CN109541868A - Modification method, device and storage medium - Google Patents
Modification method, device and storage medium Download PDFInfo
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- CN109541868A CN109541868A CN201811640447.XA CN201811640447A CN109541868A CN 109541868 A CN109541868 A CN 109541868A CN 201811640447 A CN201811640447 A CN 201811640447A CN 109541868 A CN109541868 A CN 109541868A
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- 238000002715 modification method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 158
- 230000007547 defect Effects 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 107
- 229910052751 metal Inorganic materials 0.000 claims abstract description 107
- 238000003466 welding Methods 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000012360 testing method Methods 0.000 claims description 37
- 230000004927 fusion Effects 0.000 claims description 27
- 238000012545 processing Methods 0.000 claims description 26
- 238000001514 detection method Methods 0.000 claims description 22
- 230000005484 gravity Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 230000005055 memory storage Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 18
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007499 fusion processing Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The present invention provides a kind of modification method, device and storage medium, this method comprises: obtaining the location information of the first pixel region where defect, defect is generated by the pressure difference between two signal wires connecting with the pixel electrode in the first pixel region, and two signal wires there are pressure difference are respectively the signal wire in the storage capacitance line and second metal layer of the first metal layer；According to location information, control laser welder, to the first pixel region there are two signal wires of pressure difference to carry out welding.In the present invention, to, due to the defect that the pressure difference between two signal wires connecting with pixel electrode generates, carrying out the welding of signal wire in array substrate, so that there are keeping voltage consistent between two signal wires of pressure difference, and then defect is modified.
Description
Technical field
The present invention relates to base board defect correction technique field more particularly to a kind of modification methods, device and storage medium.
Background technique
Liquid crystal display (Liquid Crystal Display, LCD) has the characteristics that small size, low power consumption, no radiation,
It is existing that oneself occupies the leading position of plane display field.The main structure of liquid crystal display includes into box together and presss from both sides liquid crystal
If array substrate and color membrane substrates therebetween, the grid line, source electrode line and shape for being provided with scanning signal are formed in array substrate
The pixel electrode of vegetarian refreshments is imaged.The preparation process of liquid crystal display mainly includes the array work for preparing array substrate and color membrane substrates
Skill, by array substrate and color membrane substrates to box and inject liquid crystal molding process and subsequent mould group technique, in above-mentioned preparation
In technique, the bad pixel of liquid crystal display is the defect unavoidably occurred in normal preparation process.
In the prior art, if metal layer where metal layer and public electrode wire where grid line in array substrate it
Between be provided with insulating layer, then when there are voltage differences between the metal layer where the metal layer and public electrode wire where grid line
When, the potential difference that will cause two metal layers is not 0, in turn results in the block of pixels presentation that array substrate Central Plains should be shown as dim spot
For bright spot, cause the pixel of liquid crystal display bad.
Summary of the invention
The present invention provides a kind of modification method, device and storage medium, in array substrate due to being connect with pixel electrode
Two signal wires between pressure difference generate defect, carry out the welding of signal wire so that there are two signal wires of pressure difference it
Between keep voltage consistent, and then defect is modified.
The first aspect of the present invention provides a kind of modification method, the array substrate include pixel layer, the first metal layer and
Second metal layer, the pixel layer include multiple pixel regions, and each pixel region includes a pixel electrode, Mei Gesuo
Pixel electrode is stated to connect with the signal wire in the first metal layer, the signal wire in the second metal layer respectively, it is described to repair
Correction method includes:
Obtain defect where the first pixel region location information, the defect be by in first pixel region
Pixel electrode connection two signal wires between pressure difference generate, described there are two signal wires of pressure difference is respectively described
Signal wire in the storage capacitance line and second metal layer of the first metal layer；
According to the positional information, laser welder is controlled, two there are pressure difference of first pixel region are believed
Number line carries out welding.
Optionally, there are insulating layers between the first metal layer and the second metal layer, and each pixel region is exhausted
Through-hole is reserved in edge layer；The location information includes coordinate of first pixel region in the array substrate and described
Coordinate of the through-hole of first pixel region in the array substrate；
It is described according to the positional information, control laser welder, to first pixel region there are the two of pressure difference
A signal wire carries out welding, comprising:
According to coordinate of first pixel region in the array substrate, described the is determined in the array substrate
One pixel region；
First pixel region through-hole at the coordinate in the array substrate, to first pixel region
There are two signal wires of pressure difference to carry out welding.
Optionally, coordinate of the through-hole of first pixel region in the array substrate includes: first pixel
The coordinate of center of the through-hole in region in the array substrate；
It is described that first pixel region, there are two signal wires of pressure difference to carry out welding, comprising:
First pixel region through-hole at the coordinate of the center in the array substrate, to described first
Pixel region there are two signal wires of pressure difference carry out welding.
Optionally, on gravity direction, the second metal layer is located at the top of the first metal layer, described to described
First pixel region there are two signal wires of pressure difference carry out welding before, further includes:
According to the coordinate of the center, fusion point is determined in the second metal layer；
It is described that first pixel region, there are two signal wires of pressure difference to carry out welding, comprising:
According to the coordinate of the center and the fusion point, to two there are pressure difference of first pixel region
Signal wire carries out welding.
Optionally, the coordinate according to the center determines fusion point in the second metal layer, comprising:
On vertical direction, by projected position of the coordinate of the center in the second metal layer, as institute
State fusion point.
