CN109616404A - The surface treatment method of Shooting Technique is carried out for device wafers - Google Patents
The surface treatment method of Shooting Technique is carried out for device wafers Download PDFInfo
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- CN109616404A CN109616404A CN201811604319.XA CN201811604319A CN109616404A CN 109616404 A CN109616404 A CN 109616404A CN 201811604319 A CN201811604319 A CN 201811604319A CN 109616404 A CN109616404 A CN 109616404A
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- Prior art keywords
- crystal column
- shooting technique
- treatment method
- column surface
- carrying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Abstract
A kind of surface treatment method carrying out Shooting Technique for device wafers, comprising: step 1: plasma cleaning process is carried out to the surface of the wafer；Step 2: surface reduction processing is carried out to the surface of the wafer；Step 3: carrying out Shooting Technique in the crystal column surface；After crystal column surface carries out plasma cleaning process, poor flatness after crystal column surface is impacted by plasma, by carrying out surface reduction processing to crystal column surface, the generation chemical modification for making crystal column surface, removes the oxide layer of crystal column surface, provides the flatness of crystal column surface, to be conducive to injection molding material in the hot-forming of crystal column surface, increase the binding force between crystal column surface and injection molding material, improves the reliability of product, keep injection molding process effect more controllable.
Description
Technical field
The present invention relates to technical field of semiconductors, carry out Shooting Technique for device wafers more particularly, to a kind of
Surface treatment method.
Background technique
Being fanned out to formula encapsulation is that the intact chip of performance is embedded in injected molded polymeric material or matrix, passes through re-wiring layer
Equal metals connection type realizes the connection with other devices.The formula packaging technology of being fanned out to effectively reduces the thickness and size of encapsulation,
It can be compatible with the encapsulation of various chips, cost is lower, and device performance is higher, becomes the hot spot of present packaging technology.Injection molding
Technique is the committed step being fanned out in formula encapsulation, and process performance parameters have great influence, existing note to formula product is fanned out to
It is moulded into type packaging technology, crystal column surface directly carries out injection molding process after plasma cleaning, due to wafer after cleaning
Surface is impacted by plasma and forms the out-of-flatness surface with protrusion and recess, and wafer after to surface treatment is molded
When technique, injected molded polymeric material softens melting at high temperature and is filled in crystal column surface, but due to its viscosity and mobility,
The recess of crystal column surface cannot be sufficient filling with, so crystal column surface is not usually, injection molded layers cannot paste completely with crystal column surface
It closes, is unfavorable for the hot-forming of injection molding material, cause injection molding process effect to be deteriorated, or even not can be carried out injection molding process.
Therefore, it is necessary to provide a kind of surface treatment method for carrying out Shooting Technique for device wafers, wafer table is improved
Flatness, increase the binding force between crystal column surface and injection molding material.
Summary of the invention
The purpose of the present invention is the flatness of crystal column surface after raising cleaning, improve the hot-forming of crystal column surface injection molding material
Effect provides a kind of surface treatment method that Shooting Technique is carried out for device wafers.
To achieve the goals above, a surface treatment method that Shooting Technique is carried out for device wafers is proposed, including such as
Lower step:
Step 1: plasma cleaning process is carried out to the surface of the wafer；
Step 2: surface reduction processing is carried out to the surface of the wafer；
Step 3: carrying out Shooting Technique in the crystal column surface.
Optionally, the surface reduction processing includes: that reduction reaction gas is passed through into reaction chamber, to the crystal column surface
Oxide layer carry out reduction reaction.
Optionally, the reducing gas is H2、N2Or CH4。
Optionally, the temperature of the surface reduction is 200~500 DEG C.
Optionally, the plasma cleaning process includes: to excite inorganic gas for plasma state, to the crystal column surface
Carry out sputtering etching.
Optionally, the stimulating frequency of the inorganic gas is the plasma of 40KHZ.
Optionally, the inorganic gas is argon gas.
Optionally, the encapsulating material of the Shooting Technique is epoxy resin.
