CN109686644A - Ion Implantation Equipment and its working method - Google Patents
Ion Implantation Equipment and its working method Download PDFInfo
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- CN109686644A CN109686644A CN201811493470.0A CN201811493470A CN109686644A CN 109686644 A CN109686644 A CN 109686644A CN 201811493470 A CN201811493470 A CN 201811493470A CN 109686644 A CN109686644 A CN 109686644A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Abstract
A kind of Ion Implantation Equipment and its working method, Ion Implantation Equipment includes: ion source, for emitting ion beam；Pedestal, for installing wafer；First baffle structure and second baffle structure between ion source and pedestal, the first baffle structure and second baffle structure are mutually discrete, and the first baffle structure includes several first baffles, and the second baffle structure includes several second baffles；Switch makes a first baffle and a second baffle be in working face, hatch frame is constituted between first baffle and second baffle in working face, the hatch frame passes through ion beam.Using the Ion Implantation Equipment while improving the ion implantation consistency of different batches wafer, additionally it is possible to reduce delay machine frequency.
Description
Technical field
The present invention relates to semiconductor field more particularly to a kind of Ion Implantation Equipment and its working methods.
Background technique
Ion implantation has a wide range of applications in semiconductor processing technology, it is that a kind of introduce into semiconductor material can
The impurity of quantity is controlled, the method to change its electric property, most important purposes is doped semiconductor materials.Ion implantation technology
It is to be carried out in Ion Implantation Equipment, whole wafer (Wafer) is scanned by the ion beam (Ion Beam) of ion source incidence, is made
The semiconductor material of crystal column surface is uniformly adulterated.
However, the delay machine frequency of existing Ion Implantation Equipment is higher.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of Ion Implantation Equipment and its working methods, to reduce Ion Implantation Equipment
Delay machine frequency.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of Ion Implantation Equipment, comprising: ion source, for sending out
Penetrate ion beam；Pedestal, for installing wafer；First baffle structure and second baffle structure between ion source and pedestal,
The first baffle structure and second baffle structure are mutually discrete, and the first baffle structure includes several first baffles, institute
Stating second baffle structure includes several second baffles；Switch makes a first baffle and a second baffle be in work
Face, constitutes hatch frame between first baffle and second baffle in working face, the hatch frame passes through ion beam.
Optionally, have greater than 0 ° and be less than between the direction of beam transport at the working face and the hatch frame
180 ° of angle.
Optionally, each first baffle all has the first median plane；Each first baffle includes being parallel to each other
Two the first side walls, described two the first side walls are located at first median plane two sides, and described two the first side walls are flat
For row in first median plane, the distance of described two the first side walls to first median plane is identical；The first baffle is also
Including second sidewall, the both ends of the second sidewall are connect with the edge of two the first side walls respectively；Each second baffle
All have the second median plane；Each second baffle includes two third side walls being parallel to each other, described two third side walls
The second median plane two sides are located at, and described two third side walls are parallel to second median plane, described two third sides
Wall is equidistant to second median plane；The second baffle further includes the 4th side wall, the both ends point of the 4th side wall
It is not connect with the edge of two third side walls；When the first baffle and second baffle are in working face, first center
Face is coplanar with the second median plane, and the second sidewall is constituted towards the 4th side wall, the second sidewall and the 4th side wall
The side wall of the hatch frame.
Optionally, the first baffle structure further includes the first fixed part, and one end of each first baffle is fixed on first
On fixed part, and first fixed part is oppositely arranged with second sidewall；The second baffle structure further includes the second fixed part,
One end of each second baffle is fixed on the second fixed part, and second fixed part is oppositely arranged with the 4th side wall.
Optionally, first fixed part has first axis, and several first baffles are solid around the first axis
Due to first fixed part, has between the direction of beam transport at the first axis and the hatch frame and be greater than 0 °
Angle less than 180 °；Second fixed part has second axially, and several second baffles are axial solid around described second
It is greater than 0 ° due to having between second fixed part, the described second axial direction of beam transport at the hatch frame
And the angle less than 180 °.
Optionally, the number of the first baffle is greater than or equal to 2；The number of the second baffle is greater than or equal to 2
It is a.
