CN109560169A - A kind of high-performance optical anode material TiO2/g-C3N4The preparation method of photoelectricity very thin films - Google Patents
A kind of high-performance optical anode material TiO2/g-C3N4The preparation method of photoelectricity very thin films Download PDFInfo
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 239000010405 anode material Substances 0.000 title claims abstract description 17
- 230000005622 photoelectricity Effects 0.000 title abstract description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000843 powder Substances 0.000 claims abstract description 30
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000001652 electrophoretic deposition Methods 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000725 suspension Substances 0.000 claims description 14
- 238000002604 ultrasonography Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 9
- 239000002131 composite material Substances 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract description 4
- 230000005518 electrochemistry Effects 0.000 abstract description 3
- 230000003197 catalytic effect Effects 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- 230000001699 photocatalysis Effects 0.000 abstract description 2
- 238000007146 photocatalysis Methods 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- -1 cyanogen Amine Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000157 electrochemical-induced impedance spectroscopy Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N glycolonitrile Natural products N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001453 impedance spectrum Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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Abstract
The present invention relates to a kind of optical electro-chemistry to decompose water optical anode material and optoelectronic pole technical field of film preparation.Disclose a kind of high-performance optical anode material TiO2/g‑C3N4The preparation method of photoelectricity very thin films.By TiO2Powder and g-C3N4Powder is added in aqueous acetone solution, is handled using ultrasonic method and obtains TiO with the method for electrophoretic deposition2/g‑C3N4Photoelectricity very thin films.TiO2And g-C3N4Good level-density parameter is to prepare TiO2/g‑C3N4It is co-deposited the key of material, obtained TiO2/g‑C3N4Being co-deposited material improves g-C3N4The problem of transmission efficiency is low for photo-generated carrier, nano material is easy to reunite, photocatalysis performance is differed farther out from theoretical efficiency, has selected TiO2With g-C3N4Composite construction is formed, compared with other composite constructions, in addition to promoting separation of charge efficiency, also greatly enhances the catalytic capability of electrode simultaneously, and preparation method is simple.
Description
Technical field
The invention belongs to PhotoelectrochemicalTechnique Technique fields, and in particular to a kind of high-performance optical anode material TiO2/g-C3N4Photoelectricity
The preparation method of very thin films.
Background technique
Currently, environmental pollution and energy shortage are two hang-ups of facing mankind, the sustainable development of the mankind is seriously threatened
Exhibition.As environmental problem and energy problem are increasingly serious, current fossil energy is substituted using green clean energy resource to be become not
Carry out one of the trend of energy development.Optical electro-chemistry hydrogen production by water decomposition converts solar energy into storable chemical energy, is 21 century
Solve the main means of environment and energy problem.Semiconductor is made to the light anode of photochemical cell, to divide using sunlight
Xie Shui generates hydrogen and provides new approach.As ideal light anode semiconductor material must be provided simultaneously with suitable band gap,
The features such as conduction band valence-band level, effective carrier transport, good and at low cost stability.However, failing to be managed so far
The optical anode material thought.Therefore, improve the performance of existing semiconductor material, while developing the new light anode with application prospect
New material is imperative.TiO2And g-C3N4Good level-density parameter is to prepare TiO2/g-C3N4It is co-deposited the key of material, gained
The TiO arrived2/g-C3N4Being co-deposited material, property is stablized in aqueous solution, has good photochemical properties, in photocatalytic degradation
There is good effect in pollutant field.In recent years, TiO2/g-C3N4Semiconductor material is in degradable organic pollutant, nitrogen oxides
The fields such as reduction receive the very big concern of researcher, but its photoelectrochemical behaviour as optical anode material is ground
Study carefully almost without.Therefore, it is necessary to study its potential performance.
