CN109687825A - A kind of high linearity microwave mixer - Google Patents
A kind of high linearity microwave mixer Download PDFInfo
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- CN109687825A CN109687825A CN201811565756.5A CN201811565756A CN109687825A CN 109687825 A CN109687825 A CN 109687825A CN 201811565756 A CN201811565756 A CN 201811565756A CN 109687825 A CN109687825 A CN 109687825A
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- 239000003990 capacitor Substances 0.000 claims description 18
- 238000006880 cross-coupling reaction Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 4
- 230000003321 amplification Effects 0.000 claims 1
- 230000007850 degeneration Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 206010047700 Vomiting Diseases 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention proposes a kind of high linearity microwave mixer, in order to improve traditional gilbert's structure, improve on the basis of traditional gilbert, reduce overall power, improve the conversion gain and bandwidth of frequency mixer.Balun converter structure is introduced, frequency mixer can be enable to input single-ended signal, improves the integrated level of design.
Description
Technical field
The present invention relates to wireless communication technology field, the frequency changer circuit being related in wireless transmitter, especially with regard to one kind
High linearity microwave mixer.
Background technique
Being constantly progressive and develop with wireless communication technique, the diversification of application background and high-endization of performance, application
Field also gradually constantly expands therewith, and the design objective of wireless communication system is also increasingly stringent.Down-conversion mixer is as radio-frequency front-end
One important module of receiving end, function are that the radiofrequency signal that will be received is down-converted to intermediate-freuqncy signal.Because down coversion is mixed
The performance of frequency device can generate more significant impact to entire radio-frequency transmitter system, so turning to the linearity of down-conversion mixer
Gain is changed, isolation, power consumption suffer from more harsh requirement.
Traditional gilbert mixer structure such as Fig. 1, although having preferable gain and interport isolation, its work
It is extremely limited as bandwidth, expects that the higher linearity has certain difficulty.Although in the application of low-frequency range, gilbert's knot
Structure can obtain good performance, if but frequency rises to higher band, then can generate biggish decaying and noise, need
Higher level driving.In addition, being limited to design feature, gilbert mixer is applied to the input of single-ended signal if necessary
Output, then need for be grounded one end, the performance of frequency mixer will can be greatly reduced in this.
Summary of the invention
The present invention proposes a kind of high linearity microwave mixer, in order to traditional gilbert's structure is improved,
It is improved on the basis of traditional gilbert, reduces overall power, improve the conversion gain and bandwidth of frequency mixer.It introduces
Balun converter structure, can enable frequency mixer to input single-ended signal, improve the integrated level of design.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is a kind of existing technology.
Fig. 2 is implementing circuit figure of the invention.
Fig. 3 is equivalent circuit diagram of the invention.
To make the object, technical solutions and advantages of the present invention clearer, the technical solution below in the present invention carries out clear
Chu is fully described by, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 2 is a kind of circuit diagram of preferred embodiment of the high linearity wide with upper frequency mixer of the present invention.Such as Fig. 2 institute
Show, a kind of high linearity wide band upper frequency mixer of the present invention, including transconductance stage unit 1, switching stage unit 2 and load stage unit 3.Difference
Divide the positive and negative both ends Vin+ and Vin- of intermediate-freuqncy signal to inject transconductance stage unit 1, is then exported by 1 amplified signal of transconductance stage unit
To switching stage unit 2, the output of switching stage unit 2 is connected to load stage unit 3, and switching stage unit 2 and the intrinsic input of difference are believed
Number+with-is connected, and difference radio-frequency signal Vrf- and Vrf+ is exported between switching stage unit 2 and load stage unit 3.
Bypass mutual conductance is made of difference NM0S pipe M3-M4, resistance R3-R4, inductance L3-L4 and capacitor C3-C4.Difference NM0S
Pipe M3 and M4 source electrode meet inductance L3 and L4 (L3=L4) respectively, and NM0S pipe M3 grid passes through resistance R3 respectively and connects bias voltage
Va, by the negative input end Vin- of capacitor C3 connection intermediate-freuqncy signal, in order to guarantee the signal of M3 grid and apply the signal phase of grid
Same-phase, C3=CuNMOS pipe M4 grid pass through resistance R4 respectively and meet bias voltage Va, pass through capacitor C4 connection intermediate-freuqncy signal
Positive input terminal Vin+, in order to guarantee the signal of M4 grid and run the signal same phase of grid, C4=C2, because of C1=C2,
So C1=C2=C3=C4.NM0S pipe M3 drain electrode is connected to the drain electrode that NM0S pipe is vomited, and NM0S pipe M4 drain electrode is connected to NM0S
The drain electrode of pipe M2.By changing the size and bias voltage Va of bypass difference NM0S pipe M3 and M4, bypass NM0S can be made to manage
Three rank mutual conductances and main road gangster's 0S Guan Sanjie mutual conductance there is opposite amplitude, and single order mutual conductance symbol is identical, therefore can leak
Pole is offseted with three rank mutual conductances of main road, while enhancing single order mutual conductance, to reduce the third order distortion of transconductance stage unit, improves line
Property degree, and improve gain.It is more flat that bypass source inductance L3 and L4 can be such that NM0S Guan Sanjie mutual conductance changes with bias voltage,
To increase mixer linearity degree with the robustness of bias voltage.
