CN109524423A - It can pretend deformable intelligent visible light near infrared detector and preparation method thereof - Google Patents
It can pretend deformable intelligent visible light near infrared detector and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000004528 spin coating Methods 0.000 claims abstract description 14
- 229920005570 flexible polymer Polymers 0.000 claims abstract description 12
- 239000002861 polymer material Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 21
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 13
- 229920000431 shape-memory polymer Polymers 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229920000704 biodegradable plastic Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 229920005573 silicon-containing polymer Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000003331 infrared imaging Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000011896 sensitive detection Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- -1 Dimethyl siloxane Chemical class 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
One kind can pretend deformable intelligent visible light near infrared detector, comprising: polymeric substrates, detector unit array, and the graphene interconnecting electrode for connecting the detector cells in detector unit array；The preparation method of the detector includes: step A: growth epitaxial wafer；Step B: mesa detector cells are prepared with the epitaxial wafer that step A is grown；Step C: the detector surface spin coating flexible polymer material prepared by step B；Step D: detector surface graphene spin coating after the completion of step C is simultaneously graphical, and graphene interconnecting electrode is made；Step E: the uncured flexible polymer material of detector surface spin coating after the completion of step D；Step F: the three-dimensional shape of the polymeric substrates of pre- memory detector；And step G: the step E detector completed is sticked in into step F and completes the preparation for completing the detector in the polymeric substrates for the detector remembered in advance.
Description
Technical field
This disclosure relates to which infrared acquisition and imaging field more particularly to one kind can pretend deformable intelligent visible light to close
Infrared detector and preparation method thereof.
Background technique
Any object all can discharge infra-red radiation to the external world at any time, but human eye does not respond to infra-red radiation, institute
Infra-red radiation must be perceived and detected using special instrument with us, and infrared detector is exactly this instrument to come into being
Device.The imperceptible infrared radiation signal of human eye can be changed into other physical quantitys that can be measured by infrared detector.Its
Night vision imaging, astronomical observation, Industry Control, medical treatment, the various fields such as communication, which have, to be extremely widely applied.
Current visible light is mainly all based on semiconductor photosensitive material to infrared photoelectric detector and is prepared, material and
Structure all belongs to rigidity, can not deformation.As the requirement to performances such as detection accuracy, areas imagings is constantly promoted, infrared detector
Develop to more denseization, comprehensive, flexibility direction.Especially in the side such as ecological protection, military and national defense, aerospace
Face, the requirement to omnidirectional detection performance most can be significant: to the track protection of endangered wildlife, in complicated battlefield surroundings
Self camouflage and slip into comprehensive real-time in investigation, cosmic space and observe etc..
It is certain although traditional infrared detector can monitor remote object real-time tracking by optical system
Monitoring range is limited in degree, and does not adapt to complex environment variation.In order to realize while guaranteeing device performance,
Sensitive detection parts funtion part is miniaturized and is fixed on flexible matrix material according to a series of design of mechanical structures, these
Exquisite design is so that the sensitive detection parts of rigidity are without changing material itself (electric property for keeping its excellent) originally
Under the conditions of, it realizes the flexibility under macro-scale, and the real-time deformation of energy under different environmental stimulus, realizes good concealment
With optimal monitoring effect.
Disclosure
(1) technical problems to be solved
Based on the above issues, present disclose provides one kind can pretend deformable intelligent visible light near infrared detector and
Preparation method, to alleviate, the limitation of existing infrared detector real time imagery, technique preparation is complicated, deformation is single, environment is suitable
It should be able to the technical problems such as power difference.
(2) technical solution
The disclosure, which provides one kind, can pretend deformable intelligent visible light near infrared detector, comprising: polymeric substrates,
Shape-memory polymer is made；Detector unit array is formed by multiple detector cells by array arrangement, is set to described poly-
On polymer substrates；And graphene interconnecting electrode, graphene interconnection conducting wire is made, for connecting in the detector unit array
Detector cells.
In the embodiments of the present disclosure, the shape-memory polymer includes: polymethyl methacrylate or ethylene and acetic acid
Vinyl ester copolymers.
In the embodiments of the present disclosure, the detector cells in the detector unit array are mesa, by epitaxial wafer system
Standby to form, detector cells include upper and lower table top and mesa surfaces are respectively arranged with upper and lower electrode.
