CN109579983B - Light beam sampler for measuring light intensity distribution parameter of high-energy laser - Google Patents
Light beam sampler for measuring light intensity distribution parameter of high-energy laser Download PDFInfo
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- CN109579983B CN109579983B CN201811614441.5A CN201811614441A CN109579983B CN 109579983 B CN109579983 B CN 109579983B CN 201811614441 A CN201811614441 A CN 201811614441A CN 109579983 B CN109579983 B CN 109579983B
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- 230000005540 biological transmission Effects 0.000 claims abstract description 32
- 238000002310 reflectometry Methods 0.000 claims abstract description 12
- 238000000265 homogenisation Methods 0.000 claims abstract description 8
- 230000035515 penetration Effects 0.000 claims abstract description 5
- 238000005259 measurement Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- 238000005070 sampling Methods 0.000 abstract description 14
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0418—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using attenuators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Optical Measuring Cells (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to a light beam sampler for measuring light intensity distribution parameters of high-energy laser.A front panel and a bottom plate are provided with a plurality of attenuator units which are arranged in an area array; the attenuator unit comprises an embedded perforation, an attenuation cavity and an emergent hole which are coaxially arranged; the incident hole and the attenuation cavity are arranged on the front panel, and the emergent hole is arranged on the bottom plate; a transmission body is fixed at one end of the interior of the attenuation cavity, which is close to the emergent hole; a diffuse reflection film with high reflectivity to laser is arranged at the position, opposite to the penetration hole, of the middle part of the front surface of the transmission body; the incident laser beam is subjected to diffuse reflection by the diffuse reflection film, is subjected to multiple times of diffuse reflection homogenization in the inner cavity of the attenuation cavity and transmission of the transmission body, and then is emitted through the emergent hole; the entrance hole is an inverted cone hole, and the aperture gradually increases from the light-facing surface to the inner cavity of the attenuation cavity. The laser beam sampling and measuring device realizes laser beam sampling and measuring with high spatial distribution, and solves the problems that the traditional integrating sphere has larger spatial dimension and can not realize laser parameter measuring with high spatial resolution when being arranged into a two-dimensional array.
Description
Technical Field
The invention belongs to the technical field of laser parameter testing, relates to a high-energy laser beam sampler, and particularly relates to an attenuation sampler for measuring high-energy laser light intensity space-time distribution parameters.
Background
In the high-energy laser parameter measurement, the light intensity space-time distribution of laser needs to be obtained, and the array type photoelectric target spot meter is a common measurement means, and the power density space-time distribution measurement is realized by arranging photoelectric detectors in area array distribution on a target plate.
The power density of the laser to be measured is high, and the measurement threshold of the photoelectric detector is limited, so that the photoelectric detector array distributed in an area array can be used for detecting only by performing large-multiple optical attenuation, and in addition, in order to accurately measure the spatial distribution parameters of the laser, the arrangement of the detector is required to be as compact as possible, and the spatial resolution of the measurement is improved.
The optical attenuation methods commonly used at present mainly include a filter attenuation method and an integrating sphere attenuation method, i.e. a light attenuator is added in front of each detector to attenuate the power of laser light to the detectable range of the detector. The attenuation coefficient of the optical filter is difficult to calibrate accurately when the optical filter is attenuated by a large factor, the calibrated power meter has higher requirement, and the attenuation coefficients are inconsistent when the incident angle of laser changes, so that the calibration difficulty is increased.
The patent ZL201110231864.0 reports a high-energy laser semi-integrating sphere array attenuator, the laser attenuation is realized by combining a large-angle sampling taper hole with a semi-integrating sphere, and laser is emitted from a laser emitting hole after being absorbed and diffused by a semi-integrating sphere cavity, so that the great attenuation of the laser power density is realized. The attenuator with the integrating sphere structure has the disadvantages that because the integrating sphere attenuator is of an asymmetric structure, the incident hole and the exit hole are positioned on two sides of the integrating sphere, when laser is obliquely incident, large-angle laser attenuation can be realized only when the attenuator and the laser are positioned at a specific position included angle, and the attenuator is spherical or hemispherical, is not compact in structure and is difficult to meet the attenuation requirement during high-spatial resolution array detection.
