CN109449146A - The preparation method of the miniature light-emitting diode display of stacked structure - Google Patents
The preparation method of the miniature light-emitting diode display of stacked structure Download PDFInfo
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- CN109449146A CN109449146A CN201811341971.7A CN201811341971A CN109449146A CN 109449146 A CN109449146 A CN 109449146A CN 201811341971 A CN201811341971 A CN 201811341971A CN 109449146 A CN109449146 A CN 109449146A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The present invention provides a kind of preparation method of miniature light-emitting diode display of stacked structure, is related to display technology field.This method is that multiple LED elements are placed in the first substrate, and there are three types of the same primary colors in primary colors for each LED element tool in the multiple LED element；Then one or more LED elements in multiple LED elements of the same primary colors are transferred to the second substrate from the first substrate；The step of step 1 at least once and step 2 are all implemented for the LED element of each primary colors of primary colors remaining in three kinds of primary colors；The LED element of three kinds of primary colors stacks placement in the second substrate, third substrate is placed on the surface of miniature RGB LED unit array, obtains the miniature light-emitting diode display of stacked structure.Three miniature RGB LED elements not instead of planar alignment of miniature RGB unit array of the invention, stacked arrangement, in this way saving RGB unit area, can be improved the resolution ratio of display.
Description
Technical field
The present invention relates to display technology fields, and in particular to a kind of preparation method of the miniature light-emitting diode display of stacked structure.
Background technique
LED is the abbreviation of Light Emitting Diode, and Chinese entitled " light emitting diode " is a kind of is with semiconductor
The light-emitting component of luminescent material.Its principle is the compound generation photon of electron-hole in semiconductor, and emission wavelength depends on material
Energy gap, can cover ultraviolet to infrared wave-length coverage.
Miniature LED also becomes micro- LED, micro LED or μ LED, is very small size of LED, and usually less than 300 μm.
Miniature light-emitting diode display is a kind of emerging display device, is integrated in using LED, that is, Minitype LED array of highdensity micro-dimension
Display pixel is used as on substrate, to realize that image is shown.Compared with extensive LCD technology, miniature light-emitting diode display provides higher
Contrast, faster response speed and lower energy consumption.
The prior art provides one by one and manufactures rgb pixel, and RGB is at one during manufacturing miniature light-emitting diode display
In plane.Since this process takes a long time, for large-scale production and the following application demand, need higher
Effect, faster and clearer manufacturing method.RGB of the invention refers to three primary colors (RED is red, and GREEN is green, and BLUE is blue).
Summary of the invention
The purpose of the invention is to provide a kind of preparation method of miniature light-emitting diode display of stacked structure, this method operation
Easy, high production efficiency, obtained LED display pixel density are high.
The present invention provides a kind of preparation method of miniature light-emitting diode display of stacked structure, this method comprises:
Step 1: placing multiple LED elements in the first substrate, and each LED element in the multiple LED element has
There are three types of the same primary colors in primary colors；
Step 2: by one or more LED elements in multiple LED elements of the same primary colors from the first substrate
It is transferred to the second substrate；
Step 3: step at least once is all implemented for the LED element of each primary colors of primary colors remaining in three kinds of primary colors
One and the step of step 2；The LED element of three kinds of primary colors stacks placement in the second substrate, until the LED element of three kinds of primary colors
Miniature RGB LED unit array is constituted, wherein each miniature RGB LED unit of the miniature RGB LED unit array
Including a red LED element, a green LED elements and a blue-led element；
Step 4: third substrate is placed on the surface of miniature RGB LED unit array, it is miniature obtains stacked structure
Light-emitting diode display.
Preferably, first substrate is blue film, UV film or temperature control film.
Preferably, first substrate is GaAs substrate, sapphire substrates or silicon base.
The step 2 specifically includes:
1) the same primary colors is picked up or removed from first substrate using the method for transfer device or laser lift-off
Multiple LED elements in one or more LED elements；
2) by one or more of the multiple LED elements for the same primary colors picked up or removed from the first substrate
LED element is placed into the corresponding position of the second substrate；
It 3) will be from one or more in the multiple LED elements for the same primary colors picked up or removed in first substrate
A LED element is fixed to the corresponding position of the second substrate；
4) repeat to implement above step 1), 2) and 3), until obtaining the miniature RGB LED unit array.