In the embodiments of the present disclosure, the structure of the epitaxial wafer includes: P contact layer and cap layers from top to bottom, and material is made
It include: InP, InGaAsP or InGaAs；Light absorbing layer, it includes: InGaAs that material, which is made,；N contact layer, it includes: N that material, which is made,
Type adulterates InP, InGaAsP or InGaAs；Sacrificial layer, it includes: InGaAs or InGaAsP that material, which is made,；And substrate, material is made
Material includes: InP.
In the embodiments of the present disclosure, the upper and lower electrode of the detector cells include: Au, Ti, Pt, Pd, Cr, Zn or
The single-layer electrodes of AuGeNi alloy or the composite layer electrode that they are combined.
In the embodiments of the present disclosure, the shape of the graphene interconnection conducting wire of the graphene interconnecting electrode includes: waveform
Line, S-shaped line divide shape or self similarity figure.
In the embodiments of the present disclosure, the graphene interconnection conducting wire of the graphene interconnecting electrode is single layer, horizontal, vertical two sides
To cabling, the signal output of each detector cells is realized.
In the embodiments of the present disclosure, the preparation method includes: step A: growth epitaxial wafer, in epitaxial wafer substrate in growth
The sacrificial layer for having high corrosion selection ratio with N contact layer is added between N contact layer；Step B: the epitaxial wafer grown with step A
Mesa detector cells are prepared, and it is made to arrange along horizontal, longitudinal direction in two-dimensional array；Step C: prepared by step B
Detector surface spin coating flexible polymer material, and metal interconnection conducting wire is set between the detector cells；Step D:
Detector surface graphene spin coating after the completion of step C is simultaneously graphical, and the graphene interconnection formed between detector cells is led
Graphene interconnecting electrode is made in line；Step E: the uncured flexible polymer material of detector surface spin coating after the completion of step D
Material；Step F: the three-dimensional shape of the polymeric substrates of pre- memory detector；And step G: by the complete flexible polymer of step E spin coating
The detector of material sticks in step F and completes in the polymeric substrates for the detector remembered in advance, and completion can be pretended deformable
Intelligent visible light near infrared detector preparation.
In the embodiments of the present disclosure, the upper table surface of the detector cells is etched into the upper table of N contact layer in step B
Face, following table etch into the lower surface of sacrificial layer.
In the embodiments of the present disclosure, the flexible polymer material of institute's spin coating includes: polyimides, gathers in step C and step E
Dimethyl siloxane or biodegradable plastic.
(3) beneficial effect
It can be seen from the above technical proposal that the disclosure can pretend deformable intelligent visible light near infrared detector and
Preparation method at least has the advantages that one of them or in which a part:
(1) intelligent deformation and right is realized not by Mechanical course, and under the premise of the high performance such as guarantee image quality, precision
The comprehensive real time monitoring of environment has stronger concealment；
(2) detection to two kinds of wave bands of visible light and near-infrared may be implemented, i.e., it can be to environment on daytime and night
Or target real-time monitoring；
(3) easy to operate on preparation section, the three-dimensional shape of detector can be arbitrarily devised, has to complex environment
Superpower adaptability is expected to that detector is made to realize miniaturization, portability, low-power consumption, stealthyization, and provides more for infrared imaging system
High image quality and more design freedoms.
Detailed description of the invention
Fig. 1 is that the embodiment of the present disclosure can pretend deformable intelligent visible light to the signal of near infrared detector planar structure
Figure.
Fig. 2 can pretend deformable intelligent visible light for the embodiment of the present disclosure and prepare detector list near infrared detector
The structural schematic diagram of epitaxial wafer used in member.
Fig. 3 is that the embodiment of the present disclosure illustrates to pretend by taking thousand paper crane shapes as an example deformable intelligent visible light to near-infrared
The operation principle schematic diagram of detector.
Fig. 4 can pretend deformable intelligent visible light near infrared detector preparation method process for the embodiment of the present disclosure and show
It is intended to.
[embodiment of the present disclosure main element symbol description in attached drawing]
1-P contact layer and cap layers；2- light absorbing layer；3-N contact layer；4- sacrificial layer；5- substrate；
10- polymeric substrates；20- detector cells；30- graphene interconnecting electrode.
