CN109427565B - 一种晶圆切割方法 - Google Patents
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Abstract
本发明提供了一种晶圆切割方法,包括:S1提供待切割晶圆片,晶圆片中包括生长衬底和外延结构;S2沿晶圆片中切割槽中心线的两侧,从晶圆片正面对外延结构分别进行切割直至露出生长衬底;S3沿晶圆片的切割槽中心线,从晶圆片正面进行切割至预设深度;S4沿切割槽中心线的切割切痕,从晶圆片背面对其进行劈裂,完成对晶圆片的切割,得到单颗管芯。以此避免现有技术中采用激光一次切割至指定深度的生长衬底的过程中,由大功率激光在晶圆沟槽表面聚集大量热量,因沟槽各类材料差异导致热量分布不均/散热异常等情况破坏管芯表面结构使芯片失效的情况出现。
Description
技术领域
本发明涉及半导体发光二极管领域,特别涉及一种晶圆切割方法。
背景技术
LED是一种能够将电能转化为可见光的固态的半导体器件,其发光原理是电激发光,即在PN结上加正向电流后,自由电子与空穴复合而发光,从而直接把电能转化为光能。LED,尤其是白光LED,作为一种新的照明光源材料被广泛应用着,它具有反应速度快、抗震性好、寿命长、节能环保等优点而快速发展,目前已被广泛应用于景观美化及室内外照明等领域。
激光切割广泛应用于半导体与LED芯片制造行业,用于将晶圆切割成晶粒。但是,目前的激光切割工艺一般都是采用一次切至指定深度(如图1所示,深度一般在衬底厚度的1/4到1/2之间)后再通过劈裂的方式使晶圆裂成单颗晶粒。当晶圆正面结构较复杂尤其多种金属与绝缘材料交叠时,因激光产生的热量分布不均,可能使器件失效,在量产过程中严重影响产品良率。
发明内容
针对上述问题,本发明旨在提供一种晶圆切割方法,有效提升晶圆片的切割效率和稳定性。
为达到上述目的,本发明提供的技术方案如下:
一种晶圆切割方法,包括:
一种晶圆切割方法,包括:
S1提供待切割晶圆片,所述晶圆片中包括生长衬底和外延结构;
S2沿晶圆片中切割槽中心线的两侧,从晶圆片正面对外延结构分别进行切割直至露出生长衬底;
S3沿晶圆片的切割槽中心线,从晶圆片正面进行切割至预设深度;
S4沿切割槽中心线的切割切痕,从晶圆片背面对其进行劈裂,完成对晶圆片的切割,得到单颗管芯。
进一步优选地,在步骤S2,沿晶圆片中切割槽中心线的两侧,从晶圆片正面对外延结构分别进行切割直至露出生长衬底中,具体为:
沿晶圆片中切割槽中心线的两侧,从晶圆片正面使用第一预设功率的激光对外延结构分别进行切割直至露出生长衬底。
进一步优选地,所述第一预设功率的功率范围为1~4W。
进一步优选地,在步骤S2中,沿切割槽中心线对称切割,且距离切割槽中心线预设距离进行切割。
进一步优选地,在步骤S2,沿晶圆片的切割槽中心线,从晶圆片正面进行切割至预设深度中,具体为:
沿晶圆片的切割槽中心线,从晶圆片正面使用第二预设功率的激光进行切割至预设深度,所述第二预设功率大于第一预设功率。
进一步优选地,所述第二预设功率的功率范围为4~10W。
在本发明提供的晶圆片切割方法中,将现有的使用激光一次切透的方式改为两次切割,在第一次切割的过程中,沿切割槽两侧使用低功率的激光分别切割晶圆片表面的外延结构等直到露出生长衬底,之后使用大功率的激光切割沿切割槽中心线对晶圆片进行切割到指定深度,最后使用背面劈裂的方法完成晶圆片的切割,得到单颗管芯,以此避免现有技术中采用激光一次切割至指定深度的生长衬底的过程中,由大功率激光在晶圆沟槽表面聚集大量热量,因沟槽各类材料差异导致热量分布不均/散热异常等情况破坏管芯表面结构使芯片失效的情况出现。实践证明,该切割方法相对于现有激光一次切透的方式切割后的电性良率提升明显(目前产线上某类产品晶圆切割后电性良率仅在50%以内),达到99%以上。