Summary of the invention
The object of the present invention is to provide a kind of high-performance optical anode material TiO2/g-C3N4The preparation method of photoelectricity very thin films,
By to TiO2And g-C3N4The regulation of two kinds of substance relative amounts prepares TiO2/g-C3N4Photoelectricity very thin films, present invention preparation side
Method is simple and convenient to operate, mild condition, is conducive to large scale preparation.
The technical solution adopted by the present invention are as follows:
A kind of high-performance optical anode material TiO2/g-C3N4Photoelectricity very thin films, preparation method include the following steps:
1) a certain amount of TiO is taken2Powder and g-C3N4Powder is added in aqueous acetone solution, handles 20- using ultrasonic method
60min is uniformly mixed it, obtains suspension.
2) suitable I then is added in the suspension2, obtained solution is continued into ultrasound 1-2h.
3) after ultrasound, TiO is obtained with the method for electrophoretic deposition2/g-C3N4Photoelectricity very thin films.
A kind of TiO2/g-C3N4Photoelectricity very thin films, the g-C3N4Powder can be by melamine, double cyanogen
Amine, the nitrogen-rich organics object such as thiocarbamide urea are that presoma high-temperature process obtains.
A kind of TiO2/g-C3N4Photoelectricity very thin films, step 1) in mass ratio, TiO2:g-C3N4=3-7:7-3.
A kind of TiO2/g-C3N4Photoelectricity very thin films, step 1) by volume, acetone: prepare by water=25:1 ratio
Aqueous acetone solution.
A kind of TiO2/g-C3N4Photoelectricity very thin films contain 0.4mg's in every 1ml aqueous acetone solution in step 2)
I2。
A kind of TiO2/g-C3N4Photoelectricity very thin films, preparation method is specifically, by TiO2Powder and g-C3N4Powder light
Anode material, which is scattered in aqueous acetone solution, uses ultrasonic oscillation, obtains suspension, suitable I is then added in the solution2
Continue ultrasound.And the transparent conducting glass (FTO) of two area equations is parallel to each other leaching face-to-face under constant voltage conditions
Enter in suspension, deposit 1-5min, cuts off electric current, transparent conducting glass is taken out from suspension, after drying at room temperature, in
In tube furnace, is roasted under nitrogen environment, obtain TiO2/g-C3N4Photoelectricity very thin films.
A kind of TiO2/g-C3N4Photoelectricity very thin films, DC voltage 20V-25V.
A kind of TiO2/g-C3N4Photoelectricity very thin films, maturing temperature is 400-500 DEG C in tube furnace, roasting
90min。
The beneficial effects of the present invention are:
TiO2And g-C3N4Good level-density parameter is to prepare TiO2/g-C3N4It is co-deposited the key of material, it is obtained
TiO2/g-C3N4Being co-deposited material improves g-C3N4Transmission efficiency is low for photo-generated carrier, nano material is easy to reunite, photocatalysis performance
The problem of from theoretical efficiency difference farther out, TiO is selected2With g-C3N4Composite construction is formed to remove compared with other composite constructions
Promotion separation of charge efficiency also greatly enhances the catalytic capability of electrode simultaneously, and preparation method is simple.
TiO2/g-C3N4It is a kind of non-metal N type semiconductor, by electrolysis TiO2/g-C3N4In the process, it is applied on anode
With illumination, the TiO with semiconductor property2/g-C3N4Electric conductivity can improve, photohole also promotes anodic oxidation reactions
Progress, obtained photoelectric current is than pure TiO2With pure g-C3N4Photoelectric current it is all big.And preparation method letter of the invention
List facilitates operation, substantially increases TiO2And g-C3N4Photoelectrochemical behaviour, provide new catalysis material for the decomposition of water, have
Beneficial to the research of renewable energy, alleviate the situation of current environmental energy anxiety.
Detailed description of the invention
Fig. 1 is the TiO that electrophoretic deposition obtains in embodiment 32/g-C3N4The SEM image of film and corresponding
Mapping image.
