CN109643051A - A kind of light-source structure, optical projection mould group, sensing device and equipment - Google Patents
A kind of light-source structure, optical projection mould group, sensing device and equipment Download PDFInfo
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- CN109643051A CN109643051A CN201880002352.7A CN201880002352A CN109643051A CN 109643051 A CN109643051 A CN 109643051A CN 201880002352 A CN201880002352 A CN 201880002352A CN 109643051 A CN109643051 A CN 109643051A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2013—Plural light sources
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
This application provides a kind of light-source structure, it is used to emit progress three-dimensional sense survey on light beam to a measured target object.The light-source structure includes semiconductor base and multiple luminescence units for being formed on the semiconductor base.The luminescence unit is with the formal distribution of two-dimensional lattice on the semiconductor base.It is chosen in the luminescence unit and refers to subregion.If in the luminescence unit there are the transformation of luminescence unit subregion and this with reference to the related coefficient between subregion be greater than or equal to preset threshold.Then set composed by the luminescence unit subregion accounts for the product of the average value of related coefficient corresponding to the transformation of each luminescence unit subregion in the ratio and the set of whole luminescence units more than or equal to 0.25 and less than 1.
Description
Technical field
The application belongs to optical technical field more particularly to a kind of light-source structure, optical projection mould group, sensing device and sets
It is standby.
Background technique
Existing three-dimensional (Three Dimensional, 3D) sensing mould group, which generallys use, has irregular distribution luminous single
The light-source structure of member carries out three-dimensional sensing to project corresponding irregular distribution spot pattern.However, in semiconductor base
The upper luminescence unit for forming irregular distribution needs to carry out luminescence unit precise positioning, and manufacture difficulty is high.And if in order to drop
Luminescence unit distribution is designed to that regular pattern is arranged by low manufacture difficulty, then the regular spot pattern cast out can be because of phase
It is too similar to positional relationship and cannot achieve three-dimensional sensing, and if thinking applying rules arrangement luminescence unit to project irregular point
The regular distribution light that the spot pattern of cloth also needs particularly customized complicated diffraction optical element out to launch light source
Field carries out rearrangement, but such complicated diffraction optical element involves great expense, and is unfavorable for product promotion.
Summary of the invention
The application provides a kind of light-source structure, optical projection mould group, sensing device and equipment for realizing three-dimensional sensing.
The application embodiment provides a kind of light-source structure, and it is three-dimensional to be used to emit progress on light beam to a measured target object
Sensing.The light-source structure includes semiconductor base and multiple luminescence units for being formed on the semiconductor base.The hair
Light unit is with the formal distribution of two-dimensional lattice on the semiconductor base.It is chosen in the luminescence unit and refers to subregion.
If in the luminescence unit there are the transformation of luminescence unit subregion and this with reference to the related coefficient between subregion be greater than or wait
In preset threshold.Then set composed by the luminescence unit subregion accounts for each in the ratio and the set of whole luminescence units
The product of the average value of related coefficient corresponding to the transformation of a luminescence unit subregion is more than or equal to 0.25 and less than 1.
In some embodiments, the luminescence unit number for including with reference to subregion accounts for whole luminescence unit sums
Ratio is greater than or equal to 10%.
In some embodiments, described to include ten or more luminescence units with reference to subregion.
In some embodiments, described to be transformed to affine transformation, the affine transformation includes translation transformation, rotation transformation
And mirror transformation.
In some embodiments, the sum of whole luminescence units is greater than or equal to 50.
In some embodiments, the related coefficient is normalizated correlation coefficient, the preset correlation coefficient threshold
It is 0.3.
In some embodiments, the product is more than or equal to 0.3 and less than 0.5.
In some embodiments, set composed by the luminescence unit subregion accounts for the ratio of whole luminescence units and is
The luminescence unit number for including in set composed by the luminescence unit subregion accounts for the ratio of whole luminescence unit total numbers.
In some embodiments, set composed by the luminescence unit subregion accounts for the ratio of whole luminescence units and is
The sum of the area of luminescence unit subregion in the set accounts for the ratio of the entire light emitting region gross area.
In some embodiments, the luminescence unit set includes that two classes or more are carried out according to different arrangement patterns respectively
The luminescence unit set of luminescence unit arrangement, the normalizated correlation coefficient between inhomogeneous luminescence unit set is less than 0.3, together
Do not have correlation between luminescence unit in one luminescence unit set.
In some embodiments, the light-source structure includes two luminescence unit set, the same luminescence unit
Normalization of the normalizated correlation coefficient between luminescence unit in set less than 0.3, between described two luminescence unit set
Related coefficient is more than or equal to 0.3 and is less than or equal to 1.
In some embodiments, the luminescence unit is selected from vertical cavity surface emitting laser, light emitting diode and laser
In diode any one and combinations thereof.
In some embodiments, the luminescence unit is greater than 1mA by current signal lasing fluorescence, the laser current.
