CN109438739A - The preparation method of polythiophene antistatic silicon systems release film - Google Patents
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Abstract
The present invention relates to a kind of preparation methods of polythiophene antistatic silicon systems release film, the polythiophene antistatic silicon systems release film, including base membrane layer and antistatic release layer, the hyaline membrane that base membrane layer is 25~150 microns, it is filled with nanoscale gas-phase silica on the surface of base membrane layer, the outer surface coating of base membrane layer is fitted with antistatic release layer；Contain polythiophene in the composition of antistatic release layer.Polythiophene anti-static liquid technology；Due to the big pi bond that its structural unit is five centers, six electronics, there are 6 pi-electrons, meet Huckel's rule, six electronics energy delocalization, electron delocalization flowing, and the singly-bound between structural unit, due to the presence of inductive effect and δ-π hyperconjugation, this singly-bound has the feature of partial double bond, and whole system is made to possess anti-static ability；The track that polythiophene is formed is circle/line alternate type, and compared with general macromolecule anti-static liquid linear track, since circular portion has two electron orbits, anti-static ability is more preferable and is not easy to be destroyed.
Description
Technical field
The present invention relates to a kind of release technical field of membrane, are related to a kind of preparation side of polythiophene antistatic silicon systems release film
Method.
Background technique
Release film, also known as stripping film, isolation film, seperation film.Under normal conditions in order to increase the off-type force of plastic film, meeting
Plastic film is done into plasma treatment, or applies fluorine processing, or applies silicon (silicone) mould release on the surface layer of film material, such as
PET, PE, OPP, etc.；Allow it for a variety of different organic pressure sensitive adhesives (such as pressure sensitivity of hot melt adhesive, acrylic glue and rubber series
Glue) extremely light and stable off-type force can be shown.Since release film has many advantages, such as to be isolated, fill, protect, be easily peeled off,
Therefore it is widely used in the fields such as various electronics, communication, machinery.Silicon systems protection mould is that a be mainly used in protects electricity
The screen protecting film of sub- product, the system on silicon protective film of present mainstream are PET silica gel screen protecting films, and silicon systems protective film does not dissolve in
Water and most solvents, absorption property is high, and exhaust velocity is fast, thermal stability is good, chemical property is stable, has higher mechanical strong
Degree, it is not easy to it loses powder, anti-high and low-temp (- 50~120 DEG C).At present in silicon systems protective film, in antistatic system generally used now
It is interior, mainly there are following a few classes:
1) electron type anti-static liquid generates electronics using anti-static liquid, flows electronics within a certain area, can make to produce
Raw electrostatic against electronics flowing and export, the disadvantage is that timeliness is short, once curing of coatings is complete, anti-static ability can sharply under
Drop；
2) ionic anti-static liquid refers to that anti-static liquid generates the lesser particle unit of particle radii, mostly cation, LI+,
Be2+Deng, these cations flow within a certain area, the electrostatic of generation can be also exported, the disadvantage is that cost is too high, production cost
Height, advantage are to be influenced by solidification situation smaller；
3) the third is organic anti-static liquid, and such is usually high-molecular compound, using conjugatedπbond etc., forms one
The track of charged particle flowing, the charged particle trajectory that this anti-static liquid is formed are carried out only towards a direction, i.e., thus
The direction that macromolecule extends；It compared with inorganic anti-electrostatic liquid, can preferably be mixed with silicone oil, keep silicone coating performance more stable；But
It is that anti-static ability is weak, generally 1011Ω。
Therefore, it is necessary to develop a kind of polythiophene antistatic silicon systems release film and preparation method thereof that antistatic performance is high.
Summary of the invention
The object of the present invention is to provide a kind of polythiophene antistatic silicon systems release films that antistatic performance is high.
In order to solve the above technical problems, the design scheme that the present invention uses is, and the polythiophene antistatic silicon systems release film, packet
Base membrane layer and antistatic release layer are included, the hyaline membrane that the base membrane layer is 25~150 microns is filled on the surface of the base membrane layer
There is nanoscale gas-phase silica, the outer surface coating of the base membrane layer is fitted with antistatic release layer；It is characterized in that, described anti-
Contain polythiophene in the coating fluid composition of electrostatic release layer.