Specific embodiment
It can pretend deformable intelligent visible light near infrared detector and preparation method thereof present disclose provides one kind, institute
Stating detector may be implemented detection to two kinds of wave bands of visible light and near-infrared, can not be by Mechanical course, and guarantee to be imaged
Intelligent deformation is realized under the premise of the high performance such as quality, precision and to the comprehensive real time monitoring of environment, there is stronger concealment；
Easy to operate on preparation section, the three-dimensional shape of detector can be arbitrarily devised, has the superpower adaptability to complex environment,
It is expected to make detector to realize miniaturization, portability, low-power consumption, stealthyization, and provides for infrared imaging system higher at image quality
Amount and more design freedoms.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
In the embodiments of the present disclosure, deformable intelligent visible light can be pretended near infrared detector by providing one kind, and Fig. 1 is
The planar structure schematic diagram of the detector, as shown in Figure 1, the detector includes:
Polymeric substrates 10, shape-memory polymer (Shap Memory Polymer, abbreviation SMP) are made；
Detector unit array is arranged by two-dimensional array by multiple detector cells 20, is set to the polymer
In substrate 10；
Graphene interconnecting electrode 30 connects the detector cells 20 in the detector unit array along horizontal, longitudinal direction.
The shape-memory polymer is to be capable of fixing temporary shapes, and pierce in the external world under certain external force and stimulation
(such as: heat, electricity, light, chemical co-ordination) polymer of permanent shape is restored under swashing.
The shape-memory polymer includes: polymethyl methacrylate or ethylene and vinyl acetate co-polymer.
Each detector cells 20 in the detector unit array are processed by epitaxial wafer, and Fig. 2 is the detection
The structural schematic diagram of epitaxial wafer used in device unit 20, as shown in Fig. 2, the structure of the epitaxial wafer includes: from top to bottom
P contact layer and cap layers 1, it includes: InP, InGaAsP or InGaAs that material, which is made,；；
Light absorbing layer 2, it includes: InGaAs that material, which is made,；
N contact layer 3, it includes: n-type doping InP, InGaAsP or InGaAs that material, which is made,；
Sacrificial layer 4, it includes: InGaAs or InGaAsP that material, which is made,；And
Substrate 5, it includes: InP that material, which is made,.
Using passivation, photoetching, wet etching, grinding and polishing, etc. technologies, mesa band is prepared since the epitaxial wafer
There are the detector cells of upper/lower electrode.
In the embodiments of the present disclosure, by taking InGaAs/InP short-wave infrared detector as an example.Epitaxial wafer uses Organometallic
Learn vapor deposition MOCVD or the growth of molecular beam epitaxy MBE equipment.
In the embodiments of the present disclosure, Fig. 3 is that explanation can pretend deformable intelligent visible light extremely by taking thousand paper crane shapes as an example
The operation principle schematic diagram of near infrared detector, as shown in figure 3, plane shape-memory polymer substrate, under the conditions of 90 DEG C,
Make polymeric substrates that mechanical deformation occur by external force, become thousand paper crane shapes, then cool to 22 DEG C, it is pre- to carry out shape
Memory is kept for a period of time；Then it is placed under the conditions of 90 DEG C, polymeric substrates can restore plane automatically.
On a polymeric substrate by detector unit array bonding, and under the conditions of being placed on 90 DEG C kept for a period of time, so
After be cooled to 22 DEG C, polymeric substrates with detector unit array can it is automatic deformation occurs, become thousand paper crane shapes, until
This, prepared by thousand paper cranes of the surface with detector unit array completes；If environment temperature changes between 90 DEG C and 22 DEG C, this
Kind sensitive detection parts can change between plane and thousand paper crane shapes, can be completed in whole process without external force.
In the embodiments of the present disclosure, deformable intelligent visible light can be pretended near infrared detector preparation by also providing one kind
Method, Fig. 4 pretend deformable intelligent visible light near infrared detector preparation method flow diagram for described, such as scheme
Shown in 4, the preparation method, comprising:
Step A: epitaxial wafer is grown, being added between epitaxial wafer substrate 5 and N contact layer 3 in growth has height with N contact layer 3
The sacrificial layer 4 of corrosion selection ratio；
Step B: preparing mesa detector cells 20 with the epitaxial wafer that step A is grown, and makes it along horizontal, longitudinal direction
It arranges in two-dimensional array；
Wherein, chemical wet etching, metal growth, the semiconductor preparing process such as passivating film growth, by the detector list are utilized
The upper table surface of member etches into the upper surface of N contact layer 3, and following table etches into the lower surface of sacrificial layer 4, and in upper and lower table top table
Face prepares (P) electrode (N) electrode under respectively, and forms Ohmic contact.
The metal for forming Ohmic contact includes: Au, Ti, Pt, Pd, Cr, the single layer of Zn or AuGeNi alloy or they
Combined composite layer.
Step C: the detector surface spin coating flexible polymer material prepared by step B, and in the detector cells
Metal interconnection conducting wire is set between 20；
The graphical P for exposing detector cells, N electrode aperture during this；
The metal interconnection wire shape includes: the figures such as waveform line, S-shaped line, point shape or self similarity；
The flexible polymer material shields to metal interconnection conducting wire.
