CN109495083B - Bipolar electrically-controlled attenuator - Google Patents
Bipolar electrically-controlled attenuator Download PDFInfo
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- CN109495083B CN109495083B CN201811155132.6A CN201811155132A CN109495083B CN 109495083 B CN109495083 B CN 109495083B CN 201811155132 A CN201811155132 A CN 201811155132A CN 109495083 B CN109495083 B CN 109495083B
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
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Abstract
The invention provides a bipolar electrically-adjusted attenuator, which comprises a radio frequency circuit and a control circuit, wherein the radio frequency circuit is connected with the control circuit; the radio frequency circuit comprises a first LC compensation circuit, a first balun circuit, a first impedance transformation circuit, a PIN diode array circuit, a second impedance transformation circuit, a second balun circuit and a second LC compensation circuit which are electrically connected in sequence; the control circuit comprises a voltage conditioning circuit, a voltage reconditioning circuit, a first voltage-to-current conversion circuit and a first segmented linear fitting circuit which are sequentially and electrically connected, wherein the output end of the voltage conditioning circuit is electrically connected with the second segmented linear fitting circuit through a second voltage-to-current conversion circuit; the PIN diode array circuit is electrically connected with the first voltage-to-current conversion circuit and the second voltage-to-current conversion circuit respectively; the PIN diode array circuit adopts a structure of four rows of PIN diode arrays; the invention has the characteristics of wide application frequency band, small insertion loss, small nonlinear distortion, large dynamic range, approximate linearity of control characteristics and the like.
Description
Technical Field
The invention relates to the technical field of signal processing and electromagnetic compatibility, in particular to a bipolar electrically-tuned attenuator.
Background
The adaptive radiation interference cancellation technology is an effective method for solving the interference of the receiving and transmitting antennas of the communication systems such as ships and warships and the like on the same platform, and the main idea is to actively suppress the co-location strong interference signals by adopting the equal-amplitude reverse phase cancellation technology. The basic principle is that a reference signal is extracted from a transmitting antenna of a communication transmitting system as an interference source, the reference signal is processed and then input between a receiving antenna and a receiver of an interfered communication receiving system, and equal-amplitude reverse cancellation is carried out on an interference signal directly received by the receiving antenna, so that the interference signal coupled through space radiation is prevented from entering the receiver, the interference of the receiver is eliminated, and the transmitting and receiving system can work simultaneously. The method can also be used to solve the problem of mutual interference between multiple transceivers.
The bipolar electrically-tunable attenuator is one of the key devices in an interference cancellation system, and generally utilizes the characteristic that the radio-frequency resistance of an FET or a PIN diode changes with voltage or current to realize the control of attenuation. The electrically-tuned attenuator based on the bridge structure has the characteristics of small insertion loss, strong linear control and the like, but has a complex design structure and a small attenuation dynamic range. Therefore, there is a need to develop an electrically tunable attenuator, which overcomes the drawbacks of the existing methods and optimizes the structural design and the dynamic range of attenuation.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a bipolar electrically-tunable attenuator which has the characteristics of wide application frequency band, small insertion loss, small nonlinear distortion, large dynamic range, approximately linear control characteristic and the like.
The invention provides a bipolar electrically-adjusted attenuator which is characterized by comprising a radio frequency circuit and a control circuit; the radio frequency circuit comprises a first LC compensation circuit, a first balun circuit, a first impedance transformation circuit, a PIN diode array circuit, a second impedance transformation circuit, a second balun circuit and a second LC compensation circuit which are electrically connected in sequence; the control circuit comprises a voltage conditioning circuit, a voltage reconditioning circuit, a first voltage-to-current conversion circuit and a first segmented linear fitting circuit which are sequentially and electrically connected, wherein the output end of the voltage conditioning circuit is electrically connected with the second segmented linear fitting circuit through a second voltage-to-current conversion circuit; the PIN diode array circuit is electrically connected with the first voltage-to-current conversion circuit and the second voltage-to-current conversion circuit respectively; the PIN diode array circuit adopts a structure of four rows of PIN diode arrays; a radio frequency signal enters the LC compensation circuit from a radio frequency input end, a control signal passes through a control voltage input interface, and one path of the control signal passes through the voltage conditioning circuit and the piecewise linear fitting circuit to control the states of two rows of PIN diodes in the PIN diode array; and after the other path of the voltage is reconditioned, the states of the other two rows of PIN diodes are controlled through a piecewise linear fitting circuit.
