CN109633997A - Substrate and display panel - Google Patents
Substrate and display panel Download PDFInfo
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- CN109633997A CN109633997A CN201811572097.8A CN201811572097A CN109633997A CN 109633997 A CN109633997 A CN 109633997A CN 201811572097 A CN201811572097 A CN 201811572097A CN 109633997 A CN109633997 A CN 109633997A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- Nonlinear Science (AREA)
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- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application provides a kind of substrate and display panel, the substrate, comprising: community electrode layer；One gate insulating layer is set on the common electrode layer；One passivation layer is set on the gate insulating layer, etches the passivation layer, is formed a recess, is exposed the part gate insulating layer；And a pixel electrode layer, it is set on the passivation layer；Wherein the common electrode layer is that left and right is connected, and disconnects be not attached to design up and down；The common electrode layer is non-close segment design；The pixel electrode layer is that part is Chong Die with the common electrode layer.
Description
Technical field
This application involves display fields, more particularly to a kind of substrate and display panel.
Background technique
Liquid crystal display shows image using the electrical properties and optical property of liquid crystal.Liquid crystal has anisotropy, example
Such as, refractive index and dielectric constant have differences between the main shaft of molecule and secondary axes.The molecules align of liquid crystal is with optical property
It can adjust easily.Liquid crystal display is penetrated partially by according to the orientation of the magnitude of electric field change liquid crystal molecule with adjusting
The transmittance of the light of tabula rasa, to show image.
Liquid crystal display panel is usually by a color membrane substrates (Color Filter, CF), a thin-film transistor array base-plate
(Thin Film Transistor Array Substrate, TFT Array Substrate) and one it is configured at two substrates
Between liquid crystal layer (Liquid Crystal Layer) constituted, its working principle is that pass through on two panels glass substrate apply drive
Dynamic voltage controls the rotation of the liquid crystal molecule of liquid crystal layer, the light refraction of backlight module is come out generates picture.According to liquid crystal
Aligned difference, the liquid crystal display panel on mainstream market can be divided into following several types: vertical orientation at present
(Vertical Alignment, VA) type, twisted-nematic (Twisted Nematic, TN) or super twisted nematic (Super
Twisted Nematic, STN) type, plane conversion (In-Plane Switching, IPS) type and fringe field switching (Fringe
Field Switching, FFS) type.
The liquid crystal display of vertical orientation type (Vertical Alignment, the VA) mode, such as figure vertical orientation
Type (patterned vertical alignment, PVA) liquid crystal display or multiregional vertical align type (Multi-domain
Vertical Alignment, MVA) liquid crystal display device, wherein PVA type reaches wide viewing angle using fringing field effect and compensating plate
Effect.One picture element is divided into multiple regions by MVA type, and uses bump (Protrusion) or specific pattern structure, is made
Liquid crystal molecule positioned at different zones is toppled in the same direction towards different, to have the function that wide viewing angle and promote penetrance.
And the design developed recently of panel display is towards high picture value, the product face of high-res, wherein each panel factory
All there is its new design to can be applicable on high standard product, in the panel market of VA series, using the design on use picture element difference farmland,
Improve visual angle, but core technology all reaches best optics display effect as target so that how to effectively control lqiuid crystal molecule tippings.
Under liquid crystal molecule is driven by extra electric field, optical phase difference can produce, wherein if Liquid Crystal Molecules Alignment is uneven, phase
Potential difference difference leads to dark line under optics.There are many signals in display picture element, comprising scan line signal, data line signal, are total to
Electrode signal etc., the field distribution of each signal generation may all cause liquid crystal molecule to arrange, topple over exception, and when different farmlands are interrogated
When number difference, it is bad and form dark line to be easy the lqiuid crystal molecule tipping between different farmlands, in addition, because there are multilayer knots in picture element
Structure, each tunic thickness is all variant, then there are different terrain differences in height, this terrain differences can also arrange liquid crystal molecule for picture element itself
Column distribution makes a difference, and influences picture element and normally shows, generates bad display.