Optionally, it is described welding is carried out there are two signal wires of pressure difference to first pixel region after, also wrap
It includes:
First testing result of the array substrate after obtaining welding, first testing result are described molten for characterizing
There are still defects for the array substrate after connecing；
Welding again is carried out to the defects of the array substrate after the welding, until the second testing result is obtained,
Second testing result is used to characterize the array substrate after the welding, and there is no defects.
Optionally, the signal wire in the second metal layer in two signal wires there are pressure difference are as follows: drain line or source
Polar curve.
The second aspect of the present invention provides a kind of correcting device, comprising:
Position information acquisition module, for obtaining the location information of the first pixel region where defect, the defect is
It is generated by the pressure difference between two signal wires being connect with the pixel electrode in first pixel region, described there are pressure differences
Two signal wires be respectively signal wire in the storage capacitance line and second metal layer of the first metal layer；
Welded module, for according to the positional information, controlling laser welder, the presence to first pixel region
Two signal wires of pressure difference carry out welding.
Optionally, there are insulating layers between the first metal layer and the second metal layer, and each pixel region is exhausted
Through-hole is reserved in edge layer；The location information includes coordinate of first pixel region in the array substrate and described
Coordinate of the through-hole of first pixel region in the array substrate；
The welded module, specifically for the coordinate according to first pixel region in the array substrate, in institute
It states and determines first pixel region in array substrate；In seat of the through-hole in the array substrate of first pixel region
At mark, to first pixel region, there are two signal wires of pressure difference to carry out welding.
Optionally, coordinate of the through-hole of first pixel region in the array substrate includes: first pixel
The coordinate of center of the through-hole in region in the array substrate；
The welded module, specifically for centre bit of the through-hole in first pixel region in the array substrate
At the coordinate set, to first pixel region, there are two signal wires of pressure difference to carry out welding.
Optionally, on gravity direction, the second metal layer is located at the top of the first metal layer.
Optionally, described device further include: fusion point determining module；
The fusion point determining module determines in the second metal layer for the coordinate according to the center
Fusion point.
Optionally, the welded module, it is right specifically for the coordinate and the fusion point according to the center
First pixel region there are two signal wires of pressure difference carry out welding.
Optionally, the fusion point determining module is specifically used on vertical direction, the coordinate of the center is existed
Projected position in the second metal layer, as the fusion point.
Optionally, described device further include: testing result obtains module；
The testing result obtains module, described for obtaining the first testing result of the array substrate after welding
First testing result is used to characterize the array substrate after the welding, and there are still defects；To the array after the welding
The defects of substrate carries out welding again, until obtaining the second testing result, second testing result is described molten for characterizing
Defect is not present in the array substrate after connecing.
Optionally, the signal wire in the second metal layer in two signal wires there are pressure difference are as follows: drain line or source
Polar curve.
The third aspect of the present invention provides a kind of correcting device, comprising: at least one processor and memory；
The memory stores computer executed instructions；
At least one described processor executes the computer executed instructions of the memory storage, so that the correcting device
Execute above-mentioned modification method.
The fourth aspect of the present invention provides a kind of computer readable storage medium, deposits on the computer readable storage medium
Computer executed instructions are contained, when the computer executed instructions are executed by processor, realize above-mentioned modification method.
The fifth aspect of the present invention provides a kind of update the system, comprising: correcting device, detection device and processing unit；Institute
Processing unit is stated to connect with the correcting device, the detection device respectively；
The detection device is used to detect the first pixel region obtained where the defects of array substrate and the defect
The location information in domain, and the location information is sent to processing unit；The location information includes: first pixel region
Coordinate of the through-hole of coordinate and first pixel region in the array substrate in array substrate, the array substrate
Including pixel layer, the first metal layer and second metal layer, the pixel layer includes multiple pixel regions, each pixel region
Including a pixel electrode, each pixel electrode respectively with signal wire, second metal in the first metal layer
Signal wire connection in layer, the defect be by two signal wires being connect with the pixel electrode in first pixel region it
Between pressure difference generate；
The processing unit, for obtaining the through-hole of first pixel region in array substrate according to location information
Centre coordinate, and the location information is sent to the correcting device, includes first pixel in the location information
Centre coordinate of the through-hole in region in array substrate；
The correcting device controls laser welder for obtaining the location information, and according to the positional information, right
First pixel region there are two signal wires of pressure difference carry out welding.
The present invention provides a kind of modification method, device and storage medium, this method comprises: obtaining the first picture where defect
The location information in plain region, defect are by the pressure difference between two signal wires connecting with the pixel electrode in the first pixel region
It generates, two signal wires there are pressure difference are respectively the signal in the storage capacitance line and second metal layer of the first metal layer
Line；According to location information, control laser welder, to the first pixel region there are two signal wires of pressure difference to carry out welding.
In the present invention, to, due to the defect that the pressure difference between two signal wires connecting with pixel electrode generates, being carried out in array substrate
The welding of signal wire, so that there are keeping voltage consistent between two signal wires of pressure difference, and then defect is modified.
