CN109522598A - A method of solar cell piece local I V performance is calculated based on electroluminescent - Google Patents

A method of solar cell piece local I V performance is calculated based on electroluminescent Download PDF

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Publication number
CN109522598A
CN109522598A CN201811199879.1A CN201811199879A CN109522598A CN 109522598 A CN109522598 A CN 109522598A CN 201811199879 A CN201811199879 A CN 201811199879A CN 109522598 A CN109522598 A CN 109522598A
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cell piece
local
solar cell
electroluminescent
crystalline silicon
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CN201811199879.1A
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潘武淳
王磊
张深
李铭章
崔世博
张臻
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Changzhou Campus of Hohai University
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Changzhou Campus of Hohai University
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design

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  • Computer Hardware Design (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of methods for calculating solar cell piece local I V performance based on electroluminescent, by applying two groups of different applying bias on standard crystal silicon solar cell piece battery, obtain corresponding electroluminescent image, then calibration factor is calculated, local photogenerated current, local series and parallel resistance and local ideal factor obtain cell piece local I V curve finally according to single diode equivalent circuit model.The present invention obtains local I V curve by the five Local Property parameters that can quickly calculate cell piece using electroluminescent test method, can to cell piece it is harmless in the case where, it can judge the ability that cell piece generates photo-generated carrier, judge cell piece local I V performance, improves the reliability of battery.

