CN109524475B - 薄膜晶体管、其制备方法及显示装置 - Google Patents

薄膜晶体管、其制备方法及显示装置 Download PDF

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CN109524475B
CN109524475B CN201811375295.5A CN201811375295A CN109524475B CN 109524475 B CN109524475 B CN 109524475B CN 201811375295 A CN201811375295 A CN 201811375295A CN 109524475 B CN109524475 B CN 109524475B
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刘宁
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明涉及显示领域，特别涉及一种薄膜晶体管、其制备方法及显示装置。本发明的薄膜晶体管包括位于衬底上的有源层和位于所述衬底和所述有源层之间的遮光金属层，所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内，所述有源层与所述遮光金属层之间设置有第一绝缘隔热层，所述有源层远离所述遮光金属层的一侧设置有第二绝缘隔热层。所述绝缘隔热层可以更好的隔绝热量传导，从而避免有源层因受热引起开启电压发生负漂，从而更好的保证显示质量。

Description

薄膜晶体管、其制备方法及显示装置
技术领域
本发明涉及显示领域，特别涉及一种薄膜晶体管、其制备方法及显示装置。
背景技术
顶栅型的薄膜晶体管(TFT)具有短沟道的特点，所以其开态电流Ion得以有效提升，因而可以显著提升显示效果并且能有效降低功耗。而且顶栅型TFT的栅极与源漏极重叠面积小，因而产生的寄生电容较小，所以发生栅极和漏极短路等不良的可能性也降低。由于顶栅型的薄膜晶体管具有上述显著优点，所以越来越受到人们的关注。
为了防止外界光线对顶栅型的薄膜晶体管有源层的影响，一般在有源层的正下方设置有遮光金属层。但是，在有源层上形成其他膜层时，通常采用高温沉积和退火，由于遮光金属层的传热效率较高，因此热量迅速传导至有源层；若有源层采用金属氧化物材料，那么，有源层受热后，其中的氧就容易扩散出来，导致薄膜晶体管的开启电压出现负漂。负漂后的电压为-5V至-1V。
AMOLED产品电路设计中，经常采用3T1C结构。驱动薄膜晶体管设置有遮光金属层，因此其比开关薄膜晶体管和补偿薄膜晶体管容易出现开启电压负漂，导致显示面板中各个薄膜晶体管开启电压调整方向的不同步，影响显示质量。
发明内容
为了解决上述问题，本发明提供一种薄膜晶体管、其制备方法及显示装置，所述薄膜晶体管可以避免有源层由于过度受热产生的开启电压负漂，从而保证显示质量。
本发明提供了一种薄膜晶体管，包括位于衬底上的有源层和位于所述衬底和所述有源层之间的遮光金属层，所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内，所述有源层与所述遮光金属层之间设置有第一绝缘隔热层，所述有源层远离所述遮光金属层的一侧设置有第二绝缘隔热层。
优选地，所述第一绝缘隔热层和第二绝缘隔热层的热导率低于100mW/mK。
优选地，所述第一绝缘隔热层和第二绝缘隔热层均由酚醛树脂和二氧化硅的复合材料制成。
优选地，所述有源层与所述遮光金属层之间的第一绝缘隔热层复用为缓冲层。
优选地，所述有源层远离所述遮光金属层一侧的第二绝缘隔热层复用为栅绝缘层。
优选地，所述缓冲层的厚度为
Figure BDA0001870569650000021
优选地，所述栅绝缘层的厚度为
Figure BDA0001870569650000022
本发明提供了一种薄膜晶体管的制备方法，包括形成位于衬底上的有源层和位于所述衬底和所述有源层之间的遮光金属层，所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内，还包括：
在所述有源层与所述遮光金属层之间形成第一绝缘隔热层，
在所述第一绝缘隔热层表面形成有源层；