In the above technical solution, the balun circuit and the impedance transformer are designed by using a transmission line transformer.
In the technical scheme, each row of PIN diodes of the PIN diode array circuit is formed by respectively connecting N diodes in series, a tail end diode of a first row of PIN diodes and a head end diode of a second row of PIN diodes are connected in series through a first inductor, and a tail end diode of a third row of PIN diodes and a head end diode of a fourth row of PIN diodes are connected in series through a second inductor; the head end and the tail end of each row of PIN diodes are respectively connected with a capacitor in series; head end diodes of the first row of PIN diodes and the fourth row of PIN diodes are electrically connected with the output end at one side of the first impedance transformation circuit through corresponding head end capacitors; head end diodes of the second row of PIN diodes and the third row of PIN diodes are electrically connected with the output end of the other side of the first impedance transformation circuit through corresponding head end capacitors; the tail end diodes of the first row of PIN diodes and the third row of PIN diodes are electrically connected with the input end at one side of the second impedance transformation circuit through corresponding tail end capacitors; the tail end diodes of the second row of PIN diodes and the fourth row of PIN diodes are electrically connected with the input end at the other side of the second impedance transformation circuit through corresponding tail end capacitors; an external power supply is electrically connected to anodes of head end diodes of the first row of PIN diodes and the third row of PIN diodes through inductors respectively; the input terminals of the first voltage-to-current conversion circuit and the second voltage-to-current conversion circuit are electrically connected to the cathodes of the end diodes of the second row and the fourth row of PIN diodes, respectively, via inductors.
In the above technical solution, the voltage conditioning circuit includes a first operational amplifier, a negative input terminal of which is electrically connected to an output terminal through a resistor Ri2, the negative input terminal of which is connected to an external control voltage through a resistor Ri1, a positive input terminal of which is connected to an input voltage VP1 through a resistor Ri4, and a positive input terminal of which is grounded through a resistor Ri 3.
In the above technical solution, the voltage reconditioning circuit includes a third operational amplifier, a negative input terminal of the third operational amplifier is electrically connected to the output terminal through a resistor RD6, the negative input terminal is connected to the output terminal of the voltage reconditioning circuit through a resistor RD5, a positive input terminal of the third operational amplifier is connected to the input voltage VP2 through a resistor RD8, and a positive input terminal of the third operational amplifier is grounded through a resistor RD 7.
In the above technical solution, the first voltage-to-current conversion circuit includes a fourth operational amplifier and a field effect transistor N2; the negative input end of the voltage regulator is electrically connected with the output end through a resistor RD10, the negative input end of the voltage regulator is connected with the output end of the voltage reconditioning circuit through a resistor RD9, the positive input end of the voltage regulator is connected with an input voltage VP3 through a resistor RD10, and the positive input end of the voltage regulator is grounded through a resistor RD 11; the output end of the transistor is electrically connected with the grid electrode of the field effect transistor N2; the drain electrode of the field effect triode N2 is electrically connected with the output end of the PIN diode array circuit; the source of the field effect transistor N2 is electrically connected to the first segmented linear fit circuit.
In the above technical solution, the second voltage-to-current conversion circuit includes a second operational amplifier and a field effect transistor N1; the negative input end of the voltage regulation circuit is electrically connected with the output end through a resistor RD2, the negative input end of the voltage regulation circuit is connected with the output end of the voltage regulation circuit through a resistor RD1, the positive input end of the voltage regulation circuit is connected with an input voltage VP3 through a resistor RD4, and the positive input end of the voltage regulation circuit is grounded through a resistor RD 3; the output end of the transistor is electrically connected with the grid electrode of the field effect transistor N1; the drain electrode of the field effect triode N12 is electrically connected with the output end of the PIN diode array circuit; the source of the field effect transistor N1 is electrically connected to the second piecewise linear fit circuit.
