CN109659363A - A kind of preparation method of the low ohm contact structures of gallium nitride HEMT structure - Google Patents
A kind of preparation method of the low ohm contact structures of gallium nitride HEMT structure Download PDFInfo
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- CN109659363A CN109659363A CN201811385449.9A CN201811385449A CN109659363A CN 109659363 A CN109659363 A CN 109659363A CN 201811385449 A CN201811385449 A CN 201811385449A CN 109659363 A CN109659363 A CN 109659363A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 80
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 238000005516 engineering process Methods 0.000 claims abstract description 20
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 46
- 239000010936 titanium Substances 0.000 claims description 45
- 229910002704 AlGaN Inorganic materials 0.000 claims description 25
- 239000010931 gold Substances 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 20
- 238000005406 washing Methods 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000005234 chemical deposition Methods 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- -1 titanium metals Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 68
- 230000008859 change Effects 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
A kind of production method of the low ohm contact structures of gallium nitride HEMT structure, belong to microelectronics technology, including substrate, low temperature nitride gallium nucleating layer, nitride buffer layer, gallium nitride channel layer, aluminum gallium nitride barrier layer, drain electrode, source electrode, gate electrode and dielectric layer, the wherein both ends of drain electrode and source electrode separation gate electrode, dielectric layer is additionally provided between gate electrode and aluminum gallium nitride barrier layer, Two-dimensional electron gas channel is formed between gallium nitride channel layer and aluminum gallium nitride barrier layer, manufacturing process of the present invention is simple, it is reproducible, it is suitable for the application of GaN base HEMT device.
Description
Technical field
The invention belongs to microelectronics technologies, are related to the preparation and reliability of semiconductor devices, specifically a kind of
The production method of gallium nitride HEMT low resistance Ohmic contact based on X/Ti/Al/Ti/Au composite construction, wherein X is a kind of IV race
The simple substance or alloy of element, the device of preparation can be used for high-power application.
Background technique
Third generation semiconductor material, that is, broad stopband (Wide Band Gap Semiconductor, abbreviation WBGS) semiconductor
Material is grown up after first generation silicon, germanium and second generation GaAs, indium phosphide etc..In third generation semiconductor material,
Gallium nitride (GaN) have broad-band gap, direct band gap, high breakdown electric field, lower dielectric constant, high electronics saturation drift velocity,
Capability of resistance to radiation by force and the superior property such as good chemical stability, becomes and manufactures the micro- electricity of a new generation after germanium, silicon, GaAs
The key semiconductor material of sub- device and circuit.Especially high temperature, high-power, high frequency and Flouride-resistani acid phesphatase electronic device and all-wave
There is advantageous advantage in terms of long and short wavelength photoelectric device, be to realize high temperature and high-power, high frequency and anti-radiation, all-wave
The ideal material of long photoelectric device, be the new and high technologies such as microelectronics, power electronics, photoelectron and national defense industry, information industry,
The pillar industries such as mechanical and electrical industry and energy industry, which enter after 21 century to rely, continues the key basic material of development.
Summary of the invention
It is an object of the invention to be directed to the difficult point of the high ohmic contact resistance of gallium nitride HEMT power device, from device technology
The optimization angle of preparation process proposes the gallium nitride HEMT low resistance Ohmic contact based on Sn/Ti/Al/Ti/Au composite construction
Production method improves the performance of HEMT device to reduce ohmic contact resistance.
To achieve the above object, each layer of device architecture of the invention is successively arranged from bottom to up, including substrate, low temperature nitride
Gallium nucleating layer, nitride buffer layer, gallium nitride channel layer, aluminum gallium nitride barrier layer, drain electrode, source electrode, gate electrode and dielectric layer,
The wherein both ends of drain electrode and source electrode separation gate electrode, are additionally provided with dielectric layer, in nitrogen between gate electrode and aluminum gallium nitride barrier layer
Change and forms Two-dimensional electron gas channel between gallium channel layer and aluminum gallium nitride barrier layer.
Preferably, the substrate is all material that can be used to epitaxial nitride gallium film, including insulation or semi-insulated
The materials such as sapphire, silicon, silicon carbide, gallium nitride and diamond, size range 2-8inch.
Preferably, low temperature nitride gallium nucleating layer, 400-700 DEG C of growth temperature, film thickness 10-50nm, for being subsequent
Nitride buffer layer growth provide nucleation node, improve gallium nitride film crystalline quality.
