溶胶中浸泡8小时后转移到恒温恒湿的环境中放置18小时,所述环境温度为23℃,所述环境湿度为18%,并保持恒温恒湿的环境压力为0.5个大气压,去除砖坯中多余的水分和气泡;4)将砖坯转移到隧道炉中进行分段式烧制,首先将炉温升至600℃并烧制4小时,再将炉温缓慢升至900℃继续烧制12小时,最后将炉温升至1450℃继续烧制38小时后缓慢冷却至室温,得到硅砖半成品;5)将硅砖半成品放置到氮化炉内,将氮化炉升温至1400℃继续烧制18小时后缓慢冷却至室温,得到微膨胀硅砖成品。
对实施例1、实施例2和实施例3的微膨胀硅砖进行性能测试,测试结果如下表:
实验结果表明本发明的微膨胀硅砖以熔融石英石为主要原料,并加入不同规格的二氧化硅微粉,能够使得硅砖的结构更致密,同时在原料中加入碳化硅微粉和氮化硅微粉,能够提高硅砖的强度;本发明的微膨胀硅砖在烧制前经过恒温恒湿环境处理,脱去砖坯中的水分和气泡,可以保证硅砖结构的致密性,烧制时采用阶段式烧制方式,可以使得硅砖晶体结构转变更均匀,进一步的使得硅砖成品结构更致密;氮化硅处理可以提高硅砖的强度以及增强硅砖结构的致密程度,本发明制备的硅砖可以广泛应用于砌筑焦炉、玻璃熔炉、酸性炼钢炉以及其他热加工设备。
尽管上述实施例已对本发明的技术方案进行了详细地描述,但是本发明的技术方案并不限于以上实施例,在不脱离本发明的思想和宗旨的情况下,对本发明的技术方案所做的任何改动将落入本发明的权利要求书所限定的范围。
Claims (4)
1.一种微膨胀硅砖,其特征在于:包括以下重量百分比的原料:熔融石英石65%-75%、二氧化硅微粉5%-12%、超细二氧化硅微粉5%-10%、纳米二氧化硅微粉2%-5%、碳化硅微粉2%-6%、氮化硅微粉1%-5%、粘结剂1%-4%和硅溶胶1%-5%,所述熔融石英石的纯度≥99.99%,所述二氧化硅微粉的粒径为450-500μm,所述超细二氧化硅微粉的粒径为10-20μm,所述纳米二氧化硅微粉的粒径为50-80nm,所述碳化硅微粉的粒径为100-300μm,所述氮化硅微粉的粒径为200-400μm。
2.根据权利要求1所述的一种微膨胀硅砖,其特征在于:所述粘结剂为羧甲基纤维素和石灰石的混合物。
3.根据权利要求1所述的一种微膨胀硅砖,其特征在于:所述硅溶胶中SiO2的含量为25%-35%。
4.一种微膨胀硅砖的制备方法,其特征在于:包括以下步骤:
1)将原料中熔融石英石、二氧化硅微粉、超细二氧化硅微粉、纳米二氧化硅微粉、碳化硅微粉和氮化硅微粉分别放入研磨机中研磨均匀,再将研磨好的原料放入强力搅拌机中搅拌均匀;
2)将粘结剂加入到搅拌机中继续搅拌均匀,并将搅拌好的胚料倒入到模具中成型;
3)将成型的砖坯放置到硅溶胶中浸泡5-10小时后转移到恒温恒湿的环境中放置12-24小时,所述环境温度为20-25℃,所述环境湿度为15%~20%,并保持恒温恒湿的环境压力为0.5个大气压,去除砖坯中多余的水分和气泡;
4)将砖坯转移到隧道炉中进行分段式烧制,首先将炉温升至500-600℃并烧制3-5小时,再将炉温缓慢升至800-1000℃继续烧制10-15小时,最后将炉温升至1390-1480℃继续烧制35-40小时后缓慢冷却至室温,得到硅砖半成品;
5)将硅砖半成品放置到氮化炉内,将氮化炉升温至1350-1450℃继续烧制15-20小时后缓慢冷却至室温,得到微膨胀硅砖成品。
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