Step D: detector surface graphene spin coating after the completion of step C is simultaneously graphical, formed detector cells it
Between graphene interconnect conducting wire, graphene interconnecting electrode is made；
The graphene interconnects wire growth flexible polymer material surface described in step C.
The graphene interconnection conducting wire is single layer, transverse and longitudinal both direction cabling, finally in a manner of similar wordline and bit line
Realize the signal output of single detector unit.
The graphene interconnection wire shape includes: the figures such as waveform line, S-shaped line, point shape or self similarity；
The graphene interconnection conducting wire, which is finally drawn out on the outside of detector unit array, forms interface.
Step E: the uncured flexible polymer material of detector surface spin coating after the completion of step D；
The extending flexible material is used in combination to protect the interconnection conducting wire between detector front and detector cells
It is bonded in flexible substrates.
The flexible polymer material includes: polyimides, dimethyl silicone polymer (PDMS) or biodegradable plastic
(Ecoflex) etc..
Step F: the three-dimensional shape of the polymeric substrates of pre- memory detector；
Under the conditions ofs certain temperature, intensity of illumination etc., shape-memory polymer substrate occurs by external force mechanical
Deformation is remembered three-dimensional shape in advance.
Step G: the detector of the complete flexible polymer material of step E spin coating is sticked in into the spy that step F completes to remember in advance
It surveys in the polymeric substrates of device, completes that the preparation of deformable intelligent visible light near infrared detector can be pretended.
Deformable intelligent visible light to the near infrared detector original-shape that pretends of disclosure preparation is plane, can
As needed to be remembered substrate folded bent in advance at a variety of three-dimensional shapes, the three-dimensional shape can imitate various multiple
Miscellaneous object or biology etc.；The face of its three-dimensional shape is more, and the visible light on surface is near infrared from detecting device to space acquisition
Information it is more intensive abundant, be easy to implement omnibearing stereo monitoring, then tile and add the detector list in substrate surface
Element array makes it change between different shape automatically by changing environmental condition (such as: light, heat), subsequent to pass through
Lead will be reserved in the access of the interconnection conducting wire on the outside of detector unit array rear end driving and reading circuit, and combine imaging system
System, control system investment actual use, the intelligent visible light of sequencing deformation workable for being formed near infrared detector.
It can pretend the control that deformable intelligent visible light near infrared detector is not limited only to human factor to deformation,
Also automatic with the variation of environment including its own deformation occurs, the characteristic of the intelligence and low-power consumption of having withdrawn deposit of the invention,
Environment-adapting ability with super strength.The ethylene and vinyl acetate co-polymer not only has shape memory characteristic, Er Qie
There is the intelligent characteristic transparent to opaque reversible transition under condition of different temperatures.This material is paid the utmost attention in the disclosure
A kind of material, not only increase the concealment of visible light near infrared detector, also improve sensitive detection parts environment adapt to
Ability and service life.
The three-dimensional shape can imitate object or biology of various complexity etc.；The face of its three-dimensional shape is more, table
The visible light in face is more intensive abundant to information of the near infrared from detecting device to space acquisition, is easy to implement omnibearing stereo monitoring.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that in attached drawing or saying
In bright book text, the implementation for not being painted or describing is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it.
According to above description, those skilled in the art should can pretend deformable intelligent visible light to close red to the disclosure
External detector has clear understanding.
In conclusion present disclose provides one kind can pretend deformable intelligent visible light near infrared detector and its system
The detection to two kinds of wave bands of visible light and near-infrared may be implemented in Preparation Method, the detector, can not pass through Mechanical course, and
Guarantee to realize intelligent deformation under the premise of image quality, the high performance such as precision and to the comprehensive real time monitoring of environment have relatively strong
Concealment；Easy to operate on preparation section, the three-dimensional shape of detector can be arbitrarily devised, has and surpasses to complex environment
Strong adaptability is expected to make detector to realize miniaturization, portability, low-power consumption, stealthyization, and provides for infrared imaging system higher
Image quality and more design freedoms.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Those skilled in the art will understand that can be carried out adaptively to the module in the equipment in embodiment
Change and they are arranged in one or more devices different from this embodiment.It can be the module or list in embodiment
Member or component are combined into a module or unit or component, and furthermore they can be divided into multiple submodule or subelement or
Sub-component.Other than such feature and/or at least some of process or unit exclude each other, it can use any
Combination is to all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so disclosed
All process or units of what method or apparatus are combined.Unless expressly stated otherwise, this specification is (including adjoint power
Benefit require, abstract and attached drawing) disclosed in each feature can carry out generation with an alternative feature that provides the same, equivalent, or similar purpose
It replaces.Also, in the unit claims listing several devices, several in these devices can be by same hard
Part item embodies.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. one kind can pretend deformable intelligent visible light near infrared detector, comprising:
Polymeric substrates (10), shape-memory polymer is made；
Detector unit array is formed by array arrangement by multiple detector cells (20), is set to the polymeric substrates
(10) on；And
Graphene interconnecting electrode (30), graphene interconnection conducting wire is made, for connecting the detection in the detector unit array
Device unit (20).