Detailed description of the invention
Fig. 1 is the schematic diagram one of existing defects in array substrate provided by the invention；
Fig. 2 is the flow diagram one of modification method provided by the invention；
Fig. 3 is the schematic diagram two of existing defects in array substrate provided by the invention；
Fig. 4 is the flow diagram two of modification method provided by the invention；
Fig. 5 is the diagrammatic cross-section provided by the invention to signal wire welding；
Fig. 6 is the flow diagram three of modification method provided by the invention；
Fig. 7 is the connection schematic diagram of update the system provided by the invention；
Fig. 8 is the structural schematic diagram one of correcting device provided by the invention；
Fig. 9 is the structural schematic diagram two of correcting device provided by the invention；
Figure 10 is the structural schematic diagram three of correcting device provided by the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the embodiment of the present invention, to this
Technical solution in inventive embodiments is clearly and completely described, it is clear that described embodiment is that a part of the invention is real
Example is applied, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creation
Property labour under the premise of every other embodiment obtained, shall fall within the protection scope of the present invention.
The main structure of liquid crystal display includes into box together and by the array substrate of liquid crystal sandwiched therebetween and color film base
Plate forms the grid line for being provided with scanning signal, source electrode line and the pixel electrode for forming pixel in array substrate.Specifically
, the array substrate includes pixel layer and the first metal layer and second metal layer, it is generally the case that is arranged on the glass substrate
Metal layer, in the top of metal layer setting pixel layer, the size (width and length) of metal layer and pixel layer is equal.
Wherein, it is provided with signal wire in each metal layer, illustratively, source electrode line and drain electrode is provided in the first metal layer
Line is provided with grid line and storage capacitance line in second metal layer；In the prior art, it mutually hangs down as being provided in the first metal layer
Straight source electrode line and drain line is provided with the grid line being parallel to each other and storage capacitance line in second metal layer, further,
The storage capacitance line in source electrode line and second metal layer in one metal layer is vertically arranged；Specifically, in grid line and source electrode line
The region intersected to form corresponding region in pixel layer is pixel region.
Fig. 1 is the schematic diagram one of existing defects in array substrate provided by the invention, as shown in Figure 1, longitudinal signal wire
For source electrode line, lateral signal wire is storage capacitance line, and under actual conditions, storage capacitance line and source electrode line are located at different metals
Layer, in Fig. 1 for ease of description, storage capacitance line and source electrode line are shown at the corresponding position of pixel layer, due to grid line
It is arranged in parallel with storage capacitance line, in the intersection region that storage capacitance line and source electrode line are formed is pixel in corresponding figure therefore
Region.Drain line and grid line is not shown in the figure.Source electrode line in Fig. 1 is longitudinal black line, and storage capacitance line is lateral ash
Line.
The pixel layer in array substrate includes multiple pixel regions, and each pixel region includes a pixel electricity
Pole, each pixel electrode are connect with the signal wire in two metal layers respectively；Illustratively, include in array substrate
Two metal layers are provided with source electrode line and drain line in the first metal layer, and grid line and storage electricity are provided in second metal layer
Hold line, specific connection type can by way of via hole by the metal layer of upper and lower level signal wire and pixel electrode connect
It connects.
It is envisioned that the modification method in the present embodiment is equally applicable to the letter in pixel region and two metal layers
The case where number line connection.
Under normal circumstances, dim spot is presented under predeterminated voltage in the corresponding pixel region of pixel electrode；But due to electric with pixel
The corresponding voltage of two signal wires that pole is separately connected is different, that is, when there is pressure difference, illustratively, such as connects respectively with pixel electrode
There are when pressure difference between the storage capacitance line connect and source electrode line, the corresponding pixel region of pixel electrode is presented under predeterminated voltage
Bright spot causes the pixel region in array substrate to show bad, existing defects.
To solve the above-mentioned problems, the present invention provides a kind of modification methods of array substrate, by way of welding pair
There are two signal wires of pressure difference to carry out welding, so that connected between the signal wire being connect with the pixel region of existing defects, into
And make there are the corresponding voltage of the two of pressure difference signal wire is equal, solve between signal wire that there are pressure differences to cause pixel region aobvious
The problem of showing bright spot.
Modification method provided by the invention is applied in update the system, specifically, including: detection dress in the update the system
It sets, processing unit and correcting device, specifically, being repaired using correcting device as executing subject to provided by the invention in following embodiments
Equipment is illustrated.
Modification method provided by the invention is illustrated below with reference to Fig. 2, Fig. 2 is modification method provided by the invention
The executing subject of flow diagram one, method flow shown in Fig. 2 can be correcting device, which can be by arbitrary software
And/or hardware realization.As shown in Fig. 2, modification method provided in this embodiment may include:
S201, obtain defect where the first pixel region location information, defect be by in the first pixel region
What the pressure difference between two signal wires of pixel electrode connection generated, two signal wires there are pressure difference are respectively the first metal layer
Storage capacitance line and second metal layer in signal wire.
Detection device in the present embodiment, for testing array substrate, the defects of acquisition array substrate,
In, the defects of array substrate may include multiple types, illustratively, if any core foreign matter, there are dim spot, there are bright spots etc..
It is previously stored with the corresponding defect characteristic of various types of defects in detection device, is obtaining all defects in array substrate
Afterwards, classify to firmly believing in array substrate.Illustratively, the corresponding defect type of modification method in the present embodiment is to deposit
In bright spot.
It is envisioned that there are many reason of there are fleck defects in array substrate, the available bright spot of detection device
The generational verctor of defect obtains the default corresponding defect of reason, specifically, the default reason of the defects of the present embodiment are as follows: with
There are pressure differences between two signal wires of the pixel electrode connection in the first pixel region.Detection device can be each by obtaining
The voltage between signal connecting in the corresponding pixel region of fleck defect with pixel electrode obtains and presets reason pair in embodiment
The defect answered.