Optionally, further includes: the first arrangement for deflecting between the ion source and first baffle structure, for sieving
Ion beam；The second arrangement for deflecting between the first baffle structure and pedestal, for making ion beam normal sheaf pedestal.
Optionally, the switch includes motor.
Correspondingly, the present invention also provides a kind of working methods of Ion Implantation Equipment, comprising: provide above-mentioned Ion Implantation Equipment；
Wafer is provided；Wafer is placed on pedestal；So that a first baffle and a second baffle is in working face using switch, locates
The hatch frame is constituted between the first baffle and second baffle of working face；When being constituted between first baffle and second baffle
After the hatch frame, ion source is made to emit ion beam, the ion beam injects wafer after hatch frame, carries out to wafer
Ion implantation.
Optionally, each first baffle is in the working time of working face are as follows: 1.5 months~2 months；It is each described
Second baffle is in the working time of working face are as follows: 1.5 months~2 months.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In the Ion Implantation Equipment that technical solution of the present invention provides, there is the be separated from each other between the ion source and pedestal
One baffle arrangement and second baffle structure, the first baffle structure include several first baffles, the second baffle structure
Including several second baffles.The switch is in for making a first baffle and a second baffle be in working face
Hatch frame is constituted between the first baffle and second baffle of working face, the hatch frame is used for through ion beam to wafer
It is ion implanted.The hatch frame constituted when a first baffle and a second baffle are in working face no longer meets technique
It is required that only another need to be made not to be used for structure using switch without shutting down replacement first baffle structure and second baffle structure
Working face is at the first baffle of hatch frame or another second baffle that not be used to constitute hatch frame to constitute
New hatch frame, the new hatch frame is for handling the wafer of next batch.Due to new hatch frame with
The dimensional uniformity of hatch frame before is preferable, when so that the wafer to different batches being handled, passes through from hatch frame
Ion beam otherness it is smaller, therefore, be conducive to improve different batches wafer ion implantation consistency.To sum up, institute is utilized
When stating Ion Implantation Equipment wafer being ion implanted, while improving the ion implantation consistency of different batches wafer, also
It can reduce delay machine frequency.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of Ion Implantation Equipment；
Fig. 2 is the structural schematic diagram of one embodiment of Ion Implantation Equipment of the present invention；
Fig. 3 is the enlarged drawing in region 22 in Fig. 2；
Fig. 4 is the structural schematic diagram of another embodiment of Ion Implantation Equipment of the present invention；
Fig. 5 is the flow chart of Ion Implantation Equipment working method of the present invention.
Specific embodiment
As described in background, the delay machine frequency of Ion Implantation Equipment is higher.
Fig. 1 is a kind of structural schematic diagram of Ion Implantation Equipment.
Referring to FIG. 1, Ion Implantation Equipment includes: ion source 100, for emitting ion beam 1；Pedestal 105, for installing crystalline substance
Circle；Mutual discrete first baffle 101 and second baffle 102 between ion source 100 and pedestal 105, the first gear
Opening 103 is constituted between plate 101 and second baffle 102, the opening 103 is for passing through ion beam 1.
In above-mentioned Ion Implantation Equipment, there is the first arrangement for deflecting 104, institute between the first baffle 101 and ion source 100
The first arrangement for deflecting 104 is stated for sieving ion beam 1.The ion beam 1 is after the screening of the first arrangement for deflecting 104, ion beam 1
Width be greater than the size of opening 103 so that part ion beam 1 is stopped by first baffle 101 and second baffle 102, remaining part
The ion beam 1 divided passes through the opening 103.Side wall of the ion beam 1 during by opening 103 easily to opening 103
It causes to damage, so that the size of opening 103 changes, then the consistency for arriving the ion beam 1 of motor seat 105 is poor, so that right
The ion implantation consistency of different batches wafer is poor.
A method of improving the consistency of different batches wafer ion implantation: replacement first baffle 101 or second baffle
102 to constitute new opening 103.However, replacement first baffle 101 or second baffle 102, so that delay machine frequency is excessively high.
To sum up, when wafer being ion implanted using existing Ion Implantation Equipment, it is difficult to be planted improving different batches wafer
While the consistency entered, delay machine frequency is reduced.
