CN109478523A - The flaw detection apparatus of wide band gap semiconducter substrate - Google Patents
The flaw detection apparatus of wide band gap semiconducter substrate Download PDFInfo
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- CN109478523A CN109478523A CN201780044105.9A CN201780044105A CN109478523A CN 109478523 A CN109478523 A CN 109478523A CN 201780044105 A CN201780044105 A CN 201780044105A CN 109478523 A CN109478523 A CN 109478523A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/068—Optics, miscellaneous
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Abstract
Flaw detection apparatus is provided, the coverage of check object can be made variable, although and use simple apparatus structure, it can quickly and reliably carry out the inspection of defect, additionally it is possible to prevent the extension of defect.Specifically, the flaw detection apparatus checks the defect for resulting from wide band gap semiconducter substrate, the flaw detection apparatus has excitation illumination part and fluorescence shoot part, with the object lens that multiple observation multiplying powers are different in fluorescence shoot part, and there is the shooting multiplying power switching part that selection switching is carried out to any one in multiple object lens, there is the irradiation multiplying power changing unit changed to the range of exposures and energy density of exciting light in excitation illumination part, the flaw detection apparatus has control unit, the control unit is according to the observation multiplying power of the object lens selected in shooting multiplying power switching part, the range of exposures and energy density of exciting light in illumination multiplying power changing unit are changed.
Description
Technical field
The present invention relates to the device checked defect, which results from is formed by wide band gap semiconducter substrate
Epitaxial layer, or result from the material itself for constituting wide band gap semiconducter substrate.
Background technique
The structure (so-called SiC epitaxial substrate) that epitaxial layer is formd in SiC substrate is wide band gap semiconducter, be with
Solar power generation, hybrid vehicle, electric car universal and the power semiconductor being concerned.But SiC epitaxial base
Plate still has a large amount of defect crystallization, therefore needs to carry out exhaustive test to be used as power semiconductor.
Wherein, the crystal defect of referred to as basal surface dislocation (dislocation) be as pn maqting type diode just
To characteristic reduce will because stacking fault defect extend the reason of.Therefore, it is proposed to reduce comprising including basal surface dislocation
The manufacturing method (for example, patent document 1) of the density of crystal defect.
Also, it was proposed in the past through luminescence generated by light (PL) method and checks the technology (example of the crystal defect of SiC epitaxial substrate
Such as, patent document 2).
Alternatively, proposing the technology (for example, patent document 3) for non-destructively detecting defect using X-ray topography.
In addition, proposing following technology: in the fluorescence microscope for observing organism sample, in a manner of zoom
Change observation multiplying power, and with the variation of the zoom ratio, to the size (i.e. diaphragm diameter) of the field stop of working flare system
It is adjusted, to only illuminate exciting light in observed range, prevents from irradiating sample unwanted light (that is, preventing from marking
This colour fading) (for example, patent document 4).
Existing technical literature
Patent document
Patent document 1: International Publication WO2014/097448
Patent document 2: No. 3917154 bulletins of Japanese Patent
Patent document 3: Japanese Unexamined Patent Publication 2009-44083 bulletin
Patent document 3: Japanese Unexamined Patent Publication 10-123425 bulletin
Summary of the invention
Problems to be solved by the invention
Resulting from the defect of SiC epitaxial substrate, there are multiple types, different according to the type of defect, to the device produced
Service life and performance bring influence it is different.Therefore, in order to which the quantity of the defect before and after the improvement to manufacturing method, size carry out
Compare and be confirmed whether to show improved effect, or in order to implement the product inspection before factory, is strongly required only promptly
Extract particular kind of defect.
But using luminescence generated by light (PL) method by grayscale camera to the wave of infrared light region as patent document 2
In the case that length is shot, the time is not only spent to obtain the image needed for checking, but also can not be reliably to defect
Type is classified.
On the other hand, in the case where using X-ray topography as patent document 3, although can be with nondestructive
Mode is checked, but to spend the time to obtain the image needed for checking, but also needs to penetrate for irradiating high-intensitive X
The large-scale particular facility of line.
Also, in the inspection using the SiC epitaxial substrate of PL method, there is the shooting variable power for wishing to make check object
Demand, on the other hand, when irradiating exciting light too much to check object region, it is also possible to make Defect expanding, therefore deposit
It is desirable that minimal demand needed for the irradiation of exciting light is suppressed to.
But the diaphragm diameter of working flare system is being adjusted with the change of observation multiplying power as patent document 4
In the mode of section, compared with the shooting with low range, in powerful shooting, the deficiency in light quantity of exciting light, shooting time
It can be elongated.Accordingly, there exist the projects of time needed for can not shortening shooting.
Therefore, the purpose of the present invention is to provide flaw detection apparatus, and the coverage of check object can be made variable, and
Although, can be than the quickly and reliably inspection of progress defect in the past, additionally it is possible to prevent and using simple apparatus structure
The extension of defect.
