CN109585477A - Flat-panel detector structure and preparation method thereof - Google Patents
Flat-panel detector structure and preparation method thereof Download PDFInfo
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- CN109585477A CN109585477A CN201811283739.2A CN201811283739A CN109585477A CN 109585477 A CN109585477 A CN 109585477A CN 201811283739 A CN201811283739 A CN 201811283739A CN 109585477 A CN109585477 A CN 109585477A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
The present invention provides a kind of flat-panel detector structure and preparation method thereof, and preparation method includes: offer substrate, in preparing lower electrode layer in substrate；Ray absorbent material liquid is provided, ray absorbent material liquid includes lead-containing compounds liquid；Ray absorbent material liquid is coated on lower electrode layer, with the ray absorbent material liquid based on coating in preparing conversion layer on lower electrode layer；In preparing upper electrode layer on conversion layer.Present invention improves over the materials of existing conversion layer, improve the ray absorption capacity of conversion layer, reduce the thickness of conversion layer, the forming method of conversion layer etc. is designed, solve the problems, such as that form polycrystalline structure exists, improve the homogeneity of device chemical composition and phase, the uniformity for improving image, improves the effective rate of utilization of raw material, simplified process equipment, the structure of detector is designed, the problem of improving leakage current, reduces the noise of detector, improves sensitivity and contrast, detector electrodes material is improved, cost is reduced.
Description
Technical field
The invention belongs to X-ray detection X technical fields, more particularly to a kind of flat-panel detector structure and preparation method.
Background technique
The property using X-ray short wavelength, easily penetrated, the different material spy different to X-ray absorption is imaged in X-ray radiation
Point is imaged by detecting the intensity through the X-ray of object.Direct digital radiography is to be penetrated X using semiconductor material
Linear light is directly changed into carrier (electronics or hole) and reads the technology of imaging.Direct digital radiography has highly sensitive
The characteristics of degree and high contrast, it can be applied to the fields such as medical radiation imaging, industrial flaw detection, safety check.
Currently, direct digital radiography to be to occupy absolute mainstream based on amorphous selenium (Se) material, business at present
(conversion layer is also referred to as conversion coating to the Direct-type X-ray detector conversion layer of change, and effect is by the incident x-ray photons of high-energy
And it is converted into a kind of film layer of carrier (electron hole pair)) material is made of amorphous selenium (Se), it is easy that amorphous selenium material has
The advantages of Macroscale homogenous forms a film, so be widely used.However, amorphous selenium material has the disadvantage that the crystallization temperature of amorphous selenium
Degree is 70 DEG C or so, becomes polycrystalline after amorphous selenium crystallization, causes device performance to change, cause device to lose under extreme conditions
Effect is (such as: when summer, closed was not transported in air-conditioned compartment, since high temperature prolonged in compartment can make amorphous selenium thin
Gradually crystallization is polycrystalline to film, eventually leads to properties of product variation and even fails)；The atomic number of selenium is low (34), so it penetrates X
Line (especially sigmatron) absorption difference needs to improve amorphous selenium film thickness to fully absorb X-ray, and the increase of film thickness can be led
Cause: the uniformity of film layer is deteriorated, and leads to image quality degradation；In order to sufficiently collect charge, the voltage at film layer both ends increase (such as:
For thicknesses of layers in 200um, voltage is about 2000V；And when thicknesses of layers reaches 2000um, required voltage is about
20000V), the use of high pressure can not only make the design difficulty and cost increase, reliability decrease of device, it is easier to operator
And patient causes security risk (as leaked electricity).
Therefore, a kind of flat-panel detector structure and preparation method thereof how is provided, to solve conversion layer in the prior art
The above problem and making improvements is necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of flat-panel detector structure and its
Preparation method is used for the problems such as solving absorption difference existing for conversion layer material in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation method of flat-panel detector structure,
Include the following steps:
Substrate is provided, and in preparing lower electrode layer in the substrate；
There is provided ray absorbent material liquid, wherein the ray absorbent material liquid includes lead-containing compounds liquid；
The ray absorbent material liquid is coated on the lower electrode layer, with the radiation absorption material based on coating
Feed liquid body is in preparing conversion layer on the lower electrode layer；And
In preparing upper electrode layer on the conversion layer.
As a kind of optinal plan of the invention, the composition of the lead-containing compounds liquid includes ray absorbent material and has
Solvent, wherein the ray absorbent material includes lead-containing compounds, and the ray absorbent material is dissolved in the organic solvent
Form the lead-containing compounds liquid.
As a kind of optinal plan of the invention, the lead-containing compounds include PbO, PbO2、Pb3O4、Pb12O19、PbI2、
PbBr2、PbF2, at least one of PbS, PbSe and PbTe；The organic solvent includes ethyl alcohol.
As a kind of optinal plan of the invention, the ray absorbent material liquid is coated on the lower electrode layer
Mode includes: any one in blade coating, squash type slot coated, inkjet printing and silk-screen printing.
As a kind of optinal plan of the invention, the substrate includes substrate and the transistor that is formed on the substrate
Functional layer, wherein the transistor function layer includes transistor source, and the transistor source is electrically connected with the lower electrode layer
It connects.
As a kind of optinal plan of the invention, further include the steps that forming boundary layer, the boundary in the preparation method
Surface layer includes at least one of hole transmission layer and electron transfer layer, wherein the hole transmission layer, which is formed in, described turns light
Between layer and the upper electrode layer, the electron transfer layer is formed between the conversion layer and the lower electrode layer.
