CN109609915A - Without process engineering semiconductor nano material preparation system - Google Patents
Without process engineering semiconductor nano material preparation system Download PDFInfo
- Publication number
- CN109609915A CN109609915A CN201910019341.6A CN201910019341A CN109609915A CN 109609915 A CN109609915 A CN 109609915A CN 201910019341 A CN201910019341 A CN 201910019341A CN 109609915 A CN109609915 A CN 109609915A
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- laser
- nano material
- process engineering
- material preparation
- target seat
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 37
- 238000010327 methods by industry Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000002105 nanoparticle Substances 0.000 claims abstract description 8
- 230000003993 interaction Effects 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 230000007246 mechanism Effects 0.000 claims description 30
- 230000003028 elevating effect Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The present invention provides a kind of no process engineering semiconductor nano material preparation systems, comprising: a generating device of laser is used to issue the laser of default specification；One spectrophotometric device is used to for the laser being divided to form N beam laser, and wherein N is the natural number greater than 1；N number of lens, N number of lens are located in the optical path of the N beam laser, to be respectively used to carry out optically focused to corresponding sub- laser；N number of target seat, N number of target seat is distributed along default spherical surface and is located in the optical path of the N beam laser, N number of target seat is used to correspond to sub- laser and focuses on corresponding target seat and evaporate the target on corresponding target seat to form brightness plumage for carrying different targets, each lens；One substrate structure is located above N number of target seat, and the substrate structure is used for for deposition forms nano-particle layer on it after the road N brightness plumage interaction.
Description
Technical field
The present invention relates to field of nano material preparation, and in particular to a kind of no process engineering semiconductor nano material preparation system
System.
Background technique
No process engineering is realized to this partly by controlling unordered-ordered structure of semiconductor material lattice in nanoscale
The modulation of conductor material electronics energy band, the optimization of Yi Ji electricity, light and chemical property.In general, without process engineering semiconductor nano material
It is the oxide semiconductor material prepared by the chemical synthesis means of high temperature hydrogenation.First nanometer is prepared with the method for chemistry
Then grain carries out high temperature hydrogenation processing in tube furnace, tube furnace is small in size, and the sample tested every time can only be a small amount of；And
And since hydrogen is easy to explode, the moment is needed to take care experimenter.
Unordered-ordered structure that nanoscale control semiconductor material lattice is prepared using chemical method has following lack
Point:
First, when preparing unordered-orderly nanometer material structure with chemical method, spend the time longer.
Second, when chemical method prepares semiconductor nano material, presoma is needed, which limits some semiconductor materials to exist
Application in terms of disordering.
Third, chemical method are difficult to control the unordered orderly ratio of nano material.
4th, the disordering needs of the nano material of general chemical method preparation carry out in tube furnace, this is just significantly
Experimental cost is improved, and yield is very low.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The object of the present invention is to provide a kind of no process engineering semiconductor nano material preparation systems, have and improve efficiency, drop
The beneficial effect of low cost.
The embodiment of the invention provides a kind of no process engineering semiconductor nano material preparation systems, comprising:
One generating device of laser is used to issue the laser of default specification；
One spectrophotometric device is used to for the laser being divided to form N beam laser, and wherein N is the natural number greater than 1；
N number of lens, N number of lens are located in the optical path of the N beam laser, to be respectively used to corresponding sub- laser
Carry out optically focused；
N number of target seat, N number of target seat are distributed along default spherical surface and are located in the optical path of the N beam laser, institute
It states N number of target seat and focuses on corresponding target seat for sub- laser will to be corresponded to for carrying different targets, each lens
And it evaporates the target on corresponding target seat to form brightness plumage；
One substrate structure is located above N number of target seat, and the substrate structure is used for for after the road N brightness plumage interaction
Deposition forms nano-particle layer on it.