By adopting the above technical scheme, in basement membrane selection, the hyaline membrane provided using Lekai material, thickness 25 or 36 or
50 or 75 or 100 or 125 or 150 μm, surface layer has fills by nanoscale gas-phase silica, increases its wear-resisting property；Using
Polythiophene anti-static liquid technology, the molecular formula of polythiophene isDue to it
Structural unit is the big pi bond of five centers, six electronics, there is 6 pi-electrons, meets Huckel's rule, six electronics can delocalization, electronics from
Domain flowing, and the singly-bound between structural unit, due to the presence of inductive effect and δ-π hyperconjugation, this singly-bound has part double
The feature of key, makes whole system possess anti-static ability；Antistatic track is
Antistatic track is formed along dotted line, the track that polythiophene is formed is circle/line alternate type, compared with general macromolecule antistatic liquidus
Property track, since circular portion has two electron orbits, anti-static ability is more preferable, is not easy to be destroyed；With it is general organic anti-
The comparison of electrostatic liquid, anti-static ability is more preferable, and impedance value can reach 109Ω is smaller than conventional organic antistatic coating fluid impedance value
Two number magnitudes；In addition, directly release layer is made to have the function of antistatic in this way, than traditional antistatic backing and release layer
Separated has saved cost, has saved technique, while also more durable.
As the preferred technical solution of the present invention, the coating fluid composition of the antistatic release layer matches in parts by weight
Are as follows: 30~50 parts of toluene, 30~50 parts of butanone, 1~10 part of organic silicone oil B057,1~10 part of organic silicone oil B037,0.5~1.5
Part silane coupling agent, 1~10 part of auxiliary material, 0.05~5 part of polythiophene, 1~5 curing agent.
3, polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the antistatic is release
The coating fluid composition of layer matches in parts by weight are as follows: 40 parts of toluene, 40 parts of butanone, 5 parts of organic silicone oil B057,5 parts of organic silicone oils
B037,1 part of silane coupling agent, 5 parts of auxiliary materials, 2 parts of polythiophenes, 2 curing agent.
As the preferred technical solution of the present invention, the molecular weight of the organic silicone oil B057 is 40000~60000, viscosity
It is 18000~30000；Its molecular structure are as follows:
As the preferred technical solution of the present invention, the molecular weight of the organic silicone oil B037 is 40000~60000, viscosity
It is 18000~30000；Its molecular structure are as follows:
It is release that the present invention also technical problems to be solved are to provide a kind of polythiophene antistatic silicon systems that antistatic performance is high
The preparation method of film.
In order to solve the above technical problems, the design scheme that the present invention uses is, the polythiophene antistatic silicon systems release film
Preparation method, specifically includes the following steps:
(1) it prepares solvent: toluene and butanone being mixed in proportion, mixed solvent is prepared into；
(2) prepare release liquid: the in the mixed solvent prepared in step (1) be added reactivity organic silicone oil B057 with
B037 is stirred 15~30 minutes, is put into silane coupling agent, is persistently stirred and put into auxiliary material, polythiophene, curing agent, stir evenly,
The release coating fluid of antistatic is made；
(3) the release coating fluid of application step (2) prepared antistatic on base membrane layer, through 100~150 after coating completion
DEG C drying, winding molding, be made polythiophene antistatic silicon systems release film.
As the preferred technical solution of the present invention, the material of the base membrane layer is PET resin or/and polyethylene (PE).
As the preferred technical solution of the present invention, the PET base membrane layer is light transmittance 95% or more, mist degree is 1.6~
1.8% PET film body.
As the preferred technical solution of the present invention, the step (2) carries out corona in basement membrane layer surface, makes its surface severe
Corona.
As the preferred technical solution of the present invention, the silane coupling agent is KH550；The auxiliary material includes nanoscale gas phase
One of white carbon black, nanoscale silicon powder, advection agent C1-C4 lipoid substance, adhesive agent XC-01 or a variety of mixing；Curing agent
For 2% chloroplatinic acid catalyst.
