CN109503171A - 一种氮化硅结合碳化硅砖及其制备方法 - Google Patents
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Abstract
本发明公开了一种氮化硅结合碳化硅砖,包括以下重量份数的组分:70~80份的碳化硅,15~20份的碳化硅细粉,2~8份的金属硅,1~5份的苏州土,1~3份的木质素磺酸钙。同时,本发明还公开了上述氮化硅结合碳化硅砖的制备方法。本发明配方设计科学,各组分配合合理,通过加入不同形态的碳化硅来提高各个加热时间段碳化硅与其他原料的融合。
Description
技术领域
本发明属于耐火材料领域,具体涉及一种氮化硅结合碳化硅砖及其制备方法。
背景技术
当前,我国电解铝的铝冶炼企业已建成产能超4500万吨,已运行产能达超3800万吨。大型铝电解预焙槽的电解温度在950~970℃之间,每生产1吨铝消耗约50kg冰晶石、氟化铝、氟化镁等电解质,由于热作用、化学作用、机械冲蚀作用、电作用、钠和电解质的渗透作用等引起的熔盐反应、化学反应,铝电解槽中的阴极炭块使用一定时间后会破损,一般运行4~7年后需进行大修,拆除下来的主要是废阴极炭块、废耐火材料、废保温材料等固体废弃物,通常情况下,每生产1万吨电解铝将产生约100吨废炭素材料(主要为废阴极炭)、约80吨废耐火材料以及一定数量的保温材料。其中,耐火材料除部分高铝耐火砖、耐火泥外,主要的耐火材料就是氮化硅-碳化硅复合材料耐火砖。
氮化硅结合碳化硅砖是指用SiC和Si为原料,经氮化烧成的耐火制品。该制品在20世纪60年代后期首次出现,其特点是以Si3N4为结合剂。Si3N4以针状或纤维状结晶存在于SiC晶粒之间,是一种重要的新型耐火材料。一般含碳化硅70%~75%,氮化硅18%~25%。具有良好抗腐蚀能力,1400℃抗折强度达50~55MPa,显气孔率15%,热膨胀系数(4.5~5.0)×10-2℃。目前氮化硅结合碳化硅砖存在较多缺点,首先氮化硅的成本很高,大量采用将提高生产成本,另外,最为重要的是氮化硅与碳化硅的结合度不高,需要加入添加剂来使两者更好地结合在一起,传统的结合剂无法满足耐高热的要求。
发明内容
发明目的:本发明的目的在于针对现有技术的不足,提供一种氮化硅结合碳化硅砖。
本发明的另一目的在于提供上述氮化硅结合碳化硅砖的制备方法。
技术方案:为了达到上述发明目的,本发明具体是这样来完成的:一种氮化硅结合碳化硅砖,包括以下重量份数的组分:70~80份的碳化硅,15~20份的碳化硅细粉,2~8份的金属硅,1~5份的苏州土,1~3份的木质素磺酸钙。
其中,所述碳化硅细粉细度不大于100μm。
制备氮化硅结合碳化硅砖的方法,包括:按配方量取各原料,将碳化硅,碳化硅细粉,金属硅混匀后形成混合粉料备用;将苏州土,木质素磺酸钙混匀,加入总质量3wt%的水,混匀,再将混匀的混合粉料加入混合,振动压机成型,350℃充分烘干,氮气气氛下加压烧成。
其中,所述氮气气氛下加压烧成包括将烘干后的半成品导入窑炉进行升温,控制升温时间14~18小时,温度升至600℃;继续升温并抽真空,控制时间1~2小时,温度升至700℃;继续升温并冲氮气控制窑内压力不小于1.5个大气压,控制时间8~10小时,温度升至1000℃;继续升温,控制时间8~10小时,温度升至1350℃;当温度到达1350℃时进行2~4小时的保温。
有益效果:本发明与传统技术相比,具有以下优点:
(1) 本发明配方设计科学,各组分配合合理,通过加入不同形态的碳化硅来提高各个加热时间段碳化硅与其他原料的融合;
(2)本发明制备过程中关键点为氮气的加入,在体系内加入氮气后,随着时间的推移大颗粒碳化硅率先与其他物料熔合,而小细度的碳化硅作为游离成分并未与其他物料熔合,当温度升温至1350℃后,小细度碳化硅进入熔融状态,参与其他成分的融化混合,形成高致密度的砖体。
具体实施方式
实施例1:
按重量份数取70份的碳化硅,18份的碳化硅细粉,5份的金属硅,3份的苏州土,1份的木质素磺酸钙,将碳化硅,碳化硅细粉,金属硅混匀后形成混合粉料备用;将苏州土,木质素磺酸钙混匀,加入总质量3wt%的水,混匀,再将混匀的混合粉料加入混合,振动压机成型,350℃充分烘干,将烘干后的半成品导入窑炉进行升温,控制升温时间14~18小时,温度升至600℃;继续升温并抽真空,控制时间1~2小时,温度升至700℃;继续升温并冲氮气控制窑内压力不小于1.5个大气压,控制时间8~10小时,温度升至1000℃;继续升温,控制时间8~10小时,温度升至1350℃;当温度到达1350℃时进行2~4小时的保温。
实施例2:
按重量份数取80份的碳化硅,17份的碳化硅细粉,2份的金属硅,4份的苏州土, 3份的木质素磺酸钙,将碳化硅,碳化硅细粉,金属硅混匀后形成混合粉料备用;将苏州土,木质素磺酸钙混匀,加入总质量3wt%的水,混匀,再将混匀的混合粉料加入混合,振动压机成型,350℃充分烘干,将烘干后的半成品导入窑炉进行升温,控制升温时间14~18小时,温度升至600℃;继续升温并抽真空,控制时间1~2小时,温度升至700℃;继续升温并冲氮气控制窑内压力不小于1.5个大气压,控制时间8~10小时,温度升至1000℃;继续升温,控制时间8~10小时,温度升至1350℃;当温度到达1350℃时进行2~4小时的保温。
实施例3:
按重量份数取72份的碳化硅,15份的碳化硅细粉, 8份的金属硅,2份的苏州土,2份的木质素磺酸钙,将碳化硅,碳化硅细粉,金属硅混匀后形成混合粉料备用;将苏州土,木质素磺酸钙混匀,加入总质量3wt%的水,混匀,再将混匀的混合粉料加入混合,振动压机成型,350℃充分烘干,将烘干后的半成品导入窑炉进行升温,控制升温时间14~18小时,温度升至600℃;继续升温并抽真空,控制时间1~2小时,温度升至700℃;继续升温并冲氮气控制窑内压力不小于1.5个大气压,控制时间8~10小时,温度升至1000℃;继续升温,控制时间8~10小时,温度升至1350℃;当温度到达1350℃时进行2~4小时的保温。
实施例4:
按重量份数取74份的碳化硅,16份的碳化硅细粉,3份的金属硅, 5份的苏州土,3份的木质素磺酸钙,将碳化硅,碳化硅细粉,金属硅混匀后形成混合粉料备用;将苏州土,木质素磺酸钙混匀,加入总质量3wt%的水,混匀,再将混匀的混合粉料加入混合,振动压机成型,350℃充分烘干,将烘干后的半成品导入窑炉进行升温,控制升温时间14~18小时,温度升至600℃;继续升温并抽真空,控制时间1~2小时,温度升至700℃;继续升温并冲氮气控制窑内压力不小于1.5个大气压,控制时间8~10小时,温度升至1000℃;继续升温,控制时间8~10小时,温度升至1350℃;当温度到达1350℃时进行2~4小时的保温。
实施例5:
按重量份数取76份的碳化硅,20份的碳化硅细粉,4份的金属硅,1份的苏州土,1份的木质素磺酸钙,将碳化硅,碳化硅细粉,金属硅混匀后形成混合粉料备用;将苏州土,木质素磺酸钙混匀,加入总质量3wt%的水,混匀,再将混匀的混合粉料加入混合,振动压机成型,350℃充分烘干,将烘干后的半成品导入窑炉进行升温,控制升温时间14~18小时,温度升至600℃;继续升温并抽真空,控制时间1~2小时,温度升至700℃;继续升温并冲氮气控制窑内压力不小于1.5个大气压,控制时间8~10小时,温度升至1000℃;继续升温,控制时间8~10小时,温度升至1350℃;当温度到达1350℃时进行2~4小时的保温。
Claims (4)
1.一种氮化硅结合碳化硅砖,其特征在于,包括以下重量份数的组分:70~80份的碳化硅,15~20份的碳化硅细粉,2~8份的金属硅,1~5份的苏州土,1~3份的木质素磺酸钙。
2.根据权利要求1所述的氮化硅结合碳化硅砖,其特征在于,所述碳化硅细粉细度不大于100μm。
3.制备权利要求1所述氮化硅结合碳化硅砖的方法,其特征在于,包括:按配方量取各原料,将碳化硅,碳化硅细粉,金属硅混匀后形成混合粉料备用;将苏州土,木质素磺酸钙混匀,加入总质量3wt%的水,混匀,再将混匀的混合粉料加入混合,振动压机成型,350℃充分烘干,氮气气氛下加压烧成。
4.根据权利要求3所述制备氮化硅结合碳化硅砖的方法,其特征在于,所述氮气气氛下加压烧成包括将烘干后的半成品导入窑炉进行升温,控制升温时间14~18小时,温度升至600℃;继续升温并抽真空,控制时间1~2小时,温度升至700℃;继续升温并冲氮气控制窑内压力不小于1.5个大气压,控制时间8~10小时,温度升至1000℃;继续升温,控制时间8~10小时,温度升至1350℃;当温度到达1350℃时进行2~4小时的保温。
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CN115417674A (zh) * | 2022-10-14 | 2022-12-02 | 郴州市拓道新材料科技有限公司 | 一种耐磨的氮化硅/碳化硅复合陶瓷及其制备方法和应用 |
CN116178026A (zh) * | 2022-12-05 | 2023-05-30 | 山西华钠碳能科技有限责任公司 | 一种用于电池材料烧结的匣钵及其制备方法和应用 |
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CN116178026A (zh) * | 2022-12-05 | 2023-05-30 | 山西华钠碳能科技有限责任公司 | 一种用于电池材料烧结的匣钵及其制备方法和应用 |
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