CN109494177B - Sensor monocrystalline silicon etching device - Google Patents
Sensor monocrystalline silicon etching device Download PDFInfo
- Publication number
- CN109494177B CN109494177B CN201811067589.1A CN201811067589A CN109494177B CN 109494177 B CN109494177 B CN 109494177B CN 201811067589 A CN201811067589 A CN 201811067589A CN 109494177 B CN109494177 B CN 109494177B
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- Prior art keywords
- fixedly connected
- sleeve
- reaction chamber
- rack
- wall
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
The invention relates to the technical field of etching devices, in particular to a sensor monocrystalline silicon etching device, wherein a sleeve is fixedly connected to a first rack, a plurality of sliding grooves are uniformly formed in the inner wall of the sleeve, a sliding block is connected in the sliding grooves in the inner wall of the sleeve in a sliding manner, a reaction chamber is fixedly connected with the outer wall of the sliding block, a first hydraulic cylinder is fixedly connected to a second rack, a piston rod of the first hydraulic cylinder is fixedly connected with the reaction chamber, a sliding groove corresponding to the sliding groove in the inner wall of the sleeve is formed in the outer wall of the sleeve, a mounting plate is connected in the sliding groove in the outer wall of the sleeve in a sliding manner, a plurality of threaded holes are uniformly formed in the mounting plate, a plurality of mounting rings are fixedly connected to the mounting; the invention has the advantages of convenient taking and placing, high flexibility, wide adjusting range and the like.
Description
Technical Field
The invention relates to the technical field of etching devices, in particular to a sensor monocrystalline silicon etching device.
Background
In the processing process of monocrystalline silicon for a sensor, the monocrystalline silicon needs to be etched, the existing etching mode is that the monocrystalline silicon is placed on a support, and then reaction gas is introduced into the support of the monocrystalline silicon, so that the reaction gas generates plasma in an electric field environment to etch the monocrystalline silicon; the existing etching device uses a straight cylinder type reaction container, and etches monocrystalline silicon by matching an electric field generated by a rotating electromagnetic coil with reaction gas; however, the column type etching device is complicated to use, and the process of taking and placing the monocrystalline silicon is complicated, so that the working efficiency is low; and the distance between the coils on the existing etching device is fixed and cannot be adjusted, so that the flexibility is low.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a sensor silicon single crystal etching apparatus, which is used to solve the problem that the taking and placing processes of the existing silicon single crystal etching apparatus are complicated.
In order to achieve the purpose and other related purposes, the invention discloses a sensor monocrystalline silicon etching device which comprises a first rack, a sleeve and a second rack, wherein the sleeve is fixedly connected to the first rack, a plurality of sliding grooves are uniformly formed in the inner wall of the sleeve, sliding blocks are connected in the sliding grooves in the inner wall of the sleeve in a sliding mode, a reaction chamber is fixedly connected with the outer wall of each sliding block, a first hydraulic cylinder is fixedly connected to the second rack, and a piston rod of the first hydraulic cylinder is fixedly connected with the reaction chamber.
Preferably: the mounting device comprises a gear, wherein a sliding groove corresponding to the sliding groove in the inner wall of the sleeve is formed in the outer wall of the sleeve, a mounting plate is connected in the sliding groove in the outer wall of the sleeve in a sliding manner, a plurality of threaded holes are uniformly formed in the mounting plate, a plurality of mounting rings are fixedly connected to the mounting plate through bolts matched with the threaded holes, a coil is rotatably connected to each mounting ring, a toothed ring is fixedly connected to the outer wall of the coil, and a servo motor is fixedly connected to a second rack; one end of the gear is fixedly connected with an output shaft of the servo motor, the other end of the gear is rotatably connected with the second rack, and the gear is meshed with the gear ring; and two side walls of the rack are fixedly connected with a plurality of second hydraulic cylinders, and piston rods of the second hydraulic cylinders are fixedly connected with the mounting plate respectively.
Preferably: the air inlet pipe and the air outlet pipe which are communicated with the reaction chamber are fixedly connected to the side walls of the left end and the right end of the reaction chamber respectively, the placing frames are fixedly connected to the inner walls of the left end and the right end of the reaction chamber, and the door plates are arranged on the arc-shaped side walls of the reaction chamber.
Preferably: and the second rack is fixedly connected with an electric cabinet, and a PLC (programmable logic controller) in the electric cabinet is electrically connected with the first hydraulic cylinder, the servo motor and the second hydraulic cylinder respectively.
Preferably: the second hydraulic cylinders are the same as the mounting plates in number and are four.