As a kind of optinal plan of the invention, the mode for forming the electron transfer layer includes blade coating, squash type slit
Any one in coating, inkjet printing and silk-screen printing；The mode for forming the hole transmission layer is narrow including blade coating, squash type
Stitch any one in coating, inkjet printing and silk-screen printing.
As a kind of optinal plan of the invention, the material of the hole transmission layer includes Se and MoO3In at least one
Kind, the material of the electron transfer layer includes TiO2And at least one of AZO.
As a kind of optinal plan of the invention, the boundary layer includes the hole transmission layer, the upper electrode layer
Material includes at least one of Ag, A and Mo.
The present invention also provides a kind of flat-panel detector structures, comprising:
Substrate；
Lower electrode layer is formed in the substrate；
Conversion layer is formed on the lower electrode layer, wherein the conversion layer includes lead-containing materials layer, the leaded material
It include lead-containing compounds in the bed of material；And
Upper electrode layer is formed on the conversion layer.
As a kind of optinal plan of the invention, the lead-containing compounds include PbO, PbO2、Pb3O4、Pb12O19、PbI2、
PbBr2、PbF2, at least one of PbS, PbSe and PbTe.
As a kind of optinal plan of the invention, the substrate includes substrate and the transistor function on the substrate
Ergosphere, wherein the transistor function layer includes transistor source, and the transistor source is electrically connected with the lower electrode layer.
As a kind of optinal plan of the invention, the flat-panel detector structure further includes boundary layer, the boundary layer packet
Include at least one of hole transmission layer and electron transfer layer, wherein the hole transmission layer be located at the conversion layer with it is described
Between upper electrode layer, the electron transfer layer is between the conversion layer and the lower electrode layer.
As a kind of optinal plan of the invention, the material of the hole transmission layer includes Se and MoO3In at least one
Kind, the material of the electron transfer layer includes TiO2And at least one of AZO.
As a kind of optinal plan of the invention, the boundary layer includes hole transmission layer, the material of the upper electrode layer
Including at least one of Ag, Al and Mo.
As described above, flat-panel detector structure and preparation method thereof of the invention, improves the material of existing conversion layer,
The ray absorption capacity for improving conversion layer reduces the thickness of conversion layer, improves image quality, simplifies the design of device
Difficulty improves the reliability of device, reduces the security risk caused by operator and patient, the present invention is also to conversion layer etc.
Forming method be designed, solve the problems, such as that form polycrystalline structure exists, and improve the equal of device chemical composition and phase
One property, improves the uniformity of image, improves the effective rate of utilization of raw material, improves the preparation rate of material layer, simplifies technique
Equipment reduces cost, in addition, the problem of present invention is designed to the structure of detector, improves leakage current, reduces detection
The noise of device improves detector sensitivity and contrast etc., improves detector electrodes material, reduces process costs.
Detailed description of the invention
Fig. 1 is shown as the preparation process flow schematic diagram of flat-panel detector structure of the invention.
Fig. 2 is shown as providing the structural schematic diagram of substrate in flat-panel detector structure preparation of the invention.
The structural schematic diagram that the substrate that Fig. 3 is shown as in flat-panel detector structure preparation of the invention is constituted.
Fig. 4 is shown as forming the structural schematic diagram of lower electrode layer in flat-panel detector structure preparation of the invention.
Fig. 5 is shown as forming the structural schematic diagram of conversion layer in flat-panel detector structure preparation of the invention.
Fig. 6 is shown as forming the structural schematic diagram of upper electrode layer in flat-panel detector structure preparation of the invention.
Fig. 7 is shown as the flat-panel detector structure work connection schematic diagram that an example of the invention provides.
Fig. 8 is shown as the work function contrast schematic diagram of different materials.
Fig. 9 is shown as the flat panel detector conversion layer and TFT layer schematic equivalent circuit that an example of the invention provides.
Component label instructions
100 substrates
100a substrate
100b transistor function layer
101 lower electrode layers
102 conversion layers
103 upper electrode layers
104 hole transmission layers
105 electron transfer layers
106 transistor gates
107 transistor sources
108 transistor drains
109 photodiodes
110 sense lines
111 scan lines
S1~S4 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 9.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout form may also be increasingly complex.
As shown in Figure 1, the present invention provides a kind of preparation method of flat-panel detector structure, include the following steps:
Substrate is provided, and in preparing lower electrode layer in the substrate；
There is provided ray absorbent material liquid, wherein contain lead element in the ray absorbent material liquid；
The ray absorbent material liquid is coated on the lower electrode layer, with the radiation absorption material based on coating
Feed liquid body is in preparing conversion layer on the lower electrode layer；And
In preparing upper electrode layer on the conversion layer.
Below in conjunction with the preparation of the attached drawing flat-panel detector structure that the present invention will be described in detail.
Firstly, shown in S1 and Fig. 2-4 as shown in figure 1, substrate 100 is provided, and in preparing lower electrode layer in the substrate
101；
Specifically, substrate 100 is provided, to prepare flat-panel detector structure (such as linear type X-ray in the substrate 100
Flat panel detector) in dependency structure layer, the substrate 100 may include substrate of glass, it is, of course, also possible to include plate detect
The other function layer that device needs is designed according to actual demand.Then, lower electrode layer 101 is prepared in the substrate 100, it is described
The material of lower electrode layer 101 include but is not limited to ITO (tin indium oxide) perhaps Ag can using sputtering or vapor deposition by the way of shape
At.
