CN109506140A - A kind of ultra-high brightness LED bulb lamp - Google Patents

A kind of ultra-high brightness LED bulb lamp Download PDF

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Publication number
CN109506140A
CN109506140A CN201811419363.3A CN201811419363A CN109506140A CN 109506140 A CN109506140 A CN 109506140A CN 201811419363 A CN201811419363 A CN 201811419363A CN 109506140 A CN109506140 A CN 109506140A
Authority
CN
China
Prior art keywords
lamp
resistor
ultra
lamp housing
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811419363.3A
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Chinese (zh)
Inventor
年靠江
吴大健
吴疆
彭友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anhui Polytron Technologies Inc
Original Assignee
Anhui Polytron Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anhui Polytron Technologies Inc filed Critical Anhui Polytron Technologies Inc
Priority to CN201811419363.3A priority Critical patent/CN109506140A/en
Publication of CN109506140A publication Critical patent/CN109506140A/en
Pending legal-status Critical Current

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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/238Arrangement or mounting of circuit elements integrated in the light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00Globes; Bowls; Cover glasses
    • F21V3/04Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F21V3/06Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
    • F21V3/062Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material being plastics
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)

Abstract

The present invention discloses a kind of ultra-high brightness LED bulb lamp, including lamp housing, the outer surface of the lamp housing is provided with several groups cooling fin, and the downside surface of lamp housing is equipped with screw mount, insertion is equipped with lampshade on the inside of the upper end of the lamp housing, the inner bottom of the lamp housing is provided with non-isolated circuit board, and the inner upper end of lamp housing is provided with aluminum substrate, the uper side surface of the aluminum substrate is equipped with several groups lamp bead, silica gel slot is offered on the inside of the upper end of the lamp bead, and the inner bottom of silica gel slot is provided with array chip;A kind of ultra-high brightness LED bulb lamp of the present invention is by improving non-isolated circuit, effectively reduce the internal resistance of inductance, reduce inductance calorific value, to effectively reduce the power loss of lamp bead, using the combination of PC and acrylic, the light transmittance of lampshade is greatly improved, by the way of polycrystalline chip arrays, the light-emitting area of chip can be greatly improved, so that the light efficiency of lamp bead is significantly promoted.

