CN109455665B - Non-photoetching mesoscale structure mechanical assembly forming method - Google Patents
Non-photoetching mesoscale structure mechanical assembly forming method Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
- B81C1/00515—Bulk micromachining techniques not provided for in B81C1/00507
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
Abstract
The invention provides a non-photoetching mesoscale structure mechanical assembly molding method, which is used for obtaining a three-dimensional target configuration of mesoscales and comprises the following steps: the design steps are as follows: designing a two-dimensional precursor structure corresponding to a target configuration and a pre-stretching strain of an assembly platform for mechanically assembling and forming the two-dimensional precursor structure into the target configuration; the manufacturing steps are as follows: cutting a two-dimensional plane material by using femtosecond laser to form a two-dimensional precursor structure; mechanical assembly molding: and fixing the two-dimensional precursor structure on an assembly platform with pre-stretching strain, and releasing the assembly platform to enable the two-dimensional precursor structure to at least partially buckle and deform, so as to form a target configuration. The preparation method has high processing precision and is suitable for various high-performance materials; the mesoscale structure can be efficiently and economically manufactured, less chemical reagents are used, and the method is environment-friendly; can be compatible with semiconductor manufacturing processes.
Description
Technical Field
The disclosure relates to the technical field of micro-nano processing, in particular to a non-photoetching mesoscale structure mechanical assembling and forming method.
Background
Complex three-dimensional structures on a mesoscale (between macroscopic and microscopic, generally considered between nanometer and millimeter) are widely present in biological systems such as cytoskeletons, neural networks, vascular networks, etc., and assume the most basic functions of living bodies. On the other hand, the micro-structural device with mesoscopic scale has wide application in biomedical devices, micro-electro-mechanical systems, metamaterials, energy storage devices, photoelectric sensing devices and the like. Therefore, the fabrication of three-dimensional structures on a mesoscale has been the focus and the frontier of scientific research.
In the last decade, the three-dimensional structure with mesoscopic scale is difficult to obtain by traditional mechanical processing method, and the forming and manufacturing thereof are always the hot points of research. Currently, the main manufacturing methods of mesoscopic three-dimensional structures are: the manufacturing method comprises a general photoetching shaping processing forming process, a self-assembly forming process depending on a liquid medium, a residual stress bending assembly process, a template-based imprinting and growing process, an additive manufacturing process based on a laser direct writing technology, an additive manufacturing process based on a 3D printing technology and the like.
The existing manufacturing method of the mesoscale three-dimensional structure has the following defects:
firstly, the applicability of these processes is not strong, and is limited by materials, product configurations, etc., for example, the laser direct writing process is limited by photosensitive materials, the 3D printing process is limited by melting of high molecular materials and metal powders, the residual stress bending assembly process is limited by forming structures, etc.;
second, the efficiency of these processes is low;
thirdly, a large amount of chemical reagents are needed in the implementation process of the processes, and most of the processes are toxic and difficult to achieve environment friendliness;
fourth, these processes are difficult to be compatible with semiconductor manufacturing processes.
Disclosure of Invention
The purpose of the disclosure is to provide a non-photoetching mesoscale structure mechanical assembly molding method which is not limited by processing materials, is environment-friendly and efficient, and can be compatible with a semiconductor manufacturing process.
In order to achieve the above object, the present disclosure provides a non-lithographic mesoscale structure mechanical assembly forming method for obtaining a target configuration of mesoscale three-dimension, and forming a two-dimensional precursor structure into the target configuration by mechanical assembly on an assembly platform having a pre-stretching strain amount, the forming method comprising the following steps:
the design steps are as follows: designing a two-dimensional precursor structure corresponding to the target configuration and a pre-stretching strain of an assembly platform for mechanically assembling and forming the two-dimensional precursor structure into the target configuration;
the manufacturing steps are as follows: cutting a two-dimensional planar material using a femtosecond laser to form the two-dimensional precursor structure;
mechanical assembly molding: and fixing the two-dimensional precursor structure on the assembly platform with the pre-stretching strain amount, and releasing the assembly platform to enable the two-dimensional precursor structure to be buckled and deformed, so that the target configuration is formed.
Preferably, the designing step comprises designing a buckling deformation region and a bonding region of the two-dimensional precursor structure, wherein the buckling deformation region is used for buckling deformation, and the bonding region is used for fixing on the assembling platform.
