CN109473334A - A kind of novel ion source - Google Patents
A kind of novel ion source Download PDFInfo
- Publication number
- CN109473334A CN109473334A CN201811623526.XA CN201811623526A CN109473334A CN 109473334 A CN109473334 A CN 109473334A CN 201811623526 A CN201811623526 A CN 201811623526A CN 109473334 A CN109473334 A CN 109473334A
- Authority
- CN
- China
- Prior art keywords
- flange
- discharge column
- ring
- hollow pipe
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 18
- 241000233855 Orchidaceae Species 0.000 claims abstract description 13
- 238000007789 sealing Methods 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010884 ion-beam technique Methods 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical group [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention discloses a kind of novel ion sources, including bottom flange, shell process orchid, cathode flange, insulating sleeve, discharge column, inlet duct, ion generating device；The surrounding set casing flange of bottom flange；In the top fixed negative pole flange of shell process orchid；At the top of cathode flange, several discharge column mounting holes are set；Discharge column is set in discharge column mounting hole；The center location of bottom flange is arranged in inlet duct；Inlet duct passes through bottom flange；It penetrates in ion generating device and fixed；Insulating sleeve is arranged between inlet duct and ion generating device to be isolated；Change of the present invention in structure is utilized, cathode is become into uniformly distributed several points from single components, so that the ion of transmitting becomes entire surface from previous runway form, not only density is big for such ion beam current, and uniformity is good, and directionality is also strong.Simultaneously because the effect of axial magnetic field, ion energy are also higher.
Description
Technical field
The present invention relates to field of vacuum coating more particularly to a kind of novel ion sources.
Background technique
Existing ion source is based on Kaufman ion source and hall ion source.Kaufman ion source be using earlier from
Component belongs to grid type ion source.Plasma is generated in ion source inner cavity by cathode first, by two layers or three layers of anode after allowing
Grid extracts ion from plasma chamber.The ion high directivity that this ion source generates, ion energy bandwidth collection
In, it can be widely applied in vacuum coating.The disadvantage is that cathode (often tungsten wire) is burnt up soon in reaction gas, in addition
It is exactly that ion-flow rate has the limit, the user of the big ion-flow rate of needs may not be accommodated.Hall ion source is that anode is strong at one
By process gas plasma under the cooperation of axial magnetic field, gas ion is separated simultaneously shape by the strong disequilibrium of this axial magnetic field
At ion beam.Since the effect of axial magnetic field is too strong, hall ion source ion beam requires supplementation with electronics to neutralize ion stream.It is common
Neutralization source be exactly tungsten wire (cathode), tungsten wire is generally across exporting, and receiving ion beam impact can corrode quickly, especially to reaction gas
Body just needs to change for general more than ten hour.And tungsten wire also has certain pollution.Hall ion source can be described as most widely used
General ion source, domestic most of ion source is all this type.
Summary of the invention
In place of according to above-mentioned the deficiencies in the prior art, the object of the invention realizes a kind of novel ion
Source, which is characterized in that filled including bottom flange, shell process orchid, cathode flange, insulating sleeve, discharge column, inlet duct, ion
It sets；The fixed shell process of the surrounding of the bottom flange is blue；In the top fixed negative pole flange of the shell process orchid；Described
The top of cathode flange several discharge column mounting holes are set；Discharge column is set in discharge column mounting hole；The air inlet
The center location of bottom flange is arranged in device；The inlet duct passes through bottom flange；It penetrates in the ion generating device
And it is fixed；Insulating sleeve is arranged between the inlet duct and ion generating device to be isolated.
Further, the ion generating device further includes insulation lantern ring, dead ring, permanent magnet, anode flange, method
It is blue；The one insulation lantern ring of setting in the inside of the shell process orchid；Anode flange is pushed down below insulation lantern ring；In anode flange
Dead ring is set between lower section, with flange；And it will be fixed in anode flange, dead ring and a flange bolt；On flange
Be screwed the discharge column；Equally it is arranged and the one-to-one circular hole of discharge column mounting hole on anode flange；
Gap is set between circular hole and the discharge column；In the lower section of flange, permanent magnet is inserted on the insulating sleeve.