As an example, the substrate 100 includes substrate 100a and the transistor function layer being formed on the substrate 100a
100b, wherein the transistor function layer 100b includes transistor source, the transistor source and the lower electrode layer 101
Electrical connection.
Specifically, as shown in figure 4, in one example, providing a kind of structure of substrate 100, including substrate 100a and crystal
Pipe functional layer 100b, in the example, the substrate 100a can be glass substrate, and the transistor function layer 100b can be
TFT (Thin Film Transistor, thin film transistor (TFT)) layer, in the example, the source transistor in TFT layer (as switching layer)
Pole (source) (referring to the transistor source 107 in Fig. 9) is electrically connected with the lower electrode layer 101, that is, passes through the lower electrode
101 realization of layer is electrically connected with the conversion layer 102, carries out signal transmission, certainly, the transistor function layer further includes crystal
Tube grid and transistor drain can be the transistor function layer in one example, such as the transistor source layer in TFT layer
Same material layer is shared with transistor drain layer and the lower electrode layer.
Then, shown in S2 as shown in figure 1, ray absorbent material liquid is provided, wherein in the ray absorbent material liquid
Containing lead element, the ray absorbent material liquid includes lead-containing compounds liquid.Continue, shown in S3 and Fig. 5 as shown in figure 1,
The ray absorbent material liquid is coated on the lower electrode layer 101, with the ray absorbent material liquid based on coating
Body is in preparing conversion layer 102 on the lower electrode layer 101.
Specifically, preparing conversion layer 102 on the lower electrode layer 101, wherein conversion layer is also referred to as conversion coating, can be with
By the incident x-ray photons of high-energy and be converted into carrier (electron hole pair), the present invention in, using contain lead (Pb) element
The ray absorbent material liquid prepare the conversion layer 102, the atomic number of lead is 82, by taking lead oxide (PbO) as an example,
The density of PbO is 9.53g/cm3, therefore have very strong absorption to X-ray, in one example, for example, absorbing equal energy
Under X-ray, the thickness of PbO film layer is only amorphous Se film layer thickness 1/10th to one third, such as: mammary gland inspection
Surveying the X-ray energy needed is 10KeV-30KeV, and the thickness of amorphous selenium film is about 200 μm -500 μm, and chest x-ray uses
X-ray energy be 50KeV-80KeV need to need to reach 800 μm -2000 for amorphous selenium film thickness to fully absorb X-ray
μm；However, PbO thicknesses of layers only needs 10 μm -50 μm, when X-ray energy is when X-ray energy is 10KeV-30KeV
When 50KeV-80KeV, PbO thicknesses of layers is 200 μm -800 μm.That is, the ray absorbent material containing Pb element
The conversion layer 102 being prepared shown in liquid can significantly improve the ray absorption capacity of the conversion layer 102, such as penetrate to X
The absorbability of line, especially sigmatron, to reduce the institute under same radiation absorption energy when guaranteeing radiation absorption
The thicknesses of layers for stating conversion layer 102 it is brought to solve the problems, such as that film thickness increases, that is, solve and turn light caused by film thickness increase
The problem of layer uniformity is deteriorated, leads to image quality degradation, reduces to sufficiently collect film layer both ends caused by charge
The problem of voltage increases so that the use for reducing high pressure rises the design difficulty of device, reliability decrease, and is easier
The problems such as security risk is caused to operator and patient.
As an example, the composition of the lead-containing compounds liquid includes ray absorbent material and organic solvent, wherein described
Ray absorbent material includes lead-containing compounds, and the ray absorbent material, which is dissolved in the organic solvent, forms the leaded chemical combination
Thing liquid body.
As an example, the lead-containing compounds include PbO, PbO2、Pb3O4、Pb12O19、PbI2、PbBr2、PbF2、PbS、
At least one of PbSe and PbTe；The organic solvent includes ethyl alcohol.
Specifically, ray absorbent material liquid can be ray absorbent material solution, it is outstanding to be also possible to ray absorbent material
Turbid is dissolved in and (dissolves or be uniformly distributed) side in the organic solvent by the ray absorbent material in one example
Formula forms the ray absorbent material liquid, wherein can be the material containing lead element in the ray absorbent material, one
In example, the ray absorbent material liquid is formed by the way that lead-containing compounds are dissolved in the mode in organic solvent, it is described leaded
Compound can be any one in above compound, be also possible to the group of two or more in above compound
It closes, by taking PbO as an example, PbO nano particle or quantum dot is dispersed in ethyl alcohol, and is stirred, form the ray
Absorbing material liquid.
As an example, the mode that the ray absorbent material liquid is coated on the lower electrode layer 101 includes: to scrape
Any one in painting, squash type slot coated (slot-die), inkjet printing and silk-screen printing.
