CN109524570A - A kind of organic electroluminescence device of high contrast and preparation method thereof - Google Patents
A kind of organic electroluminescence device of high contrast and preparation method thereof Download PDFInfo
- Publication number
- CN109524570A CN109524570A CN201811600564.3A CN201811600564A CN109524570A CN 109524570 A CN109524570 A CN 109524570A CN 201811600564 A CN201811600564 A CN 201811600564A CN 109524570 A CN109524570 A CN 109524570A
- Authority
- CN
- China
- Prior art keywords
- layer
- deposited
- thin film
- optical thin
- ito substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention discloses a kind of organic electroluminescence device and preparation method thereof of high contrast, and device includes the metal electrode set gradually from inside to outside, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer, ito substrate and optical thin film；Luminescent material identical with the luminescent layer is arranged in the optical thin film, for absorbing the visible light for being less than the wavelength that the luminescent layer issues light.Organic electroluminescence device of the high contrast and preparation method thereof is by using optical thin film identical with emitting layer material, on the basis of guaranteeing that device issues light with high transmittance, absorb other interference light in external environmental light in addition to device issues light, to reduce the interference of environment light, it ensure that high contrast shines, the overall performance of organic electroluminescence device is not influenced, and can be matched with organic electroluminescence device, and the volume of integral device is reduced.
Description
Technical field
The present invention relates to organic electroluminescence device technical fields, send out more particularly to a kind of organic electroluminescence of high contrast
Optical device and preparation method thereof.
Background technique
In recent years, organic electroluminescence device has been widely used in actual production life, it is especially aobvious in illumination
Show that field is already yielded unusually brilliant results, be compared to traditional inorganic electroluminescence device, research, preparation and application have become current
One of research field the most active.Organic electroluminescence device has self-luminous, high-efficient, color saturation, wide viewing angle, response
The advantages that speed is fast, low-temperature characteristics is good currently has been applied in many fields, such as organic electroluminescence device is applied to vapour
On tail-light, preparation is simple light, and face may be implemented and shine, and can preferably incorporate practical application.But organic electroluminescence is sent out
Also inevitably there are many problems in optical device, wherein having a problem in that under the interference for having environment light, organic electroluminescence
The contrast of luminescent device will be greatly reduced.
It is typically employed in when we design high contrast organic electroluminescence device in the past outside luminescent device and configures hood
Method, this method some specific angle configurations hood usually on the outside of luminescent device, and to hood surface into
The coarse processing of row, makes environment light that diffusing reflection occur on its surface, reduces the direct incidence of environment light.Although this method can drop
Low ambient light but can generate certain influence to the transmitting light of device itself in the direct reflection on luminescent device surface, that is, subtract
While few ambient light interference, reduces the performance of device itself, cause organic electroluminescence device in the case where there is ambient light interference
There is a problem of what low contrast shone, and this method will lead to the increase of integral device volume.
Summary of the invention
The object of the present invention is to provide organic electroluminescence devices of a kind of high contrast and preparation method thereof, can reduce
The interference of environment light guarantees that high contrast shines.
To achieve the above object, the present invention provides following schemes:
A kind of organic electroluminescence device of high contrast, including metal electrode, the electronics note set gradually from inside to outside
Enter layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer, ito substrate and optical thin film；
The metal electrode is cathode, for generating electronics；The electron injecting layer is for making the electronics from the gold
Belong to electron transfer layer described in electrode injection；The electron transfer layer is for making the electron-transport to the luminescent layer；The hair
Photosphere is the recombination region of the electrons and holes, the recombination luminescence for carrier；The hole transmission layer is for making the sky
Cave is transmitted to the luminescent layer；The hole injection layer is for making the hole inject the hole transport from the metal electrode
Layer；The ito substrate is substrate, for the optical thin film to be deposited；The optical thin film setting is identical with the luminescent layer
Luminescent material, for absorbing the visible light for being less than the wavelength that the luminescent layer issues light.
Optionally, the optical thin film with a thickness of 200~400nm, the material of the optical thin film includes DCJTB.
Optionally, the electron injecting layer, the electron transfer layer, the luminescent layer, the hole transmission layer and described
The thickness of hole injection layer is 10~40nm；The material of the electron injecting layer includes 8-hydroxyquinoline-lithium；The electronics passes
The material of defeated layer includes 8-hydroxyquinoline aluminium；The material of the luminescent layer includes DCJTB；The material of the hole transmission layer includes
8-hydroxyquinoline aluminium；The material of the hole injection layer includes organic semiconductor N PB.
Optionally, the metal electrode with a thickness of 100~200nm, the material of the metal electrode includes aluminium.