Means for solving the problems
To solve the above problem, one embodiment of the present invention is flaw detection apparatus, is partly led to broad-band gap is resulted from
The defect of structure base board is checked, which is characterized in that the flaw detection apparatus includes
Illumination part is excited, irradiates exciting light towards wide band gap semiconducter substrate；And
Fluorescence shoot part claps the luminescence generated by light issued because exciting light is irradiated to wide band gap semiconducter substrate
It takes the photograph,
With the object lens that multiple observation multiplying powers are different in fluorescence shoot part, and have to any in multiple object lens
One carries out the shooting multiplying power switching part of selection switching,
Have in excitation illumination part and the irradiation multiplying power that the range of exposures and energy density of exciting light change is become
More portion,
The flaw detection apparatus has control unit, and the control unit is according to the object lens selected in shooting multiplying power switching part
Multiplying power is observed, the range of exposures and energy density of the exciting light in illumination multiplying power changing unit are changed.
Invention effect
The coverage of check object can be made variable, although and use simple apparatus structure, can than with
Toward the inspection for quickly and reliably carrying out defect, additionally it is possible to prevent the extension of defect.
Detailed description of the invention
Fig. 1 is the integrally-built skeleton diagram for showing an example for implementing mode of the invention.
Fig. 2 is the skeleton diagram for showing the major part of an example for implementing mode of the invention.
Fig. 3 is the perspective view for schematically showing the various defects as check object.
Fig. 4 is the figure of the substrate for being shown as check object and the fluorescent emission properties of various defects.
Fig. 5 is to schematically illustrate the signal of the black white image and color image of various defects captured by the present invention
Figure.
Fig. 6 is the integrally-built skeleton diagram for showing an example for implementing other modes of the invention.
Fig. 7 is the integrally-built skeleton diagram for showing an example for implementing another mode of the invention.
Specific embodiment
Hereinafter, being illustrated using attached drawing to mode for carrying out the present invention.
In addition, in the various figures, horizontal direction is expressed as the direction x, the direction y, by the direction vertical with x/y plane (that is, weight
Power direction) it is expressed as the direction z.
Fig. 1 is the integrally-built skeleton diagram for showing an example for implementing mode of the invention, is diagrammatically described
Constitute the configuration of each section of flaw detection apparatus 1.
Flaw detection apparatus 1 of the invention checks the defect for resulting from wide band gap semiconducter substrate W.It is specific and
Speech, flaw detection apparatus 1 have excitation illumination part 2, fluorescence shoot part 3, defect inspection portion 4 and control unit 5 etc..In addition,
There is board holder 8 and relative movement portion 9 in flaw detection apparatus 1.
Illumination part 2 is excited to irradiate exciting light L1 towards wide band gap semiconducter substrate W.Specifically, excitation illumination part 2
With excitation light irradiation unit 20, projecting lens 22,23 and irradiation multiplying power changing unit 25 etc..Excite illumination part 2 by peace
Dress metalwork (not shown) etc. is installed on device frame 1f.
Fig. 2 is the skeleton diagram for showing the major part of an example for implementing mode of the invention, is shown when change projection
When interval between lens 22,23, the case where range of exposures F (such as F1~F3) of exciting light L1 changes.
The light energy in the source for exciting light irradiation unit 20 to generate as exciting light L1 has light source 21.Specifically, can be with
It exemplifies the excitation with the light emitting diode (so-called UV-LED) that emission wavelength ingredient is 365nm or so as light source 21
Light irradiation unit 20.
Projecting lens 22,23 assembles the exciting light L1 issued from light source 21 and projects/be irradiated to wide band gap semiconducter base
Set range of exposures F on plate W.Specifically, projecting lens 22,23 is by comprising one to multiple convex lens or concavees lens
Compound lens etc. is constituted.
Irradiation multiplying power changing unit 25 changes the range of exposures and energy density of exciting light L1.Specifically, irradiation
Multiplying power changing unit 25 changes the distance between the multiple lens 22,23 for passing through exciting light L1.More specifically, it irradiates
Multiplying power changing unit 25 is made of electric actuator, is equipped with lens 23 on the sliding block 26 of electric actuator.Electric actuator is
According to the mechanism that the control signal from control unit 5 keeps sliding block mobile/static, lens 23 can be made move/to be still in position P1
~P3.That is, making lens 23 relative to lens 22 away from or approaching to change projection illumination to wide band gap semiconducter substrate W
Positive exciting light L1 range of exposures F and energy density.At this point, if the energy of the light radiated from light source 21 is identical, when
When lens 23 being made to be moved to position P1~P3, according to the mode substantially inversely proportional with the area ratio of each range of exposures F1~F3,
The convergence degree of exciting light L1 changes, and energy density changes.If such as the ruler in length and breadth of each range of exposures F1, F2, F3
Very little ratio substantially 4:2:1, then each range of exposures F1, F2, F3 exciting light L1 energy density ratio substantially 1:
4:16.
