CN109449303A - A kind of OLED device - Google Patents
A kind of OLED device Download PDFInfo
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- CN109449303A CN109449303A CN201811311387.7A CN201811311387A CN109449303A CN 109449303 A CN109449303 A CN 109449303A CN 201811311387 A CN201811311387 A CN 201811311387A CN 109449303 A CN109449303 A CN 109449303A
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- infraluminescence
- oled device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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Abstract
This application discloses a kind of OLED device, including first electrode, organic function layer and the reflecting electrode set gradually；Organic function layer includes at least one layer of infraluminescence layer and at least one layer of thermal activation delayed fluorescence material light-emitting layer.The combination that the application passes through infrared OLED luminescent material and phosphorescence, fluorescent material or thermal activation delayed fluorescence material, other function material can be heated using the infrared ray that infraluminescence layer issues, improve the carrier mobility of organic functional material under low temperature environment, alleviate the phenomenon that device voltage increases, to improve the stability of device under low temperature, low operating voltage drops.Furthermore, the infrared ray that the application is issued using infraluminescence layer heats thermal activation delayed fluorescence material, promote in thermal activation delayed fluorescence material more triplet excitons to be transformed into singlet exciton by reversed intersystem crossing to shine, to improve luminous efficiency.
Description
Technical field
The application belongs to technical field of organic electroluminescence, and in particular to a kind of OLED device.
Background technique
OLED (Organic Light Emitting Diode, Chinese name organic light emitting display) refers to organic semiconductor
Material and luminescent material are under electric field driven, the phenomenon that injection by carrier with composite guide photoluminescence.According to this luminous original
It manages and display is made or illuminating product is referred to as organic light emitting display or organic light emission illuminating product.
It is latent to show huge development as a new generation's display and lighting engineering at present by OLED (Organic Light Emitting Diode)
Power, OLED is still current key as the promotion in efficiency for lighting engineering and service life at present.
OLED material system is generally divided into, fluorescent material, phosphor material and thermal activation delayed fluorescence material, fluorescent material
It is at low cost, but efficiency is also low, and it is high-efficient for phosphor material, but cost is also high, and it is referred to as next-generation organic light emission
Have the characteristics that in the thermal activation delayed fluorescence materials theory of material high-efficient, at low cost.But thermal activation delayed fluorescence material exists
Can just have better effect at higher temperature, meanwhile, in terms of reliability, OLED device is at low temperature due to current-carrying at present
Transport factor reduction will appear the problems such as voltage increases.
Summary of the invention
In view of drawbacks described above in the prior art or deficiency, it is intended to provide a kind of OLED device, to alleviate OLED under low temperature
Device voltage increases phenomenon and promotes device efficiency.
The application provides a kind of OLED device, including first electrode, organic function layer and the reflecting electrode set gradually；Have
Machine functional layer includes infraluminescence layer and thermal activation delayed fluorescence material light-emitting layer.The application by infrared OLED luminescent material with
The combination of TADF material (thermal activation delayed fluorescence material), can cooperate other phosphorescence, fluorescent material again, be sent out using infraluminescence layer
Infrared ray out can heat other function material, improve the carrier mobility of organic functional material under low temperature environment
Rate alleviates the phenomenon that device voltage increases at low temperature, to improve the stability of device under low temperature, drops low operating voltage.This
Outside, the infrared ray that the application is issued using infraluminescence layer heats thermal activation delayed fluorescence material, and thermal activation is promoted to prolong
More triplet excitons are transformed into singlet exciton by reversed intersystem crossing (RIST) and shine in slow fluorescent material, to mention
High luminous efficiency.
Preferably, distance of the infraluminescence layer apart from reflecting electrode is set as k λ/4n, wherein the integral multiple of k value 2,
Middle λ is that infraluminescence layer shines dominant wavelength (i.e. the corresponding wavelength of crest location), and n is organic function layer refractive index.It is set by this
Meter makes infrared light be in the state of interference cancellation in device inside, so that infrared light is limited in device inside, thus not shadow
Chinese percussion instrument part normally goes out light.
Preferably, infraluminescence layer shines dominant wavelength ranges as 700nm-2500nm.
Preferably, infraluminescence layer material is organic small molecule material, organic polymer, rare earth compounding, transition system gold
Metal complex, quantum dot, organic/hydridization perovskite material etc..
Preferably, OLED device structure is single layer or laminated construction.
Preferably, organic function layer further includes visible fluorescence luminescent layer and/or visible light phosphorescence luminescent layer.
