CN109473446B - Light-emitting diode micro-device and display panel - Google Patents
Light-emitting diode micro-device and display panel Download PDFInfo
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- CN109473446B CN109473446B CN201811165747.7A CN201811165747A CN109473446B CN 109473446 B CN109473446 B CN 109473446B CN 201811165747 A CN201811165747 A CN 201811165747A CN 109473446 B CN109473446 B CN 109473446B
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- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a light-emitting diode micro-device and a display panel. The light emitting diode micro-device comprises a light emitting chip layer, a first conducting layer, a second conducting layer, a first transparent substrate and a transparent conducting layer. The first conductive layer is arranged on one surface of the light-emitting wafer layer. The second conductive layer is arranged on the other surface of the light-emitting wafer layer. The surface of the first transparent substrate is distributed with a plurality of thin film transistors, and the first conducting layer covers the thin film transistors and is electrically connected with the thin film transistors. The display panel comprises at least one group of light-emitting diode micro-devices, a second transparent substrate and a driving circuit correspondingly connected to each light-emitting diode micro-device. The invention does not need to move in a large amount, saves a large amount of time, improves the production efficiency, improves the product yield, and saves raw materials and production cost.
Description
Technical Field
The invention relates to the field of display, in particular to a light-emitting diode micro device and a display panel.
Background
The technology of Micro-LEDs (Micro Light-Emitting diodes) is a new display device technology that is hot today, and the principle thereof is to design the LED structure into a thin film, a small size and an array, and the size thereof is only about 1-10 meters. The Micro-LED has the advantages of high efficiency, high brightness, high reliability, short reaction time and the like of the LED, has the characteristic of self-luminescence without a backlight source, and has the advantages of energy conservation, small volume, simple mechanism and the like.
In the first step of the existing Micro-LED technology, a light emitting diode array with micron-sized dimensions is manufactured on a sapphire substrate. The second step is to transfer the led array to the driver board, which is also referred to as bulk transfer because of the large number of led particles that need to be transferred. The huge transfer involves a lot of small light-emitting diodes for accurate transfer, and the transfer times are many, so the transfer process needs long time, the transfer efficiency is low, the light-emitting diode particles are easy to be damaged in the transfer process, the damaged light-emitting diode particles need to be maintained and treated independently, the product yield is low, and raw materials are wasted. The problem faced by mass transfer is also a significant problem restricting the development of Micro-LEDs at present.
Disclosure of Invention
The invention aims to provide a light-emitting diode micro-device which comprises a light-emitting chip layer, a first conducting layer, a second conducting layer and a first transparent substrate. A plurality of light emitting diodes are distributed on the light emitting wafer layer and comprise two electrode ends. The first conductive layer is arranged on one surface of the light-emitting wafer layer. The second conductive layer is arranged on the other surface of the light-emitting wafer layer. The surface of the first transparent substrate is distributed with a plurality of thin film transistors, and the first conducting layer covers the thin film transistors and is electrically connected with the thin film transistors. The first conductive layer is connected with one electrode end of the light-emitting diode, and the second conductive layer is connected with the other electrode end of the light-emitting diode.
Furthermore, two electrode ends of the light emitting diode are respectively a P pole and an N pole. The first conducting layer is connected with the P pole, the second conducting layer is connected with the N pole, or the first conducting layer is connected with the N pole, and the second conducting layer is connected with the P pole.
Furthermore, the light emitting diode micro-device also comprises a transparent conducting layer which is arranged on the second conducting layer.
Further, the light emitting wafer layer is one of a red light emitting wafer layer, a green light emitting wafer layer and a blue light emitting wafer layer.
Further, the transparent conducting layer is a patterned indium tin oxide semiconductor transparent conducting film.
The invention also provides a display panel, which comprises at least one group of the light-emitting diode micro-devices, wherein all the light-emitting diode micro-devices in each group are stacked up and down.
Further, each set of the light emitting diode micro-devices comprises a light emitting diode micro-device with a red light emitting wafer layer, a light emitting diode micro-device with a green light emitting wafer layer and a light emitting diode micro-device with a blue light emitting wafer layer.