Specifically, in the example, a kind of coating ray absorbent material liquid is provided to form the conversion layer 102
Mode, that is, pass through solwution method (as blade coating, inkjet printing, silk-screen printing) the production conversion layer 102, wherein scratching can be with
It is to apply to be filled with the method that the material coating for needing thickness is made by hand using progress such as scrapers, squash type slot coated is using one
Fixed pressure dries the Solution extrusion in film head to substrate surface after coating, so that film layer required for being formed, ink-jet are beaten
After print can be the solution reagent that spray head absorption needs to spray, the surface of structure to be processed is moved to, temperature-sensitive or acoustic control are passed through
Etc. the power of forms injector drop is ejected into body structure surface to be processed, to form the side for needing the film layer of thickness
Method, silk-screen printing, which can be, can pass through solution reagent using screen printing forme areas mesh, and non-graphic part mesh cannot be saturating
The basic principle for crossing solution reagent is printed, and pours into the solution (ray absorbent material in one end of screen printing forme when printing
Liquid), certain pressure is applied to the solution position on screen printing forme with scraper plate, while at the uniform velocity moving towards the screen printing forme other end,
Solution is expressed to stock (body structure surface to be processed, such as lower electrode by scraper plate from the mesh of areas on the move
Layer surface) on, solwution method is machined with following advantage: the ray absorbent material of amorphous can be used in solwution method, such as the PbO amount of amorphous
Crystal boundary is not present in son point or nano particle, amorphous, can be to avoid above-mentioned problems various as caused by crystal boundary；Solwution method processing can be with
The uniform film of thickness is obtained, avoids that film longitudinal direction chemical formula is inhomogenous, the first-class drawback of uneven thickness, solwution method forms film
Whole, the uniformity to form image can be improved in chemical composition and Xiang Junyi including bottom and top；Solwution method material uses
Rate is high (being close to 100%), and speed is fast, not will cause waste；Solwution method owns without using plasma and high-vacuum equipment
Technique can carry out in air atmosphere, effectively reduce producing line construction cost, that is to say, that solwution method of the invention can be with shape
At non crystalline structure, the defect for forming the conversion layer of polycrystalline structure is solved, there is apparent crystal boundary, the generations of crystal boundary for polycrystalline structure
The migration that will cause carrier (electronics or hole) is obstructed, and is caused the collection of carrier incomplete, is influenced picture contrast, crystal boundary
Assembling in the presence of will lead to carrier in grain boundaries, causing carrier that can not collect completely in present frame (such as first frame), next
The carrier that frame (such as the second frame) is not collected completely when reading can release under room temperature effect, result in the second frame image
Ghost in have the ghost (ghosting) of previous frame (first frame), polycrystalline can cause the compactness of film layer to reduce, compactness drop
It is low to cause X-ray absorption less able, to reach same absorbability, need to increase film thickness, the increase of film thickness leads to current-carrying
Sub (electronics or hole) can not be transmitted at electrode, so leading to the deterioration of read output signal, cause the decline of picture contrast；Such as
Increase contrast, it is necessary to improve voltage and sufficiently collect by carrier, dark current (dark can be greatly improved by improving operating voltage
Current), response device degree is caused to decline, excessively high dark current causes device not respond to (generate because of X-ray to X-ray
Photo-generated carrier is covered by background noise).
Finally, preparing upper electrode layer 103 on Yu Suoshu conversion layer 102 shown in S4 and Fig. 6 as shown in figure 1.
Specifically, forming the upper electrode layer 103 on the conversion layer 102, can be formed by way of vapor deposition,
In, the material of the upper electrode layer 103 of formation can realize the work of detector according to actually being selected.In addition, above-mentioned
In the step of preparing the panel detector structure can with exchange step carry out process implementing can be according to actual exchange sequence of steps.
As an example, further including the steps that forming boundary layer in the preparation method, the boundary layer includes hole transport
Layer at least one of 104 and electron transfer layer 105, the hole transmission layer 104 be formed in the conversion layer 102 with it is described on
Between electrode layer 103, the electron transfer layer 105 is formed between the conversion layer 102 and the lower electrode layer 101.
Specifically, as shown in fig. 7, in one example, introducing the boundary between the conversion layer 102 and upper/lower electrode layer
Surface layer can be and only introduce the hole transmission layer 104 between the conversion layer 102 and the upper electrode layer 103, can also be with
It is only to introduce the electron transfer layer 105 between the conversion layer 102 and the lower electrode layer 101, is also possible to exist simultaneously
The hole transmission layer 104 is introduced between the conversion layer 102 and the upper electrode layer 103 and in the conversion layer 102 and institute
It states and introduces the electron transfer layer 105 between lower electrode layer 101.
As an example, the material of the hole transmission layer 104 includes Se and MoO3At least one of, the electron-transport
The material of layer 105 includes TiO2And at least one of AZO (ZnO:Al, the zinc oxide of aluminium doping).
As an example, the boundary layer includes the hole transmission layer 104, the material of the upper electrode layer 103 include Ag,
At least one of Al and Mo.