Further, the inlet duct further include hollow pipe, sealing flange, the first fluorine rubber ring, the second fluorine rubber ring,
Clamp flange, conducting ring, gas-tpe fitting；Hollow pipe is arranged among the insulating sleeve；Between one end of hollow pipe resists
Flange；Sealing flange is inserted in the other end of hollow pipe；Second fluorine rubber ring is set between hollow pipe and sealing flange；Close
The outside for sealing flange, is inserted in the first fluorine rubber ring between the flange of bottom；Clamp flange is inserted in the lower end of sealing flange；And it will be tight
Gu flange is fixed with bottom flange；In the lower end of clamp flange, conducting ring is inserted on hollow pipe；Be screwed gas on hollow pipe
Pipe fitting.
Further；The material of insulate lantern ring, dead ring and the insulating sleeve is ceramics；The permanent magnet is neodymium iron
Boron magnets；
Further, the material of the hollow pipe and clamp flange is 304 stainless steels.
Further, the sealing flange is polytetrafluoroethylene (PTFE).
Further, discharge column array arrangement annular in shape.
Further, two through-holes are arranged in a mutually vertical manner on one end of the hollow pipe.
The technical effects of the invention are that change of the present invention in structure is utilized, cathode is become from single components
At uniformly distributed several points, so that the ion of transmitting becomes entire surface from previous runway form, such ion beam current is not only close
Degree is big, and uniformity is good, and directionality is also strong.Simultaneously because the effect of axial magnetic field, ion energy are also higher.Without filament, grid and
Neutralization source, can long-time steady operation and production.With very high mean free error time and extremely low maintenance cost.
Detailed description of the invention
Fig. 1 is positive stereoscopic schematic diagram of the invention.
Fig. 2 is direction solid left view of the invention.
Fig. 3 is full sectional view of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
In conjunction with shown in attached drawing 1, attached drawing 2, attached drawing 3, a kind of novel ion source, including bottom flange 6, shell are present embodiments provided
Flange 4, cathode flange 1, insulating sleeve 11, discharge column 7, inlet duct 20, ion generating device 30；The surrounding of bottom flange 6 is solid
Determine shell process orchid 4；In the top fixed negative pole flange 1 of shell process orchid 4；At the top of cathode flange 1, the installation of several discharge columns is set
Hole 18；Discharge column 7 is set in discharge column mounting hole 18；The center location of bottom flange 6 is arranged in inlet duct 20；Inlet duct
20 pass through bottom flange 6；It penetrates in ion generating device 30 and fixed；It is arranged between inlet duct 20 and ion generating device 30 exhausted
Edge casing 11 is isolated；By being arranged inlet duct 20 in ion generating device 30.Cathode becomes uniformly distributed from single components
Several points so that transmitting ion become entire surface from previous runway form, not only density is big for such ion beam current,
Even property is good, and directionality is also strong.Simultaneously because the effect of axial magnetic field, ion energy are also higher.No filament, grid and neutralization source,
It can long-time steady operation and production.With very high mean free error time and extremely low maintenance cost.
In order to realize above-mentioned technical characterstic, as shown in Fig. 3, ion generating device 30 further includes insulation lantern ring 2, insulation
Ring 3, permanent magnet 5, anode flange 8, flange 9；The one insulation lantern ring 2 of setting in the inside of shell process orchid 4；The lower section of insulation lantern ring 2
Push down anode flange 8；Dead ring 3 is set between the lower section of anode flange 8, with flange 9；And it will be in anode flange 8, insulation
Ring 2 and 9 bolt of flange are fixed；Cathode and anode edge lantern ring 2, dead ring 3 is isolated, so that generating ionization
Become possibility, additionally by the discharge column 7 that is screwed on flange 9；Equally setting is pacified with discharge column on anode flange 8
Fill the one-to-one circular hole 19 in hole 18；Gap is set between circular hole 19 and discharge column 7；Gap is used for the generation of ionization space, from
Son has the space generated in gap, meanwhile, the gap is smaller, it is easier to form the higher ion of quality；Meanwhile in a method
The lower section of orchid 8, is inserted in permanent magnet 5 on insulating sleeve 11；For attracting the guiding role of ion.
