CN109638130B

CN109638130B - Light emitting device

Info

Publication number: CN109638130B
Application number: CN201811358074.7A
Authority: CN
Inventors: 钟伟荣; 富振华; 李政宪; 黄启豪
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2013-06-27
Filing date: 2013-06-27
Publication date: 2020-08-25
Anticipated expiration: 2033-06-27
Also published as: CN104253185A; CN109638130A; CN104253185B

Abstract

The invention discloses a light-emitting device, which comprises a light-emitting laminated layer, a light-emitting layer and a light-emitting layer, wherein the light-emitting laminated layer comprises a first semiconductor layer, a second semiconductor layer and a light-emitting layer, the first semiconductor layer and the second semiconductor layer are formed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is provided with a first surface, a first part is connected with the first surface, and a second part is connected with the first part; an opening penetrating the first portion of the first semiconductor layer from the upper surface; a concave part is connected with the opening and penetrates through the second semiconductor layer, the light-emitting layer and the second part of the first semiconductor layer, wherein the concave part has a width larger than that of the opening so that the bottom of the concave part is exposed out of a second surface of the first semiconductor layer and is opposite to the first surface; and an electrode corresponding to the opening and located in the recess.

Description

Light emitting device

The application is a divisional application of Chinese invention patent application (application number: 201310262787.4, application date: 2013, 06 and 27, invention name: light-emitting device).

Technical Field

The present invention relates to a light emitting device, and more particularly, to a light emitting device for transferring a light emitting stack from a growth substrate to a conductive substrate.

Background

The Light Emitting Diode (LED) emits light based on the principle that electrons move between an n-type semiconductor and a p-type semiconductor to release energy. Light emitting diodes are also referred to as cold light sources because they emit light on a principle different from incandescent lamps that heat filaments. Furthermore, the better environmental tolerance, longer lifetime, lighter and portable, and lower power consumption of leds make them an alternative light source in the lighting market. Light emitting diodes are used in various fields such as traffic signs, backlight modules, street lamps, and medical devices, and have gradually replaced conventional light sources.

Light emitting diodes have a light emitting stack epitaxially grown on a conductive substrate or on an insulating substrate. The led with the conductive substrate can form an electrode on top of the light emitting stack, which is generally called a vertical led. The led with the insulating substrate is required to expose two semiconductor layers with different polarities through an etching process, and electrodes are respectively formed on the two semiconductor layers, which is generally called a horizontal led. The vertical light emitting diode has the advantages of small light shielding area of an electrode, good heat dissipation effect and no additional etching epitaxial manufacturing process, but the current conductive substrate for epitaxial growth has the problem of easy light absorption, thereby affecting the light emitting efficiency of the light emitting diode. The horizontal light emitting diode has the advantages that the insulating substrate is also a transparent substrate, light can be emitted from all directions of the light emitting diode, but the horizontal light emitting diode also has the defects of poor heat dissipation, large light shielding area of an electrode, light emitting area loss of an epitaxial etching manufacturing process and the like.

The light emitting diode can be further connected with other elements to form a light emitting device. The light emitting diode can be connected to the sub-carrier through the side with the substrate, or formed between the sub-carrier and the light emitting diode by solder or glue material to form a light emitting device. In addition, the submount may further include a circuit electrically connected to the electrodes of the led through a conductive structure such as a metal wire.

Disclosure of Invention

In order to solve the above problems, the present invention discloses a light emitting device, comprising a light emitting stack including a first semiconductor layer, a second semiconductor layer and a light emitting layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer has a first surface, a first portion connected to the first surface, and a second portion connected to the first portion; an opening penetrating the first portion of the first semiconductor layer from the upper surface; a concave part is connected with the opening and penetrates through the second semiconductor layer, the light-emitting layer and the second part of the first semiconductor layer, wherein the concave part has a width larger than that of the opening so that the bottom of the concave part is exposed out of a second surface of the first semiconductor layer and is opposite to the first surface; and an electrode corresponding to the opening and located in the recess.

