CN109514744A - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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CN109514744A
CN109514744A CN201811066921.2A CN201811066921A CN109514744A CN 109514744 A CN109514744 A CN 109514744A CN 201811066921 A CN201811066921 A CN 201811066921A CN 109514744 A CN109514744 A CN 109514744A
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铃木克彦
伴祐人
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Disco Corp
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Abstract

提供晶片的加工方法。该晶片是在正面上由交叉形成的多条分割预定线划分的芯片区域内分别形成有器件的器件晶片，其正面被密封材料密封，该方法具有如下工序：对准工序，通过可见光拍摄构件透过密封材料对器件晶片的正面侧进行拍摄而检测对准标记并据此检测应进行激光加工的分割预定线；改质层形成工序，将对于器件晶片和密封材料具有透过性的波长的激光束的聚光点定位在器件晶片或密封材料的内部并沿着分割预定线照射而形成改质层；和分割工序，对器件晶片和密封材料赋予外力而以改质层为分割起点将该晶片分割成正面被密封材料密封的各个器件芯片，一边通过倾斜光构件对可见光拍摄构件所拍摄的区域斜着照射光，一边实施对准工序。

Description

晶片的加工方法
技术领域
本发明涉及WL-CSP晶片的加工方法。
背景技术
WL-CSP(Wafer-level Chip Size Package：晶圆级芯片尺寸封装)晶片是指在晶片的状态下形成重布线层或电极(金属柱)之后对正面侧进行树脂密封并利用切削刀具等分割成各封装的技术，对晶片进行单片化而得的封装的大小是半导体器件芯片的大小，因此从小型化和轻量化的观点出发也被广泛采用。
在WL-CSP晶片的制造工艺中，在形成有多个器件的器件晶片的器件面侧形成重布线层，接着隔着重布线层形成与器件中的电极连接的金属柱，之后利用树脂将金属柱和器件密封。
接着，在对密封材料进行薄化并且使金属柱在密封材料正面露出之后，在金属柱的端面形成被称为电极凸块的外部端子。之后，利用切削装置等对WL-CSP晶片进行切削而分割成各个CSP。
为了保护半导体器件免受冲击或湿气等，利用密封材料进行密封是很重要的。通常，作为密封材料，使用向环氧树脂中混入了由SiC构成的填料而得的密封材料，从而使密封材料的热膨胀率接近半导体器件芯片的热膨胀率，防止了因热膨胀率之差而产生的加热时的封装破损。
通常使用切削装置将WL-CSP晶片分割成各个CSP。在该情况下，由于WL-CSP晶片的被用于检测分割预定线的器件被树脂覆盖，所以无法从正面侧检测器件的目标图案。
为此，将形成在WL-CSP晶片的树脂上的电极凸块作为目标来推断分割预定线，或者在树脂的上表面上印刷对准用的目标等而进行分割预定线与切削刀具的对准。
然而，由于电极凸块或印刷在树脂上的目标不像器件那样高精度地形成，所以作为对准用的目标，存在精度较低的问题。因此，在根据电极凸块或印刷的目标来推断分割预定线的情况下，有可能与分割预定线偏离地对器件部分进行切削。
因此，例如在日本特开2013-74021号公报中，提出了以在晶片外周露出的器件晶片的图案为基准来进行对准的方法。
专利文献1：日本特开2013-074021号公报
专利文献2：日本特开2016-015438号公报