As shown in Fig. 2, switching stage unit 2 includes four NM0S pipe Ms-Ms and two resistance R5-R6 (3NM0S pipe Ms and Ms
Grid is mutually coupled with the negative input port-of intrinsic signals, meets bias voltage Vg by resistance R5, connects bias voltage by resistance R6
Vg, NM0S pipe apply and apply source electrode be mutually coupled with input transconductance stage NM0S pipe M7 and Ms source electrode be mutually coupled with input transconductance stage NM0S
The drain electrode of pipe M2 and M4, the drain electrode interconnection of NM0S pipe Ms and M7, the drain electrode interconnection of NM0S pipe Ms and Ms.Pass through optimization four
The size and biasing of NM0S pipe Ms-Ms, makes switching stage cell operation in optimized switch state, and reduction is non-since switching tube introduces
Linearly.
Load stage unit 3 includes two inductance L5 and L6, and inductance L5-termination power voltage VDD, the other end and gangster 05 manage
The drain electrode of this sum connects and the radio frequency positive output end Vrf+ as upper frequency mixer device, inductance L6-termination power voltage VDD, it is another
End is connect with NM0S pipe M6 and Ms and the radio frequency negative output terminal Vrf- as upper frequency mixer.Load inductance L5 and L6 are rationally designed,
Output bandwidth can effectively be increased.
As shown in figure 3, the present invention and no bypass mutual conductance, the power gain without bypass mutual conductance and main road without cross coupling capacitor
It is compared with bandwidth, the upper frequency mixer that the present invention designs as the result is shown gain highest, upper frequency mixer of the present invention in entire frequency band
Three dB bandwidth is 68-94GHZ, no bypass mutual conductance upper frequency mixer and without bypass mutual conductance and main road without cross coupling capacitor uppermixing
Device three dB bandwidth is 70-94GHz, and bandwidth of the present invention is most wide as the result is shown.
The present invention is compared with no bypass mutual conductance, without bypass mutual conductance and main road without the output ldB compression point of cross coupling capacitor,
Its upper frequency mixer that the present invention designs as the result is shown linearity in entire frequency band is best.
Structure of the invention can also be realized in addition to that can be realized with field-effect tube with bipolar junction transistor.With ambipolar crystalline substance
When body pipe is realized, it is only necessary to NM0S pipe are substituted for NPN type triode, PM0S pipe is substituted for PNP type triode.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations;Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (7)
1. a kind of high linearity microwave mixer characterized by comprising transconductance stage unit, switching stage unit and load stage list
Member；
The transconductance stage unit is to improve the linearity;The switching stage unit biasing is in optimal switch state;The load
Grade is singly capable of increasing bandwidth and can improve gain;Differential intermediate frequency pass through transconductance stage unit amplification, switching stage unit with
Intrinsic signals are mixed, and last difference radio-frequency signal exports between load stage unit and switching stage unit.
2. a kind of high linearity microwave mixer as described in claim 1, which is characterized in that the transconductance stage unit includes main road
Mutual conductance and bypass mutual conductance；The main road mutual conductance is by difference NMOS tube M1, NMOS tube M2, resistance R1, resistance R2, inductance U, inductance L2
Capacitive cross, which is constituted, with capacitor C1, capacitor C2 couples gate junction structure altogether；The main road mutual conductance NMOS tube M1 source electrode connects inductance respectively
The positive input terminal of L1 and intermediate-freuqncy signal, NMOS tube M2 source electrode connect the negative input end of inductance L2 and intermediate-freuqncy signal respectively,
NMOS tube M1 grid passes through R1 resistance respectively and meets bias voltage Vm, the source electrode run by capacitor C2 connection NMOS tube, NMOS tube M2
Grid passes through R2 resistance respectively and meets bias voltage Vm, by the source electrode of capacitor C2 connection NMOS tube M1, forms capacitive cross coupling
Common gate configuration.
3. a kind of high linearity microwave mixer as claimed in claim 2, which is characterized in that the inductance L1=inductance L2, electricity
Hold C2=capacitor C1.