In the technical scheme, the first segmented linear fitting circuit comprises M parallel branches, each branch is provided with a resistor, and the resistors of each branch are respectively connected with 0-M-1 diodes in series; the anode of the diode is connected with the source electrode of the triode N2; the cathode of the diode is grounded.
In the technical scheme, the second segmented linear fitting circuit comprises M parallel branches, each branch is provided with a resistor, and the resistors of each branch are respectively connected with 0-M-1 diodes in series; the anode of the diode is connected with the source electrode of the triode N1; the cathode of the diode is grounded.
The invention realizes large attenuation dynamic range by adopting the structure of four rows of PIN diode arrays; each row of PIN diodes realizes high-power capacity by adopting a structure that a plurality of PIN diodes with the same number are connected in series. The control circuit of the invention adopts a method that diodes with different numbers are connected in series and then connected in parallel, so that the control curve approaches to an ideal control curve in a segmented manner. The internal characteristic impedance of the bipolar electrically-tunable attenuator can be matched with the 50-ohm characteristic impedance of the port through the transmission line transformer and the LC compensation circuit. The electrically-tuned attenuator has the characteristics of simple structure, symmetrical layout, small nonlinear distortion, large power capacity, wide applicable frequency band and the like, thereby being particularly suitable for a broadband high-power self-adaptive interference cancellation system or similar application occasions
Drawings
FIG. 1 is a block diagram of the structure of the present invention
FIG. 2 shows an example of the RF circuit of the present invention
FIG. 3 an example of a control circuit of the present invention
Detailed Description
The invention will be further described in detail with reference to the following drawings and specific examples, which are not intended to limit the invention, but are for clear understanding.
As shown in fig. 1, a bipolar electrically-tunable attenuator is provided, which is characterized by comprising a radio frequency circuit and a control circuit; the radio frequency circuit comprises a first LC compensation circuit, a first balun circuit, a first impedance transformation circuit, a PIN diode array circuit, a second impedance transformation circuit, a second balun circuit and a second LC compensation circuit which are electrically connected in sequence; the control circuit comprises a voltage conditioning circuit, a voltage reconditioning circuit, a first voltage-to-current conversion circuit and a first segmented linear fitting circuit which are sequentially and electrically connected, wherein the output end of the voltage conditioning circuit is electrically connected with the second segmented linear fitting circuit through a second voltage-to-current conversion circuit; the PIN diode array circuit is electrically connected with the first voltage-to-current conversion circuit and the second voltage-to-current conversion circuit respectively; the PIN diode array circuit adopts a structure of four rows of PIN diode arrays; a radio frequency signal enters the LC compensation circuit from a radio frequency input end, a control signal passes through a control voltage input interface, and one path of the control signal passes through the voltage conditioning circuit and the first sectional linear fitting circuit to control the states of two rows of PIN diodes in the PIN diode array; and after the other path of the voltage is reconditioned, the states of the other two rows of PIN diodes are controlled through a second segmented linear fitting circuit. The control circuit is used for converting the control signal into a current signal for controlling the change of the radio frequency resistance of the PIN diode
As shown in fig. 2, RF1 is the input of a radio frequency signal; the series inductor Lm1 and the parallel capacitors Cm1 and Cm2 optimize input end impedance matching, and TLF1 and TLF2 are respectively balun and impedance converters based on transmission line transformer design, and respectively realize voltage balance-to-unbalance conversion and impedance conversion of front and rear stages of a radio frequency path.