A kind of preparation method of the organic electroluminescence device of high contrast, comprising:
Clean ito substrate；
Optical thin film is deposited in the one side of ito substrate after cleaning, obtains the ito substrate for being vapor-deposited with optical thin film；
The ito substrate for being vapor-deposited with optical thin film be not deposited face be successively deposited hole injection layer, hole transmission layer,
Luminescent layer, electron transfer layer, electron injecting layer and metal electrode obtain the organic electroluminescence device of high contrast.
Optionally, the cleaning ito substrate, specifically includes:
50~100ml of dish washing liquid and deionized water is added in the ito substrate, is cleaned by ultrasonic 80~100min；
The pure deionized water of the ito substrate is continued into 80~100min of ultrasonic cleaning；
The ito substrate acetone is continued into 80~100min of ultrasonic cleaning；
The ito substrate isopropanol is continued into 80~100min of ultrasonic cleaning, the ito substrate after being cleaned.
Optionally, optical thin film is deposited in the one side of the ito substrate after cleaning, obtains being vapor-deposited with optical thin film
Ito substrate specifically includes:
8~12min is toasted to the heat lamp of the ito substrate after cleaning, by the one side and optical thin film of the ito substrate after drying
It is sequentially placed into vacuum evaporation instrument；
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10- 9mbar；
Optical thin film is begun to warm up until reaching the material evaporating temperature of the optical thin film；
Start to be deposited, the evaporation rate and thickness of the material of the optical thin film are controlled using the crystal oscillator of the vacuum evaporation instrument
Degree, the evaporation rate of the material of the optical thin film are 0.1~0.2nm/s, evaporate with a thickness of 200~400nm, are vapor-deposited with
The ito substrate of optical thin film.
Optionally, it is described the ito substrate for being vapor-deposited with optical thin film be not deposited face be successively deposited hole injection layer,
Hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metal electrode obtain the organic electroluminescent of high contrast
Device specifically includes:
The face that is not deposited of the ito substrate for being vapor-deposited with optical thin film is put into vacuum evaporation instrument, and is sequentially placed into sky
The material of cave implanted layer, the material of hole transmission layer, the material of luminescent layer, the material of electron transfer layer and the material of electron injecting layer
The material of material and metal electrode；
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10- 9mbar；
The material of the hole injection layer is heated to evaporating temperature, and the material of the hole injection layer is deposited；Heating institute
The material of hole transmission layer is stated to evaporating temperature, and the material of the hole transmission layer is deposited；Heat the material of the luminescent layer
To evaporating temperature, and the material of the luminescent layer is deposited；The material of the electron transfer layer is heated to evaporating temperature, and institute is deposited
State the material for being electronically entered layer；The material of the electron injecting layer is heated to evaporating temperature, and the electron injecting layer is deposited
Material；The material of the hole injection layer, the material of the hole transmission layer, the hair are controlled by the crystal oscillator of vacuum evaporation instrument
The evaporation rate and thickness of the material of the material of photosphere, the material of the electron transfer layer and the electron injecting layer；The sky
The material of cave implanted layer, the material of the hole transmission layer, the material of the luminescent layer, the material of the electron transfer layer and institute
The evaporation rate for stating the material of electron injecting layer is 0.06~0.12nm/s, the material of the hole injection layer, the hole
The evaporation thickness of the material of the material of transport layer, the material of the luminescent layer and the electron transfer layer is 10~40nm, institute
The evaporation of the material of electron injecting layer is stated with a thickness of 1~5nm；
Continue to heat and be deposited the material of the metal electrode, the crystal oscillator for passing through vacuum evaporation instrument controls the metal electrode
Material evaporation rate and thickness, the evaporation rate of the material of the metal electrode is 0.5~2nm/s, is evaporated with a thickness of 100
~200nm obtains the organic electroluminescence device of high contrast.
The specific embodiment provided according to the present invention, the invention discloses following technical effects: height disclosed by the invention is right
Than the organic electroluminescence device of degree, including set gradually from inside to outside metal electrode, electron injecting layer, electron transfer layer,
Luminescent layer, hole transmission layer, hole injection layer, ito substrate and optical thin film；The metal electrode is cathode, for generating electricity
Son；The electron injecting layer is for making the electronics inject the electron transfer layer from the metal electrode；The electron-transport
Layer is for making the electron-transport to the luminescent layer；The luminescent layer is the recombination region of the electrons and holes, is used for current-carrying
The recombination luminescence of son；The hole transmission layer is for making the hole transport to the luminescent layer；The hole injection layer is used for
The hole is set to inject the hole transmission layer from the metal electrode；The ito substrate is substrate, for the optics to be deposited
Film；Luminescent material identical with the luminescent layer is arranged in the optical thin film, is less than luminescent layer sending light for absorbing
Wavelength visible light.Organic electroluminescence device of high contrast disclosed by the invention and preparation method thereof by using with hair
The identical optical thin film of photosphere material absorbs in external environmental light on the basis of guaranteeing that device issues light with high transmittance
Other interference light in addition to device issues light ensure that high contrast shines, do not influence to reduce the interference of environment light
The overall performance of organic electroluminescence device, and can be matched with organic electroluminescence device, reduce the body of integral device
Product.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structure chart of the organic electroluminescence device embodiment of high contrast of the present invention；
Fig. 2 is the flow chart of the preparation method embodiment of the organic electroluminescence device of high contrast of the present invention；
Fig. 3 is the high contrast of the preparation method embodiment preparation of the organic electroluminescence device of high contrast of the present invention
Red device overall structure diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide organic electroluminescence devices of a kind of high contrast and preparation method thereof, can reduce
The interference of environment light guarantees that high contrast shines.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention will be further described in detail.
