CN109560148A - A kind of nano generator and preparation method based on nano structure membrane electrode - Google Patents
A kind of nano generator and preparation method based on nano structure membrane electrode Download PDFInfo
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- CN109560148A CN109560148A CN201811314230.XA CN201811314230A CN109560148A CN 109560148 A CN109560148 A CN 109560148A CN 201811314230 A CN201811314230 A CN 201811314230A CN 109560148 A CN109560148 A CN 109560148A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 239000012528 membrane Substances 0.000 title claims abstract description 22
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 210
- 239000011787 zinc oxide Substances 0.000 claims abstract description 105
- 239000010410 layer Substances 0.000 claims abstract description 103
- 229960001296 zinc oxide Drugs 0.000 claims abstract description 86
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 78
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 76
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims abstract description 40
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000011241 protective layer Substances 0.000 claims abstract description 34
- 229940112669 cuprous oxide Drugs 0.000 claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 18
- 241001148715 Lamarckia aurea Species 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 131
- 239000000243 solution Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 239000011521 glass Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 238000001035 drying Methods 0.000 claims description 18
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 11
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 11
- -1 polyethylene Polymers 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 10
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 8
- 229940043237 diethanolamine Drugs 0.000 claims description 8
- 235000019441 ethanol Nutrition 0.000 claims description 8
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229920001155 polypropylene Polymers 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical group [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- 239000003599 detergent Substances 0.000 claims description 5
- 239000004310 lactic acid Substances 0.000 claims description 5
- 235000014655 lactic acid Nutrition 0.000 claims description 5
- 239000004246 zinc acetate Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000032683 aging Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 3
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 3
- 150000004816 dichlorobenzenes Chemical class 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000012266 salt solution Substances 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 150000003752 zinc compounds Chemical class 0.000 claims description 3
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- OSNIIMCBVLBNGS-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-2-(dimethylamino)propan-1-one Chemical compound CN(C)C(C)C(=O)C1=CC=C2OCOC2=C1 OSNIIMCBVLBNGS-UHFFFAOYSA-N 0.000 claims 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 241000212941 Glehnia Species 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- IJRVLVIFMRWJRQ-UHFFFAOYSA-N nitric acid zinc Chemical compound [Zn].O[N+]([O-])=O IJRVLVIFMRWJRQ-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of nano generator and preparation method based on nano structure membrane electrode, the nano generator includes a flexible base board, it has been sequentially prepared from bottom to top on the flexible base board: 1) silver nanowires conductive membrane layer, and constitute by flexible base board/compound hearth electrode of silver nanowires membrane of conducting layer layer；2) zinc oxide films film layer is prepared on the flexible base board/silver nanowires membrane of conducting layer layer；3) zinc-oxide nano column array is prepared on the zinc oxide films film layer, obtains zinc-oxide nano column array flexible；4) cuprous oxide film layer is prepared by intermediate processing on the zinc-oxide nano column array；5) hole transmission layer/active layer protective layer is prepared on the cuprous oxide film layer；6) in the hole transmission layer/active layer protective layer goldentop electrode layer prepared above；7) it is connected between two metal electrodes of hearth electrode and goldentop electrode layer with copper wire.
Description
Technical field
A kind of nano generator preparation method based on nano structure electrode that the present invention relates to a kind of, and in particular to flexible liner
Bottom/silver nanowires/zinc oxide seed layer/zinc-oxide nano column/P3HT/ gold electrode structure nano generator and preparation method,
Belong to nano generator technical field.
Background technique
As the important high and new technology field of 21st century, nano generator is just undergoing unprecedented high speed development
Phase.Current nano generator may include piezoelectric nano generator and friction nanometer power generator.The base of piezoelectric nano generator
It is that piezoelectric potential is generated in nano wire that present principles, which are nano wires in force-extension or compression, and corresponding transient current flows at both ends
It moves to balance fermi level, to produce electricl energy.
The hearth electrode of nano generator generallys use flexible substrates and passes through sputtering or the ito thin film conduct of vacuum deposition preparation
Hearth electrode, flexible ito thin film method preparation is complicated, expensive, and the buckle resistance of ito thin film can be bad, usually bending number
Ito thin film electric property is remarkably decreased after hundred times.
Summary of the invention
Present invention aims to overcome that the shortcomings of the prior art, and a kind of low cost is provided, and it is practical, it is easy to big
The nano generator and preparation method based on nano structure electrode of large-scale production.