Preferably, the nitride buffer layer, to use metal organic source chemical vapor deposition (MOCVD) or other methods
The gallium nitride film layer that unintentional doped growing is formed, film thickness range are 100nm-10um.Its quality directly affects then
The quality of the hetero-junctions of growth, the various lattice defects in the region can also trapped electron, to influence the density of 2DEG.
Preferably, the channel of the high concentration 2DEG formed at the gallium nitride channel layer and AlGaN barrier functions bed boundary.
Preferably, the drain electrode and source electrode are closed using tin/titanium/aluminium/titanium/gold (Sn/Ti/Al/Ti/Au) multilayer
Gold.Tin metal layer forms N-type heavy doping with a thickness of 1-20nm, reduces ohmic contact resistance.
Preferably, the gate electrode is conventional Schottky contacts or metal-dielertric-semiconductor structure.
Preferably, the insulating medium layer is SiNxOr SiO2Thin-film material is straight with gate electrode for completely cutting off AlGaN
Contact reduces grid leak electricity, improves device electric breakdown strength.
Preferably, Ohmic contact refers to contact of the X/Ti/Al/Ti/Au alloy with AlGaN/GaN, the resistance of contact surface
Value is much smaller than the resistance of semiconductor itself, will not generate apparent additional impedance, will not make inside AlGaN/GaN hetero-junctions
Significant change occurs for equilibrium carrier concentration.When device works, most voltage drop is at behaviour area (Active region)
Without the C-V characteristic in contact surface, during will not influence.In high frequency and high power device, Ohmic contact is to design and manufacture
One of critical issue.
The Ohmic contact is prepared on the principle AlGaN/GaN hetero-junctions using tunnel-effect.Metal and
When semiconductor contact, if doping content of semiconductor is very high, potential barrier sector width can be thinning, and ohmic contact resistance becomes smaller, and electronics is very
It is easy to generate tunnel current by tunnel-effect.Its contact resistance size is defined by formula 1:
Wherein, mn *Indicate that electron effective mass, ε indicate dielectric constant, NDIndicate doping concentration.It can be seen from formula 1
Doping concentration is higher, contact resistance RcSmaller, present invention introduces X metal, the first purpose is to improve AlGaN/GaN hetero-junctions table
The electron adulterated concentration of the N-type in face.
The ohmic contact resistance generally uses transmission line model (Transmission Line Model:TLM) to carry out
Measurement.Table top is formed by etachable material surface, is fabricated to a series of a length of W linearly arranged, the rectangular metal electricity that width is d
Pole.A different spacing is all corresponding between every two adjacent electrode, all-in resistance R consists of two parts:
Wherein, Rc is contact resistance size, RSHFor the square resistance of material, L is the spacing of adjacent two electrode.
Preferably, the Schottky contacts refer to contact of the alloys such as Ni/Au with AlGaN/GaN, since the two combines
Contact berrier is higher afterwards, forms Schottky contacts.
Preferably, the X/Ti/Al/Ti/Au alloy is prepared using electron beam evaporation method, successively sputter X,
Five kinds of materials of Ti, Al, Ti, Au form multiple layer metal, finally form alloy by high annealing.
Preferably, the Ti/Al/Ti/Au is as traditional alloying metal, and wherein Al is natural Ohmic contact material
Material, basic work function is low, using affected for main material；First layer Ti can form TiN, while shape with bottom AlGaN/GaN
At a large amount of vacancy N for playing n-type doping, contact resistance is reduced；Protective layer of the Au as top layer, protects alloy not by air oxygen
Change；Second layer Ti prevents Au from permeating downwards as barrier layer.
Preferably, the X is formed with bottom AlGaN/GaN phase separation as the film layer deposited at first and is largely played N-shaped
The vacancy N of doping reduces contact berrier.
Preferably, the high-temperature annealing process, temperature range are 300 DEG C -1000 DEG C, annealing time 5-300s.
Preferably, the ohmic contact resistance is capable of mutual conductance and the saturation current of effective influence HEMT device.Ohm
Contact resistance is lower, and the mutual conductance of device is higher, and saturation current is bigger, and the electrical characteristics of device are better.
Preferably, the X metal layer with a thickness of 3nm, 5nm or 8nm.