Preferably, the designing step further comprises the steps of:
predicting a three-dimensional configuration, namely an induced configuration, obtained after the two-dimensional precursor structure is subjected to buckling induction by applying a large deformation mechanics theory and finite element calculation;
comparing the induced configuration to the target configuration;
and iteratively correcting the two-dimensional precursor structure and/or the pre-stretching strain quantity according to the comparison result.
Preferably, in the designing step, when the two-dimensional precursor structure is designed, a compensation amount k × n of the laser cutting width is added;
wherein:
k is a scale factor, and the value range is 0.2 to 1;
and n is the laser cutting width.
Preferably, in the manufacturing step, the femtosecond laser cutting process is adjusted to the following parameters: the laser beam energy intensity ranges are: 1 muJ to 5 muJ;
the scanning linear velocity during laser cutting is as follows: 1mm/s to 40 mm/s;
the pressure of the protective gas is: 0.1bar to 0.2 bar.
Preferably, the parameters of the femtosecond laser cutting process are adjusted according to the kind of the two-dimensional plane material.
Preferably, in the manufacturing step, an organic polymer material is spin-coated on the hard substrate for carrying or a finished film is attached to the hard substrate for carrying, and then the two-dimensional planar material formed on the hard substrate is cut by applying a femtosecond laser to obtain the two-dimensional precursor structure.
Preferably, the two-dimensional planar material is formed as a composite film of polyimide and gold.
Preferably, the pre-stretching strain amount is obtained by applying biaxial tension to the assembly platform along the x-axis direction and the y-axis direction of the assembly platform which are perpendicular to each other,
and transferring the two-dimensional precursor structure obtained by cutting to the assembling platform.
Preferably, the two-dimensional precursor structure obtained by cutting is transferred to the assembly platform by means of a water-soluble adhesive tape.
The mechanical assembly forming method of the mesoscale structure provided by the disclosure adopts femtosecond laser to cut a two-dimensional precursor structure, and forms a three-dimensional target configuration through mechanical assembly, and has the following beneficial effects:
first, the machining accuracy is high, the properties of the material are not affected by machining, and the method is suitable for various types of high-performance materials. The limitation of the material in the manufacturing of the mesoscopic scale structure on processing is overcome, and better processing quality can be obtained;
secondly, the mesoscale structure can be manufactured efficiently and economically, mass manufacturing is realized, and the method has the advantages of less use of chemical reagents and environmental friendliness;
thirdly, the method is compatible with the semiconductor manufacturing process, can be adjusted by simple equipment, and can realize the compatibility and butt joint with the semiconductor manufacturing process;
fourthly, the molding method has good and important application prospect in the aspects of biomedical devices, integrated circuits, optical devices and the like.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
FIG. 1 is a flow chart of a non-lithographic mesoscale structure mechanical assembly molding method provided by the present disclosure;
FIG. 2 is a schematic diagram of a non-lithographic mesoscale structure mechanical assembly molding process provided by the present disclosure;
fig. 3 is a schematic diagram of two-dimensional precursor structures and induced configurations in ten specific embodiments of a non-lithographic mesoscale structural mechanical assembly molding method provided by the present disclosure, the ten embodiments being numbered 1 to 10, respectively, where the left side is the designed two-dimensional precursor structure, the bonding region is represented by using shadow filling, and the right side is the induced configuration of the corresponding finite element prediction;
FIG. 4a is an embodiment of a two-dimensional precursor structure designed according to a non-lithographic mesoscale structural mechanical assembly modeling method provided by the present disclosure, showing dimensions of the two-dimensional precursor structure in mm, corresponding to example No. 1 in FIG. 3;
FIG. 4b is yet another embodiment of a two-dimensional precursor structure designed according to a non-lithographic mesoscale structural mechanical assembly modeling method provided by the present disclosure, showing dimensions of the two-dimensional precursor structure in mm, corresponding to example No. 2 in FIG. 3;
FIG. 4c is yet another embodiment of a two-dimensional precursor structure designed according to a non-lithographic mesoscale structural mechanical assembly modeling method provided by the present disclosure, showing dimensions of the two-dimensional precursor structure in mm, corresponding to example No. 5 in FIG. 3;
FIG. 5a is a pictorial representation of embodiment No. 1 of FIG. 3, an embodiment of a two-dimensional planar material corresponding to the two-dimensional precursor structure of FIG. 4a, showing a femtosecond laser cut processed version of the two-dimensional planar material;