The object of the present invention is achieved by the following technical solutions, a kind of nanometer based on nano structure membrane electrode
Generator, it includes a flexible base board, has been sequentially prepared from bottom to top on the flexible base board:
1) silver nanowires conductive membrane layer, and constitute by flexible base board/compound hearth electrode of silver nanowires membrane of conducting layer layer；
2) zinc oxide films film layer is prepared on the flexible base board/silver nanowires membrane of conducting layer layer；
3) zinc-oxide nano column array is prepared on the zinc oxide films film layer, obtains zinc-oxide nano column array flexible；
4) cuprous oxide film layer is prepared by intermediate processing on the zinc-oxide nano column array；
5) hole transmission layer/active layer protective layer is prepared on the cuprous oxide film layer；
6) in the hole transmission layer/active layer protective layer goldentop electrode layer prepared above；
7) it is connected between two metal electrodes of hearth electrode and goldentop electrode layer with copper wire, is welded copper wire by electrocondution slurry,
At epoxy resin welded encapsulation, carrier is connected to after encapsulation, i.e. nanometer generating of the completion based on nano structure membrane electrode
Machine.
As preferred: the flexible base board uses polyethylene (PE), polypropylene (PP), polyethylene terephthalate
(PET), one of polyimides (PI), dimethyl silicone polymer (PDMS) are used as flexible substrate；
The average length of the silver nanowires is 3-200 microns, and silver nanowires average diameter is 20-200 nanometers, and silver nanowires is thin
Film average thickness is 200-2000nm, and the square resistance of silver nanowires film is 20-300 Ω/Sq；
The zinc oxide films film thickness is 15-300nm, and the square resistance of above-mentioned silver nanowires/zinc-oxide film is lower than 30 ohm
Ω/Sq；
For the zinc-oxide nano column altitude range in 500nm-6000nm, zinc-oxide nano column diameter is 50-200 nm, zinc oxide
Nano-array spacing is 50-100nm；
The cuprous oxide film layer or hole transmission layer/active layer protective layer thickness are 10-150nm；
The goldentop electrode layers thickness range is 30-100nm；
The copper wire is soldered to electrode using electrocondution slurry, and electrocondution slurry includes electric silica gel, and conductive carbon paste, conductive silver paste is led
10-30 minutes solidified welding points of 100-150 DEG C of heating can be used after plasma-based material welding electrode.
A kind of preparation method of the nano generator based on nano structure electrode as described above, the preparation method include
Following steps:
(a) it cleans flexible base board: first being cleaned with detergent, then cleaned using EtOH Sonicate, it is finally super using deionized water
Sound cleaning, is finally cleaned with deionized water, and the substrate after drying is maintained in nitrogen environment；
(b) it prepares silver nanowires film (AgNWs): taking the silver nanowires alcohol dispersion liquid of 1-10 mg/ml, flexible base board is placed
On whirler, silver nanowires film is obtained with the method for spin-coating, drying rear film is formed, the silver nanoparticle
Line film thickness is 200-1000nm；
(c) prepare zinc-oxide film (AgNWs/ZnO TF): by zinc compound, diethanol amine and ethyl alcohol mix at 40-100 DEG C
And reacted, ageing forms zinc oxide colloidal sol afterwards for 24 hours, zinc concentration 0.01-1mol/L, the substance of diethanol amine and zinc
Amount is than being 1:1；Above-mentioned film is set on whirler, obtains silver nanowires film/oxidation with the method for spin-coating
Zinc film, drying rear film are formed, and zinc-oxide film thickness range is 10-200nm, above-mentioned silver nanowires/zinc-oxide film
Square resistance be lower than 30 ohm of Ω/Sq；
(d) it preparing zinc-oxide nano column (AgNWs/ZnO TF/ZnO NR): above-mentioned film is placed in a beaker, film is face-down,
Zinc-oxide nano column is obtained by Hydrothermal Growth, i.e. acquisition glass substrate/silver nanowires/zinc-oxide film/zinc-oxide nano
Column, zinc-oxide nano column altitude range is in 500nm-2000nm；
(e) cuprous oxide film (AgNWs/ZnO TF/ZnO NR/Cu2O): electrochemical deposition cuprous oxide first is prepared
(Cu2O): with the cupric salt solution that distilled water configuration concentration is 0.01-0.2 mol/L, the lactic acid of 10 times of mantoquita concentration is added,
PH value is adjusted to 12 with NaOH solution, and above-mentioned solution is sufficiently stirred, obtains electroplate liquid, is existed using permanent potential instrument to above-mentioned film
Electro-deposition is carried out in electroplate liquid, obtains p-type Cu2O；
(f) it prepares hole transmission layer/active layer protective layer: above-mentioned film is set on whirler, with spin-coating
Method prepares hole transmission layer/active layer protective layer, i.e. p-type protective layer, by PEDOT:PSS solution or 2-10 mg/ml
P3HT/ chlorobenzene solution drips on above-mentioned film, forms p-type protective layer by spin-coating, is added after film forming using 150 degrees Celsius
Hot 20 minutes solidification p-type protective layers；
(g) metal or nonmetallic goldentop electrode layer are prepared by the method for silk-screen printing, uses 150 degrees Centigrades 30 after film forming
Minute solidification electrode layer, solidifies rear electrode layer sheet resistance at 30 ohm or less；Or using vacuum methods systems such as vacuum evaporation or sputterings
Standby electrode layer.