In addition, preset position P1~P3 of sliding block 26 (i.e. lens 23), so as to make the range of exposures F of exciting light L1 at
For with each object lens 30a~30c phase is fitted used in fluorescence shoot part 3 range of exposures F1~F3.
3 couples of the fluorescence shoot part luminescence generated by light L2 issued because exciting light L1 is irradiated to wide band gap semiconducter substrate W are carried out
Shooting.
Specifically, fluorescence shoot part 3 has lens section 30, shooting multiplying power switching part 31, fluorescence optical filtering portion 32 and claps
Camera 33 etc..Fluorescence shoot part 3 is installed on device frame 1f by installation metalwork (not shown) etc..
Lens section 30 makes the image plane at the position as check object of wide band gap semiconducter substrate W project/image in bat
The imaging sensor 34 of camera 33.Specifically, the object lens that lens section 30 has multiple observation multiplying powers different.It is more specific and
Speech has object lens 30b and observation multiplying power that the object lens 30a that observation multiplying power is 5 times, observation multiplying power are 10 times in lens section 30
For 20 times of object lens 30c.
Shooting multiplying power switching part 31 selects any one in multiple object lens 30a~30c possessed by lens section 30
Select switching.Specifically, shooting multiplying power switching part 31 is made of electrical actuator mechanism, it is equipped in electrical actuator mechanism
Each object lens 30a~30c.More specifically, electrical actuator mechanism be according to from control unit 5 control signal sliding/it is static
Mechanism, the object lens for using which multiplying power are selectively switched over.
Fluorescence optical filtering portion 32 is absorbed or is reflected to the wavelength components of exciting light L1 and exciting light L1 is made to decay, and
Pass through the luminescence generated by light L2 issued from the position as check object.Specifically, fluorescence optical filtering portion 32 is by being configured at lens
Bandpass optical filter between portion 30 and shooting camera 33 is constituted.More specifically, the bandpass optical filter is to contained by exciting light L1
Wavelength components (in the above cases, are the light of ultraviolet range.Especially wavelength is 385nm light below) and infrared region
The light in domain (such as wavelength is 800nm or more) is absorbed or is reflected and makes its decaying, and wave contained in luminescence generated by light L2 is made
Long ultraviolet light and visible light than 385nm long passes through.
Shooting camera 33 shoots the luminescence generated by light L2 for having passed through fluorescence optical filtering portion 32, is output to the outside video signal
(analog signal) or image data (digital signal).Shooting camera 33 has imaging sensor 34.
34 pairs of the imaging sensor light energies received carry out time Series Processing and are gradually converted into electric signal.It is specific and
Speech, imaging sensor 45 may be exemplified out area sensor made of multiple light receiving element two-dimensional arrangements, more specifically, figure
As sensor 45 by with ccd image sensor, cmos image sensor etc. black and white camera or color camera constitute.
The image according to captured by fluorescence shoot part 3 of defect inspection portion 4 is checked.Specifically, defect inspection portion 4 by
Computer (hardware) and its execution program (software) with image processing function are constituted.
More specifically, if to defect inspection portion 4 input from shooting camera 33 export video signal (analog signal) or
Image data (digital signal), then according to the grayscale information of image (such as brightness value.If color image, then also comprising form and aspect,
The colors such as lightness, chroma) and defect candidate is extracted, and determine it is which kind of defect kind, be finely divided class to defect kind, into
The counting of row defect and the output of location information etc. (so-called defect inspection).
[type of defect]
Fig. 3 is to schematically illustrate the perspective view of the type of the defect as check object.
Here, the type as the defect for resulting from wide band gap semiconducter substrate W, exemplifies and results from SiC substrate W1
It is formed by the various defects of the inside of SiC epitaxial layer W2.Also, the basal surface B of epitaxial layer W2 is represented by the dotted line.Also,
In figure, the direction of growth of defect is represented as with the direction x at defined angle and along the direction of basal surface B.
About the defect as check object of the invention, the basal surface included in SiC epitaxial layer is typically enumerated
The stacking fault defect E2 included in dislocation E1 and SiC epitaxial layer.In addition, though stacking fault defect E2 is referred to as " stacking
Stacking fault defects ", but can further disaggregated classification at type the defects of 1SSF~4SSF.Wherein, 1SSF is also referred to as list Xiao Keli
Stacking fault (Single Shockley Stacking Fault).Equally, the also referred to as double Xiao Keli stacking faults of 2SSF
(Double Shockley Stacking Fault), 3SSF is also referred to as three Xiao Keli stacking fault (Triple Shockley
Stacking Fault), 4SSF is also referred to as four Xiao Keli stacking faults (Quadruple Shockley Stacking
Fault)。
Fig. 4 is the figure of the substrate for being shown as check object and the fluorescent emission properties of various defects, and showing horizontal axis is
An example of wavelength, the intensity that the longitudinal axis is fluorescence radiation.