It further include N number of laser energy decaying in no process engineering semiconductor nano material preparation system of the present invention
Device；
N number of laser energy attenuator is located in the optical path of the N beam laser, and the laser energy attenuator position
Between spectrophotometric device and corresponding lens.
In no process engineering semiconductor nano material preparation system of the present invention, the spectrophotometric device includes a reflection
Mirror and at least one spectroscope；
The reflecting mirror and at least one spectroscope are successively spaced setting, at least one described spectroscope is located at the reflecting mirror
Between the generating device of laser, the laser and spectroscopical angle are acute angle.
It further include a supporting mechanism, the N in no process engineering semiconductor nano material preparation system of the present invention
A target seat is set on the supporting mechanism.
In no process engineering semiconductor nano material preparation system of the present invention, the supporting mechanism is in hemispherical Shell
Shape, N number of target seat are set on the inner wall of the supporting mechanism.
In no process engineering semiconductor nano material preparation system of the present invention, the central axes of N number of target seat
Intersect at the centre of sphere of the hemispherical Shell.
In no process engineering semiconductor nano material preparation system of the present invention, further includes a vacuum chamber and be used for
The regulating device of the indoor air pressure of the vacuum is adjusted, the lens, the target seat and the substrate structure are respectively positioned on institute
State vacuum chamber；The regulating device and the vacuum chamber.
In no process engineering semiconductor nano material preparation system of the present invention, it is arranged on the side wall of the vacuum chamber
There is the transmittance section for passing through for the sub- laser.
It further include an elevating mechanism in no process engineering semiconductor nano material preparation system of the present invention, it is described
Elevating mechanism is set on the interior roof of the vacuum chamber, and the substrate structure is set on the elevating mechanism, the liter
Descending mechanism is used to adjust the vertical height of the substrate structure.
In no process engineering semiconductor nano material preparation system of the present invention, the substrate structure include pedestal,
The heating layer being set on the pedestal and the substrate being set on the heating layer.
The present invention is used to issue the laser of default specification by providing generating device of laser；One spectrophotometric device, is used for
The laser is divided to form N beam laser, wherein N is the natural number greater than 1；N number of lens, N number of lens distinguish position
In in the optical path of the N beam laser, to be respectively used to carry out optically focused to corresponding sub- laser；N number of target seat, N number of target
Material seat is distributed along default spherical surface and is located in the optical path of the N beam laser, and N number of target seat is for carrying difference
Target, each lens are used to correspond to sub- laser and focus on corresponding target seat and steam the target on corresponding target seat
Hair forms brightness plumage；One substrate structure is located above N number of target seat, and the substrate structure is used for mutual for the road the N brightness plumage
Deposition forms nano-particle layer on it after effect；To realize that physical method preparation without process engineering semiconductor nano, has and mentions
High efficiency reduces the beneficial effect of cost.
Detailed description of the invention
Fig. 1 is a kind of structure chart without process engineering semiconductor nano material preparation system in some embodiments of the invention.
Fig. 2 is another structure without process engineering semiconductor nano material preparation system in some embodiments of the invention
Figure.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In description of the invention, the meaning of " plurality " is two or more, unless otherwise specifically defined.
Fig. 1 is please referred to, Fig. 1 is one of some embodiments of the application without process engineering semiconductor nano material preparation system
Structure chart, this is without process engineering semiconductor nano material preparation system, comprising: a generating device of laser 10, a spectrophotometric device 20,
N number of laser energy attenuator 30, N number of lens 40, N number of target seat 50, substrate structure 60.Wherein N is the natural number greater than 1, example
Such as, N=3 in the present embodiment.
Wherein, which is used to issue the laser of default specification, and the generating device of laser 10 is adjustable
The power of the laser.
Wherein, spectrophotometric device 20 its be used for by the laser be divided with formed N beam laser spectrophotometric device include a reflecting mirror
22 and at least one spectroscope 21；The reflecting mirror 22 and at least one spectroscope 21 are successively spaced setting, it is described at least
One spectroscope 21 is between the reflecting mirror 22 and the generating device of laser, the folder of the laser and the spectroscope 21
Angle is acute angle.