FIG. 5b is a pictorial representation of embodiment No. 5 of FIG. 3, an embodiment of a two-dimensional planar material corresponding to the two-dimensional precursor structure of FIG. 4c, illustrating a femtosecond laser cut processed version of the two-dimensional planar material;
FIG. 5c is a pictorial view of an embodiment of the two-dimensional precursor structure of embodiment No. 1 and embodiment No. 5 of FIG. 3, i.e., corresponding to the two-dimensional figures of FIGS. 4a and 4c, showing a femtosecond laser cut machined version of the two-dimensional precursor structure;
FIG. 6a is a detailed view of a portion of a confocal laser microscope after femtosecond laser cutting processing of embodiment No. 1 in FIG. 3, i.e., the embodiment of the two-dimensional precursor structure in FIG. 5a, showing the cutting width of the femtosecond laser processing, and the actual line width of the precursor pattern obtained after processing, and the planar quality after laser processing;
FIG. 6b is a detailed view of a portion of a confocal laser microscope after femtosecond laser cutting of the embodiment No. 5 of FIG. 3, i.e., the embodiment of the two-dimensional precursor structure of FIG. 5b, showing the cutting width of the femtosecond laser processing, the actual line width of the precursor pattern obtained after processing, and the planar quality after laser processing;
fig. 7 is a photomicrograph of the shaped mesoscale structure after mechanical assembly of example 5 in fig. 3, an example of the two-dimensional precursor structure in fig. 5 b.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
The present disclosure provides a non-lithographic mesoscale structural mechanical assembly molding method, which mounts a two-dimensional precursor structure (i.e., a two-dimensional precursor structure manufactured according to a two-dimensional graph) to an assembly platform having a pre-stretching strain amount, and further mechanically assembles (i.e., mechanically-flexed three-dimensional assembly) the two-dimensional precursor structure into a three-dimensional target configuration (hereinafter, collectively referred to as a target configuration). Fig. 1 and 2 are a flow chart and a process schematic diagram of an embodiment of the molding method, respectively.
As shown in fig. 1 and 2, the molding method may generally include a design step, a manufacturing step, and a mechanical assembly molding step.
In the design step:
the target configuration has a two-dimensional graph corresponding to the target configuration, and a two-dimensional structure (namely a two-dimensional precursor structure) manufactured according to the two-dimensional graph can be subjected to buckling deformation to form the target configuration; the two-dimensional precursor structure is designed (for example, the shape and size of the two-dimensional precursor structure), the pre-stretching strain amount of the assembly platform is also designed (for example, the loading direction of the pre-stretching force and the pre-stretching strain amount), and the buckling deformation area and the mounting area of the two-dimensional precursor structure and the assembly platform can also be designed (for example, the position and the number of the mounting areas in the two-dimensional precursor structure).
The design step may further include a correction step:
analyzing the buckling deformation of the two-dimensional precursor structure by utilizing a three-dimensional large deformation mechanics theory, determining material related parameters of the two-dimensional precursor structure, inputting the material related parameters, and predicting a three-dimensional structure (namely an induced configuration) which can be actually obtained after the two-dimensional graph is buckled and deformed by utilizing finite element analysis and calculation;
and comparing the induced configuration with the target configuration, and iteratively correcting the two-dimensional precursor structure, the mounting area of the two-dimensional precursor structure and the assembly platform, and the pre-stretching strain of the assembly platform according to the comparison result.
Fig. 3 provides ten specific embodiments of two-dimensional precursor structures. Fig. 4a to 4c show two-dimensional graphs of three specific embodiments of the two-dimensional precursor structure of fig. 3, showing the buckling deformation region 20 and the bonding region 10.
In the correction step, finite element analysis can be performed on the two-dimensional precursor structure to obtain an induced three-dimensional configuration, namely an induced configuration, the induced configuration is compared with a target configuration, and whether the induced configuration is consistent with the target configuration is judged:
if the two are consistent, the subsequent manufacturing steps are carried out;
if not, the pre-stretching strain amount of the two-dimensional precursor structure and/or the mounting area of the two-dimensional precursor structure and the assembly platform and/or the assembly platform is modified.
It should be understood that the modified parameters may be any, any two, or all of the two-dimensional precursor structure, the mounting area of the two-dimensional precursor structure and the assembly platform, the pre-tension strain amount of the assembly platform.
In the design step, the influence of the femtosecond laser cutting width can be considered, that is, after the laser cutting width n is determined, a compensation amount k × n of the laser cutting width is added to the design of the two-dimensional precursor structure, wherein k is a scale factor and has a value range of 0.2 to 1.