Detection device, according to the position of defect, obtains the first pixel where defect after the defect for obtaining default reason
The location information in region；Specifically, the location information of the first pixel region where the defect can exist for the first pixel region
Coordinate in array substrate.Detection device after the location information for obtaining the first pixel region where defect, can directly by
The location information is sent to correcting device, so that correcting device obtains the position of the first pixel region where defect；Alternatively, inspection
Device is surveyed after the location information for obtaining the first pixel region where defect, the location information directly can be sent to processing
Device is sent to correcting device after the location information is further processed in processing unit.
Default reason in the present embodiment is between two signal wires connecting with the pixel electrode in the first pixel region
There are pressure differences, specifically, in the present embodiment it is preset there are two signal wires of pressure difference can be storage capacitance line and source electrode line,
It may be storage capacitance line and drain line.
S202 controls laser welder according to location information, to the first pixel region there are two signal wires of pressure difference
Carry out welding.
In the present embodiment, after the location information of the first pixel region where obtaining defect in correcting device, it can determine
First pixel region of existing defects in array substrate, the pixel region pixel electrode connection two preset signals lines between
There are pressure differences.
As shown in Figure 1, illustratively shown in Fig. 1 it is preset there are two signal wires of pressure difference be storage capacitance line and
Source electrode line, storage capacitance line and source electrode line are vertically arranged, the pixel electrode in the first pixel region and storage capacitance line and source electrode
Line connects, and is not shown in Fig. 1；Fleck defect is presented in the first pixel region in the present embodiment, illustratively uses black table in Fig. 1
Show fleck defect.
Fig. 3 is the schematic diagram two of existing defects in array substrate provided by the invention, as shown in figure 3, illustrative in Fig. 3
Show it is preset there are two signal wires of pressure difference be storage capacitance line and drain line, storage capacitance line is parallel with drain line to be set
It sets, under actual conditions, position of the storage capacitance line in second metal layer is identical as position of the drain line in the first metal layer,
For ease of description, storage capacitance line and drain line side-by-side parallel are indicated in Fig. 3；Pixel electrode in first pixel region with
Storage capacitance line is connected with drain line；The first pixel region in the present embodiment is presented fleck defect, illustratively with black in Fig. 3
Color table shows fleck defect.Lateral gray line in Fig. 3 is storage capacitance line, and lateral grid lines is drain line.
In the present embodiment, the of existing defects according to the location information of the first pixel region where defect, can be determined
One pixel region；Correcting device can be connect with laser welder, and after determining the first pixel region of existing defects, control swashs
Bare electrode device, to the first pixel region, there are two signal wires of pressure difference to carry out welding.
Illustratively, as shown in Figure 1, due to connect with the pixel electrode in the first pixel region be storage capacitance line and
Source electrode line, and storage capacitance line and source electrode line are vertically arranged, and in the vertical direction, to be melted to storage capacitance line and source electrode line
It connects, welding can be carried out to storage capacitance line and source electrode line at the position that storage capacitance line and source electrode line intersect in Fig. 1, such as schemed
Shown in location A in 1.After storage capacitance line and source electrode line carry out welding, storage capacitance line is connected with source electrode line, and the two is corresponding
Voltage it is equal, be not present pressure difference so that fleck defect dim spot.
Illustratively, as shown in figure 3, due to connect with the pixel electrode in the first pixel region be storage capacitance line and
Drain line, and storage capacitance line and drain line are arranged in parallel, and in the vertical direction, to melt to storage capacitance line and drain line
It connects, welding can be carried out to storage capacitance line and drain line in storage capacitance line and drain line any position in Fig. 3, such as schemed
Shown in B location and location of C in 3.After storage capacitance line and drain line carry out welding, storage capacitance line is connected with drain line,
The corresponding voltage of the two is equal, pressure difference is not present, so that fleck defect dim spot.
The present embodiment provides a kind of modification methods, this method comprises: obtaining the position of the first pixel region where defect
Information, defect are generated by the pressure difference between two signal wires connecting with the pixel electrode in the first pixel region, are existed
Two signal wires of pressure difference are respectively the signal wire in the storage capacitance line and second metal layer of the first metal layer；Believed according to position
Breath controls laser welder, and to the first pixel region, there are two signal wires of pressure difference to carry out welding.It is right in the present embodiment
Due to the defect that the pressure difference between two signal wires connecting with pixel electrode generates in array substrate, the molten of signal wire is carried out
It connects, so that there are keeping voltage consistent between two signal wires of pressure difference, and then defect is modified.
The fusion process in modification method provided by the invention is described in detail below with reference to Fig. 4, Fig. 4 is the present invention
The flow diagram two of the modification method of offer, as shown in figure 4, modification method provided in this embodiment may include:
S401 obtains the location information of the first pixel region where defect.
The defects of the present embodiment is by between two signal wires connecting with the pixel electrode in the first pixel region
Pressure difference generate, specifically, the first pixel region there are two signal wires of pressure difference to be respectively as follows: storage capacitance line and drain electrode
Line, since storage capacitance line and drain line are arranged in parallel, the optional position for carrying out welding connection therebetween is more, and has preferable
Welding effect.