The luminescence generated by light L2 issued from wide band gap semiconducter substrate W, which is contained, to be both not present " basal surface dislocation " or is not depositing
Based on the luminous wavelength components (predominantly 385~395nm) of band edge and based on impurity energy in the case where " stacking fault defect "
The wavelength components (predominantly 450~700nm) of luminous (so-called D-A is to luminous) of grade.
On the other hand, it if wide band gap semiconducter substrate W has " basal surface dislocation ", is sent out from the basal surface dislocations
Luminescence generated by light L2 out mainly releases the light that the light that wavelength is 610nm or more, particularly wavelength are 750nm or so.
On the other hand, if wide band gap semiconducter substrate W has " stacking fault defect ", from the stacking fault defect portion
Position, according to the defect kind of stacking fault defect, if mainly releasing wavelength if 1SSF is the luminescence generated by light near 420nm,
If mainly releasing wavelength if 2SSF is the luminescence generated by light near 500nm, if mainly releasing wavelength if 3SSF is 480nm
Neighbouring luminescence generated by light, if mainly releasing wavelength if 4SSF is the luminescence generated by light near 460nm.Also, in addition to it is above-mentioned it
Outside, the stacking fault defect for releasing that wavelength is 600nm luminescence generated by light below has been further acknowledged.
[extraction of defect]
Fig. 5 is the schematic diagram for schematically showing the black white image and color image of various defects captured by the present invention.
Fig. 5 show the various defects in the case that image taken by shooting camera 33 is black white image gray level image image and
The appearance of various defects in the case where for color image.In addition, in order to be compared, further it is shown that clapped according to conventional art
The gray level image image for the various defects in image (being shot to the luminescence generated by light of infrared region) taken the photograph.In addition, for side
Just, it for color image, is carried out replacing explanation with black and white, for the difference of colouring information, the appropriate type for changing shade, and
And the visual performance and main wavelength components of captured luminescence generated by light are recorded and are demonstrated by together.
In defect inspection portion 4 of the invention, executes following a series of program processing: acquired image is carried out
Image procossing, region or the position for extracting the grayscale information or colouring information different from background image are candidate as defect, according to
Prespecified determinating reference carries out defect inspection.
Control unit 5 is according to the observation multiplying power of the object lens selected in shooting multiplying power switching part 30, to illumination multiplying power change
The range of exposures F and energy density of exciting light L1 in portion 20 is changed.
Control unit 5 is connect with irradiation multiplying power changing unit 25, shooting multiplying power switching part 31 respectively, and electric actuator can be made sliding
Dynamic/static and object lens 30a~30c used in switching, additionally is able to position P1~P3 of change sliding block 26.Therefore, control unit 5
It can select using any one in multiple object lens 30a~30c, and can be according to the excitation for the multiplying power for becoming suitable object lens
The mode of range of exposures F1~F3 of light L1 changes the distance between lens 22 and lens 23.That is, control unit 5 is configured to
It can link with the observation multiplying power of used object lens 30a~30c and the range of exposures F and energy density of exciting light L1 are carried out
Change.
In addition, control unit 5 also with check device 1 the defects of the substrate holding mechanism of board holder 8 and relative movement portion 9
Possessed each equipment connection, can carry out integrated control to each equipment.Specifically, control unit 5 has computer CP, can compile
The hardware such as journey logic controller (also referred to as sequencer) and its execution program (software), by operation panel or are opened according to operator
Close class (not shown) and carry out operation, various setting data and execute program to carry out the control of each equipment.
Board holder 8 keeps the wide band gap semiconducter substrate W as check object using defined posture.Specifically
For, can example go out to pass through negative-pressure adsorption plate or electrostatic attraction board, hold the substrate holding mechanisms such as chuck mechanism to broad-band gap
The board holder 8 that semiconductor substrate W is kept, board holder 8 are arranged to upper surface level.
Relative movement portion 9 relatively moves board holder 8 relative to excitation illumination part 2 and fluorescence shoot part 3.Specifically
For, relative movement portion 9 include in X direction or Y-direction extend track 91X, 91Y, they are installed on device frame 1f；
And sliding block 92X, 92Y, they are on its track according to the speed of regulation is mobile or defined position on its track is quiet
Only；Etc..Also, board holder 8 is installed on sliding block 92Y.
Sliding block 92X, 92Y are connect via amplifier unit of control etc. with control unit 5, can be according to from control unit
5 control signal is static according to the speed movement of regulation, or defined position on that track on track 91X, 91Y.
More specifically, (step and repeat) mode is repeated according to following so-called stepping and carry out image acquisition: for inspection
Image is obtained and (shot) to carry out under static state, after being moved to next camera site, in order to carry out image again
It obtains and becomes stationary state.