The application embodiment provides a kind of optical projection mould group, for projecting the patterned beam with predetermined pattern extremely
Three-dimensional sense survey is carried out on measured target object comprising light beam adjustment element, patterned optical element and such as above-mentioned any one implementation
The light-source structure that mode provides.The light beam that the light beam adjustment element is used to issue light-source structure is adjusted so that it is full
The preset propagation characteristic requirement of foot.The light field progress rearrangement that the patterned optical element is used to issue light-source structure with
Form the patterned beam with predetermined pattern.
In some embodiments, the optical projection mould group further includes driving circuit, and the driving circuit provides electric current
It is luminous to drive the luminescence unit to carry out.
In some embodiments, the light beam adjustment element includes collimating element, beam-expanding element, reflecting element, optics
One or more of microlens array group or grating.
In some embodiments, the patterned optical element include diffraction optical element, optical micro lens array or
One or more of grating.
The application embodiment provides a kind of sensing device, is used to sense the three-dimensional information of measured target object.It includes
The optical projection mould group and sensing mould group that above embodiment provides, the sensing mould group is for sensing the optics module in quilt
It surveys the predetermined pattern projected on object and the image by analyzing the predetermined pattern obtains the three-dimensional information for being tested subject matter.
In some embodiments, the sensing mould group includes camera lens, imaging sensor and image analysis processor, described
Imaging sensor senses the image that the patterned beam is formed on measured target object, described image analysis processing by camera lens
What device analysis was sensed is incident upon the image on measured target object to obtain the three-dimensional information of measured target object.
In some embodiments, the sensing device is to sense the three-dimensional information on measured target object surface and identify accordingly
The three-dimensional face authentification device of measured target object identity.
The application embodiment provides a kind of equipment, the sensing device provided including above embodiment.The equipment root
The three-dimensional information of the measured target object sensed according to the sensing device executes corresponding function.
In some embodiments, the sensing device is the three-dimensional for sensing the three-dimensional information on measured target object surface
Face authentification device, the equipment are mobile phone, the measured target object face for being sensed according to three-dimensional face authentification device
Three-dimensional information identify the identity of measured target object.
Light-source structure provided by the application embodiment, optical projection mould group, sensing device and equipment are because of the difference
The mutual arrangement position of the luminescence unit of luminescence unit set has correlation, and the luminescence unit is on a semiconductor substrate
Position can relatively easily realize accurate determination, reduce manufacture difficulty.
The additional aspect and advantage of the application embodiment will be set forth in part in the description, partially will be from following
Become obvious in description, or is recognized by the practice of the application embodiment.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the light-source structure that the application first embodiment provides.
Fig. 2 is the luminescence unit distribution schematic diagram of light-source structure described in Fig. 1.
Fig. 3 is the structural schematic diagram for the light-source structure that the application second embodiment provides.
Fig. 4 is the structural schematic diagram for the light-source structure that the application third embodiment provides.
Fig. 5 is the structural schematic diagram for the light-source structure that the 4th embodiment of the application provides.
Fig. 6 is to calculate related coefficient schematic diagram between luminescence unit set not of uniform size.
Fig. 7 is the structural schematic diagram for the light-source structure that the 5th embodiment of the application provides.
Fig. 8 is the structural schematic diagram for the light-source structure that the application sixth embodiment provides.
Fig. 9 is the structural schematic diagram for the optics module that the 7th embodiment of the application provides.
Figure 10 is the structural schematic diagram for the sensing device that the 8th embodiment of the application provides.
Figure 11 is the structural schematic diagram for the equipment that the 9th embodiment of the application provides.
Specific embodiment
Presently filed embodiment is described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the application, and should not be understood as the limitation to the application.?
In the description of the present application, it is to be understood that term " first ", " second " are only used for describing, and should not be understood as instruction or dark
Show relative importance or implicitly indicates the quantity of indicated technical characteristic or put in order.Define as a result, " first ",
The technical characteristic of " second " can explicitly or implicitly include one or more technical characteristic.In retouching for the application
In stating, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of the present application, it should be noted that unless otherwise specific regulation or limit, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integration connection;It can
To be mechanical connection, it is also possible to be electrically connected or is in communication with each other;It can be directly connected, the indirect phase of intermediary can also be passed through
Even, the connection inside two elements or the interaction relationship between two elements be can be.For the ordinary skill of this field
For personnel, the concrete meaning of above-mentioned term in this application can be understood as the case may be.
Following disclosure provides many different embodiments or example is used to realize the different structure of the application.In order to
Simplify disclosure herein, hereafter only to the component of specific examples and being set for describing.Certainly, they are merely examples, and
And purpose does not lie in limitation the application.In addition, the application can reuse reference number and/or reference word in different examples
Mother, this reuse are itself not indicate the various embodiments discussed to simplify and clearly state the application
And/or the particular kind of relationship between setting.In addition, the application in the following description provided by various specific techniques and material only
For the example for realizing technical scheme, but those of ordinary skill in the art should be aware that the technical solution of the application
It can be realized by other techniques for not describing hereafter and/or other materials.
Further, described feature, structure can be incorporated in one or more embodiment party in any suitable manner
In formula.In the following description, many details are provided so as to fully understand presently filed embodiment.However, this
Field technical staff will be appreciated that even if without one or more in the specific detail, or using other structures, group
Member etc. can also practice the technical solution of the application.In other cases, it is not shown in detail or describes known features or operation
To avoid the emphasis of fuzzy the application.