The application has the advantages and positive effects of: infrared OLED material can emit infrared ray, and TADF is as a kind of
Heat lag fluorescent material has excellent high-temperature stability, or even its luminous efficiency can be higher at high temperature.The application proposes one
The new OLED device structure of kind, by the combination of infrared OLED luminescent material and phosphorescence, fluorescent material or TADF material, low
The phenomenon that device voltage increases can be alleviated under temperature, and the luminous efficiency of TADF material can also be improved with TADF material adapted.
Meanwhile by reasonably selecting infraluminescence layer to can reduce infraluminescence layer apart from the distance of reflecting electrode
Introduce the influence to the luminescent properties of device itself.
Meanwhile the material by reasonably selecting infraluminescence layer, so that its main light emission wave-length coverage is 700nm-2500nm,
The range can both guarantee that heating TADF improves the effect of its efficiency, and guarantee that the heating temperature does not damage other organic luminous layers
Material.
The technical issues of in addition to the application described above solution, constitutes the technical characteristic of technical solution and by these
Except advantage brought by the technical characteristic of technical solution, wrapped in other technologies problem that the application can solve, technical solution
Advantage brought by the other technical characteristics contained and these technical characteristics, makees further details of hereinafter in conjunction with attached drawing
Explanation.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon:
Fig. 1 is the OLED device structural schematic diagram that the embodiment of the present application 1, embodiment 2 and embodiment 4 provide；
Fig. 2 is the OLED device structural schematic diagram that the embodiment of the present application 3 provides；
Fig. 3 is the OLED device structural schematic diagram that the application comparative example 1 provides.
The OLED device structural schematic diagram that Fig. 4 is the application comparative example 2, comparative example 3 provides.
In figure: 1, first electrode；2, organic function layer；21, luminescent layer；22, CGL charge generation layer；3, reflecting electrode.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining related invention, rather than the restriction to the invention.It also should be noted that in order to
Convenient for description, part relevant to invention is illustrated only in attached drawing.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
Embodiment 1
Referring to FIG. 1, the present embodiment provides a kind of OLED device, including set gradually first electrode 1, organic function layer
2 and reflecting electrode 3.The device architecture of the present embodiment is three laminated devices, and organic function layer 2 has 3 independent luminescent layers 21, phase
CGL charge generation layer 22 is equipped between adjacent luminescent layer 21.3 different luminescent layers in organic function layer from first electrode 1 to
Reflecting electrode 3 be followed successively by emission wavelength the blue light-emitting of 470nm, emission wavelength 560nm orange smooth luminescent layer and
The dominant wavelength that shines is in the infrared light luminescent layer of 780nm, and wherein emission wavelength uses thermal activation delayed fluorescence in the luminescent layer of 470nm
Material DMOC-DPS, luminescent layer of the emission wavelength in 560nm use phosphor material m-PF-py, and emission wavelength is in the infrared of 780nm
Light luminescent layer uses Ir (mpbqx-g)2acac。
Device provided in this embodiment was 12.6V in (- 40 DEG C) operations of low temperature of fixed output brightness, by 5 minutes
After operation, voltage falls to 11.3V under same brightness, is effectively improved device in the operating characteristic of low temperature.And because in infrared spoke
Reason according under promotes in thermal activation delayed fluorescence material more triplet excitons to be transformed into single line by reversed intersystem crossing
State excitonic luminescence makes the highest external quantum efficiency of device reach 37% to improve luminous efficiency.
Specific device architecture:
ITO/NPB (10nm)/DPEPO (20nm): DMOC-DPS 10%/Bphen (10nm)/Bphen (20nm): Mg
5%)/MoO3(30nm) Bphen of (10nm)/NPB (10nm)/TCTA (20nm)/mcp (30nm): m-PF-py 12%/Bphen
(20nm): Mg 5%)/MoO3(10nm)/NPB (10nm)/TCTA (20nm)/mcp (30nm): Ir (mpbqx-g)2Acac4%/
Bphen(30nm)/LiF(1nm)/Al(150nm)
Wherein, m-PF-py structural formula is as follows:
Ir(mpbqx-g)2Acac structural formula is as follows:
The present embodiment also provides a kind of lighting device including above-mentioned OLED device.