Compared with prior art, beneficial effects of the present invention: the polythiophene that the polythiophene antistatic silicon systems release film uses is anti-
Electrostatic liquid technology；Due to the big pi bond that its structural unit is five centers, six electronics, there are 6 pi-electrons, meets Huckel's rule, six electricity
It is sub can delocalization, electron delocalization flowing, and the singly-bound between structural unit, due to depositing for inductive effect and δ-π hyperconjugation
This singly-bound has the feature of partial double bond, and whole system is made to possess anti-static ability；The track that polythiophene is formed is the friendship of circle/line
For type, compared with general macromolecule anti-static liquid linear track, since circular portion has two electron orbits, anti-static ability
More preferably, it is not easy to be destroyed；It is compared with general organic anti-static liquid, anti-static ability is more preferable, and impedance value can reach 109, than
Conventional organic small two numbers magnitude of antistatic coating fluid impedance value.
Specific embodiment
Embodiment 1: the polythiophene antistatic silicon systems release film, including base membrane layer and antistatic release layer, the base membrane layer
For 75 microns of hyaline membrane, nanoscale gas-phase silica, the outer surface of the base membrane layer are filled on the surface of the base membrane layer
Coating is fitted with antistatic release layer；The coating fluid composition of the antistatic release layer matches in parts by weight are as follows: 40 parts of toluene,
40 parts of butanone, 5 parts of organic silicone oil B057,5 parts of organic silicone oil B037,1 part of silane coupling agent, 5 parts of auxiliary materials, 2 parts of polythiophenes, 2 are consolidated
Agent；The molecular weight of the organic silicone oil B057 is 40000~60000, and viscosity is 18000~30000；Its molecular structure are as follows:The molecular weight of the organic silicone oil B037 be 40000~
60000, viscosity is 18000~30000；Its molecular structure are as follows:
Embodiment 2: the polythiophene antistatic silicon systems release film, including base membrane layer and antistatic release layer, the base membrane layer
For 75 microns of hyaline membrane, nanoscale gas-phase silica, the outer surface of the base membrane layer are filled on the surface of the base membrane layer
Coating is fitted with antistatic release layer；Contain polythiophene in the coating fluid composition of the antistatic release layer；The antistatic from
The coating fluid composition of type layer matches in parts by weight are as follows: 30 parts of toluene, 50 parts of butanone, 10 parts of organic silicone oil B057,2 parts of organosilicons
Oily B037,1.5 parts of silane coupling agents, 2 parts of auxiliary materials, 3 parts of polythiophenes, 3 curing agent；The molecular weight of the organic silicone oil B057 is
40000~60000, viscosity is 18000~30000；Its molecular structure are as follows:The molecular weight of the organic silicone oil B037 be 40000~
60000, viscosity is 18000~30000；Its molecular structure are as follows:
Embodiment 3: the polythiophene antistatic silicon systems release film, including base membrane layer and antistatic release layer, the base membrane layer
For 75 microns of hyaline membrane, nanoscale gas-phase silica, the outer surface of the base membrane layer are filled on the surface of the base membrane layer
Coating is fitted with antistatic release layer；Contain polythiophene in the coating fluid composition of the antistatic release layer；The antistatic from
The coating fluid composition of type layer matches in parts by weight are as follows: 50 parts of toluene, 30 parts of butanone, 2 parts of organic silicone oil B057,10 parts of organosilicons
Oily B037,0.5 part of silane coupling agent, 8 parts of auxiliary materials, 5 parts of polythiophenes, 5 curing agent；The molecular weight of the organic silicone oil B057 is
40000~60000, viscosity is 18000~30000；Its molecular structure are as follows:The molecular weight of the organic silicone oil B037 be 40000~
60000, viscosity is 18000~30000；Its molecular structure are as follows:
Embodiment 4: the polythiophene antistatic silicon systems release film, including base membrane layer and antistatic release layer, the base membrane layer
For 75 microns of hyaline membrane, nanoscale gas-phase silica, the outer surface of the base membrane layer are filled on the surface of the base membrane layer
Coating is fitted with antistatic release layer；The coating fluid composition of the antistatic release layer matches in parts by weight are as follows: 40 parts of toluene,
40 parts of butanone, 5 parts of organic silicone oil B057,5 parts of organic silicone oil B037,1 part of silane coupling agent, 5 parts of auxiliary materials, 0.05 part of polythiophene, 2
Curing agent；The molecular weight of the organic silicone oil B057 is 40000~60000, and viscosity is 18000~30000；Its molecular structure
Are as follows:The molecular weight of the organic silicone oil B037 is
40000~60000, viscosity is 18000~30000；Its molecular structure are as follows:
In release film using this formula, peeling force is between 6-14g, coating weight 0.3-0.4g/m2, and remnants are then
Rate is 80% or more, these are substantially the same with the release film data that polythiophene is prevented are not had to.Impedance value test is using 5 points of tests
Method, i.e. the four of sample angle and centre respectively take 1 point of test, obtain five data, impedance value average value is 109.4 Ω, than one
As organic small two orders of magnitude of anti-static liquid impedance value (1011 Ω).