然而，在晶片的外周通常器件精度较差，当以在晶片的外周露出的图案为基准实施对准时，有可能在与分割预定线分开的位置对晶片进行分割，而且因晶片的不同还存在器件晶片的图案未在外周露出的情况。
发明内容
本发明是鉴于这样的点而完成的，其目的在于，提供能够透过包覆于晶片正面的包含炭黑的密封材料来实施对准工序的晶片的加工方法。
根据本发明，提供晶片的加工方法，该晶片是在正面上由交叉形成的多条分割预定线划分的芯片区域内分别形成有器件的器件晶片，该器件晶片的正面被密封材料密封，在该密封材料的该芯片区域内分别形成有多个凸块，其特征在于，该晶片的加工方法具有如下的工序：对准工序，从该晶片的正面侧通过可见光拍摄构件透过该密封材料对该器件晶片的正面侧进行拍摄而检测对准标记，根据该对准标记来检测应进行激光加工的该分割预定线；改质层形成工序，在实施了该对准工序之后，将对于该器件晶片和该密封材料具有透过性的波长的激光束的聚光点定位在该器件晶片或该密封材料的内部，从该晶片的正面侧沿着该分割预定线照射激光束，在该器件晶片和该密封材料的内部形成改质层；以及分割工序，在实施了该改质层形成工序之后，对该器件晶片和该密封材料赋予外力而以该改质层为分割起点将该晶片分割成正面被该密封材料密封的各个器件芯片，一边通过倾斜光构件对该可见光拍摄构件所拍摄的区域斜着照射光，一边实施该对准工序。
根据本发明的晶片的加工方法，一边利用倾斜光构件斜着照射光，一边通过可见光拍摄构件透过密封材料来检测形成于器件晶片的对准标记，能够根据对准标记来实施对准，因此能够简单地实施对准工序，无需如以往那样将晶片的正面的外周部分的密封材料去除。
因此，将对于器件晶片和密封材料具有透过性的波长的激光束的聚光点定位在器件晶片或密封材料的内部而从晶片的正面侧照射激光束，在器件晶片和密封材料的内部形成改质层，能够以该改质层为分割起点将晶片分割成正面被密封材料密封的各个器件芯片。
附图说明
图1的(A)是WL-CSP晶片的分解立体图，图1的(B)是WL-CSP晶片的立体图。
图2是WL-CSP晶片的放大剖视图。
图3是示出将WL-CSP晶片粘贴在外周部安装于环状框架的划片带上的情形的立体图。
图4是示出对准工序的剖视图。
图5的(A)是示出改质层形成工序的剖视图，图5的(B)是将聚光点定位在器件晶片的内部的状态的WL-CSP晶片的局部放大剖视图，图5(C)是将聚光点定位在密封材料的内部的状态的WL-CSP晶片的局部放大剖视图。
图6是分割装置的立体图。
图7的(A)和(B)是示出分割工序的剖视图。
图8是实施了分割工序之后的WL-CSP晶片的局部放大剖视图。
标号说明
11：器件晶片；13：分割预定线；15：器件；16：激光头(聚光器)；21：金属柱；23：密封材料；25：凸块；26：可见光拍摄构件(可见光拍摄单元)；27：WL-CSP晶片；28：倾斜光构件；29、29a、29b：改质层；31：器件芯片；50：分割装置。
具体实施方式
以下，参照附图对本发明的实施方式进行详细说明。参照图1的(A)，示出了WL-CSP晶片27的分解立体图。图1的(B)是WL-CSP晶片27的立体图。
如图1的(A)所示，在器件晶片11的正面11a上，在由形成为格子状的多条分割预定线(间隔道)13划分出的各区域内形成有LSI等器件15。
预先对器件晶片(以下，有时简称为晶片)11的背面11b进行磨削而薄化至规定的厚度(100μm～200μm左右)，然后，如图2所示，在形成了与器件15中的电极17电连接的多个金属柱21之后，利用密封材料23以埋设金属柱21的方式将晶片11的正面11a侧密封。
作为密封材料23，其组成按质量％包含环氧树脂或环氧树脂+酚醛树脂10.3％、二氧化硅填料8.53％、炭黑0.1～0.2％、其他成分4.2～4.3％。作为其他成分，例如，包含金属氢氧化物、三氧化锑、二氧化硅等。
当利用这种组成的密封材料23来包覆晶片11的正面11a从而将晶片11的正面11a密封时，密封材料23因密封材料23中所包含的极少量的炭黑而呈黑色，因此通常很难透过密封材料23看到晶片11的正面11a。