Furthermore, the light emitting diode micro-device with the green light emitting wafer layer is arranged on the light emitting diode micro-device with the blue light emitting wafer layer. The light emitting diode micro-device with the red light emitting wafer layer is arranged on the light emitting diode micro-device with the green light emitting wafer layer.
Furthermore, the micro-device also comprises a second transparent substrate which is arranged on the light-emitting diode micro-device with the red light-emitting wafer layer.
Furthermore, the LED micro-device also comprises a driving circuit, and each LED micro-device is correspondingly connected to one driving circuit.
According to the light emitting diode micro-device and the display panel provided by the invention, the light emitting wafer layer is indirectly electrically connected with the thin film transistor, and the light emitting wafer layer can be formed by cutting the wafer in which micron-sized light emitting diodes are arrayed on the sapphire substrate, so that the light emitting diodes with the micron size of only a few microns do not need to be moved by a large amount of transfer, a large amount of time is saved, the production efficiency is improved, and the damage rate of the light emitting diodes is greatly reduced due to the fact that the light emitting wafer layer does not need to be moved, the product yield is improved, and raw materials and the.
Drawings
FIG. 1 is a cross-sectional view of a light emitting diode micro-device in example 1 of the present invention;
fig. 2 is a cross-sectional view of a display panel in embodiment 2 of the present invention.
The components in the figures are represented as follows:
a light emitting diode micro device 100;
a first transparent substrate 1; a first conductive layer 2;
a light emitting chip layer 3; a red light emitting chip layer 31; a green light emitting die layer 32; a blue light emitting chip layer 33;
a second conductive layer 4; a transparent conductive layer 5; a thin film transistor 6;
a display panel 200;
a second transparent substrate 7; a drive circuit 8; a connecting wire 9;
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, which are included to demonstrate that the invention can be practiced, and to provide those skilled in the art with a complete description of the invention so that the technical content thereof will be more clear and readily understood. The present invention may be embodied in many different forms of embodiments and the scope of the invention is not limited to the embodiments set forth herein.
In the drawings, structurally identical elements are represented by like reference numerals, and structurally or functionally similar elements are represented by like reference numerals throughout the several views. The size and thickness of each component shown in the drawings are arbitrarily illustrated, and the present invention is not limited to the size and thickness of each component. The thickness of the components may be exaggerated where appropriate in the figures to improve clarity.
The directional terms used in the present invention, such as "upper" and "lower", are only directions in the drawings, and are only used for explaining and explaining the present invention, but not for limiting the scope of the present invention.
When certain components are described as being "on" another component, the components can be directly on the other component; there may also be an intermediate member disposed on the intermediate member and the intermediate member disposed on the other member. When an element is referred to as being "mounted to" or "connected to" another element, they may be directly "mounted to" or "connected to" the other element or indirectly "mounted to" or "connected to" the other element through an intermediate element.
Example 1
As shown in fig. 1, the present embodiment provides a light emitting diode micro device 100, which includes a light emitting chip layer 3, a first conductive layer 2, a second conductive layer 4, a first transparent substrate 1 and a transparent conductive layer 5. The first conductive layer 2 is disposed on one surface of the light-emitting die layer 3, and the second conductive layer 4 is disposed on the other surface of the light-emitting die layer 3. The first conductive layer 2 covers the first transparent substrate 1. The transparent conductive layer 5 is provided on the second conductive layer 4, is electrically connected to the second conductive layer 4, is an indium tin oxide semiconductor transparent conductive film (ITO conductive glass), and is patterned on the connection surface of the transparent conductive layer 5 and the second conductive layer 4 in order to reduce crosstalk between pixels.
The light-emitting wafer layer 3 is formed by cutting a wafer distributed with a plurality of micron-sized light-emitting diodes. The light emitting diode is one of a red light emitting diode, a green light emitting diode and a blue light emitting diode, and has a red light emitting chip layer 31 of the red light emitting diode, a green light emitting chip layer 32 of the green light emitting diode and a blue light emitting chip layer 33 of the blue light emitting diode. Each light emitting diode is provided with two electrode terminals, namely a P electrode and an N electrode, when the first conducting layer 2 is electrically connected with the P electrode, the second conducting layer 4 is electrically connected with the N electrode, the first conducting layer 2 is a P electrode conducting layer at the moment, and the second conducting layer 4 is an N electrode conducting layer. When the first conductive layer 2 is electrically connected to the N pole, the second conductive layer 4 is electrically connected to the P pole, and at this time, the first conductive layer 2 is an N pole conductive layer, and the second conductive layer 4 is a P pole conductive layer. The light emitting chip layer 3 converts the electric energy into light energy through the light emitting diode, thereby emitting light of a corresponding color.