Description

A kind of ultra-high brightness LED bulb lamp
Technical field
The invention belongs to lighting technical fields, and in particular to arrive a kind of LEDbulb lamp, more particularly a kind of super brightness LEDbulb lamp.
Background technique
LEDbulb lamp is a kind of common illuminator, the bulb shapes that LEDbulb lamp appearance uses people to be accustomed to Or it is spherical, internal light source selection is LED chip, and relative to traditional tengsten lamp, LEDbulb lamp has energy conservation and environmental protection, uses Service life is long and the advantages that without stroboscopic, and installs convenience, and maintenance cost is low, is prevalent in each family and uses, as LED shines The high speed development of bright technology, the energy-saving effect of LEDbulb lamp have reached very high degree, but existing LEDbulb lamp There is also certain shortcomings to have much room for improvement, it is believed that can further be developed;
There are certain drawbacks in existing LEDbulb lamp, existing LEDbulb lamp is bright when in use during use To spend more general, power consumption is larger when in use for the biggish LEDbulb lamp of brightness, need to expend more electric energy, and bulb lamp Lampshade mostly uses greatly one layer of PC composition, and light transmittance is low, and tool has a certain impact in actual use, is more troublesome.
Summary of the invention
In order to overcome above-mentioned technical problem, the purpose of the present invention is to provide a kind of ultra-high brightness LED bulb lamp, this hairs The bright non-isolated circuit by non-isolated circuit board improves, and increases multiturn inductance coil, i.e., by improving inductance coil Line footpath, reduce the internal resistance of inductance, reduce inductance calorific value, to effectively reduce the power loss of lamp bead;By in lampshade Interior seamless fusion acrylic layer, had not only reached Whole PC cover hardness requirement, but also met light transmittance and reach 95% or more ultralow light loss and want It asks;By the way that array chip is arranged, array chip uses multiple semiconductor wafers, and a wafer substrates, bilateral symmetry side puts four The arrangement mode of chip, so as to expand the light-emitting area of chip, so that multiple groups chip mutually constitutes easy reflecting system, Promote the section temperature drop of lamp bead low, reach light efficiency substantial increase, methyl system organic silica gel is filled in silica gel slot, adds fluorescent powder As spread powder, while in the bottom compound reflecting paint of lamp bead, so as to play preferable diffusion and refraction effect.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of ultra-high brightness LED bulb lamp, including lamp housing, the outer surface of the lamp housing are provided with several groups cooling fin, and The downside surface of lamp housing is equipped with screw mount, and insertion is equipped with lampshade on the inside of the upper end of the lamp housing;
The inner bottom of the lamp housing is provided with non-isolated circuit board, and the inner upper end of lamp housing is provided with aluminum substrate, institute The uper side surface for stating aluminum substrate is equipped with several groups lamp bead, offers silica gel slot on the inside of the upper end of the lamp bead, and silica gel slot Inner bottom is provided with array chip, is connected with gold thread between the upside of the array chip and the inner surface of lamp bead;
The inner surface of the lampshade is provided with one layer of acrylic layer, and connector sleeve is connected on the downside of lampshade.
As a further solution of the present invention: the non-isolated circuit connecting mode of the non-isolated circuit board are as follows: described non- In isolation circuit plate, firewire L is concatenated with fuse RF1, and firewire L and zero curve N are respectively connected to the upper and lower ends mouth of electric bridge BD1, A side ports of electric bridge BD1 are grounded, and another side ports of electric bridge BD1 are parallel with resistor R7, inductance coil L1, capacitor C1 and electricity Hold C2, one end of capacitor C2 is serially connected with multiturn inductance coil L2-1, and one end of multiturn inductance coil L2-1 is serially connected with chip, chip One end be further connected with diode D1 and multiturn inductance coil L2-2, the other end of chip is serially connected with resistor R1, and chip is another One end is also parallel with capacitor C4, resistor R2 and resistor R3, and wherein capacitor C4, resistor R1 and resistor R2 connect, electricity One end of resistance device R1 is parallel with capacitor C3 and capacitor C5, and one end of capacitor C3 is parallel with resistor R5, one end string of resistor R5 Connect the positive grade of LED power, the cathode of the other end concatenation LED power of resistor R5.
As a further solution of the present invention: the cooling fin is angularly disposed in arcuation, and is provided between cooling fin recessed Type groove, the small width for descending both ends thereon of the middle part width of the cooling fin.
As a further solution of the present invention: the periphery setting hollow out with acrylic layer, and sub- gram are enclosed in the lampshade The lower edge and lampshade of power layer pass through hot-melt adhesive paste.
As a further solution of the present invention: the array chip includes multiple groups semiconductor wafer, wherein one group of chip Left and right is symmetrically arranged with four groups of chips.