Common improvement mode is as increased flatness layer structure, so that liquid crystal molecule is not easily susceptible to hypsography and generates and do not advise
Then dark line, in addition, Different electrodes, which can also be used, is designed so that liquid crystal molecule effectively arranges, the structure as disclosed by the application is set
Meter can be effectively improved dark line, improve picture element penetration.
Summary of the invention
In order to solve the above-mentioned technical problem, the purpose of the application is, provides a kind of substrate, comprising: community electrode layer；
One gate insulating layer is set on the common electrode layer；One passivation layer is set on the gate insulating layer, described in etching
Passivation layer forms a recess, exposes the part gate insulating layer；And a pixel electrode layer, it is set to the passivation layer
On；Wherein the common electrode layer is that left and right is connected, and disconnects be not attached to design up and down.
The another object of the application is a kind of substrate, comprising: community electrode layer；One gate insulating layer is set to described
On common electrode layer；One passivation layer is set on the gate insulating layer, etches the passivation layer, is formed a recess, is exposed
The part gate insulating layer；And a pixel electrode layer, it is set on the passivation layer；Wherein the common electrode layer is a left side
The right side is connected, and disconnects be not attached to design up and down；The common electrode layer is non-close segment design；The pixel electrode layer with it is described
Common electrode layer is that part is overlapped.
The further object of the application is a kind of display panel, comprising: a substrate, comprising: community electrode layer is set to institute
It states on substrate；One gate insulating layer is set on the common electrode layer；One passivation layer is set on the gate insulating layer,
The passivation layer is etched, a recess is formed, exposes the part gate insulating layer；And a pixel electrode layer, it is set to institute
It states on passivation layer；One opposite substrate is arranged oppositely with the substrate；And a liquid crystal layer, it is set to the substrate and described
Between opposite substrate, and fill up the crystal gap space；Wherein the pixel electrode layer and the common electrode layer are part
Overlapping.
It the purpose of the application and solves its technical problem and adopts the following technical solutions to realize.
In the embodiment of the application, the pixel electrode layer is indium tin oxide.
In the embodiment of the application, the pixel electrode layer is that part is Chong Die with the common electrode layer.
In the embodiment of the application, the passivation layer film thickness is 2000 angstroms -2500 angstroms.
In the embodiment of the application, the gate insulating layer film thickness is 3000 angstroms -5000 angstroms.
In the embodiment of the application, the common electrode layer film thickness is 3400 angstroms -5400 angstroms.
In the embodiment of the application, the common electrode layer is that left and right is connected, and disconnects be not attached to design up and down.
In the embodiment of the application, the common electrode layer is non-close segment design.
The application improves Liquid Crystal Molecules Alignment, improves picture element dark line and is formed.
Detailed description of the invention
Fig. 1 a is exemplary image element structure schematic diagram.
Fig. 1 b is the exemplary image element structure schematic diagram with dark line.
Fig. 2 a is the image element structure schematic diagram of one embodiment of the application.
Fig. 2 b is the image element structure schematic diagram without dark line of one embodiment of the application.
Fig. 3 a is the image element structure schematic diagram of another embodiment of the application.
Fig. 3 b is the common electrode layer design diagram of one embodiment of the application.
Fig. 3 c is the image element structure diagrammatic cross-section on the display panel of another embodiment of the application.
Fig. 4 a is the image element structure schematic diagram of the another embodiment of the application.
Fig. 4 b is the image element structure diagrammatic cross-section on the display panel of the another embodiment of the application.
Fig. 5 a is the image element structure schematic diagram of the application another embodiment.
Fig. 5 b is the image element structure diagrammatic cross-section on the display panel of the application another embodiment.
Fig. 6 is the manufacturing method flow chart of the display panel of one embodiment of the application.
Specific embodiment
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the application with reference to additional schema
Example.The direction term that the application is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.
Attached drawing and explanation are considered inherently illustrative, rather than restrictive.The similar list of structure in the figure
Member is to be given the same reference numerals.In addition, in order to understand and be convenient for description, the size and thickness of each component shown in the accompanying drawings are
It is arbitrarily shown, but the application is without being limited thereto.