As described above, the sensor monocrystalline silicon etching device of the present invention has the following beneficial effects: the first hydraulic cylinder can drive the reaction chamber to slide rightwards in the sliding groove in the inner wall of the sleeve, so that the monocrystalline silicon is convenient to take and place; the mounting plate can be driven to slide left and right in the sliding groove in the outer wall of the sleeve through the hydraulic cylinder II, and the position of the coil can be flexibly and accurately changed; through the screw hole that sets up on the mounting panel, the regulation coil that can be nimble and the distance between the coil.
Drawings
FIG. 1 is a front view of a sensor single crystal silicon etching apparatus of the present invention.
FIG. 2 is a front view of a reaction chamber of the present invention.
Fig. 3 is a left side view of the sleeve of the present invention.
Wherein: the device comprises a first rack 1, a sleeve 2, a sliding groove 21, a mounting plate 3, a threaded hole 31, a mounting ring 4, a coil 5, a toothed ring 6, a reaction chamber 7, an air inlet pipe 71, an air outlet pipe 72, a sliding block 8, a placing frame 9, a second rack 10, a first hydraulic cylinder 11, a servo motor 12, a gear 13, a second hydraulic cylinder 14 and an electric cabinet 15.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Example 1
As shown in fig. 1-3, the invention discloses a sensor monocrystalline silicon etching device, which comprises a first frame 1, a sleeve 2 and a second frame 10, wherein the sleeve 2 is fixedly connected to the first frame 1, a plurality of sliding grooves 21 are uniformly formed in the inner wall of the sleeve 2, a sliding block 8 is slidably connected in the sliding groove 21 in the inner wall of the sleeve 2, a reaction chamber 7 is fixedly connected with the outer wall of the sliding block 8, a first hydraulic cylinder 11 is fixedly connected to the second frame 10, and a piston rod of the first hydraulic cylinder 11 is fixedly connected with the reaction chamber 7.
Preferably: the device comprises a gear 13, a sliding groove 21 corresponding to the position of the sliding groove 21 on the inner wall of the sleeve 2 is formed in the outer wall of the sleeve 2, a mounting plate 3 is connected in the sliding groove 21 on the outer wall of the sleeve 2 in a sliding mode, a plurality of threaded holes 31 are uniformly formed in the mounting plate 3, a plurality of mounting rings 4 are fixedly connected to the mounting plate 3 through bolts matched with the threaded holes 31, a coil 5 is rotatably connected to the mounting rings 4, a toothed ring 6 is fixedly connected to the outer wall of the coil 5, and a servo motor 12 is fixedly connected to a second rack 10; one end of the gear 13 is fixedly connected with an output shaft of the servo motor 12, the other end of the gear 13 is rotatably connected with the second rack 10, and the gear 13 is meshed with the gear ring 6; the side wall of the second frame 10 is fixedly connected with a plurality of second hydraulic cylinders 14, and piston rods of the second hydraulic cylinders 14 are fixedly connected with the mounting plate 3 respectively.
Preferably: the gas inlet pipe 71 and the gas outlet pipe 72 which are communicated with the reaction chamber 7 are fixedly connected to the side walls of the left end and the right end of the reaction chamber 7 respectively, the placing frames 9 are fixedly connected to the inner walls of the left end and the right end of the reaction chamber 7, and door plates are arranged on the arc-shaped side walls of the reaction chamber 7.
Preferably: the second frame 10 is fixedly connected with an electric cabinet 15, and a PLC (programmable logic controller) in the electric cabinet 15 is electrically connected with the first hydraulic cylinder 11, the servo motor 12 and the second hydraulic cylinder 14 respectively.
Preferably: the second hydraulic cylinders 14 are the same as the mounting plate 3 in number and are all four.
The invention is implemented as follows:
according to the scheme (shown in figure 2), the monocrystalline silicon to be etched is placed in the placing frame 9 through the door plate, and then the door plate is closed;
according to the scheme shown in the figure 1 and the figure 3, a first hydraulic cylinder 11 is started, and the first hydraulic cylinder 11 drives a reaction chamber 7 to enter a sleeve 2 along a chute 21; because the mounting plate 3 is uniformly provided with the threaded holes 31, and the mounting plate 3 is fixedly connected with the mounting rings 4 through the bolts matched with the threaded holes 31, the positions of the mounting rings 4 relative to the mounting plate 3 can be adjusted as required; then the mounting plate 3 is driven to move through the second hydraulic cylinder 14, so that the position of the coil 5 relative to the sleeve 2 is adjusted; then, starting a servo motor 12, wherein the servo motor 12 drives a gear ring 6 to rotate through a gear 13, and further drives a coil 5 to rotate; the reaction gas is then supplied to the reaction chamber 7 through the gas inlet pipe 71 and discharged through the gas outlet pipe 72.