As a further solution of the present invention: the lamp housing and screw mount engagement connection, and under screw mount Surface is provided with conductive contact.
As a further solution of the present invention: being provided with filler in the silica gel slot, which is that methyl system is organic Silica gel and phosphor mixture composition.
Beneficial effects of the present invention:
1, the present invention is improved by the non-isolated circuit to non-isolated circuit board, increases multiturn inductance coil, i.e., logical The line footpath for improving inductance coil is crossed, the internal resistance of inductance is reduced, inductance calorific value is reduced, to improve the efficiency of 1-2%, using feedback The mode of winding carries out the peak value control of electric current, and when LED power output variation reaches the maximum value of setting, feedback winding obtains foot Enough induced electromotive forces, to effectively reduce the power loss of lamp bead;
2, by fusion acrylic layer seamless in lampshade, by the thickness control of PC cover in 0.3mm, the thickness of acrylic layer Control, so that seamless welding thickness reaches 0.6mm, has not only reached Whole PC cover hardness requirement, but also meet light transmittance and reach in 0.3mm 95% or more ultralow light loss requirement;
3, by setting array chip, array chip uses multiple semiconductor wafers, a wafer substrates, bilateral symmetry side Put the arrangement mode of four chips, so as to expand the light-emitting area of chip so that multiple groups chip mutually constitute it is easy to be anti- System is penetrated, promotes the section temperature drop of lamp bead low, reaches light efficiency substantial increase, routinely encapsulation glue is high about for packing ratio in silica gel slot The methyl system organic silica gel of 5% light transmittance and 7% or so refractive index adds fluorescent powder as spread powder, while in lamp bead Bottom compound reflecting paint, so as to play preferable diffusion and refraction effect.
Detailed description of the invention
The present invention will be further described below with reference to the drawings.
Fig. 1 is a kind of overall structure diagram of ultra-high brightness LED bulb lamp of the present invention.
Fig. 2 is whole interior structural schematic diagram in a kind of ultra-high brightness LED bulb lamp of the present invention.
Fig. 3 is the overall structure diagram of lamp bead in a kind of ultra-high brightness LED bulb lamp of the present invention.
Fig. 4 is the sectional view of lampshade in a kind of ultra-high brightness LED bulb lamp of the present invention.
Fig. 5 is the circuit connection diagram of non-isolated circuit board in a kind of ultra-high brightness LED bulb lamp of the present invention.
1, lamp housing in figure;2, cooling fin;3, screw mount;4, lampshade;5, non-isolated circuit board;6, aluminum substrate;7, lamp Pearl;8, silica gel slot;9, array chip;10, gold thread;11, connector sleeve;12, acrylic layer.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the invention is clearly and completely described, Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention Embodiment, all other embodiment obtained by those of ordinary skill in the art without making creative efforts, all Belong to the scope of protection of the invention.
As shown in Figs. 1-5, a kind of ultra-high brightness LED bulb lamp, including lamp housing 1, the outer surface of lamp housing 1 are provided with several groups Cooling fin 2, and the downside surface of lamp housing 1 is equipped with screw mount 3, insertion is equipped with lampshade 4 on the inside of the upper end of lamp housing 1;
The inner bottom of lamp housing 1 is provided with non-isolated circuit board 5, and the inner upper end of lamp housing 1 is provided with aluminum substrate 6, aluminium The uper side surface of substrate 6 is equipped with several groups lamp bead 7, offers silica gel slot 8, and the inside of silica gel slot 8 on the inside of the upper end of lamp bead 7 Bottom end is provided with array chip 9, is connected with gold thread 10 between the upside of array chip 9 and the inner surface of lamp bead 7;
The inner surface of lampshade 4 is provided with one layer of acrylic layer 12, and the downside of lampshade 4 is connected with connector sleeve 11.
As a further solution of the present invention: the non-isolated circuit connecting mode of non-isolated circuit board 5 are as follows: non-isolated circuit In plate 5, firewire L is concatenated with fuse RF1, and firewire L and zero curve N are respectively connected to the upper and lower ends mouth of electric bridge BD1, electric bridge BD1 Side ports ground connection, another side ports of electric bridge BD1 are parallel with resistor R7, inductance coil L1, capacitor C1 and capacitor C2, electricity The one end for holding C2 is serially connected with multiturn inductance coil L2-1, and one end of multiturn inductance coil L2-1 is serially connected with chip, one end of chip It is further connected with diode D1 and multiturn inductance coil L2-2, the other end of chip is serially connected with resistor R1, and the other end of chip is also It is parallel with capacitor C4, resistor R2 and resistor R3, wherein capacitor C4, resistor R1 and resistor R2 connect, resistor R1 One end be parallel with capacitor C3 and capacitor C5, one end of capacitor C3 is parallel with resistor R5, one end concatenation LED electricity of resistor R5 The positive grade in source, the cathode of the other end concatenation LED power of resistor R5.