Specifically, the transmission of carrier hole may be implemented for the hole transmission layer 104 namely electronic barrier layer,
Stop electron-transport simultaneously, further, in one example, the presence of the hole transmission layer 104, which can also reduce, described turns light
Work function at bed boundary can be used cheap silver, aluminium or molybdenum, avoid so as to improve the material of the upper electrode layer
Using expensive element, cost is reduced, in one example, the material of the hole transmission layer 104 is selected from Se and MoO3In
At least one can be Se layers, be also possible to MoO3Layer can also be the laminated construction that the two is constituted, for Se layers, reference
Shown in Fig. 8, the transmission in hole can only occur in valence band, by taking the lead-containing compounds are selected as PbO as an example, it can be seen that PbO
Valence band highest point (top of valence band) be -5.2eV, and Ag work function (Ag is metal, it is believed that conduction band is mixed with valence band, therefore
Indicated in figure with horizontal line) it is -4.5eV, if hole will be directly transferred to Ag electrode from PbO, hole needs to overcome the gesture of 0.7eV
It builds (energy difference), this potential barrier is excessive, causes hole that can not be transmitted to Ag electrode.And the work function of gold element is -5.0eV or so
(not marking on the diagram), hole are transmitted to golden (Au) electrode from PbO valence band, it is only necessary to overcome the potential barrier of 0.2eV.So working as PbO
When directly contacting with metal material (electrode), the higher metal material of work function (such as gold, rhodium, the noble metals such as platinum) can only be selected to make
For electrode material.However, in one example, it is found that hole transmission layer 104 can choose from work function figure as shown in Figure 8:
Se or MoO3, for Se layers, the top of valence band position of Se is in -4.8eV, if Se element layer is inserted between PbO and Ag electrode,
Then hole is transmitted to Se (potential barrier 0.4eV) from PbO first, back cavitation be transmitted to (gesture from Ag electrode from the top of valence band of Se again
Building is 0.3eV), such Se, which is equivalent to, to be played a function served as bridge hole is enabled to be transmitted to Ag electrode, such case, and one
As be properly termed as work function modification, that is, the covert work function for reducing PbO, similarly, MoO3It is risen as hole transmission layer
Same effect is arrived.
In addition, the electron transfer layer 105 also can have the effect for reducing work function and stopping hole transport electronics,
In one example, the material of the lower electrode layer is selected as Ag or Al, and the transmission of electronics can only carry out in conduction band, PbO's
Conduction band positions are -3.0eV, and lower electrode layer generally uses the source electrode (source) of TFT or drain electrode (drain), material are
Ag or Al, it is found that PbO conduction level position (- 3.0eV) is higher than Ag work function (- 4.5eV) from the work function figure in Fig. 8,
Electronics very easily directly can transit to Ag electrode from the PbO conduction band of high level, so electronics described in this example passes
The purpose of defeated layer is in order to stop hole to enter lower electrode layer, to increase quantum efficiency (transfer efficiency) and reduce dark current.
As an example, the mode for forming the electron transfer layer 105 includes blade coating, squash type slot coated (slot-
Die), any one in inkjet printing and silk-screen printing；The mode for forming the hole transmission layer 104 includes blade coating, squeezes
Any one in formula slot coated (slot-die), inkjet printing and silk-screen printing.
Specifically, can be used for the generation type of the hole transmission layer 104 and the electron transfer layer 105
Solwution method such as can be any one in blade coating, squash type slot coated (slot-die), inkjet printing and silk-screen printing.
The technical process that panel detector structure is prepared based on solwution method in order to further illustrate the present invention, provides an example,
Include the following steps: TiO 1)2Or AZO quantum dot or nano particle are dispersed in ethyl alcohol, are stirred；2) in TFT
It is coated to form electron transfer layer with solwution method on substrate (preparing transistor function layer), the above-mentioned nanometer material of electron transfer layer
Material/quantum dot dispersion liquid, thicknesses of layers 1000nm-3000nm；3) above-mentioned film layer has been coated with to be placed in 100 DEG C of baking ovens sufficiently
It is dry, it is such as 5 minutes dry；4) PbO nano particle or quantum dot are dispersed in ethyl alcohol, and stirred；5) upper
It states the above-mentioned solution of electron transfer layer coated thereon and forms PbO conversion layer, thicknesses of layers is 50 μm -800 μm；6) it has been coated with above-mentioned film
Layer is placed in 100 DEG C of baking ovens sufficiently dry, such as drying 5 minutes；7) by Se or MoO3Quantum dot or nano particle are dispersed in
In ethyl alcohol, stir；8) in above-mentioned PbO conversion layer coated thereon hole transmission layer, hole transport layer material uses upper
State Se or MoO3Dispersion liquid, thicknesses of layers 1000nm-3000nm；9) above-mentioned film layer has been coated with to be placed in 100 DEG C of baking ovens
It is sufficiently dry, it is such as 5 minutes dry；10) Ag Al electrode is deposited on the hole transport layer.To implementation through the above scheme
The ghost (ghost) of image is avoided using amorphous PbO, the processing is simple using solwution method technique, without high-vacuum equipment and waits
Ion device, process costs are low, are reduced leakage current using boundary layer and improved and improved detector sensitivity and final figure and compare
Degree adjusts work function using boundary layer, makes top electrode that silver or aluminium inexpensively can be used, avoids using expensive gold
Element effectively reduces cost.
In addition, as Figure 6-9, and refering to fig. 1-5, the present invention also provides a kind of flat-panel detector structures, comprising:
Substrate 100；
Lower electrode layer 101 is formed in the substrate 100；
Conversion layer 102 is formed on the lower electrode layer 101, wherein contain lead element in the conversion layer 102, it is described
Conversion layer includes lead-containing materials layer, includes lead-containing compounds in the lead-containing materials layer；And
Upper electrode layer 103 is formed on the conversion layer 102.
Specifically, including substrate 100 in the flat-panel detector structure of the invention, can be used in the substrate 100
Prepare the dependency structure layer in flat-panel detector structure (such as linear type X-ray flat panel detector), wherein the substrate 100 can
To include substrate of glass, it is, of course, also possible to include the other function layer that flat panel detector needs, designed according to actual demand.Separately
Outside, the lower electrode layer 101 is formed in the substrate 100, the material of the lower electrode layer 101 can be but not limited to
ITO (tin indium oxide) or Ag.
As an example, the substrate 100 includes the substrate 100a and transistor function layer 100b on the substrate,
In, the transistor function layer 100b includes transistor source, and the transistor source is electrically connected with the lower electrode layer 101.