Wherein, N number of lens 40 are located in the optical path of the N beam laser, be respectively used to corresponding sub- laser into
Row optically focused.Wherein, which can be convex lens.
Wherein, N number of laser energy attenuator 30 is located in the optical path of the N beam laser, and the laser energy is decayed
Device 30 is located between spectrophotometric device 20 and corresponding lens 40.The energy of the adjustable sub- laser of laser energy attenuator 30.
Wherein, which is distributed and is located in the optical path of the N beam laser, institute along default spherical surface
It states N number of target seat 50 and focuses on correspondence for sub- laser will to be corresponded to for carrying the target of different materials, each lens 40
Target seat 50 and evaporate the target on corresponding target seat 50 to form brightness plumage 100.Target seat 50 is in flat plate structure.
Wherein, which is located at N number of 50 top of target seat, and the substrate structure 60 is used to supply the road the N brightness plumage
Deposition forms nano-particle layer on it after 100 interactions.
Wherein, which includes pedestal 61, the heating layer 62 being set on the pedestal 61 and is set to institute
State the substrate 63 on heating layer 62.The heating layer 62 is for heating the substrate.Wherein, which can be using heating
Membrane layers, can also be using heating techniques such as heat generating ceramics.
Wherein, this further includes a supporting mechanism 200 without process engineering semiconductor nano material preparation system, N number of target seat
50 are set on the supporting mechanism 200.Supporting mechanism 200 is in hemispherical shell, and N number of target seat 50 is set to the support
On the inner wall of mechanism 200.The central axes of N number of target seat 50 intersect at the centre of sphere of the hemispherical Shell.
Referring to figure 2., in some embodiments, this includes: a laser without process engineering semiconductor nano material preparation system
Generating device 10, a spectrophotometric device 20, N number of laser energy attenuator 30, N number of lens 40, N number of target seat 50, substrate structure 60,
Vacuum chamber 70, elevating mechanism 80 and regulating device 90.Wherein N is the natural number greater than 1, for example, N=3 in the present embodiment.
Wherein, a generating device of laser 10, spectrophotometric device 20, N number of laser energy attenuator 30, N number of lens 40, N number of
Target seat 50, substrate structure 60 are identical as the structure in above-described embodiment, and so there is no need to repeated descriptions.
The lens 40, the target seat 50 and the substrate structure 60 are respectively positioned in the vacuum chamber 70；The adjusting dress
90 are set to be connected to the vacuum chamber 70.
Wherein, regulating device 90 is used to adjust the air pressure in the vacuum chamber 70, and regulating device 90 is that common gas mentions
For device, the gas for providing predetermined amount gives the vacuum chamber 70, to maintain air pressure or atmosphere in the vacuum chamber 70.This is true
Baroceptor is additionally provided in empty room 70.
Wherein, the transmittance section 71 for passing through for the sub- laser is provided on the side wall of the vacuum chamber 70.Transmittance section 71
It is made of the excellent material of translucency, so that sub- laser is injected wherein.
Wherein, which is set on the inner roof wall of the vacuum chamber, and the substrate structure 60 is set to described
The lower end of elevating mechanism 80, elevating mechanism 80 are used to adjust the vertical height of the substrate structure 60, that is to say and multiple target
The distance between seat 50.Wherein, which can use motor-driven elevating mechanism, can also be cooperated using motor
Screw rod carries out driving elevating mechanism, and the elevating mechanism 80 for realizing that upper-lower height is adjusted belongs to the prior art, therefore does not describe excessively.