In the technical scheme, each row of PIN diodes of the PIN diode array circuit is formed by connecting N diodes in series respectively, a tail end diode of a first row of PIN diodes is connected with a head end diode of a second row of PIN diodes in series, and a tail end diode of a third row of PIN diodes is connected with a head end diode of a fourth row of PIN diodes in series; the head end and the tail end of each row of PIN diodes are respectively connected with a capacitor in series; head end diodes of the first row of PIN diodes and the fourth row of PIN diodes are electrically connected with an output end on one side of the first impedance transformation circuit; head end diodes of the second row of PIN diodes and the third row of PIN diodes are electrically connected with the output end of the other side of the first impedance transformation circuit; the tail end diodes of the first row of PIN diodes and the third row of PIN diodes are electrically connected with the input end at one side of the second impedance transformation circuit; the tail end diodes of the PIN diodes in the second row and the fourth row are electrically connected with the input end of the other side of the second impedance transformation circuit; an external power supply is electrically connected to anodes of head end diodes of the first row of PIN diodes and the third row of PIN diodes through inductors respectively; the input terminals of the first voltage-to-current conversion circuit and the second voltage-to-current conversion circuit are electrically connected to the cathodes of the end diodes of the second row and the fourth row of PIN diodes, respectively, via inductors. The PIN diode array circuit is the core of the bipolar electrically-regulated attenuator, wherein n diodes in total of D11, D12, … and D1n and C1 and C2 capacitors form a first row, n diodes in total of D21, D22, … and D2n and C3 and C4 capacitors form a second row, n diodes in total of D31, D32, … and D3n and C5 and C6 capacitors form a third row, and n diodes in total of D41, D42, … and D4n and C7 and C8 capacitors form a fourth row; each row of capacitors connected in series is used for isolating direct current control signals, and the inductors L1, L3, L4 and L6 are used for isolating radio frequency signals, so that the radio frequency signals are prevented from being shunted and the control signals are prevented from being influenced; the inductors L2 and L5 are used for isolating two rows of direct-current series radio frequency signals and avoiding the mutual influence of the two rows of radio frequency signals; the CP1 and CP2 are used for power filtering and reducing the influence of the radio frequency signal on the control signal.
As shown in fig. 3, the voltage conditioning circuit includes a first operational amplifier, a negative input terminal of which is electrically connected to an output terminal via a resistor Ri2, the negative input terminal of which is connected to an external control voltage via a resistor Ri1, a positive input terminal of which is connected to an input voltage VP1 via a resistor Ri4, and a positive input terminal of which is grounded via a resistor Ri 3. The voltage reconditioning circuit comprises a third operational amplifier, wherein the negative input end of the third operational amplifier is electrically connected with the output end through a resistor RD6, the negative input end of the third operational amplifier is connected with the output end of the voltage reconditioning circuit through a resistor RD5, the positive input end of the third operational amplifier is connected with an input voltage VP2 through a resistor RD8, and the positive input end of the third operational amplifier is grounded through a resistor RD 7. The voltage conditioning circuit and the voltage reconditioning circuit are based on an operational amplifier linear operational circuit, and the input voltages VP1, VP2 are output voltages for the first and third elevated operational amplifiers. The resistors Ri1-Ri4 and RD5-RD8 are selected according to requirements.
In the above technical solution, the first voltage-to-current conversion circuit includes a fourth operational amplifier and a field effect transistor N2; the negative input end of the voltage regulator is electrically connected with the output end through a resistor RD10, the negative input end of the voltage regulator is connected with the output end of the voltage reconditioning circuit through a resistor RD9, the positive input end of the voltage regulator is connected with an input voltage VP3 through a resistor RD10, and the positive input end of the voltage regulator is grounded through a resistor RD 11; the output end of the transistor is electrically connected with the grid electrode of the field effect transistor N2; the drain electrode of the field effect triode N2 is electrically connected with the output end of the PIN diode array circuit; the source of the field effect transistor N2 is electrically connected to the first segmented linear fit circuit. The second voltage-to-current conversion circuit comprises a second operational amplifier and a field effect transistor N1; the negative input end of the voltage regulation circuit is electrically connected with the output end through a resistor RD2, the negative input end of the voltage regulation circuit is connected with the output end of the voltage regulation circuit through a resistor RD1, the positive input end of the voltage regulation circuit is connected with an input voltage VP3 through a resistor RD4, and the positive input end of the voltage regulation circuit is grounded through a resistor RD 3; the output end of the transistor is electrically connected with the grid electrode of the field effect transistor N1; the drain electrode of the field effect triode N12 is electrically connected with the output end of the PIN diode array circuit; the source of the field effect transistor N1 is electrically connected to the second piecewise linear fit circuit. The two voltage-to-current conversion circuits are used for converting the preceding-stage voltage into the required current, the structures and the circuit parameters of the two voltage-to-current conversion circuits are consistent, and the two voltage-to-current conversion circuits are composed of an operational amplifier linear operation circuit and a field effect triode circuit, the operational amplifier linear operation circuit provides the grid-source voltage of a field effect tube, the change of the grid-source voltage controls the change of the drain-source current of the field effect tube, so that the changed bias current is provided for a PIN diode array in a radio frequency circuit, and the input voltage VP3 is used for raising the output voltage of a second operational amplifier and a fourth operational amplifier.
