CN109545847A - A kind of virtual trench gate structure - Google Patents
A kind of virtual trench gate structure Download PDFInfo
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- CN109545847A CN109545847A CN201811326034.4A CN201811326034A CN109545847A CN 109545847 A CN109545847 A CN 109545847A CN 201811326034 A CN201811326034 A CN 201811326034A CN 109545847 A CN109545847 A CN 109545847A
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- 238000007667 floating Methods 0.000 claims abstract description 10
- 230000005516 deep trap Effects 0.000 claims description 6
- 230000004069 differentiation Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 15
- 229920005591 polysilicon Polymers 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- AHKZTVQIVOEVFO-UHFFFAOYSA-N oxide(2-) Chemical compound [O-2] AHKZTVQIVOEVFO-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of virtual trench gate structures, including groove, grooved inner surface is equipped with gate oxide, it is characterized in that, it is equipped with gate electrode in the groove, the gate electrode includes the first gate electrode and the second gate electrode of connection, and the connection vertex of first gate electrode and the second gate electrode can connect into equilateral triangle, the first gate electrode is sequentially connected broken line, and the width of first gate electrode and the second gate electrode is equal.Equilateral triangle can be connected by the connection vertex of first gate electrode and the second gate electrode, a kind of connection gate electrode structure for realizing P floating area is provided based on the principle for reducing the connection circumscribed radius of circle in vertex, it solves technique in the prior art and realizes difficulty, reach and has been not likely to produce recess when trench polysilicon silicon deposit, trench polysilicon silicon deposit is uniform, improves the beneficial effect of polysilicon filling quality and device performance.
Description
Technical field
The invention belongs to power semiconductor device technology fields, and in particular to a kind of virtual trench gate structure.
Background technique
Insulated gate bipolar transistor (IGBT) is a kind of novel power semiconductor, he has bipolar-type power crystal
Pipe and the advantages of power MOSFET, can not only be resistant to high pressure and provide high current, and is easy to control, on-off speed fastly and
Working frequency is high.Be widely used in the white home appliances such as air-conditioning, refrigerator and rail traffic, smart grid, electric car,
The high-end industry such as new energy is described as " CPU " of power converter plant by industry.
IGBT currently on the market mainly has plane and two kinds groove-shaped, and with groove-shaped for the main direction of development.
It is groove-shaped with the obvious advantage compared to plane: to can be further improved the current density of chip, guaranteeing that turn-off power loss is basically unchanged
In the case where, the on-state voltage drop of chip is greatly lowered.But since trench gate designs so that saturation current density increase, short circuit
Tolerance reduces.To solve this contradiction, various trench IGBT structures are had devised, wherein having virtual primitive unit cell region
The structure of (dummy cell) be it is more commonly used, it by by a portion grid rise channelling, remaining is only used to tie up
Hold pressure resistance.For maintaining the grid for not playing channelling of pressure resistance to be also known as " virtual trench gate ".It can achieve using the structure
Saturation current density is reduced under the premise of not changing gate densities, achieve the purpose that improve anti-short circuit capability (referring to, for example,
Number of patent application 201510477924.5).
Using virtual trench gate structure, in order to help to create injection enhancement effect, need that the part base area P is made to be known as floating
Area, it is common practice to use traditional virtual grid structure (such as Fig. 1).The structure includes: the metal collector (9) at the back side, p-type collection
Electrode (8), N-type field stop layer (7) and the drift region N- (6).Virtual trench gate structure is by first gate electrode (3) and the second gate electrode
(3i) and gate oxide (2) composition.First P type trap zone (1) and the window (11) and emitter electrode (10) for passing through dielectric layer (4)
It is connected.First polygate electrodes (3) and the second polygate electrodes (3i) separate the second P type trap zone (5), get along well any
Electrode is connected, and current potential is hanging.
Due to traditional virtual grid structure polysilicon filling when polysilicon since inner wall two sides to groove center-filled, when
When groove dimensions are smaller, it is easy to produce recess, causes filling uneven, influences the performance of device.It is therefore desirable to improve connection
Gate electrode structure.
Summary of the invention
The present invention provides a kind of virtual trench gate structures, are easy when solving the polysilicon filling of traditional virtual grid structure
The problem of generating recess, causing filling uneven, influence the performance of device.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is that: a kind of virtual trench gate structure, including
Groove, grooved inner surface are equipped with gate oxide, and gate electrode is equipped in the groove, and the gate electrode includes the first of connection
The connection vertex of gate electrode and the second gate electrode, first gate electrode and the second gate electrode can connect into equilateral triangle, described
First gate electrode is sequentially connected broken line, and the width of first gate electrode and the second gate electrode is equal.
Further, the first gate electrode and the second gate electrode are polygate electrodes.
Further, the angle that the first gate electrode is connect with the second gate electrode is 120 °.
Further, the connection angle of the sequentially connected broken line of the first gate electrode is not less than 100 °.
Further, the connection angle of the sequentially connected broken line of the first gate electrode is 150 °.