Drawings

FIGS. 1A to 1H illustrate a method of fabricating a light emitting device according to a first embodiment of the present invention;

FIG. 2 is a diagram showing a light emitting device according to a second embodiment of the present invention;

FIG. 3 is a diagram showing a light emitting device according to a third embodiment of the present invention;

fig. 4 is a view showing an electrode configuration of a light emitting device according to a first embodiment of the present invention;

fig. 5 is a view showing an electrode configuration of a light emitting device according to a fourth embodiment of the present invention;

fig. 6 is a view showing an electrode configuration of a light-emitting device according to a fifth embodiment of the present invention;

fig. 7 is a view showing an electrode configuration of a light-emitting device according to a sixth embodiment of the present invention;

fig. 8 is a view showing an electrode configuration of a light-emitting device according to a seventh embodiment of the present invention;

fig. 9 is a view showing an electrode configuration of a light-emitting device according to an eighth embodiment of the present invention;

fig. 10 is a view showing an electrode configuration of a light-emitting device according to a ninth embodiment of the present invention.

Description of the symbols

100 light emitting device

101 growth substrate

102 first semiconductor layer

102a first surface

102b first part

102c second part

102d second surface

103 buffer layer

104 light emitting layer

105 concave part

106 second semiconductor layer

108 light emitting laminate

110 electrode

110a upper surface

110b contact area

110c exposed area

112 conductive layer

114 insulating structure

114a upper surface

115 routing electrode

116 Barrier layer

116a upper surface

117 conductive structure

118 reflective layer

120 joining structure

122 conductive substrate

124 opening

126 coarsening structure

200 light emitting device

204 opening

210 electrode

211 bonding wire electrode

300 light emitting device

322 conductive substrate

320 jointing structure

318 reflecting layer

308 conductive layer

311 electrode

314 insulating structure

314a insulating layer

314b insulation part

316 conductive channel

111a second extension electrode

111b first extension electrode

500 light emitting device

510 routing electrode

511 extension electrode

517 conductive structure

522 conductive substrate

600 light emitting device

610 routing electrode

611 extended electrode

617 conductive structure

622 conductive substrate

700 light emitting device

710 routing electrode

711 extended electrode

717 conductive structure

722 conductive substrate

800 light emitting device

810a bonding electrode

810b bonding electrodes

811 extended electrode

811a radial branch

811b radial branches

811c radial branches

811d radial branch

822 conductive substrate

817 electrically conductive structure

900 light emitting device

922 conductive substrate

910a bonding wire electrode

910b bonding electrodes

911 extension electrode

911a radiation branch

911b radiation branch

917 conducting structure

1000 light emitting device

1022 conductive substrate

1011 extending electrode

1010a routing electrode

1010b routing electrode

1011a first radial branch

1011b second radial limb

W₁、W₂、W₃Width of

Detailed Description

Referring to fig. 1A to fig. 1H, a method for manufacturing a light emitting device according to a first embodiment of the invention is shown. As shown in fig. 1A, a light emitting stack 108 is epitaxially formed on a growth substrate 101, and the light emitting stack 108 may include a first semiconductor layer 102, a second semiconductor layer 106, and a light emitting layer 104 disposed between the first semiconductor layer 102 and the second semiconductor layer 106. The light emitting stack 108 may be a nitride light emitting stack, the material may be selected from the group consisting of aluminum (Al), indium (In), gallium (Ga), and nitrogen (N), the growth substrate 101 may be a transparent insulating substrate such as a sapphire (sapphire) substrate, or a conductive substrate such as a silicon (Si) or silicon carbide (SiC) substrate, and a buffer layer 103 may be formed on the growth substrate 101 before the light emitting stack 108 is formed In order to reduce the lattice difference between the growth substrate 101 and the light emitting stack 108. The material of the light emitting stack 108 may be selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), phosphorus (P), and arsenic (As), and the growth substrate may be GaAs. The first semiconductor layer 102, the light emitting layer 104, and the second semiconductor layer 106 are epitaxially grown on the growth substrate 101, and the first semiconductor layer 102 may be an n-type semiconductor and the second semiconductor layer 106 may be a p-type semiconductor. The structure of the light emitting stack 108 may include a Single Heterostructure (SH), a Double Heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW).