The beneficial effects of the present invention are: device wafers surface carry out plasma cleaning process after, crystal column surface by
Poor flatness after plasma impact carries out surface reduction processing to crystal column surface, makes crystal column surface that chemical modification occur, and removal is brilliant
The oxide layer of circular surfaces improves the flatness of crystal column surface, is conducive to injection molding material in the hot-forming of crystal column surface, increases wafer
Binding force between surface and injection molding material improves the reliability of product, keeps injection molding process effect more controllable.
The device of the invention has other characteristics and advantages, these characteristics and advantages from the attached drawing being incorporated herein and with
It will be apparent in specific embodiment afterwards, or will be in the attached drawing and subsequent specific embodiment being incorporated herein
Middle to be stated in detail, the drawings and the detailed description together serve to explain specific principles of the invention.
Detailed description of the invention
Exemplary embodiment of the present is described in more detail in conjunction with the accompanying drawings, of the invention is above-mentioned and other
Purpose, feature and advantage will be apparent, wherein in exemplary embodiments of the present invention, identical appended drawing reference is usual
Represent same parts.
The stream of Fig. 1 surface treatment method according to an embodiment of the invention that Shooting Technique is carried out for device wafers
Cheng Tu.
Specific embodiment
The present invention will be described in more detail below with reference to accompanying drawings.Although showing the preferred embodiment of the present invention in attached drawing,
However, it is to be appreciated that may be realized in various forms the present invention and should not be limited by the embodiments set forth herein.On the contrary, providing
These embodiments are of the invention more thorough and complete in order to make, and can will fully convey the scope of the invention to ability
The technical staff in domain.
As shown in Figure 1, providing a kind of surface treatment method for carrying out Shooting Technique for device wafers, including walk as follows
It is rapid:
Step 1: plasma cleaning process is carried out to the surface of wafer；
Optionally, plasma cleaning process includes: to excite inorganic gas for plasma state, to crystal column surface into
Row sputtering etching.
Plasma clean can remove the organic photoresist in chip manufacturing, the removal tree in integrated pretreating process
Rouge, remaining photosensitive resist, solution residue and other organic pollutants, are remarkably improved bonding wire bonding intensity, reduce circuit event
A possibility that barrier.Plasma cleaning technology solves in integrated circuit production and largely consumes pure water and chemicals, green ring
It protects.
Glow discharge is generated using alternating current by applying in DC voltage or radio-frequency region in inorganic gas, when applying
When power-up energy, the free electron in gas is accelerated, bumps against with atom or molecule, the electricity of attachment is released in collision process
Son, there are following substances: the electronics in high-speed motion state in plasmoid；The neutral atom that is active,
Molecule, atomic group (free radical)；Atom, the molecule of ionization；Unreacted molecule, atom etc., but substance is still protected on the whole
Electroneutral state is held, this is the prior art, and repeats no more herein.
In vacuum cavity, aura is played under certain pressure condition by radio-frequency power supply and generates the unordered etc. of high-energy
Gas ions are cleaned product surface by plasma bombardment, so that pollutant is detached from crystal column surface, are siphoned away using vacuum pump, with
Reach cleaning purpose, while keeping the pure property of chemistry of cleaned material, corrosiveness anisotropy.
The maximum feature of plasma cleaning technology is the type of substrate regardless of process object, can be handled, to gold
Category, semiconductor, oxide and most of high molecular materials, such as polypropylene, polyester, polyimides, polychlorostyrene ethane, epoxy, even
Polytetrafluoroethylene (PTFE) etc. can be handled well, and can realize the cleaning of entirety and part and labyrinth.
Optionally, the stimulating frequency of inorganic gas is the plasma of 40KHZ.
Specifically, the plasma that stimulating frequency is 40KHZ is ultrasonic plasma, after crystal column surface is impacted by plasma
Poor flatness, while poor selectivity is cleaned to the various different plant species of surface to be cleaned, it is therefore desirable to crystal column surface is gone back
Original reaction, takes out oxide on surface, improves the flatness of crystal column surface, increases the binding force of wafer and injection molding material.