Due to using such composition, flaw detection apparatus 1 of the invention can make the inspection of wide band gap semiconducter substrate W
The coverage of object is variable, although and use simple apparatus structure, it can be than quickly and reliably carrying out in the past
The inspection of defect, additionally it is possible to prevent the extension of defect.
In addition, as the embodiment of excitation illumination part 2, exemplifying has irradiation multiplying power changing unit 25 among the above
Structure, and exemplify irradiation multiplying power changing unit 25 by the distance between lens of change projecting lens 22,23 to excitation
The mode that the range of exposures F (such as F1~F3) and energy density of light L1 is changed.It, then can be with institute if such mode
It needs minimal lens number to constitute excitation illumination part 2, and is able to carry out multistage multiplying power change, therefore be preferred
's.In addition, can steeply set the inside and outside of range of exposures F1~F3 of exciting light L1 by using projecting lens 22,23
Light quantity difference, even if change range of exposures, can also prevent energy loss, and can change the energy in range of exposures F1~F3
Density.
[other modes]
But on the basis of implementing the present invention, it is not limited to mode as described above, or following side
Formula: with the different projecting lens of multiple projection multiplying powers as excitation illumination part, irradiation multiplying power changing unit is to making exciting light L1
By projecting lens switch over.
Fig. 6 is the skeleton diagram for showing the major part of an example for implementing other modes of the invention, exemplifies replacement
It excites illumination part 2 and there is the mode for exciting illumination part 2B.
Excite illumination part 2B have excitation light irradiation unit 20, irradiation multiplying power changing unit 25B and projecting lens 28a~
28c etc..The excitation light irradiation unit 20 and irradiation multiplying power changing unit 25B for constituting excitation illumination part 2B are by installation metalwork
(not shown) etc. is installed on device frame 1f.
The composition of light irradiation unit 20 is excited to excite 20 phase of light irradiation unit with possessed by above-mentioned excitation illumination part 2
Together, therefore detailed description is omitted.
Irradiation multiplying power changing unit 25B is made of turntable type lens rest and revolving actuator.Revolving actuator is according to coming from
The control signal of control unit 5 makes turntable type lens rest rotary/static in defined angle.On turntable type lens rest respectively
The different projecting lens 28a~28c of projection multiplying power is installed.
Projecting lens 28a~28c assembles simultaneously the exciting light L1 issued from the light source 21 of excitation light irradiation unit 20
Project/be irradiated to range of exposures F set on wide band gap semiconducter substrate W.Specifically, projecting lens 28a~28c will be from
The light that light source 21 issues projects to range of exposures F1~F3 according to the projection multiplying power of regulation, they are respectively by extremely multiple comprising one
Compound lens of convex lens or concavees lens etc. is constituted.
Illumination part 2B is excited to use such composition, therefore can be according to the control signal from control unit 5 to making
Projecting lens 28a~28c is switched over, can be to projection illumination to the positive exciting light of wide band gap semiconducter substrate W
The range of exposures F (such as F1~F3) and energy density of L1 is changed.Also, projecting lens 28a~28c is distinguished into needle in advance
Range of exposures F1~F3 of exciting light L1 is optimized, so as to steeply set the range of exposures F1 of exciting light L1
The inside and outside light quantity difference of~F3, even if change range of exposures, can also prevent energy loss, and can change range of exposures F1
Energy density in~F3, is therefore preferred.
In addition, irradiation multiplying power changing unit of the invention is not limited to the above-mentioned side for showing and being illustrated in Fig. 1 or Fig. 6
Formula (i.e. irradiation multiplying power changing unit 25,25B), even if can also implement the present invention for following such modes.
Fig. 7 is the skeleton diagram for showing the major part of an example for implementing another mode of the invention, exemplifies replacement
Above-mentioned excitation illumination part 2,25B and have excitation illumination part 2C mode.
Excite illumination part 2C that there is excitation light irradiation unit (not shown), diffuser plate 24, projecting lens 22,23 and shine
Penetrate multiplying power changing unit 25 etc..Excitation light irradiation unit, which may be exemplified out, carries out guide-lighting composition to lamp source etc. using light guide, from
Light guide injection part 29 projects exciting light L1.In addition, according to making the exciting light L1 irradiated from light guide injection part 29 be irradiated to diffuser plate
Mode on 24 configures.Diffuser plate 24 improves the illuminance uniformity in the face of irradiation exciting light L1.Also, across diffuser plate 24
And the position opposed with light guide injection part 29 is configured with projecting lens 22,23.