As preferred: in the step (c), the zinc source be zinc acetate, one of zinc nitrate or zinc acetylacetonate or
It is a variety of；
In the step (e), the mantoquita is copper acetate, one of copper nitrate or copper sulphate or a variety of；
In the step (f), the p-type protective layer be PEDOT:PSS solution or P3HT, PTB7 polymeric acceptor material, it is above-mentioned
Polymeric acceptor material solution can select one of chlorobenzene or dichloro-benzenes；
In the step (g), the electrode uses aluminum slurry, silver paste or Gold conductor silk-screen printing preparation, and non-gold can also be used
Belong to carbon pastes silk-screen printing preparation；The electrode uses vacuum evaporation, sputtering, the preparation of electron beam evaporation method.
Compared with prior art, the invention has the following advantages that
First is that can be realized secondary effective scattering to light using silver nanowires and zinc-oxide nano rod structure, cuprous oxide is improved
The light absorption of battery；
Second is that using polymer P type conductive material or polymeric acceptor material, can effective protection cuprous oxide not by air
Water oxygen encroached on, cuprous oxide material over time can be made not hydrolyze, realize and extend battery life, while p-type protective layer
Conducive to the transmission of hole in the devices, battery life is protected to improve device performance simultaneously.
Detailed description of the invention
Fig. 1 is structure composition schematic diagram of the invention.
Fig. 2 is preparation flow schematic diagram of the invention.
Specific embodiment
The present invention will be described in detail below with reference to the accompanying drawings: of the present invention a kind of based on nano junction shown in Fig. 1
The nano generator of structure membrane electrode, it includes a flexible base board 1, has been sequentially prepared from bottom to top on the flexible base board 1:
1) silver nanowires conductive membrane layer 2, and constitute by flexible base board/compound hearth electrode of silver nanowires membrane of conducting layer layer；
2) zinc oxide films film layer 3 is prepared on the flexible base board/silver nanowires membrane of conducting layer layer；
3) zinc-oxide nano column array 4 is prepared on the zinc oxide films film layer, obtains zinc-oxide nano column array flexible；
4) cuprous oxide film layer 5 is prepared by intermediate processing on the zinc-oxide nano column array；
5) hole transmission layer/active layer protective layer 6 is prepared on the cuprous oxide film layer；
6) in the hole transmission layer/active layer protective layer goldentop electrode layer 7 prepared above；
7) it is connected between two metal electrodes of hearth electrode and goldentop electrode layer with copper wire, is welded copper wire by electrocondution slurry,
At epoxy resin welded encapsulation, carrier is connected to after encapsulation, i.e. nanometer generating of the completion based on nano structure membrane electrode
Machine.
Flexible base board 1 of the present invention uses polyethylene (PE), polypropylene (PP), polyethylene terephthalate
(PET), one of polyimides (PI), dimethyl silicone polymer (PDMS) are used as flexible substrate；
The average length of the silver nanowires is 3-200 microns, and silver nanowires average diameter is 20-200 nanometers, and silver nanowires is thin
Film average thickness is 200-2000nm, and the square resistance of silver nanowires film is 20-300 Ω/Sq；
The zinc oxide films film thickness is 15-300nm, and the square resistance of above-mentioned silver nanowires/zinc-oxide film is lower than 30 ohm
Ω/Sq；
For the zinc-oxide nano column altitude range in 500nm-6000nm, zinc-oxide nano column diameter is 50-200 nm, zinc oxide
Nano-array spacing is 50-100nm；
The cuprous oxide film layer or hole transmission layer/active layer protective layer thickness are 10-150nm；
The goldentop electrode layers thickness range is 30-100nm；
The copper wire is soldered to electrode using electrocondution slurry, and electrocondution slurry includes electric silica gel, and conductive carbon paste, conductive silver paste is led
10-30 minutes solidified welding points of 100-150 DEG C of heating can be used after plasma-based material welding electrode.