这里，向密封材料23中混入炭黑主要是为了防止器件15的静电破坏，目前在市场上还没有销售不含炭黑的密封材料。
作为其他实施方式，也可以在对器件晶片11的正面11a上形成了重布线层之后，在重布线层上形成与器件15中的电极17电连接的金属柱21。
接着，使用具有由单晶金刚石构成的刀具切削工具的平面切削装置(surfaceplane：平整机)或被称为砂轮机的磨削装置对密封材料23进行薄化。在对密封材料23进行了薄化之后，例如通过等离子蚀刻使金属柱21的端面露出。
接着，使用公知的方法在露出的金属柱21的端面上形成锡铅合金等的金属凸块25，从而完成WL-CSP晶片27。在本实施方式的WL-CSP晶片27中，密封材料23的厚度为100μm左右。
当利用激光加工装置对WL-CSP晶片27进行加工时，如图3所示，优选将WL-CSP晶片27粘贴在外周部被粘贴于环状框架F的作为粘合带的划片带T上。由此，WL-CSP晶片27成为借助划片带T被环状框架F支承的状态。
不过，当利用激光加工装置对WL-CSP晶片27进行加工时，也可以采用不使用环状框架F而在WL-CSP晶片27的背面上粘贴粘合带的方式。
在本发明的晶片的加工方法中，首先，实施如下的对准工序：从WL-CSP晶片27的正面侧通过可见光拍摄构件以透过密封材料23的方式对器件晶片11的正面11a进行拍摄，检测形成于器件晶片11的正面的至少两个目标图案等对准标记，根据这些对准标记来检测应进行激光加工的分割预定线13。
参照图4对该对准工序进行详细说明。在实施对准工序之前，将晶片11的背面11b侧粘贴在外周部安装于环状框架F的划片带T上。
在对准工序中，如图4所示，隔着划片带T利用激光加工装置的卡盘工作台10对WL-CSP晶片27进行吸引保持，使将器件晶片11的正面11a密封的密封材料23向上方露出。然后，利用夹具12对环状框架F进行夹持而固定。
在对准工序中，利用可见光拍摄单元26的CCD等拍摄元件对WL-CSP晶片27的正面进行拍摄。然而，在密封材料23中包含二氧化硅填料、炭黑等成分，而且在密封材料23的正面上存在凹凸，因此即使通过可见光拍摄单元26的垂直照射而透过密封材料23对器件晶片11的正面11a进行拍摄，拍摄图像也会变得模糊，很难检测出目标图案等对准标记。
因此，在本实施方式的对准工序中，除了可见光拍摄单元26的垂直照射之外，还从倾斜光构件28向拍摄区域斜着照射光，从而缓解拍摄图像的模糊，能够检测出对准标记。
从倾斜光构件28照射的光优选是白色光，相对于WL-CSP晶片27的正面的入射角优选30°～60°的范围内。优选可见光拍摄单元26具有能够对曝光时间等进行调整的曝光器件(exposure)。
接着，使卡盘工作台10进行θ旋转以便使连接这些对准标记而得的直线与加工进给方向平行，然后使图5的(A)所示的卡盘工作台10按照对准标记与分割预定线13的中心之间的距离在与加工进给方向X1垂直的方向上移动，从而检测出应进行激光加工的分割预定线13。
在实施了对准工序之后，实施改质层形成工序，如图5的(A)所示，激光加工装置的激光头(聚光器)16从WL-CSP晶片27的正面侧沿着分割预定线13将对于器件晶片11和密封材料23具有透过性的波长(例如1064nm)的激光束LB的聚光点定位在器件晶片11的内部或密封材料23的内部，然后对卡盘工作台10在箭头X1方向或箭头X2方向上进行加工进给，从而在器件晶片的内部和密封材料23的内部形成改质层29(29a、29b)。
在改质层形成工序中，首先，如图5的(B)所示，将激光束LB的聚光点定位在器件晶片11的内部而在箭头X1方向上对卡盘工作台10进行加工进给，从而在器件晶片11的内部形成聚光点29a。
接着，如图5的(C)所示，将激光束LB的聚光点定位在密封材料23的内部而在箭头X2方向上对卡盘工作台10进行加工进给，从而在密封材料23的内部形成改质层29b。
当沿着在第1方向上延伸的分割预定线13在往路和返路上依次实施了该改质层形成工序之后，使卡盘工作台10旋转90°，沿着在与第1方向垂直的第2方向上延伸的分割预定线13在往路和返路上依次实施该改质层形成工序。