Fig. 1 is the structure chart of the organic electroluminescence device embodiment of high contrast of the present invention.Referring to Fig. 1, height comparison
The organic electroluminescence device of degree, including metal electrode 101, the electron injecting layer 102, electron-transport set gradually from inside to outside
Layer 103, luminescent layer 104, hole transmission layer 105, hole injection layer 106, ito substrate 107 and optical thin film 108；
The metal electrode 101 is cathode, for generating electronics；The electron injecting layer 102 for make the electronics from
The metal electrode 101 injects the electron transfer layer 103；The electron transfer layer 103 is for making the electron-transport to institute
State luminescent layer 104；The luminescent layer 104 is the recombination region of the electrons and holes, the recombination luminescence for carrier；The sky
Cave transport layer 105 is for making the hole transport to the luminescent layer 104；The hole injection layer 106 is for making the hole
The hole transmission layer 105 is injected from the metal electrode 101；The ito substrate 107 is substrate, for the optics to be deposited
Film 108；Luminescent material identical with the luminescent layer 104 is arranged in the optical thin film 108, is less than described shine for absorbing
Layer 104 issues the visible light of the wavelength of light.The optical thin film 108 with a thickness of 200~400nm, the optical thin film 108
Thickness cannot it is blocked up otherwise can be light-blocking, excessively thin can not otherwise have good effect, when with a thickness of 200~400nm, institute
Stating optical thin film 108 can be preferable to absorb in external environmental light on the basis of guaranteeing that device issues light with high transmittance
Other interference light in addition to device issues light, while through visible light identical with device sending light in external environmental light, it can
Effectively to increase the contrast that device issues light, guarantee that the high contrast of device shines；The material packet of the optical thin film 108
Include DCJTB ((E) -4- dintrile methylene -2- tert-butyl -6- (1,1,7,7- tetramethyl julolidine vinyl) pyrans, 4-
(Dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-
4H-p yran, C30H35N30)。
The electron injecting layer 102, the electron transfer layer 103, the luminescent layer 104,105 and of the hole transmission layer
The thickness of the hole injection layer 106 is 10~40nm；The material of the electron injecting layer 102 includes 8-hydroxyquinoline-lithium
(Liq)；The material of the electron transfer layer 103 includes 8-hydroxyquinoline aluminium (Alq)；The material of the luminescent layer 104 includes
DCJTB ((E) -4- dintrile methylene -2- tert-butyl -6- (1,1,7,7- tetramethyl julolidine vinyl) pyrans, 4-
(Dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-
4H-p yran, C30H35N30)；The material of the hole transmission layer 105 includes 8-hydroxyquinoline aluminium (Alq)；The hole injection
The material of layer 106 includes organic semiconductor N PB (N, N '-diphenyl-N, N '-(1- naphthalene) -1,1 '-biphenyl -4,4 '-diamines).
The metal electrode 101 with a thickness of 100~200nm, the material of the metal electrode 101 includes aluminium (Al).
Fig. 2 is the flow chart of the preparation method embodiment of the organic electroluminescence device of high contrast of the present invention.Referring to figure
2, the preparation method of the organic electroluminescence device of the high contrast, comprising:
Step 201: cleaning ito substrate；
The step 201 specifically includes:
50~100ml of dish washing liquid and deionized water is added in the ito substrate, is cleaned by ultrasonic 80~100min；
The pure deionized water of the ito substrate is continued into 80~100min of ultrasonic cleaning；
The ito substrate acetone is continued into 80~100min of ultrasonic cleaning；
The ito substrate isopropanol is continued into 80~100min of ultrasonic cleaning, the ito substrate after being cleaned.