It further, further include p floating area, p floating differentiation is divided into the first P type trap zone and the 2nd P by the groove
Type well region, the second P type trap zone is between the first gate electrode, by the second gate electrode separation at multiple independent areas
Domain.
Further, first P type trap zone is deep trap, and depth is greater than trench depth, plays effectively enhancing hole product
Tired effect is without the effect for leading to resistance to drops.
Further, second P type trap zone is deep trap, and depth is greater than trench depth, plays effectively enhancing hole product
Tired effect is without the effect for leading to resistance to drops.
Further, first P type trap zone is connected by the window of dielectric layer with emitter electrode；Second p-type
Well region current potential is hanging.
Advantageous effects of the invention: the present invention can by the connection vertex of first gate electrode and the second gate electrode
Equilateral triangle is connected into, provides a kind of connection grid for realizing P floating area based on the principle for reducing the connection circumscribed radius of circle in vertex
Electrode structure solves technique in the prior art and realizes difficulty, reached and be not likely to produce recess, groove when trench polysilicon silicon deposit
Polycrystalline silicon deposit is uniform, improves the beneficial effect of polysilicon filling quality and device performance.
Detailed description of the invention
Fig. 1 is traditional virtual trench gate structure figure；
Fig. 2 is the virtual trench gate structure figure of the present invention；
Fig. 3 is traditional virtual trench gate connection structure floor map；
The virtual trench gate connection structure floor map of Fig. 4 present invention.
In figure: the first P type trap zone of 1-；2- gate oxide；3- first gate electrode；The second gate electrode of 3i-；4- passes through medium
Layer；The second P type trap zone of 5-；The drift region 6-N-；7-N type field stop layer；8- p-type collector；9- metal collector；10- emitter
Electrode；11- window.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.Following embodiment is only used for clearly illustrating the present invention
Technical solution, and not intended to limit the protection scope of the present invention.
In insulated gate bipolar transistor where virtual trench gate structure, used semiconductor material is silicon, silicon carbide
Or silicon nitride.As shown in Fig. 2, semiconductor devices is successively arranged metal collector, p-type collector, the termination of N-type field from bottom to up
Floor, the drift region N- and p floating area, p floating area are equipped with virtual trench gate structure, virtual trench gate structure, including groove, groove
Inner surface is equipped with gate oxide, and gate electrode is equipped in groove, and gate electrode includes the first gate electrode 3 and second gate electricity of connection
The connection vertex of pole 3i, first gate electrode 3 and the second gate electrode 3i can connect into equilateral triangle, first gate electrode 3 be according to
The width of the broken line of secondary connection, first gate electrode 3 and the second gate electrode 3i are equal.First gate electrode 3 and the second gate electrode 3i are equal
For polygate electrodes.The angle that first gate electrode 3 is connect with the second gate electrode 3i is 120 °, and first gate electrode 3 is sequentially connected
Broken line connection angle be not less than 100 °, preferably 150 °.
P floating area includes the first P type trap zone and the second P type trap zone, and the first P type trap zone 1 and the second P type trap zone 5 are by groove
It separates.First P type trap zone 1 and the second P type trap zone 5 can may be deep trap for shallow well, and the present invention is preferably deep trap, and degree is big
In trench depth, play the role of effectively enhancing the effect of hole accumulation without leading to resistance to drops.Second P type trap zone 5
Between the first gate electrode 3, multiple independent regions are separated by the second gate electrode 3i, the first P type trap zone 1 is logical
The window 11 for crossing dielectric layer 4 is connected with emitter electrode 10, and the second P type trap zone 5 get along well any electrode be connected, current potential is hanging.
Virtual trench gate structure is made of first gate electrode 3 and the second gate electrode 3i and gate oxide 2, and the second P type trap zone 5 is separated
At multiple independent regions.Relative to traditional virtual grid structure, present invention be distinguished in that the structure of virtual trench gate is not
Together, as shown in Figure 3, Figure 4.
Fig. 3 is for traditional virtual trench gate structure plan view.First polygate electrodes 3 and the second polygate electrodes 3i
It is mutually perpendicular to.When polycrystalline silicon deposit, polysilicon since inner left wall, right-angled apices to groove center-filled, in intersection
Recess easy to form influences polysilicon filling effect.Assuming that groove width is a, group between internal, right-angled apices on the left of polysilicon
At triangle, side length is not a, and circumscribed radius of circle is R1, then R1=0.625a.
Fig. 4 is a kind of virtual trench gate structure plan view proposed by the present invention.First gate electrode 3 is not straight line, and
It is divided into the broken line that connection angle is 150o, and it is 120 that the broken line of first gate electrode 3 and the second gate electrode 3i, which are connected with each other angle,
The width of o, first gate electrode 3 and the second gate electrode 3i are equal.The connection vertex structure of first gate electrode 3 and the second gate electrode 3i
At equilateral triangle, side length is groove width a.To groove center-filled since the vertex of coupling part when polycrystalline silicon deposit, outside
Circle of contact radius R2=0.577a.