In the accompanying drawings, for clarity, the thickness in layer, film, panel, region etc. is exaggerated.In the accompanying drawings, in order to understand
With convenient for description, the thickness of some layer and region is exaggerated.It will be appreciated that ought such as layer, film, region or substrate component quilt
Referred to as " " another component "upper" when, the component can be directly on another component, or there may also be middle groups
Part.
In addition, in the description, unless explicitly described as opposite, otherwise word " comprising " will be understood as meaning to wrap
The component is included, but is not excluded for any other component.In addition, in the description, " above " means to be located at target group
Part either above or below, and be not intended to must be positioned on the top based on gravity direction.
Further to illustrate that the application is the technical means and efficacy reaching predetermined goal of the invention and being taken, below in conjunction with
Attached drawing and specific embodiment, to a kind of substrate and display panel proposed according to the application, specific embodiment, structure,
Feature and its effect, detailed description is as follows.
Fig. 1 a is exemplary image element structure schematic diagram and Fig. 1 b is the exemplary image element structure schematic diagram with dark line.
Please refer to Fig. 1 a and Fig. 1 b, a kind of image element structure 10, including community electrode layer 110, a pixel electrode layer (transparent indium tin oxygen
Compound) 100 and a metal layer 120；Wherein the Terrain Elevation difference difference of the common electrode layer 110 thus causes liquid crystal to topple over
Generate a dark line region 112.
Fig. 2 a is the image element structure schematic diagram of one embodiment of the application and Fig. 2 b is that not having for one embodiment of the application is dark
The image element structure schematic diagram of line.Fig. 2 a and Fig. 2 b is please referred to, in the embodiment of the application, a kind of image element structure 20, including
Community electrode layer 210, a pixel electrode layer (transparent indium tin oxide) 200 and a metal layer 220；The wherein common electricity
Pole layer 210 using left and right be connected, up and down disconnect be not attached to design thus improve lqiuid crystal molecule tipping situation, reduce dark line；
The pixel electrode layer 200 uses closure designs, and dark line flash is avoided to occur；200 edge of pixel electrode layer on different farmlands
It can be Chong Die with 210 part of the common electrode layer or be overlapped, in addition to increasing storage capacitors, liquid crystal molecule can also be made by electric field shadow
Sound is orderly toppled over, and can be effectively improved the formation of dark line under optical analog performance.
The common electrode that Fig. 3 a is the image element structure schematic diagram of another embodiment of the application, Fig. 3 b is one embodiment of the application
Layer design diagram and Fig. 3 c are the image element structure diagrammatic cross-section on the display panel of another embodiment of the application.Please refer to figure
3a, Fig. 3 b and Fig. 3 c, in the embodiment of the application, a kind of display panel 30 a, comprising: substrate 35, comprising: a common electricity
Pole layer 310；One gate insulating layer 312 is set on the common electrode layer 310；One passivation layer 314, is set to the grid
On insulating layer 312, the passivation layer 314 is etched, a recess 320 is formed, exposes the part gate insulating layer 312；And
One pixel electrode layer 300 is set on the passivation layer 314；One opposite substrate (not shown) is set with 35 opposite direction of substrate
It sets；And a liquid crystal layer (not shown), it is set between the substrate 35 and the opposite substrate, and fill up the crystal gap
Space；Wherein the common electrode layer 310 is that left and right is connected, and disconnects be not attached to design up and down；The common electrode layer 310 is non-
Close segment design；And liquid crystal molecule, on this boundary, because Terrain Elevation is different, 300 border-differential of pixel electrode layer, liquid crystal divides
Son arrangement with to topple over speed variant, on different farmland boundaries, the speed ratio that liquid crystal is toppled over is very fast, and because exists on boundary total
It is designed with electrode layer 310, liquid crystal molecule is toppled over along with common electrode electric field to 300 direction of pixel electrode layer, and arrangement is not easy in disorder
And dark line is generated, and there are common electrode openings between pixel electrode layer 300 and storage capacitors, it can effectively guide liquid crystal molecule court
Common-battery extreme direction is toppled over, and dark line is not likely to produce.