Referring to fig. 1B, a recess 105 is formed to penetrate the second semiconductor layer 106 and the light emitting layer 104 and expose the first semiconductor layer 102. The recess 105 has a pattern, and an electrode 110 corresponding to the pattern of the recess 105 is formed in the recess 105, and then a conductive layer 112 is formed on the second semiconductor layer 106. The electrode 110 is electrically connected to only the first semiconductor layer 102, and both sides of the electrode 110 and the sidewall of the recess 105 have a gap as seen in the cross-sectional view, so that the electrode 110 is insulated from the light-emitting layer 104 and the second semiconductor layer 106. The conductive layer 112 is in ohmic contact with the second semiconductor layer 106, and may be a transparent conductive layer such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or aluminum-doped zinc oxide (AZO), or a metal material such as nickel (Ni), platinum (Pt), palladium (Pd), silver (Ag), or chromium (Cr). The electrode 110 may include a metal such as aluminum (Al), titanium (Ti), chromium (Cr), platinum (Pt), gold (Au), or a combination thereof.

Referring to fig. 1C, a barrier layer 116 is formed overlying the conductive layer 112 and an insulating structure 114 is formed overlying the electrode 110. The barrier layer 116 covers all surfaces of the conductive layer 112 except for the surfaces that contact the second semiconductor layer 106. The insulating structure 114 substantially corresponds to the pattern of the electrode 110, and fills the gap between the two sides of the electrode 110 and the sidewall of the recess 105. The upper surface 114a of the insulating structure 114 is substantially coplanar with the upper surface 116a of the barrier layer 116, and the insulating structure 114 is horizontally surrounded by the barrier layer 116 except for the portion filled into the recess 105. The insulating structure 114 comprises a transparent insulating material coated with a single layer of silicon dioxide by evaporation or sputtering, or spin-on-glass (SOG)(SiO₂) Single layer titanium dioxide (TiO)₂) Or a single layer of silicon nitride (Si)₃N₄) And then curing to form the product. The barrier layer 116 may be one or more layers including, for example, titanium (Ti), tungsten (W), platinum (Pt), titanium Tungsten (TiW), or combinations thereof.

Referring to fig. 1D, a reflective layer 118 is formed on the plane formed by the upper surface 114a of the insulating portion 114 and the upper surface 116a of the barrier layer 116. The reflective layer 118 may include aluminum (Al).

Referring to fig. 1E, a conductive substrate 122 is provided, and the conductive substrate 122 is bonded to the metal layer 118 through a bonding structure 120. The bonding structure 120 may include a metal such as gold (Au), indium (In), nickel (Ni), titanium (Ti), or a combination thereof. Then, a process of removing the growth substrate 101 is performed. The conductive substrate 122 may include a semiconductor material such as silicon (Si), or a metal material such as copper (Cu), tungsten (W), aluminum (Al), or the surface of the conductive substrate 122 may have Graphene (Graphene).

Referring to fig. 1F, a laser (not shown) may be provided from the back side of the growth substrate 101, and when the energy-decomposable buffer layer 103 is, for example, undoped or unintentionally doped gallium nitride (GaN), nitrogen (N) in the GaN may be vaporized by the energy of the laser to decompose the buffer layer 103, so that the growth substrate 101 may be easily removed to expose the first semiconductor layer 102.

Referring to fig. 1G, the buffer layer 103 remaining on the first semiconductor layer 102 may be further cleaned. When the buffer layer 103 is undoped or unintentionally doped gan, the cleaning of the step is mainly performed by Inductively Coupled Plasma (ICP) etching, and then hydrogen chloride (HCl) or hydrogen peroxide (H) may be used in combination, since the nitrogen of gan is vaporized in the above-mentioned process of removing the growth substrate 101 by laser, so as to remove the residual gan₂O₂) The surface of the first semiconductor layer 102 is cleaned intensively.

Referring to fig. 1H, an etching process is performed to form a roughened structure 126 on the first surface 102a of the first semiconductor layer 102, wherein the roughened structure 126 is a regular or irregular roughened surface having a roughness of about 0.5-1 μm, and the electrode 11 is removedThe first semiconductor layer 102 partially over 0 to form an opening 124. The recess 105 has a width W₁A width W greater than the opening 124₂Therefore, after the recess 105 and the opening 124 are formed sequentially, the first semiconductor layer 102 forms a second surface 102d opposite to the first surface 102a at the bottom connected to the recess 105, the electrode 110 is connected to the second surface 102d and formed in the recess 105 corresponding to the opening 124, the electrode 110 has a width W₃Greater than W₂. The upper surface 110a of the electrode 110 has a contact region 110b connected to the second surface 102d of the first semiconductor layer 102, and the upper surface 110a of the electrode 110 further has an exposed region 110c exposed by the opening 124. The thickness of the first semiconductor layer 102 may be 3-4 μm, and is divided into a first portion 102b and a second portion 102 c. The thickness of the first portion 102b is about 1.5 to 3 μm corresponding to the depth of the opening 124, and the thickness of the second portion 102c is about 1 to 1.5 μm corresponding to the recess 105. The electrode 110 may be electrically connected to the first semiconductor layer 102 but not formed on the first surface 102a, and thus, does not block light of the light emitting device 100.