Specifically, there are insulating layers between the first metal layer and second metal layer；Fig. 5 is provided by the invention to signal wire
The diagrammatic cross-section of welding, as shown in figure 5, the corresponding the first metal layer 100 of drain line the second gold medal corresponding with storage capacitance line
There are insulating layers 300 between category layer 200, specifically, the insulating layer 300 can be JAS insulating layer.
When preparing array substrate, through-hole is reserved in the corresponding position of insulating layer in each pixel region；Wherein, position
Confidence breath includes seat of the through-hole of coordinate and first pixel region of first pixel region in array substrate in array substrate
Mark.Specifically, the through-hole of coordinate and first pixel region of first pixel region in array substrate is in array substrate
Coordinate is to be obtained by detection device when testing array substrate.
S402 determines the first pixel region according to coordinate of first pixel region in array substrate in array substrate.
In the present embodiment, each array substrate pre-sets corresponding coordinate system, is obtaining the first pixel region in battle array
After coordinate on column substrate, it can be pre-set according to coordinate and array substrate of first pixel region in array substrate
Corresponding coordinate system determines the first pixel region in array substrate.
It is envisioned that location information can also be identification information of first pixel region in array substrate, such as the
Pixel region number of one pixel region in array substrate, also determines first according to pixel region number in array substrate
Pixel region.
S403, in the through-hole at coordinate in array substrate of the first pixel region, to the first pixel region there are pressures
Two signal wires of difference carry out welding.
Specifically, being referred to welding is carried out there are the two of pressure difference signal wire；Laser welder is controlled, to the first metal
The corresponding drain line of first pixel region is melted in layer 100, and laser intensity is greater than the transmitted intensity of insulating layer 300, so that
The drain line of melting is connect with the storage capacitance line in second metal layer 200；But this method is used to carry out welding to signal wire
During, it may cause since laser energy is excessive when penetrating insulating layer 300, cause the splashing of the drain line of melting.
In the present embodiment, in order to solve this problem, through-hole can be reserved with by each pixel region in a insulating layer；Amendment dress
It sets after the location information for obtaining the first pixel region where defect, can be existed according to the through-hole of the first pixel region therein
Coordinate in array substrate determines the position of through-hole；Specifically, to can be with there are the welding between the two of pressure difference signal wire
Be: in the through-hole at coordinate in array substrate of the first pixel region, to the first pixel region there are two letters of pressure difference
Number line carries out welding.
It is worth noting that, the welding in the present embodiment is control laser welder, to the first picture in the first metal layer 100
The corresponding drain line in plain region is melted, so that the drain line of melting passes through the storage in the through-hole and second metal layer 200
Capacitor line connection, avoids the generation of splash phenomena in fusion process.
Further, coordinate of the through-hole of the first pixel region in the present embodiment in array substrate includes: the first picture
The coordinate of center of the through-hole in plain region in array substrate, wherein the through-hole of the first pixel region is in array substrate
Center coordinate, the as coordinate of center of the center of circle of through-hole in array substrate.Specifically, detection device exists
It, can be by the through-hole of first pixel region in array base after obtaining coordinate of the through-hole of the first pixel region in array substrate
Coordinate on plate is sent to processing unit；Microscope is provided in processing unit in the present embodiment, processing unit control is micro-
Mirror amplifies processing at coordinate in array substrate to the through-hole of the first pixel region, so that after processing unit is according to amplification
Through-hole, obtain the coordinate of center of the through-hole in array substrate, and the center by the through-hole in array substrate
Coordinate be sent to correcting device so that correcting device obtains the coordinate of center of the through-hole in array substrate.
Specifically, to there are the weldings between the two of pressure difference signal wire may is that in the first pixel region in the present embodiment
At the coordinate of center of the through-hole in domain in array substrate, to the first pixel region there are two signal wires of pressure difference into
Row welding.
Further, in the present embodiment, on gravity direction, second metal layer is located at the top of the first metal layer.It is obtaining
After the coordinate for taking center of the through-hole of the first pixel region in array substrate, it can be existed according to the coordinate of the center
Fusion point is determined in second metal layer.Specifically, in the present embodiment on vertical direction, by the coordinate of center in the second gold medal
Belong to the projected position on layer, as fusion point.
Specifically, to there are the weldings between the two of pressure difference signal wire may is that according to center in the present embodiment
Coordinate and fusion point, to the first pixel region, there are two signal wires of pressure difference to carry out welding.
Illustratively, such as in the corresponding the first metal layer 100 of drain line, the through-hole with the first pixel region is obtained in battle array
The identical position of the coordinate of center on column substrate, as fusion point；Laser welder is controlled in the present embodiment to first
Drain line in metal layer 100 carries out welding, and the drain line of melting passes through in the through-hole and metal layer 300 on insulating layer 300
Storage capacitance line connection.
Wherein, the position where the fusion point and through-hole in correcting device control laser welder aligned metal layer, right
Level postpones, and control laser welder releases energy, so that there are two signal wire weldings of pressure difference.
As shown in figure 5, illustrative, the storage capacitance in drain line and second metal layer 200 in the first metal layer 100
Line is connected by insulating layer 300；Specifically, being wherein the drain line of the melting of the first metal layer 100 by the dash area of through-hole.
