CN109650897B - Method for preparing aluminum nitride powder by APS plasma, aluminum nitride powder and application - Google Patents
Method for preparing aluminum nitride powder by APS plasma, aluminum nitride powder and application Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 124
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 73
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 34
- 239000007921 spray Substances 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims description 19
- 238000005507 spraying Methods 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 238000007791 dehumidification Methods 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 6
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 238000011002 quantification Methods 0.000 abstract description 3
- 238000012876 topography Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 238000012360 testing method Methods 0.000 description 15
- 229910000831 Steel Inorganic materials 0.000 description 12
- 239000010959 steel Substances 0.000 description 12
- 229910000619 316 stainless steel Inorganic materials 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000012216 screening Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
Abstract
The invention relates to a method for preparing aluminum nitride powder by APS plasma, the aluminum nitride powder and application, belonging to the technical field of materials. A method of preparing aluminum nitride powder by APS plasma, comprising: and (3) carrying out nitrogen gas powder feeding on the pretreated aluminum powder by using an APS (active plasma system) plasma spray gun, wherein the gas flow of the nitrogen gas is 20 +/-2L/min. The method enables the nuclear electron film layer of Al and the nuclear electron film layer of N to form stable AlN chemical bonds in the plasma process of the aluminum powder in the nitrogen environment to form AlN powder. The obtained AlN powder has fine granularity, good wear resistance, high strength and higher quality. The preparation method has strong flexibility and simple and convenient operation and control, and can realize the production quantification.
Description
Technical Field
The invention relates to the technical field of materials, in particular to a method for preparing aluminum nitride powder by APS plasma, the aluminum nitride powder and application.
Background
The aluminum nitride is a novel functional ceramic material, has good heat conduction performance, reliable electrical insulation performance, lower dielectric loss, dielectric constant, good thermal expansion coefficient and good corrosion resistance, is one of the best materials for packaging high-integration semiconductor substrates and electronic devices, and can not generate oxidation reaction at normal temperature and be easily hydrolyzed with water. Generally speaking, the research of the aluminum nitride powder in China has a great gap with the advanced level of China, and the commercialization of the aluminum nitride product in China starts late, and the high-quality aluminum nitride product still depends on import. Therefore, high-quality aluminum nitride plays an important role in the development of materials in China.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a method for preparing aluminum nitride powder by APS plasma, which is simple, easy to operate, strong in controllability and capable of realizing production.
The invention also provides an aluminum nitride powder prepared by the method for preparing the aluminum nitride powder by APS plasma, and the aluminum nitride powder has the advantages of fine granularity, good wear resistance, high strength and high quality.
The invention also aims to provide the application of the aluminum nitride powder in preparing electronic devices.
The technical problem to be solved by the invention is realized by adopting the following technical scheme.
The invention provides a method for preparing aluminum nitride powder by APS plasma, which comprises the following steps:
and (3) carrying out nitrogen gas powder feeding on the pretreated aluminum powder by using an APS (active plasma system) plasma spray gun, wherein the gas flow of the nitrogen gas is 20 +/-2L/min.
The invention provides an aluminum nitride powder prepared by the method for preparing the aluminum nitride powder by APS plasma.
The invention provides application of the aluminum nitride powder in preparing electronic devices.