It is that 0.5% (with the sum of silicone oil amount B057+B037 for 100, then polythiophene is by experiment test polythiophene dosage
0.5) impedance value is minimum, and conductive effect is carried out, and increases dosage, and impedance value is not also further added by.
The preparation method following examples 5 of the preparation method of the polythiophene antistatic silicon systems release film of above-described embodiment 1~4
~7, wherein embodiment 1 and 4 is prepared using the method for embodiment 5, and embodiment 2 is prepared using the method for embodiment 6,
Embodiment 3 is prepared using the method for embodiment 7.
Embodiment 5: a kind of preparation method of polythiophene antistatic silicon systems release film, specifically includes the following steps:
(1) it prepares solvent: toluene and butanone being mixed in proportion, mixed solvent is prepared into；
(2) prepare release liquid: the in the mixed solvent prepared in step (1) be added reactivity organic silicone oil B057 with
B037 is stirred 15 minutes, is put into silane coupling agent, is persistently stirred and put into auxiliary material, polythiophene, curing agent, stir evenly, and is made
The release coating fluid of antistatic；
(3) corona, the release coating of application step (2) prepared antistatic on base membrane layer are carried out to the surface of base membrane layer
Liquid, coating are dried after completing through 100 DEG C, press counterdie, then through the obtained polythiophene antistatic silicon systems of 100 DEG C of drying winding molding from
Type film；The material of the base membrane layer is PET resin；The PET base membrane layer is light transmittance 95% or more, mist degree is 1.6~
1.8% PET film body；The silane coupling agent is KH550；The auxiliary material include nanoscale gas-phase silica, nanoscale silicon powder,
The mixture of advection agent C1-C4 lipoid substance, adhesive agent XC-01；The chloroplatinic acid catalyst that curing agent is 2%.
Embodiment 6: the preparation method of the preparation method of the polythiophene antistatic silicon systems release film specifically includes the following steps:
(1) it prepares solvent: toluene and butanone being mixed in proportion, mixed solvent is prepared into；
(2) prepare release liquid: the in the mixed solvent prepared in step (1) be added reactivity organic silicone oil B057 with
B037 is stirred 22 minutes, is put into silane coupling agent, is persistently stirred and put into auxiliary material, polythiophene, curing agent, stir evenly, and is made
The release coating fluid of antistatic；
(3) corona, the release coating of application step (2) prepared antistatic on base membrane layer are carried out to the surface of base membrane layer
Liquid, coating are dried after completing through 120 DEG C, press counterdie, then through the obtained polythiophene antistatic silicon systems of 120 DEG C of drying winding molding from
Type film；The material of the base membrane layer is PET resin；The PET base membrane layer is light transmittance 95% or more, mist degree is 1.6~
1.8% PET film body；The silane coupling agent is KH550；The auxiliary material include nanoscale gas-phase silica, nanoscale silicon powder,
The mixture of advection agent C1-C4 lipoid substance；The chloroplatinic acid catalyst that curing agent is 2%.