In the present invention, it is to utilize under vacuum conditions that the electron beam evaporation method, which is one kind of vacuum vapor plating,
Electron beam carries out directly heating evaporation material, makes to evaporate material gasification and transport to substrate, condensation forms film in substrate
Method.In electron beam heater, the substance being heated is placed in the crucible of water cooling, can avoid evaporation material and sidewall of crucible
Reacting influences the quality of film, and therefore, electron beam vapor deposition method can prepare high purity films, while heavy in same evaporation
Multiple crucibles can be disposed in product device, realization is simultaneously or separately evaporated, and a variety of different substances are deposited.It is steamed by electron beam
Hair, any material can be evaporated, and different materials need to use different types of crucible to obtain evaporation rate to be achieved.
Compared with prior art, the invention has the advantages that and technical effect:
The device is a kind of HEMT devices of GaN base, the Ohmic contact formed using this method,
For contact resistance lower than the state of the art (reducing by 0.2 Ω .cm or so), the conducting resistance of device can decline 10%-20%, mutual conductance
Increase 5%-15%, and manufacturing process is simple, reproducible feature.In combination with the original high threshold electricity of device HEMT
Pressure, high-breakdown-voltage, high current density and excellent pinch-off behavior are suitable for high-power electronic device applications.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Wherein: 101- substrate, 102- nucleating layer, 103- buffer layer, 104- channel layer, 105- aluminum gallium nitride barrier layer, 106-
Drain electrode, 107- source electrode, 108- gate electrode, 109- Two-dimensional electron gas channel, 110- dielectric layer.
Specific embodiment
To be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, below with reference to
Specific embodiment, the present invention is further explained.
Each layer of device architecture of the invention is successively arranged from bottom to up, comprising: substrate 101, low temperature nitride gallium nucleating layer
102, nitride buffer layer 103, gallium nitride channel layer 104, aluminum gallium nitride barrier layer 105, drain electrode 106, source electrode 107, grid electricity
Pole 108 and dielectric layer 110, wherein drain electrode 106 and source electrode 107 are lived apart the both ends of gate electrode 108, gate electrode 108 and gallium aluminium
It is additionally provided with dielectric layer 112 between nitrogen barrier layer 105, forms two dimension between gallium nitride channel layer 104 and aluminum gallium nitride barrier layer 105
Electron gas channel 109.Device architecture of the invention is prepared by the following method:
Embodiment 1
(1) using MOCVD technology and equipment in substrate (insulation or semi-insulated sapphire, silicon, silicon carbide, gallium nitride, oxygen
Change zinc or diamond etc.) material progress AlGaN/GaN heterogenous junction epitaxy.The technology is general traditional technology, and AlGaN/GaN is heterogeneous
Junction structure successively includes GaN buffer layer (102), low temperature GaN nucleating layer (103), GaN channel layer (104), AlGaN barrier functions
The channel (110) for the high concentration 2DEG that layer (105) and interface are formed.
(2) it is deposited using plasma-reinforced chemical deposition method (PECVD) on above-mentioned AlGaN/GaN heterojunction material surface
Layer of sinxOr SiO2Film layer is as dielectric layer, with a thickness of 100-200nm.
(3) above-mentioned material is subjected to organic washing, uses lithography and etching technology by hetero-junctions both ends after cleaning
Thin film dielectric layer is dispelled, remaining place retains photoresist coating, forms source-drain electrode groove.
(4) above-mentioned material is subjected to organic washing, metal deposit is carried out using electron beam evaporation technique after cleaning.According to
Secondary deposit Germanium (Ge), titanium (Ti), aluminium (Al), titanium (Ti) and golden (Au) five kinds of metals, the thickness of five layers of metal layer be respectively 3nm,
20nm, 1500nm, 30nm and 100nm.The multiple layer metal above photoresist is dispelled using metal-stripping equipment after vapor deposition
Fall, forms the pattern for only having above-mentioned hetero-junctions both ends just to there is the multiple layer metal.
(5) above-mentioned material is subjected to organic washing, above-mentioned material is made annealing treatment after cleaning, annealing temperature is
700-900 DEG C, annealing time 10-60s.
(6) above-mentioned material is subjected to organic washing, it will be among hetero-junctions using lithography and etching technology after cleaning
Thin film dielectric layer is dispelled, remaining place retains photoresist coating, forms gate electrode groove.