Projecting lens 22,23 is emitted onto diffuser plate 24 and the exciting light L1 projection illumination that passes through is to wide band gap semiconducter base
On the front of plate W.Also, constitute the projecting lens 22 of excitation illumination part 2C, 23, diffuser plate 24, irradiation multiplying power changing unit 25B
It is installed on device frame 1f by installation metalwork (not shown) etc..In addition, on the sliding block 26 of irradiation multiplying power changing unit 25
Light guide injection part 29 is installed.In addition, projecting lens 22,23 possessed by excitation illumination part 2C and irradiation multiplying power changing unit 25
Composition and projecting lens 22,23 possessed by above-mentioned excitation illumination part 2 and irradiation multiplying power changing unit 25 it is roughly the same, therefore
Detailed description is omitted.
It excites illumination part 2C in this manner, therefore is made to irradiate multiplying power according to the control signal from control unit 5
The sliding block 26 (i.e. light guide injection part 29) of changing unit 25 move/is still in position P1~P3, to change projection illumination to width
The range of exposures F and energy density of the positive exciting light L1 of gap semiconductor substrate W.In addition, presetting the position of sliding block 26
Set P1~P3, so as to make exciting light L1 range of exposures F become respectively with object lens 30a~30c used in fluorescence shoot part 3
Mutually suitable range of exposures F1~F3.
It excites illumination part 2C to use such composition, therefore light guide is projected according to the control signal from control unit 5
Position P1~the P3 in portion 29 is switched over, so as to the positive exciting light to projection illumination to wide band gap semiconducter substrate W
The range of exposures F (such as F1~F3) and energy density of L1 is changed.In this case, although the range of exposures of exciting light L1
The inside and outside light quantity difference of F1~F3 is precipitous unlike above-mentioned excitation illumination part 2,2B, but can utilize more easy device
Structure is close to the range of exposures F (such as F1~F3) and energy of the positive exciting light L1 for being irradiated to wide band gap semiconducter substrate W
Degree changes, and is therefore preferred.
In addition, irradiation multiplying power changing unit of the invention is not limited to such mode, or following mode: using tool
There are excitation light irradiation unit 20 and projecting lens 22 and irradiate the composition of exciting light L1 according to certain extended corner, shines exciting light
Penetrate unit 20 and projecting lens 22 integrally relative to wide band gap semiconducter substrate W close to or away from.
Even if irradiation multiplying power changing unit is such mode, projection illumination can be also changed to wide band gap semiconducter substrate W
Positive exciting light L1 range of exposures F (such as F1~F3) and energy density, the present invention can be implemented.
[as the substrate of check object, the type of defect]
Among the above, a type of the wide band gap semiconducter substrate W as check object, which instantiates, makes epitaxial layer in SiC
The type of grown on substrates shows to the inside for resulting from the epitaxial layer and checks with the defect at the interface of SiC substrate
Mode.
But as wide band gap semiconducter, it is not limited to SiC substrate, or the substrate being made of semiconductors such as GaN.
Also, the wavelength of irradiated exciting light L1 is suitably set according to the material of the substrate as check object.Also, according to
The material of substrate as check object, the wavelength L1 of exciting light and relative to the luminescence generated by light L2 of defect kind characteristic and fit
When setting is used for the grayscale information or colouring information of taxonomic defficiency type.
In addition, flaw detection apparatus 1 of the invention can not only be applied to resulting from wide band gap semiconducter substrate W just
The inspection of the defect of epitaxial layer is formed by face, additionally it is possible to applied to the material for resulting from composition wide band gap semiconducter substrate W
Expect the inspection of the defect of itself.
In addition, the defect as check object is not limited to foregoing illustrative defect, or micro-pipe penetrates spiral position
Mistake runs through dislocation defects or the other kinds of defects such as edge dislocation.Also, according to these kinds as the defect of test object
Class suitably sets the wavelength of exciting light L1 and the wavelength of the luminescence generated by light L2 passed through from fluorescence optical filtering portion 20 (that is, fluorescence filters
The filter wavelength in portion 20).
[exciting light/fluorescence filters variation]
Among the above, exemplifying following composition: the excitation light irradiation unit 20 of excitation illumination part 2 is made with UV-LED
For light source, the light that illumination wavelength is 365nm or so is as the light that exciting light L1, luminescence generated by light L2 are that wavelength is 385~800nm
(i.e. close to the ultraviolet light of visible light region or even the light of visible light region).
But the wavelength components of exciting light L1 are suitably determined i.e. according to the type of substrate or defect as check object
It can.Similarly, make the light of which kind of wavelength band by (i.e. about the luminescence generated by light L2 as the reference object for defect inspection
Filter), it is suitably determined according to the wavelength of the type of substrate, defect as check object or exciting light L1.
Specifically, if the various defects as check object generate in the SiC epitaxial layer being grown in SiC substrate,
Then illumination wavelength is the light of 375nm or less (so-called ultraviolet light) as exciting light L1, if generating on being grown on GaN substrate
In GaN epitaxial layer, then illumination wavelength is 365nm deep ultraviolet light below as exciting light L1.