As a further solution of the present invention: cooling fin 2 is angularly disposed in arcuation, and is provided with concave between cooling fin 2 Slot, the small width for descending both ends thereon of the middle part width of cooling fin 2.
As a further solution of the present invention: the periphery setting hollow out with acrylic layer 12, and acrylic are enclosed in lampshade 4 The lower edge and lampshade 4 of layer 12 pass through hot-melt adhesive paste.
As a further solution of the present invention: array chip 9 includes multiple groups semiconductor wafer, wherein the left and right of one group of chip It is symmetrically arranged with four groups of chips.
As a further solution of the present invention: lamp housing 1 and the engagement connection of screw mount 3, and the following table of screw mount 3 Face is provided with conductive contact.
As a further solution of the present invention: being provided with filler in silica gel slot 8, which is methyl system organic silica gel It is formed with phosphor mixture.
A kind of ultra-high brightness LED bulb lamp, when in use, lamp housing 1, lampshade 4 and screw mount 3 form ball bubble first The main part of lamp, lampshade 4 are connected by connector sleeve 11 and lamp housing 1, and screw mount 3 is engaged by screw thread with lamp housing 1, it is non-every It is arranged inside lamp housing 1 from circuit board 5 and aluminum substrate 6, the installation that aluminum substrate 6 is used for, non-isolated circuit board 5 is for connecing electricity to lamp The illumination of pearl 7, cooling fin 2 are connected on non-isolated circuit board 5 external cooling of lamp housing 1, lamp bead 7 by two groups of gold threads 10, In, the non-isolated circuit of non-isolated circuit board 5 is improved, relative to traditional circuit, increases multiturn inductance coil, i.e., it is logical The line footpath for improving inductance coil is crossed, the internal resistance of inductance is reduced, inductance calorific value is reduced, to improve the efficiency of 1-2%, using feedback The mode of winding carries out the peak value control of electric current, and when LED power output variation reaches the maximum value of setting, feedback winding obtains foot Enough induced electromotive forces, by Faraday's law, there is no electric energy is directly consumed from circuit, so as to effectively reduce One layer of acrylic layer 12 is arranged in the power loss of bulb lamp inside lampshade 4, realizes 4 He of lampshade using double-shot moulding technology The seamless welding injection molding technology of acrylic layer 12, lampshade 4 are formed using milky white PC, cooperate acrylic layer 12, control lampshade 4 and Asia Gram force layer 12 with a thickness of 0.6mm, light transmittance increases to about 97%, and 12 light transmittance of acrylic layer is about 98.5%, and PC is covered Thickness control in 0.3mm, the thickness control of acrylic layer 12 was both reached in 0.3mm so that seamless welding thickness reaches 0.6mm To Whole PC cover hardness requirement, and meet light transmittance and reach 95% or more ultralow light loss requirement, using array chip 9 as luminous Source, wherein array chip 9 uses multiple semiconductor wafers, and a wafer substrates, the arrangement side of four chips is put in bilateral symmetry side Formula, so that multiple groups chip mutually constitutes easy reflecting system, promotes lamp bead 7 so as to expand the light-emitting area of chip It is low to save temperature drop, reaches light efficiency substantial increase, packing ratio routinely encapsulates high about 5% light transmittance of glue and 7% in silica gel slot 8 The methyl system organic silica gel of left and right refractive index adds fluorescent powder as spread powder, while in the bottom compound reflecting paint of lamp bead 7, So as to play preferable diffusion and refraction effect, therefore the entire brightness with higher when luminous of lamp bead 7, and light transmittance Height, power loss is small, more practical.
The present invention is improved by the non-isolated circuit to non-isolated circuit board 5, is increased multiturn inductance coil, that is, is passed through The line footpath for improving inductance coil, reduces the internal resistance of inductance, reduces inductance calorific value, to improve the efficiency of 1-2%, using feedback around The mode of group carries out the peak value control of electric current, and when LED power output variation reaches the maximum value of setting, feedback winding obtains enough More induced electromotive force, to effectively reduce the power loss of lamp bead 7;By fusion acrylic layer 12 seamless in lampshade 4, By the thickness control of PC cover in 0.3mm, the thickness control of acrylic layer 12 is in 0.3mm, so that seamless welding thickness reaches 0.6mm had not only reached Whole PC cover hardness requirement, but also met light transmittance and reach 95% or more ultralow light loss requirement;By the way that battle array is arranged Column chip 9, array chip 9 use multiple semiconductor wafers, and a wafer substrates, the arrangement side of four chips is put in bilateral symmetry side Formula, so that multiple groups chip mutually constitutes easy reflecting system, promotes lamp bead 7 so as to expand the light-emitting area of chip It is low to save temperature drop, reaches light efficiency substantial increase, packing ratio routinely encapsulates high about 5% light transmittance of glue and 7% in silica gel slot 8 The methyl system organic silica gel of left and right refractive index adds fluorescent powder as spread powder, while in the bottom compound reflecting paint of lamp bead 7, So as to play preferable diffusion and refraction effect.