Fig. 2 is the 0%-TiO obtained after electrophoretic deposition roasting in embodiment 22/g-C3N4(pure TiO2), 100%-TiO2/g-
C3N4(pure g-C3N4) and 50%-TiO2/g-C3N4The SEM of film schemes；Wherein, a:0%-TiO2/g-C3N4(pureTiO2)；b:
100%-TiO2/g-C3N4(pureg-C3N4)；C:50%-TiO2/g-C3N4。
Fig. 3 a is the 0%-TiO obtained after electrophoretic deposition roasting in embodiment 1-32/g-C3N4, 30%-TiO2/g-C3N4With
50%-TiO2/g-C3N4The comparison diagram of the photoelectric current of film.
Fig. 3 b is the 70%-TiO obtained after electrophoretic deposition roasting in embodiment 4-52/g-C3N4And 100%-TiO2/g-
C3N4The comparison diagram of the photoelectric current of film.
Fig. 4 is the 0%-TiO obtained after electrophoretic deposition roasting in embodiment 1-52/g-C3N4, 30%-TiO2/g-C3N4、
50%-TiO2/g-C3N4, 70%-TiO2/g-C3N4And 100%-TiO2/g-C3N4The comparison diagram of the impedance spectrum of film.
Fig. 5 is 0%-TiO in embodiment2/g-C3N4, 50%-TiO2/g-C3N4And 50%-TiO2/g-C3N4The amount of film
Sub- efficiency chart.
Specific embodiment
A kind of high-performance optical anode material TiO2/g-C3N4Photoelectricity very thin films
1) TiO is taken2Powder and g-C3N4Powder two powder is added in aqueous acetone solution, according to mass ratio using ultrasound
Method handles 30min, is uniformly mixed it, obtains suspension；
2) suitable I is then added in the suspension2, continue ultrasound 60min.
3) after ultrasound, TiO is obtained with the method for electrophoretic deposition2/g-C3N4Photoelectricity very thin films.
TiO2Powder and g-C3N4Powder, according to g-C3N4Powder be added quality account for two total powder qualities 0%, 30%,
50%, 70%, 100% ratio, label gained target product photoelectricity very thin films are 0%-TiO respectively2/g-C3N4Photoelectricity is very thin
Film, 30%-TiO2/g-C3N4Photoelectricity very thin films, 50%-TiO2/g-C3N4Photoelectricity very thin films, 70%-TiO2/g-C3N4Optoelectronic pole
Film, 100%-TiO2/g-C3N4Photoelectricity very thin films.
Embodiment 1, preparation 0%-TiO2/g-C3N4Photoelectricity very thin films
1) TiO of 0.6g is taken2The g-C of powder and 0g3N4Powder is scattered in 25ml aqueous acetone solution the (body of water and acetone
Product is than being 1:25), sealing ultrasound 30min is uniformly dispersed to solution, obtains mixed liquor.
2) I of 0.1g is taken2It is scattered in above-mentioned mixed liquor, seals ultrasound 60min, obtain electrophoretic deposition suspension.
3) transparent conducting glass (FTO) of two area equations is parallel to each other face-to-face and immerses electrophoretic deposition suspension
In, and between two electrodes apply 20V DC voltage, deposit 3min；
4) electric current is cut off, transparent conducting glass (FTO) is taken out from suspension, is dried at room temperature, and in pipe
In formula furnace nitrogen environment, in 450 DEG C of roasting 90min, TiO is obtained2/g-C3N4Photoelectricity very thin films are labeled as 0%-TiO2/g-C3N4
Photoelectricity very thin films.
Embodiment 2, preparation 30%-TiO2/g-C3N4Photoelectricity very thin films
Method only changes the step the additional amount of two powder in 1), that is, takes the TiO of 0.42g with embodiment 12Powder and 0.18g
G-C3N4Powder finally obtains TiO2/g-C3N4Photoelectricity very thin films are labeled as 30%-TiO2/g-C3N4Photoelectricity very thin films.