Thus, the method is beneficial to designing a two-dimensional pattern meeting the manufacturing requirement, and a two-dimensional precursor structure is formed more accurately.
In the manufacturing step:
and manufacturing a two-dimensional precursor structure according to the two-dimensional graph determined in the design step, and specifically, cutting a two-dimensional plane material through a femtosecond laser cutting process to form the two-dimensional precursor structure. In the manufacturing step, before cutting into the two-dimensional precursor structure, parameters of the femtosecond laser cutting process may be adjusted, for example, the energy intensity range of the femtosecond laser beam is adjusted to 1 μ J to 5 μ J, the cutting scanning line speed of the femtosecond laser is adjusted to 1mm/s to 40mm/s, and the pressure of the protective gas during cutting is adjusted to 0.1bar to 0.2 bar.
The femtosecond laser cutting process with the parameters can obtain the following beneficial effects: the method can obtain smaller laser cutting width, and further improve the resolution of the two-dimensional precursor structure, namely obtain smaller minimum line width, thereby obtaining better plane quality of the two-dimensional precursor structure.
The femtosecond laser is adopted to cut to form a two-dimensional precursor structure, the laser pulse excited by the femtosecond pulse duration has extremely short duration and extremely high instantaneous focusing power, so that the femtosecond laser cutting process has the following advantages: 1) the femtosecond laser has high spatial resolution and submicron processing precision, and because the femtosecond laser has Gaussian distribution in light intensity space, only in the irradiation region exceeding the multiphoton absorption threshold, the definite processing action occurs, and the processing precision of the obtained femtosecond laser is smaller than the size of a focused light spot; 2) the femtosecond laser has no selectivity and limitation to processing materials, and can finely process and treat any material; 3) the femtosecond laser processing structure has no melting zone, thereby avoiding the generation of microcrack and realizing the 'cold' processing in relative meaning, thereby avoiding a plurality of negative effects brought by the heat effect in the processing.
The non-photoetching mesoscale structure mechanical assembly forming method provided by the disclosure adopts femtosecond laser to cut a two-dimensional precursor structure, and combines mechanical assembly to form a three-dimensional target configuration, and has the following beneficial effects:
firstly, the processing precision is high, the material performance is not influenced by processing, and the method is suitable for various types of high-performance materials, overcomes the limitation of the materials in the manufacturing of mesoscale structures on processing, and can obtain better processing quality;
secondly, the mesoscale structure can be manufactured efficiently and economically, and less chemical reagents are used, so that the environment is friendly;
thirdly, the method is compatible with the semiconductor manufacturing process, can be adjusted by simple equipment, and can realize the compatibility and butt joint with the semiconductor manufacturing process;
fourthly, the molding method has good and important application prospect in the aspects of biomedical devices, integrated circuits, optical devices and the like.
The parameters of the femtosecond laser cutting process can be adjusted according to the material with the mesoscale structure, so that each material has the corresponding parameters of the femtosecond laser cutting process. Therefore, the femtosecond laser cutting process can be suitable for cutting and processing two-dimensional precursor structures of various materials, and the limitation of the materials is overcome.
In the manufacturing step, an organic polymer material is spin-coated on a hard substrate (for example, a glass sheet or a silicon wafer) for supporting; or a film is flatly attached to a hard substrate (such as a glass sheet or a silicon wafer) for bearing, or a two-dimensional plane material is formed on the hard substrate through a chemical deposition growth process; and then, cutting the two-dimensional plane material on the hard substrate by applying femtosecond laser to obtain a two-dimensional precursor structure.
In embodiments where the two-dimensional planar material is formed as a planar film structure, in the design step, in addition to the material parameters that require the addition of a two-dimensional precursor structure, the thickness parameters of the two-dimensional precursor structure are also required to be added when performing the finite element analysis calculations.
The planar film structure may be a single-layer film (e.g., a thin layer of gold, silver, or copper), or a plurality of films stacked together, for example, a composite film of polyimide and a thin layer of metal (e.g., gold, silver, or copper). In a semiconductor process, the thin layer can be used as a material for forming a functional layer of a component, polyimide can be used as a protective layer material of the functional layer to prevent the component from being short-circuited, and the planar film structure is more suitable for the semiconductor process.
In the manufacturing step, in addition to adjusting the parameters of the femtosecond laser cutting process according to the type of the material and the absorptivity of the material to laser energy, the parameters of the femtosecond laser cutting process can also be adjusted according to the thickness of the planar film structure.