Granted patent ZL 201410279528.7 discloses an attenuation sampling device of big angle incidence high energy laser, including sample straight hole, exit aperture and cylinder cavity, the cylinder cavity intussuseption is filled with granular optical body scattering material, big angle attenuation sampling when can realizing laser oblique incidence, but the problem that exists is that the density that appears filling when filling optical body scattering material for the cavity is inconsistent, and the attenuation coefficient that leads to different attenuators on the same measurement target board differs greatly, has influenced laser measurement's uniformity.
Disclosure of Invention
The invention provides a light beam sampler for measuring the light intensity distribution parameters of high-energy laser, wherein the light-facing surface of a target plate is plated with a high-reflection film, and the laser is sampled by adopting an inverted taper hole and a discrete attenuation unit, so that the sampling and measurement of the laser beam with high spatial distribution are realized.
The technical scheme of the invention is to provide a light beam sampler for measuring the light intensity distribution parameters of high-energy laser, which is characterized in that: comprises a front panel and a bottom panel which are fixedly connected into a whole;
the front panel and the bottom plate are provided with a plurality of attenuator units which are arranged in an area array;
the attenuator unit comprises an embedded perforation, an attenuation cavity and an emergent hole which are coaxially arranged; the incident hole and the attenuation cavity are arranged on the front panel, and the emergent hole is arranged on the bottom plate;
a transmission body is fixed at one end of the interior of the attenuation cavity, which is close to the emergent hole, and the transmission body is highly transmissive to laser; a diffuse reflection film with high reflectivity to laser is arranged at the position, opposite to the penetration hole, of the middle part of the front surface of the transmission body, so that an annular light transmission window is formed on the front surface of the transmission body;
the inner cavity of the attenuation cavity is subjected to diffuse reflection surface treatment;
the incident laser beam is subjected to diffuse reflection by the diffuse reflection film, is subjected to multiple times of diffuse reflection homogenization in the inner cavity of the attenuation cavity and transmission of the transmission body, and then is emitted through the emergent hole; the penetration hole is an inverted cone hole, and the aperture gradually increases from the light-facing surface to the inner cavity of the attenuation cavity.
Furthermore, the light-facing surface of the front panel is a mirror surface and is plated with a laser high-reflection film.
Furthermore, a plurality of detector mounting holes are formed in the bottom plate, and a step hole structure coaxial with the emergent hole is formed.
Further, the transmission body is made of white gem or quartz glass.
Further, the diffuse reflection film is plated at the center position of the front surface of the transmission body.
Further, the transmission body is fixed in the inner cavity of the attenuation cavity in an adhesion mode.
Further, the cone angle of the inverted cone hole is 30-120 degrees.
Further, the taper angle of the inverted taper hole is 90 °.
Further, the laser high reflection film is a gold film or a silver film.
The invention has the beneficial technical effects that:
1. the attenuator structure provided by the invention is compact in structure, realizes large-time homogenization attenuation of laser by combining a straight-hole diffuse reflection inner cavity with a diffuse reflection film, and overcomes the defects that the traditional integrating sphere has large space size and cannot realize laser parameter measurement with high spatial resolution when being arranged into a two-dimensional array.
2. The invention provides a reverse taper hole sampling structure, which combines a method for polishing and plating a mirror surface high reflection film on a light-facing surface of a front panel of an attenuator, and simultaneously realizes large-angle sampling and strong light protection of the attenuator, so that the attenuator can be used for testing high-energy laser parameters. The defect that the surface of the sampling taper hole is difficult to polish and plate a mirror surface high-reflection film and is easily damaged by strong light during sampling of the positive taper hole is overcome.
Drawings
FIG. 1 is a schematic diagram of the structural layout of the high-energy laser beam sampler of the present invention;
FIG. 2 is a schematic structural diagram of the high-energy laser beam homogenization attenuator of the present invention;
FIG. 3 is a schematic diagram illustrating the attenuation and homogenization principle of the high-energy laser beam homogenization attenuator of the present invention;
FIG. 4 is a schematic view of the position of the diffuse reflection film according to the present invention;
FIG. 5 is a schematic diagram of attenuator light escape using ray tracing software simulation;
the reference signs are: 1. a light-facing surface; 2. an attenuation chamber; 3. a transmissive body; 4. a diffuse reflection film; 5. a base plate; 6. chamfering holes; 7. an exit aperture; 8. a laser beam; 9. a detector mounting hole; 10. a detector; 11. glue joint points; 12. a front panel.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
As shown in fig. 1, the beam sampler for measuring the light intensity distribution parameters of high-energy laser comprises a front panel 12 and a bottom panel 5 which are fixedly connected into a whole, and a plurality of attenuator units which are arranged in an area array in m rows and n columns, wherein each attenuator unit corresponds to one photoelectric detector, the power density of the high-energy laser is attenuated to be within the linear threshold of the photoelectric detector, and the power density space-time distribution parameters of the high-energy laser can be obtained by measuring the time signals of the m rows and n columns of photoelectric detectors.