Embodiment 3, preparation 50%-TiO2/g-C3N4Photoelectricity very thin films
Method only changes the step the additional amount of two powder in 1), that is, takes the TiO of 0.3g with embodiment 12Powder and 0.3g's
g-C3N4Powder finally obtains TiO2/g-C3N4Photoelectricity very thin films are labeled as 50%-TiO2/g-C3N4Photoelectricity very thin films.
Embodiment 4, preparation 70%-TiO2/g-C3N4Photoelectricity very thin films
Method only changes the step the additional amount of two powder in 1), that is, takes the TiO of 0.18g with embodiment 12Powder and 0.42g
G-C3N4Powder finally obtains TiO2/g-C3N4Photoelectricity very thin films are labeled as 70%-TiO2/g-C3N4Photoelectricity very thin films.
Embodiment 5, preparation 100%-TiO2/g-C3N4Photoelectricity very thin films
Method only changes the step the additional amount of two powder in 1), that is, takes the TiO of 0g with embodiment 12The g- of powder and 0.6g
C3N4Powder finally obtains TiO2/g-C3N4Photoelectricity very thin films are labeled as 100%-TiO2/g-C3N4Photoelectricity very thin films.
Detection
The 50%-TiO that embodiment 3 is obtained2/g-C3N4Photoelectricity very thin films are scanned Electronic Speculum test, as a result such as Fig. 1 institute
Show, as seen from Figure 1,50%-TiO2/g-C3N4The SEM image of film and corresponding mapping image can see and wherein contain
There are tetra- kinds of elements of C, N, O, Ti.
The 0%-TiO that embodiment is obtained2/g-C3N4(pure TiO2), 50%-TiO2/g-C3N4And 100%-TiO2/g-
C3N4(pure g-C3N4) three samples carry out photoelectricity current test, as a result as shown in Fig. 2, from Figure 2 it can be seen that 0%-TiO2/g-C3N4Sample
Product are a:pureTiO2SEM figure show the TiO of very little2Particle, 100%-TiO2/g-C3N4Sample is b:pureg-
C3N4SEM figure show very big g-C3N4Particle c:50%-TiO2/g-C3N4SEM figure show short grained TiO2Big
The g-C of grain3N4It is attached to each other together.
Application examples, TiO2/g-C3N4The application of photoelectricity very thin films
The 0%-TiO respectively prepared by embodiment 1-52/g-C3N4, 30%-TiO2/g-C3N4, 50%-TiO2/g-C3N4、
70%-TiO2/g-C3N4And 100%-TiO2/g-C3N4Photoelectricity very thin films carry out the light of photoelectric current, impedance and quantum efficiency etc.
Electrochemical property test.
All electrochemistry experiment test process are all in the electrochemical workstation of three-electrode system (Princeton Applied
Research2273 it is carried out in).The sample thin film of embodiment preparation is as working electrode, and platinized platinum is to electrode, and Ag/AgCl is ginseng
Than electrode, electrolyte is 0.5M sodium sulphate, and sample photoirradiated surface product is 1cm2。
Photoelectricity current test: light source is 300W xenon lamp, and bias is 1.18V vs.VRHE, result is measured as shown in figure 3, result is aobvious
Show, different quality compares the influence of photoelectric current, as the result is shown 50%-TiO2/g-C3N4Photoelectric current it is relatively large.
Electrochemical impedance spectroscopy (EIS) test: fixed voltage is 0V vs.Voc, frequency range is 0.1~105Hz.It measures
As a result as shown in figure 4, the impedance value of test is identical as the photocurrent values with concentration, illustrate the impedance value of 50%-TiO2/g-C3N4
It is minimum.