In one example, the substrate 100 includes substrate 100a and transistor function layer 100b, in the example, the base
Plate 100a can be glass substrate, and the transistor function layer 100b can be TFT (Thin Film Transistor, film
Transistor) layer, 101 electricity of transistor source (source) and the lower electrode layer in the example, in TFT layer (as switching layer)
Connection realized by the lower electrode layer 101 and is electrically connected with the conversion layer 102, progress signal transmission, in an example
In, it can be the transistor function layer, such as the transistor source layer and transistor drain layer and the lower electrode layer in TFT layer
Share same material layer.
As an example, the lead-containing compounds include PbO, PbO2、Pb3O4、Pb12O19、PbI2、PbBr2、PbF2、PbS、
At least one of PbSe and PbTe.
Specifically, conversion layer is also referred to as conversion coating for the conversion layer 102, it can be by the incident X-rays light of high-energy
Son is simultaneously converted into carrier (electron hole pair), and in the present invention, lead element, the atomic number of lead are contained in the conversion layer 102
It is 82, by taking lead oxide (PbO) as an example, the density of PbO is 9.53g/cm3, therefore have very strong absorption to X-ray, in an example
In, for example, absorb equal energy X-ray under, the thickness of PbO film layer be only amorphous Se film layer thickness very
One of to one third, such as: the X-ray energy that breast cancer needs is 10KeV-30KeV, and the thickness of amorphous selenium film is about 200 μ
M-500 μm, and the X-ray energy that chest x-ray uses is that 50KeV-80KeV needs to fully absorb X-ray by amorphous
Selenium film thickness needs to reach 800 μm -2000 μm；However, PbO thicknesses of layers only needs 10 μ when X-ray energy is 10KeV-30KeV
M-50 μm, when X-ray energy is 50KeV-80KeV, PbO thicknesses of layers is 200 μm -800 μm.That is, containing Pb member
The conversion layer 102 being prepared shown in the ray absorbent material liquid of element, can significantly improve the conversion layer 102
Ray absorption capacity, such as absorbability to X-ray, especially sigmatron, to reduce same when guaranteeing radiation absorption
The thicknesses of layers of the conversion layer 102 under radiation absorption energy it is brought to solve the problems, such as that film thickness increases, that is, solve
The problem of conversion layer uniformity caused by film thickness increases is deteriorated, and leads to image quality degradation, reduces to sufficiently collect charge
The problem of voltage at caused film layer both ends increases, thus the use for reducing high pressure increase the design difficulty of device, can
Decline by property, and is easier the problems such as security risk is caused to operator and patient.
Specifically, the conversion layer 102 can be a lead-containing materials layer, contain leaded chemical combination in the lead-containing materials layer
Object, so that the conversion layer contains the lead element, for example, in one example, the formation of the conversion layer 102 includes adopting
It is formed with ray absorbent material liquid, further, the formation raw material of the ray absorbent material liquid includes ray absorbent material
And organic solvent, the ray absorbent material is formed by the mode that the ray absorbent material is dissolved in the organic solvent
Liquid, wherein can be the material containing lead element in the ray absorbent material, such as contain lead-containing compounds, in an example
In, the ray absorbent material liquid, the leaded chemical combination are formed by the way that lead-containing compounds are dissolved in the mode in organic solvent
Object can be any one in above compound, be also possible to the combination of two or more in above compound, with
For PbO, PbO nano particle or quantum dot are dispersed in ethyl alcohol, and is stirred, form the radiation absorption material
Feed liquid body.
As an example, the flat-panel detector structure further includes boundary layer, the boundary layer include hole transmission layer 104 and
At least one of electron transfer layer 105, wherein the hole transmission layer 104 is located at the conversion layer 102 and the top electrode
Between layer 103, the electron transfer layer 105 is between the conversion layer 102 and the lower electrode layer 101.
Specifically, as shown in fig. 7, in one example, introducing the boundary between the conversion layer 102 and upper/lower electrode layer
Surface layer can be and only introduce the hole transmission layer 104 between the conversion layer 102 and the upper electrode layer 103, can also be with
It is only to introduce the electron transfer layer 105 between the conversion layer 102 and the lower electrode layer 101, is also possible to exist simultaneously
The hole transmission layer 104 is introduced between the conversion layer 102 and the upper electrode layer 103 and in the conversion layer 102 and institute
It states and introduces the electron transfer layer 105 between lower electrode layer 101.
As an example, the material of the hole transmission layer 104 includes Se and MoO3At least one of, the electron-transport
The material of layer 105 includes TiO2And at least one of AZO.
As an example, the boundary layer includes hole transmission layer 104, the material of the upper electrode layer 103 include Ag, Al with
And at least one of Mo.