Embodiment 7: the preparation method of the preparation method of the polythiophene antistatic silicon systems release film specifically includes the following steps:
(1) it prepares solvent: toluene and butanone being mixed in proportion, mixed solvent is prepared into；
(2) prepare release liquid: the in the mixed solvent prepared in step (1) be added reactivity organic silicone oil B057 with
B037 is stirred 30 minutes, is put into silane coupling agent, is persistently stirred and put into auxiliary material, polythiophene, curing agent, stir evenly, and is made
The release coating fluid of antistatic；
(3) corona, the release coating of application step (2) prepared antistatic on base membrane layer are carried out to the surface of base membrane layer
Liquid, coating are dried after completing through 150 DEG C, press counterdie, then through the obtained polythiophene antistatic silicon systems of 150 DEG C of drying winding molding from
Type film；The material of the base membrane layer is PET resin；The PET base membrane layer is light transmittance 95% or more, mist degree is 1.6~
1.8% PET film body；The silane coupling agent is KH550；The auxiliary material includes nanoscale gas-phase silica, advection agent C1-C4
Mixture in lipoid substance, adhesive agent XC-01；The chloroplatinic acid catalyst that curing agent is 2%.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail it is bright, it is all at this it should be understood that above is only a specific embodiment of the present invention, be not intended to restrict the invention
Within the spirit and principle of invention, any modification, equivalent substitution, improvement and etc. done, such as some component shape or material
Change；It should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of polythiophene antistatic silicon systems release film, including base membrane layer and antistatic release layer, the base membrane layer is 25~150
The hyaline membrane of micron is filled with nanoscale gas-phase silica on the surface of the base membrane layer, and the outer surface of the base membrane layer is coated with
It is fitted with antistatic release layer；It is characterized in that, containing polythiophene in the coating fluid composition of the antistatic release layer.
2. polythiophene antistatic silicon systems release film according to claim 1, which is characterized in that the antistatic release layer
Coating fluid composition matches in parts by weight are as follows: 30~50 parts of toluene, 30~50 parts of butanone, 1~10 part of organic silicone oil B057,1~
10 parts of organic silicone oil B037,0.5~1.5 part of silane coupling agent, 1~10 part of auxiliary material, 0.05~5 part of polythiophene, 1~5 curing agent.
3. polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the antistatic release layer
Coating fluid composition matches in parts by weight are as follows: 40 parts of toluene, 40 parts of butanone, 5 parts of organic silicone oil B057,5 parts of organic silicone oil B037,
1 part of silane coupling agent, 5 parts of auxiliary materials, 2 parts of polythiophenes, 2 curing agent.
4. polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the organic silicone oil B057's
Molecular weight is 40000~60000, and viscosity is 18000~30000；Its molecular structure are as follows:
5. polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the organic silicone oil B037's
Molecular weight is 40000~60000, and viscosity is 18000~30000；Its molecular structure are as follows:
6. a kind of preparation method of polythiophene antistatic silicon systems release film, which is characterized in that specifically includes the following steps:
(1) it prepares solvent: toluene and butanone being mixed in proportion, mixed solvent is prepared into；
(2) prepare release liquid: reactive organic silicone oil B057 and B037 is added in the in the mixed solvent prepared in step (1), stirs
It mixes 15~30 minutes, puts into silane coupling agent, persistently stir and put into auxiliary material, polythiophene, curing agent, stir evenly, be made anti-
The release coating fluid of electrostatic；
(3) the release coating fluid of application step (2) prepared antistatic on base membrane layer, coating are dried after completing through 100~150 DEG C
Dry, polythiophene antistatic silicon systems release film is made in winding molding.
7. the preparation method of polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the basement membrane
The material of layer is PET resin or/and polyethylene (PE).
8. the preparation method of polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the PET
Base membrane layer is light transmittance 95% or more, the PET film body that mist degree is 1.6~1.8%.
9. the preparation method of polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the step
(2) corona is carried out in basement membrane layer surface, makes its surface severe corona.
10. the preparation method of polythiophene antistatic silicon systems release film according to claim 2, which is characterized in that the silicon
Alkane coupling agent is KH550；The auxiliary material includes nanoscale gas-phase silica, nanoscale silicon powder, advection agent C1-C4 lipid chemical combination
One of object, adhesive agent XC-01 or a variety of mixing；The chloroplatinic acid catalyst that curing agent is 2%.
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| CN114075389A (en) * | 2020-08-21 | 2022-02-22 | 昆山威斯泰电子技术有限公司 | Antistatic coating, antistatic anti-scratch touch screen PET protective film and manufacturing method thereof |
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