The forming method can adjust the technological parameters of the laser according to the material, and can overcome the limitation of the material on the premise of fully utilizing the advantage of high processing precision of the femtosecond laser to the two-dimensional plane material.
In the mechanical assembly molding step, the mounting region of the two-dimensional precursor structure can be reliably connected to the assembly platform through a bonding method. The bonding mode is determined according to the properties of the selected materials, namely, a stable joint surface is formed by improving the surface bonding energy of the bonding region 10 (namely, the mounting region), so that the bonding purpose is achieved, and the two-dimensional precursor structure is ensured to be firmly jointed with the assembly platform in an assembling mode.
The strain of the assembly platform can be obtained by loading biaxial tension, namely loading tension Fx and Fy along the x-axis direction and the y-axis direction of the assembly platform which are perpendicular to each other. When the assembly table is stretched by a stretcher to obtain the above-mentioned strain amount, a region having a uniform strain amount in each direction is formed in the central region of the assembly table for assembling the two-dimensional precursor structure. Biaxial stretching is easy to perform and enables a region of uniform strain amount to be obtained on the assembly table that satisfies the requirements.
After cutting the two-dimensional precursor structure according to the designed two-dimensional graph, the two-dimensional precursor structure is transferred to an assembly platform through a transfer printing technology. In the transfer process, the water-soluble adhesive tape can be used as a seal for transfer printing. Of course, other stamps, such as Polydimethylsiloxane (PDMS) stamps, may also be used.
One specific embodiment of the present disclosure is provided below.
Firstly, designing a two-dimensional precursor structure of a target configuration according to the target configuration, and designing the distribution position of a bonding region 10 for bonding the two-dimensional precursor structure and an assembly platform and the pre-stretching strain amount of the assembly platform. With the configuration No. 1 in FIG. 3 as a target, the prestretching strain amounts of the x axis and the y axis obtained by theoretical calculation are both 30%, and the processing size of the two-dimensional precursor structure, the bonding region 10 and the buckling deformation region 20 are shown in FIG. 4 a.
And (3) carrying out buckling deformation analysis on a two-dimensional precursor structure through a three-dimensional large deformation mechanical theory. Thus, the material parameters of the assembled structure and the thickness parameters of the planar membrane structure are determined (for example, according to the analysis and calculation result, the planar membrane is selected to be the composite of polyimide with the thickness of 5 mu m and gold with the thickness of 160 nm), the related parameters of the materials are input into finite element analysis and calculation, and the three-dimensional structure after buckling induction, namely the induction configuration, is obtained. The resulting induced configuration is compared to the target configuration to iteratively modify the designed two-dimensional precursor structure and bonding region 10 position.
The two-dimensional planar film material with the two-dimensional precursor structure can be prepared by spin coating an organic polymer material on a bearing silicon wafer, or by a chemical deposition growth method, or by flatly attaching a commercial film to a bearing substrate.
And adjusting the processing parameters of the femtosecond laser, and cutting and processing the two-dimensional precursor structure by adopting the femtosecond laser. Here, the processing parameters of the two-dimensional precursor structure are adjusted as follows:
the energy intensity of the laser beam is 2 muJ;
the linear speed of laser cutting and scanning is 10 mm/s;
the protective gas pressure was 0.1 bar.
Under the parameters, the laser cutting width n is 104 μm, and the compensation amount of the laser cutting width n is 52 μm (k × n is 0.5 × 104 μm) on the basis of the original design size.
Preparing an assembly platform (substrate) by adopting silicon rubber, and loading biaxial tension F along the directions of an x axis and a y axisxAnd FyThereby obtaining the above-mentioned amount of pre-stretching strain.
The processed two-dimensional precursor structure was transferred to an assembly platform (silicone rubber substrate) by means of a water-soluble adhesive tape. Meanwhile, the two-dimensional precursor structure and the assembling platform are bonded through the designed bonding region 10, the two-dimensional precursor structure is fixed to the assembling platform through the bonding region 10, and the bonding fixing mode is taken as a specific implementation scheme for fixing the two-dimensional precursor structure and the assembling platform.
And releasing the assembly platform, and buckling deformation occurs in a buckling deformation area 20 of the two-dimensional precursor structure bonded to the assembly platform, so that a three-dimensional target configuration is obtained.
It should be understood that the various steps involved in the present disclosure may be interchanged without significant precedence or order.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It will be understood that the present disclosure is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.