在所述有源层表面形成第二绝缘隔热层。
优选地，所述薄膜晶体管的制备方法具体为：
制备衬底；
在所述衬底上形成遮光金属层；
在所述遮光金属层表面形成复用为缓冲层的第一绝缘隔热层；
在所述缓冲层上形成有源层；所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内；
在所述有源层表面形成复用为栅绝缘层的第二绝缘隔热层；
形成层间介质层；
形成源极和漏极，得到薄膜晶体管。
优选地，利用绝缘隔热材料在所述遮光金属层表面形成缓冲层具体为：
将酚醛树脂和二氧化硅的复合材料旋涂或者喷涂于所述遮光金属层表面，经过干燥，形成复用为缓冲层的第一绝缘隔热层；
利用绝缘隔热材料在所述有源层上形成栅绝缘层具体为；将酚醛树脂/二氧化硅的复合材料旋涂或者喷涂于所述有源层表面，经过干燥，形成复用为栅绝缘层的第二绝缘隔热层。
优选地，所述干燥时的温度为100～200℃，所述干燥的时间为30～120分钟。
本发明提供了一种显示基板，包括上述技术方案所述的薄膜晶体管。
优选地，以上述技术方案所述薄膜晶体管作为驱动薄膜晶体管，而且还包括开关薄膜晶体管和补偿薄膜晶体管，所述开关薄膜晶体管和补偿薄膜晶体管的有源层两侧的膜层均由绝缘隔热材料制成。
本发明还提供了一种显示装置，其特征在于，包括上述技术方案所述的显示基板。
与现有技术相比，本发明将顶栅型驱动薄膜晶体管的有源层两侧设置绝缘隔热层，所述绝缘隔热层可以更好的隔绝热量传导，从而避免有源层因受热引起开启电压发生负漂。进一步的，当AMOLED电路中包括3T1C结构时，将驱动薄膜晶体管的有源层两侧设置绝缘隔热层后，避免了有源层因受热引起开启电压发生负漂，从而使驱动薄膜晶体管与开关晶体管及补偿晶体管开启电压同步性较高，从而更好的保证显示质量。
附图说明
图1表示本发明一实施例制备的薄膜晶体管的结构示意图；
图2表示本发明另一实施例制备的薄膜晶体管的结构示意图；
图3表示本发明又一实施例制备的薄膜晶体管的结构示意图；
图4表示一种顶栅型AMOLED产品中的电路图；
图示注解：
101为衬底，102为遮光金属层，103为缓冲层，104为第一绝缘隔热层，105为有源层中的沟道，106为有源层，107为第二绝缘隔热层，108为栅绝缘层，109为栅极，110为层间介质层、111为源漏极,112为非金属钝化层；
DATA为数据线；G1为第一扫描线；G2为第二扫描线；VDD为电源电压漏极；VSS为电源电压源极；sense为补偿线；T1，T2，T3为薄膜晶体管；Cst为电容。
具体实施方式
为了进一步理解本发明，下面结合实施例对本发明具体实施方案进行描述，但是应当理解，这些描述只是为进一步说明本发明的特征和优点，而不是对本发明的限制。
本发明的实施例公开了一种薄膜晶体管，包括位于衬底上的有源层和位于所述衬底和所述有源层之间的遮光金属层，所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内，所述有源层与所述遮光金属层之间设置有第一绝缘隔热层，所述有源层远离所述遮光金属层的一侧设置有第二绝缘隔热层。
对于设置有遮光金属层的薄膜晶体管来说，遮光金属层导热速度快，造成有源层受热后发生性能变化，特别是金属氧化物材料的有源层受热后，其中的氧容易扩散出来，引起开启电压负漂。
本发明在有源层的两侧均设置绝缘隔热层，具体为：所述有源层与所述遮光金属层之间设置有第一绝缘隔热层，所述有源层远离所述遮光金属层的一侧设置有第二绝缘隔热层。
如图1所示，薄膜晶体管的结构包括依次设置的：衬底101，遮光金属层102，缓冲层103，第一绝缘隔热层104，有源层106及有源层中的沟道105，第二绝缘隔热层107，栅绝缘层108，栅极109，层间介质层110、源漏极111。