Meanwhile had also been devised in the inlet duct 20 hollow pipe 10, sealing flange 12, the first fluorine rubber ring 13,
Second fluorine rubber ring 14, clamp flange 15, conducting ring 16, gas-tpe fitting 17；Hollow pipe 10 is arranged among insulating sleeve 11；?
One end of hollow pipe 10 resists a flange 8；Sealing flange 12 is inserted in the other end of hollow pipe 10；In hollow pipe 10 and Sealing Method
Second fluorine rubber ring 14 is set between orchid 12；The first fluorine rubber ring is inserted between the outside of sealing flange 12, with bottom flange 6
13；Clamp flange 15 is inserted in the lower end of sealing flange 12；And it is clamp flange 15 and bottom flange 6 is fixed；In clamp flange 15
Lower end, conducting ring 16 is inserted on hollow pipe 10；Be screwed gas-tpe fitting 17 on hollow pipe 10.In this way, passing through conduction
Apply positive voltage on ring 16, positive voltage is transmitted on anode flange 8 by hollow pipe 10, due to the lantern ring 2, dead ring 3 of insulating
Material with insulating sleeve 11 is ceramics；Insulating sleeve 11 has completely cut off and cathode flange 1；Meanwhile insulate lantern ring 2, dead ring 3 will
Cathode flange 1 and anode flange 8 completely cut off, meanwhile, there is gap between discharge column 7 and anode flange 8, meanwhile, also it has been isolated positive and negative
Voltage difference.In the present invention, sealing flange 12 is polytetrafluoroethylene (PTFE)；It is equally insulating materials, by the positive voltage on hollow pipe 10
It is same as bottom flange 6, completely cut off, so that hollow pipe 10, conducting ring 16, gas-tpe fitting 17 and the positively charged pressure of anode flange 8
In addition, the negatively charged pressure of remaining part；Cathode and anode is isolated, meanwhile, so that the volume of device is greatly
Reduce.
Permanent magnet 5 is ndfeb magnet in the present invention；The material of hollow pipe 10 and clamp flange 15 is 304 stainless steels.
Sealing flange 12 is polytetrafluoroethylene (PTFE).
Meanwhile in order to increase the arrangement of the array annular in shape of effect discharge column 7 of ionization.It is mutually perpendicular on one end of hollow pipe 10
Two through-holes are set.
As the preferred embodiment of the invention, it is obvious to a person skilled in the art that showing the present invention is not limited to above-mentioned
The details of exemplary embodiment, and without departing from the spirit or essential characteristics of the present invention, it can be with other specific
Form realizes the present invention and protection scope of the present invention.Therefore, in all respects, the embodiments should be taken as
It is exemplary, and be non-limiting, the scope of the invention being indicated by the appended claims rather than by the foregoing description, therefore purport
It is including all changes that fall within the meaning and scope of the equivalent elements of the claims in the present invention.Right should not be wanted
Any appended drawing reference in asking is construed as limiting the claims involved.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (8)
1. a kind of novel ion source, which is characterized in that including bottom flange, shell process orchid, cathode flange, insulating sleeve, discharge column, into
Device of air, ion generating device；The fixed shell process of the surrounding of the bottom flange is blue；It is solid at the top of the shell process orchid
Determine cathode flange；At the top of the cathode flange, several discharge column mounting holes are set；It is arranged in discharge column mounting hole
Discharge column；The center location of bottom flange is arranged in the inlet duct；The inlet duct passes through bottom flange；It penetrates described
Ion generating device in and it is fixed；Insulating sleeve is arranged between the inlet duct and ion generating device to be isolated.
2. a kind of novel ion source as described in claim 1, which is characterized in that the ion generating device further includes insulation
Lantern ring, dead ring, permanent magnet, anode flange, flange；The one insulation lantern ring of setting in the inside of the shell process orchid；Insulation sleeve
Anode flange is pushed down below ring；Dead ring is set between the lower section of anode flange, with flange；And will anode flange,
Dead ring and a flange bolt are fixed；Be screwed the discharge column on flange；On anode flange equally setting with
The one-to-one circular hole of discharge column mounting hole；Gap is set between circular hole and the discharge column；Under flange
Side, is inserted in permanent magnet on the insulating sleeve.