The beneficial effects of the invention include:
the method adopts an APS plasma spray gun to carry out nitrogen double-powder feeding on aluminum powder under the condition that the gas flow of nitrogen is 20 +/-2L/min, so that the aluminum powder forms a stable AlN chemical bond with the Al nuclear electron film layer and the N nuclear electron film layer in the nitrogen environment in the plasma process to form AlN powder. The obtained AlN powder has fine granularity, good wear resistance, high strength and higher quality. The preparation method has strong flexibility and simple and convenient operation and control, and can realize the production quantification. The high-quality aluminum nitride powder provided by the invention is one of the best materials for high-integration semiconductor substrates and electronic device packages, and therefore can be applied to the preparation of electronic devices.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic diagram showing a process of converting aluminum powder into aluminum nitride powder according to an embodiment of the present invention;
FIG. 2 shows a setting stage of the nitriding atmosphere of the APS plasma torch according to the embodiment of the present invention;
FIG. 3 is a schematic view of a dry pot barrel filled with nitrogen according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an APS plasma process for producing an aluminum nitride powder according to an embodiment of the present invention;
FIG. 5 is a comparison of surface topography for an uncoated Al plate and an aluminum nitride coated Al plate;
FIG. 6 is a comparison of surface topography of an uncoated Cu plate and a Cu plate coated with aluminum nitride;
FIG. 7 is a graph comparing the surface topography of an uncoated 316 stainless steel plate and an aluminum nitride coated 316 stainless steel plate;
FIG. 8 is a comparison of the surface topography of an uncoated 45# steel plate and a 45# steel plate sprayed with aluminum nitride;
figure 9 is a comparison of the surface topography of an uncoated WC coating and a WC coating sprayed with aluminum nitride.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The method for producing an aluminum nitride powder by APS plasma, the aluminum nitride powder and the use of the aluminum nitride powder according to the embodiments of the present invention will be described in detail below.
The invention provides a method for preparing aluminum nitride powder by APS plasma, which comprises the following steps: and carrying out nitrogen double powder feeding on the pretreated aluminum powder by using an APS (active plasma treatment) plasma spray gun, wherein the gas flow of the nitrogen is 20 +/-2L/min.
Referring to fig. 1, fig. 2, fig. 3 and fig. 4, the aluminum powder is subjected to nitrogen double-feeding by using the APS plasma torch, so that the nuclear electron film layer of Al and the nuclear electron film layer of N form a stable AlN chemical bond in the nitrogen environment during the plasma process of the aluminum powder, thereby forming AlN powder. The obtained AlN powder has fine granularity, good wear resistance, high strength and higher quality. It should be noted that the APS plasma torch is a general device in the art, and the invention is not limited thereto.
Selecting spherical aluminum powder, preferably, the particle size of the spherical aluminum powder is 5-45 μm. The spherical aluminum powder with the particle size is sprayed by an APS plasma spray gun to obtain powder with small powder size and good shape uniformity. Optionally, the spherical aluminum powder has a particle size of 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, or 40 μm.
In order to ensure that the aluminum powder can form stable AlN powder in the plasma spraying process, the spherical aluminum powder is subjected to dehumidification pretreatment before spraying. In some embodiments of the invention, the aluminum powder is dried at 50-80 ℃ for 20-40 min. Optionally, the drying temperature is 60 ℃ and 70 ℃. The drying time is 30 min.
The pretreated aluminum powder is loaded into a double powder feeding system of an APS plasma spray gun, an air feeding pipe of a nitrogen cylinder is connected with a small nozzle of a spray gun opening of the APS plasma spray gun, an arc is started after a spraying process is set, and powder is fed into a dry pot barrel filled with nitrogen.
In some embodiments of the invention, the nitrogen is delivered through a nitrogen cylinder and the purity of the nitrogen reaches 99.9%. So that a nitrogen protective layer is formed at the outlet of the spray gun when the spray gun works. Through experimental study of the inventor, in order to obtain high-quality aluminum nitride powder, the gas flow rate is controlled to be 20 +/-2L/min.
Through experimental study of the inventor, in order to obtain high-quality aluminum nitride powder, the spraying process comprises the following steps: current: 650 ± 25A, voltage: 70-85V, hydrogen flow: 9.5. + -. 1L/min, argon flow: 40 +/-2L/min, spray distance: 110 +/-5 mm, powder feeding amount: 110 + -5 g/min. Further, the spraying process further comprises: the gun moving speed is as follows: 10. + -.2 mm/sec. In the process of the Al powder in the plasma, the nuclear electron film layer of the Al is broken by the high-energy plasma, and the vacancy atoms formed in the nuclear electron film layer of the Al are in the N2In the atmosphere, under the energy of plasma, the nuclear electron film layer of Al and the nuclear electron film layer of N form stable AlN chemical bond by the action of Van der Waals force, and finally form AlN powder. It should be noted that the plasma flame channel can be filled with nitrogen gas before the powder is fed.