优选地，所述第一绝缘隔热层和第二绝缘隔热层的热导率低于100mW/mK，两者可以由相同的材料制成，也可由不同材料制成。优选地，两者采用相同材料制成。更优选地，所述第一绝缘隔热层和第二绝缘隔热层均由酚醛树脂和二氧化硅的复合材料制成。申请人通过大量实验筛选适用于薄膜晶体管中的绝缘隔热材料，发现酚醛树脂和二氧化硅的复合材料具有优异的隔热性能，且该材料本身不会对薄膜晶体管造成不良影响，与薄膜晶体管的其他膜层具有很好的相容性。所述酚醛树脂和二氧化硅的复合材料以壳聚糖为基本模板，加入苯酚、甲醛和正硅酸乙酯，然后发生聚合反应，反应结束后分离提纯，烘干后获得酚醛树脂和二氧化硅的复合绝缘材料。所述酚醛树脂和二氧化硅的复合材料酚醛树脂纳米纤维和二氧化硅纳米纤维相互纠缠交叠在一起，具有很好的物理韧性。其结构稳定，最低热导率可达24mW/mK，耐火性能良好。为了简化制作流程，优选地，所述有源层与所述遮光金属层之间的第一绝缘隔热层复用为缓冲层。所述缓冲层是位于遮光金属层和有源层之间具有绝缘作用的膜层，其作用是：将有源层与遮光金属层隔绝开，并且有效阻挡衬底基板中的各种金属离子杂质向有源层扩散。所述缓冲层的厚度优选为
Figure BDA0001870569650000051
所述有源层远离所述遮光金属层一侧的第二绝缘隔热层复用为栅绝缘层。所述栅绝缘层的厚度优选为
Figure BDA0001870569650000052
即：如图2所示，所述薄膜晶体管依次包括以下结构：衬底101、遮光金属层102、缓冲层103、有源层106及有源层中的沟道105、栅绝缘层108、栅极109、层间介质层110、源漏极111。
如图3所示，所述薄膜晶体管还可以设置非金属钝化层112。
本发明还公开了一种薄膜晶体管的制备方法，包括形成位于衬底上的有源层和位于所述衬底和所述有源层之间的遮光金属层，所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内，还包括：
在所述有源层与所述遮光金属层之间形成第一绝缘隔热层，
在所述第一绝缘隔热层表面形成有源层；
在所述有源层表面形成第二绝缘隔热层。
具体地，将绝缘隔热材料溶于有机溶剂中，旋涂或者喷涂于所述遮光金属层表面，经过干燥，形成第一绝缘隔热层；
在所述第一绝缘隔热层表面形成有源层；
将绝缘隔热材料溶于有机溶剂中，旋涂或者喷涂于所述有源层表面，经过干燥，形成第二绝缘隔热层。
优选地，所述第一绝缘隔热层复用为缓冲层，所述第二绝缘隔热层复用为栅绝缘层；则所述薄膜晶体管的制备方优选为：
S1：制备衬底；
S2：在所述衬底上形成遮光金属层；
S3：在所述遮光金属层表面形成复用为缓冲层的第一绝缘隔热层；
优选地，所述第一绝缘隔热层的热导率低于100mW/mK，更优选地，所述第一绝缘隔热层由酚醛树脂和二氧化硅的复合材料制成。
所述步骤S3具体为：
将酚醛树脂和二氧化硅的复合材料旋涂或者喷涂于所述遮光金属层表面，经过干燥，形成复用为缓冲层的第一绝缘隔热层。
其中，若选用喷涂，优选采用线性喷涂，喷头移动速度约为100-300mm/s。
所述干燥时的温度优选为100～200℃，所述干燥的时间优选为30～120分钟。
S4：在所述缓冲层上形成有源层；所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内；
S5：在所述有源层表面形成复用为栅绝缘层的第二绝缘隔热层；
优选地，第二绝缘隔热层的热导率低于100mW/mK，更优选地，所述第二绝缘隔热层由酚醛树脂和二氧化硅的复合材料制成。
所述步骤S5具体为：
利用绝缘隔热材料在所述有源层上形成栅绝缘层具体为；将酚醛树脂/二氧化硅的复合材料旋涂或者喷涂于所述有源层表面，经过干燥，形成复用为栅绝缘层的第二绝缘隔热层。
其中，若选用喷涂，优选采用线性喷涂，喷头移动速度约为100-300mm/s。所述干燥时的温度优选为100～200℃，所述干燥的时间优选为30～120分钟。
S6：形成层间介质层；
S7：形成源极和漏极，得到薄膜晶体管。
所述酚醛树脂和二氧化硅的复合材料制成的第一绝缘隔热层及第二绝缘隔热层，可以被干刻工艺常用的等离子气体CF4和O2进行刻蚀，所以可以顺利的形成层间介质层(ILD)孔、连接孔(CNT)、过孔(Via)等各种过孔以进行各种后续金属搭接，从而形成完整的TFT制备工艺。采用该新型绝缘材料可以显著提升薄膜晶体管的特性稳定性，从而提高显示面板的显示质量。
本发明的实施例公开了一种显示基板，包括上述技术方案所述的薄膜晶体管。
当所述显示基板的电路设计中，采用3T1C结构时，如图4所示，具有3个薄膜晶体管和1个电容器时，优选地，以上述技术方案所述的薄膜晶体管作为驱动薄膜晶体管。为了使显示基板整体制作步骤简化，开关薄膜晶体管和补偿薄膜晶体管的有源层两侧的膜层均由绝缘隔热材料制成。优选地，所述绝缘隔热材料的热导率低于100mW/mK。