Step 202: optical thin film is deposited in the one side of ito substrate after cleaning, obtains the ITO base for being vapor-deposited with optical thin film
Plate；
The step 202 specifically includes:
8~12min is toasted to the heat lamp of the ito substrate after cleaning, by the one side and optical thin film of the ito substrate after drying
It is sequentially placed into vacuum evaporation instrument；
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10- 9mbar；
Optical thin film is begun to warm up until reaching the material evaporating temperature of the optical thin film；
Start to be deposited, the evaporation rate and thickness of the material of the optical thin film are controlled using the crystal oscillator of the vacuum evaporation instrument
Degree, the evaporation rate of the material of the optical thin film are 0.1~0.2nm/s, evaporate with a thickness of 200~400nm, are vapor-deposited with
The ito substrate of optical thin film.
Step 203: hole injection layer, sky is successively deposited in the face that is not deposited of the ito substrate for being vapor-deposited with optical thin film
Cave transport layer, luminescent layer, electron transfer layer, electron injecting layer and metal electrode obtain the organic electroluminescence of high contrast
Part；
The step 203 specifically includes:
The face that is not deposited of the ito substrate for being vapor-deposited with optical thin film is put into vacuum evaporation instrument, and is sequentially placed into sky
The material of cave implanted layer, the material of hole transmission layer, the material of luminescent layer, the material of electron transfer layer and the material of electron injecting layer
The material of material and metal electrode；
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10- 9mbar；
The material of the hole injection layer is heated to evaporating temperature, and the material of the hole injection layer is deposited；Heating institute
The material of hole transmission layer is stated to evaporating temperature, and the material of the hole transmission layer is deposited；Heat the material of the luminescent layer
To evaporating temperature, and the material of the luminescent layer is deposited；The material of the electron transfer layer is heated to evaporating temperature, and institute is deposited
State the material for being electronically entered layer；The material of the electron injecting layer is heated to evaporating temperature, and the electron injecting layer is deposited
Material；The material of the hole injection layer, the material of the hole transmission layer, the hair are controlled by the crystal oscillator of vacuum evaporation instrument
The evaporation rate and thickness of the material of the material of photosphere, the material of the electron transfer layer and the electron injecting layer；The sky
The material of cave implanted layer, the material of the hole transmission layer, the material of the luminescent layer, the material of the electron transfer layer and institute
The evaporation rate for stating the material of electron injecting layer is 0.06~0.12nm/s, the material of the hole injection layer, the hole
The evaporation thickness of the material of the material of transport layer, the material of the luminescent layer and the electron transfer layer is 10~40nm, institute
The evaporation of the material of electron injecting layer is stated with a thickness of 1~5nm；
Continue to heat and be deposited the material of the metal electrode, the crystal oscillator for passing through vacuum evaporation instrument controls the metal electrode
Material evaporation rate and thickness, the evaporation rate of the material of the metal electrode is 0.5~2nm/s, is evaporated with a thickness of 100
~200nm obtains the organic electroluminescence device of high contrast.
Preparation by taking the red device of high contrast as an example to the organic electroluminescence device of high contrast of the present invention below
Method is described in detail.
One, ito substrate is cleaned；
50~100ml of dish washing liquid and deionized water is added in ito substrate, is cleaned by ultrasonic 80~100min；Ito substrate is used
Pure deionized water continues 80~100min of ultrasonic cleaning；Ito substrate acetone is continued into 80~100min of ultrasonic cleaning；It will
Ito substrate isopropanol continues 80~100min of ultrasonic cleaning, the ito substrate after being cleaned.
Two, optical thin film is prepared；
8~12min is toasted to the heat lamp of the ito substrate after cleaning, by the one side of the ito substrate after drying and is only transmitted red
Light (wavelength 550nm~780nm) and DCJTB ((the E) -4- dintrile methylene -2- tert-butyl-for absorbing the light less than 550nm wavelength
6- (1,1,7,7- tetramethyl julolidine vinyl) pyrans, 4- (Dicyanomethylene) -2-tert-butyl-6- (1,
1,7,7-tetramethyljulolidin-4-yl-vinyl) -4H-p yran, C30H35N30) it is sequentially placed into vacuum evaporation instrument
In；Prepare the luminescent material DCJTB that material DCJTB used by optical thin film corresponds to luminescent layer, the luminescent material with luminescent layer
DCJTB is consistent, can be preferable to absorb extraneous ring on the basis of the feux rouges for guaranteeing that luminescent layer issues has high transmittance
Other interference light in the light of border in addition to feux rouges are (since the wave-length coverage of feux rouges is 550nm~780nm, using one layer of DCJTB light
Film is learned, the visible light in addition to feux rouges can be absorbed, it is seen that the wave-length coverage of light is 380~780nm, which can absorb
Less than the light of 550nm wavelength, such as green light), since other interference light (including green light) in addition to feux rouges are all absorbed, filter out
Maximum green light is interfered to feux rouges, the feux rouges in external environmental light enters device inside through optical thin film, with device itself
The feux rouges of sending converges, so that the feux rouges for issuing device has obtained significant reinforcement, ensure that the high contrast of feux rouges shines.