在实施了改质层形成工序之后，实施分割工序，使用图6所示的分割装置50对WL-CSP晶片27赋予外力，将WL-CSP晶片27分割成各个器件芯片31。
图7所示的分割装置50具有：框架保持构件52，其对环状框架F进行保持；以及带扩展构件54，其对划片带T进行扩展，该划片带T安装于环状框架F，该环状框架F保持在框架保持构件52上。
框架保持构件52由环状的框架保持部件56和配设在框架保持部件56的外周的作为固定构件的多个夹具58构成。框架保持部件56的上表面形成载置环状框架F的载置面56a，在该载置面56a上载置环状框架F。
然后，载置在载置面56a上的环状框架F被夹具58固定在框架保持构件56上。这样构成的框架保持构件52被带扩展构件54支承为能够在上下方向上移动。
带扩展构件54具有配设在环状的框架保持部件56的内侧的扩展鼓60。扩展鼓60的上端被盖62封闭。该扩展鼓60具有比环状框架F的内径小且比WL-CSP晶片27的外径大的内径，其中，该WL-CSP晶片27粘贴于划片带T，该划片带T安装于环状框架F。
扩展鼓60在其下端具有形成为一体的支承凸缘64。带扩展构件54还具有驱动构件66，该驱动构件66使环状的框架保持部件56在上下方向上移动。该驱动构件66由配设在支承凸缘64上的多个气缸68构成，其活塞杆70与框架保持部件56的下表面连结。
由多个气缸68构成的驱动构件66使环状的框架保持部件56在基准位置与扩展位置之间沿上下方向移动，其中，该基准位置是环状的框架保持部件56的载置面56a与作为扩展鼓60的上端的盖62的正面为大致相同高度的位置，该扩展位置是比扩展鼓60的上端靠下方的规定的量的位置。
参照图7对使用以上方式构成的分割装置50来实施的WL-CSP晶片27的分割工序进行说明。如图7的(A)所示，将借助划片带T支承着WL-CSP晶片27的环状框架F载置在框架保持部件56的载置面56a上，并通过夹具58固定在框架保持部件56上。此时，框架保持部件56被定位在其载置面56a与扩展鼓60的上端为大致相同高度的基准位置。
接着，对气缸68进行驱动而使框架保持部件56下降到图7的(B)所示的扩展位置。由此，使固定在框架保持部件56的载置面56a上的环状框架F下降，因此安装于环状框架F的划片带T与扩展鼓60的上端缘抵接而主要在半径方向上扩展。
其结果是，对粘贴于划片带T的WL-CSP晶片27呈放射状作用拉伸力。当以这种方式对WL-CSP晶片27呈放射状作用拉伸力时，WL-CSP晶片27沿着分割预定线13以形成在器件晶片11中的改质层29a和形成在密封材料23中的改质层29b为分割起点而沿着分割预定线13如图8的放大剖视图所示的那样被割断，被分割成正面被密封材料23密封的各个器件芯片31。

Claims (1)

1.一种晶片的加工方法，该晶片是在正面上由交叉形成的多条分割预定线划分的芯片区域内分别形成有器件的器件晶片，该器件晶片的正面被密封材料密封，在该密封材料的该芯片区域内分别形成有多个凸块，其特征在于，
该晶片的加工方法具有如下的工序：
对准工序，从该晶片的正面侧通过可见光拍摄构件透过该密封材料对该器件晶片的正面侧进行拍摄而检测对准标记，根据该对准标记来检测应进行激光加工的该分割预定线；
改质层形成工序，在实施了该对准工序之后，将对于该器件晶片和该密封材料具有透过性的波长的激光束的聚光点定位在该器件晶片或该密封材料的内部，从该晶片的正面侧沿着该分割预定线照射激光束，在该器件晶片和该密封材料的内部形成改质层；以及
分割工序，在实施了该改质层形成工序之后，对该器件晶片和该密封材料赋予外力而以该改质层为分割起点将该晶片分割成正面被该密封材料密封的各个器件芯片，
一边通过倾斜光构件对该可见光拍摄构件所拍摄的区域斜着照射光，一边实施该对准工序。
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