Embodiment 2
Referring to FIG. 1, the present embodiment provides a kind of OLED device, including set gradually first electrode 1, organic function layer
2 and reflecting electrode 3.The device architecture of the present embodiment is three laminated devices, and organic function layer 2 has 3 independent luminescent layers 21, phase
CGL charge generation layer 22 is equipped between adjacent luminescent layer 21.3 different luminescent layers in organic function layer from first electrode 1 to
Reflecting electrode 3 be followed successively by luminous dominant wavelength the infrared light luminescent layer of 780nm, emission wavelength 470nm blue light-emitting with
And emission wavelength, in the orange smooth luminescent layer of 560nm, wherein emission wavelength uses thermal activation delayed fluorescence in the luminescent layer of 470nm
Material DMOC-DPS, luminescent layer of the emission wavelength in 560nm use phosphor material m-PF-py, and emission wavelength is in the infrared of 780nm
Light luminescent layer uses Ir (mpbqx-g)2acac。
Distance of the infraluminescence layer apart from reflecting electrode is set as k λ/4n, in which:
The integral multiple of k value 2, k takes 2 in the present embodiment；
λ is the luminous dominant wavelength of infraluminescence layer, and λ is 780nm in the present embodiment；
N is organic function layer refractive index, and n is 1.8 in the present embodiment.Due to the influence of actual fabrication process other factors,
There is some difference for theoretical calculation and the design of practical devices structure, but belongs in permissible range.
Device provided in this embodiment was 12.6V in (- 40 DEG C) operations of low temperature of fixed output brightness, by 5 minutes
After operation, voltage falls to 10.5V under same brightness, is effectively improved device in the operating characteristic of low temperature.Because of infrared layer distance
The distance of reflecting electrode selects, so that its light for not influencing other luminescent layers, and because of the reason under infrared radiation, promote
More triplet excitons are transformed into singlet exciton by reversed intersystem crossing and shine in thermal activation delayed fluorescence material, thus
Luminous efficiency is improved, the highest external quantum efficiency of device is made to have reached 38%.
Specific device architecture:
ITO/NPB (10nm)/TCTA (20nm)/mcp (30nm): Ir (mpbqx-g)2Acac4%/Bphen (30nm)/
Bphen (10nm): Mg 5%)/MoO3(10nm)/NPB (10nm)/DPEPO (20nm): DMOC-DPS 10%/Bphen
(10nm)/Bphen (10nm): Mg 5%)/MoO3(10nm)/NPB (10nm)/TCTA (20nm)/mcp (30nm): m-PF-py
12%/Bphen (30nm)/LiF (1nm)/Al (150nm)
The present embodiment also provides a kind of lighting device including above-mentioned OLED device.
Embodiment 3
Referring to FIG. 2, the present embodiment provides a kind of OLED device, including set gradually first electrode 1, organic function layer
2 and reflecting electrode 3.The device architecture of the present embodiment is single layer structure, and organic function layer 2 includes two-layer luminescent layer 21, respectively
Infraluminescence layer and blue thermal activation delayed fluorescence material light-emitting layer, luminescent spectrum is respectively 700nm and 470nm.Device is solid
It is 5.2V when exporting (- 40 DEG C) operations of low temperature of brightness surely, after operation in 5 minutes, voltage falls to 4.3V under same brightness,
Device is effectively improved in the operating characteristic of low temperature.And because of the reason under infrared radiation, promote thermal activation delayed fluorescence material
In more triplet excitons by reversed intersystem crossing to be transformed into singlet exciton luminous, to improve luminous efficiency, make
The highest external quantum efficiency of device has reached 19.5%.
Specific device architecture:
(the 10nm)/Ga of ITO/NPB (10nm)/DPEPO (20nm): DMOC-DPS 10%/mcp2(saph)2qz(30nm):
NSeD 4%/Bphen (30nm)/LiF (1nm)/Al (150nm)
The present embodiment also provides a kind of display device including above-mentioned OLED device.
Embodiment 4
Referring to FIG. 1, the present embodiment provides a kind of OLED device, including set gradually first electrode 1, organic function layer
2 and reflecting electrode 3.The device architecture of the present embodiment is three laminated devices, and organic function layer 2 has 3 independent luminescent layers 21, phase
CGL charge generation layer 22 is equipped between adjacent luminescent layer 21.3 different luminescent layers in organic function layer use wavelength to exist respectively
The blue light-emitting of 470nm, with the orange smooth luminescent layer of 560nm and luminescent spectrum 2500nm infraluminescence layer, wherein
Luminescent layer of the emission wavelength in 470nm uses thermal activation delayed fluorescence material DMOC-DPS, luminescent layer of the emission wavelength in 560nm
Using fluorescent material 2,8-di (t-butyl) -5,11-di [4- (t-butyl) phenyl] -6,12-
diphenylnaphthacenceTBRu。
It will be appreciated by those skilled in the art that the emission wavelength of luminescent layer depends on luminescent material itself, with science and technology
Development will will appear the infraluminescence layer of different wave length；Emission wavelength is in 700-2500nm even longer infraluminescence layer, all
It can be realized same as the present application or similar purpose, all within the scope of protection of this application.