And (3) receiving the sprayed aluminum nitride powder by using a dry pot barrel filled with nitrogen, and screening the aluminum nitride powder by using a sieve with a 400-600-mesh sieve to obtain the aluminum nitride powder with fine and uniform particle size.
Drying the undersize product, wherein the humidity of the dried aluminum nitride powder is below 50 ℃, and packaging the dried aluminum nitride powder by using a vacuum bag. In some embodiments of the present invention, the drying process may employ a drying oven.
The aluminum nitride powder prepared by the preparation method of the aluminum nitride powder provided by the invention has the advantages of fine granularity, good wear resistance, high strength and high quality. The preparation method has strong flexibility and simple and convenient operation and control, and can realize the production quantification. The high-quality aluminum nitride powder provided by the invention is one of the best materials for high-integration semiconductor substrates and electronic device packages, and therefore can be applied to the preparation of electronic devices.
The features and properties of the present invention are described in further detail below with reference to examples.
Example 1
This example provides an aluminum nitride powder prepared essentially by the following method:
spherical aluminum powder with the particle size of 25 mu m is adopted, after dehumidification treatment, an APS plasma spray gun is selected, powder feeding is carried out by adopting double powder feeding devices and double cooling devices, and the gas flow of nitrogen is 20L/min.
The spraying process comprises the following steps: current: 650A, voltage: 80V, hydrogen flow rate: 9.5L/min, argon flow: 40L/min, spray distance: 110mm, powder feeding amount: 110 g/min.
And (3) receiving the sprayed aluminum nitride powder by using a dry pot barrel filled with nitrogen, screening the aluminum nitride powder by using a sieve with a 500-mesh sieve, drying by using a drying box, and packaging by using a vacuum bag.
Example 2
This example provides an aluminum nitride powder prepared essentially by the following method:
spherical aluminum powder with the particle size of 5 mu m is adopted, after dehumidification treatment, an APS plasma spray gun is selected, powder feeding is carried out by adopting double powder feeding devices and double cooling devices, and the gas flow of nitrogen is 18L/min.
The spraying process comprises the following steps: current: 625A, voltage: 70V, hydrogen flow rate: 8.5L/min, argon flow: 38L/min, spray distance: 105mm, powder feeding amount: 105 g/min.
And (3) receiving the sprayed aluminum nitride powder by using a dry pot barrel filled with nitrogen, screening the aluminum nitride powder by using a 600-mesh sieve, drying by using a drying oven, and packaging by using a vacuum bag.
Example 3
This example provides an aluminum nitride powder prepared essentially by the following method:
spherical aluminum powder with the particle size of 45 mu m is adopted, after dehumidification treatment, an APS plasma spray gun is selected, powder feeding is carried out by adopting double powder feeding devices and double cooling devices, and the gas flow of nitrogen is 22L/min.
The spraying process comprises the following steps: current: 675A, voltage: 85V, hydrogen flow rate: 10.5L/min, argon flow: 42L/min, spray distance: 115mm, powder feeding amount: 115 g/min.
And (3) receiving the sprayed aluminum nitride powder by using a dry pot barrel filled with nitrogen, screening the aluminum nitride powder by using a 400-mesh sieve, drying by using a drying oven, and packaging by using a vacuum bag.
Example 4
This example provides an aluminum nitride powder prepared essentially by the following method:
spherical aluminum powder with the particle size of 25 mu m is adopted, after dehumidification treatment, an APS plasma spray gun is selected, powder feeding is carried out by adopting double powder feeding devices and double cooling devices, and the gas flow of nitrogen is 10L/min.
The spraying process comprises the following steps: current: 650A, voltage: 80V, hydrogen flow rate: 9.5L/min, argon flow: 40L/min, spray distance: 110mm, powder feeding amount: 110 g/min.
And (3) receiving the sprayed aluminum nitride powder by using a dry pot barrel filled with nitrogen, screening the aluminum nitride powder by using a sieve with a 500-mesh sieve, drying by using a drying box, and packaging by using a vacuum bag.
Example 5
This example provides an aluminum nitride powder prepared essentially by the following method:
spherical aluminum powder with the particle size of 100 mu m is adopted, after dehumidification treatment, an APS plasma spray gun is selected, powder feeding is carried out by adopting double powder feeding devices and double cooling devices, and the gas flow of nitrogen is 20L/min.