For solve the technical problem, the present invention provides a kind of Ion Implantation Equipments, comprising: ion source, for emit from
Beamlet；Pedestal, for installing wafer；First baffle structure and second baffle structure between the ion source and pedestal,
The first baffle structure and second baffle structure are mutually discrete, and the first baffle structure includes several first baffles, institute
Stating second baffle structure includes several second baffles；Switch makes a first baffle and a second baffle switch to work
Make face, there is hatch frame between first baffle and second baffle in working face, the hatch frame passes through ion beam.
Using the Ion Implantation Equipment while improving the consistency of different batches wafer ion implantation, additionally it is possible to reduce delay machine frequency
Rate.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 2 is the structural schematic diagram of Ion Implantation Equipment of the present invention.
Referring to FIG. 2, Ion Implantation Equipment includes: ion source 200, for emitting ion beam X；Pedestal 205, for installing crystalline substance
Circle；First baffle structure (not marked in figure) between ion source 200 and pedestal 205 and second baffle structure is (in figure not
Mark), the first baffle structure and second baffle structure are mutually discrete, and the first baffle structure includes several first gear
Plate 201, the second baffle structure include several second baffles 202；Switch (not shown) makes a first baffle
201 and a second baffle 202 switch to working face, constituted between the first baffle 201 in working face and second baffle 202
Hatch frame 203, the hatch frame 203 pass through ion beam X.
It is described in detail below with reference to attached drawing.
The ion source 200 can be any kind of electrification for generating the ion beam X, the ion beam X of required characteristic
The particle beams.In the present embodiment, the ion beam X is positively charged ion beam.In other embodiments, the ion beam is band
The ion beam of negative electricity.
The ion beam X that the ion source 200 is launched is along perpendicular to having width in the direction of the launch.The ion source 200
The influence factor of the width of the ion beam X of transmitting includes: the scanning voltage of ion source 200, specifically, the scanning voltage is got over
Greatly, the sweep length of ion beam X is bigger.
In the ion beam X width direction, the ion beam X includes middle area (not marking in figure) and is located at intermediate
The marginal zone (not marked in figure) of area two sides.
The deflection angle of the ion beam X of the middle area is 0 degree, and along the direction of middle area to marginal zone, the ion
The deflection angle of beam X is gradually increased.The deflection angle refers to the direction of motion of ion beam X and the folder of ion source central axis
Angle.That is: the depth of parallelism of ion beam X described in middle area is preferable, and the depth of parallelism of ion beam X described in marginal zone is poor.
The Ion Implantation Equipment further include: the first arrangement for deflecting 204 between first baffle 201 and ion source 200,
First arrangement for deflecting 204 selects the ion of suitable size for sieving ion beam X so that in ion beam X ion size
Consistency is higher, is conducive to the ion implantation consistency for improving same wafer.
The Ion Implantation Equipment further include: the second arrangement for deflecting 206 between pedestal 205 and first baffle 201, institute
The second arrangement for deflecting 206 is stated for making ion beam X inject wafer in parallel, is conducive to improve with wafer fringe region and centre
The ion implantation consistency in region.
The switch makes a first baffle 201 and a second baffle 202 switch to working face, the working face
First baffle 201 is used for through ion beam 1 with the hatch frame 203 that second baffle 202 is constituted wafer to be ion implanted.
In the present embodiment, the switch is motor.
Fig. 3 is the enlarged drawing in region 22 in Fig. 2.
In the present embodiment, each first baffle 201 all has the first median plane L1；Each first baffle 201
Including two the first side walls 11 being parallel to each other, described two the first side walls 11 are located at the two sides the first median plane L1,
And described two the first side walls 11 are parallel to the first median plane L1, described two the first side walls 11 arrive first median plane
The distance of L1 is identical；The first baffle 201 further includes second sidewall 12, the both ends of the second sidewall 12 respectively with two
The edge of one side wall 11 connects.
In the present embodiment, each second baffle 202 all has the second median plane L2；Each second baffle
202 include two third side walls 13 being parallel to each other, and described two third side walls 13 are located at the second two sides median plane L2, and
Described two third side walls 13 are parallel to the second median plane L2, and described two third side walls 13 arrive second median plane 12
Be equidistant；The second baffle 202 further includes the 4th side wall 14, the both ends of the 4th side wall 14 respectively with two thirds
The edge of side wall 13 connects.