In the embodiment of the application, a kind of substrate 35, comprising: community electrode layer 310；One gate insulating layer 312,
It is set on the common electrode layer 310；One passivation layer 314 is set on the gate insulating layer 312, etches the passivation
Layer 314 forms a recess 320, exposes the part gate insulating layer 312；And a pixel electrode layer 300, it is set to institute
It states on passivation layer 314；Wherein the common electrode layer 310 is that left and right is connected, and disconnects be not attached to design up and down；The common electrode
Layer 310 is non-close segment design.
In the embodiment of the application, the pixel electrode layer 300 is indium tin oxide.
In the embodiment of the application, 300 film thickness of pixel electrode layer is 400 angstroms -600 angstroms, is chosen as 500 angstroms.
In the embodiment of the application, 314 film thickness of passivation layer is 2000 angstroms -2500 angstroms, is chosen as 2300 angstroms.
In the embodiment of the application, 312 film thickness of gate insulating layer is 3000 angstroms -5000 angstroms, is chosen as 4000
Angstrom.
In the embodiment of the application, 310 film thickness of common electrode layer is 3400 angstroms -5400 angstroms, is chosen as 4400
Angstrom.
Fig. 4 a be the another embodiment of the application image element structure schematic diagram and Fig. 4 b be the another embodiment of the application display
Image element structure diagrammatic cross-section on panel.Please refer to Fig. 4 a and Fig. 4 b, a kind of display panel 40, comprising: a substrate 45, packet
It includes: community electrode layer 410；One gate insulating layer 412 is set on the common electrode layer 410；One passivation layer, 414 settings
In on the gate insulating layer 412, etching the passivation layer 414, a recess 420 is formed, the part gate insulator is exposed
Layer 412；And a pixel electrode layer 416, it is set on the passivation layer 414；One opposite substrate (not shown), with the base
Plate 45 is arranged oppositely；And a liquid crystal layer (not shown), it is set between the substrate 45 and the opposite substrate, and fill up institute
State crystal gap space；Wherein the common electrode layer 410 is that left and right is connected, and disconnects be not attached to design up and down；The common electricity
Pole layer 410 is non-close segment design；The common electrode layer 410 is designed using non-close, so that the liquid crystal molecule at farmland edge
It is not easily susceptible to common electrode closing up and down and topples over exception, generate black dark line whirlpool.
In the embodiment of the application, a kind of substrate 45, comprising: community electrode layer 410；One gate insulating layer 412,
It is set on the common electrode layer 410；One passivation layer, 414 are set on the gate insulating layer 412, etch the passivation
Layer 414 forms a recess 420, exposes the part gate insulating layer 412；And a pixel electrode layer 416, it is set to institute
It states on passivation layer 414；Wherein the common electrode layer 410 is that left and right is connected, and disconnects be not attached to design up and down；The common electrode
Layer 410 is non-close segment design.
In the embodiment of the application, the pixel electrode layer 416 is indium tin oxide.
In the embodiment of the application, 416 film thickness of pixel electrode layer is 400 angstroms -600 angstroms, is chosen as 500 angstroms.
In the embodiment of the application, 414 film thickness of passivation layer is 2000 angstroms -2500 angstroms, is chosen as 2300 angstroms.
In the embodiment of the application, 412 film thickness of gate insulating layer is 3000 angstroms -5000 angstroms, is chosen as 4000
Angstrom.
In the embodiment of the application, 410 film thickness of common electrode layer is 3400 angstroms -5400 angstroms, is chosen as 4400
Angstrom.
Fig. 5 a be the application another embodiment image element structure schematic diagram and Fig. 5 b be the application another embodiment display
Image element structure diagrammatic cross-section on panel.Please refer to Fig. 5 a and Fig. 5 b, a kind of display panel 50, comprising: a substrate 55, packet
It includes: community electrode layer 510；One gate insulating layer 512 is set on the common electrode layer 510；One passivation layer 514, setting
In on the gate insulating layer 514, etching the passivation layer 514, a recess 520 is formed, the part gate insulator is exposed
Layer 512；And a pixel electrode layer 516, it is set on the passivation layer 514；One opposite substrate (not shown), with the base
Plate 55 is arranged oppositely；And a liquid crystal layer (not shown), it is set between the substrate 55 and the opposite substrate, and fill up institute
State crystal gap space；Wherein the common electrode layer 510 is that left and right is connected, and disconnects be not attached to design up and down；The common electricity
Pole layer 510 is non-close segment design；The pixel electrode layer 516 is that part is Chong Die with the common electrode layer 510；Different farmlands
Pixel electrode layer 516 and the common electrode layer 510 it is partly be overlapped, increase landform flatness, avoid liquid crystal molecule by ground
Shape and topple over bad.