The spraying process comprises the following steps: current: 650A, voltage: 80V, hydrogen flow rate: 9.5L/min, argon flow: 40L/min, spray distance: 110mm, powder feeding amount: 110 g/min.
And (3) receiving the sprayed aluminum nitride powder by using a dry pot barrel filled with nitrogen, screening the aluminum nitride powder by using a sieve with a 500-mesh sieve, drying by using a drying box, and packaging by using a vacuum bag.
Example 6
This example provides an aluminum nitride powder prepared essentially by the following method:
spherical aluminum powder with the particle size of 100 mu m is adopted, after dehumidification treatment, an APS plasma spray gun is selected, powder feeding is carried out by adopting double powder feeding devices and double cooling devices, and the gas flow of nitrogen is 20L/min.
The spraying process comprises the following steps: current: 800A, voltage: 80V, hydrogen flow rate: 9.5L/min, argon flow: 40L/min, spray distance: 110mm, powder feeding amount: 110 g/min.
And (3) receiving the sprayed aluminum nitride powder by using a dry pot barrel filled with nitrogen, screening the aluminum nitride powder by using a sieve with a 500-mesh sieve, drying by using a drying box, and packaging by using a vacuum bag.
Example 7
The present embodiment provides a spraying method, including:
spherical aluminum powder with the particle size of 25 mu m is adopted, after dehumidification treatment, an APS plasma spray gun is selected, powder feeding is carried out by adopting double powder feeding devices and double cooling devices, and the gas flow of nitrogen is 20L/min.
The spraying process comprises the following steps: current: 650A, voltage: 80V, hydrogen flow rate: 9.5L/min, argon flow: 40L/min, spray distance: 110mm, powder feeding amount: 110 g/min.
Aluminum nitride powder was sprayed on the Al plate.
Example 8
This example provides a spraying method, which is different from example 7 in that aluminum nitride powder is sprayed on a Cu plate.
Example 9
This example provides a spraying method, which is different from example 7 in that an aluminum nitride powder is sprayed on a 316 stainless steel plate.
Example 10
This example provides a spraying method, which is different from example 7 in that aluminum nitride powder is sprayed on a 45# steel sheet.
Example 11
This example provides a spraying method, which is different from example 7 in that aluminum nitride powder is sprayed on the WC coating.
Comparative example 1
This comparative example provides a spray coating method using an APS gun to spray aluminum powder onto an Al plate.
Test example 1
The aluminum nitride powders obtained in examples 1 to 6 were selected, and the surface morphology thereof was analyzed to examine the strength thereof. The results show that the aluminum nitride powders prepared in examples 1 to 3 have fine particle size, good wear resistance and high strength. The aluminum nitride powders of examples 4, 5 and 6 are inferior to the aluminum nitride powder of example 3 in both abrasion resistance and strength to the aluminum nitride powders of examples 4, 5 and 6 in comparison with the aluminum nitride powders of examples 3 and 4, 5 and 6.
Test example 2
Microhardness tests were performed on the Al plate treated in example 7, the Cu plate treated in example 8, the 316 stainless steel plate treated in example 9, the 45# steel plate treated in example 10, the WC coating treated in example 11 and the Al plate treated in comparative example 1. The test results are as follows:
TABLE 1 test results
As is apparent from Table 1, the micro-hardness of the Al sheet sprayed with the aluminum nitride powder was higher than that of the Al sheet not sprayed with the aluminum nitride powder. The micro-hardness of the Cu plate, the stainless steel plate, the steel plate and the coating which are sprayed with the aluminum nitride powder is higher.
Test example 3
The Al plate treated in example 7, the Cu plate treated in example 8, the 316 stainless steel plate treated in example 9, the 45# steel plate treated in example 10, and the WC coating treated in example 11 were subjected to a roughness test under test conditions: number of scanning frames 5 μm/s, length: 300mm, width: 300 mm. The test results are shown in Table 2.
TABLE 2 roughness test results
As can be seen from table 2, the surface roughness Ra of the samples sprayed with aluminum nitride was large, indicating that the sprayed aluminum nitride had sufficient hardness and strength.
Test example 4
The Al plate treated in example 7, the Cu plate treated in example 8, the 316 stainless steel plate treated in example 9, the 45# steel plate treated in example 10, and the WC coating treated in example 11 were subjected to abrasion tests under test conditions: 320# sandpaper, 30N, wheel abrasion, 2000 times.
TABLE 3 abrasion test results
As can be seen from table 3, the sprayed aluminum nitride coating had less wear than the pure aluminum coating, indicating that the aluminum nitride coating had better wear resistance.
Test example 5
The surface topography analysis was performed on the Al plate treated in example 7, the Cu plate treated in example 8, the 316 stainless steel plate treated in example 9, the 45# steel plate treated in example 10, and the WC coating treated in example 11, and the results are shown in the figure.
FIG. 5 is a comparison of the surface topography of an unpainted Al sheet and an aluminum nitride coated Al sheet, with the top image showing the surface topography of the unpainted Al sheet and the bottom image showing the surface topography of the aluminum nitride coated Al sheet.
Fig. 6 is a comparison graph of the surface topography of the un-sprayed Cu plate and the aluminum nitride-sprayed Cu plate, the upper picture is the surface topography of the un-sprayed Cu plate, and the lower picture is the surface topography of the aluminum nitride-sprayed Cu plate.
FIG. 7 is a comparison of the surface topography of an unpainted 316 stainless steel plate and an aluminum nitride painted 316 stainless steel plate, with the top panel showing the surface topography of the unpainted 316 stainless steel plate and the bottom panel showing the surface topography of the aluminum nitride painted 316 stainless steel plate.
FIG. 8 is a comparison of the surface topography of an unpainted 45# steel plate and a painted 45# steel plate with aluminum nitride, the top panel showing the surface topography of the unpainted 45# steel plate and the bottom panel showing the surface topography of the painted 45# steel plate with aluminum nitride.
Fig. 9 is a comparison of the surface topography of the un-sprayed WC coating and the aluminum nitride-sprayed WC coating, the top panel showing the surface topography of the un-sprayed WC coating and the bottom panel showing the surface topography of the aluminum nitride-sprayed WC coating.
The embodiments described above are some, but not all embodiments of the invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (7)
1. A method of preparing aluminum nitride powder by APS plasma, comprising:
carrying out nitrogen double powder feeding on the pretreated aluminum powder by using an APS (active plasma treatment) plasma spray gun, wherein the gas flow of the nitrogen is 20 +/-2L/min;
the nitrogen powder feeding method comprises the following steps: filling the aluminum powder subjected to dehumidification pretreatment into a powder feeding system of the APS plasma spray gun, connecting an air supply pipe of a nitrogen cylinder with a small nozzle of a spray gun opening of the APS plasma spray gun, setting a spraying process, then starting an arc, and feeding the powder into a dry pot barrel filled with nitrogen; the spraying process comprises the following steps: current: 650 ± 25A, voltage: 70-85V, hydrogen flow: 9.5. + -. 1L/min, argon flow: 40 +/-2L/min, spray distance: 110 +/-5 mm, powder feeding amount: 110 plus or minus 5g/min, and the gun moving speed is 10 plus or minus 2 mm/sec.
2. The method for preparing the aluminum nitride powder by APS plasma according to claim 1, wherein the aluminum powder has a particle size of 5 to 45 μm and is spherical in shape.
3. The method for preparing the aluminum nitride powder by APS plasma according to claim 1, wherein the pretreatment comprises drying the aluminum powder at 50-80 ℃ for 20-40 min.
4. The method for producing an aluminum nitride powder by APS plasma according to claim 1, wherein the APS plasma torch ejects an aluminum nitride powder, and then the aluminum nitride powder is sieved through a 400-600 mesh sieve, and the undersize product is dried.
5. The method for producing aluminum nitride powder by APS plasma according to claim 4, wherein the humidity of the aluminum nitride powder after drying is 50 degrees or less.
6. An aluminum nitride powder produced by the method for producing an aluminum nitride powder by APS plasma according to any one of claims 1 to 5.
7. Use of the aluminum nitride powder of claim 6 for the production of electronic devices.
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