Shown in Fig. 2, a kind of preparation side of the nano generator based on nano structure electrode as described above of the present invention
Method, the preparation method the following steps are included:
(a) it cleans flexible base board 8: first being cleaned with detergent, then cleaned using EtOH Sonicate, it is finally super using deionized water
Sound cleaning, is finally cleaned with deionized water, and the substrate after drying is maintained in nitrogen environment；
(b) it prepares silver nanowires film (AgNWs) 9: taking the silver nanowires alcohol dispersion liquid of 1-10 mg/ml, flexible base board is placed
On whirler, silver nanowires film is obtained with the method for spin-coating, drying rear film is formed, the silver nanoparticle
Line film thickness is 200-1000nm；
(c) prepare zinc-oxide film (AgNWs/ZnO TF) 10: by zinc compound, diethanol amine and ethyl alcohol mix at 40-100 DEG C
Merging is reacted, and ageing forms zinc oxide colloidal sol, zinc concentration 0.01-1mol/L, the substance of diethanol amine and zinc afterwards for 24 hours
Amount ratio be 1:1；Above-mentioned film is set on whirler, obtains silver nanowires film/oxygen with the method for spin-coating
Change zinc film, drying rear film is formed, and zinc-oxide film thickness range is 10-200nm, above-mentioned silver nanowires/zinc oxide films
The square resistance of film is lower than 30 ohm of Ω/Sq；
(d) it prepares zinc-oxide nano column (AgNWs/ZnO TF/ZnO NR) 11: above-mentioned film being placed in a beaker, pellicular front court
Under, zinc-oxide nano column is obtained by Hydrothermal Growth, i.e. acquisition glass substrate/silver nanowires/zinc-oxide film/zinc oxide nano
Meter Zhu, zinc-oxide nano column altitude range is in 500nm-2000nm；
(e) cuprous oxide film (AgNWs/ZnO TF/ZnO NR/Cu2O) 12: electrochemical deposition cuprous oxide first is prepared
(Cu2O): with the cupric salt solution that distilled water configuration concentration is 0.01-0.2 mol/L, the lactic acid of 10 times of mantoquita concentration is added,
PH value is adjusted to 12 with NaOH solution, and above-mentioned solution is sufficiently stirred, obtains electroplate liquid, is existed using permanent potential instrument to above-mentioned film
Electro-deposition is carried out in electroplate liquid, obtains p-type Cu2O；
(f) it prepares hole transmission layer/active layer protective layer 13: above-mentioned film being set on whirler, spin-coating is used
Method prepare hole transmission layer/active layer protective layer, i.e. p-type protective layer, by PEDOT:PSS solution or 2-10 mg/ml
P3HT/ chlorobenzene solution drips on above-mentioned film, forms p-type protective layer by spin-coating, is added after film forming using 150 degrees Celsius
Hot 20 minutes solidification p-type protective layers；
(g) metal or nonmetallic goldentop electrode layer 14 are prepared by the method for silk-screen printing, uses 150 degrees Centigrades after film forming
30 minutes solidification electrode layers solidify rear electrode layer sheet resistance at 30 ohm or less；Or using vacuum methods such as vacuum evaporation or sputterings
Prepare electrode layer.
In the step (c), the zinc source is zinc acetate, one of zinc nitrate or zinc acetylacetonate or a variety of；
In the step (e), the mantoquita is copper acetate, one of copper nitrate or copper sulphate or a variety of；
In the step (f), the p-type protective layer be PEDOT:PSS solution or P3HT, PTB7 polymeric acceptor material, it is above-mentioned
Polymeric acceptor material solution can select one of chlorobenzene or dichloro-benzenes；
In the step (g), the electrode uses aluminum slurry, silver paste or Gold conductor silk-screen printing preparation, and non-gold can also be used
Belong to carbon pastes silk-screen printing preparation；The electrode uses vacuum evaporation, sputtering, the preparation of electron beam evaporation method.