In the present embodiment, there is insulation between the corresponding metal layer of two signal wires there are pressure difference of the first pixel region
Layer, each pixel region are reserved with through-hole in the corresponding position of insulating layer；Location information includes the first pixel region in array
Coordinate of the through-hole of coordinate and the first pixel region on substrate in array substrate；Further, the first pixel region is logical
Coordinate of the hole in array substrate includes: the coordinate of center of the through-hole of the first pixel region in array substrate；According to
The coordinate of center determines fusion point on the corresponding metal layer of two signal wires there are pressure difference of the first pixel region；
According to the coordinate and fusion point of center, to the first pixel region there are two signal wires of pressure difference to carry out welding.This
Embodiment provide modification method not only make there are between the two of pressure difference signal wire keep voltage it is consistent, realize to defect into
Row amendment, also avoids the generation of splash phenomena in fusion process during welding.
Modification method provided by the invention is further described below with reference to Fig. 6, Fig. 6 is amendment provided by the invention
The flow diagram three of method, as shown in fig. 6, modification method provided in this embodiment may include:
S601 obtains the location information of the first pixel region where defect.
S602 determines the first pixel region according to coordinate of first pixel region in array substrate in array substrate.
S603, in the through-hole at coordinate in array substrate of the first pixel region, to the first pixel region there are pressures
Two signal wires of difference carry out welding.
S604, the first testing result of the array substrate after obtaining welding, the first testing result is for after characterizing welding
There are still defects for array substrate.
In the present embodiment, corresponding introduced details are being carried out to corresponding first pixel region of the defects of array substrate
Afterwards, detection device further can carry out defect test to the array substrate after welding, and the of the array substrate after obtaining welding
One testing result；Further, which is sent to correcting device, specifically, first testing result is used for
There are still defects for array substrate after characterizing welding.
It is envisioned that the defects of first testing result is to meet the defect of default defect cause, it is former to preset defect
Because between two signal wires connecting with the pixel electrode in the first pixel region, there are pressure differences；Further, first inspection
It further include the location information of the first pixel region where defect in survey result, location information therein can be with above-described embodiment
The defects of where the first pixel region location information it is identical.
Further, the first testing result can be sent to processing unit by detection device, and processing unit is examined to first
It surveys after result is handled and is sent to correcting device, treatment process therein can be identical as the treatment process in above-mentioned implementation,
This will not be repeated here.
S605 carries out welding again to the defects of the array substrate after welding, until the second testing result is obtained, second
Testing result is used to characterize the array substrate after welding, and there is no defects.
In the present embodiment, after correcting device obtains the first testing result, according to the first pixel where defect therein
The location information in region carries out again the defects of the array substrate after welding using method same with the above-mentioned embodiment
Welding, further, detection device can also carry out defect test to the array substrate after welding again, if wherein further including having
Defect, then correcting device carries out introduced details to array substrate again, until correcting device obtains the second testing result, the second inspection
It surveys the array substrate that result is used to characterize after welding and defect is not present.Correcting device determines that there is no defects in array substrate, repair
It is positive to complete.
The embodiment in S601-S603 in the present embodiment specifically can refer in the S401-S403 in above-described embodiment
Associated description, this is not restricted.
In the present embodiment, the first testing result of the array substrate after obtaining welding, the first testing result is used to characterize molten
There are still defects for array substrate after connecing, welding again are carried out to the defects of the array substrate after welding, until obtaining second
Testing result, the second testing result is used to characterize the array substrate after welding, and there is no defects.The amendment provided in the present embodiment
Mode to be modified the defects of array substrate completely, improves the yield of array substrate.
Further, Fig. 7 is the connection schematic diagram of update the system provided by the invention, as shown in fig. 7, the present invention also provides
A kind of update the system 700, specifically, the update the system 700 includes: correcting device 703, detection device 701 and processing unit
702；Processing unit 702 is connected with correcting device 703, detection device 701 respectively.
Detection device 701, which is used to detect, obtains the first pixel region where the defects of array substrate and defect
Location information, and location information is sent to processing unit 702；Location information includes: the first pixel region in array substrate
Coordinate and the first pixel region coordinate of the through-hole in array substrate, array substrate includes pixel layer and at least two metals
Layer, pixel layer include multiple pixel regions, and each pixel region includes a pixel electrode, each pixel electrode and at least two
Signal wire connection in metal layer, defect are by between two signal wires connecting with the pixel electrode in the first pixel region
What pressure difference generated.
Processing unit 702, for obtaining center of the through-hole of the first pixel region in array substrate according to location information
Coordinate, and location information is sent to correcting device 703, it include the through-hole of the first pixel region in location information in array substrate
On centre coordinate.
Correcting device 703 is for obtaining location information, and according to location information, to the first pixel region, there are pressure differences
Two signal wires carry out welding.Specifically, correcting device 703 is according to location information, to the first pixel region, there are pressure differences
The concrete mode of two signal wires progress weldings is identical as the correcting mode in above-described embodiment and effect, and this will not be repeated here.
Fig. 8 is the structural schematic diagram one of correcting device provided by the invention, as shown in figure 8, the correcting device 800 includes:
Position information acquisition module 801, welded module 802.
Position information acquisition module 801, for obtaining the location information of the first pixel region where defect, defect be by
What the pressure difference between two signal wires connecting with the pixel electrode in the first pixel region generated, there are two signals of pressure difference
Line is respectively the signal wire in the storage capacitance line and second metal layer of the first metal layer.