Preferably, the transfer device is to utilize vacuum suction, magnetic absorption, Electrostatic Absorption, adhesive or Fan De
Magnificent power picks up the device of the miniature LED element.
Preferably, the laser-stripping method is using the first substrate described in laser irradiation, and being used for will be described same
One or more LED elements in multiple LED elements of primary colors are separated from first substrate.
Preferably, second substrate is silicon base or substrate of glass.
Preferably, the spacing of each RGB LED unit of the miniature RGB LED unit array is less than or equal to 100 μ
m。
It preferably, further include forming step in the step three, the forming step will using Lithography Etching technique
The miniature LED element of red, the miniature LED element of green and the miniature LED element heap of blue of the miniature RGB unit array stack
It sets.
Preferably, each RGB LED unit of the miniature RGB unit array is red miniature in vertical direction
LED element, the miniature LED element of green and the miniature LED element of blue it is each one layer or red miniature one layer of LED element, green it is micro-
Miniature totally one layer of LED element with blue of type LED element.
The beneficial effects of the present invention are:
The present invention does not need to provide and manufacture RGB picture one by one in the manufacture miniature light-emitting diode display technical process of stacked structure
Element, entire manufacturing process elapsed time is shorter, is suitble to the miniature light-emitting diode display of large-scale production；With easy to operate and production effect
The advantages that rate is high；
The present invention is during manufacturing miniature light-emitting diode display, and the miniature RGB LED element of three of miniature RGB unit array is not
It is planar alignment, but stacked arrangement, i.e., each RGB LED unit of miniature RGB unit array is red in vertical direction
Color micro LED element, the miniature LED element of green and the miniature LED element of blue each one layer or red miniature one layer of LED element,
Miniature totally one layer of LED element with blue of the miniature LED element of green.It can also be superimposed with four colors, be from bottom to top red, yellow, green and blue, it can also
Be not one pixel arrangement of each color by every unit, for example, red × m+ it is green × n+ indigo plant × q, >=1, m, n, q can be with by m, n, q
It is equal, it can also be unequal.Alternatively, red × m+ Huang × l+ it is green × n+ indigo plant × q, m, l, n, q >=1, m, l, n, q can be equal,
It can also be unequal.Area is saved in this way, and the resolution ratio of display can be improved.
Detailed description of the invention
Fig. 1 is the flow diagram of the method for the present invention manufacture miniature light-emitting diode display of stacked structure；
Fig. 2 is that the present invention places multiple first LED array schematic diagrames in the first substrate；
Fig. 3 is the cross-sectional view that the present invention places multiple first LED arrays in the first substrate；
Fig. 4 is miniature vertical type LED schematic diagram in the present invention；
Fig. 5 is the cross-sectional view of miniature vertical type LED in the present invention；
Fig. 6 is miniature flip chip type LED schematic diagram in the present invention；
Fig. 7 is the cross-sectional view of miniature flip chip type LED in the present invention；
Fig. 8 is miniature flip chip type LED schematic diagram in the present invention；
Fig. 9 is the cross-sectional view of miniature flip chip type LED in the present invention；
Figure 10 is to utilize transfer device by the first LED array of one or more of multiple first LED arrays in the present invention
The schematic diagram of the second substrate is transferred to from the first substrate；
Figure 11 is to utilize transfer device by the first LED array of one or more of multiple first LED arrays in the present invention
The cross-sectional view of the second substrate is transferred to from the first substrate；
Figure 12 is the signal for the operation being transferred to the first LED array using transfer device in the present invention in the second substrate
Figure；
Figure 13 is the section view for the operation being transferred to the first LED array using transfer device in the present invention in the second substrate
Figure；
Figure 14 is the schematic diagram for the operation being transferred to the second LED array using transfer device in the present invention in the second substrate
Figure 15 is the section view for the operation being transferred to the second LED array using transfer device in the present invention in the second substrate
Figure；
Figure 16 is that the second LED array is transferred on the second substrate and the first LED array by transfer device in the present invention
Schematic diagram；
Figure 17 is the schematic diagram for the RGB LED unit array being arranged in the second substrate in the present invention；
Figure 18 is the expanded view for the RGB LED unit array being arranged in the second substrate in the present invention；
Figure 19 is the RGB LED layout viewing of another structure；
Figure 20 is the side view of the miniature light-emitting diode display of stacked structure of the present invention；
Figure 21 is the side view of another mechanism of the miniature light-emitting diode display of stacked structure of the present invention；
Figure 22 is the main view of the miniature light-emitting diode display of stacked structure of the present invention.