It should be understood that embodiments described herein and/or method are exemplary in itself, it is not construed as pair
The limitation of technical scheme.Embodiment or method described herein are only that the application the relevant technologies thought is covered
One of numerous technical solutions are a variety of, therefore each step of described method and technology scheme can be according to being indicated
Order executes, and can execute, may be performed simultaneously, or be omitted in some cases, above-mentioned change according to other order
It is regarded as the range that the application technical solution claimed is covered.
As shown in Figure 1, the application first embodiment provides a kind of light-source structure 1, for emitting light beam to one tested
Three-dimensional sense survey is carried out on object.The light beam can be the light beam with specific wavelength according to sensing principle and application scenarios.
In the present embodiment, the light beam is used to sense the three-dimensional information of measured target object, can be infrared or near-infrared wavelength light
Beam, wave-length coverage are 750 nanometers (Nanometer, nm) to 1650nm.
The light-source structure 1 includes semiconductor base 10, the multiple luminescence units being formed on the semiconductor base 10
12, anode 14 and cathode 16.The luminescence unit 12 is the semiconductor structure that can be shone under electric excitation effect, passes through light
The techniques such as quarter, etching and/or Metallo-Organic Chemical Vapor deposition are formed on the semiconductor base 10.For example, described shine
Unit 12 can be, but be not limited to, vertical cavity surface emitting laser (Vertical Cavity Surface Emitting
Laser,VCSEL).The anode 14 and cathode 16 are separately positioned in the opposite both ends of the surface of the semiconductor base 10, to lead
Entering current signal, to excite the luminescence unit 12 to carry out luminous.The excitation current is greater than 1mA.
It is understood that in other embodiments, the luminescence unit 12 can also be light emitting diode (Light
Emitting Diode, LED) or laser diode (Laser Diode, LD).Therefore, the luminescence unit 12 be selected from VCSEL,
In LED and LD any one and combinations thereof.
Also referring to Fig. 1 and Fig. 2, the luminescence unit 12 is with the formal distribution of two-dimensional lattice in the semiconductor base
In 10 light emitting region, the non-equidistant arrangement on semiconductor base 10 of wherein at least three adjacent light-emitting units 12.It is described complete
Portion's luminescence unit 12 has correlation on the whole.
The correlation for assessing arrangement pattern composed by the multiple luminescence unit 12 be usually pass through calculate it is the multiple
Related coefficient f between luminescence unit 12nIt carries out, if the related coefficient f being calculatednMore than or equal to preset threshold, then
Think that there is correlation between the luminescence unit 12.
The related coefficient fnCalculation formula can be but be not limited to normalizated correlation coefficient formula (Normalized
Correlation Coefficient, NCC), expression formula is as follows:
Wherein,The R0For according to pre-
If the luminescence unit 12 that condition is arbitrarily chosen in all luminescence units 12 on semiconductor base 10 refers to subregion, with described
Luminescence unit 12 refers to subregion R0Entire 10 light emitting region of semiconductor base is traversed in addition to R0Other parts in addition simultaneously calculate institute
It states luminescence unit 12 and refers to subregion R0With the luminescence unit subregion R passed through in ergodic processnRelated coefficient fn.It is described H is the luminescence unit 12 investigated
Subregion RnHeight, W is the 12 subregion R of luminescence unit that is investigatednWidth.The selection luminescence unit 12 refers to sub-district
Domain R0Preset condition be selected luminescence unit 12 accounted for reference to 12 numbers of luminescence unit that subregion includes all shine it is single
The ratio of 12 sum of member is more than or equal to 10% or selected luminescence unit 12 includes ten or more with reference to subregion and shines
Unit 12.The sum of the whole luminescence unit 12 is greater than or equal to 50.
It is understood that the luminescence unit 12 refers to subregion R0Using the side translated in plane right-angle coordinate
Formula is traversed.When calculate the normalizated correlation coefficient of the luminescence unit 12 in order to exclude arrangement pattern described in hair
Influence of the background area to normalizated correlation coefficient other than light unit 12, before being calculated in the luminescence unit 12
The heart is that origin expands the region of luminescence unit 12, to avoid when 12 physical size of luminescence unit is smaller, is arranged because entire
Background area specific gravity is excessive in cloth pattern, and it is luminous that the normalizated correlation coefficient after above-mentioned formula calculates can not be reflected
True correlation between unit 12.For example, the lower luminescence unit 12 of correlation is arranged, pattern can also calculate higher normalizing
Change related coefficient.After the above-mentioned 12nd area extension of a field to luminescence unit the specific gravity of background area is reduced, calculates
The normalizated correlation coefficient of the arrangement pattern of luminescence unit 12 can reflect the practical correlation between luminescence unit 12 to the maximum extent
Property.12 region of each luminescence unit is expanded with identical scale, and the degree of expansion should meet adjacent hair after expansion
12 region of light unit does not overlap.