Description

A method of solar cell piece local I V performance is calculated based on electroluminescent
Technical field
The present invention relates to a kind of methods for calculating solar cell piece local I V performance based on electroluminescent, belong to photovoltaic module Performance evaluation technical field.
Background technique
Solar energy power generating is a kind of effective means for the energy and environment for solving the problems, such as to get worse at present, and description is too The equation of positive electricity pond current-voltage characteristic be one it is complicated surmount Non-linear function equation, can not each parameter of direct solution, more Add the size for being unable to get local unit for electrical property parameters, since Local Property parameter includes series resistance, photogenerated current etc. all to electricity The efficiency in pond has great influence, so uniform with it by size distribution of the analysis and research local parameter on cell piece Property, more accurately judge that the efficiency of cell piece and quality have certain necessity from part to whole.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies of existing technologies, provide a kind of based on electroluminescent calculating The method of solar cell piece local I V performance, realization is quickly calculated using electroluminescent test method and simulation obtains crystalline silicon too Positive electricity pond local I V curve, can it is qualitative and quantitatively improve parameter calculate and analysis efficiency, reduce corresponding cost.
In order to solve the above technical problems, the present invention, which provides one kind, calculates solar cell piece local I V performance based on electroluminescent Method, comprising the following steps:
1) a piece of standard crystal silicon solar cell piece is selected；
2) start portable EL tester, a voltage U is applied to selected crystalline silicon solar cell piecel, it is somebody's turn to do The electroluminescent image of crystalline silicon solar cell piece；Part of the crystalline silicon solar cell piece under the applied voltage is calculated Electroluminescent intensity IEL(l)i, i is location index；
3) second voltage U is applied to selected crystalline silicon solar cell pieceh, obtain the crystalline silicon solar cell piece Local electroluminescent intensity I of the crystalline silicon solar cell piece under the applied voltage is calculated in electroluminescent imageEL(h)i, I is location index；
4) the local ideal factor n of crystalline silicon solar cell piece is calculatedi；
5) the local alignment coefficient C of crystalline silicon solar cell piece is calculatedi；
6) the dark saturation current of part series connection of crystalline silicon solar cell piece is calculated；
7) the local series resistance and local parallel resistance of crystalline silicon solar cell piece are calculated；
8) the local photogenerated current of crystalline silicon solar cell piece is calculated；
9) the local I V performance of crystalline silicon solar cell piece is calculated.
In aforementioned step 2), UlTake 0-UmppBetween, UmppFor maximum power point voltage.
In aforementioned step 3), UhTake Ul-UocBetween, UocFor open-circuit voltage.
In aforementioned step 2) and step 3), the calculation of local electroluminescent intensity are as follows: by electroluminescent image into Row greyscale transformation, take pixel at i gray value be position i electroluminescent intensity.
Local ideal factor calculates as follows in aforementioned step 4):
Wherein, niFor the ideal factor of position i, q is charge coefficient, and K is Boltzmann constant, and T is crystalline silicon sun electricity Pond piece temperature.
In aforementioned step 5), calibration factor calculates as follows:
There are following relationships with electroluminescent intensity for the open-circuit voltage of solar cell piece:
IEL(l)i=Ci exp(qUl/niKT)
Wherein, CiFor the calibration factor of position i.
In aforementioned step 6), the part dark saturation current of series connection calculates as follows:
Ioi=f/Ci
Wherein, IoiFor the dark saturation current of series connection of position i, Rs,gFor crystalline silicon solar cell piece series resistance, N is position Total points, UtFor thermal voltage, UiFor built-in voltage.
In aforementioned step 7), local series resistance and local parallel resistance calculating are as follows:
Wherein, RsiFor the series resistance of position i, Rsh,iFor the parallel resistance of position i,
Ii=Ioi exp(Uiq/KT)。
In aforementioned step 8), local photoproduction galvanometer is calculated as follows:
Wherein, IphiIndicate the photogenerated current of position i, I0For dark saturation current.
In aforementioned step 9), local I V performance calculates as follows:
Wherein, IiIndicate the electric current of position i.
The invention has the benefit that
(1) five Local Properties of the invention by can quickly calculate cell piece using electroluminescent test method Parameter obtains local I V curve, can to cell piece it is harmless in the case where, can judge cell piece generate photoproduction current-carrying The ability of son, judges cell piece local I V performance, improves the reliability of battery.
(2) present invention can be qualitative and quantitatively improves the efficiency that parameter is calculated and analyzed, and reduces corresponding cost.
Detailed description of the invention
Fig. 1 is of the invention based on EL image analysis solar cell piece local I V performance flow chart.
Specific embodiment
Present invention will be further described below with reference to the accompanying drawings and specific embodiments.Following embodiment is only used for more clear Illustrate to Chu technical solution of the present invention, and not intended to limit the protection scope of the present invention.
The method that solar cell piece local I V performance is calculated based on electroluminescent of the invention, as shown in Figure 1, specific steps It is as follows:
1) a piece of standard crystal silicon solar cell piece is selected.
2) start portable EL tester, a lower voltage U is applied to selected crystalline silicon solar cell piecel, obtain To the electroluminescent image of the standard crystal silicon solar cell piece, voltage UlSize generally takes 0-UmppBetween voltage, it is calculated Local electroluminescent intensity I under the standard crystal silicon solar cell piece applied voltageEL(l)i, i is location index.IEL(l)i's Calculation method is that electroluminescent image is carried out greyscale transformation, takes the electroluminescent that the gray value of pixel at i is position i strong Degree.UmppFor maximum power point voltage.
3) second voltage U is applied to selected crystalline silicon solar cell pieceh, UhSize is Ul-UocBetween voltage, obtain To the electroluminescent image of the standard crystal silicon solar cell piece, the crystalline silicon solar cell piece is calculated in the applied voltage Under local electroluminescent intensity IEL(h)i, i is location index.IEL(h)iCalculation method be, by electroluminescent image carry out ash Degree transformation takes the electroluminescent intensity that the gray value of pixel at i is position i.
4) the local ideal factor of solar cell piece is calculated, the relationship between electroluminescent intensity and built-in voltage is such as public Formula (1),
IELi=Ci exp(qUi/niKT) (1)
By the relationship of electroluminescent intensity and bias under two groups of biass of comparison, following formula (2) are obtained:
Wherein, niFor the ideal factor of position i, CiFor the calibration factor of position i, UiIt is i.e. interior for cell piece diode partial pressure Voltage is set, q is charge coefficient, and numerical value is 1.6 × 10-19C, K are Boltzmann constant, and numerical value is 1.38 × 10-23J/K, T are too Positive cell piece temperature；
The local ideal factor of the standard crystal silicon solar cell piece is finally calculated:
5) calibration factor C is calculatedi, under lower applying bias, the partial pressure effect of series resistance can be ignored, therefore Apply UlIn the case where, solar cell piece built-in voltage UiAs applied voltage is Ul, then formula (1) converts are as follows:
IEL(l)i=Ci exp(qUl/niKT) (4)
The calibration factor C of out position i can be calculated according to formula (4)i。
6) the dark saturation current of part series connection for calculating crystalline silicon solar cell piece, can be obtained office according to formula (5), (6) The dark saturation current of portion's series connection:
Ioi=f/Ci (5)
Wherein, IoiFor the dark saturation current of series connection of position i, Rs,gFor crystalline silicon solar cell piece series resistance size, value It provides series impedance in cell piece parameter by producer to determine, N is that position is always counted, UtFor thermal voltage, numerical value is equal to
7) the local series and parallel resistance for calculating crystalline silicon solar cell piece, according to being obtained at different location under higher biased Electroluminescent intensity and calibration factor Ci, formula (1) is changed and calculates built-in voltage UiThat is formula (7), further according to electric current With the relationship of voltage, current type (8) are calculated, the local series and parallel resistance of solar cell piece is finally calculated:
Ii=Ioi exp(Uiq/KT) (8)
Wherein, RsiFor the series resistance of position i, Rsh,iFor the parallel resistance of position i.
8) the local photogenerated current of solar cell piece, open-circuit voltage U are calculatedocWith photogenerated current IphThere are shown in formula (11) Relationship,
Wherein, I0For dark saturation current, n is ideal factor.
According to document Solar Energy Materials&Solar Cells 155 (2016) 38-42, open-circuit voltage Uoc There are the relationships of formula (12) between electroluminescent intensity:
IELi=Ci exp(qUoc/niKT) (12)
In higher applying bias UhUnder, by the U in formula (12)oc, replaced with formula (11), by transformation calculations, obtained The photogenerated current size of position i, as shown in formula (13):
Wherein, IphiIndicate the photogenerated current of position i.
9) simulation calculates the local I V curve of solar cell piece, the local parameter size obtained according to above-mentioned steps, comprising: Local series resistance Rsi, local parallel resistance Rsh,i, local photogenerated current Iphi, local ideal factor ni, according to single diode etc. Circuit model is imitated, cell piece local I V curve can be obtained using data processing software:
Wherein, IiIndicate the electric current of position i.
In the present invention, the local electroluminescent intensity obtained for applying different biass, location index i is in solar cell piece In position it is identical.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations Also it should be regarded as protection scope of the present invention.