The first transparent substrate 1 is a glass substrate on which a plurality of thin film transistors 6 are disposed and distributed on the surface thereof in an array. The first conductive layer 2 covers the thin film transistors 6 and is electrically connected to the thin film transistors 6, and each thin film transistor 6 can control the light emission of one sub-pixel. The light emitting chip layer 3 is electrically connected with the thin film transistor 6 and the transparent conductive layer 5 through the first conductive layer 2 and the second conductive layer 4, and since the electrodes of the light emitting diode are in a vertical structure, most of the current will flow to the transparent conductive layer 5 through the light emitting chip layer 3 vertically, and the rest will flow to the transparent conductive layer 5 from an angle of 45-135 degrees, the size of the light emitting region, that is, the size of a single pixel region can be controlled by controlling the size of the connection point of the thin film transistor 6 and the first conductive layer 2.
In this embodiment, the light emitting chip layer 3 is formed by cutting the arranged light emitting diode chips, and the single thin film transistor 6 controls the single pixel region by electrically connecting with the thin film transistor 6, so that a large amount of transfer is not required in the whole manufacturing process, a large amount of time is saved, and the production efficiency is improved. And because the LED is not required to be moved, the damage rate of the LED is also greatly reduced, the yield of products is improved, and raw materials and production cost are saved.
Example 2
As shown in fig. 2, the present embodiment provides a display panel 200, which includes a set of led micro-devices 100 as described in embodiment 1, and all the led micro-devices 100 in each set are stacked on top of each other.
Each set of led micro-devices 100 includes a led micro-device 100 having a red light emitting die layer 31, a led micro-device 100 having a green light emitting die layer 32, and a led micro-device 100 having a blue light emitting die layer 33. The led micro-device 100 with the green light emitting die layer 32 is disposed on the led micro-device 100 with the blue light emitting die layer 33. The led micro-device 100 with the red light emitting die layer 31 is disposed on the led micro-device 100 with the green light emitting die layer 32.
The display panel 200 provided in this embodiment further includes a second transparent substrate 7 and three driving circuits 8. The second transparent substrate 7 is a glass substrate, which is disposed on the led micro-device 100 having the red light-emitting chip layer 31, and is used for transmitting light while protecting the overall structure of the display panel 200 and preventing short circuit with other circuits. The three driving circuits 8 are respectively connected with each thin film transistor 6 of the corresponding light emitting diode micro-device 100 through the connecting lines 9, and each driving circuit 8 can independently control the corresponding thin film transistor 6 of the light emitting diode, so that each sub-pixel can independently emit light.
In the present embodiment, the led micro-devices 100 in each group are stacked up and down, and each led micro-device 100 is controlled by the independent driving circuit 8, so that each sub-pixel can emit light independently, and such an arrangement can achieve a finer display effect.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A light emitting diode micro-device, comprising:
the LED chip comprises a light emitting chip layer, a plurality of LEDs and a plurality of metal layers, wherein the LEDs comprise two electrode ends;
a first conductive layer disposed on a surface of the light-emitting chip layer;
a second conductive layer disposed on the other surface of the light-emitting chip layer;
the surface of the first transparent substrate is distributed with a plurality of thin film transistors, and the first conducting layer covers the thin film transistors and is electrically connected with the thin film transistors;
the transparent conducting layer is arranged on the second conducting layer;
the first conductive layer is connected with one electrode end of the light-emitting diode, and the second conductive layer is connected with the other electrode end of the light-emitting diode.
2. The light emitting diode micro-device of claim 1,
two electrode ends of the light-emitting diode are respectively a P pole and an N pole;
the first conducting layer is connected with the P pole, and the second conducting layer is connected with the N pole; or
The first conducting layer is connected with the N pole, and the second conducting layer is connected with the P pole.