2. according to claim 1 pretend deformable intelligent visible light near infrared detector, the shape memory
Polymer includes: polymethyl methacrylate or ethylene and vinyl acetate co-polymer.
3. according to claim 1 pretend deformable intelligent visible light near infrared detector, the detector list
Detector cells (20) in element array are mesa, are prepared by epitaxial wafer, and detector cells (20) include upper and lower table top
And mesa surfaces are respectively arranged with upper and lower electrode.
4. according to claim 3 pretend deformable intelligent visible light near infrared detector, wherein the extension
The structure of piece includes: from top to bottom
P contact layer and cap layers (1), it includes: InP, InGaAsP or InGaAs that material, which is made,；
Light absorbing layer (2), it includes: InGaAs that material, which is made,；
N contact layer (3), it includes: n-type doping InP, InGaAsP or InGaAs that material, which is made,；
Sacrificial layer (4), it includes: InGaAs or InGaAsP that material, which is made,；And
Substrate (5), it includes: InP that material, which is made,.
5. according to claim 3 pretend deformable intelligent visible light near infrared detector, the detector
The upper and lower electrode of unit (20) includes: the single-layer electrodes of Au, Ti, Pt, Pd, Cr, Zn or AuGeNi alloy or answering for their combinations
Close layer electrode.
6. according to claim 1 pretend deformable intelligent visible light near infrared detector, the graphene is mutual
The shape for joining the graphene interconnection conducting wire of electrode (30) includes: waveform line, S-shaped line, point shape or self similarity figure.
7. according to claim 1 pretend deformable intelligent visible light near infrared detector, the graphene is mutual
The graphene interconnection conducting wire for joining electrode (30) is single layer, and horizontal, vertical both direction cabling realizes the letter of each detector cells (20)
Number output.
8. a kind of preparation method, it is used to prepare that claim 1 to 7 is described in any item to pretend deformable intelligent visible light extremely
Near infrared detector, the preparation method include:
Step A: epitaxial wafer is grown, being added between epitaxial wafer substrate (5) and N contact layer (3) in growth has with N contact layer (3)
The sacrificial layer (4) of high corrosion selection ratio；
Step B: preparing mesa detector cells (20) with the epitaxial wafer that step A is grown, and makes it be in along horizontal, longitudinal direction
Two-dimensional array arrangement；
Step C: the detector surface spin coating flexible polymer material prepared by step B, and in the detector cells (20)
Between be arranged metal interconnection conducting wire；
Step D: detector surface graphene spin coating after the completion of step C is simultaneously graphical, is formed between detector cells
Graphene interconnects conducting wire, and graphene interconnecting electrode (30) are made；
Step E: the uncured flexible polymer material of detector surface spin coating after the completion of step D；
Step F: the three-dimensional shape of the polymeric substrates (10) of pre- memory detector；And
Step G: the detector of the complete flexible polymer material of step E spin coating is sticked in into the detector that step F completes to remember in advance
Polymeric substrates (10) on, complete that the preparation of deformable intelligent visible light near infrared detector can be pretended.
9. the preparation method according to claim 8 for pretending deformable intelligent visible light near infrared detector, step
The upper table surface of the detector cells (20) is etched into the upper surface of N contact layer (3), following table etches into sacrificial layer in rapid B
(4) lower surface.
10. the preparation method according to claim 9 for pretending deformable intelligent visible light near infrared detector, step
The flexible polymer material of institute's spin coating includes: polyimides, dimethyl silicone polymer or biodegradable plastic in rapid C and step E.
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Cited By (1)
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|---|---|---|---|---|
| CN114711728A (en) * | 2022-06-10 | 2022-07-08 | 天津大学 | Flexible near-infrared imaging device with variable monitoring area and depth and preparation method thereof |
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