Alternatively, it is also possible to only take luminescence unit 12 with reference to son when related coefficient calculating is normalized according to above-mentioned formula
Region R0With traversed luminescence unit subregion RnCorresponding coordinate in region shared by the interior luminescence unit 12, without taking background
The corresponding coordinate in region.That is, R (i, j)=1 (i, j take corresponding coordinate in region shared by luminescence unit), to exclude to return in calculating
Background area is influenced caused by 12 true correlation of luminescence unit when one change related coefficient.
It is understood that in other embodiments, the luminescence unit 12 refers to subregion R0It can also be sat in pole
It is traversed in a manner of being rotated around coordinate origin in mark system.
The normalizated correlation coefficient f calculated according to above-mentioned normalizated correlation coefficient formulanValue range be 0≤fn
≤1.If fn=0, illustrate that selected luminescence unit 12 refers to subregion R0In luminescence unit 12 and traversal when pass through shine
12 subregion R of unitnIn luminescence unit 12 be staggered completely without any coincidence, i.e., the described luminescence unit 12 refers to subregion
R0With 12 subregion R of luminescence unitnIt is completely uncorrelated.
If fnThe selected luminescence unit 12 of=1 explanation refers to subregion R0In luminescence unit 12 and when traversal pass through
12 subregion R of luminescence unitnIn luminescence unit 12 it is the same, i.e., the described luminescence unit 12 refers to subregion R0With luminous list
12 subregion R of membernIt is perfectly correlated.
If 0 < fnThe selected luminescence unit 12 of < 1 explanation refers to subregion R0In luminescence unit 12 and when traversal pass through
12 subregion R of luminescence unitnIn luminescence unit 12 partially overlap, i.e., the luminescence unit 12 refers to subregion R0With luminous list
12 subregion R of membernPart is related, the normalizated correlation coefficient fnIt is more big, illustrate selected luminescence unit 12 with reference to sub-district
Domain R0In luminescence unit 12 and the 12 subregion R of luminescence unit that passes through when traversalnIn luminescence unit 12 overlap more
More, i.e., the described luminescence unit 12 refers to subregion R0With 12 subregion R of luminescence unitnBetween correlation it is higher.
If the normalizated correlation coefficient fn>=0.3, then it is believed that the luminescence unit 12 refers to subregion R0With luminous list
12 subregion R of membernCorrelation has correlation between the luminescence unit 12.If the normalizated correlation coefficient fn>=0.5, then may be used
Think that the luminescence unit 12 refers to subregion R0With 12 subregion R of luminescence unitnIt is highly relevant, between the luminescence unit 12
With high correlation.
In the present embodiment, the related coefficient is normalizated correlation coefficient fn, the preset threshold is 0.3, i.e. institute
It states luminescence unit 12 and refers to subregion R0The normalizated correlation coefficient f being calculated if it exists in ergodic processn>=0.3, or
Person says that the luminescence unit 12 refers to subregion R0The normalizated correlation coefficient f being calculated in ergodic processnPeak value
fn_max>=0.3 it is believed that have correlation on the whole between the luminescence unit 12.
Because having correlation, position energy of the luminescence unit 12 on semiconductor base 10 between the luminescence unit 12
It is enough easier to determine, reduces manufacture difficulty.
As shown in figure 3, the second embodiment of the application provides a kind of light-source structure 2, in first embodiment
Light-source structure 1 it is essentially identical, in addition to described in considering when the main distinction is to assess the correlation between the luminescence unit 22
It is gone back other than the normalizated correlation coefficient of luminescence unit 22 while considering to be greater than or equal to preset normalizated correlation coefficient threshold value
Luminescence unit 22 accounts for the ratio of whole luminescence units 22 more objectively to assess the correlation between the luminescence unit 22.
The strength of correlation function for assessing correlation power between the luminescence unit 22 is defined as a result,Wherein a accounts for the list that all shines for the luminescence unit 22 that related coefficient is greater than or equal to preset correlation coefficient threshold
The ratio of member 22, calculation formula areWherein R0For the hair chosen according to preset condition
Light unit 22 refers to subregion, refers to subregion R with the luminescence unit 220Traverse entire 20 light emitting region of semiconductor base simultaneously
It calculates the luminescence unit 22 and refers to subregion R0With entire 20 light emitting region of semiconductor base in addition to R0Other parts in addition
Related coefficient, it is assumed that there are N number of and R0Between related coefficient be greater than or equal to preset correlation coefficient number threshold value luminescence unit 22
Subregion is expressed as R1,…,RN, then the P is indicated in entire 20 light emitting region of semiconductor base and the luminescence unit
22 refer to subregion R0Between related coefficient be greater than or equal to preset correlation coefficient number threshold value all luminescence units 22 set
{R0,R1,…,RN, the set P={ R0,R1,…,RNIn luminescence unit 22 between have correlation.The S is entire
The set of whole luminescence units on semiconductor base 20.The ratio can be but be not limited to the luminescence unit 22 with correlation
Number account for the ratios of whole 22 total numbers of luminescence unit, or the region area where the luminescence unit 22 with correlation accounts for
The ratio in the entire total face in light emitting region is assessed, and can be selected according to the actual situation.
