CN109470188B - High-temperature ultrasonic wall thickness monitor - Google Patents
High-temperature ultrasonic wall thickness monitor Download PDFInfo
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- CN109470188B CN109470188B CN201811431041.0A CN201811431041A CN109470188B CN 109470188 B CN109470188 B CN 109470188B CN 201811431041 A CN201811431041 A CN 201811431041A CN 109470188 B CN109470188 B CN 109470188B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
- G01B17/02—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness
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Abstract
The invention relates to a high-temperature ultrasonic wall thickness monitor, which comprises dataThe system comprises an acquisition end and a remote monitoring end; the data acquisition end comprises a high-temperature ultrasonic probe, a probe line and a data acquisition and processing module, wherein the data acquisition and processing module is used for periodically providing pulse signals to the high-temperature ultrasonic probe according to the setting of a timer under the action of the controller and acquiring wall thickness data based on the time difference between the transmitted ultrasonic signals and the reflected echo signals; under the action of the controller, the wireless communication module wirelessly transmits the wall thickness data to the remote monitoring end; meanwhile, the high-temperature ultrasonic probe is made of a high-temperature BSPT piezoelectric ceramic wafer by arranging ZrO2The protective film made of thermal barrier coating is insulated to lower the actual working temperature of the probe. Therefore, the monitor can monitor the wall thickness at high temperature for a long time, remotely and in real time, solves the problem of short service life of the conventional ultrasonic probe under the high-temperature working condition, and ensures the accuracy of thickness measurement.
Description
Technical Field
The invention relates to the technical field of corrosion monitoring of pressure-bearing equipment in the field of petrochemical industry, in particular to a high-temperature ultrasonic wall thickness monitor.
Background
In the field of petrochemical industry, accidents caused by failure of high-temperature pressure-bearing equipment (such as pressure vessels and pressure pipelines) occur sometimes, the failure modes of the high-temperature pressure-bearing equipment mainly comprise corrosion, material defects, fatigue failure and the like, and the corrosion is one of important factors influencing the production safety of the high-temperature pressure-bearing equipment.
Aiming at the problem of local corrosion failure of high-temperature pressure-bearing equipment, the main preventive measure at present is to use an ultrasonic thickness gauge to regularly perform fixed-point thickness measurement on a pipeline, although the mode reduces the occurrence of accidents to a certain extent, the regular thickness measurement in a period of year under the condition of high-pressure working condition cannot fundamentally overcome the paroxysmal and accidental corrosion reduction of the wall thickness of the high-temperature pressure-bearing equipment.
Therefore, a technical means for monitoring high temperature in real time is needed to solve the above problems.
Disclosure of Invention
The invention aims to solve the defects that the conventional periodic thickness measurement technology has long measurement period and cannot overcome the sudden and accidental defects of wall thickness corrosion thinning, and provides a high-temperature ultrasonic wall thickness monitor.
In order to achieve the purpose, the invention adopts the following technical scheme:
a high temperature ultrasonic wall thickness monitor, comprising: a data acquisition end and a remote monitoring end,
the data acquisition end comprises a high-temperature ultrasonic probe, a probe line and a data integration processing module; the high-temperature ultrasonic probe is used for being attached to a high-temperature object to be detected; the data integration processing module is connected with the high-temperature ultrasonic probe through the probe line;
and, the data integration processing module includes: the device comprises a data acquisition and processing module, a controller, a timer, a battery and a wireless communication module; it is characterized in that the preparation method is characterized in that,
the data acquisition and processing module is used for providing pulse signals to the high-temperature ultrasonic probe according to the time interval set by the timer under the action of the controller; the high-temperature ultrasonic probe transmits an ultrasonic signal according to the pulse signal and collects a reflected echo signal obtained by reflecting the bottom surface of the high-temperature object to be detected; the data acquisition and processing module acquires wall thickness data based on the time difference between the transmitted ultrasonic signal and the reflected echo signal;
the wireless communication module is used for wirelessly transmitting the wall thickness data obtained by the data acquisition and processing module to a remote monitoring end under the action of the controller;
the high-temperature ultrasonic probe is made of a high-temperature BSPT piezoelectric ceramic wafer, and ZrO is arranged in front of the high-temperature BSPT piezoelectric ceramic wafer2The protective film made of the thermal barrier coating reduces the actual working temperature of the high-temperature ultrasonic probe by insulating heat.
Furthermore, the high-temperature ultrasonic probe and the high-temperature object to be detected are bonded and fixed through a high-temperature adhesive coupling agent, and the high-temperature adhesive coupling agent plays a role in heat insulation.
Furthermore, a damping block is arranged on the back surface of the high-temperature BSPT piezoelectric ceramic wafer in the high-temperature ultrasonic probe, and the damping block is prepared by mixing epoxy resin, tungsten powder and a curing agent according to the weight ratio of about 2: 1: 0.1 is poured.
Furthermore, the wireless communication module adopts a low-frequency ZigBee wireless transmission mode to wirelessly transmit data, the remote monitoring end receives the wireless transmission data of the data acquisition end at one or more monitoring points on the high-temperature object to be detected, and the wall thickness change of the corresponding one or more monitoring points is monitored simultaneously through the received wall thickness data of the one or more data acquisition ends.
Furthermore, the high-temperature ultrasonic wall thickness monitor also comprises a placing plate and a solar charging plate, wherein,
the placing plate is used for placing the data integrated processing module thereon; the solar panel is used for supplying power to the data acquisition and processing module, the controller, the timer, the battery and the wireless communication module which are contained in the data integration processing module;
the arrangement plate is provided with a temperature sensor, and the high-temperature ultrasonic wall thickness monitor further comprises an arrangement plate driving mechanism;
the mounting plate driving mechanism comprises a motor part and is used for moving the mounting plate towards the direction close to or away from the high-temperature object to be detected according to the temperature of the temperature sensor under the control of the controller so as to provide a working environment with a certain temperature range for the data acquisition and processing module, the controller, the timer, the battery and the wireless communication module on the mounting plate.
Compared with the prior art, the invention has the beneficial effects that:
1. by adopting a high-temperature piezoelectric ceramic wafer BSPT and arranging ZrO in a high-temperature ultrasonic probe2The thermal barrier coating adopts the high-temperature glue couplant to replace the conventional couplant, so that the probe can generate and receive ultrasonic signals in a high-temperature state, the influence of high temperature on the measurement precision is avoided, and the precision of wall thickness measurement can be ensured even under the high-temperature condition.
2. The time interval of the timer takes hours or days as a period, the received signals are processed through the data integration processing module and transmitted to the remote monitoring end, and the remote monitoring end can be wirelessly connected with the data integration processing modules and transmits data at the same time, so that the remote monitoring end can comprehensively and statistically analyze the wall thickness data according to the hours or days as the period and according to the spatial positions of a plurality of monitoring points, and further the paroxysmal and contingency of corrosion thinning can be fundamentally overcome.
3. Due to the fact that working conditions of industrial pipelines and pressure containers in the field/factory are complex and changeable, high temperature in summer is superposed with high temperature of high-temperature objects to be measured, ice, snow, rain and the like in winter can affect the work of various electrical modules such as batteries, related circuits and wireless communication modules of the data integrated processing module, and particularly affect high and low temperature environments. The invention adjusts the position of the modules through the setting plate and the driving mechanism thereof, so that the radiation field of the high-temperature object to be measured provides a proper working temperature environment (for example, 0-50 ℃, preferably 10-40 ℃) for the modules.
Drawings
FIG. 1 is a block diagram of the general structure of a high-temperature ultrasonic wall thickness monitor according to the present invention;
FIG. 2 is a schematic structural diagram of a mounting plate of the high-temperature ultrasonic wall thickness monitor according to the present invention;
FIG. 3 is a schematic structural diagram of a high-temperature ultrasonic probe of the high-temperature ultrasonic wall thickness monitor according to the present invention;
the labels in the figure are:
1-a data acquisition end, wherein,
2-a high-temperature ultrasonic probe, wherein,
3-a data integration processing module, wherein,
4-the high-temperature object to be measured,
5-a data acquisition and processing module,
6-the controller is used for controlling the operation of the device,
7-a timer is set in the device,
8-the battery is arranged in the middle of the solar cell,
9-a wireless communication module for the wireless communication,
10-a remote monitoring terminal, wherein the remote monitoring terminal,
11-a high-temperature BSPT piezoelectric ceramic wafer,
12-ZrO2a protective film of a thermal barrier coating,
13-a high-temperature glue coupling agent,
14-a placing plate is arranged on the upper portion of the frame,
15-a solar energy charging panel, wherein,
16-a temperature sensor-the temperature of the sample,
17-placing a plate driving mechanism;
18-damping block.
Detailed Description
The technical solution of the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.
A high temperature ultrasonic wall thickness monitor, comprising: the system comprises a data acquisition terminal 1 and a remote monitoring terminal 10; the data acquisition end 1 comprises a high-temperature ultrasonic probe 2, a probe line and a data integration processing module 3; the high-temperature ultrasonic probe 2 is used for being attached to a high-temperature object 4 to be detected; the data integration processing module 3 is connected with the high-temperature ultrasonic probe 2 through the probe line;
the data integration processing module 3 comprises: the system comprises a data acquisition and processing module 5, a controller 6, a timer 7, a battery 8 and a wireless communication module 9; wherein the content of the first and second substances,
the data acquisition and processing module 5 is configured to provide a pulse signal to the high-temperature ultrasonic probe 2 by the data acquisition and processing module 5 according to a time interval set by the timer 7 under the action of the controller 6; by setting the time interval of the timer 7, the wall thickness data is acquired according to the measurement period of hours or days, and the time interval is 6 hours, 12 hours, 24 hours and the like; the high-temperature ultrasonic probe 2 transmits an ultrasonic signal according to the pulse signal and collects a reflected echo signal obtained by reflecting the bottom surface of the high-temperature object 4 to be detected; the data acquisition and processing module 5 acquires wall thickness data based on the time difference between the transmitted ultrasonic signal and the reflected echo signal;
the wireless communication module 9 is configured to wirelessly transmit the wall thickness data obtained by the data acquisition and processing module 3 to a remote monitoring terminal 10 under the action of the controller 6.
The high-temperature ultrasonic probe 2 is made of a high-temperature BSPT piezoelectric ceramic wafer 11, and a ZrO layer is arranged in front of the high-temperature BSPT piezoelectric ceramic wafer 112The protective film 12 made of the thermal barrier coating reduces the actual working temperature of the high-temperature ultrasonic probe 2 through the heat insulation effect of the thermal barrier coating. BSPT piezoelectric ceramic material BiScO3-PbTiO3A piezoelectric ceramic of the system.
The high-temperature ultrasonic probe 2 and the high-temperature object 4 to be detected are bonded and fixed through the high-temperature adhesive coupling agent 13, and the high-temperature adhesive coupling agent 13 plays a role in heat insulation while being coupled and fixed.
In the high-temperature ultrasonic probe 2, a damping block 18 is arranged on the back surface of the high-temperature BSPT piezoelectric ceramic wafer 11, and the damping block 18 is prepared by mixing epoxy resin, tungsten powder and a curing agent according to the weight ratio of about 2: 1: 0.1 is poured.
The wireless communication module 9 adopts a low-frequency ZigBee wireless transmission mode to wirelessly transmit data, the remote monitoring terminal 10 receives the wireless transmission data of the data acquisition terminal 1 at one or more monitoring points on the high-temperature object 4 to be detected, and the wall thickness change of the corresponding one or more monitoring points is monitored simultaneously through the received wall thickness data of the one or more data acquisition terminals 1. The wall thickness data is collected according to the time interval of hours/days, and one or more monitoring points can be arranged at the monitoring part as required, so that the remote monitoring end can perform statistical analysis on the wall thickness data according to time and space, and the change of the wall thickness can be accurately captured; because the data acquisition is more timely and the spatial position relation of a plurality of monitoring points and the comparison of wall thickness data thereof are combined, compared with the conventional fixed-point ultrasonic thickness measurement taking the year as the period, the method can overcome the paroxysmal and accidental corrosion thinning.
As is known to all, the normal operation of an electronic circuit is influenced by a long-term high-temperature environment, the temperature of a high-temperature object to be detected is usually in the temperature range of 100-400 ℃, and the working effect of the common electronic circuit is guaranteed only when the normal operating temperature is below 80 ℃, even 0-50 ℃ or 10-40 ℃, so that the condition that the conventional monitoring equipment is not suitable for high-temperature long-term monitoring is limited, and the invention further provides that the high-temperature ultrasonic wall thickness monitor also comprises a placing plate 14 and a solar charging plate 15.
Wherein, the placing plate 14 is used for placing the data integration processing module 3 thereon; the solar panel 15 is used for supplying power to the data acquisition and processing module 5, the controller 6, the timer 7, the battery 8 and the wireless communication module 9 which are contained in the data integration processing module 3; moreover, the placing plate is provided with a temperature sensor 16, and the high-temperature ultrasonic wall thickness monitor further comprises a placing plate driving mechanism 17;
the mounting plate driving mechanism 17 comprises a motor component and is used for moving the mounting plate 14 towards a direction close to or far away from the high-temperature object 4 to be detected according to the temperature of the temperature sensor 16 under the control of the controller 7 so as to provide a working environment with a certain temperature range for the data acquisition and processing module 5, the controller 6, the timer 7, the battery 8 and the wireless communication module 9 on the mounting plate 14.
In a temperature field formed by the high-temperature object to be measured, the temperature rapidly drops along with the distance from the high-temperature object to be measured, the arrangement plate and the driving mechanism thereof are arranged by utilizing the rule, so that the components of the data integration processing module 3, such as a battery and the like, are in a proper normal working temperature range no matter what weather conditions, and the precision, the working stability and the long-term property of data acquisition are ensured.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (4)
1. A high temperature ultrasonic wall thickness monitor, comprising: a data acquisition end (1) and a remote monitoring end (10),
the data acquisition end (1) comprises a high-temperature ultrasonic probe (2), a probe line and a data integration processing module (3); the high-temperature ultrasonic probe (2) is used for being attached to a high-temperature object (4) to be detected; the data integration processing module (3) is connected with the high-temperature ultrasonic probe (2) through the probe line;
and, the data integration processing module (3) comprises: the device comprises a data acquisition and processing module (5), a controller (6), a timer (7), a battery (8) and a wireless communication module (9); it is characterized in that the preparation method is characterized in that,
the data acquisition and processing module (5) is used for providing a pulse signal to the high-temperature ultrasonic probe (2) by the data acquisition and processing module (5) according to a time interval set by the timer (7) under the action of the controller (6); the high-temperature ultrasonic probe (2) transmits an ultrasonic signal according to the pulse signal and collects a reflected echo signal obtained by reflecting the bottom surface of the high-temperature object (4) to be detected; the data acquisition and processing module (5) acquires wall thickness data based on the time difference between the transmitted ultrasonic signal and the reflected echo signal;
the wireless communication module (9) is used for wirelessly transmitting the wall thickness data obtained by the data acquisition and processing module (3) to a remote monitoring end (10) under the action of the controller (6);
the high-temperature ultrasonic probe (2) is made of a high-temperature BSPT piezoelectric ceramic wafer (11), and a ZrO layer is arranged in front of the high-temperature BSPT piezoelectric ceramic wafer (11)2A protective film (12) made of thermal barrier coating for reducing the actual working temperature of the high-temperature ultrasonic probe (2) by heat insulation;
the high-temperature ultrasonic wall thickness monitor also comprises a placing plate (14) and a solar charging plate (15), wherein,
the mounting plate (14) is used for mounting the data integration processing module (3) thereon; the solar panel (15) is used for supplying power to the data acquisition and processing module (5), the controller (6), the timer (7), the battery (8) and the wireless communication module (9) which are contained in the data integration processing module (3);
moreover, a temperature sensor (16) is arranged on the placing plate (14), and the high-temperature ultrasonic wall thickness monitor also comprises a placing plate driving mechanism (17);
the mounting plate driving mechanism (17) comprises a motor component and is used for moving the mounting plate (14) to a direction close to or far away from the high-temperature object (4) to be detected according to the temperature of the temperature sensor (16) under the control of the controller (7) so as to provide a 10-40 ℃ working temperature environment for the data acquisition and processing module (5), the controller (6), the timer (7), the battery (8) and the wireless communication module (9) on the mounting plate (14), and ensure the accuracy of data acquisition and the stability and the long-term performance of working; therefore, the positions of the modules are adjusted through the placing plate and the driving mechanism thereof, so that the radiation field of the high-temperature object to be measured provides a proper working temperature environment of 10-40 ℃ for the modules.
2. The high-temperature ultrasonic wall thickness monitor according to claim 1, wherein the high-temperature ultrasonic probe (2) and the high-temperature object (4) to be measured are bonded and fixed by a high-temperature adhesive coupling agent (13), and the high-temperature adhesive coupling agent (13) plays a role in heat insulation.
3. A high temperature ultrasonic wall thickness monitor according to claim 1, wherein a damping block (18) is provided in the high temperature ultrasonic probe (2) on the back side of the high temperature BSPT piezoceramic wafer (11), the damping block being formed from epoxy resin, tungsten powder and curing agent in a ratio of about 2: 1: 0.1 is poured.
4. The high-temperature ultrasonic wall thickness monitor according to claim 1, wherein the wireless communication module (9) wirelessly transmits data in a low-frequency ZigBee wireless transmission manner, the remote monitoring terminal (10) receives the wireless transmission data of the data acquisition terminal (1) at one or more monitoring points on the high-temperature object (4) to be monitored, and the received wall thickness data of the one or more data acquisition terminals (1) is used for simultaneously monitoring the wall thickness variation of the corresponding one or more monitoring points.
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| CN110849972A (en) * | 2019-11-27 | 2020-02-28 | 孙文龙 | Pipeline internal corrosion condition ultrasonic monitoring system and method based on Internet of things |
| CN113433217A (en) * | 2021-06-25 | 2021-09-24 | 西安热工研究院有限公司 | Nondestructive testing device for corrosion reduction of inner wall of water wall tube |
| CN115647684A (en) * | 2022-12-26 | 2023-01-31 | 北京坤飞航天科技有限公司 | Rapid nondestructive detection method and device for surfacing defects |
| CN116608802A (en) * | 2023-07-17 | 2023-08-18 | 中国空气动力研究与发展中心计算空气动力研究所 | Method, device, equipment and medium for synchronously measuring temperature and thickness during thickness variation |
| CN118009945A (en) * | 2024-04-09 | 2024-05-10 | 北京天江源科技有限公司 | Pipeline wall thickness on-line monitoring system and thickness gauge |
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| CN101685127A (en) * | 2008-09-27 | 2010-03-31 | 中国科学院半导体研究所 | Method and apparatus for testing an electro-optical device under a high/low working temperature condition |
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