For example, if as check object various defects generate in the GaN epitaxial layer being grown in GaN substrate, and swash
The wavelength of luminous L1 is the deep ultraviolet light near 300nm, and luminescence generated by light L2 is the purple close to the visible light region of 350~400nm
Outer light is then used as Fluirescence observation optical filter, uses the spy for making 350nm wavelength attenuation below, passing through the wavelength of 350nm or more
The Fluirescence observation optical filter of property.
In addition, being not limited to UV-LED as light source 21 possessed by excitation light irradiation unit 20, it is also possible to use and swashs
The composition of optical generator or laser diode, xenon lamp etc..For example, if it is the feelings for using laser oscillator or laser diode
Condition is then configured to wavelength as defined in irradiating using the so-called UV laser for being composed YAG laser, YVO4 laser and THG
Exciting light L1.On the other hand, if it is using the white light sources such as xenon lamp or metal halide lamp, mercury xenon lamp, mercury vapor lamp
The case where, then be configured to using make the wavelength components of exciting light L1 by wavelength components in addition to this carry out absorb or
The UV transmitting filter of reflection or dichronic mirror etc. are come the exciting light L1 of wavelength as defined in irradiating.In addition, light source 21 can be selected suitably
The modes such as optical point source or area source set the focal length or allocation position of projecting lens according to the mode of light source.
In addition, fluorescence optical filtering portion 32 is not limited to composition as described above, it can also be by being applied to object lens 30a~30c or figure
As the coated film on the surface of sensor 35 is constituted.
[variation of shooting multiplying power switching part]
Among the above, as shooting multiplying power switching part 31, exemplify according to the control signal from control unit 5 and slide/
Static electrical actuator mechanism.But shooting multiplying power switching part 31 is also possible to by other means to object lens 30a~30c
The structure switched over, can be by the structures such as electrodynamic transducer mechanism of rotary/static according to the control signal from control unit 5
At.
[variation of control unit]
On the basis of implementing the present invention, in the side for carrying out image acquisition using stepping repetitive mode as described above
In the case where formula, preferably during mobile to next camera site, becomes do not irradiate (the so-called pass exciting light L1 in advance
Lamp) state.
Specifically, using following composition: illumination unit 20 is connect with control unit 5, by remote operation,
By the ON/OFF (ON/OFF) of the electric current for projecting illumination light or the opening and closing of gate, to the ON/OFF (ON/OFF) of exciting light L1
Switch over control.If such composition, then control unit 5 irradiates exciting light L1 when being shot using shooting camera 33,
It then can be switched to the state for not irradiating exciting light L1 (so-called to turn off the light) during mobile to next camera site, in width
When non-inspection (i.e.) does not irradiate unwanted exciting light L1 in the movement of gap semiconductor substrate W, therefore can be improved defect
Extension prevents effect.
But control is switched over to the ON/OFF of exciting light L1 (ON/OFF) and is not required in that function, if low
In the case that the energy densities such as the observation of multiplying power are low, compared with the time needed for the review time in the phase mobile to next position
Between irradiate exciting light L1 time it is shorter situation it is inferior effect hardly is come to the expansion bands of defect, then can begin
Irradiation exciting light L1 eventually.
[relative movement portion/shooting camera variation]
In addition, as an example in relative movement portion 9, exemplifying and being obtained using stepping repetitive mode progress image among the above
The mode taken, but on the basis of implementing the present invention, it is not limited to such mode, or carry out using scanning mode
The mode that image obtains.
Specifically, may be exemplified out following such modes.
(1) using the shooting camera with area sensor, exciting light L1 is issued according to strobe mode.
(2) the shooting camera of tool wired sensor or tdi sensor is used, always prolonged exposure exciting light L1.At this point, pressing
According to the length direction of line sensor or tdi sensor and relative movement portion 9 scanning direction intersect (preferred vertical) mode it is pre-
First configure.
In addition, as an example in relative movement portion 9, illustration, which is sent as an envoy to, loads the base of wide band gap semiconducter substrate W among the above
Plate maintaining part 8 is in the x-direction and the z-direction relative to the excitation illumination part 2 and fluorescence shoot part 3 being mounted on device frame 1f
Mobile mode.But relative movement portion 9 is not limited to such composition, or following such modes.
(1) make that illumination part 2 and fluorescence shoot part 3 is excited to move in X-direction or Y-direction, make board holder 8 in Y
It is moved in direction or X-direction.
(2) make that illumination part 2 and fluorescence shoot part 3 is excited to move in the x-direction and the z-direction, board holder 8 is solid in advance
Due on device frame 1f.