In some embodiments, this can also include rotating mechanism without process engineering semiconductor nano material preparation system, should
Rotating mechanism uses motor driven, which connect each to adjust with each spectroscope or reflecting mirror of spectrophotometric device 20
The reflection angle of a spectroscope or reflecting mirror, so that position of the hot spot on target seat 50 is adjusted, thus to control several Shu Hui
The Degree of interaction of plumage, to control the disordering degree and unordered-ordered space distribution of prepared nano material.
In some embodiments, this can also include that a control is set without process engineering semiconductor nano material preparation system
It is standby, the control equipment respectively with the generating device of laser 10, heating layer 62, baroceptor, regulating device 90, elevating mechanism
80, rotating mechanism communicates to connect, to realize the monitoring and detection of indoor for vacuum air pressure, to the elevating mechanism 80 into
Row is controlled to adjust the height of the substrate structure, is controlled the heating layer to control its heating power, which occurs
Device 10 is controlled to control the power of the laser of its sending.
The control equipment can be adjusted by the power of generating device of laser 10 by adjusting the air pressure in vacuum chamber 70
Target adjusts the size of deposited nano particle at a distance from substrate structure；Wherein, power is higher, the size of nano particle
It is bigger；Air pressure is higher, and the size of nano particle is smaller；Distance more large scale is smaller.
The control equipment can be by adjusting position of the hot spot on target seat 50, to control the interaction of several Shu Huiyu
Degree, to control the disordering degree and unordered-ordered space distribution of prepared nano material.
The control equipment can be by the dough softening to each laser energy attenuator, thus to the energy of every beam laser
Amount is controlled, to adjust the ratio of a variety of materials, or even realizes the preparation of multi-layer nano-film.
The control equipment can control the indoor air pressure of the vacuum by the regulating device, to regulate and control the knot of nano material
Structure allows it by monocrystalline, the gradually transition of nanometer crystal orientation amorphous.
The reflection angle that the control equipment can adjust each spectroscope or reflecting mirror by controlling the rotating mechanism,
To adjust position of the hot spot on target seat 50, thus to control the Degree of interaction of several Shu Huiyu, to control made
The disordering degree of standby nano material and unordered-ordered space distribution.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the invention.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
Claims (10)
1. a kind of no process engineering semiconductor nano material preparation system characterized by comprising
One generating device of laser is used to issue the laser of default specification；
One spectrophotometric device is used to for the laser being divided to form N beam laser, and wherein N is the natural number greater than 1；
N number of lens, N number of lens are located in the optical path of the N beam laser, to be respectively used to corresponding sub- laser
Carry out optically focused；
N number of target seat, N number of target seat are distributed along default spherical surface and are located in the optical path of the N beam laser, institute
It states N number of target seat and focuses on corresponding target seat for sub- laser will to be corresponded to for carrying different targets, each lens
And it evaporates the target on corresponding target seat to form brightness plumage；
One substrate structure is located above N number of target seat, and the substrate structure is used for for after the road N brightness plumage interaction
Deposition forms nano-particle layer on it.
2. no process engineering semiconductor nano material preparation system according to claim 1, which is characterized in that further include N number of
Laser energy attenuator；
N number of laser energy attenuator is located in the optical path of the N beam laser, and the laser energy attenuator position
Between spectrophotometric device and corresponding lens.
3. no process engineering semiconductor nano material preparation system according to claim 1, which is characterized in that the light splitting machine
Structure includes a reflecting mirror and at least one spectroscope；
The reflecting mirror and at least one spectroscope are successively spaced setting, at least one described spectroscope is located at the reflecting mirror
Between the generating device of laser, the laser and spectroscopical angle are acute angle.
4. no process engineering semiconductor nano material preparation system according to claim 1, which is characterized in that further include one
Support mechanism, N number of target seat are set on the supporting mechanism.
5. no process engineering semiconductor nano material preparation system according to claim 4, which is characterized in that the support machine
Structure is in hemispherical shell, and N number of target seat is set on the inner wall of the supporting mechanism.