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10- 9mbar；
DCJTB is begun to warm up until reaching the material evaporating temperature of DCJTB；
Start to be deposited, the evaporation rate and thickness of the material of DCJTB controlled using the crystal oscillator of the vacuum evaporation instrument,
The evaporation rate of the material of DCJTB is 0.1~0.2nm/s, evaporates with a thickness of 200~400nm, obtains being vapor-deposited with DCJTB optics
The ito substrate of film.
Three, the red device of whole high contrast is prepared；
The ito substrate for being vapor-deposited with DCJTB optical thin film be not deposited face be successively deposited organic semiconductor N PB (N,
N '-diphenyl-N, N '-(1- naphthalene) -1,1 '-biphenyl -4,4 '-diamines), 8-hydroxyquinoline aluminium (Alq), DCJTB ((E) -4- two
Nitrile methylene -2- tert-butyl -6- (1,1,7,7- tetramethyl julolidine vinyl) pyrans, 4- (Dicyanomethylene) -
2-tert-butyl-6- (1,1,7,7-tetramethyljulolidin-4-yl-vinyl) -4H-p yran, C30H35N30)、
8-hydroxyquinoline aluminium (Alq), 8-hydroxyquinoline-lithium (Liq) and aluminium (Al)；
The face that is not deposited of the ito substrate for being vapor-deposited with optical thin film is put into vacuum evaporation instrument, and is sequentially placed into sky
The material (organic semiconductor NPB) of cave implanted layer, the material (8-hydroxyquinoline aluminium) of hole transmission layer, luminescent layer material
(DCJTB), the material (8-hydroxyquinoline aluminium) of electron transfer layer and the material (8-hydroxyquinoline-lithium) of electron injecting layer and gold
Belong to the material (aluminium) of electrode；
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10- 9mbar；
Organic semiconductor NPB is heated to evaporating temperature, and organic semiconductor N PB is deposited；8-hydroxyquinoline aluminium is heated to steaming
Temperature is sent out, and 8-hydroxyquinoline aluminium is deposited；DCJTB is heated to evaporating temperature, and DCJTB is deposited；Heat 8-hydroxyquinoline aluminium extremely
Evaporating temperature, and 8-hydroxyquinoline aluminium is deposited；8-hydroxyquinoline-lithium is heated to evaporating temperature, and 8-hydroxyquinoline-lithium is deposited；
Organic semiconductor NPB, 8-hydroxyquinoline aluminium, DCJTB, 8-hydroxyquinoline aluminium and 8- are successively controlled by the crystal oscillator of vacuum evaporation instrument
Oxyquinoline-lithium evaporation rate and thickness, evaporation rate are 0.06~0.12nm/s, these materials remove 8-hydroxyquinoline-
With a thickness of 1~5nm, the evaporation thickness of remaining each material is 10~40nm for the evaporation of lithium；Wherein, the steaming of organic semiconductor NPB
Hair is with a thickness of 20~35nm, and the evaporation of 8-hydroxyquinoline aluminium (Alq) is with a thickness of 12~24nm, and doping is deposited 2%~8% wherein
The DCJTB of mass concentration, the technique for adulterating vapor deposition is currently mature technology, i.e. the material (8-hydroxyquinoline aluminium) of hole transmission layer
It adulterates and is deposited with the material (DCJTB) of luminescent layer, then the 8-hydroxyquinoline aluminium (Alq) of 26~33nm thickness is deposited, 1~5nm is thick
8-hydroxyquinoline-lithium (Liq) of degree.
Continue heating and AM aluminum metallization (Al), the evaporation rate and thickness of aluminium (Al) controlled by the crystal oscillator of vacuum evaporation instrument,
The evaporation rate of aluminium (Al) is 0.5~2nm/s, evaporates with a thickness of 100~200nm, obtains the red device of high contrast, the party
The red device overall structure diagram of the high contrast of method preparation is as shown in Figure 3.The red device of the high contrast use with
The identical DCJTB optical thin film of luminescent layer luminescent material has filtered out and has interfered maximum green light to feux rouges, red in external environmental light
Light enters device inside through optical thin film, and the feux rouges issued with device itself converges, so that the feux rouges for issuing device obtains
Significant reinforcement ensure that the high contrast of feux rouges shines, effect highly significant.