Optionally, inorganic gas is argon gas.
Step 2: surface reduction processing is carried out to the surface of wafer.
Optionally, surface reduction processing includes: that reduction reaction gas is passed through into reaction chamber, to crystal column surface
Oxide layer carries out reduction reaction.
Optionally, reducing gas H2、N2Or CH4。
Optionally, the temperature of surface reduction is 200~500 DEG C.
Specifically, reaction temperature is heated to be 200~500 DEG C, and reducing gas is passed through into reaction chamber, and reducing gas is adsorbed
It in crystal column surface, is chemically reacted, generates reactant and by-product, siphoned away by vacuum pump, to wafer before injection molding
Surface carries out modified with reduction, is replaced the oxygen element in the oxide layer of crystal column surface, improves the flatness of crystal column surface, increases
Binding force between crystal column surface and injection molding material improves the reliability of product, increases service life.
As an example, the out-of-flatness surface with protrusion and recess, hydrogen are formed after crystal column surface is impacted by plasma
Pneumoelectric from can capture crystal column surface SiO later2In oxygen element, crystal column surface high spot contacts sufficiently with hydrogen ion, and reduction is anti-
The etch rate answered is very fast, contacts less in the recess of crystal column surface with hydrogen ion, the etch rate of reduction reaction is slower, passes through
After a period of time reacts, the oxygen element in the oxide layer of crystal column surface is replaced, and improves the flatness of crystal column surface, so that after
The injected plastics material with viscosity and mobility can be filled up completely in crystal column surface in continuous Shooting Technique, make injection molded layers and wafer table
Face can be bonded completely.
Step 3: carrying out Shooting Technique in crystal column surface.
It will be welded with the chip plastic packaging of bonding wire and frame by Shooting Technique, keep its free from the influence of the external environment and fail.
Specifically, when carrying out Shooting Technique to the wafer after surface treatment, in injection molding machine, after softening melting filling
Plastic packaging material inject and be full of membrane cavity, there is the plastic packaging material of viscosity to be sufficiently bonded with device wafers, by chip, bonding wire and frame encapsulate
Get up, the air in die cavity is discharged, increase the binding force on device wafers surface and injection molding material bracket, after plastic packaging material hardening, takes off
Mould takes out the finished product sealed, and improves the reliability of product, keeps injection molding process effect more controllable.
As an example, the encapsulating material of the Shooting Technique is epoxy resin.
Epoxy-plastic packaging material is a kind of thermosetting resin, and main component is epoxy resin and various additives (curing agent, modification
Agent, release agent, coloring agent, fire retardant etc.), it is that black is blocky, low temperature storage needs first to rise again before use.Its characteristic are as follows: in high temperature
Lower elder generation is in a molten state, and then its ingredient crosslinks reaction and gradually hardens, final molding.
Various embodiments of the present invention are described above, above description is exemplary, and non-exclusive, and
It is not limited to disclosed each embodiment.Without departing from the scope and spirit of illustrated each embodiment, for this skill
Many modifications and changes are obvious for the those of ordinary skill in art field.
Claims (8)
1. a kind of surface treatment method for carrying out Shooting Technique for device wafers characterized by comprising
Step 1: plasma cleaning process is carried out to the surface of the wafer；
Step 2: surface reduction processing is carried out to the surface of the wafer；
Step 3: carrying out Shooting Technique in the crystal column surface.
2. the surface treatment method according to claim 1 that Shooting Technique is carried out for device wafers, which is characterized in that
The surface reduction processing includes: that reduction reaction gas is passed through into reaction chamber, is gone back to the oxide layer of the crystal column surface
Original reaction.
3. the surface treatment method according to claim 2 for carrying out Shooting Technique for device wafers, which is characterized in that institute
Stating reducing gas is H2、N2Or CH4。
4. the surface treatment method according to claim 3 for carrying out Shooting Technique for device wafers, which is characterized in that institute
The temperature for stating surface reduction is 200~500 DEG C.