Quantum efficiency (IPCE) test: choose multiple wavelength (365nm, 380nm, 390nm, 410nm, 420nm, 430nm,
450nm, 460nm, 490nm, 520nm) monochromatic light exposure sample, measure its bias be 1.18V vs.VRHEWhen photoelectricity
Stream.Utilize formula:
Wherein, I is density of photocurrent (unit: mA), and λ is incident monochromatic wavelength (nm), P be incident intensity (unit:
mW).By the way that the value of quantum efficiency is calculated, as a result as shown in figure 5,0%-TiO2/g-C3N4, 50%-TiO2/g-C3N4With
100%-TiO2/g-C3N4In the case where wavelength is the relatively other wavelength monochromatic light exposures of quantum efficiency under 365nm monochromatic light exposure
Quantum efficiency it is higher, and 50%-TiO in three2/g-C3N4Quantum efficiency value in the case where wavelength is 365nm monochromatic light exposure is most
It is high.
Claims (8)
1. a kind of high-performance optical anode material TiO2/g-C3N4Photoelectricity very thin films, which is characterized in that preparation method includes following step
It is rapid:
1) by TiO2Powder and g-C3N4Powder is added in aqueous acetone solution, handles 20-60min using ultrasonic method, keeps its mixing equal
It is even, obtain suspension；
2) I then is added in the suspension2, obtained solution is continued into ultrasound 1-2h；
3) after ultrasound, TiO is obtained with the method for electrophoretic deposition2/g-C3N4Photoelectricity very thin films.
2. a kind of high-performance optical anode material TiO according to claim 12/g-C3N4Photoelectricity very thin films, which is characterized in that
Step 1) in mass ratio, TiO2:g-C3N4=3-7:7-3.
3. a kind of high-performance optical anode material TiO according to claim 12/g-C3N4Photoelectricity very thin films, which is characterized in that
By volume, acetone: water=25:1 ratio prepares aqueous acetone solution to step 1).
4. a kind of high-performance optical anode material TiO according to claim 12/g-C3N4Photoelectricity very thin films, which is characterized in that
I containing 0.4mg in every 1ml aqueous acetone solution in step 2)2。
5. a kind of high-performance optical anode material TiO according to claim 12/g-C3N4Photoelectricity very thin films, which is characterized in that
Step 3) under constant voltage conditions mutually puts down the transparent conducting glass of two area equations specifically, after ultrasound face-to-face
Row immerses in suspension, deposits 1-5min, cuts off electric current, transparent conducting glass is taken out from suspension, is dried at room temperature
Afterwards, it in tube furnace, is roasted under nitrogen environment, obtains TiO2/g-C3N4Photoelectricity very thin films.
6. a kind of high-performance optical anode material TiO according to claim 62/g-C3N4Photoelectricity very thin films, which is characterized in that
The electro-conductive glass is FTO.
7. a kind of TiO according to claim 62/g-C3N4Photoelectricity very thin films, it is characterised in that: DC voltage 20V-
25V。
8. a kind of TiO according to claim 62/g-C3N4Photoelectricity very thin films, it is characterised in that: in tubular type kiln roasting temperature
Degree is 400-500 DEG C, roasts 90min.
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| CN110706933A (en) * | 2019-11-11 | 2020-01-17 | 厦门大学 | Preparation method of titanium dioxide nanorod composite photoanode |
| CN111167500A (en) * | 2020-02-02 | 2020-05-19 | 辽宁大学 | Ag/g-C3N4Composite film and preparation method and application thereof |
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| CN106807601A (en) * | 2017-03-13 | 2017-06-09 | 中国科学院海洋研究所 | A kind of method for preparing semiconductor powder film photoelectric electrode |
| CN107130256A (en) * | 2017-04-07 | 2017-09-05 | 黄河科技学院 | Boron doping carbonitride modified titanic oxide complex light electrode and preparation method thereof, application |
| CN107994120A (en) * | 2017-11-22 | 2018-05-04 | 辽宁大学 | Sn2Nb2O7Light anode material and Sn2Nb2O7Photoelectricity very thin films |
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| CN111167500A (en) * | 2020-02-02 | 2020-05-19 | 辽宁大学 | Ag/g-C3N4Composite film and preparation method and application thereof |
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