When the first baffle 201 is in working face with second baffle 202, the first median plane L1 and the second center
Face L2 is coplanar.
The ion beam X is by having transmission direction Y, and the working face and the transmission when hatch frame 203
Have between the Y of direction and is greater than 0 ° and the angle less than 180 °.In the present embodiment, the working face is perpendicular to the transmission direction
Y。
Moreover, when the first baffle 201 is in working face with second baffle 202, the second sidewall 12 is towards institute
The 4th side wall 14 is stated, the second sidewall 12 and the 4th side wall 14 constitute the side wall of the hatch frame 203.
The first baffle structure further includes the first fixed part (not marking in figure), and one end of each first baffle 201 is solid
Due on the first fixed part；The second baffle structure further includes the second fixed part (not marking in figure), each second baffle 202
One end be fixed on the second fixed part.
First fixed part has first axis, and several first baffles 201 are fixed on around the first axis
First fixed part, and first fixed part is oppositely arranged with second sidewall 12, the first axis and the opening are tied
Have between ion beam X transmission direction Y at structure 203 and is greater than 0 ° of angle less than 180 °；Second fixed part has second
Axial, several second baffles 202 are axially fixed at second fixed part, and second fixed part around described second
It is oppositely arranged with the 4th side wall 14, has between the described second axial ion beam X transmission direction Y at the hatch frame 203
Have and is greater than 0 ° and the angle less than 180 °.
Due to being greater than the size of hatch frame 203 by the width of the ion beam X after the screening of the first arrangement for deflecting 204, so that
Part ion beam X is stopped by first baffle 201 and second baffle 202, and the ion beam X of rest part passes through hatch frame 203.Institute
It states ion beam X easily the side wall of hatch frame 203 to be caused to damage during through hatch frame 203, so that hatch frame
203 size changes when no longer meeting technique and requiring, without delay machine replacement first baffle structure and second baffle structure, and
It is to make the first baffle that not be used to constitute hatch frame 203 201 using switch or one not be used to constitute opening
The second baffle 202 of structure 203 is in working face to constitute new hatch frame 203, the new hatch frame 203 for pair
The wafer of next batch is handled.Due to new hatch frame 203 and hatch frame 203 before dimensional uniformity compared with
Good, when so that the wafer to different batches being handled, the otherness of the ion beam X passed through from hatch frame 203 is smaller, because
This, is conducive to the consistency for improving the ion implantation of different batches wafer.To sum up, using the Ion Implantation Equipment to wafer carry out from
When son implantation, while improving the ion implantation consistency of different batches wafer, additionally it is possible to reduce delay machine frequency.
In the present embodiment, the number of the first baffle 201 is 4, and the number of the second baffle 202 is 4.Only
Have after whole first baffles 201 be used to constitute hatch frame 203, just replaces first baffle structure and be therefore conducive to
It is lower to reduce delay machine frequency；Likewise, only after whole second baffles 202 be used to constitute hatch frame 203, just more
Second baffle structure is changed, therefore, advantageously reduces delay machine frequency.
Fig. 4 is the structural schematic diagram of another embodiment of Ion Implantation Equipment of the present invention.
The present embodiment only difference is that with Fig. 2 embodiment: for the first baffle 300 that the first baffle structure includes
Number is 6, and the number for the second baffle 301 that the second baffle structure includes is 6.
In the present embodiment, the number of the first baffle 300 is more, only when whole first baffles 300 by with
After constituting hatch frame 203, first baffle structure is just replaced, the frequency of delay machine is advantageously reduced.The second baffle 301
Number it is more, only after whole second baffles 301 be used to constitute hatch frame 203, just replacement second baffle
Structure advantageously reduces the frequency of delay machine.
Also, when the hatch frame 203 that a first baffle 300 and a second baffle 301 are in working face composition is sent out
When changing no longer meets technique requirement, without delay machine replacement first baffle structure and second baffle structure, but switching is utilized
Device makes the first baffle that not be used to constitute hatch frame 203 300 or a second gear that not be used to constitute opening 203
Plate 301 is in working face to constitute new hatch frame 203, the size of new hatch frame 203 and hatch frame 203 before
Consistency it is preferable, when so that the wafer to different batches being handled, the difference of the ion beam X passed through from hatch frame 203
Property it is smaller, therefore, be conducive to improve different batches wafer ion implantation consistency.To sum up, the Ion Implantation Equipment pair is utilized
When wafer is ion implanted, while improving the ion implantation consistency of different batches wafer, additionally it is possible to reduce delay machine frequency
Rate.