Label declaration
1: flaw detection apparatus；2: excitation illumination part；3: fluorescence shoot part；4: defect inspection portion；5: control unit；8: base
Plate maintaining part；9: relative movement portion；20: excitation light irradiation unit；21: light source；22: projecting lens；23: projecting lens；24: expanding
It falls apart；25: irradiation multiplying power changing unit；26: sliding block；27: irradiation multiplying power changing unit；28a~28b: projecting lens；29: light guide is penetrated
Portion out；30: lens section；30a~30c: object lens；31: shooting multiplying power switching part；32: fluorescence optical filtering portion；33: shooting camera；34:
Imaging sensor；L1: exciting light；L2: luminescence generated by light；W: wide band gap semiconducter substrate (check object)；W1: substrate (SiC, GaN
Deng)；W2: epitaxial layer；E1: basal surface dislocation；E2: stacking fault defect；F: range of exposures；F1: range of exposures is (for 5 times
Object lens)；F2: range of exposures (object lens for 10 times)；F3: range of exposures (object lens for 20 times).
Claims (3)
1. a kind of flaw detection apparatus checks the defect for resulting from wide band gap semiconducter substrate, which is characterized in that
The flaw detection apparatus includes
Illumination part is excited, irradiates exciting light towards the wide band gap semiconducter substrate；And
Fluorescence shoot part carries out the luminescence generated by light issued because the exciting light is irradiated to the wide band gap semiconducter substrate
Shooting,
With the object lens that multiple observation multiplying powers are different in the fluorescence shoot part, and have to any in multiple object lens
One carries out the shooting multiplying power switching part of selection switching,
There is the irradiation times changed to the range of exposures and energy density of the exciting light in the excitation illumination part
Rate changing unit,
The flaw detection apparatus has control unit, and the control unit is according to the object lens selected in the shooting multiplying power switching part
Multiplying power is observed, the range of exposures and energy density of the exciting light in the illumination multiplying power changing unit are changed.
2. flaw detection apparatus according to claim 1, which is characterized in that
The projecting lens that the excitation illumination part has multiple projection multiplying powers different,
The irradiation multiplying power changing unit switches over the projecting lens for passing through the exciting light.
3. flaw detection apparatus according to claim 1, which is characterized in that
The excitation illumination part has the multiple lens for passing through the exciting light,
The irradiation multiplying power changing unit changes the distance between the multiple lens.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-141943 | 2016-07-20 | ||
| JP2016141943A JP6688184B2 (en) | 2016-07-20 | 2016-07-20 | Wide gap semiconductor substrate defect inspection system |
| PCT/JP2017/017371 WO2018016154A1 (en) | 2016-07-20 | 2017-05-08 | Defect inspection device for wide-gap semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109478523A true CN109478523A (en) | 2019-03-15 |
| CN109478523B CN109478523B (en) | 2022-12-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780044105.9A Active CN109478523B (en) | 2016-07-20 | 2017-05-08 | Defect inspection device for wide band gap semiconductor substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6688184B2 (en) |
| KR (1) | KR102268931B1 (en) |
| CN (1) | CN109478523B (en) |
| TW (1) | TWI698942B (en) |
| WO (1) | WO2018016154A1 (en) |
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| CN111038114A (en) * | 2019-11-13 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | Ink-jet printing device and method for preparing organic light-emitting diode display panel |
| CN113295616A (en) * | 2021-03-30 | 2021-08-24 | 浙江大学杭州国际科创中心 | Comprehensive test method for SiC wafer and epitaxial layer structure thereof |
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| JP6827433B2 (en) * | 2018-03-02 | 2021-02-10 | 株式会社東芝 | Semiconductor device |
| JP6585799B1 (en) | 2018-10-15 | 2019-10-02 | 昭和電工株式会社 | Method for evaluating SiC substrate and method for producing SiC epitaxial wafer |
| KR102148167B1 (en) * | 2019-08-26 | 2020-08-26 | 주식회사 윈텍오토메이션 | Carbide insert using an orthogonal robot MGT of the high speed inspection equipment and carbide insert top inspection camera milling depth control device for milling |
| JPWO2022049979A1 (en) * | 2020-09-03 | 2022-03-10 | ||
| KR102381348B1 (en) * | 2020-10-29 | 2022-03-30 | 한국전기연구원 | Non-destructive analysis for TSD and TED defect of silicon carbide wafers |
| KR102223433B1 (en) * | 2020-11-24 | 2021-03-05 | 주식회사 트랙스원 | Digital microscope |
| CN117310925B (en) * | 2023-11-28 | 2024-02-23 | 武汉中导光电设备有限公司 | Cone pulley type objective lens switcher and cone pulley type objective lens |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI698942B (en) | 2020-07-11 |
| JP6688184B2 (en) | 2020-04-28 |
| JP2018014377A (en) | 2018-01-25 |
| KR20190031233A (en) | 2019-03-25 |
| KR102268931B1 (en) | 2021-06-23 |
| CN109478523B (en) | 2022-12-16 |
| WO2018016154A1 (en) | 2018-01-25 |
| TW201812943A (en) | 2018-04-01 |
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