The invention has the beneficial effects that:
the hydraulic cylinder I11 can drive the reaction chamber 7 to slide rightwards in the sliding groove 21 on the inner wall of the sleeve 2, so that the monocrystalline silicon is convenient to take and place; the mounting plate 3 can be driven to slide left and right in the sliding groove 21 on the outer wall of the sleeve 2 through the second hydraulic cylinder 14, and the position of the coil 5 can be flexibly and accurately changed; the distance between the coils 5 and 5 can be flexibly adjusted by the screw holes 31 provided in the mounting plate 3.
Finally, it should be noted that: the above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention; thus, while the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted; all such modifications and variations are intended to be included herein within the scope of this disclosure and the present invention and protected by the following claims.
Claims (3)
1. The utility model provides a sensor monocrystalline silicon etching device, includes frame one, sleeve, frame two, gear, reaction chamber, its characterized in that: the sleeve is fixedly connected to the first rack, a plurality of sliding grooves are uniformly formed in the inner wall of the sleeve, a sliding block is connected in the sliding groove in the inner wall of the sleeve in a sliding mode, the reaction chamber is fixedly connected with the outer wall of the sliding block, the first hydraulic cylinder is fixedly connected to the second rack, and a piston rod of the first hydraulic cylinder is fixedly connected with the reaction chamber; the mounting plate is evenly provided with a plurality of threaded holes, the mounting plate is fixedly connected with a plurality of mounting rings through bolts matched with the threaded holes, the mounting rings are rotatably connected with coils, the outer walls of the coils are fixedly connected with toothed rings, and the second rack is fixedly connected with a servo motor; one end of the gear is fixedly connected with an output shaft of the servo motor, the other end of the gear is rotatably connected with the second rack, and the gear is meshed with the gear ring; two side walls of the rack are fixedly connected with a plurality of second hydraulic cylinders, and piston rods of the second hydraulic cylinders are fixedly connected with the mounting plate respectively; the air inlet pipe and the air outlet pipe which are communicated with the reaction chamber are fixedly connected to the side walls of the left end and the right end of the reaction chamber respectively, the placing frames are fixedly connected to the inner walls of the left end and the right end of the reaction chamber, and the door plates are arranged on the arc-shaped side walls of the reaction chamber.
2. The sensor monocrystalline silicon etching device according to claim 1, characterized in that: and the second rack is fixedly connected with an electric cabinet, and a PLC (programmable logic controller) in the electric cabinet is electrically connected with the first hydraulic cylinder, the servo motor and the second hydraulic cylinder respectively.
3. The sensor monocrystalline silicon etching device according to claim 2, characterized in that: the second hydraulic cylinders are the same as the mounting plates in number and are four.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811067589.1A CN109494177B (en) | 2018-09-13 | 2018-09-13 | Sensor monocrystalline silicon etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811067589.1A CN109494177B (en) | 2018-09-13 | 2018-09-13 | Sensor monocrystalline silicon etching device |
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| Publication Number | Publication Date |
|---|---|
| CN109494177A CN109494177A (en) | 2019-03-19 |
| CN109494177B true CN109494177B (en) | 2021-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811067589.1A Active CN109494177B (en) | 2018-09-13 | 2018-09-13 | Sensor monocrystalline silicon etching device |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022852A (en) * | 2016-11-01 | 2018-05-11 | 中微半导体设备(上海)有限公司 | ICP etching machine bench and its insulated window thin film heater device and temprature control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332384A (en) * | 2011-09-26 | 2012-01-25 | 中国科学院微电子研究所 | Device and method for producing neutral particle beams |
| US9384948B2 (en) * | 2013-06-13 | 2016-07-05 | Lam Research Corporation | Hammerhead TCP coil support for high RF power conductor etch systems |
| KR101568653B1 (en) * | 2013-11-12 | 2015-11-12 | (주)얼라이드 테크 파인더즈 | Plasma device |
| CN104988582B (en) * | 2015-07-09 | 2017-08-11 | 重庆德尔森传感器技术有限公司 | The sensor monocrystalline silicon etching device of equipment operating efficiency can be improved |
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- 2018-09-13 CN CN201811067589.1A patent/CN109494177B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022852A (en) * | 2016-11-01 | 2018-05-11 | 中微半导体设备(上海)有限公司 | ICP etching machine bench and its insulated window thin film heater device and temprature control method |
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| CN109494177A (en) | 2019-03-19 |
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