Specific embodiment
Below with reference to each attached drawing, invention is further described in detail.
The preferred embodiment of the present invention will now be described in more detail, have cut line in embodiments, it is notable that
Appended drawing reference or reference number similar or identical refers to identical element.In this regard, each embodiment may have not
Same form, and should not be limited only to explanation proposed in this paper to explain.Correspondingly, it is retouched below only by reference to some attached drawings
Each embodiment is stated to explain the various aspects of this specification.The term as used herein merely to description purpose, not purport
Limiting range disclosed herein.Term " includes " and/or "comprising" (verb form and/or present participle form) are for illustrating
There are the element of specified defined, step, operation and/or components, but do not preclude the presence or addition of one or more other elements,
Step, operation and/or component.Term " first ", " second " etc. can be used for describing various elements, but be not restricted to these yuan
Part.These terms are only used to distinguish a kind of element and another element.
The following explanation of embodiment is disclosed according to the present invention and combines each attached drawing, these aspects and/or other aspects are to this
It becomes apparent and is easier to understand for the those of ordinary skill in field.Each attached drawing describes each implementation disclosed by the invention
Example, only for the purpose of explanation.From the following description, those skilled in the art will be easily, it is realized that without departing substantially from this
In the case where the principle of disclosure of the invention, the alternative embodiment of structures and methods of the invention can be used.
It is aobvious that the present disclosure provides the miniature LED of manufacture stacker mechanism of high-resolution (HD) and ultrahigh resolution (UHD)
Show the method for device, such as the light-emitting diode display for smart phone, smartwatch and VR.Miniature light-emitting diode display is that direct-injection type is shown
Device.According to miniature LED technology, rgb light is directly emitted by miniature LED pixel, does not need any filter.Miniature LED is shown
The pixel of device is usually less than 100 μm, and it can also be four colors that RGB of the invention, which refers to three primary colors (RED is red, and GREEN is green, and BLUE is blue),
Or more.
Fig. 1 is the flow diagram of the manufacturing method of micro-led (μ LED) display disclosed by the invention.It should
Method includes:
Step 1: multiple LED elements 10,20,30, each of the multiple LED element are placed in the first substrate 100
LED element 10,20,30 all has that there are three types of the same primary colors in primary colors；Such as LED element 10 is red element, LED element 20
For green components, LED element 30 is blue element；
Step 2: by 10,20,30 one or more LED elements 10 in multiple LED elements of the same primary colors,
20,30 the second substrate 300 is transferred to from the first substrate 100；
Step 3: the LED element 10,20,30 of each primary colors of primary colors remaining in three kinds of primary colors is all implemented at least
The step of step 1 and step 2；The LED element of three kinds of primary colors stacks placement in the second substrate 300, until three kinds of originals
The LED element of color constitutes miniature RGB LED unit array, wherein each miniature RGB of the miniature RGB LED unit array
LED unit 40 all includes 10, green LED elements 20 of a red LED element and a blue-led element 30；
Step 4: third substrate 500 is placed on the surface of miniature RGB LED unit array, it is micro- obtains stacked structure
Type light-emitting diode display.
It is further described below in reference to each step of Fig. 2~Figure 22 to preparation method disclosed by the invention.
Fig. 2 is the perspective diagram for illustrating to place multiple LED elements 10 in the first substrate 100.Fig. 3 illustrates that setting exists
The cross-sectional view of multiple LED elements of adhesion layer 110 and the first substrate 100.In the placement process of step 1, provide with more
First substrate 100 of a LED element 10.Multiple LED elements 10 form the first LED array 10.First LED array 10 it is each
It is a that all there is the first color.In similar mode, multiple LED elements 20 can form second with second of color
LED array 20, and multiple LED elements 30 can form the third array 30 with the third color.The first color, second
Each in kind color and the third color is all one of primary colors, respectively includes but is not limited to red, green or blue.
For example, the first LED array 10 is hereafter only described in detail, but the second LED array 20 and third LED array 30 can adopt
It is provided with similar method.