The present invention can also use following specific embodiment:
Embodiment 1:
1) substrate of glass (40mm × 40mm × 1.1mm) first cleaning glass substrate and silver nanowires film preparation: is used into detergent
Cleaning, then be cleaned by ultrasonic 30 minutes with acetone, then it is cleaned by ultrasonic 30 minutes with deionized water, last deionized water is rinsed well
Afterwards, it is put into drying box drying, will be placed on whirler by above-mentioned glass substrate, taking concentration is 6mg/ml silver nanoparticle
For 100 μ l drop of line solution on glass substrate, solution uses 1000 rpm/min speed to rotate 20s after being uniformly distributed, and uses
160 DEG C of 10 min of drying, that is, form glass substrate/silver nanowires film, and silver nanowires film thickness is 200-300 nm.
2) zinc oxide films film preparation: by zinc acetate (0.01mol), diethanol amine (0.01mol) and ethyl alcohol (100 ml) exist
It mixes and is reacted at 60 DEG C, form zinc oxide colloidal sol (100 ml) after being aged 20 h, zinc concentration is 0.1 mol/L.It will
The glass substrate being prepared in step (1)/silver nanowires film is placed on whirler, by the zinc oxide colloidal sol of preparation
100 ul drop of precursor liquid rotates 30s on glass substrate/silver nanowires film, using 2500 rpm/min speed, uses
Dry 10 min of 120 DEG C of ranges of 100Pa vacuum, that is, form glass substrate/silver nanowires/zinc-oxide film, zinc oxide films film thickness
Degree is 60 nm
3) it prepares zinc-oxide nano column: the glass substrate/silver nanowires/zinc-oxide film being prepared in step 2 is placed in spy
Fluorine dragon liner water heating kettle, film is face-down, and zinc nitrate: the deionized water of hexa-methylene time amine (HMT)=1:1 is placed in water heating kettle
Solution, wherein nitric acid zinc concentration is 0.08 mol/L, and water heating kettle is put into air dry oven, 90 DEG C of heating 3h, is taken after natural cooling
Sample out, i.e., acquisition glass substrate/silver nanowires/zinc-oxide film/zinc-oxide nano column, gained zinc-oxide nano column with a thickness of
1800nm。
4) it prepares cuprous oxide film: electrolyte is configured with 200 ml of deionized water, wherein CuSO4 containing 0.4mol, 4mol
The mixed liquor of lactic acid, is added NaOH in mixed solution, and solution pH value is adjusted to 12, is electrolysed to obtain Cu2O using permanent potential instrument,
Using three-electrode electro Chemical system (working electrode, to electrode and reference electrode), with the upper AgNWs/ZnO/ZnO NR prepared
Plural layers are working electrode, and the chemical potential of Cu2O deposition is -0.4 V, are used as using platinum piece to electrode, using Ag/
AgCl is as reference electrode, cuprous (Cu2O) film layer of deposited oxide in configured electrolyte, under 60 DEG C of depositing temperatures
Carry out, sedimentation time 60 minutes, obtain the cuprous oxide film of 2000 nm, clean deposited samples with deionized water, by sample plus
Heat was to 150 degrees Centigrade 30 minutes.
5) it prepares p-type protective layer: above-mentioned plural layers being set on whirler, 100 ul of PEDOT:PSS solution is taken
It drips on above-mentioned film, solution uses 3000 rpm/min speed to rotate 30s after being uniformly distributed, using 150 DEG C of drying 30
Min forms p-type protective layer.
6) prepared by top electrode: by the method metallic silver top electrode of silk-screen printing, 100 ul conductive silver pastes being taken to be placed in
On halftone, sample is placed under halftone, is back and forth hung three times using knife is hung, is taken remaining silver paste away, that is, obtains silver-colored top electrode
Film uses 150 degrees Centigrade, 30 minutes solidification electrodes after film forming, that is, forms the thick silver top electrode of 500 nm,.
Embodiment 2
1) substrate of glass (30mm × 30mm × 1.1mm) first cleaning glass substrate and silver nanowires film preparation: is used into detergent
Cleaning, then be cleaned by ultrasonic 30 minutes with acetone, then it is cleaned by ultrasonic 30 minutes with deionized water, last deionized water is rinsed well
Afterwards, it is put into drying box drying, will be placed on whirler by above-mentioned glass substrate, taking concentration is that 4 mg/ml silver are received
150 μ l drop of rice noodles solution is on glass substrate, and solution uses 800 rpm/min speed to rotate 10s after being uniformly distributed, to thin
Film repeats spin-coating three times after spontaneously drying, and using 160 DEG C of 10 min of drying, that is, forms glass substrate/silver nanowires film,
Silver nanowires film thickness is 200-300 nm.