Welded module 802, for controlling laser welder according to location information, to the first pixel region there are pressure differences
Two signal wires carry out welding.
Correcting device provided in this embodiment is similar with principle and technical effect that above-mentioned modification method is realized, does not make herein
It repeats.
Optionally, Fig. 9 is the structural schematic diagram two of correcting device provided by the invention, as shown in figure 9, the correcting device
800 further include: fusion point determining module 803 and testing result obtain module 804.
Optionally, there are insulating layer between the first metal layer and second metal layer, each pixel region is pre- on the insulating layer
There are through-holes；Location information includes the through-hole of coordinate and first pixel region of first pixel region in array substrate in array
Coordinate on substrate.
Welded module 802, specifically for the coordinate according to the first pixel region in array substrate, in array substrate really
Fixed first pixel region；In presence of the through-hole at coordinate in array substrate, to the first pixel region of the first pixel region
Two signal wires of pressure difference carry out welding.
Optionally, coordinate of the through-hole of the first pixel region in array substrate includes: that the through-hole of the first pixel region exists
The coordinate of center in array substrate.
Welded module 802, specifically for the coordinate of center of the through-hole in the first pixel region in array substrate
Place, to the first pixel region, there are two signal wires of pressure difference to carry out welding.
Optionally, device further include: fusion point determining module；
Fusion point determining module 803 determines fusion point for the coordinate according to center in second metal layer.
Optionally, welded module 802, specifically for the coordinate and fusion point according to center, to the first pixel region
Domain there are two signal wires of pressure difference carry out welding.
Optionally, fusion point determining module 803 is specifically used on vertical direction, by the coordinate of center second
Projected position on metal layer, as fusion point.
Testing result obtains module 804, for obtaining the first testing result of the array substrate after welding, the first detection knot
Fruit is used to characterize the array substrate after welding, and there are still defects；Welding again is carried out to the defects of the array substrate after welding,
Until obtaining the second testing result, the second testing result is used to characterize the array substrate after welding, and there is no defects.
Optionally, there are the signal wires in the second metal layer in two signal wires of pressure difference are as follows: drain line or source electrode line.
Figure 10 is the structural schematic diagram three of correcting device provided by the invention, as shown in Figure 10, the correcting device 1000 packet
It includes: memory 1001 and at least one processor 1002.
Memory 1001, for storing program instruction.
Processor 1002, for being performed the modification method realized in the present embodiment in program instruction, specific implementation is former
Reason can be found in above-described embodiment, and details are not described herein again for the present embodiment.
The correcting device 1000 can also include and input/output interface 1003.
Input/output interface 1003 may include independent output interface and input interface, or integrated input and
The integrated interface of output.Wherein, output interface is used for output data, and input interface is used to obtain the data of input, above-mentioned output
Data be the general designation that exports in above method embodiment, the data of input are the general designation inputted in above method embodiment.
The present invention also provides a kind of readable storage medium storing program for executing, it is stored with and executes instruction in readable storage medium storing program for executing, work as correcting device
At least one processor when executing this and executing instruction, when computer executed instructions are executed by processor, realize above-mentioned implementation
Modification method in example.
The present invention also provides a kind of program product, the program product include execute instruction, this execute instruction be stored in it is readable
In storage medium.At least one processor of correcting device can read this from readable storage medium storing program for executing and execute instruction, at least one
Processor executes this and executes instruction so that correcting device implements the modification method that above-mentioned various embodiments provide.
In several embodiments provided by the present invention, it should be understood that disclosed device and method can pass through it
Its mode is realized.For example, the apparatus embodiments described above are merely exemplary, for example, the division of the unit, only
Only a kind of logical function partition, there may be another division manner in actual implementation, such as multiple units or components can be tied
Another system is closed or is desirably integrated into, or some features can be ignored or not executed.Another point, it is shown or discussed
Mutual coupling, direct-coupling or communication connection can be through some interfaces, the INDIRECT COUPLING or logical of device or unit
Letter connection can be electrical property, mechanical or other forms.
The unit as illustrated by the separation member may or may not be physically separated, aobvious as unit
The component shown may or may not be physical unit, it can and it is in one place, or may be distributed over multiple
In network unit.It can select some or all of unit therein according to the actual needs to realize the mesh of this embodiment scheme
's.
It, can also be in addition, the functional units in various embodiments of the present invention may be integrated into one processing unit
It is that each unit physically exists alone, can also be integrated in one unit with two or more units.Above-mentioned integrated list
Member both can take the form of hardware realization, can also realize in the form of hardware adds SFU software functional unit.
The above-mentioned integrated unit being realized in the form of SFU software functional unit can store and computer-readable deposit at one
In storage media.Above-mentioned SFU software functional unit is stored in a storage medium, including some instructions are used so that a computer
Equipment (can be personal computer, server or the network equipment etc.) or processor (English: processor) execute this hair
The part steps of bright each embodiment the method.And storage medium above-mentioned includes: USB flash disk, mobile hard disk, read-only memory
(English: Read-Only Memory, abbreviation: ROM), random access memory (English: Random Access Memory, letter
Claim: RAM), the various media that can store program code such as magnetic or disk.