Through the above manufacturing process, the light emitting device 100 of the present embodiment may include: a conductive substrate 122; a bonding structure 120 formed on the conductive substrate 122; a reflective layer 118 formed on the bonding structure; a conductive structure 117 comprising a barrier layer 116 formed on a portion of the reflective layer 118 and a conductive layer 112 covered by the barrier layer 116; a light-emitting stack 108 comprising a first semiconductor layer 102, a light-emitting layer 104, and a second semiconductor layer 106 electrically connected to the conductive layer 112; an insulating structure 114 formed on a portion of the reflective layer 118 and penetrating the second semiconductor layer 106, the light-emitting layer 104 and the second portion 102c of the first semiconductor layer 102; an electrode 110 covered in the insulating structure 124 and connected to the first semiconductor layer 102 with an upper surface 110 a; and an opening 124 penetrates the first portion 102b of the first semiconductor layer 102. The insulating structure 114 can insulate the electrode 110 from the second semiconductor layer 106 and the light-emitting layer 104, the electrode 110 and the light-emitting layer 104 are located in different regions of the light-emitting device 100 in the horizontal direction, and the light-emitting layer 104 is entirely located above the conductive structure 117, so that light emitted by the light-emitting layer 104 is not shielded by the electrode 110 and the conductive structure 117 of the light-emitting device 100. The upper surface 110a of the electrode 110 can be connected to an external power source by wire bonding.

Fig. 2 is a schematic diagram of a light-emitting device according to a second embodiment of the invention. The present embodiment is substantially the same as the first embodiment, except that a wire electrode 211 may be further formed on the electrode 210 of the present embodiment in the opening 204 for disposing solder balls (not shown) for wire bonding operation.

Fig. 3 is a schematic diagram of a light-emitting device according to a third embodiment of the invention. The present embodiment is substantially the same as the previous embodiments, except that the conductive layer 308 electrically connected to the second semiconductor layer 306 is a non-reflective transparent conductive layer including Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and aluminum-doped zinc oxide (AZO), and there is no barrier layer in the first embodiment, the insulating structure 314 includes an insulating layer 314a formed between the light emitting stack 310 and the reflective layer 318, and an insulating portion 314b covering the electrode 311, and a plurality of conductive channels 316 penetrate through the insulating layer 314a and have two ends respectively connected to the conductive layer 308 and the reflective layer 318, and there may be a bonding structure 320 and a conductive substrate 322 under the reflective layer 318, which are the same as those in the first embodiment. The conductive via 316 may be a metal with good hole-filling capability, such as titanium (Ti), aluminum (Al), nickel (Ni), chromium (Cr), and copper (Cu). The insulating structure 314 may be a transparent insulating material, and may be formed by coating a single layer of silicon dioxide (SiO) by evaporation, sputtering, or spin-on-glass (SOG)₂) Or a single layer of titanium dioxide (TiO)₂) Or a single layer of silicon nitride (Si)₃N₄) And then cured, or a Bragg reflector (DBR) layer can be formed by repeatedly overlapping two or more layers with different refractive indexes.

Referring to fig. 4, which shows the electrode configuration of the light emitting device according to the first embodiment of the present invention, the electrode design of the present embodiment can also be applied to the second and third embodiments, and in order to clearly show the electrode patterns, the present embodiment only shows the patterns of the electrode 110 and the conductive structure 117. The conductive substrate 122 of the light-emitting device 100 may have a rectangular shape from a top view, and the size of the conductive substrate may be between 1mil and 70 mils. The electrode 110 of the present embodiment includes a wire bonding electrode 115 and an extension electrode 111 extending from the wire bonding electrode 115, the wire bonding electrode 115 is located at a corner of the light emitting device 100 near the rectangle, and the extension electrode 111 includes a first extension electrode 111b formed along the periphery of the light emitting device 100 and a second extension electrode 111a surrounded by the first extension electrode 111b and connected to the first extension electrode 111b, and the first extension electrode 111b and the second extension electrode 111a form another rectangle. The wire bonding electrode 115 and/or the extension electrode 111 and the conductive structure 117 are formed on different areas of the conductive substrate 122 without overlapping each other, so that the conductive structure 117 can be substantially complementary to the pattern formed by the wire bonding electrode 115 and the extension electrode 111 as shown by the diagonal line area in the figure.

