CN109560164A - 一种宽谱辐射探测器吸收层的制备方法 - Google Patents
一种宽谱辐射探测器吸收层的制备方法 Download PDFInfo
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- 230000005855 radiation Effects 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 53
- 238000009413 insulation Methods 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000005485 electric heating Methods 0.000 claims abstract description 18
- 239000006096 absorbing agent Substances 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 238000001035 drying Methods 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 11
- 238000002310 reflectometry Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229940067573 brown iron oxide Drugs 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000002048 multi walled nanotube Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 230000007480 spreading Effects 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000005439 thermosphere Substances 0.000 claims description 2
- 229920002521 macromolecule Polymers 0.000 claims 2
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 5
- 229920001940 conductive polymer Polymers 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000002861 polymer material Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 10
- 238000011161 development Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011358 absorbing material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007592 spray painting technique Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112420852A (zh) * | 2020-11-28 | 2021-02-26 | 郑州大学 | 一种二维材料光探测器及其制备方法 |
CN113333257A (zh) * | 2021-06-09 | 2021-09-03 | 中国电子科技集团公司第四十一研究所 | 一种太赫兹黑体辐射面制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102226719A (zh) * | 2011-04-08 | 2011-10-26 | 华中科技大学 | 红外吸收结构及基于该结构的非致冷红外探测器 |
CN103191857A (zh) * | 2013-04-08 | 2013-07-10 | 中国计量科学研究院 | 在太赫兹波段具有宽带高吸收率涂层的制备方法 |
CN106197688A (zh) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | 一种热释电红外探测器 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102226719A (zh) * | 2011-04-08 | 2011-10-26 | 华中科技大学 | 红外吸收结构及基于该结构的非致冷红外探测器 |
CN103191857A (zh) * | 2013-04-08 | 2013-07-10 | 中国计量科学研究院 | 在太赫兹波段具有宽带高吸收率涂层的制备方法 |
CN106197688A (zh) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | 一种热释电红外探测器 |
Non-Patent Citations (1)
Title |
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李敏: "基于石墨烯纳米结构的太赫兹探测器关键技术研究", 《重庆大学硕士学位论文》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112420852A (zh) * | 2020-11-28 | 2021-02-26 | 郑州大学 | 一种二维材料光探测器及其制备方法 |
CN112420852B (zh) * | 2020-11-28 | 2022-07-01 | 郑州大学 | 一种二维材料光探测器及其制备方法 |
CN113333257A (zh) * | 2021-06-09 | 2021-09-03 | 中国电子科技集团公司第四十一研究所 | 一种太赫兹黑体辐射面制备方法 |
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