In the embodiment of the application, a kind of substrate 55, comprising: community electrode layer 510；One gate insulating layer 512,
It is set on the common electrode layer 510；One passivation layer 514 is set on the gate insulating layer 514, etches the passivation
Layer 514 forms a recess 520, exposes the part gate insulating layer 512；And a pixel electrode layer 516, it is set to institute
It states on passivation layer 514；Wherein the common electrode layer 510 is that left and right is connected, and disconnects be not attached to design up and down；The common electrode
Layer 510 is non-close segment design；The pixel electrode layer 516 is that part is Chong Die with the common electrode layer 510.
In the embodiment of the application, the pixel electrode layer 516 is indium tin oxide.
In the embodiment of the application, 516 film thickness of pixel electrode layer is 400 angstroms -600 angstroms, is chosen as 500 angstroms.
In the embodiment of the application, 514 film thickness of passivation layer is 2000 angstroms -2500 angstroms, is chosen as 2300 angstroms.
In the embodiment of the application, 512 film thickness of gate insulating layer is 3000 angstroms -5000 angstroms, is chosen as 4000
Angstrom.
In the embodiment of the application, 510 film thickness of common electrode layer is 3400 angstroms -5400 angstroms, is chosen as 4400
Angstrom.
Fig. 5 b is please referred to, in the embodiment of the application, a kind of manufacturing method of display panel 50, comprising: provide one
Substrate 55；Community electrode layer 510 is formed on the substrate 55；A gate insulating layer 512 is formed in the common electrode layer
On 510；A passivation layer 514 is formed on the gate insulating layer 512, etching the passivation layer 514, forms a recess 520, and
Expose the part gate insulating layer 512；And a pixel electrode layer 516 is formed on the passivation layer 514；It is wherein described
Common electrode layer 510 is that left and right is connected, and disconnects be not attached to design up and down；The common electrode layer 510 is non-close segment design；
The pixel electrode layer 516 is that part is Chong Die with the common electrode layer 510.
In the embodiment of the application, the manufacturing method, 516 film thickness of pixel electrode layer is 400 angstroms -600 angstroms,
It is chosen as 500 angstroms.
In the embodiment of the application, the manufacturing method, 510 film thickness of common electrode layer is 3400 angstrom -5400
Angstrom, it is chosen as 4400 angstroms.
Fig. 6 is the manufacturing method flow chart of the display panel of one embodiment of the application.Referring to FIG. 6, in process S611,
One substrate is provided.
Fig. 6 is please referred to, in process S612, forms community electrode layer on the substrate.
Fig. 6 is please referred to, in process S613, forms a gate insulating layer on the common electrode layer；
Fig. 6 is please referred to, in process S614, a passivation layer is formed on the gate insulating layer, etches the passivation layer,
A recess is formed, and exposes the part gate insulating layer.
Fig. 6 is please referred to, in process S615, forms a pixel electrode layer on the passivation layer.
Fig. 6 is please referred to, in process S616, the common electrode layer is that left and right is connected, and disconnects be not attached to design up and down.
Fig. 6 is please referred to, in process S617, the common electrode layer is non-close segment design.
Fig. 6 is please referred to, in process S618, the pixel electrode layer is that part is Chong Die with the common electrode layer.
In some embodiments of the application, display panel may include liquid crystal display (Liquid Crystal Display,
LCD) panel, wherein liquid crystal display (Liquid Crystal Display, LCD) panel includes: switch arrays (thin film
Transistor, TFT) substrate, liquid crystal chromatic filter layer (color filter, CF) substrate and be formed between two substrates
Layer, display panel or be Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) panel or quantum
Point luminescent diode (Quantum Dots Light-Emitting Diode, QLED) panel.
The application improves Liquid Crystal Molecules Alignment, improves picture element dark line and is formed.