The P and S can be 22 numbers of luminescence unit in the corresponding set of luminescence unit 12.If the luminescence unit 22 is
Even distribution, the P and S are also possible to corresponding luminescence unit 22 and gather region area.It is understood that P and S herein
R is directed in calculating0,R1,…,RNIn the lap that is likely to occur be only calculated once without computing repeatedly.
It is describedFor the set P={ R0,R1,…,RNIn all 22 subregion R of luminescence unitn(0 < n≤N) with it is described
Luminescence unit 22 refers to subregion R0Between normalizated correlation coefficient fnAverage value, calculation formula is
Wherein fnFor Rn(0 < n≤N) and R0Between normalizated correlation coefficient.
In the present embodiment, because the preset correlation coefficient threshold is 0.3, that is, work as fnWhen >=0.3, it is believed that corresponding
22 subregion R of luminescence unitnLuminescence unit 12 and selected luminescence unit 22 in (0 < n≤N) refer to subregion R0Between
With correlation, the 22 subregion R of luminescence unitn(0 < n≤N) can operate with strength of correlation function defined aboveTo assess the overall relevancy of all luminescence units 22 on the semiconductor base 10.
The a is the ratio that the luminescence unit 22 with correlation accounts for whole luminescence units 22, so 0≤a≤1.It is describedFor normalizated correlation coefficient fnAverage value, soTherefore, strength of correlation functionIt is calculated
Strength of correlation value F out also meets value range 0≤F≤1.If 0≤F of the strength of correlation value F satisfaction of definition herein <
0.1, whole luminescence units 22 on the semiconductor base 10 are uncorrelated on the whole.If the strength of correlation value F meets 0.1
≤ F < 0.25, whole luminescence units 22 on the semiconductor base 20 weak correlation on the whole.If the strength of correlation value F is full
Foot 0.25≤F < 0.5, whole luminescence units 22 on the semiconductor base 20 have correlation on the whole.If the correlation
Intensity value F meets 0.5≤F≤1, the strong correlation on the whole of whole luminescence units 22 on the semiconductor base 20.
It is understood that being calculated for luminescence unit 22 identical on the semiconductor base 20 arrangement pattern
The strength of correlation value F come may refer to subregion R with luminescence unit 22 selected in calculating process0Difference and become
Change, be not always consistent, so the phase of whole luminescence units 22 on the whole on judging the semiconductor base 20
Subregion R is referred to according to all luminescence units 22 for meeting preset condition when closing property intensity0The strength of correlation calculated
Maximum value in value F is judged.That is, referring to sub-district simply by the presence of the luminescence unit 22 chosen according to preset condition
Domain R0, so that referring to subregion R according to the luminescence unit 220The strength of correlation value F calculated meets correlation defined above
Property intensity correspondence range be it is believed that the semiconductor base 20 on luminescence unit 22 on the whole have corresponding correlation
Intensity.
In the present embodiment, whole luminescence units 22 on the semiconductor base 20 have correlation on the whole.Institute
State the maximum value F of the strength of correlation value F of whole luminescence units 22 on the wholemaxMore than or equal to 0.25 less than 1.Exist
Subregion R is referred to according to the luminescence unit 22 that preset condition is chosen0The strength of correlation value F calculated is greater than or equal to
0.25 and less than 1.
It is understood that in other embodiments, whole luminescence units 22 on the semiconductor base 20 are whole
It is upper that there is strong correlation.The maximum value F of the strength of correlation value F of the whole luminescence unit 22 on the wholemaxIt is greater than or equal to
0.5 and less than 1.Exist and refers to subregion R according to the luminescence unit 22 that preset condition is chosen0The correlation calculated is strong
Angle value F is more than or equal to 0.5 and less than 1.
As shown in figure 4, the third embodiment of the application provides a kind of light-source structure 3, in second embodiment
Light-source structure 2 it is essentially identical, the main distinction is to refer to subregion R calculating selected luminescence unit 320With traversed
30 light emitting region other parts of semiconductor base between related coefficient fnWhen investigate is the luminescence unit 32 with reference to son
Region R0With the 32 subregion R of luminescence unit traversednThe luminescence unit 32 that (0 < n≤N) is obtained after transformation T changes son
Region R 'nNormalizated correlation coefficient f between (0 < n≤N)n.The transformation T can be but be not limited to affine transformation, described affine
Transformation includes the transformation such as translation, rotation, mirror image.In the present embodiment, the transformation T is ginseng with plane right-angle coordinate
According to.
That is, original 32 subregion R of luminescence unit on the semiconductor base 30n(0 < n≤N) is after the transformation T
Obtained luminescence unit 32 converts subregion R 'nSubregion R is referred to selected luminescence unit 320Between normalization it is related
Coefficient fnMeet fnWhen >=0.3, by the 32 subregion R of luminescence unitn32 numbers of luminescence unit of (0 < n≤N) are returned with corresponding
One changes related coefficient fnApply to strength of correlation function defined aboveTo assess institute on the semiconductor base 30
There is the overall relevancy of luminescence unit 32.In the present embodiment, the normalizated correlation coefficient fnExpression formula it is as follows:
Wherein,H is is examined
The 32 subregion R of luminescence unit examinednThe height of (0 < n≤N), W are the 32 subregion R of luminescence unit that is investigatednThe width of (0 < n≤N)
Degree.