The organic electroluminescence device and preparation method thereof of high contrast disclosed by the invention is not limited in above-mentioned implementation
The red device of high contrast and preparation method thereof in example, the evaporation coating method of use is also not limited to vapour deposition method, can be with
It is spin-coating method or print process etc..Organic electroluminescence device of high contrast disclosed by the invention and preparation method thereof can be prepared
The visible devices of various high contrasts can be realized and protect by the way that optical thin film identical with luminescent layer luminescent material is arranged
It demonstrate,proves device and issues light with other interference on the basis of high transmittance, absorbed in external environmental light in addition to device issues light
Light guarantees that the high contrast of device shines, does not influence the globality of organic electroluminescence device to drop the interference of low ambient light
Can, and can be matched with organic electroluminescence device, reduce the volume of integral device.By high contrast disclosed by the invention
Organic electroluminescence device is applied on automobile tail light, and avoiding existing automobile tail light need to additionally increase in the outside of luminescent device
One hood accessory interferes to reduce external environmental light, so that the preparation cost that will lead to improves, integral device volume increases,
The transmitting light of hood shield portions device, the inhomogeneities of each viewing angle contrast's degree.High contrast disclosed by the invention it is organic
Electroluminescent device, external in organic electroluminescence device increase by one layer of optical thin film identical with luminescent layer luminescent material,
For absorbing the visible light for being less than the wavelength that luminescent layer issues light, by using identical with luminescent layer luminescent material optically thin
Film absorbs its in external environmental light in addition to device issues light on the basis of guaranteeing that device issues light with high transmittance
He interferes light, to reduce the interference of environment light, ensure that high contrast shines, does not influence the whole of organic electroluminescence device
Body performance solves the problems, such as that previous organic electroluminescence device contrast under the interference of environment light is low, and can with have
Organic electroluminescence devices matching, reduces the weight and volume of integral device, by the Organic Electricity of high contrast disclosed by the invention
Electroluminescence device is applied in automobile tail light, can reduce interference of the external environmental light to visual observation, and guarantee has tail light device
The wide-angle and high contrast of the part high-quality characteristic such as shine are conducive to mitigate whole it is not necessary that hood is arranged outside luminescent device
The weight and volume of device.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For method disclosed in embodiment
For, since it is corresponding with system disclosed in embodiment, so being described relatively simple, related place is defended oneself referring to Account Dept
It is bright.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (8)
1. a kind of organic electroluminescence device of high contrast, which is characterized in that including the metal electricity set gradually from inside to outside
Pole, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer, ito substrate and optical thin film；
The metal electrode is cathode, for generating electronics；The electron injecting layer is for making the electronics from the metal electricity
The electron transfer layer is injected in pole；The electron transfer layer is for making the electron-transport to the luminescent layer；The luminescent layer
Recombination luminescence for the recombination region of the electrons and holes, for carrier；The hole transmission layer is for passing the hole
Transport to the luminescent layer；The hole injection layer is for making the hole inject the hole transmission layer from the metal electrode；
The ito substrate is substrate, for the optical thin film to be deposited；The optical thin film setting is identical with the luminescent layer to shine
Material, for absorbing the visible light for being less than the wavelength that the luminescent layer issues light.
2. the organic electroluminescence device of high contrast according to claim 1, which is characterized in that the optical thin film
With a thickness of 200~400nm, the material of the optical thin film includes DCJTB.
3. the organic electroluminescence device of high contrast according to claim 1, which is characterized in that the electron injection
The thickness of layer, the electron transfer layer, the luminescent layer, the hole transmission layer and the hole injection layer is 10~
40nm；The material of the electron injecting layer includes 8-hydroxyquinoline-lithium；The material of the electron transfer layer includes 8-hydroxyquinoline
Aluminium；The material of the luminescent layer includes DCJTB；The material of the hole transmission layer includes 8-hydroxyquinoline aluminium；The hole note
The material for entering layer includes organic semiconductor N PB.
4. the organic electroluminescence device of high contrast according to claim 1, which is characterized in that the metal electrode
With a thickness of 100~200nm, the material of the metal electrode includes aluminium.
5. a kind of preparation method of the organic electroluminescence device applied to high contrast described in claim 1, feature exist
In, comprising:
Clean ito substrate；
Optical thin film is deposited in the one side of ito substrate after cleaning, obtains the ito substrate for being vapor-deposited with optical thin film；
The ito substrate for being vapor-deposited with optical thin film be not deposited face be successively deposited hole injection layer, hole transmission layer, shine
Layer, electron transfer layer, electron injecting layer and metal electrode obtain the organic electroluminescence device of high contrast.
6. preparation method according to claim 5, which is characterized in that the cleaning ito substrate specifically includes:
50~100ml of dish washing liquid and deionized water is added in the ito substrate, is cleaned by ultrasonic 80~100min；
The pure deionized water of the ito substrate is continued into 80~100min of ultrasonic cleaning；
The ito substrate acetone is continued into 80~100min of ultrasonic cleaning；
The ito substrate isopropanol is continued into 80~100min of ultrasonic cleaning, the ito substrate after being cleaned.