Claims (10)

1. a kind of method for calculating solar cell piece local I V performance based on electroluminescent, which comprises the following steps:
1) a piece of standard crystal silicon solar cell piece is selected；
2) start portable EL tester, a voltage U is applied to selected crystalline silicon solar cell piecel, obtain the crystalline silicon The electroluminescent image of solar cell piece；The electroluminescent hair in part of the crystalline silicon solar cell piece under the applied voltage is calculated Luminous intensity IEL(l)i, i is location index；
3) second voltage U is applied to selected crystalline silicon solar cell pieceh, obtain the electroluminescent of the crystalline silicon solar cell piece Local electroluminescent intensity I of the crystalline silicon solar cell piece under the applied voltage is calculated in luminescent imageEL(h)i, i is Location index；
4) the local ideal factor n of crystalline silicon solar cell piece is calculatedi；
5) the local alignment coefficient C of crystalline silicon solar cell piece is calculatedi；
6) the dark saturation current of part series connection of crystalline silicon solar cell piece is calculated；
7) the local series resistance and local parallel resistance of crystalline silicon solar cell piece are calculated；
8) the local photogenerated current of crystalline silicon solar cell piece is calculated；
9) the local I V performance of crystalline silicon solar cell piece is calculated.
2. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 1, special Sign is, in the step 2), UlTake 0-UmppBetween, UmppFor maximum power point voltage.
3. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 1, special Sign is, in the step 3), UhTake Ul-UocBetween, UocFor open-circuit voltage.
4. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 1, special Sign is, in the step 2) and step 3), the calculation of local electroluminescent intensity are as follows: electroluminescent image is subjected to ash Degree transformation, take pixel at i gray value be position i electroluminescent intensity.
5. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 1, special Sign is that local ideal factor calculates as follows in the step 4):
Wherein, niFor the ideal factor of position i, q is charge coefficient, and K is Boltzmann constant, and T is crystalline silicon solar cell piece temperature Degree.
6. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 5, special Sign is, in the step 5), calibration factor calculates as follows:
There are following relationships with electroluminescent intensity for the open-circuit voltage of solar cell piece:
IEL(l)i=Ciexp(qUl/niKT)
Wherein, CiFor the calibration factor of position i.
7. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 6, special Sign is, in the step 6), the part dark saturation current of series connection calculates as follows:
Ioi=f/Ci
Wherein, IoiFor the dark saturation current of series connection of position i, Rs,gFor crystalline silicon solar cell piece series resistance, N is the total point in position Number, UtFor thermal voltage, UiFor built-in voltage.
8. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 7, special Sign is, in the step 7), local series resistance and local parallel resistance calculating are as follows:
Wherein, RsiFor the series resistance of position i, Rsh,iFor the parallel resistance of position i,
Ii=Ioiexp(Uiq/KT)。
9. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 8, special Sign is, in the step 8), local photoproduction galvanometer is calculated as follows:
Wherein, IphiIndicate the photogenerated current of position i, I0For dark saturation current.
10. a kind of method for calculating solar cell piece local I V performance based on electroluminescent according to claim 9, special Sign is, in the step 9), local I V performance calculates as follows:
Wherein, IiIndicate the electric current of position i.
CN201811199879.1A 2018-10-16 2018-10-16 A method of solar cell piece local I V performance is calculated based on electroluminescent Withdrawn CN109522598A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112285519A (en) * 2020-10-26 2021-01-29 中国科学院上海微***与信息技术研究所 Method for measuring series resistance and ideal factor in diode gating array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112285519A (en) * 2020-10-26 2021-01-29 中国科学院上海微***与信息技术研究所 Method for measuring series resistance and ideal factor in diode gating array

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Application publication date: 20190326