Referring to fig. 5, which shows an electrode configuration of a light emitting device according to a fourth embodiment of the present invention, the electrode design of the present embodiment can be applied to the first to third embodiments, and in order to clearly show the electrode patterns, the present embodiment only shows the patterns related to the electrodes and the conductive structures in the foregoing embodiments. The outline of the conductive substrate 522 of the light emitting device 500 from the top view may be a rectangle, the electrodes of the embodiment include a wire bonding electrode 510 and an extension electrode 511 extending from the wire bonding electrode 510, the wire bonding electrode 510 is substantially located at the geometric center of the rectangle of the light emitting device 500, and the extension electrode 511 has a plurality of radiating branches extending from the wire bonding electrode 510. The routing electrode 510 and/or the extension electrode 511 and the conductive structure 517 are formed on different regions of the conductive substrate 522 without overlapping each other, so that the conductive structure 517 can be substantially complementary to the pattern formed by the routing electrode 510 and the extension electrode 511, as shown by the hatched region in the figure.

Referring to fig. 6, an electrode configuration of a light emitting device according to a fifth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 622 of the light emitting device 600 may be rectangular from the top view, the electrode of the embodiment includes a wire bonding electrode 610 and an extension electrode 611 extending from the wire bonding electrode 610, the wire bonding electrode 610 is substantially located at the geometric center of the rectangle of the light emitting device 600, and the extension electrode 611 has a plurality of radiating branches extending from the wire bonding electrode 610. In this embodiment, compared to the fifth embodiment, a larger number of radiation branches are added, and the lengths of the radiation branches may be different according to the extending direction, for example, the radiation branch of the extending electrode 611 extending to the opposite corners of the rectangle of the light emitting device 600 may have a longer length than the radiation branch extending to the side. The routing electrode 610 and/or the extension electrode 611 and the conductive structure 617 are formed on different regions of the conductive substrate 622 without overlapping each other, so that the conductive structure 617 can be substantially complementary to the pattern formed by the routing electrode 610 and the extension electrode 611, as shown by the hatched region in the figure.

Referring to fig. 7, an electrode configuration of a light emitting device according to a sixth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 722 of the light emitting device 700 may be rectangular when viewed from the top, the electrodes of this embodiment include a wire bonding electrode 710 and an extension electrode 711 extending from the wire bonding electrode 710, the wire bonding electrode 710 is located at a corner of the rectangle of the light emitting device 700, and the extension electrode 711 has a plurality of radiating branches extending from the wire bonding electrode 710, and the extension lengths of the radiating branches may be different according to the extension angles. Wire bond electrode 710 and/or extension electrode 711 and conductive structure 717 are formed on different areas of conductive substrate 722 without overlapping each other, so that conductive structure 717 can be substantially complementary to the pattern formed by wire bond electrode 710 and extension electrode 711, as shown by the diagonal lines in the figure.

Referring to fig. 8, an electrode configuration of a light emitting device according to a seventh embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 822 of the light emitting device 800 can be rectangular when viewed from the top, and the structure of the electrode of this embodiment includes

wire bonding electrodes

810a and 810b located near one side of the rectangle of the light emitting device 800; the extension electrode 811 includes radiating

branches

811a and 811b extending from the wire-bonded

electrodes

810a and 810b to the other side of the rectangle, respectively, a radiating branch 811c having two ends connected to the wire-bonded electrodes 810a and 810, respectively, and being parallel to the sides of the rectangle, and a radiating branch 811d extending from the connecting electrode 811c and being parallel to the radiating

branches

811a and 811 b. Wire bond electrode 810 and/or extension electrode 811 and conductive structure 817 are formed on different areas of conductive substrate 822 and do not overlap each other, so that conductive structure 817 can be substantially complementary to the pattern formed by wire bond electrode 810 and extension electrode 811, as shown by the hatched areas in the figure.