As shown in fig. 2-5, the laser beam homogenization attenuator unit of the invention comprises an embedding perforation 6, an attenuation cavity 2 and an exit hole 7 which are coaxially arranged, the incidence hole 6 and the attenuation cavity 2 are arranged on a front panel 12, the exit hole 7 is arranged on a bottom plate 5, the attenuation cavity 2 is a cavity, a transmission body 3 is fixed at one end of the interior close to the exit hole 7, the transmission body 3 is made of white gem or quartz glass, and has high transmission rate of the measured laser, which is greater than 98%; the diffuse reflection film 4 with high reflectivity to laser is arranged at the position of the middle part of the front surface of the transmitter 3, which is opposite to the penetration hole 6, so that an annular light transmission window as shown in fig. 4 is formed on the front surface of the transmitter 3. In fig. 4, the diameter of the diffuse reflection film 4 is a, and the diameter of the front surface of the transmitter 3 is b.
Generally, the substrate position of the surface to be coated is roughened to become a rough surface, then a metal reflecting film is evaporated on the roughened substrate, and other positions are shielded in the coating. The metal diffuse reflection film has certain reflectivity (generally more than 90%) to incident laser on one hand, avoids damage of the film layer under strong light, and forms a diffuse reflection surface on the other hand, so that diffuse reflection of the laser after the laser is incident to the diffuse reflection surface is ensured. The inner cavity of the attenuation cavity 2 is also subjected to diffuse reflection surface treatment, the attenuation cavity 2 can be made of graphite or aluminum or copper, and the diffuse reflection inner surface can be formed through sand blasting treatment.
The attenuation cavity 2 is processed in the front panel 12, a plurality of attenuation cavities 2 can be processed on the front panel 12, the bottom plate 5 and the front panel 12 are fixedly connected through positioning pins, so that the emergent holes 7 and the incident holes 6 are in one-to-one correspondence to form a two-dimensional planar array attenuator unit structure, a plurality of detector mounting holes 9 are arranged on the bottom plate 5 and form a coaxial stepped hole structure with the emergent holes 7, and accurate positioning of detectors is realized.
In order to resist long-time irradiation of high-energy laser, the front panel 12 is required to have a very high laser irradiation resistance threshold, so the light facing surface 1 of the front panel 12 is polished to be a mirror surface and then is plated with a laser reflection film, usually a gold film or a silver film, the reflectivity of the laser is more than 98%, meanwhile, the incident hole 6 is processed to be an inverted cone hole, the aperture of the light facing surface 1 is smaller than that of the inside, the surface of the inverted cone hole is polished, and the laser irradiation resistance is improved.
The purpose of the inverted taper hole is to withstand intense light irradiation. In the previous design, the incident holes 6 are all right taper holes, when laser is obliquely incident to the front panel of the target spot instrument, the laser can be incident on the hole walls of the sampling holes, and therefore ablation of the sampling holes is caused. Even if the hole wall of the right taper hole is polished in the original system, the taper hole is difficult to polish and poor in effect, and the whole surface polishing and film coating can not be carried out on the light-facing surface of the front panel, so that the reflectivity of the hole wall can only reach about 90% of the average reflectivity, and the hole wall is easily damaged by incident high-energy laser. The incident hole 6 is processed into the inverted cone hole, even if the average reflectivity of the hole wall is not high, due to the structural characteristics, the normal incidence laser and the oblique incidence laser cannot damage the hole wall, and the laser irradiation tolerance of the measuring system is improved. The cone angle of the inverted cone hole is 30-120 degrees, preferably 90 degrees, and the parameters of the cone angle are mainly determined according to the maximum oblique incidence angle in the field laser test.