From the above analysis as can be seen that the circumscribed radius of circle of coupling part: R2 < R1.The polycrystalline silicon deposit of virtual trench gate
Quality is improved.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (9)
1. a kind of virtual trench gate structure, including groove, grooved inner surface is equipped with gate oxide, which is characterized in that the groove
Interior to be equipped with gate electrode, the gate electrode includes the first gate electrode and the second gate electrode of connection, first gate electrode and second
The connection vertex of gate electrode can connect into equilateral triangle, and the first gate electrode is sequentially connected broken line, first grid electricity
The width of pole and the second gate electrode is equal.
2. a kind of virtual trench gate structure according to claim 1, which is characterized in that the first gate electrode and second gate
Electrode is polygate electrodes.
3. a kind of virtual trench gate structure according to claim 1, which is characterized in that the first gate electrode and second gate
The angle of electrode connection is 120 °.
4. a kind of virtual trench gate structure according to claim 1, which is characterized in that the first gate electrode is sequentially connected
Broken line connection angle be not less than 100 °.
5. a kind of virtual trench gate structure according to claim 4, which is characterized in that the first gate electrode is sequentially connected
Broken line connection angle be 150 °.
6. a kind of virtual trench gate structure according to claim 1, which is characterized in that further include p floating area, the groove
P floating differentiation is divided into the first P type trap zone and the second P type trap zone, the second P type trap zone be located at the first gate electrode it
Between, by the second gate electrode separation at multiple independent regions.
7. a kind of virtual trench gate structure according to claim 6, which is characterized in that first P type trap zone is deep trap,
Depth is greater than trench depth.
8. a kind of virtual trench gate structure according to claim 6, which is characterized in that second P type trap zone is deep trap,
Depth is greater than trench depth.
9. a kind of virtual trench gate structure according to claim 6, which is characterized in that first P type trap zone passes through Jie
The window of matter layer is connected with emitter electrode；The second P type trap zone current potential is hanging.
Priority Applications (1)
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| CN201811326034.4A CN109545847A (en) | 2018-11-08 | 2018-11-08 | A kind of virtual trench gate structure |
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| CN201811326034.4A CN109545847A (en) | 2018-11-08 | 2018-11-08 | A kind of virtual trench gate structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220130998A1 (en) * | 2020-10-28 | 2022-04-28 | Cree, Inc. | Power semiconductor devices including angled gate trenches |
| US11769828B2 (en) | 2020-10-28 | 2023-09-26 | Wolfspeed, Inc. | Gate trench power semiconductor devices having improved deep shield connection patterns |
| US11837657B2 (en) | 2020-10-28 | 2023-12-05 | Wolfspeed, Inc. | Gate trench power semiconductor devices having improved deep shield connection patterns |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103403872A (en) * | 2011-03-09 | 2013-11-20 | 丰田自动车株式会社 | Insulated-gate bipolar transistor |
| US20150206960A1 (en) * | 2014-01-20 | 2015-07-23 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
| CN104882477A (en) * | 2015-06-03 | 2015-09-02 | 杭州士兰集成电路有限公司 | Trench gate IGBT device and manufacturing method thereof |
| CN106449741A (en) * | 2015-08-06 | 2017-02-22 | 常州中明半导体技术有限公司 | Insulated gate bipolar transistor device structure |
| CN107068742A (en) * | 2015-03-02 | 2017-08-18 | 常州中明半导体技术有限公司 | The semiconductor devices of primitive cell structure is embedded in discontinuous p-type base |
-
2018
- 2018-11-08 CN CN201811326034.4A patent/CN109545847A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103403872A (en) * | 2011-03-09 | 2013-11-20 | 丰田自动车株式会社 | Insulated-gate bipolar transistor |
| US20150206960A1 (en) * | 2014-01-20 | 2015-07-23 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
| CN107068742A (en) * | 2015-03-02 | 2017-08-18 | 常州中明半导体技术有限公司 | The semiconductor devices of primitive cell structure is embedded in discontinuous p-type base |
| CN104882477A (en) * | 2015-06-03 | 2015-09-02 | 杭州士兰集成电路有限公司 | Trench gate IGBT device and manufacturing method thereof |
| CN106449741A (en) * | 2015-08-06 | 2017-02-22 | 常州中明半导体技术有限公司 | Insulated gate bipolar transistor device structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220130998A1 (en) * | 2020-10-28 | 2022-04-28 | Cree, Inc. | Power semiconductor devices including angled gate trenches |
| US11769828B2 (en) | 2020-10-28 | 2023-09-26 | Wolfspeed, Inc. | Gate trench power semiconductor devices having improved deep shield connection patterns |
| US11837657B2 (en) | 2020-10-28 | 2023-12-05 | Wolfspeed, Inc. | Gate trench power semiconductor devices having improved deep shield connection patterns |
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Application publication date: 20190329 |