当所述驱动薄膜晶体管的第一绝缘隔热层复用为缓冲层，第二绝缘隔热层复用为栅绝缘层时，所述开关薄膜晶体管的两侧的膜层也分别复用为缓冲层和栅绝缘层，且所述补偿薄膜晶体管的两侧的膜层也分别复用为缓冲层和栅绝缘层。
本发明的实施例还公开了一种显示装置，包括上述技术方案所述的显示基板。
实验结果显示，本发明改进后的薄膜晶体管的开启电压为0V附近，不会发生负漂。
以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这些改进和修饰也落入本发明权利要求的保护范围内。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (12)

1.一种金属氧化物薄膜晶体管，包括位于衬底上的有源层，所述有源层为金属氧化物半导体层，和位于所述衬底和所述有源层之间的遮光金属层，所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内，其特征在于，所述有源层与所述遮光金属层之间设置有与所述有源层和所述遮光金属层相接触的第一绝缘隔热层，所述有源层远离所述遮光金属层的一侧设置有第二绝缘隔热层；
所述第一绝缘隔热层和所述第二绝缘隔热层均由酚醛树脂和二氧化硅的复合材料制成；
所述第一绝缘隔热层和所述第二绝缘隔热层的热导率均为24～100mW/mK范围内。
2.根据权利要求1所述的薄膜晶体管，其特征在于，所述有源层与所述遮光金属层之间的第一绝缘隔热层复用为缓冲层。
3.根据权利要求1所述的薄膜晶体管，其特征在于，所述有源层远离所述遮光金属层一侧的第二绝缘隔热层复用为栅绝缘层。
4.根据权利要求2所述的薄膜晶体管，其特征在于，所述缓冲层的厚度为
Figure FDA0003464868700000011
5.根据权利要求3所述的薄膜晶体管，其特征在于，所述栅绝缘层的厚度为
Figure FDA0003464868700000012
6.一种金属氧化物薄膜晶体管的制备方法，包括形成位于衬底上的有源层，所述有源层为金属氧化物半导体层，和位于所述衬底和所述有源层之间的遮光金属层，所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内，其特征在于，还包括：
在所述有源层与所述遮光金属层之间形成第一绝缘隔热层；
在所述第一绝缘隔热层表面形成有源层；
在所述有源层表面形成第二绝缘隔热层；
所述第一绝缘隔热层和所述第二绝缘隔热层均由酚醛树脂和二氧化硅的复合材料制成；
所述第一绝缘隔热层和所述第二绝缘隔热层的热导率均为24～100mW/mK范围内。
7.根据权利要求6所述的制备方法，其特征在于，所述薄膜晶体管的制备方法具体为：
制备衬底；
在所述衬底上形成遮光金属层；
在所述遮光金属层表面形成复用为缓冲层的第一绝缘隔热层；
在所述缓冲层上形成有源层；所述有源层在所述衬底上的正投影落入所述遮光金属层在所述衬底上的正投影内；
在所述有源层表面形成复用为栅绝缘层的第二绝缘隔热层；
形成层间介质层；
形成源极和漏极，得到薄膜晶体管。
8.根据权利要求7所述的制备方法，其特征在于，利用绝缘隔热材料在所述遮光金属层表面形成缓冲层具体为：
将酚醛树脂和二氧化硅的复合材料旋涂或者喷涂于所述遮光金属层表面，经过干燥，形成复用为缓冲层的第一绝缘隔热层；
利用绝缘隔热材料在所述有源层上形成栅绝缘层具体为： 将酚醛树脂和 二氧化硅的复合材料旋涂或者喷涂于所述有源层表面，经过干燥，形成复用为栅绝缘层的第二绝缘隔热层。
9.根据权利要求8所述的制备方法，其特征在于，所述干燥时的温度为100～200℃，所述干燥的时间为30～120分钟。
10.一种显示基板，其特征在于，包括如权利要求1-5中任一项所述的薄膜晶体管。
11.根据权利要求10所述的显示基板，其特征在于，以如权利要求1-5中任一项所述薄膜晶体管作为驱动薄膜晶体管，还包括开关薄膜晶体管和补偿薄膜晶体管，所述开关薄膜晶体管和补偿薄膜晶体管的有源层两侧的膜层均由绝缘隔热材料制成。
12.一种显示装置，其特征在于，包括权利要求10或11所述的显示基板。
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