Claims (9)
1. A non-photoetching mesoscale structure mechanical assembly forming method is used for obtaining a three-dimensional target configuration of mesoscales, and is characterized in that a two-dimensional precursor structure is formed into the target configuration through mechanical assembly on an assembly platform with a pre-stretching strain amount, and the forming method comprises the following steps:
the design steps are as follows: designing a two-dimensional precursor structure corresponding to the target configuration and a pre-stretching strain of an assembly platform for mechanically assembling and forming the two-dimensional precursor structure into the target configuration;
the manufacturing steps are as follows: cutting a two-dimensional planar material using a femtosecond laser to form the two-dimensional precursor structure;
mechanical assembly molding: fixing the two-dimensional precursor structure to the assembly platform with the pre-stretching strain amount, and releasing the assembly platform to enable the two-dimensional precursor structure to be buckled and deformed so as to form the target configuration;
in the designing step, adding a compensation k × n of the laser cutting width when designing the two-dimensional precursor structure;
wherein:
k is a scale factor, and the value range is 0.2 to 1;
and n is the laser cutting width.
2. The non-lithographic mesoscale structural mechanics assembly modeling method of claim 1, wherein said designing step comprises designing a buckling deformation region and a bonding region of said two-dimensional precursor structure, said buckling deformation region for buckling deformation, said bonding region for fixing to said assembly platform.
3. The method of claim 2, wherein the designing step further comprises the steps of:
predicting a three-dimensional configuration, namely an induced configuration, obtained by buckling induction of the two-dimensional precursor structure by applying a large deformation mechanics theory and finite element calculation;
comparing the induced configuration to the target configuration;
and iteratively correcting the two-dimensional precursor structure and/or the pre-stretching strain quantity according to the comparison result.
4. The non-lithographic mesoscale structure mechanical assembly modeling method of any of claims 1-3, wherein in said manufacturing step, a femtosecond laser cutting process is adjusted to the following parameters: the laser beam energy intensity ranges are: 1 muJ to 5 muJ;
the laser cutting scanning linear velocity is: 1mm/s to 40 mm/s;
the pressure of the protective gas is: 0.1bar to 0.2 bar.
5. The non-lithographic mesoscale structure mechanical assembly modeling method of claim 4, wherein the parameters of the femtosecond laser cutting process are adjusted according to the type of the two-dimensional planar material.
6. The non-lithographic mesoscale structure mechanical assembly molding method according to any one of claims 1 to 3, wherein in the manufacturing step, an organic polymer material is spin-coated on a hard substrate for carrying or a finished film is attached to the hard substrate for carrying, and then the two-dimensional planar material formed on the hard substrate is cut by applying femtosecond laser to obtain the two-dimensional precursor structure.
7. The method of claim 6, wherein the two-dimensional planar material is formed as a composite film of polyimide and gold.
8. The non-lithographic mesoscale structural mechanical assembly modeling method according to any of claims 1 to 3, wherein the pre-stretching strain is obtained by applying biaxial tension to the assembly platform along the x-axis direction and the y-axis direction of the assembly platform, which are perpendicular to each other, and the two-dimensional precursor structure obtained by laser cutting is transferred to the assembly platform.
9. The method of claim 8, wherein the two-dimensional precursor structure obtained by cutting is transferred to the assembly platform by a water-soluble adhesive tape.
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| EP2017949A1 (en) * | 2007-07-16 | 2009-01-21 | Interuniversitair Microelektronica Centrum (IMEC) | Stepping actuator and method of fabrication |
| US9511995B2 (en) * | 2012-02-15 | 2016-12-06 | Massachusetts Institute Of Technology | Method and apparatus for building three-dimensional MEMS elements |
| CN103204459B (en) * | 2013-03-19 | 2015-12-02 | 清华大学 | The formation method of flexible substrate film surface micro-structure |
| CN104310305B (en) * | 2014-10-28 | 2016-04-06 | 江苏大学 | Large scale array Graphene based on femtosecond laser receives electromechanical resonator preparation method |
| CA2994371A1 (en) * | 2015-06-08 | 2016-12-15 | The Charles Stark Draper Laboratory, Inc. | Method of assembling nanoscale and microscale objects into three-dimensional structures |
| CN106927420B (en) * | 2015-12-29 | 2018-11-27 | 中国科学院物理研究所 | A method of preparing the three-dimensional sight device that is situated between |
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