4. a kind of high linearity microwave mixer as claimed in claim 3, which is characterized in that the bypass mutual conductance is by difference
NMOS tube M3, NMOS tube M4, resistance R3, resistance R4, inductance L3, inductance L4 and capacitor C3, capacitor C4 constitute load source degeneration electricity
The common source configuration of sense；The NMOS tube M3 and NMOS tube M4 source electrode connect inductance L3 and inductance L4, NMOS tube M3 grid point respectively
Biased electrical SVa is not connect by resistance R3, by the negative input end of capacitor C3 connection intermediate-freuqncy signal, NMOS tube M4 grid leads to respectively
It crosses resistance R4 and meets Pian and set electricity Ya Qe 3, by the positive input terminal of capacitor C4 connection intermediate-freuqncy signal, NMOS tube M3 drain electrode is connected to NMOS
The drain electrode that pipe is applied, NMOS tube M4, which drains, is connected to the drain electrode of NMOS tube M2.
5. a kind of high linearity microwave mixer as claimed in claim 4, which is characterized in that the inductance L3=inductance L4;Electricity
Hold C1=capacitor C2=capacitor C3=capacitor C4.
6. a kind of high linearity microwave mixer as described in claim 1, which is characterized in that the switching stage unit includes four
NMOS tube M5-NMOS pipe M8 and two resistance Rs, resistance R6;NMOS tube M5 and NMOS tube M8 grid are mutually coupled with the negative of intrinsic signals
Input terminal meets bias voltage Vg by resistance R5, and NMOS tube M6 and NMOS tube M7 grid are mutually coupled with the positive input terminal of local oscillation signal,
Bias voltage Vg is met by resistance R6, NMOS tube M5 and NMOS tube M6 source electrode are mutually coupled with the NMOS tube M1 and NMOS of input transconductance stage
The drain electrode of pipe M3, NMOS tube M7 and NMOS tube M8 source electrode, which are mutually connected, inputs the leakage of the NMOS tube M2 and NMOS tube M4 of transconductance stage
Pole, the drain electrode interconnection of NMOS tube M5 and NMOS tube M7, the drain electrode interconnection of NMOS tube M6 and NMOS tube M8.
7. a kind of high linearity microwave mixer as described in claim 1, which is characterized in that the load stage unit includes two
The drain electrode connection and conduct of inductance L5 and L6, inductance L5-termination power voltage VDD, the other end and NMOS tube MdPNMOS pipe M7
The radio frequency positive output end of frequency mixer, inductance L6-termination power voltage VDD, the other end are connect simultaneously with NMOS tube M6 and NMOS tube M8
Radio frequency negative output terminal as frequency mixer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811565756.5A CN109687825A (en) | 2018-12-20 | 2018-12-20 | A kind of high linearity microwave mixer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811565756.5A CN109687825A (en) | 2018-12-20 | 2018-12-20 | A kind of high linearity microwave mixer |
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| CN109687825A true CN109687825A (en) | 2019-04-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114268329A (en) * | 2021-12-14 | 2022-04-01 | 天津大学 | Dual-frequency high-linearity demodulator |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130271213A1 (en) * | 2012-04-13 | 2013-10-17 | Mediatek Inc. | Signal processing circuit with circuit induced noise cancellation |
| CN103684268A (en) * | 2012-09-18 | 2014-03-26 | 北京中电华大电子设计有限责任公司 | Low power consumption and high linearity gain controllable active orthogonal frequency mixer |
| CN106385236A (en) * | 2016-10-17 | 2017-02-08 | 广西师范大学 | Active frequency mixer with high linearity and high gain and method |
| CN106921346A (en) * | 2017-03-01 | 2017-07-04 | 成都通量科技有限公司 | High linearity wide band upper frequency mixer |
-
2018
- 2018-12-20 CN CN201811565756.5A patent/CN109687825A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130271213A1 (en) * | 2012-04-13 | 2013-10-17 | Mediatek Inc. | Signal processing circuit with circuit induced noise cancellation |
| CN103684268A (en) * | 2012-09-18 | 2014-03-26 | 北京中电华大电子设计有限责任公司 | Low power consumption and high linearity gain controllable active orthogonal frequency mixer |
| CN106385236A (en) * | 2016-10-17 | 2017-02-08 | 广西师范大学 | Active frequency mixer with high linearity and high gain and method |
| CN106921346A (en) * | 2017-03-01 | 2017-07-04 | 成都通量科技有限公司 | High linearity wide band upper frequency mixer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114268329A (en) * | 2021-12-14 | 2022-04-01 | 天津大学 | Dual-frequency high-linearity demodulator |
| CN114268329B (en) * | 2021-12-14 | 2023-09-19 | 天津大学 | Dual-frequency high-linearity demodulator |
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Application publication date: 20190426 |
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