3. a kind of novel ion source as described in claim 1, which is characterized in that the inlet duct further include hollow pipe,
Sealing flange, the first fluorine rubber ring, the second fluorine rubber ring, clamp flange, conducting ring, gas-tpe fitting；Hollow pipe is arranged described
Insulating sleeve among；A flange is resisted in one end of hollow pipe；Sealing flange is inserted in the other end of hollow pipe；In hollow pipe
Second fluorine rubber ring is set between sealing flange；The first fluorine rubber ring is inserted between the outside of sealing flange, with bottom flange；
Clamp flange is inserted in the lower end of sealing flange；And clamp flange and bottom flange are fixed；In the lower end of clamp flange, hollow
Conducting ring is inserted on pipe；Be screwed gas-tpe fitting on hollow pipe.
4. a kind of novel ion source as claimed in claim 2, it is characterised in that；Insulation lantern ring, dead ring and the insulation
The material of casing is ceramics；The permanent magnet is ndfeb magnet.
5. a kind of novel ion source as claimed in claim 3, which is characterized in that the material of the hollow pipe and clamp flange
For 304 stainless steels.
6. a kind of novel ion source as claimed in claim 3, which is characterized in that the sealing flange is polytetrafluoroethylene (PTFE).
7. a kind of novel ion source as described in claim 1, which is characterized in that discharge column array arrangement annular in shape.
8. a kind of novel ion source as claimed in claim 3, which is characterized in that be mutually perpendicular on one end of the hollow pipe
Two through-holes are set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811623526.XA CN109473334B (en) | 2018-12-28 | Ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811623526.XA CN109473334B (en) | 2018-12-28 | Ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109473334A true CN109473334A (en) | 2019-03-15 |
| CN109473334B CN109473334B (en) | 2024-07-26 |
Family
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111179707A (en) * | 2020-02-27 | 2020-05-19 | 大连理工大学 | Direct current glow discharge probe diagnostic device for teaching |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0413291A2 (en) * | 1989-08-14 | 1991-02-20 | Hauzer Holding B.V. | Method and device for sputtering of films |
| JP2010153095A (en) * | 2008-12-24 | 2010-07-08 | Showa Shinku:Kk | Ion gun |
| CN105405732A (en) * | 2015-11-10 | 2016-03-16 | 中国电子科技集团公司第四十八研究所 | Linear ion source used for ion beam etching machine |
| CN105762053A (en) * | 2016-04-20 | 2016-07-13 | 沈阳伊贝姆科技有限公司 | Plasma source of electrons and ions |
| CN205542698U (en) * | 2015-12-30 | 2016-08-31 | 核工业西南物理研究院 | Clamping nut filament support's shielding structure in ion source arc chamber |
| CN106683970A (en) * | 2016-11-28 | 2017-05-17 | 中国电子科技集团公司第四十八研究所 | Sparking-prevention direct current ion source |
| CN209357691U (en) * | 2018-12-28 | 2019-09-06 | 上海福宜真空设备有限公司 | A kind of novel ion source |
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0413291A2 (en) * | 1989-08-14 | 1991-02-20 | Hauzer Holding B.V. | Method and device for sputtering of films |
| JP2010153095A (en) * | 2008-12-24 | 2010-07-08 | Showa Shinku:Kk | Ion gun |
| CN105405732A (en) * | 2015-11-10 | 2016-03-16 | 中国电子科技集团公司第四十八研究所 | Linear ion source used for ion beam etching machine |
| CN205542698U (en) * | 2015-12-30 | 2016-08-31 | 核工业西南物理研究院 | Clamping nut filament support's shielding structure in ion source arc chamber |
| CN105762053A (en) * | 2016-04-20 | 2016-07-13 | 沈阳伊贝姆科技有限公司 | Plasma source of electrons and ions |
| CN106683970A (en) * | 2016-11-28 | 2017-05-17 | 中国电子科技集团公司第四十八研究所 | Sparking-prevention direct current ion source |
| CN209357691U (en) * | 2018-12-28 | 2019-09-06 | 上海福宜真空设备有限公司 | A kind of novel ion source |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111179707A (en) * | 2020-02-27 | 2020-05-19 | 大连理工大学 | Direct current glow discharge probe diagnostic device for teaching |
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