In the embodiment of the above-mentioned network equipment or vehicle device end equipment, it should be appreciated that processor can be central processing list
Member (English: Central Processing Unit, referred to as: CPU), it can also be other general processors, Digital Signal Processing
Device (English: Digital Signal Processor, abbreviation: DSP), specific integrated circuit (English: Application
Specific Integrated Circuit, referred to as: ASIC) etc..General processor can be microprocessor or the processor
It is also possible to any conventional processor etc..Hardware handles can be embodied directly in conjunction with the step of method disclosed in the present application
Device executes completion, or in processor hardware and software module combination execute completion.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of modification method is applied to array substrate, the array substrate includes pixel layer, the first metal layer and the second metal
Layer, the pixel layer includes multiple pixel regions, and each pixel region includes a pixel electrode, each pixel electricity
Pole is connect with the signal wire in the first metal layer, the signal wire in the second metal layer respectively, which is characterized in that described
Modification method includes:
Obtain defect where the first pixel region location information, the defect be by with the picture in first pixel region
What the pressure difference between two signal wires of plain electrode connection generated, two signal wires there are pressure difference are respectively first metal
Signal wire in the storage capacitance line and second metal layer of layer；
According to the positional information, control laser welder, to first pixel region there are two signal wires of pressure difference
Carry out welding.
2. the method according to claim 1, wherein being deposited between the first metal layer and the second metal layer
In insulating layer, each pixel region is reserved with through-hole on the insulating layer；The location information includes that first pixel region exists
Coordinate of the through-hole of coordinate and first pixel region in the array substrate in the array substrate；
It is described to control laser welder according to the positional information, two there are pressure difference of first pixel region are believed
Number line carries out welding, comprising:
According to coordinate of first pixel region in the array substrate, first picture is determined in the array substrate
Plain region；
In presence of the through-hole at the coordinate in the array substrate, to first pixel region of first pixel region
Two signal wires of pressure difference carry out welding.
3. according to the method described in claim 2, it is characterized in that, the through-hole of first pixel region is in the array substrate
On coordinate include: center of the through-hole of first pixel region in the array substrate coordinate；
It is described that first pixel region, there are two signal wires of pressure difference to carry out welding, comprising:
First pixel region through-hole at the coordinate of the center in the array substrate, to first pixel
Region there are two signal wires of pressure difference carry out welding.
4. according to the method described in claim 3, it is characterized in that, the second metal layer is located at described on gravity direction
The top of the first metal layer, it is described welding is carried out there are two signal wires of pressure difference to first pixel region before, also
Include:
According to the coordinate of the center, fusion point is determined in the second metal layer；
It is described that first pixel region, there are two signal wires of pressure difference to carry out welding, comprising:
According to the coordinate of the center and the fusion point, to first pixel region there are two signals of pressure difference
Line carries out welding.
5. according to the method described in claim 4, it is characterized in that, the coordinate according to the center, described
Fusion point is determined on two metal layers, comprising:
On vertical direction, by projected position of the coordinate of the center in the second metal layer, as described molten
Contact.
6. the method according to claim 1, wherein it is described to first pixel region there are the two of pressure difference
A signal wire carries out after welding, further includes:
First testing result of the array substrate after obtaining welding, first testing result is for after characterizing the welding
The array substrate there are still defects；
Welding again is carried out to the defects of the array substrate after the welding, until the second testing result is obtained, it is described
Second testing result is used to characterize the array substrate after the welding, and there is no defects.
7. method according to claim 1-6, which is characterized in that in two signal wires there are pressure difference
Signal wire in second metal layer are as follows: drain line or source electrode line.
8. a kind of correcting device characterized by comprising at least one processor and memory；
The memory stores computer executed instructions；
At least one described processor executes the computer executed instructions of the memory storage, so that the correcting device executes
The described in any item methods of claim 1-7.
9. a kind of computer readable storage medium, which is characterized in that be stored with computer on the computer readable storage medium
It executes instruction, when the computer executed instructions are executed by processor, realizes the described in any item methods of claim 1-7.
10. a kind of update the system characterized by comprising correcting device, detection device and processing unit；The processing unit
It is connected respectively with the correcting device, the detection device；
The detection device, which is used to detect, obtains the first pixel region where the defects of array substrate and the defect
Location information, and the location information is sent to processing unit；The location information includes: first pixel region in institute
Coordinate of the through-hole of the coordinate and first pixel region in array substrate in array substrate is stated, the array substrate includes
Pixel layer, the first metal layer and second metal layer, the pixel layer include multiple pixel regions, and each pixel region includes
One pixel electrode, each pixel electrode respectively in the first metal layer signal wire, in the second metal layer
Signal wire connection, the defect is by between two signal wires connecting with the pixel electrode in first pixel region
What pressure difference generated；
The processing unit, for according to location information, obtain the through-hole of first pixel region in array substrate in
Heart coordinate, and the location information is sent to the correcting device, it include first pixel region in the location information
Centre coordinate of the through-hole in array substrate；
The correcting device controls laser welder, to described for obtaining the location information, and according to the positional information
First pixel region there are two signal wires of pressure difference carry out welding.
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Address after: No. 1778, Qinglan Road, Huangjia Street, Shuangliu District, Chengdu, Sichuan 610200 Patentee after: Chengdu BOE Display Technology Co.,Ltd. Country or region after: China Address before: No. 1778, Qinglan Road, Gongxing street, Shuangliu District, Chengdu, Sichuan 610200 Patentee before: CHENGDU ZHONGDIAN PANDA DISPLAY TECHNOLOGY Co.,Ltd. Country or region before: China |