Claims (7)

1. a kind of ultra-high brightness LED bulb lamp, which is characterized in that including lamp housing (1), the outer surface of the lamp housing (1) is provided with Several groups cooling fin (2), and the downside surface of lamp housing (1) is equipped with screw mount (3), on the inside of the upper end of the lamp housing (1) Insertion is equipped with lampshade (4);
The inner bottom of the lamp housing (1) is provided with non-isolated circuit board (5), and the inner upper end of lamp housing (1) is provided with aluminium base The uper side surface of plate (6), the aluminum substrate (6) is equipped with several groups lamp bead (7), is offered on the inside of the upper end of the lamp bead (7) Silica gel slot (8), and the inner bottom of silica gel slot (8) is provided with array chip (9), the upside of the array chip (9) and lamp bead (7) gold thread (10) are connected between inner surface;
The inner surface of the lampshade (4) is provided with one layer of acrylic layer (12), and is connected with connector sleeve on the downside of lampshade (4) (11)。
2. a kind of ultra-high brightness LED bulb lamp according to claim 1, which is characterized in that the non-isolated circuit board (5) Non-isolated circuit connecting mode are as follows: in the non-isolated circuit board (5), firewire L is concatenated with fuse RF1, and firewire L and zero Line N is respectively connected to the upper and lower ends mouth of electric bridge BD1, the side ports ground connection of electric bridge BD1, another side ports parallel connection of electric bridge BD1 There are resistor R7, inductance coil L1, capacitor C1 and capacitor C2, one end of capacitor C2 is serially connected with multiturn inductance coil L2-1, multiturn One end of inductance coil L2-1 is serially connected with chip, and one end of chip is further connected with diode D1 and multiturn inductance coil L2-2, chip The other end be serially connected with resistor R1, and the other end of chip is also parallel with capacitor C4, resistor R2 and resistor R3, wherein electricity Hold C4, resistor R1 and resistor R2 to connect, one end of resistor R1 is parallel with capacitor C3 and capacitor C5, one end of capacitor C3 It is parallel with resistor R5, the positive grade of one end concatenation LED power of resistor R5, the other end of resistor R5 concatenates LED power Cathode.
3. a kind of ultra-high brightness LED bulb lamp according to claim 1, which is characterized in that the cooling fin (2) is in arcuation Angularly disposed, and concave groove is provided between cooling fin (2), the middle part width of the cooling fin (2) is small to descend both ends thereon Width.
4. a kind of ultra-high brightness LED bulb lamp according to claim 1, which is characterized in that the lampshade (4) in enclose with The periphery setting hollow out of acrylic layer (12), and the lower edge of acrylic layer (12) and lampshade (4) pass through hot-melt adhesive paste.
5. a kind of ultra-high brightness LED bulb lamp according to claim 1, which is characterized in that the array chip (9) includes Multiple groups semiconductor wafer, wherein the left and right of one group of chip is symmetrically arranged with four groups of chips.
6. a kind of ultra-high brightness LED bulb lamp according to claim 1, which is characterized in that the lamp housing (1) and screw thread peace Seat (3) engagement connection is filled, and the lower surface of screw mount (3) is provided with conductive contact.
7. a kind of ultra-high brightness LED bulb lamp according to claim 1, which is characterized in that setting in the silica gel slot (8) There is filler, which is that methyl system organic silica gel and phosphor mixture form.
CN201811419363.3A 2018-11-26 2018-11-26 A kind of ultra-high brightness LED bulb lamp Pending CN109506140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811419363.3A CN109506140A (en) 2018-11-26 2018-11-26 A kind of ultra-high brightness LED bulb lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811419363.3A CN109506140A (en) 2018-11-26 2018-11-26 A kind of ultra-high brightness LED bulb lamp

Publications (1)

Publication Number Publication Date
CN109506140A true CN109506140A (en) 2019-03-22

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CN201811419363.3A Pending CN109506140A (en) 2018-11-26 2018-11-26 A kind of ultra-high brightness LED bulb lamp

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CN (1) CN109506140A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101883453A (en) * 2009-05-05 2010-11-10 海洋王照明科技股份有限公司 LED constant current drive circuit
CN102157487A (en) * 2009-10-23 2011-08-17 马克西姆综合产品公司 Inductors and methods for integrated circuits
CN203549493U (en) * 2013-10-30 2014-04-16 山东明华光电科技有限公司 LED bulb lamp
CN206191508U (en) * 2016-11-25 2017-05-24 东莞华明灯具有限公司 A ya keli lamp shade structure for fluorescent lamp
CN108561767A (en) * 2018-03-12 2018-09-21 浙江永光照明科技有限公司 A kind of LEDbulb lamp

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101883453A (en) * 2009-05-05 2010-11-10 海洋王照明科技股份有限公司 LED constant current drive circuit
CN102157487A (en) * 2009-10-23 2011-08-17 马克西姆综合产品公司 Inductors and methods for integrated circuits
CN203549493U (en) * 2013-10-30 2014-04-16 山东明华光电科技有限公司 LED bulb lamp
CN206191508U (en) * 2016-11-25 2017-05-24 东莞华明灯具有限公司 A ya keli lamp shade structure for fluorescent lamp
CN108561767A (en) * 2018-03-12 2018-09-21 浙江永光照明科技有限公司 A kind of LEDbulb lamp

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Application publication date: 20190322

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