Referring to fig. 9, an electrode configuration of a light emitting device according to an eighth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 922 of the light emitting device 900 can be rectangular when viewed from the top, and the electrodes of the present embodiment include

bonding electrodes

910a and 910b located near one side of the rectangle of the light emitting device 900; and the extension electrode 911 includes

radiation branches

911a and 911b extending from the

bonding electrodes

910a and 910b to the other side of the rectangle, respectively. The present embodiment is substantially the same as the eighth embodiment, except that the

radiation branches

911a and 911b are zigzag and extend from the

routing electrodes

910a and 910b, and the

routing electrodes

910a and 910b extend to form a plurality of

radiation branches

911a and 911b, respectively. The routing electrode 910 and/or the extension electrode 911 and the conductive structure 917 are formed on different regions of the conductive substrate 922 and do not overlap with each other, so that the conductive structure 917 can be substantially complementary to the pattern formed by the routing electrode 910 and the extension electrode 911 as shown by the diagonal line region in the figure.

Referring to fig. 10, an electrode configuration of a light emitting device according to a ninth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 1022 of the light-emitting device 1000 can be rectangular when viewed from the top, and the electrodes of the present embodiment include

routing electrodes

1010a and 1010b located near two corners of one side of the rectangle of the conductive substrate 1022; the extension electrode 1011 includes a first radiation branch 1011a disposed along the rectangle of the conductive substrate 1022 and connected to the wire-bonded

electrodes

1010a and 1010b, and a second radiation branch 1011b connected between two opposite sides of the rectangle of the first radiation branch 1011a, and the first radiation branch 1011a and the second radiation branch 1011b form a grid pattern. The wire bonding electrode 1010 and/or the extension electrode 1011 and the conductive structure 1017 are formed on different areas of the conductive substrate 1022, and do not overlap with each other, so that the conductive structure 1017 can be substantially complementary to the pattern formed by the wire bonding electrode 1010 and the extension electrode 1011, as shown by the hatched area in the figure.

Although the invention has been described with reference to particular embodiments, it is not intended to limit the scope, sequence, or use of materials or process steps to the particular embodiments described. Various modifications and alterations of this invention can be made without departing from the spirit and scope of this invention.

Claims

1. A light emitting device, comprising:

a substrate;

a light emitting stack including a first semiconductor layer, a second semiconductor layer, and a light emitting layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer has a first surface, a first portion connected to the first surface, and a second portion connected to the first portion;

a conductive structure connected to the second semiconductor layer and arranged between the substrate and the second semiconductor layer

An opening penetrating the first portion of the first semiconductor layer from the first surface;

a recess penetrating through the second semiconductor layer, the light emitting layer and the second portion of the first semiconductor layer and connected to the opening, wherein the recess has a width greater than that of the opening, such that a bottom of the recess is exposed to a second surface of the first semiconductor layer, the second surface being opposite to the first surface;

an electrode located in the recess and corresponding to the opening; and

a routing electrode which is positioned in the opening and is connected with the electrode;

in a top view, the wire bonding electrode and the conductive structure are not overlapped with each other.

2. The light-emitting device according to claim 1, comprising an insulating structure covering the electrode.

3. The light-emitting device according to claim 1, wherein the electrode has a width greater than the width of the opening and is connected to the second surface.

4. The light emitting device of claim 1, wherein the conductive structure comprises a conductive layer electrically connected to the second semiconductor layer and a barrier layer encapsulating and electrically connected to the second semiconductor layer.

5. The light-emitting device according to claim 3, wherein the insulating structure separates the electrode, the light-emitting layer, and the second semiconductor layer.

6. The light-emitting device of claim 1, further comprising a bonding structure and a conductive substrate, wherein the insulating structure has a third surface, the barrier layer has a fourth surface, and the third surface of the insulating structure is substantially coplanar with the fourth surface of the barrier layer, wherein the bonding structure is between the third surface, the fourth surface, and the conductive substrate.

7. The light-emitting device according to claim 1, wherein the first surface of the light-emitting stack is a roughened structure.

8. The light-emitting device of claim 1, further comprising a metal reflective layer formed under the conductive structure and the insulating structure, a conductive connection layer formed under the metal reflective layer, and a conductive substrate formed under the conductive connection layer.

9. The light emitting device of claim 2, wherein the insulating structure is further formed below the second semiconductor layer, and the conductive structure comprises a plurality of conductive vias penetrating the insulating layer below the second semiconductor layer.

10. The light-emitting device according to claim 1, wherein the first surface of the first semiconductor layer does not include a structure for shielding light emitted from the light-emitting layer.