3. The led micro-device of claim 1, wherein the light emitting die layer is one of a red light emitting die layer, a green light emitting die layer, and a blue light emitting die layer.
4. The light-emitting diode micro-device of claim 1, wherein the transparent conductive layer is a patterned indium tin oxide semiconductor transparent conductive film.
5. A display panel comprising at least one set of light emitting diode micro devices as claimed in any one of claims 1 to 4, all of the light emitting diode micro devices in each set being stacked one on top of the other.
6. The display panel of claim 5 wherein each set of the light emitting diode micro-devices includes a light emitting diode micro-device having a red light emitting die layer and a light emitting diode micro-device having a green light emitting die layer and a light emitting diode micro-device having a blue light emitting die layer.
7. The display panel of claim 6,
the light-emitting diode micro-device with the green light-emitting wafer layer is arranged on the light-emitting diode micro-device with the blue light-emitting wafer layer;
the light emitting diode micro-device with the red light emitting wafer layer is arranged on the light emitting diode micro-device with the green light emitting wafer layer.
8. The display panel of claim 7, further comprising a second transparent substrate disposed on the LED micro-device with the red light-emitting die layer.
9. The display panel of claim 5, further comprising a driving circuit, wherein each of the LED micro-devices is correspondingly connected to a driving circuit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811165747.7A CN109473446B (en) | 2018-10-08 | 2018-10-08 | Light-emitting diode micro-device and display panel |
| PCT/CN2018/115797 WO2020073425A1 (en) | 2018-10-08 | 2018-11-16 | Light-emitting diode micro-device and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811165747.7A CN109473446B (en) | 2018-10-08 | 2018-10-08 | Light-emitting diode micro-device and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109473446A CN109473446A (en) | 2019-03-15 |
| CN109473446B true CN109473446B (en) | 2021-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811165747.7A Active CN109473446B (en) | 2018-10-08 | 2018-10-08 | Light-emitting diode micro-device and display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109473446B (en) |
| WO (1) | WO2020073425A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171847A (en) * | 2008-10-03 | 2011-08-31 | 港大科桥有限公司 | Semiconductor color-tunable broadband light sources and full-color microdisplays |
| CN107331670A (en) * | 2017-07-10 | 2017-11-07 | 深圳市华星光电技术有限公司 | Display panel and preparation method thereof, display device |
| CN108597377A (en) * | 2018-02-06 | 2018-09-28 | 友达光电股份有限公司 | Display module and display device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9087764B2 (en) * | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
| WO2017146476A1 (en) * | 2016-02-26 | 2017-08-31 | 서울반도체주식회사 | Display apparatus and method for producing same |
| CN106816502B (en) * | 2017-04-12 | 2019-04-02 | 京东方科技集团股份有限公司 | A kind of LED chip, LED light-emitting substrate, display device and color display control method |
| CN107482032A (en) * | 2017-08-10 | 2017-12-15 | 佛山市国星半导体技术有限公司 | A kind of MicroLED chips for full-color display and preparation method thereof |
| CN107680960B (en) * | 2017-09-26 | 2019-07-16 | 上海天马微电子有限公司 | A kind of display panel and its manufacturing method, display device |
| CN109037270B (en) * | 2018-07-26 | 2021-05-04 | 武汉天马微电子有限公司 | Display panel and display device |
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2018
- 2018-10-08 CN CN201811165747.7A patent/CN109473446B/en active Active
- 2018-11-16 WO PCT/CN2018/115797 patent/WO2020073425A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171847A (en) * | 2008-10-03 | 2011-08-31 | 港大科桥有限公司 | Semiconductor color-tunable broadband light sources and full-color microdisplays |
| CN107331670A (en) * | 2017-07-10 | 2017-11-07 | 深圳市华星光电技术有限公司 | Display panel and preparation method thereof, display device |
| CN108597377A (en) * | 2018-02-06 | 2018-09-28 | 友达光电股份有限公司 | Display module and display device |
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| Publication number | Publication date |
|---|---|
| WO2020073425A1 (en) | 2020-04-16 |
| CN109473446A (en) | 2019-03-15 |
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