(7) above-mentioned material is subjected to organic washing, metal deposit is carried out using electron beam evaporation technique after cleaning.According to
Secondary deposition nickel (Ni), platinum (Pt), golden (Au) and four kinds of metals of titanium (Ti), thickness distinguish 15nm, 20nm, 5000nm and 5nm.It steams
The multiple layer metal above photoresist is dispelled using metal-stripping equipment after plating, forms grid among only above-mentioned hetero-junctions
Just there is the pattern of the multiple layer metal in electrode position.
Embodiment 2
(1) using MOCVD technology and equipment in substrate (insulation or semi-insulated sapphire, silicon, silicon carbide, gallium nitride, oxygen
Change zinc or diamond etc.) material progress AlGaN/GaN heterogenous junction epitaxy.The technology is general traditional technology, and AlGaN/GaN is heterogeneous
Junction structure successively includes GaN buffer layer (102), low temperature GaN nucleating layer (103), GaN channel layer (104), AlGaN barrier functions
The channel (109) for the high concentration 2DEG that layer (105) and interface are formed.
(2) it is deposited using plasma-reinforced chemical deposition method (PECVD) on above-mentioned AlGaN/GaN heterojunction material surface
Layer of sinxOr SiO2Film layer is as dielectric layer, with a thickness of 200nm.
(3) above-mentioned material is subjected to organic washing, uses lithography and etching technology by hetero-junctions both ends after cleaning
Thin film dielectric layer is dispelled, remaining place retains photoresist coating, forms source-drain electrode groove.
(4) above-mentioned material is subjected to organic washing, metal deposit is carried out using electron beam evaporation technique after cleaning.According to
Secondary deposition germanium-silicon alloy (GeSi), titanium (Ti), aluminium (Al), titanium (Ti) and golden (Au) five kinds of metals, the thickness point of five layers of metal layer
It Wei not 3nm, 20nm, 1500nm, 30nm and 100nm.Use metal-stripping equipment by the multilayer above photoresist after vapor deposition
Metal is dispelled, and the pattern for only having above-mentioned hetero-junctions both ends just to there is the multiple layer metal is formed.
(5) above-mentioned material is subjected to organic washing, above-mentioned material is made annealing treatment after cleaning, annealing temperature is
830 DEG C, annealing time 30s.
(6) above-mentioned material is subjected to organic washing, it will be among hetero-junctions using lithography and etching technology after cleaning
Thin film dielectric layer is removed, remaining place retains photoresist coating, forms gate electrode groove.
(7) above-mentioned material is subjected to organic washing, metal deposit is carried out using electron beam evaporation technique after cleaning.According to
Secondary deposition nickel (Ni), platinum (Pt), golden (Au) and four kinds of metals of titanium (Ti), thickness distinguish 15nm, 20nm, 5000nm and 5nm.It steams
The multiple layer metal above photoresist is dispelled using metal-stripping equipment after plating, forms grid among only above-mentioned hetero-junctions
Just there is the pattern of the multiple layer metal in electrode position.
Embodiment 3
(1) using MOCVD technology and equipment in substrate (insulation or semi-insulated sapphire, silicon, silicon carbide, gallium nitride, oxygen
Change zinc or diamond etc.) material progress AlGaN/GaN heterogenous junction epitaxy.The technology is general traditional technology, and AlGaN/GaN is heterogeneous
Junction structure successively includes GaN buffer layer (102), low temperature GaN nucleating layer (103), GaN channel layer (104), AlGaN barrier functions
The channel (109) for the high concentration 2DEG that layer (105) and interface are formed.
(2) it is deposited using plasma-reinforced chemical deposition method (PECVD) on above-mentioned AlGaN/GaN heterojunction material surface
Layer of sinxOr SiO2Film layer is as dielectric layer, with a thickness of 200nm.
(3) above-mentioned material is subjected to organic washing, uses lithography and etching technology by hetero-junctions both ends after cleaning
Thin film dielectric layer is dispelled, remaining place retains photoresist coating, forms source-drain electrode groove.
(4) above-mentioned material is subjected to organic washing, metal deposit is carried out using electron beam evaporation technique after cleaning.According to
Secondary deposition tin (Sn), titanium (Ti), aluminium (Al), titanium (Ti) and golden (Au) five kinds of metals, the thickness of five layers of metal layer be respectively 3nm,
20nm, 1500nm, 30nm and 100nm.The multiple layer metal above photoresist is dispelled using metal-stripping equipment after vapor deposition
Fall, forms the pattern for only having above-mentioned hetero-junctions both ends just to there is the multiple layer metal.