7. preparation method according to claim 5, which is characterized in that the one side of the ito substrate after cleaning is deposited
Optical thin film obtains the ito substrate for being vapor-deposited with optical thin film, specifically includes:
8~12min is toasted to the heat lamp of the ito substrate after cleaning, successively by the one side of the ito substrate after drying and optical thin film
It is put into vacuum evaporation instrument；
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10-9mbar；
Optical thin film is begun to warm up until reaching the material evaporating temperature of the optical thin film；
Start to be deposited, the evaporation rate and thickness of the material of the optical thin film controlled using the crystal oscillator of the vacuum evaporation instrument,
The evaporation rate of the material of the optical thin film is 0.1~0.2nm/s, evaporates with a thickness of 200~400nm, obtains being vapor-deposited with light
Learn the ito substrate of film.
8. preparation method according to claim 5, which is characterized in that described in the ITO base for being vapor-deposited with optical thin film
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metal is successively deposited in the face that is not deposited of plate
Electrode obtains the organic electroluminescence device of high contrast, specifically includes:
The face that is not deposited of the ito substrate for being vapor-deposited with optical thin film is put into vacuum evaporation instrument, and is sequentially placed into hole note
Enter the material of the material of layer, the material of hole transmission layer, the material of luminescent layer, the material of electron transfer layer and electron injecting layer with
And the material of metal electrode；
The vacuum evaporation instrument is vacuumized, until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5~10-9mbar；
The material of the hole injection layer is heated to evaporating temperature, and the material of the hole injection layer is deposited；Heat the sky
The material of the hole transmission layer is deposited to evaporating temperature in the material of cave transport layer；The material for heating the luminescent layer extremely steams
Temperature is sent out, and the material of the luminescent layer is deposited；The material of the electron transfer layer is heated to evaporating temperature, and the electricity is deposited
The material of sub- input layer；The material of the electron injecting layer is heated to evaporating temperature, and the material of the electron injecting layer is deposited；
The material of the hole injection layer, the material of the hole transmission layer, the luminescent layer are controlled by the crystal oscillator of vacuum evaporation instrument
Material, the electron transfer layer material and the electron injecting layer material evaporation rate and thickness；The hole note
Enter the material and the electricity of the material of layer, the material of the hole transmission layer, the material of the luminescent layer, the electron transfer layer
The evaporation rate of the material of sub- implanted layer is 0.06~0.12nm/s, the material of the hole injection layer, the hole transport
The evaporation thickness of the material of the material of layer, the material of the luminescent layer and the electron transfer layer is 10~40nm, the electricity
The evaporation of the material of sub- implanted layer is with a thickness of 1~5nm；
The material for continuing to heat and be deposited the metal electrode, the material of the metal electrode is controlled by the crystal oscillator of vacuum evaporation instrument
The evaporation rate and thickness of material, the evaporation rate of the material of the metal electrode are 0.5~2nm/s, evaporation with a thickness of 100~
200nm obtains the organic electroluminescence device of high contrast.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811600564.3A CN109524570B (en) | 2018-12-26 | 2018-12-26 | High-contrast organic electroluminescent device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811600564.3A CN109524570B (en) | 2018-12-26 | 2018-12-26 | High-contrast organic electroluminescent device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109524570A true CN109524570A (en) | 2019-03-26 |
| CN109524570B CN109524570B (en) | 2021-03-16 |
Family
ID=65798276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811600564.3A Active CN109524570B (en) | 2018-12-26 | 2018-12-26 | High-contrast organic electroluminescent device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109524570B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071145A (en) * | 2019-04-08 | 2019-07-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and electronic equipment |
| CN111048673A (en) * | 2019-11-22 | 2020-04-21 | 昆山国显光电有限公司 | Display panel and preparation method |
| CN111059512A (en) * | 2019-12-24 | 2020-04-24 | 上海晶合光电科技有限公司 | Automobile tail lamp based on OLED and preparation method thereof |