As shown in figure 5, the 4th embodiment of the application provides a kind of light-source structure 4, in first embodiment
Light-source structure 1 it is essentially identical, it is more that the main distinction is that whole luminescence units 42 on the semiconductor base 40 can be divided into
A luminescence unit set 420, herein multiple refer to two and more than two.Have between the luminescence unit set 420
Correlation.At least exist between the luminescence unit 42 inside the luminescence unit set 420 and does not have correlation.
Correlation between the luminescence unit set 420 can be by calculating the normalizing between luminescence unit set 420
Change related coefficient fnTo be assessed.Calculation formula as set forth above, it is possible to are as follows:
Wherein, R0And RnRespectively need to calculate normalization relative coefficient fnTwo luminescence unit set 420,H is the luminescence unit collection investigated
Close 420 height, W for the luminescence unit set 420 investigated width.The normalizated correlation coefficient fnNumberical range be
0≤fn≤ 1, work as fnWhen < 0.3, it is believed that do not have correlation between the luminescence unit set 420;Work as fnWhen >=0.3, it is believed that institute
Stating has correlation between luminescence unit set 420;Work as fnWhen >=0.5, it is believed that height phase between the luminescence unit set 420
It closes.
In the present embodiment, 42 numbers of luminescence unit included by the luminescence unit set 420 be more than or equal to 10, or
The ratio that the number of luminescence unit 42 included by person accounts for whole 42 total numbers of luminescence unit is greater than or equal to 10%.It is described to shine
0.3≤f of normalizated correlation coefficient between unit set 420n<1。
It is understood that in other embodiments, being also possible between the luminescence unit set 420 highly relevant
, 0.5≤f of normalizated correlation coefficient between the luminescence unit set 420n<1。
It is understood that as shown in fig. 6, the if area of the luminescence unit set 420 and luminescence unit set 421 that are divided
Domain size and/or included 42 numbers of luminescence unit are inconsistent, then can be used one of them luminescence unit set 420
Periphery is extended around to form a sufficiently large region 400 and can accommodate another luminescence unit set 421 around the hair
The periphery of light unit set 420 translates one week.At this point, by the luminescence unit set 421 as one with reference to subregion according to
Above-mentioned normalizated correlation coefficient fnFormula traversed in the extended area 400 calculate in whole region 400 it is described shine
Normalizated correlation coefficient f between unit 42nAs returning between above-mentioned luminescence unit set 420 and luminescence unit set 421
One changes related coefficient fn.It should be noted that in above-mentioned normalizated correlation coefficient fnCalculating process in need extended area
Coordinate value all values in 400 other than luminescence unit set 420 and luminescence unit set 421 are 0, to eliminate expansion
To the normalizated correlation coefficient between luminescence unit 42 existing for script in luminescence unit set 420 and luminescence unit set 421
fnCaused by influence.
It should be noted that between the luminescence unit set 420 there is correlation can be the list that shines described in every two
Phase cross-correlation between member set 420, being also possible at least exist between two luminescence unit set 420 has the case where correlation
And and not all luminescence unit set 420 it is all related each other.
The correlation between luminescence unit 42 inside the luminescence unit set 420 uses to be remembered in first embodiment
The strength of correlation function of loadIt is assessed, specific calculating process please refers to pair in above-mentioned first embodiment
Content is answered, details are not described herein again.In the present embodiment, there are shining inside luminescence unit set 420 described at least one
Do not have correlation between unit 42, the correlation intensity value F between whole luminescence units 42 in the luminescence unit set 420≤
0.1。
As shown in fig. 7, the 5th embodiment of the application provides a kind of light-source structure 5, in the 4th embodiment
Light-source structure 4 it is essentially identical, the main distinction is that the luminescence unit collection uraphetine includes third class luminescence unit set 521
And the 4th class luminescence unit set 522.Do not have correlation between luminescence unit 52 in the third class luminescence unit set 521
Property.Luminescence unit 52 in the third class luminescence unit set 521 is arranged according to identical first layout viewing case.Institute
It states and does not have correlation between the luminescence unit in the 4th class luminescence unit set 522.The 4th class luminescence unit set 522
Interior luminescence unit 52 is arranged according to identical second layout viewing case, the second layout viewing case and the first layout viewing case
It is different.Do not have correlation between inhomogeneous luminescence unit set 521 and 522.That is, inhomogeneous luminescence unit set 521
And the normalizated correlation coefficient between 522 is less than 0.3.
In the present embodiment, whole luminescence units 52 on the semiconductor base 50 can be divided into nine luminescence units
Collect uraphetine.Wherein, the number of the third class luminescence unit set 521 is four, the 4th class luminescence unit set 522
Number be five.Each described luminescence unit collection uraphetine includes at least ten luminescence units 52.It is understood that
It is that the position of the third class luminescence unit set 521 and the 4th class luminescence unit set 522 can be appointing in matrix arrangement
It anticipates a lattice, as long as meeting the requirement of corresponding number and pattern of arranging.
In other embodiments, the total number of the luminescence unit collection uraphetine is not limited to nine, and arrangement mode is also unlimited
It arranges in nine grids or matrix.As long as meeting at least one third class luminescence unit set 521 and at least one institute
State the condition of the 4th class luminescence unit set 522.
As shown in figure 8, the sixth embodiment of the application provides a kind of light-source structure 6, in the 4th embodiment
Light-source structure 4 it is essentially identical, the main distinction be the light-source structure 6 include two luminescence unit set 620.It is each to shine
Do not have correlation between luminescence unit 62 in unit set 620.There is phase between the two described luminescence unit set 620
Guan Xing.That is, 0.3≤f of normalizated correlation coefficient between described two luminescence unit set 620n≤ 1, each luminescence unit 620
Normalizated correlation coefficient f between interior luminescence unit 62n<0.3.In the present embodiment, each luminescence unit set
It include at least 100 incoherent luminescence units 62 in 620.
As shown in figure 9, the 7th embodiment of the application provides a kind of optical projection mould group 7, preset for projecting to have
It is sensed in the patterned beam of pattern to measured target object.The optical projection mould group 7 includes light beam adjustment element 70, figure
Case optical element 72 and the above-mentioned first light-source structure 1 into sixth embodiment.
The light beam adjustment element 70 includes but is not limited to collimating element, beam-expanding element, reflecting element, optical microlens battle array
Column group and grating.The light beam that the light beam adjustment element 70 is used to issue light-source structure 1 is adjusted, so that it meets in advance
If propagation characteristic requirement, such as: the direction of propagation, collimation, light beam aperture etc..The patterned optical element 72 is used for light
The light field that source structure 1 issues carries out rearrangement, to form the patterning that can project predetermined pattern on measured target object
Light beam.The patterned optical element 72 includes but is not limited to diffraction optical element (Diffractive Optical
Element, DOE), one or more of optical micro lens array group or grating.In the present embodiment, the diffraction optics
Element is unfolded to form patterned beam throwing within the scope of predetermined angle after being replicated the light beam that the light-source structure 1 issues
It is incident upon on measured target object.
As shown in Figure 10, the 8th embodiment of the application provides a kind of sensing device 8, is used to sense measured target object
Three-dimensional information.The spatial information of the measured target object sensed can be used for identifying measured target object or construct measured target
The threedimensional model of object.
The sensing device 8 includes the optical projection mould group 7 as provided by above-mentioned 7th embodiment and sensing mould group 80.
The optical projection mould group 7 is for projecting particular beam to measured target object.The sensing mould group 80 includes camera lens 81, image
Sensor 82 and image analysis processor 83.Described image sensor 82 senses the patterned beam tested by camera lens 81
The image formed on object.Described image analysis processor 83 analyzes the image being incident upon on measured target object sensed
To obtain the three-dimensional information of measured target object.
In the present embodiment, the sensing device 8 is to sense the three-dimensional information on measured target object surface and identify accordingly
The three-dimensional face authentification device of measured target object identity.
The predetermined pattern that the sensing mould group 80 projects on measured target object according to the patterned beam sensed
Change in shape come analyze measured target object surface three-dimensional information and accordingly to measured target object carry out face recognition.
As shown in figure 11, the 9th embodiment of the application provides a kind of equipment 9, such as mobile phone, laptop, plate electricity
Brain, touch-control interaction screen, door, the vehicles, robot, automatic numerical control lathe etc..The equipment 9 include at least one the above-mentioned 8th
Sensing device 8 provided by embodiment.The equipment 9 is for corresponding to execution phase according to the sensing result of the sensing device 8
The function of answering.The corresponding function include but is not limited to unlock, pay after identifying user's identity, start it is preset using journey
Appointing in the mood and health condition of user is judged using depth learning technology after sequence, avoidance, identification user's countenance
It anticipates one or more.
In the present embodiment, the sensing device 8 is to sense the three-dimensional information on measured target object surface and identify accordingly
The three-dimensional face authentification device of measured target object identity.The equipment 9 is mobile phone, pen equipped with the three-dimensional face authentification device
Remember the electric terminals such as this computer, tablet computer, touch-control interaction screen, or is door, the vehicles, safety check instrument, entry and exit gate
Etc. be related to pass in and out permission equipment 9.
Compared with prior art, light-source structure 1 provided herein, optical projection mould group 7, sensing device 8 and equipment 9
Because the mutual arrangement position of the luminescence unit 12 of the different luminescence unit set 120 has correlation, the luminous list
Position of the member 12 on semiconductor base 10 can relatively easily realize accurate determination, reduce manufacture difficulty.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the application.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
The foregoing is merely the better embodiments of the application, all the application's not to limit the application
Made any modifications, equivalent replacements, and improvements etc., should be included within the scope of protection of this application within spirit and principle.
Claims (22)
1. a kind of light-source structure is used to emit progress three-dimensional sense survey, the light-source structure packet on light beam to a measured target object
The multiple luminescence units for including semiconductor base and being formed on the semiconductor base, the luminescence unit is with the shape of two-dimensional lattice
Formula is distributed on the semiconductor base, is chosen in the luminescence unit and is referred to subregion, if existing in the luminescence unit
The transformation of luminescence unit subregion and this with reference to related coefficient between subregion be greater than or equal to preset threshold, then it is described to shine
Set composed by unit subregion accounts for the change of each luminescence unit subregion in the ratio and the set of whole luminescence units
The product of the average value of corresponding related coefficient is changed more than or equal to 0.25 and less than 1.
2. light-source structure as described in claim 1, it is characterised in that: the luminescence unit number for including with reference to subregion accounts for
The ratio of whole luminescence unit sums is greater than or equal to 10%.
3. light-source structure as described in claim 1, it is characterised in that: described to include ten or more the lists that shine with reference to subregion
Member.
4. light-source structure as described in claim 1, it is characterised in that: described to be transformed to affine transformation, the affine transformation packet
Include translation transformation, rotation transformation and mirror transformation.
5. light-source structure as described in claim 1, it is characterised in that: the sum of the whole luminescence unit is greater than or equal to
50。
6. light-source structure as described in claim 1, it is characterised in that: the related coefficient is normalizated correlation coefficient, described
Preset correlation coefficient threshold is 0.3.
7. light-source structure as described in claim 1, it is characterised in that: the product is more than or equal to 0.3 and less than 0.5.
8. light-source structure as described in claim 1, it is characterised in that: set composed by the luminescence unit subregion accounts for complete
The ratio of portion's luminescence unit is that the luminescence unit number for including accounts for whole hairs in set composed by the luminescence unit subregion
The ratio of light unit total number.
9. light-source structure as described in claim 1, it is characterised in that: set composed by the luminescence unit subregion accounts for complete
The ratio of portion's luminescence unit is that the sum of the area of the luminescence unit subregion in the set accounts for the entire light emitting region gross area
Ratio.
10. light-source structure as described in claim 1, it is characterised in that: the luminescence unit set includes that two classes or more are distinguished
The luminescence unit set of luminescence unit arrangement, the normalizing between inhomogeneous luminescence unit set are carried out according to different arrangement patterns
Change related coefficient less than 0.3, does not have correlation between the luminescence unit in the same luminescence unit set.
11. light-source structure as described in claim 1, it is characterised in that: the light-source structure includes two luminescence unit set,
The normalizated correlation coefficient between luminescence unit in the same luminescence unit set is less than 0.3, described two luminous lists
Normalizated correlation coefficient between member set is more than or equal to 0.3 and is less than or equal to 1.
12. light-source structure as described in claim 1, it is characterised in that: the luminescence unit is selected from vertical cavity surface-emitting laser
In device, light emitting diode and laser diode any one and combinations thereof.
13. light-source structure as described in claim 1, it is characterised in that: the luminescence unit is by current signal lasing fluorescence, institute
Laser current is stated greater than 1mA.
14. a kind of optical projection mould group carries out three in the patterned beam to measured target object with predetermined pattern for projecting
Dimension sensing comprising light beam adjustment element, patterned optical element and the light source as described in any one of claim 1 to 13
Structure, the light beam that the light beam adjustment element is used to issue light-source structure is adjusted so that it meets preset propagation spy
Property require, the patterned optical element is used to light field that light-source structure issues carrying out rearrangement to be formed to have and default schemed
The patterned beam of case.
15. optical projection mould group as claimed in claim 14, it is characterised in that: the optical projection mould group further includes driving electricity
Road, it is luminous to drive the luminescence unit to carry out that the driving circuit provides electric current.
16. optical projection mould group as claimed in claim 14, it is characterised in that: the light beam adjustment element includes collimation member
One or more of part, beam-expanding element, reflecting element, optical micro lens array group or grating.
17. optical projection mould group as claimed in claim 14, it is characterised in that: the patterned optical element includes diffraction light
Learn one or more of element, optical micro lens array or grating.
18. a kind of sensing device is used to sense the three-dimensional information of measured target object comprising sensing mould group and such as claim
Optical projection mould group described in any one of 14 to 17, the sensing mould group is for sensing the optics module in measured target
The predetermined pattern projected on object and the image by analyzing the predetermined pattern obtain the three-dimensional information of tested subject matter.
19. sensing device as claimed in claim 18, it is characterised in that: the sensing mould group includes camera lens, imaging sensor
And image analysis processor, described image sensor sense what the patterned beam was formed on measured target object by camera lens
Image, what the analysis of described image analysis processor was sensed is incident upon the image on measured target object to obtain measured target object
Three-dimensional information.
20. sensing device as claimed in claim 18, it is characterised in that: the sensing device is sensing measured target object surface
Three-dimensional information and accordingly identify measured target object identity three-dimensional face authentification device.
21. a kind of equipment, including sensing device described in any one of claim 18 to 20, the equipment is according to the sense
The three-dimensional information for the measured target object that device is sensed is surveyed to execute corresponding function.
22. equipment as claimed in claim 21, it is characterised in that: the sensing device is for sensing measured target object surface
Three-dimensional information three-dimensional face authentification device, the equipment be mobile phone, for being sensed according to three-dimensional face authentification device
The three-dimensional information of measured target object face identify the identity of measured target object.
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