In the technical scheme, the first segmented linear fitting circuit comprises M parallel branches, each branch is provided with a resistor, and the resistors of each branch are respectively connected with 0-M-1 diodes in series; the anode of the diode is connected with the source electrode of the triode N2; the cathode of the diode is grounded. The second segmented linear fitting circuit comprises M parallel branches, each branch is provided with a resistor, and the resistors of each branch are respectively connected with 0-M-1 diodes in series; the anode of the diode is connected with the source electrode of the triode N1; the cathode of the diode is grounded. The two piecewise linear fitting circuits are used for adjusting drain-source current of the field effect transistor into piecewise linear current, and better impedance matching and lower nonlinear distortion of the radio frequency circuit are achieved. The first and second segmented linear fitting circuits are composed of a plurality of parallel branches, wherein one branch is provided with a resistor, and the other branch is composed of resistors connected in series with different numbers of diodes and used for changing the variable slope of current along with control voltage in a segmented manner. In the embodiment, 4 parallel branches are provided, and the number of diodes in the branches of the series diodes is 1, 2 and 3 respectively. The interfaces OUTA and OUTB of the control circuit and the RF circuit are interchangeable according to the bipolar requirements of the RF circuit.
It is worth noting that in different application occasions, the control of the bipolar electrically-tunable attenuator can be realized by adopting different control circuits. Therefore, the attenuator designed according to the above-mentioned bipolar electrically-tunable attenuator structure, using different control circuits, should also be within the protection scope of the present invention.
In addition, the bipolar electrically-adjustable attenuator can be applied to the technical field of self-adaptive radiation interference cancellation, and can also meet the requirements of other occasions
Details not described in this specification are within the skill of the art that are well known to those skilled in the art.
Claims (7)
1. A bipolar electrically-tunable attenuator is characterized by comprising a radio frequency circuit and a control circuit; the radio frequency circuit comprises a first LC compensation circuit, a first balun circuit, a first impedance transformation circuit, a PIN diode array circuit, a second impedance transformation circuit, a second balun circuit and a second LC compensation circuit which are electrically connected in sequence; the control circuit comprises a voltage conditioning circuit, a voltage reconditioning circuit, a first voltage-to-current conversion circuit and a first segmented linear fitting circuit which are sequentially and electrically connected, wherein the output end of the voltage conditioning circuit is electrically connected with the second segmented linear fitting circuit through a second voltage-to-current conversion circuit; the PIN diode array circuit is electrically connected with the first voltage-to-current conversion circuit and the second voltage-to-current conversion circuit respectively; the PIN diode array circuit adopts a structure of four rows of PIN diode arrays; a radio frequency signal enters the LC compensation circuit from a radio frequency input end, a control signal passes through a control voltage input interface, and one path of the control signal passes through the voltage conditioning circuit and the piecewise linear fitting circuit to control the states of two rows of PIN diodes in the PIN diode array; after the other path of voltage is recuperated, the states of the other two rows of PIN diodes are controlled through a piecewise linear fitting circuit;
the first voltage-to-current conversion circuit comprises a fourth operational amplifier and a field effect transistor N2; the negative input end of the fourth operational amplifier is electrically connected with the output end of the fourth operational amplifier through a resistor RD10, the negative input end of the fourth operational amplifier is connected with the output end of the voltage reconditioning circuit through a resistor RD9, the positive input end of the fourth operational amplifier is connected with an input voltage VP3 through a resistor RD10, and the positive input end of the fourth operational amplifier is grounded through a resistor RD 11; the output end of the fourth operational amplifier is electrically connected with the grid electrode of the field effect triode N2; the drain electrode of the field effect triode N2 is electrically connected with the output end of the PIN diode array circuit; the source electrode of the field effect triode N2 is electrically connected with the first segmented linear fitting circuit;
the second voltage-to-current conversion circuit comprises a second operational amplifier and a field effect transistor N1; the negative input end of the second operational amplifier is electrically connected with the output end of the second operational amplifier through a resistor RD2, the negative input end of the second operational amplifier is connected with the output end of the voltage conditioning circuit through a resistor RD1, the positive input end of the second operational amplifier is connected with an input voltage VP3 through a resistor RD4, and the positive input end of the second operational amplifier is grounded through a resistor RD 3; the output end of the second operational amplifier is electrically connected with the grid electrode of the field effect triode N1; the drain electrode of the field effect triode N12 is electrically connected with the output end of the PIN diode array circuit; the source of the field effect transistor N1 is electrically connected to the second piecewise linear fit circuit.