(5) above-mentioned material is subjected to organic washing, above-mentioned material is made annealing treatment after cleaning, annealing temperature is
830 DEG C, annealing time 30s.
(6) above-mentioned material is subjected to organic washing, it will be among hetero-junctions using lithography and etching technology after cleaning
Thin film dielectric layer is dispelled, remaining place retains photoresist coating, forms gate electrode groove.
(7) above-mentioned material is subjected to organic washing, metal deposit is carried out using electron beam evaporation technique after cleaning.According to
Secondary deposition nickel (Ni), platinum (Pt), golden (Au) and four kinds of metals of titanium (Ti), thickness distinguish 15nm, 20nm, 5000nm and 5nm.It steams
The multiple layer metal above photoresist is dispelled using metal-stripping equipment after plating, forms grid among only above-mentioned hetero-junctions
Just there is the pattern of the multiple layer metal in electrode position.
As known by the technical knowledge, the present invention can pass through the embodiment party of other essence without departing from its spirit or essential feature
Case is realized.Therefore, embodiment disclosed above, in all respects are merely illustrative, not the only.Institute
Have within the scope of the present invention or is included in the invention in the change being equal in the scope of the present invention.
Claims (9)
1. a kind of preparation method of the low ohm contact structures of gallium nitride HEMT structure, which comprises the steps of:
(1) unintentional doping techniques and equipment is deposited using metal organic vapor to serve as a contrast in sapphire, silicon or silicon carbide etc.
Bottom material carries out AlGaN/GaN heterogenous junction epitaxy, and AlGaN/GaN heterojunction structure successively includes GaN buffer layer (102), low temperature
The high concentration 2DEG's that GaN nucleating layer (103), GaN channel layer (104), AlGaN barrier functions layer (105) and interface are formed
Two-dimensional electron gas channel (109)；
(2) layer of sin is deposited on above-mentioned AlGaN/GaN heterojunction material surface using plasma-reinforced chemical deposition methodxAs
Dielectric layer, with a thickness of 100-200nm；
(3) above-mentioned material for obtaining step (2) carries out organic washing, will be heterogeneous using lithography and etching technology after cleaning
The thin film dielectric layer at knot both ends is dispelled, remaining place retains photoresist coating, forms source-drain electrode groove；
(4) above-mentioned material for obtaining step (3) carries out organic washing, carries out gold using electron beam evaporation technique after cleaning
Belong to deposition, be sequentially depositing X, titanium, aluminium, titanium and golden five kinds of metals, wherein X is simple substance or the conjunction of IV-A race metallic element of one kind
Gold, the thickness of five layers of metal layer are respectively 3nm, 20nm, 1500nm, 30nm and 100nm, are set after vapor deposition using metal-stripping
It is standby to dispel the multiple layer metal above photoresist, form the pattern for only having above-mentioned hetero-junctions both ends just to there is the multiple layer metal；
(5) above-mentioned material for obtaining step (4) carries out organic washing, makes annealing treatment after cleaning to above-mentioned material,
Annealing temperature is 700-900 DEG C, annealing time 10-60s；
(6) above-mentioned material for obtaining step (5) carries out organic washing, will be heterogeneous using lithography and etching technology after cleaning
The intermediate thin film dielectric layer of knot is dispelled, remaining place retains photoresist coating, forms gate electrode groove；
(7) above-mentioned material for obtaining step (6) carries out organic washing, carries out gold using electron beam evaporation technique after cleaning
Belong to deposition, be sequentially depositing four kinds of nickel, platinum, gold and titanium metals, thickness distinguishes 15nm, 20nm, 5000nm and 5nm, after vapor deposition
The multiple layer metal above photoresist is dispelled using metal-stripping equipment, forms gate electrode position among only above-mentioned hetero-junctions
Just there is the pattern of the multiple layer metal.
2. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 1, feature exist
In this kind of structure includes substrate layer (101), low temperature nitride gallium nucleating layer (102), nitride buffer layer (103), gallium nitride channel
Layer (104), aluminum gallium nitride barrier layer (105), the drain electrode (106) at both ends of living apart and the grid among source electrode (107) and the two
Electrode (108), above layers are successively arranged from bottom to up, are additionally provided with Jie between gate electrode (108) and aluminum gallium nitride barrier layer (105)
Matter layer (110), substrate layer size are 2-8inch, and material is any one in silicon, silicon carbide, gallium nitride and diamond.
3. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 2, feature exist
In, 400-700 DEG C of growth temperature of the low temperature nitride gallium nucleating layer (102), film thickness 10-50nm.
4. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 2, feature exist
In the nitride buffer layer (103) deposits the semi-insulating height that unintentional doped growing is formed using metal organic vapor
The gallium nitride film layer of quality, film thickness range are 100nm-10um.
5. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 2, feature exist
In the gallium nitride channel layer (104) deposits the semi-insulating height that unintentional doped growing is formed using metal organic vapor
The gallium nitride channel thin-film layer of quality, film thickness range are 50-200nm.
6. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 2, feature exist
In the structural formula of the aluminum gallium nitride barrier layer (105) is AlxGa1-xN, wherein 0 < x < 1, with a thickness of 5-35nm.
7. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 2, feature exist
In the drain electrode (106) and source electrode (107) of top two sides are all made of X/ titanium/aluminium/titanium/gold multilayer alloy, and wherein X is a kind of
The simple substance or alloy of IV race's element, X and aluminum gallium nitride barrier layer form N-type heavy doping, and X metal thickness is 2-10nm, drain electrode
(106) and source electrode (107) is prepared using the method for electron beam evaporation.
8. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 8, feature exist
In X/ titanium/aluminium/titanium/gold multilayer alloy and the Ohmic contact method of aluminum gallium nitride barrier layer (105) are as follows:
In a nitrogen environment, by 600 DEG C -1000 DEG C of the thermal annealing process of 15-180s time, make X/ titanium/aluminium/titanium/gold
Multilayer alloy and aluminum gallium nitride barrier layer (105) form Ohmic contact.
9. a kind of preparation method of low ohm contact structures of gallium nitride HEMT structure according to claim 2, feature exist
In the gate electrode (108) is Schottky junction structure or metal-dielertric-semiconductor structure.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571273A (en) * | 2019-07-19 | 2019-12-13 | 华南理工大学 | GaN HEMT device and method for synchronously preparing source, drain and grid |
| CN110690283A (en) * | 2019-09-24 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Homoepitaxial gallium nitride transistor device structure |
| CN114038750A (en) * | 2021-11-05 | 2022-02-11 | 西安电子科技大学芜湖研究院 | Preparation method of gallium nitride power device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1728349A (en) * | 2004-07-28 | 2006-02-01 | 中国科学院半导体研究所 | The manufacture method of aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility |
| US20070158683A1 (en) * | 2005-12-13 | 2007-07-12 | Sheppard Scott T | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
| CN103928511A (en) * | 2014-04-16 | 2014-07-16 | 中国电子科技集团公司第十三研究所 | Ohmic contact system suitable for gallium nitride component |
| CN105789047A (en) * | 2016-05-13 | 2016-07-20 | 中国科学院半导体研究所 | Preparation method of enhanced AlGaN/GaN high-electron mobility transistor |
-
2018
- 2018-11-20 CN CN201811385449.9A patent/CN109659363A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1728349A (en) * | 2004-07-28 | 2006-02-01 | 中国科学院半导体研究所 | The manufacture method of aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility |
| US20070158683A1 (en) * | 2005-12-13 | 2007-07-12 | Sheppard Scott T | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
| CN103928511A (en) * | 2014-04-16 | 2014-07-16 | 中国电子科技集团公司第十三研究所 | Ohmic contact system suitable for gallium nitride component |
| CN105789047A (en) * | 2016-05-13 | 2016-07-20 | 中国科学院半导体研究所 | Preparation method of enhanced AlGaN/GaN high-electron mobility transistor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571273A (en) * | 2019-07-19 | 2019-12-13 | 华南理工大学 | GaN HEMT device and method for synchronously preparing source, drain and grid |
| CN110571273B (en) * | 2019-07-19 | 2024-05-17 | 华南理工大学 | GaN HEMT device and method for synchronously preparing source, drain and grid |
| CN110690283A (en) * | 2019-09-24 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Homoepitaxial gallium nitride transistor device structure |
| CN114038750A (en) * | 2021-11-05 | 2022-02-11 | 西安电子科技大学芜湖研究院 | Preparation method of gallium nitride power device |
| CN114038750B (en) * | 2021-11-05 | 2022-12-02 | 西安电子科技大学芜湖研究院 | Preparation method of gallium nitride power device |
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