In other embodiments, the number of the first baffle is 2~5, alternatively, the number of first baffle is greater than 6
It is a；The number of the second baffle is 2~5, alternatively, the number of second baffle is greater than 6.
Correspondingly, the present invention also provides a kind of working methods of Ion Implantation Equipment device, referring to FIG. 5, including:
Step S1: above-mentioned Ion Implantation Equipment is provided；
Step S2: wafer is provided；
Step S3: wafer is placed on pedestal；
Step S4: a first baffle and a second baffle is made to be in working face using switch, in working face
The hatch frame is constituted between first baffle and second baffle；
Step S5: after constituting hatch frame between first baffle and second baffle, ion source is made to emit ion beam, institute
It states ion beam and injects wafer through hatch frame, wafer is ion implanted.
It is described in detail below in conjunction with Fig. 2.
Referring to FIG. 2, wafer is placed on pedestal 205；Make a first baffle 201 and a second gear using switch
Hatch frame 203 is constituted between plate 202；When a first baffle 201 and second baffle 202 constitute hatch frame 203 it
Afterwards, ion source 200 is made to emit ion beam X, the ion beam X injects wafer through hatch frame 203, carries out ion plant to wafer
Enter.
The ion beam X easily causes to damage during through hatch frame 203 to the side wall of hatch frame 203, makes
Hatch frame 203 size change no longer meet technique require when, without delay machine replace first baffle structure and second
Baffle arrangement, but using switch make the first baffle that not be used to constitute hatch frame 203 201 or one not by with
Working face is in the second baffle 202 for constituting hatch frame 203 to constitute new hatch frame 203, the new opening knot
Structure 203 is for handling the wafer of next batch.Due to the ruler of new hatch frame 203 and hatch frame 203 before
Very little consistency is preferable, when so that the wafer to different batches being handled, the difference of the ion beam X passed through from hatch frame 203
Property it is smaller, therefore, be conducive to improve different batches wafer ion implantation consistency.To sum up, the Ion Implantation Equipment pair is utilized
When wafer is ion implanted, while improving the ion implantation consistency of different batches wafer, additionally it is possible to reduce delay machine frequency
Rate.
In the present embodiment, the switch makes the first baffle that not be used to constitute hatch frame 203 201 and one
A second baffle 201 that not be used to constitute hatch frame 203 is in working face to constitute new hatch frame 203.
In other embodiments, the switch makes the first baffle that not be used to constitute hatch frame and has constituted
The second baffle of hatch frame constitutes new hatch frame；Alternatively, switch makes one not to be used to constitute the of hatch frame
Two baffles and the first baffle for having constituted hatch frame constitute new hatch frame.
Each first baffle 201 is in the working time of working face are as follows: 1.5 months~2 months；Each second baffle 202
Working time in working face are as follows: 1.5 months~2 months.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of Ion Implantation Equipment characterized by comprising
Ion source, for emitting ion beam；
Pedestal, for installing wafer；
First baffle structure and second baffle structure between the ion source and pedestal, the first baffle structure and
Two baffle arrangements are mutually discrete, and the first baffle structure includes several first baffles, if the second baffle structure includes
Dry second baffle；
Switch makes a first baffle and a second baffle be in working face, the first baffle in working face and second
Hatch frame is constituted between baffle, the hatch frame passes through ion beam.
2. Ion Implantation Equipment as described in claim 1, which is characterized in that the ion at the working face and the hatch frame
Have between beam transmission direction and is greater than 0 ° and the angle less than 180 °.