6. no process engineering semiconductor nano material preparation system according to claim 5, which is characterized in that N number of target
The central axes of material seat intersect at the centre of sphere of the hemispherical Shell.
7. no process engineering semiconductor nano material preparation system according to claim 1, which is characterized in that further include one true
Empty room and regulating device for adjusting the indoor air pressure of the vacuum, the lens, the target seat and the substrate
Structure is respectively positioned on the vacuum chamber；The regulating device and the vacuum chamber.
8. no process engineering semiconductor nano material preparation system according to claim 7, which is characterized in that the vacuum chamber
Side wall on be provided with transmittance section for passing through for the sub- laser.
9. no process engineering semiconductor nano material preparation system according to claim 7, which is characterized in that further include one liter
Descending mechanism, the elevating mechanism are set on the interior roof of the vacuum chamber, and the substrate structure is set to the elevator
On structure, the elevating mechanism is used to adjust the vertical height of the substrate structure.
10. no process engineering semiconductor nano material preparation system according to claim 1, which is characterized in that the substrate
Structure includes pedestal, the heating layer being set on the pedestal and the substrate being set on the heating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910019341.6A CN109609915B (en) | 2019-01-09 | 2019-01-09 | Disordered engineering semiconductor nano material preparation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910019341.6A CN109609915B (en) | 2019-01-09 | 2019-01-09 | Disordered engineering semiconductor nano material preparation system |
Publications (2)
| Publication Number | Publication Date |
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| CN109609915A true CN109609915A (en) | 2019-04-12 |
| CN109609915B CN109609915B (en) | 2020-12-01 |
Family
ID=66016490
Family Applications (1)
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|---|---|---|---|
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| CN1563959A (en) * | 2004-04-06 | 2005-01-12 | 中国科学院上海光学精密机械研究所 | Time resolution x-ray diffraction chromatography appts. |
| WO2005075700A1 (en) * | 2004-02-09 | 2005-08-18 | Paul Scherrer Institut | Pulsed protection window for applications in pulsed laser deposition |
| CN101275218A (en) * | 2008-05-21 | 2008-10-01 | 兰州大学 | Film preparation device and observation method for film growth |
| CN203715715U (en) * | 2014-03-05 | 2014-07-16 | 京东方科技集团股份有限公司 | Laser deposition and in-situ annealing system |
| CN106148902A (en) * | 2015-04-14 | 2016-11-23 | 天津职业技术师范大学 | A kind of femtosecond laser preparation method of uniformly thicker meso-porous titanium oxide nanometer particle film |
| CN108950485A (en) * | 2018-06-07 | 2018-12-07 | 深圳市矩阵多元科技有限公司 | Coating control method, system and the pulse laser depositing device of pulse laser depositing device |
-
2019
- 2019-01-09 CN CN201910019341.6A patent/CN109609915B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005075700A1 (en) * | 2004-02-09 | 2005-08-18 | Paul Scherrer Institut | Pulsed protection window for applications in pulsed laser deposition |
| CN1563959A (en) * | 2004-04-06 | 2005-01-12 | 中国科学院上海光学精密机械研究所 | Time resolution x-ray diffraction chromatography appts. |
| CN101275218A (en) * | 2008-05-21 | 2008-10-01 | 兰州大学 | Film preparation device and observation method for film growth |
| CN203715715U (en) * | 2014-03-05 | 2014-07-16 | 京东方科技集团股份有限公司 | Laser deposition and in-situ annealing system |
| CN106148902A (en) * | 2015-04-14 | 2016-11-23 | 天津职业技术师范大学 | A kind of femtosecond laser preparation method of uniformly thicker meso-porous titanium oxide nanometer particle film |
| CN108950485A (en) * | 2018-06-07 | 2018-12-07 | 深圳市矩阵多元科技有限公司 | Coating control method, system and the pulse laser depositing device of pulse laser depositing device |
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| CN109609915B (en) | 2020-12-01 |
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