" in some embodiments " and " in various embodiments " terms are used repeatedly etc..The term is not usually
Refer to identical embodiment；But it may also mean that identical embodiment.The words such as "comprising", " having " and " comprising " are synonymous
Word, unless its context meaning shows other meanings.
The above is only embodiments herein, not makes any form of restriction to the application, although the application
It is disclosed above with specific embodiment, however it is not limited to the application, any person skilled in the art, not
It is detached within the scope of technical scheme, when the technology contents using the disclosure above make a little change or are modified to equivalent change
The equivalent embodiment of change, but all contents without departing from technical scheme, the technical spirit according to the application is to the above reality
Any simple modification, equivalent change and modification made by example are applied, in the range of still falling within technical scheme.
Claims (10)
1. a kind of substrate characterized by comprising
Community electrode layer；
One gate insulating layer is set on the common electrode layer；
One passivation layer is set on the gate insulating layer, etches the passivation layer, is formed a recess, is exposed described in part
Gate insulating layer；And
One pixel electrode layer, is set on the passivation layer；Wherein the common electrode layer is that left and right is connected, and disconnects not phase up and down
It is connected with meter.
2. substrate as described in claim 1, which is characterized in that the pixel electrode layer is indium tin oxide.
3. substrate as described in claim 1, which is characterized in that the pixel electrode layer and the common electrode layer are heavy for part
It is folded.
4. substrate as described in claim 1, which is characterized in that the passivation layer film thickness is 2000 angstroms -2500 angstroms.
5. substrate as described in claim 1, which is characterized in that the gate insulating layer film thickness is 3000 angstroms -5000 angstroms.
6. substrate as described in claim 1, which is characterized in that the common electrode layer film thickness is 3400 angstroms -5400 angstroms.
7. a kind of substrate characterized by comprising
Community electrode layer is set on the substrate；
One gate insulating layer is set on the common electrode layer；
One passivation layer is set on the gate insulating layer, etches the passivation layer, is formed a recess, is exposed described in part
Gate insulating layer；And
One pixel electrode layer, is set on the passivation layer；Wherein the common electrode layer is that left and right is connected, and disconnects not phase up and down
It is connected with meter；The common electrode layer is non-close segment design；The pixel electrode layer and the common electrode layer are part weight
It is folded.
8.-kind of display panel characterized by comprising
One substrate, comprising:
Community electrode layer is set on the substrate；
One gate insulating layer is set on the common electrode layer；
One passivation layer is set on the gate insulating layer, etches the passivation layer, is formed a recess, is exposed described in part
Gate insulating layer；And
One pixel electrode layer, is set on the passivation layer；
One opposite substrate is arranged oppositely with the substrate；And
One liquid crystal layer is set between the substrate and the opposite substrate, and fills up the crystal gap space；It is wherein described
Pixel electrode layer is that part is Chong Die with the common electrode layer.
9. display panel as claimed in claim 8, which is characterized in that the common electrode layer is that left and right is connected, and is disconnected up and down
It is not attached to design.
10. display panel as claimed in claim 8, which is characterized in that the common electrode layer is non-close segment design.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811572097.8A CN109633997A (en) | 2018-12-21 | 2018-12-21 | Substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811572097.8A CN109633997A (en) | 2018-12-21 | 2018-12-21 | Substrate and display panel |
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| CN109633997A true CN109633997A (en) | 2019-04-16 |
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| JP2002341379A (en) * | 2001-05-17 | 2002-11-27 | Matsushita Electric Ind Co Ltd | Liquid crystal display device and its manufacturing method |
| CN1888962A (en) * | 2005-06-29 | 2007-01-03 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and method of manufacturing the same |
| EP1857858A1 (en) * | 2006-05-18 | 2007-11-21 | Samsung Electronics Co., Ltd. | Display panel |
| CN102654693A (en) * | 2011-03-02 | 2012-09-05 | 奇美电子股份有限公司 | Liquid crystal display |
| CN104122715A (en) * | 2013-07-19 | 2014-10-29 | 深超光电（深圳）有限公司 | Thin film transistor substrate and LCD panel |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190416 |
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| RJ01 | Rejection of invention patent application after publication |