Comparative example 1
Referring to FIG. 3, this comparative example provides a kind of OLED device, including set gradually first electrode 1, organic function layer
2 and reflecting electrode 3.The device architecture of this comparative example is two-fold layer device, and organic function layer 2 has there are two independent luminescent layer 21,
CGL charge generation layer 22 is equipped between two luminescent layers 21.Two different luminescent layers in organic function layer use wave respectively
The orange light of blue light in 470nm, 560nm are grown, wherein emission wavelength uses thermal activation delayed fluorescence material in the luminescent layer of 470nm
Material, luminescent layer of the emission wavelength in 560nm use phosphor material.The highest external quantum efficiency of device is 31%.
Specific device architecture:
ITO/NPB (10nm)/DPEPO (20nm): DMOC-DPS 10%/Bphen (10nm)/Bphen (20nm): Mg
5%)/MoO3(the 30nm)/LiF of (10nm)/NPB (10nm)/TCTA (20nm)/mcp (30nm): m-PF-py 12%/Bphen
(1nm)/Al(150nm)
Comparative example 2
Referring to FIG. 4, this comparative example provides a kind of OLED device, including set gradually first electrode 1, organic function layer
2 and reflecting electrode 3.The device architecture of this comparative example is single layer structure, and organic function layer 2 includes one layer of luminescent layer 21, for blue
Thermal activation delayed fluorescence material light-emitting layer, luminescent spectrum 470nm, the peak efficiency of device are 14.5%.
Specific device architecture:
(the 30nm)/LiF (1nm) of ITO/NPB (10nm)/DPEPO (20nm): DMOC-DPS 10%/Bphen/Al
(150nm)
Comparative example 3
Referring to FIG. 4, this comparative example provides a kind of OLED device, including set gradually first electrode 1, organic function layer
2 and reflecting electrode 3.The device architecture of this comparative example is single layer structure, and it is infrared that organic function layer 2, which includes one layer of luminescent layer 21,
Luminescent layer, emission wavelength 700nm, the peak efficiency of device are 2.2%.
Specific device architecture:
ITO/NPB(10nm)/Ga2(saph)2Qz (30nm): NSeD 4%/Bphen (30nm)/LiF (1nm)/Al
(150nm)
Comparative example 1 and comparative example 1, comparative example 3 are as can be seen that because the highest luminous efficiency of infraluminescence layer itself
Only 2.2%, and embodiment 1, compared with comparative example 1, highest external quantum efficiency improves 6%；And embodiment 3 and 2 phase of comparative example
Than highest external quantum efficiency improves 5%；Infraluminescence layer significantly improves the highest external quantum efficiency of device.Compare simultaneously
Embodiment 3 and comparative example 2, comparative example 3 as can be seen that exist simultaneously infraluminescence layer in organic function layer and thermal activation postpone it is glimmering
The outermost quantum efficiency of the OLED device of luminescent material luminescent layer, hence it is evident that higher than postponing with only thermal activation for only infraluminescence layer
The outermost quantum efficiency of the OLED device of fluorescent material luminescent layer, and be higher than and there was only postponing with only thermal activation for infraluminescence layer
The sum of outermost quantum efficiency of the OLED device of fluorescent material luminescent layer.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.Those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed.Such as features described above has similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Claims (7)
1. a kind of OLED device, which is characterized in that including first electrode, organic function layer and the reflecting electrode set gradually；Institute
Stating organic function layer includes at least one layer of infraluminescence layer and at least one layer of thermal activation delayed fluorescence material light-emitting layer.
2. OLED device according to claim 1, which is characterized in that the infraluminescence layer centre of luminescence is apart from described anti-
The distance of radio pole is set as k λ/4n, wherein the integral multiple of k value 2, and λ is the luminous dominant wavelength of infraluminescence layer, and n has to be described
Machine functional layer refractive index.
3. OLED device according to claim 1, which is characterized in that the infraluminescence layer shine dominant wavelength ranges be
700nm-2500nm。
4. OLED device according to claim 1, which is characterized in that the infraluminescence layer material is small organic molecule material
Material, organic polymer, rare earth compounding, Transition-metal complexes, quantum dot or organic/hydridization perovskite material.
5. OLED device according to claim 1, which is characterized in that the OLED device structure is single layer or lamination knot
Structure.
6. OLED device according to claim 1, which is characterized in that the organic function layer further includes visible fluorescence hair
Photosphere and/or visible light phosphorescence luminescent layer.
7. a kind of lighting device or display device including any one of claims 1-6 OLED device.
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| WO2021248552A1 (en) * | 2020-06-10 | 2021-12-16 | 武汉华星光电半导体显示技术有限公司 | Organic light-emitting film layer, oled display panel, and display apparatus |
| CN113903246A (en) * | 2021-04-08 | 2022-01-07 | 义乌清越光电技术研究院有限公司 | Information interaction tag structure and preparation method thereof, information interaction device and preparation method thereof |
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