Referring to Fig. 2, pel spacing is determined by the width of two adjacent first LED elements 10 or the integral multiple of its width.
In addition, the pel spacing of transverse and longitudinal both direction can not wait.Therefore step 1 determines that the pel spacing of miniature light-emitting diode display takes
It is worth range.
Referring to Fig. 2 and Fig. 3, each of multiple first LED elements 10 all have first surface 10a and second surface
10b.Second surface 10b is arranged to face to the opposite direction of first surface 10a.Due to each in multiple first LED elements 10
It is a to be all arranged to face to the same direction, therefore hereinafter, multiple first LED elements 10 commonly known as all have first
Surface 10a and second surface 10b.
Referring to Fig. 2 and Fig. 3, multiple LED elements 10 are attached in the first substrate 100 using the first adhesion layer 110.First base
The first surface 10a of bottom 100 and multiple LED elements 10 contact.First substrate is not particularly limited, preferably blue film,
UV film, temperature control film or other material of certain adhesive force can be provided；Either GaAs substrate, sapphire substrates, silicon base or
The material that other growths LED is used.First adhesion layer may include transparent photosensitive curing compounds, wax layer, UV film and temperature control film etc..
As long as multiple LED elements 10 can be satisfactorily attached on first surface 100, and can be changed adhesiveness according to condition and be
It can.
Several structures of first element 10 in Fig. 9, as Fig. 2 and Fig. 3 are arrived referring to fig. 4.First element 10 includes N- electrode
11, active material 12 and P- electrode 13.Each of N- electrode 11 and P- electrode 13 are made of metal material, that is, Ni, Au etc.,
It and may also include that can be attracted to a magnet or the magnetic material with magnetic field interaction.When comprising can be attracted to a magnet or
With magnetic field when mutually multi-purpose magnetic material, magnetic field can promote the first LED array 10 from the first substrate 100.Active material 12
It is not particularly limited, including N-GaN layers of (not shown), active layer (not shown) and p-GaN layer (not shown) or N-AlGaInP
The materials such as (not shown), active layer (not shown) and P-GaP (not shown), active material 12 are prepared according to conventional method in that art
, it is not particularly limited.
Apparent surface's (also referred to as vertical-type knot of LED element is arranged in reference Fig. 4 and Fig. 5, N- electrode 11 and P- electrode 13
Structure), hereinafter, N- electrode 11 and P electrode 13 are generally referred to as electrode or hard contact.Although illustrating P electrode in Fig. 4
13 downwards, but might not be exactly that P electrode is contacted with the first adhesion layer 110, such as N electrode 11 can also be with the first adherency
Layer 110 contacts, and N electrode 11 and P electrode 13 can be set on opposing surfaces.It is disclosed in other embodiments in the present invention, N
Electrode 11 and P electrode 13 may also be arranged on the same surface.
Referring to Fig. 6 to Fig. 9, N electrode 11 and P electrode 13 are arranged on the same surface (also referred to as flip chip type structure),
Middle Fig. 6 and Fig. 7 is square structure, and Fig. 8 and Fig. 9 are string configuration.In fact, LED element in practice will not be as shown
It is regular, as long as but electrode in apparent surface is referred to as vertical-type LED, electrode is referred to as flip chip type same surface
LED。
Figure 10 is illustrated LED gusts of one or more of multiple first LED arrays 10 the first using transfer device 200
Column are transferred to the schematic diagram of the second substrate 300 from the first substrate 100.In the transfer process of step 2, transfer device 200 is selected
The first LED element 10 of one or more of multiple first LED elements is moved to property the second substrate from the first substrate 100
300。
Referring to fig. 4, transfer device 200 LED element and can be inhaled from picking up in substrate in the transfer process of step 2
Firmly any device of LED element.Transfer device of the present invention is the common device of those skilled in the art, without spy
Different limitation, for example, transfer device can use vacuum suction, magnetic absorption, Electrostatic Absorption, adhesive or Van der Waals force etc. to mention
Any device of LED element is risen, to pick up the first LED array 10.Transfer device 200 can be the magnetism using magnetic absorption
Pick device, but it is not limited to this.Transfer device 200 may include permanent magnet or electromagnet or other can produce magnetic force
Device.Transfer device 200 can use LED gusts of the pickup of the magnetic force selectivity of the generation of magnetic array 210 and movement the multiple first
First LED array of one or more of column 10 10.For example, transfer device 200 can be from the first substrate 100 laterally every one
It is a or longitudinal every the first LED array 10 pickup one.Multiple first LED arrays 10 in first substrate 100 are set
Color having the same, and need it is selective be moved to the second substrate 300, to be arranged all in the second substrate 300
Three kinds of primary colors, i.e., red, green and blue.Magnetic array 210 is the magnetic array of tool, can produce magnetic field.It is being moved through
The second surface 10b of the first LED 10 of one or more of transfer device 200 and multiple first LED arrays 10 is contacted in journey.