2) zinc oxide films film preparation: by zinc acetate (0.08mol), diethanol amine (0.08mol) and ethyl alcohol (100 ml) exist
It mixes and is reacted at 60 DEG C, form zinc oxide colloidal sol (100 ml) after being aged 24 h, zinc concentration is 0.08 mol/L.It will
The glass substrate being prepared in step (1)/silver nanowires film is placed on whirler, by the zinc oxide colloidal sol of preparation
200 ul drop of precursor liquid rotates 20s on glass substrate/silver nanowires film, using 2000 rpm/min speed, uses
Dry 10 min of 120 DEG C of ranges of 100Pa vacuum, that is, form glass substrate/silver nanowires/zinc-oxide film, zinc oxide films film thickness
Degree is 40 nm
3) it prepares zinc-oxide nano column: the glass substrate/silver nanowires/zinc-oxide film being prepared in step (2) is placed in
Teflon liner water heating kettle, film is face-down, and zinc nitrate: the deionization of hexa-methylene time amine (HMT)=1:1 is placed in water heating kettle
Aqueous solution, wherein nitric acid zinc concentration is 0.1 mol/L, and water heating kettle is put into air dry oven, 92 DEG C of heating 3h, is taken after natural cooling
Sample out, i.e., acquisition glass substrate/silver nanowires/zinc-oxide film/zinc-oxide nano column, gained zinc-oxide nano column with a thickness of
2300nm。
4) it prepares cuprous oxide film: electrolyte is configured with 200 ml of deionized water, wherein CuSO4 containing 0.4mol, 4mol
The mixed liquor of lactic acid, is added NaOH in mixed solution, and solution pH value is adjusted to 12, is electrolysed to obtain Cu2O using permanent potential instrument,
Using three-electrode electro Chemical system (working electrode, to electrode and reference electrode), with the upper AgNWs/ZnO/ZnO NR prepared
Plural layers are working electrode, and the chemical potential of Cu2O deposition is -0.5 V, are used as using platinum piece to electrode, using Ag/
AgCl is as reference electrode, cuprous (Cu2O) film layer of deposited oxide in configured electrolyte, under 60 DEG C of depositing temperatures
Carry out, sedimentation time 50 minutes, obtain the cuprous oxide film of 2400 nm, clean deposited samples with deionized water, by sample plus
Heat was to 150 degrees Centigrade 30 minutes.
5) it prepares p-type protective layer: above-mentioned plural layers being set on whirler, the chlorobenzene solution of P3HT is prepared, takes
10mg P3HT material, is dissolved in 1ml chlorobenzene solution, heats magnetic agitation 10h under 60 degrees celsius, takes 120 ul drop of solution
On above-mentioned film, solution using 3500 rpm/min speed rotates 30s after being uniformly distributed, using 150 DEG C of 30 min of drying,
Form p-type protective layer.
6) prepared by top electrode
Silver-colored top electrode is prepared using vacuum deposition method, vacuum chamber is depressed into 10-4 Pa using mechanical pump and molecular pump pumping
Under, evaporation thickness 200nm is monitored using film thickness instrument.
Embodiment of the present invention is not exhaustive claimed midpoint of technical range and in reality
It applies in a technical solution and new technical solution is formed by the same replacement of single or multiple technical characteristics, equally all at this
In the claimed range of invention；Simultaneously the present invention program it is all enumerate or unlisted embodiment in, in the same embodiment
In parameters be merely representative of the example (i.e. a kind of feasible scheme) of its technical solution, and between parameters not
There are stringent cooperation and qualified relations, wherein each parameter can be replaced mutually when stating and asking without prejudice to axiom and the present invention,
Except special declaration.
The present invention has following Inventive Characteristics:
1；Current cuprous oxide solar cell mostly uses ito thin film to prepare solar cell device as transparent conductive film.For
The flexible insufficient problem of ito thin film.The present invention prepares nano generator device using a kind of nano structure electrode, based on flexible base
Bottom/silver nanowires compound substrate prepares nano generator, and above-mentioned compound substrate can realize the flexible characteristic for being much better than ito thin film.
2；For prevent electrode in induction electronics by zinc-oxide nano column/metal contact surface it is uneven caused by " electricity
Son leakage ", as dispersed filler nano-pillar gap and is formed on coating using P3HT polymer material, therefore to receiving
When rice generator applies stress, stress can be conveyed to a nanometer column bottom by P3HT polymer, improve nano generator
Performance.