Specifically, the transmission of carrier hole may be implemented for the hole transmission layer 104 namely electronic barrier layer,
Stop electron-transport simultaneously, further, in one example, the presence of the hole transmission layer 104, which can also reduce, described turns light
Cheap silver and aluminium can be used so as to improve the material of the upper electrode layer in work function at bed boundary, avoid using
Expensive element, reduces cost, and in one example, the material of the hole transmission layer 104 is selected from Se and MoO3In at least
One kind can be Se layers, is also possible to MoO3Layer can also be the laminated construction that the two is constituted, for Se layers, with reference to Fig. 8
Shown, the transmission in hole can only occur in valence band, by taking the lead-containing compounds are selected as PbO as an example, it can be seen that PbO
Valence band highest point (top of valence band) is -5.2eV, and (Ag is metal to the work function of Ag, it is believed that conduction band is mixed with valence band, therefore is schemed
It is middle to be indicated with horizontal line) it is -4.5eV, if hole will be directly transferred to Ag electrode from PbO, hole needs to overcome the potential barrier of 0.7eV
(energy difference), this potential barrier is excessive, causes hole that can not be transmitted to Ag electrode.And the work function of gold element is -5.0eV or so
(not marking on the diagram), hole are transmitted to golden (Au) electrode from PbO valence band, it is only necessary to overcome the potential barrier of 0.2eV.So working as PbO
When directly contacting with metal material (electrode), the higher metal material of work function (such as gold, rhodium, the noble metals such as platinum) can only be selected to make
For electrode material.However, in one example, it is found that hole transmission layer 104 can choose from work function figure as shown in Figure 8:
Se or MoO3, for Se layers, the top of valence band position of Se is in -4.8eV, if Se element layer is inserted between PbO and Ag electrode,
Then hole is transmitted to Se (potential barrier 0.4eV) from PbO first, back cavitation be transmitted to (gesture from Ag electrode from the top of valence band of Se again
Building is 0.3eV), such Se, which is equivalent to, to be played a function served as bridge hole is enabled to be transmitted to Ag electrode, such case, and one
As be properly termed as work function modification, that is, the covert work function for reducing PbO, similarly, MoO3It is risen as hole transmission layer
Same effect is arrived.
In addition, the electron transfer layer 105 also can have the effect for reducing work function and stopping hole transport electronics,
In one example, the material of the lower electrode layer is selected as Ag or Al, and the transmission of electronics can only carry out in conduction band, PbO's
Conduction band positions are -3.0eV, and lower electrode layer generally uses the source electrode (source) of TFT or drain electrode (drain), material are
Ag or Al, it is found that PbO conduction level position (- 3.0eV) is higher than Ag work function (- 4.5eV) from the work function figure in Fig. 8,
Electronics very easily directly can transit to Ag electrode from the PbO conduction band of high level, so electronics described in this example passes
The purpose of defeated layer is to stop hole to enter lower electrode layer.
In addition, the course of work of the flat panel detector in an example provided by the invention is as follows: device as shown in Fig. 7 and Fig. 9
Part upper electrode layer 103 connects DC power supply power cathode (public electrode, Vcom), lower electrode layer 105 is electrically connected with positive pole, electricity
Field intensity is 1 to 5V/um；When device does not have external X-ray photograph, electronics and hole are at conversion layer 102 (for PbO layers)
It inside exhausts, theoretically no current generates；When device receives X-ray exposure (as shown in Figure 7), x-ray photon makes PbO material
Ionization is generated, is generated photo-generated carrier (electron hole pair)；Under electric field action, hole toward upper electrode layer direction drift about and it is electric
Son drifts about toward lower electrode layer direction；But also have a small amount of electronics up electrode direction drift, also have a small amount of hole electrode down
Direction drift；Due to there is hole transmission layer between upper electrode layer and PbO layers, therefore only hole can be transmitted to upper electrode layer, electricity
Son is all blocked at boundary layer；Equally, there is electron transfer layer between lower electrode layer and PbO, therefore only electronics can pass
Lower electrode layer is transported to, and hole is stopped by electron transfer layer；Due to electrode under PbO photodiode 109 (the i.e. described conversion layer)
Connect with TFT source electrode (source) i.e. transistor source 107, therefore is transmitted to TFT source electrode after electron-transport to lower electrode layer again, and
It is stored in TFT source electrode；When TFT is opened, (when 106 voltage of transistor gate is greater than TFT threshold voltage, TFT is in open shape
State, transistor source 107 and transistor drain 108 are connected) after, electronics is transmitted to transistor drain from transistor source
(drain), it is subsequently transmitted to " sense line 110 " and is read by external circuit, in addition, further including signal control in equivalent circuit diagram
Scan line 111, to each pixel (group of a photodiode 109 and a TFT transistor is collectively referred to as a pixel in Fig. 9)
Do same operation, the gray scale of final image depends on the quantity of charge in respective pixel, and (such as: the charge of storage is more, gray scale
Value is higher, and corresponding pixel is brighter).
In conclusion the present invention provides a kind of flat-panel detector structure and preparation method thereof, preparation method includes: offer base
Bottom, and in preparing lower electrode layer in the substrate；There is provided ray absorbent material liquid, wherein the ray absorbent material liquid
Including lead-containing compounds liquid；The ray absorbent material liquid is coated on the lower electrode layer, with the institute based on coating
Ray absorbent material liquid is stated in preparing conversion layer on the lower electrode layer；And in preparing upper electrode layer on the conversion layer.
Through the above scheme, flat-panel detector structure and preparation method thereof of the invention improves the material of existing conversion layer, improves
The ray absorption capacity of conversion layer, reduces the thickness of conversion layer, improves image quality, and the design for simplifying device is difficult
Degree, improves the reliability of device, reduces the security risk caused by operator and patient, the present invention is also to conversion layer etc.