Figure 11 is the cross-sectional view of Figure 10.First substrate 100 can be heated to soften or melt the first adhesion layer 110
Or the viscosity of the first adhesion layer 110 is reduced using other modes, so that the first LED array 10 can be easily from the first base
It is separated on bottom 100.
Figure 12 is the operation for illustrating to be transferred to the first LED array 10 using transfer device 200 in second substrate 300
Schematic diagram, Figure 13 are the cross-sectional views of Figure 12.Transfer device, which can be discharged, to be promoted from the first substrate 100 and is placed on the second substrate 300
On the first LED array 10, which can be silicon base substrate of glass or other and any can do on it
The substrate of semiconductor technology.There are previously fabricated driving circuit, electrode and previously fabricated and drive in second substrate 300
The lead and electrode of dynamic circuit connection, and only in air, other parts are covered by insulating layer for electrode exposure.In this feelings
Under condition, first LED array 10 can be attached in the second substrate 300 by the second adhesion layer 310.Second adhesion layer may include
Wax layer, UV film and temperature control film etc..
Figure 14 is the operation for illustrating to be transferred to the second LED array 20 using transfer device 200 in second substrate 300
Schematic diagram, Figure 15 are the cross-sectional views of Figure 14.After the first LED array 10 is transferred to the second substrate 300 by transfer device 200,
It does to insulate on second substrate and the first LED array 10 and structurally and electrically connects (not shown).Transfer device 200 is by second
LED array 20 is promoted from the first substrate and is placed on the second substrate 300 and the first LED array.In such a case, it is possible to logical
It crosses third adhesion layer 410 second LED array 20 is attached on the second substrate 300 and the first LED array.Third adhesion layer can be with
Including transparent photosensitive curing compounds, wax layer, UV film and temperature control film etc..Figure 16 is that transfer device 200 shifts the second LED array 20
Schematic diagram on the second substrate 300 and the first LED array.
Figure 17 is to illustrate the schematic diagram for 40 array of RGB LED unit being arranged in the second substrate 300.Figure 18 is Figure 17
Expanded view.In implementation steps three, for the 2nd LED of each of multiple second LED arrays 20 and third LED array 30
Array 20 and third LED array 30 all at least implement primary the step of placing and shifting, until the setting of RGB LED unit array exists
In second substrate 300.RGB LED unit array includes that there are three types of primary colors i.e. red, the LED of green and blue is mono- at least one tool
Member.
Referring to Figure 17 and Figure 18,40 array of RGB LED unit includes the first LED array 10, the second LED array 20 and third
A part of at least one of LED array 30.The spacing of each RGB LED unit 40 is less than or equal to 100 μm.Particularly,
The spacing of one LED array 10 determines the spacing of RGB LED unit 40.
Figure 19 is the RGB LED layout viewing of another structure, and the second LED array 20 and third LED array 30 are same
Plane is stacked on the first LED array 10.Likewise, in implementation steps three, for multiple second LED arrays 20 and third
Second LED array of each of LED array 30 20 and third LED array 30 all at least implement the primary step placed and shift
Suddenly, until 40 array of RGB LED unit is arranged in the second substrate 300.40 array of RGB LED unit includes that at least one has
Three kinds of primary colors are red, green and blue LED units.
Figure 20-22 is the structural schematic diagram of the miniature light-emitting diode display of stacked structure, when obtaining RGB in the second substrate 300
After LED unit array, implementation steps four place third substrate 500 on the surface of RGB LED unit array, make RGB LED unit
Array is arranged between the second substrate 300 and third substrate 500, finally obtains the miniature light-emitting diode display of stacked structure.Described
Three substrates 500 act to protect RGB LED array or other function, third substrate include glass plate, Trackpad or
Play the role of the protection materials of protection and light transmission to RGB LED array, the protection materials are epoxy resin, epoxy-plastic packaging
Material, silica gel or silicone plasties.
Claims (10)
1. a kind of preparation method of the miniature light-emitting diode display of stacked structure, which is characterized in that this method comprises:
Step 1: placing multiple LED elements in the first substrate, and each LED element in the multiple LED element has three
Same primary colors in kind primary colors；
Step 2: one or more LED elements in multiple LED elements of the same primary colors are shifted from the first substrate
To the second substrate；
Step 3: for the LED element of each primary colors of primary colors remaining in three kinds of primary colors all implement step 1 at least once and
The step of step 2；The LED element of three kinds of primary colors stacks placement in the second substrate, until the LED element of three kinds of primary colors is constituted
Miniature RGB LED unit array, wherein each miniature RGB LED unit of the miniature RGB LED unit array includes
One red LED element, a green LED elements and a blue-led element；
Step 4: third substrate being placed on the surface of miniature RGB LED unit array, and it is aobvious to obtain the miniature LED of stacked structure
Show device.
2. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 1, which is characterized in that described
The first substrate be blue film, UV film or temperature control film.
3. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 2, which is characterized in that described
First substrate is GaAs substrate, sapphire substrates or silicon base.
4. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 1, which is characterized in that step
Two specifically include:
1) the more of the same primary colors are picked up or removed from first substrate using the method for transfer device or laser lift-off
One or more LED elements in a LED element；
It 2) will be first from one or more LED in the multiple LED elements for the same primary colors picked up or removed in the first substrate
Part is placed into the corresponding position of the second substrate；
3) by one or more of the multiple LED elements for the same primary colors picked up or removed from first substrate
LED element is fixed to the corresponding position of the second substrate；
4) repeat to implement above step 1), 2) and 3), until obtaining the miniature RGB LED unit array.
5. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 4, which is characterized in that described
Transfer device be the miniature LED is picked up using vacuum suction, magnetic absorption, Electrostatic Absorption, adhesive or Van der Waals force
The device of element.
6. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 4, which is characterized in that described
Laser-stripping method be using the first substrate described in laser irradiation, for will be in multiple LED elements of the same primary colors
One or more LED elements are separated from first substrate.
7. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 1, which is characterized in that described
The second substrate be silicon base or substrate of glass.
8. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 1, which is characterized in that described
The spacing of each RGB LED unit of miniature RGB LED unit array is less than or equal to 100 μm.
9. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 1, which is characterized in that described
The step of three in further include forming step, the forming step is using Lithography Etching technique by the miniature RGB unit array
Red miniature LED element, the miniature LED element of green and the miniature LED element of blue are stacked and are placed.
10. a kind of preparation method of the miniature light-emitting diode display of stacked structure according to claim 1, which is characterized in that described
Each RGB LED unit of miniature RGB unit array is red miniature LED element, the miniature LED member of green in vertical direction
Part and the miniature LED element of blue each one layer or red miniature one layer of LED element, the miniature LED element of green and the miniature LED of blue
Totally one layer of element.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811341971.7A CN109449146A (en) | 2018-11-12 | 2018-11-12 | The preparation method of the miniature light-emitting diode display of stacked structure |
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| CN201811341971.7A CN109449146A (en) | 2018-11-12 | 2018-11-12 | The preparation method of the miniature light-emitting diode display of stacked structure |
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| CN109449146A true CN109449146A (en) | 2019-03-08 |
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| CN201811341971.7A Pending CN109449146A (en) | 2018-11-12 | 2018-11-12 | The preparation method of the miniature light-emitting diode display of stacked structure |
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| CN110034224A (en) * | 2019-04-26 | 2019-07-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of transfer method based on bar shaped Micro-LED |
| TWI741740B (en) * | 2020-08-10 | 2021-10-01 | 大陸商深超光電（深圳）有限公司 | Micro led display panel and method for making same |
| US11605325B2 (en) | 2019-10-07 | 2023-03-14 | Samsung Electronics Co., Ltd. | Display device and method of operating the same |
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Application publication date: 20190308 |