| CN111982885A (en) * | 2020-07-10 | 2020-11-24 | 绍兴秀朗光电科技有限公司 | Non-contact type film water oxygen transmission performance testing method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1510972A (en) * | 2002-12-12 | 2004-07-07 | ��ʽ����������ʾ�� | Organic El displaying devices |
| CN1866573A (en) * | 2005-05-20 | 2006-11-22 | Lg.菲利浦Lcd株式会社 | Display devices with light absorbing metal nonoparticle layers |
| CN102593366A (en) * | 2003-12-15 | 2012-07-18 | 株式会社半导体能源研究所 | Light-emitting device and electronic devices |
| US20150187857A1 (en) * | 2013-12-27 | 2015-07-02 | Sony Corporation | Display unit and electronic apparatus |
| CN105374844A (en) * | 2014-08-14 | 2016-03-02 | 乐金显示有限公司 | Organic light emitting display device including low reflective panel |
| CN106876601A (en) * | 2015-11-30 | 2017-06-20 | 乐金显示有限公司 | Organic light-emitting display device |
| CN206685389U (en) * | 2017-03-21 | 2017-11-28 | 宸鸿光电科技股份有限公司 | Organic LED display device |
-
2018
- 2018-12-26 CN CN201811600564.3A patent/CN109524570B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1510972A (en) * | 2002-12-12 | 2004-07-07 | ��ʽ����������ʾ�� | Organic El displaying devices |
| CN102593366A (en) * | 2003-12-15 | 2012-07-18 | 株式会社半导体能源研究所 | Light-emitting device and electronic devices |
| CN1866573A (en) * | 2005-05-20 | 2006-11-22 | Lg.菲利浦Lcd株式会社 | Display devices with light absorbing metal nonoparticle layers |
| US20150187857A1 (en) * | 2013-12-27 | 2015-07-02 | Sony Corporation | Display unit and electronic apparatus |
| CN105374844A (en) * | 2014-08-14 | 2016-03-02 | 乐金显示有限公司 | Organic light emitting display device including low reflective panel |
| CN106876601A (en) * | 2015-11-30 | 2017-06-20 | 乐金显示有限公司 | Organic light-emitting display device |
| CN206685389U (en) * | 2017-03-21 | 2017-11-28 | 宸鸿光电科技股份有限公司 | Organic LED display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071145A (en) * | 2019-04-08 | 2019-07-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and electronic equipment |
| CN111048673A (en) * | 2019-11-22 | 2020-04-21 | 昆山国显光电有限公司 | Display panel and preparation method |
| CN111048673B (en) * | 2019-11-22 | 2023-02-07 | 昆山国显光电有限公司 | Display panel and preparation method |
| CN111059512A (en) * | 2019-12-24 | 2020-04-24 | 上海晶合光电科技有限公司 | Automobile tail lamp based on OLED and preparation method thereof |
| CN111982885A (en) * | 2020-07-10 | 2020-11-24 | 绍兴秀朗光电科技有限公司 | Non-contact type film water oxygen transmission performance testing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109524570B (en) | 2021-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109524570A (en) | A kind of organic electroluminescence device of high contrast and preparation method thereof | |
| CN106981583B (en) | Material and method for OLED microcavity and buffer layer | |
| TWI238675B (en) | Organic light-emitting display and its manufacture method | |
| CN101882666B (en) | Organic electroluminescent device | |
| JP6796065B2 (en) | Organic thin film laminate and organic electroluminescence device | |
| TWI552881B (en) | Substrate for organic electronic device and manufacturing method thereof | |
| US20190019971A1 (en) | Luminescent Device and Display Device Using Same | |
| KR20130108026A (en) | Organic light emitting device | |
| Qin et al. | Effects of the morphologies and structures of light-emitting layers on the performance of organic electroluminescent devices | |
| CN103824969B (en) | There is the organic electroluminescence device of multilayer metal compound electrode | |
| WO2018171166A1 (en) | Top-emitting organic light-emitting device and component thereof | |
| CN106384769B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN108417739B (en) | A kind of perovskite light emitting diode and preparation method thereof based on spraying process | |
| CN109980109A (en) | QLED device and preparation method thereof | |
| US10297795B2 (en) | Treatment method of emitting layer raw material in OLED and application | |
| JP2017022063A (en) | Manufacturing method of organic thin film laminate, and manufacturing method of organic electroluminescent element | |
| CN107146854A (en) | A kind of microdisplay on silicon part of perovskite light emitting diode and preparation method thereof | |
| CN105810715B (en) | Flexible display apparatus and preparation method and electronic equipment | |
| JP6984649B2 (en) | Composition for manufacturing electronic devices, manufacturing method of composition for manufacturing electronic devices, manufacturing method of organic thin film and organic thin film | |
| US8916406B2 (en) | Organic electroluminescence device and production method thereof | |
| CN111048672B (en) | Perovskite electroluminescence-based white light LED and preparation method thereof | |
| US7901962B1 (en) | Method for preparing organic light-emitting diode including two light-emitting layers with two solvents | |
| CN106784388B (en) | A kind of high contrast Organic Light Emitting Diode and its design method | |
| KR100755478B1 (en) | Light Emitting Device and Fabrication Method The same and Organic Light Emitting Device Passivation film having Multiple layers | |
| CN106856226B (en) | A kind of light emitting diode with quantum dots device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |