CN109461788A - A kind of visible and short-wave infrared wide spectrum InGaAs detector of back-illuminated emitting - Google Patents
A kind of visible and short-wave infrared wide spectrum InGaAs detector of back-illuminated emitting Download PDFInfo
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- CN109461788A CN109461788A CN201811226485.0A CN201811226485A CN109461788A CN 109461788 A CN109461788 A CN 109461788A CN 201811226485 A CN201811226485 A CN 201811226485A CN 109461788 A CN109461788 A CN 109461788A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract 10
- 239000002110 nanocone Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000002061 nanopillar Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 20
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 239000012788 optical film Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000004297 night vision Effects 0.000 description 5
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000002174 soft lithography Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 235000002906 tartaric acid Nutrition 0.000 description 3
- 239000011975 tartaric acid Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004501 airglow Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of visible and short-wave infrared wide spectrum InGaAs detectors of back-illuminated emitting.Detector of the present invention improves conventional epitaxial layer structural parameters, within n-contact layer thickness control to 30nm, surface is introduced simultaneously and integrates the design of flannelette anti-film, and the high-performance detection of visible-short-wave infrared (0.4 μm~1.7 μm) broadband range may be implemented.The invention has the characteristics that first, the structural parameters of traditional InGaAs detector epitaxial layer are breached, substantially solve the InGaAs detector technical bottleneck low in visible waveband quantum efficiency；Second, the design of flannelette anti-film is introduced, traditional optical film is compensated for only within the scope of narrow-band special angle with the deficiency of good antireflective effect, provides new approach to realize that InGaAs detector broadband improves quantum efficiency.
Description
Technical field
The present invention relates to the back that a kind of novel InGaAs detector, in particular to a kind of surface integrate flannelette anti-film
Irradiation type detector, it can be realized detects from the high-gain of visible short-wave infrared wide spectral range.
Background technique
Short-wave infrared InGaAs focus planar detector has non-brake method working and room temperature, detectivity in 0.9 μm~1.7 mu m wavebands
High, the advantages that uniformity is good, be advantageously implemented miniaturization, low-power consumption, high reliability infrared system.Exist in night dark situation
The night sky lights, the energy such as moonlight, airglow, starlight be concentrated mainly on visible-short infrared wave band (0.4~1.7 μm).In order to
The high quality imaging for realizing lll night vision environment, develops visible-short-wave infrared broadband indium gallium arsenic (InGaAs) focal plane detection
Device is a research hotspot of short-wave infrared technology, spectral response range and night sky light matched well.Realize high-quantum efficiency
It can be seen that-short-wave infrared wide spectrum InGaAs detector, the novel all solid state InGaAs detector of visible-short-wave infrared wide spectrum is pushed away
To lll night vision application, for realizing that lll night vision imaging technique is integrated, miniaturization is of great significance, take aim in rifle, night vision
There are major application demands for telescope etc..
Summary of the invention
Based on the demand of above-mentioned lll night vision high quality imaging, what the present invention proposed that a kind of surface integrates flannelette anti-film can
See-short-wave infrared wide spectrum InGaAs detector.It can not only guarantee that traditional wave band (0.7 μm~0.9 μm) high quality is imaged,
And the high-gain detection of visible waveband may be implemented.The present invention mainly includes two parts content: first is that visiting in traditional InGaAs
Epitaxial layer structure improvement is carried out on the basis of survey device, it is ensured that the N-shaped InP contact layer thickness on detector module surface is no more than 30nm,
The invalid absorption of visible light is effectively reduced；Second is that realizing that the broadband extensive angle of InGaAs detector increases using flannelette anti-film
Thoroughly, this flannelette anti-film bores (or similar nanocone) structure with the artificial nano of low-index material by conventional multilayer anti-reflection film
Composition.Based on Bruggeman effective media theoryArtificial nano cone knot
The smooth gradual change of structure can be equivalent to different effective refractive indexs.This equivalent refractive index successively decreases step by step since epi-layer surface
Flannelette anti-film can achieve the effect of the ultralow reflection of broadband extensive angle, thus realize InGaAs detector it is visible-shortwave
The high-performance of infrared broadband range detects.
In the present invention, detector schematic diagram is as shown in Figure 1, be successively InGaAs absorbed layer on p-type InP contact layer 3
2, N-shaped InP contact layer 1 and flannelette anti-film 6 are associated with reading circuit 5 by indium column 4 on 3 another side of p-type InP contact layer；
The flannelette anti-film 6 is made of multi-layered antireflection coating 6-1 and class nanocone structures 6-2, and multi-layered antireflection coating 6-1 is used
ZnS、Ta2O5、SiO2Or SiNx, for refractive index between InP and air, the number of plies is 1~4 layers；Class nanocone structures 6-2 is adopted
With pyramid, circular cone, pyrometric cone, side's cone, nano-pillar, triangular prism or square column sub-wavelength structure；
The N-shaped InP contact layer 1 is with a thickness of 5~30nm；
The InGaAs absorbed layer 2 is with a thickness of 2.5 μm or 3 μm；
The InGaAs detector p-type InP contact layer 1 is with a thickness of 1 μm.
Critical process step of the present invention is: 1) epitaxial film materials are improved, and 2) detector chip development, 3) circuit is mutual
Connection, 4) multi-layered antireflection coating low-temperature epitaxy, 5) graphically, and 6) micro-structure processing.Concrete technology flow process is as follows:
1 epitaxial film materials structure is improved, using the improved epitaxial film materials of MBE growth structure, it is ensured that n-contact layer (1)
Thickness is between 5nm~30nm；
2 detector chip developments and the interconnection of 3 circuits are identical as traditional back-illuminated emitting InGaAs detector preparation process, herein
It repeats no more；
4 are prepared multi-layered antireflection coating (6-1) using magnetron sputtering, and film growth temperature avoids indium column high temperature melting less than 45 DEG C
Change；
5 is graphical by class nanocone structures using the advanced microelectronic technique such as nano impression, electron beam exposure, makes N-shaped InP
Contact layer (1) surface has equally distributed class nanocone micro-structure exposure mask；
6 realize the preparation of micro structure array using ICP lithographic technique, etching condition: ICP power 1500W, RF power is
45W, etching temperature be 5 DEG C, etching gas CHF3, exposure mask is removed finally by acetone.
Advantages of the present invention:
The detector breaches traditional InGaAs epitaxial layer structure parameter, substantially reduces InP contact layer to visible light
Invalid absorption；
The detector uses the anti-reflection design of flannelette, breaches and is difficult to find that refractive index lower than SiO in nature2(n<1.5)
Solid-state material limitation so that device can guarantee ultra-low reflectance within the scope of broadband extensive angle, to realize
The detection performance of InGaAs detector wide spectral range is promoted；
Detector preparation is based on mature detector technology of preparing, thin film low temperature growing technology and micro-electronic machining skill
Art, preparation is simple, and feasibility is high.Compared with noble metal plasma, price is more cheap, and production efficiency is higher.
Detailed description of the invention
Fig. 1 is the device architecture schematic diagram of this patent.
In figure:
1 --- N-shaped InP contact layer；
2 --- InGaAs absorbed layer；
3 --- p-type InP contact layer；
4 --- indium column；
5 --- reading circuit；
6-1 --- multi-layered antireflection coating；
6-2 --- artificial nano cone (or similar nanocone) structure.
Specific embodiment
Embodiment 1
The improved InGaAs epitaxial wafer containing barrier layer of 1.MBE growth structure, n-contact layer (1) is with a thickness of 5nm；
2. realizing the preparation of plane InGaAs detector chip using common process, and realizes and read by indium column (4)
Circuit (5) inverse bonding interconnection；
3. removing InP substrate using mechanical polishing and wet etching, InP substrate is thinned to 50nm by mechanically polishing,
Then remaining InP substrate is removed using hydrochloric acid solution phosphoric acid mixed liquor, finally uses tartaric acid solution selective corrosion
InGaAs etching barrier layer；
4. growing SiO on chip N-shaped InP contact layer (1) surface using magnetron sputtering low temperature growth techniques2Anti-reflection film (6-
1), growth temperature is less than 45 DEG C, film thickness 1000nm,；
5. using nano impression soft lithography, the artificial nano for making the anti-reflection film surface (6-1) have periodic arrangement is bored
Structure (6-2) exposure mask；
6. etching SiO using ICP lithographic technique2Nanocone, etching condition are as follows: ICP power 1500W, RF power is
45W, etching temperature be 5 DEG C, etching gas CHF3, ultraviolet stamping glue is removed finally by acetone.
Embodiment 2
The improved InGaAs epitaxial wafer containing barrier layer of 1.MBE growth structure, N-shaped InP contact layer (1) with a thickness of
15nm；
2. realizing the preparation of plane InGaAs detector chip using common process, and realizes and read by indium column (4)
Circuit (5) inverse bonding interconnection；
3. removing InP substrate using mechanical polishing and wet etching, InP substrate is thinned to 50nm by mechanically polishing,
Then remaining InP substrate is removed using hydrochloric acid solution phosphoric acid mixed liquor, finally uses tartaric acid solution selective corrosion
InGaAs etching barrier layer；
4. growing ZnS/SiO on chip N-shaped InP contact layer (1) surface using magnetron sputtering low temperature growth techniques2Bilayer increases
Permeable membrane (6-1), for growth temperature less than 45 DEG C, film thickness is respectively 100nm and 1000nm；
5. using nano impression soft lithography, make the multi-layered antireflection coating surface (6-1) that there is manually receiving for periodic arrangement
Rice rod structure (6-2) exposure mask；
6. etching SiO using ICP lithographic technique2Nano-pillar, etching condition are as follows: ICP power 1500W, RF power is
45W, etching temperature be 5 DEG C, etching gas CHF3, ultraviolet stamping glue is removed finally by acetone.
Embodiment 3
The improved InGaAs epitaxial wafer containing barrier layer of 1.MBE growth structure, N-shaped InP contact layer (1) with a thickness of
30nm；
2. realizing the preparation of plane InGaAs detector chip using common process, and realizes and read by indium column (4)
Circuit (5) inverse bonding interconnection；
3. removing InP substrate using mechanical polishing and wet etching, InP substrate is thinned to 50nm by mechanically polishing,
Then remaining InP substrate is removed using hydrochloric acid solution phosphoric acid mixed liquor, finally uses tartaric acid solution selective corrosion
InGaAs etching barrier layer；
4. growing ZnS/SiO on chip N-shaped InP contact layer (1) surface using magnetron sputtering low temperature growth techniques2/ZnS/
SiO2Four layers of anti-reflection film (6-1), for growth temperature less than 45 DEG C, film thickness is respectively 67nm, 34nm, 24nm and 1000nm；
5. using nano impression soft lithography, make the multi-layered antireflection coating surface (6-1) that there is manually receiving for periodic arrangement
Rice wimble structure (6-2) exposure mask；
6. etching SiO using ICP lithographic technique2Nanocone, etching condition are as follows: ICP power 1500W, RF power is
45W, etching temperature be 5 DEG C, etching gas CHF3, ultraviolet stamping glue is removed finally by acetone.
Claims (1)
1. a kind of visible and short-wave infrared wide spectrum InGaAs detector of back-illuminated emitting, including N-shaped InP contact layer (1),
InGaAs absorbed layer (2), p-type InP contact layer (3), indium column (4), reading circuit (5), flannelette anti-film (6), it is characterised in that:
The structure of the detector are as follows: be successively InGaAs absorbed layer (2), N-shaped InP contact on p-type InP contact layer (3)
Layer (1) and flannelette anti-film (6) are associated with reading circuit (5) by indium column (4) on p-type InP contact layer (3) another side；
The flannelette anti-film (6) is made of multi-layered antireflection coating (6-1) and class nanocone structures (6-2), multi-layered antireflection coating (6-1)
Using ZnS, Ta2O5、SiO2Or SiNx, for refractive index between InP and air, the number of plies is 1~4 layers；Class nanocone structures
(6-2) is using pyramid, circular cone, pyrometric cone, side's cone, nano-pillar, triangular prism or square column sub-wavelength structure；
The N-shaped InP contact layer (1) is with a thickness of 5~30nm；
The InGaAs absorbed layer (2) is with a thickness of 2.5 μm or 3 μm；
The InGaAs detector p-type InP contact layer (1) is with a thickness of 1 μm.
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Cited By (4)
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| CN111739954A (en) * | 2020-06-30 | 2020-10-02 | 苏州大学 | Crystalline silicon solar cell and preparation method thereof |
| CN112002716A (en) * | 2020-08-26 | 2020-11-27 | 中国电子科技集团公司第十一研究所 | Two-class superlattice two-color infrared detector and preparation method thereof |
| CN114551617A (en) * | 2022-01-13 | 2022-05-27 | 华南理工大学 | Single-row carrier photodetector and preparation method thereof |
| CN116705805A (en) * | 2023-08-03 | 2023-09-05 | 太原国科半导体光电研究院有限公司 | Superlattice infrared detector with enhanced incidence and preparation method thereof |
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Application publication date: 20190312 |