2. The bipolar electrically tunable attenuator of claim 1, wherein: the balun circuit and the impedance transformer are designed by adopting a transmission line transformer.
3. The bipolar electrically-tunable attenuator according to claim 1, wherein each row of PIN diodes of the PIN diode array circuit is formed by connecting N diodes in series, a tail end diode of the first row of PIN diodes is connected in series with a head end diode of the second row of PIN diodes through a first inductor, and a tail end diode of the third row of PIN diodes is connected in series with a head end diode of the fourth row of PIN diodes through a second inductor; the head end and the tail end of each row of PIN diodes are respectively connected with a capacitor in series; head end diodes of the first row of PIN diodes and the fourth row of PIN diodes are electrically connected with the output end at one side of the first impedance transformation circuit through corresponding head end capacitors; head end diodes of the second row of PIN diodes and the third row of PIN diodes are electrically connected with the output end of the other side of the first impedance transformation circuit through corresponding head end capacitors; the tail end diodes of the first row of PIN diodes and the third row of PIN diodes are electrically connected with the input end at one side of the second impedance transformation circuit through corresponding tail end capacitors; the tail end diodes of the second row of PIN diodes and the fourth row of PIN diodes are electrically connected with the input end at the other side of the second impedance transformation circuit through corresponding tail end capacitors; an external power supply is electrically connected to anodes of head end diodes of the first row of PIN diodes and the third row of PIN diodes through inductors respectively; the input terminals of the first voltage-to-current conversion circuit and the second voltage-to-current conversion circuit are electrically connected to the cathodes of the end diodes of the second row and the fourth row of PIN diodes, respectively, via inductors.
4. The bipolar electrically tunable attenuator of claim 3, wherein the voltage conditioning circuit comprises a negative input terminal of the first operational amplifier electrically connected to the output terminal of the first operational amplifier via a resistor Ri2, a negative input terminal of the first operational amplifier electrically connected to the external control voltage via a resistor Ri1, a positive input terminal of the first operational amplifier electrically connected to the input voltage VP1 via a resistor Ri4, and a positive input terminal of the first operational amplifier electrically connected to the ground via a resistor Ri 3.
5. The bipolar electrically tunable attenuator of claim 4, wherein the voltage reconditioning circuit comprises a third operational amplifier, a negative input terminal of the third operational amplifier is electrically connected to an output terminal of the third operational amplifier via a resistor RD6, a negative input terminal of the third operational amplifier is connected to an output terminal of the voltage reconditioning circuit via a resistor RD5, a positive input terminal of the third operational amplifier is connected to the input voltage VP2 via a resistor RD8, and a positive input terminal of the third operational amplifier is grounded via a resistor RD 7.
6. The bipolar electrically adjustable attenuator according to claim 4, wherein the first segmented linear fitting circuit comprises M parallel branches, each branch is provided with a resistor, and the resistors of each branch are respectively connected in series with 0 to M-1 diodes; the anode of the diode is connected with the source electrode of the triode N2; the cathode of the diode is grounded.
7. The bipolar electrically adjustable attenuator according to claim 2, wherein the second piecewise linear fitting circuit comprises M parallel branches, each branch is provided with a resistor, and the resistors of each branch are respectively connected in series with 0 to M-1 diodes; the anode of the diode is connected with the source electrode of the triode N1; the cathode of the diode is grounded.
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