Claims (4)
1. a kind of nano generator based on nano structure membrane electrode, it includes a flexible base board, it is characterised in that described
It has been sequentially prepared from bottom to top on flexible base board:
1) silver nanowires conductive membrane layer, and constitute by flexible base board/compound hearth electrode of silver nanowires membrane of conducting layer layer；
2) zinc oxide films film layer is prepared on the flexible base board/silver nanowires membrane of conducting layer layer；
3) zinc-oxide nano column array is prepared on the zinc oxide films film layer, obtains zinc-oxide nano column array flexible；
4) cuprous oxide film layer is prepared by intermediate processing on the zinc-oxide nano column array；
5) hole transmission layer/active layer protective layer is prepared on the cuprous oxide film layer；
6) in the hole transmission layer/active layer protective layer goldentop electrode layer prepared above；
7) it is connected between two metal electrodes of hearth electrode and goldentop electrode layer with copper wire, is welded copper wire by electrocondution slurry,
At epoxy resin welded encapsulation, carrier is connected to after encapsulation, i.e. nanometer generating of the completion based on nano structure membrane electrode
Machine.
2. the nano generator according to claim 1 based on nano structure membrane electrode, it is characterised in that the flexibility
Substrate uses polyethylene (PE), polypropylene (PP), polyethylene terephthalate (PET), polyimides (PI), poly dimethyl
One of siloxanes (PDMS) is used as flexible substrate；
The average length of the silver nanowires is 3-200 microns, and silver nanowires average diameter is 20-200 nanometers, and silver nanowires is thin
Film average thickness is 200-2000nm, and the square resistance of silver nanowires film is 20-300 Ω/Sq；
The zinc oxide films film thickness is 15-300nm, and the square resistance of above-mentioned silver nanowires/zinc-oxide film is lower than 30 ohm
Ω/Sq；
For the zinc-oxide nano column altitude range in 500nm-6000nm, zinc-oxide nano column diameter is 50-200 nm, zinc oxide
Nano-array spacing is 50-100nm；
The cuprous oxide film layer or hole transmission layer/active layer protective layer thickness are 10-150nm；
The goldentop electrode layers thickness range is 30-100nm；
The copper wire is soldered to electrode using electrocondution slurry, and electrocondution slurry includes electric silica gel, and conductive carbon paste, conductive silver paste is led
10-30 minutes solidified welding points of 100-150 DEG C of heating can be used after plasma-based material welding electrode.
3. a kind of preparation method of the nano generator based on nano structure electrode as claimed in claim 1 or 2, it is characterised in that
The preparation method the following steps are included:
(a) it cleans flexible base board: first being cleaned with detergent, then cleaned using EtOH Sonicate, it is finally super using deionized water
Sound cleaning, is finally cleaned with deionized water, and the substrate after drying is maintained in nitrogen environment；
(b) it prepares silver nanowires film (AgNWs): taking the silver nanowires alcohol dispersion liquid of 1-10 mg/ml, flexible base board is placed
On whirler, silver nanowires film is obtained with the method for spin-coating, drying rear film is formed, the silver nanoparticle
Line film thickness is 200-1000nm；
(c) prepare zinc-oxide film (AgNWs/ZnO TF): by zinc compound, diethanol amine and ethyl alcohol mix at 40-100 DEG C
And reacted, ageing forms zinc oxide colloidal sol afterwards for 24 hours, zinc concentration 0.01-1mol/L, the substance of diethanol amine and zinc
Amount is than being 1:1；Above-mentioned film is set on whirler, obtains silver nanowires film/oxidation with the method for spin-coating
Zinc film, drying rear film are formed, and zinc-oxide film thickness range is 10-200nm, above-mentioned silver nanowires/zinc-oxide film
Square resistance be lower than 30 ohm of Ω/Sq；
(d) it preparing zinc-oxide nano column (AgNWs/ZnO TF/ZnO NR): above-mentioned film is placed in a beaker, film is face-down,
Zinc-oxide nano column is obtained by Hydrothermal Growth, i.e. acquisition glass substrate/silver nanowires/zinc-oxide film/zinc-oxide nano
Column, zinc-oxide nano column altitude range is in 500nm-2000nm；
(e) cuprous oxide film (AgNWs/ZnO TF/ZnO NR/Cu2O): electrochemical deposition cuprous oxide first is prepared
(Cu2O): with the cupric salt solution that distilled water configuration concentration is 0.01-0.2 mol/L, the lactic acid of 10 times of mantoquita concentration is added,
PH value is adjusted to 12 with NaOH solution, and above-mentioned solution is sufficiently stirred, obtains electroplate liquid, is existed using permanent potential instrument to above-mentioned film
Electro-deposition is carried out in electroplate liquid, obtains p-type Cu2O；
(f) it prepares hole transmission layer/active layer protective layer: above-mentioned film is set on whirler, with spin-coating
Method prepares hole transmission layer/active layer protective layer, i.e. p-type protective layer, by PEDOT:PSS solution or 2-10 mg/ml
P3HT/ chlorobenzene solution drips on above-mentioned film, forms p-type protective layer by spin-coating, is added after film forming using 150 degrees Celsius
Hot 20 minutes solidification p-type protective layers；
(g) metal or nonmetallic goldentop electrode layer are prepared by the method for silk-screen printing, uses 150 degrees Centigrades 30 after film forming
Minute solidification electrode layer, solidifies rear electrode layer sheet resistance at 30 ohm or less；Or using vacuum methods systems such as vacuum evaporation or sputterings
Standby electrode layer.