3. Ion Implantation Equipment as claimed in claim 2, which is characterized in that each first baffle all has the first center
Face；Each first baffle includes two the first side walls being parallel to each other, and described two the first side walls are located at described first
Median plane two sides, and described two the first side walls are parallel to first median plane, described two the first side walls to described first
The distance of median plane is identical；The first baffle further includes second sidewall, the both ends of the second sidewall respectively with two first
The edge of side wall connects；Each second baffle all has the second median plane；Each second baffle includes being parallel to each other
Two third side walls, described two third side walls are located at the second median plane two sides, and described two third side walls are parallel
In second median plane, described two third side wall being equidistant to second median plane；The second baffle also wraps
The 4th side wall is included, the both ends of the 4th side wall are connect with the edge of two third side walls respectively；
When the first baffle and second baffle are in working face, first median plane is coplanar with the second median plane, and institute
Second sidewall is stated towards the 4th side wall, the second sidewall and the 4th side wall constitute the side wall of the hatch frame.
4. Ion Implantation Equipment as claimed in claim 3, which is characterized in that the first baffle structure further includes first fixed
Portion, one end of each first baffle are fixed on the first fixed part, and first fixed part is oppositely arranged with second sidewall；Institute
Stating second baffle structure further includes the second fixed part, and one end of each second baffle is fixed on the second fixed part, and described
Two fixed parts are oppositely arranged with the 4th side wall.
5. Ion Implantation Equipment as claimed in claim 4, which is characterized in that first fixed part has first axis, several
The first baffle is fixed on first fixed part around the first axis, at the first axis and the hatch frame
Direction of beam transport between have be greater than 0 ° of angle less than 180 °；Second fixed part is axial with second, several
The second baffle is axially fixed at second fixed part around described second, and described second axially and at the hatch frame
Direction of beam transport between have be greater than 0 ° and the angle less than 180 °.
6. Ion Implantation Equipment as described in claim 1, which is characterized in that the number of the first baffle is greater than or equal to 2；
The number of the second baffle is greater than or equal to 2.
7. Ion Implantation Equipment as described in claim 1, which is characterized in that further include: it is located at the ion source and first baffle
The first bias unit between structure, for sieving ion beam；Second between the first baffle structure and pedestal is inclined
Rotary device, for making ion beam normal sheaf pedestal.
8. Ion Implantation Equipment as described in claim 1, which is characterized in that the switch includes motor.
9. a kind of working method of the Ion Implantation Equipment as described in claim 1 to any one of claim 8, which is characterized in that packet
It includes:
Above-mentioned Ion Implantation Equipment is provided；
Wafer is provided；
Wafer is placed on pedestal；
A first baffle and a second baffle is set to be in working face using switch, the first baffle in working face and
The hatch frame is constituted between two baffles；
After first baffle and second baffle constitute hatch frame, ion source is set to emit ion beam, the ion beam is through being open
Wafer is injected after structure, and wafer is ion implanted.
10. the working method of Ion Implantation Equipment as claimed in claim 9, which is characterized in that each first baffle is in
The working time of working face are as follows: 1.5 months~2 months；Each second baffle is in the working time of working face are as follows: 1.5
A month~2 months.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811493470.0A CN109686644A (en) | 2018-12-07 | 2018-12-07 | Ion Implantation Equipment and its working method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811493470.0A CN109686644A (en) | 2018-12-07 | 2018-12-07 | Ion Implantation Equipment and its working method |
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| CN109686644A true CN109686644A (en) | 2019-04-26 |
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| CN106531605A (en) * | 2016-12-08 | 2017-03-22 | 苏州能讯高能半导体有限公司 | Ion implantation device and system |
| CN206259317U (en) * | 2016-12-12 | 2017-06-16 | 中芯国际集成电路制造(北京)有限公司 | Ion extractuin device and ion implantation equipment |
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|---|---|---|---|---|
| CN1377509A (en) * | 1999-10-05 | 2002-10-30 | 瓦里安半导体设备联合公司 | High transmission, low energy beamline architecture for ion implanter |
| CN101563750A (en) * | 2006-09-29 | 2009-10-21 | 瓦里安半导体设备公司 | Technique for improved ion beam transport |
| CN106531605A (en) * | 2016-12-08 | 2017-03-22 | 苏州能讯高能半导体有限公司 | Ion implantation device and system |
| CN206259317U (en) * | 2016-12-12 | 2017-06-16 | 中芯国际集成电路制造(北京)有限公司 | Ion extractuin device and ion implantation equipment |
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