Forming method is designed, and solves the problems, such as that form polycrystalline structure exists, and improves the uniform of device chemical composition and phase
Property, the uniformity of image is improved, the effective rate of utilization of raw material is improved, improves the preparation rate of material layer, simplifies technique and sets
It is standby, cost is reduced, in addition, the problem of present invention is designed to the structure of detector, improves leakage current, reduces detector
Noise, improve detector sensitivity and contrast etc., improve detector electrodes material, reduce process costs.So
The present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (15)
1. a kind of preparation method of flat-panel detector structure, which comprises the steps of:
Substrate is provided, and in preparing lower electrode layer in the substrate；
There is provided ray absorbent material liquid, wherein the ray absorbent material liquid includes lead-containing compounds liquid；
The ray absorbent material liquid is coated on the lower electrode layer, with the ray absorbent material liquid based on coating
Body is in preparing conversion layer on the lower electrode layer；And
In preparing upper electrode layer on the conversion layer.
2. the preparation method of flat-panel detector structure according to claim 1, which is characterized in that the lead-containing compounds liquid
The composition of body includes ray absorbent material and organic solvent, wherein the ray absorbent material includes lead-containing compounds, described to penetrate
Line absorption material, which is dissolved in the organic solvent, forms the lead-containing compounds liquid.
3. the preparation method of flat-panel detector structure according to claim 2, which is characterized in that the lead-containing compounds packet
Include PbO, PbO2、Pb3O4、Pb12O19、PbI2、PbBr2、PbF2, at least one of PbS, PbSe and PbTe；It is described organic molten
Agent includes ethyl alcohol.
4. the preparation method of flat-panel detector structure according to claim 1, which is characterized in that by the radiation absorption material
The mode that feed liquid body is coated on the lower electrode layer includes: in blade coating, squash type slot coated, inkjet printing and silk-screen printing
Any one.
5. the preparation method of flat-panel detector structure according to claim 1, which is characterized in that the substrate includes substrate
And it is formed in the transistor function layer on the substrate, wherein the transistor function layer includes transistor source, the crystalline substance
Body pipe source electrode is electrically connected with the lower electrode layer.
6. the preparation method of flat-panel detector structure described in any one of -5 according to claim 1, which is characterized in that described
Further include the steps that being formed boundary layer in preparation method, the boundary layer include in hole transmission layer and electron transfer layer at least
It is a kind of, wherein the hole transmission layer is formed between the conversion layer and the upper electrode layer, and the electron transfer layer is formed
Between the conversion layer and the lower electrode layer.
7. the preparation method of flat-panel detector structure according to claim 6, which is characterized in that form the electron-transport
The mode of layer includes any one in blade coating, squash type slot coated, inkjet printing and silk-screen printing；The hole is formed to pass
The mode of defeated layer includes any one in blade coating, squash type slot coated, inkjet printing and silk-screen printing.
8. the preparation method of flat-panel detector structure according to claim 6, which is characterized in that the hole transmission layer
Material includes Se and MoO3At least one of, the material of the electron transfer layer includes TiO2And at least one of AZO.
9. the preparation method of flat-panel detector structure according to claim 6, which is characterized in that the boundary layer includes institute
Hole transmission layer is stated, the material of the upper electrode layer includes at least one of Ag, Al and Mo.
10. a kind of flat-panel detector structure characterized by comprising
Substrate；
Lower electrode layer is formed in the substrate；
Conversion layer is formed on the lower electrode layer, wherein the conversion layer includes lead-containing materials layer, the lead-containing materials layer
In include lead-containing compounds；And
Upper electrode layer is formed on the conversion layer.
11. flat-panel detector structure according to claim 10, which is characterized in that the lead-containing compounds include PbO,
PbO2、Pb3O4、Pb12O19、PbI2、PbBr2、PbF2, at least one of PbS, PbSe and PbTe.
12. flat-panel detector structure according to claim 10, which is characterized in that the substrate includes substrate and is located at
Transistor function layer on the substrate, wherein the transistor function layer includes transistor source, the transistor source with
The lower electrode layer electrical connection.
13. flat-panel detector structure described in any one of 0-12 according to claim 1, which is characterized in that the plate is visited
Surveying device structure further includes boundary layer, and the boundary layer includes at least one of hole transmission layer and electron transfer layer, wherein institute
Hole transmission layer is stated between the conversion layer and the upper electrode layer, the electron transfer layer is located at the conversion layer and institute
It states between lower electrode layer.
14. flat-panel detector structure according to claim 13, which is characterized in that the material of the hole transmission layer includes
Se and MoO3At least one of, the material of the electron transfer layer includes TiO2And at least one of AZO.
15. flat-panel detector structure according to claim 13, which is characterized in that the boundary layer includes hole transport
Layer, the material of the upper electrode layer includes at least one of Ag, Al and Mo.
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| CN111312902A (en) * | 2020-02-27 | 2020-06-19 | 上海奕瑞光电子科技股份有限公司 | Flat panel detector structure and preparation method thereof |
| CN111883550A (en) * | 2020-08-10 | 2020-11-03 | 上海大学 | Flat panel detector |
| CN112490334A (en) * | 2020-11-06 | 2021-03-12 | 奕瑞影像科技（太仓）有限公司 | Manufacturing method of X-ray flat panel detector and X-ray flat panel detector |
| CN114252031A (en) * | 2021-11-19 | 2022-03-29 | 中国科学院深圳先进技术研究院 | Direct X-ray image detector and preparation method thereof |
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| CN111883550B (en) * | 2020-08-10 | 2022-07-01 | 上海大学 | Flat panel detector |
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| CN114252031A (en) * | 2021-11-19 | 2022-03-29 | 中国科学院深圳先进技术研究院 | Direct X-ray image detector and preparation method thereof |
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