4. the preparation method of the nano generator based on nano structure electrode according to claim 3, it is characterised in that:
In the step (c), the zinc source is zinc acetate, one of zinc nitrate or zinc acetylacetonate or a variety of；
In the step (e), the mantoquita is copper acetate, one of copper nitrate or copper sulphate or a variety of；
In the step (f), the p-type protective layer be PEDOT:PSS solution or P3HT, PTB7 polymeric acceptor material, it is above-mentioned
Polymeric acceptor material solution can select one of chlorobenzene or dichloro-benzenes；
In the step (g), the electrode uses aluminum slurry, silver paste or Gold conductor silk-screen printing preparation, and non-gold can also be used
Belong to carbon pastes silk-screen printing preparation；The electrode uses vacuum evaporation, sputtering, the preparation of electron beam evaporation method.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111249619A (en) * | 2020-03-03 | 2020-06-09 | 南京沃高医疗科技有限公司 | Preparation method of electrode of transcranial electrical stimulator |
| CN111276566A (en) * | 2020-01-21 | 2020-06-12 | 中国海洋大学 | All-inorganic perovskite solar cell prepared based on liquid phase continuous spin coating direct phase transition method and preparation method and application thereof |
| CN115219571A (en) * | 2022-07-13 | 2022-10-21 | 西安交通大学 | Self-powered flexible sensor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655477A (en) * | 2016-04-08 | 2016-06-08 | 大连理工大学 | Flexible nanogenerator with heterogeneous junction structure as well as manufacturing method and application thereof |
| CN107946467A (en) * | 2017-12-13 | 2018-04-20 | 浙江海洋大学 | A kind of polymer solar battery based on multiple light trapping structure and preparation method thereof |
| CN108054225A (en) * | 2017-12-13 | 2018-05-18 | 浙江海洋大学 | A kind of cuprous oxide solar cell based on nano structure membrane electrode and preparation method thereof |
-
2018
- 2018-11-06 CN CN201811314230.XA patent/CN109560148A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655477A (en) * | 2016-04-08 | 2016-06-08 | 大连理工大学 | Flexible nanogenerator with heterogeneous junction structure as well as manufacturing method and application thereof |
| CN107946467A (en) * | 2017-12-13 | 2018-04-20 | 浙江海洋大学 | A kind of polymer solar battery based on multiple light trapping structure and preparation method thereof |
| CN108054225A (en) * | 2017-12-13 | 2018-05-18 | 浙江海洋大学 | A kind of cuprous oxide solar cell based on nano structure membrane electrode and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276566A (en) * | 2020-01-21 | 2020-06-12 | 中国海洋大学 | All-inorganic perovskite solar cell prepared based on liquid phase continuous spin coating direct phase transition method and preparation method and application thereof |
| CN111276566B (en) * | 2020-01-21 | 2022-06-07 | 中国海洋大学 | All-inorganic perovskite solar cell prepared based on liquid phase continuous spin coating direct phase transition method and preparation method and application thereof |
| CN111249619A (en) * | 2020-03-03 | 2020-06-09 | 南京沃高医疗科技有限公司 | Preparation method of electrode of transcranial electrical stimulator |
| CN111249619B (en) * | 2020-03-03 | 2023-08-25 | 南京沃高医疗科技有限公司 | Preparation method of electrode of transcranial electric stimulation instrument |
| CN115219571A (en) * | 2022-07-13 | 2022-10-21 | 西安交通大学 | Self-powered flexible sensor and preparation method thereof |
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