As shown in fig. 5, the incident laser 8 is diffused and reflected by the diffusion reflection film 4, then diffused and homogenized for many times in the cavity of the attenuation cavity 2, and transmitted by the transmission body 3, and then emitted through the exit hole 7, so that the large-multiple attenuation of the laser power density is realized. In addition, in order to realize the attenuation of the large-angle oblique incidence laser beam 8, a 45-degree chamfer hole 6 is formed in the light receiving surface of the incidence hole 6, and the large-angle oblique incidence laser beam attenuation sampling device is suitable for parameter measurement and attenuation sampling of the large-angle oblique incidence laser beam.
In the invention, the incident hole 6, the attenuation cavity 2, the diffuse reflection film 4 and the emergent hole 7 are coaxially arranged, and the position precision needs to be ensured in the processing. The size of the diffuse reflection film 4 is larger than the diameter of the incident hole 6, so that the laser can be incident on the diffuse reflection film 4 to form diffuse reflection even when the laser is obliquely incident. The transmission body 3 is adhered to the fixed bottom plate 5 by gluing, wherein 11 is a glue joint.
The parameters of the specific implementation of the invention are as follows: the diameter of the incident hole is 1mm, the diameter of the attenuation cavity is 3.1mm, the length L of the cavity is 5mm, the diameter a of the diffuse reflection film is 2mm, the surface diameter b of the transmission body is 3mm, the length of the transmission body is 3mm, the reflectivity coefficient of the inner cavity is 80%, and the reflectivity coefficient of the diffuse reflection film is 95%, so that the effect that the reflectivity coefficient is more than 10% is realized3Double the laser power density attenuation.
Claims (9)
1. A beam sampler for high energy laser light intensity distribution parameter measurement, its characterized in that: comprises a front panel (12) and a bottom plate (5) which are fixedly connected into a whole;
a plurality of attenuator units which are arranged in an area array are arranged on the front panel (12) and the bottom plate (5);
the attenuator unit comprises an embedding perforation (6), an attenuation cavity (2) and an emergent hole (7) which are coaxially arranged; the incident hole (6) and the attenuation cavity (2) are arranged on the front panel (12), and the exit hole (7) is arranged on the bottom plate (5);
a transmission body (3) is fixed at one end of the interior of the attenuation cavity (2) close to the emergent hole (7), and the transmission body (3) is highly transmissive to laser; a diffuse reflection film (4) with high reflectivity to laser is arranged at the position, opposite to the penetration hole (6), of the middle part of the front surface of the transmission body (3), so that an annular light transmission window is formed on the front surface of the transmission body (3);
the inner cavity of the attenuation cavity (2) is subjected to diffuse reflection surface treatment;
the incident laser beam (8) is subjected to diffuse reflection by the diffuse reflection film (4), multiple times of diffuse reflection homogenization of the inner cavity of the attenuation cavity (2) and transmission of the transmission body (3), and then is emitted out through the emergent hole (7); the entry hole (6) is an inverted cone hole, and the aperture of the inner cavity from the light facing surface (1) to the attenuation cavity (2) is gradually increased.
2. The beam sampler for measuring the light intensity distribution parameters of the high-energy laser according to claim 1, wherein: the light facing surface (1) of the front panel (12) is a mirror surface and is plated with a laser high-reflection film.
3. The beam sampler for measuring the intensity distribution parameters of the high-energy laser according to claim 2, wherein: the bottom plate (5) is provided with a plurality of detector mounting holes (9) which are in a coaxial step hole structure with the emergent hole (7).
4. The beam sampler for measuring the light intensity distribution parameters of the high-energy laser according to claim 1, wherein: the transmission body (3) is made of white gem or quartz glass.
5. The beam sampler for measuring the light intensity distribution parameters of the high-energy laser according to claim 1, wherein: the diffuse reflection film (4) is plated at the center of the front surface of the transmission body (3).
6. The beam sampler for measuring the light intensity distribution parameters of the high-energy laser according to claim 1, wherein: the transmission body (3) is fixedly bonded with the inner cavity of the attenuation cavity (2).
7. The beam sampler for measuring the intensity distribution parameters of the high-energy laser according to claim 2, wherein: the cone angle of the inverted cone hole is 30-120 degrees.
8. The beam sampler for measuring the intensity distribution parameters of the high-energy laser according to claim 7, wherein: the cone angle of the inverted cone hole is 90 degrees.
9. The beam sampler for measuring the intensity distribution parameters of the high-energy laser according to claim 2, wherein: the laser high reflection film is a gold film or a silver film.
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