5. the surface treatment method according to claim 1 for carrying out Shooting Technique for device wafers, which is characterized in that institute
Stating plasma cleaning process includes: to excite inorganic gas for plasma state, carries out sputtering etching to the crystal column surface.
6. the surface treatment method according to claim 5 for carrying out Shooting Technique for device wafers, which is characterized in that institute
The stimulating frequency for stating inorganic gas is the plasma of 40KHZ.
7. the surface treatment method according to claim 6 for carrying out Shooting Technique for device wafers, which is characterized in that institute
Stating inorganic gas is argon gas.
8. the surface treatment method according to claim 1 for carrying out Shooting Technique for device wafers, which is characterized in that institute
The encapsulating material for stating Shooting Technique is epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811604319.XA CN109616404A (en) | 2018-12-26 | 2018-12-26 | The surface treatment method of Shooting Technique is carried out for device wafers |
Applications Claiming Priority (1)
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|---|---|---|---|
| CN201811604319.XA CN109616404A (en) | 2018-12-26 | 2018-12-26 | The surface treatment method of Shooting Technique is carried out for device wafers |
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| CN109616404A true CN109616404A (en) | 2019-04-12 |
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Citations (7)
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| CN102163591A (en) * | 2010-12-02 | 2011-08-24 | 天水华天科技股份有限公司 | Spherical grating array IC (integrated circuit) chip packaging part and production method thereof |
| CN102629604A (en) * | 2012-04-06 | 2012-08-08 | 天水华天科技股份有限公司 | Cantilever type IC (Integrated Circuit) chip stack package of BT (Bismaleimide Triazine) substrate and production method of cantilever type IC chip stack package |
| CN103700738A (en) * | 2013-12-29 | 2014-04-02 | 哈尔滨固泰电子有限责任公司 | LED (Light-Emitting Diode) packaging method and LED device on basis of special substrate |
| CN104347349A (en) * | 2013-07-24 | 2015-02-11 | 台湾积体电路制造股份有限公司 | Mechanisms for cleaning substrate surface for hybrid bonding |
| CN105018896A (en) * | 2014-04-22 | 2015-11-04 | 常州二维碳素科技股份有限公司 | Graphene film as well as preparation method and application thereof |
| CN108288582A (en) * | 2018-01-11 | 2018-07-17 | 北京华碳科技有限责任公司 | A kind of wafer scale GaN device substrate transfer method |
| US10163804B2 (en) * | 2013-12-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company | Molding structure for wafer level package |
-
2018
- 2018-12-26 CN CN201811604319.XA patent/CN109616404A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163591A (en) * | 2010-12-02 | 2011-08-24 | 天水华天科技股份有限公司 | Spherical grating array IC (integrated circuit) chip packaging part and production method thereof |
| CN102629604A (en) * | 2012-04-06 | 2012-08-08 | 天水华天科技股份有限公司 | Cantilever type IC (Integrated Circuit) chip stack package of BT (Bismaleimide Triazine) substrate and production method of cantilever type IC chip stack package |
| CN104347349A (en) * | 2013-07-24 | 2015-02-11 | 台湾积体电路制造股份有限公司 | Mechanisms for cleaning substrate surface for hybrid bonding |
| US10163804B2 (en) * | 2013-12-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company | Molding structure for wafer level package |
| CN103700738A (en) * | 2013-12-29 | 2014-04-02 | 哈尔滨固泰电子有限责任公司 | LED (Light-Emitting Diode) packaging method and LED device on basis of special substrate |
| CN105018896A (en) * | 2014-04-22 | 2015-11-04 | 常州二维碳素科技股份有限公司 | Graphene film as well as preparation method and application thereof |
| CN108288582A (en) * | 2018-01-11 | 2018-07-17 | 北京华碳科技有限责任公司 | A kind of wafer scale GaN device substrate transfer method |
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Application publication date: 20190412 |