附图说明
图1为现有技术中激光一次切割示意图;
图2为本发明中晶圆切割方法流程示意图;
图3为本发明中使用低功率激光对晶圆片进行第一次切割示意图;
图4为本发明中图3所示第一次切割的基础上使用激光二次切割示意图;
图5为本发明中劈裂示意图。
具体实施方式
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对照附图说明本发明的具体实施方式。显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图,并获得其他的实施方式。
为使图面简洁,各图中的只示意性地表示出了与本发明相关的部分,它们并不代表其作为产品的实际结构。
基于现有技术采用一次激光切透的方式对晶圆片进行切割中存在的不足,本发明提供了一种全新的晶圆切割方法,如图2所示,在该晶圆切割方法中包括:S1提供待切割晶圆片,晶圆片中包括生长衬底和外延结构;S2沿晶圆片中切割槽中心线的两侧,从晶圆片正面对外延结构分别进行切割直至露出生长衬底;S3沿晶圆片的切割槽中心线,从晶圆片正面进行切割至预设深度;S4沿切割槽中心线的切割切痕,从晶圆片背面对其进行劈裂,完成对晶圆片的切割,得到单颗管芯。
在该晶圆切割方法中,得到待切割的晶圆片之后,将晶圆片固定(如,黏贴在白膜上);之后,沿晶圆片上切割槽中心线的两侧从晶圆片正面使用第一预设功率的激光31分别对外延结构进行切割直至露出生长衬底,如图3所示;之后,沿晶圆片上切割槽中心线从晶圆片正面使用第二预设功率的激光对晶圆片进行切割至预设深度,如图4所示;最后,沿二次切割的切痕,从晶圆片背面使用劈刀4对其进行劈裂,如图5所示,完成对晶圆片的切割,得到单颗管芯。具体,这里的生长衬底可以为硅衬底、蓝宝石衬底等,这里同样不做具体限定。
在使用高功率激光对晶圆片切割之前,使用低功率(第一预设功率)的激光对生长衬底表面的外延结构等进行切割,这样,使用高功率激光进行切割时,不会破坏管芯的电学性能。具体,第一预设功率的功率范围为1~4W,优选使用3W。在其他实施方式中,还可以采用其他方式对外延结构等进行切割,如使用一定宽度的刀片等,只要不破坏管芯结构和外延结构的电学性能即可。
生长衬底表面的外延结构等切割完成之后,进一步使用一定功率的激光沿切割槽中心线进行切割到一定深度,便于后续的劈裂。具体,第二预设功率的功率范围为4~10W,优选为8W。此外,这里晶圆片切割的深度根据实际情况进行确定,如,在一实例中,生长衬底的厚度为175μm,则激光切割至70μm的深度,再进行劈裂。在其他实例中,还可以切割至50μm、60μm、80μm等,这里不做具体限定。此外,这里的生长衬底可以为硅衬底、蓝宝石衬底等,这里同样不做具体限定。
在一实例中,切割槽的宽度为60μm;生长衬底为硅衬底,厚度为175μm,在切割过程中:首先采用功率为3W的低功率激光沿切割槽中心线(低功率激光切割位置距离中心线5μm)对外延结构进行切割直到露出硅衬底为止;之后,使用8W激光沿切割槽的中心线进行切割直到硅衬底,切割深度为70um;最后,将晶圆片放置在劈裂机上,硅衬底背面进行劈裂,完成切割得到单颗管芯。
Claims (4)
1.一种晶圆切割方法,其特征在于,所述晶圆切割方法中包括:
S1 提供待切割晶圆片,所述晶圆片中包括生长衬底和外延结构;
S2 沿晶圆片中切割槽中心线的两侧,从晶圆片正面对外延结构分别进行切割直至露出生长衬底;
S3 沿晶圆片的切割槽中心线,从晶圆片正面进行切割至预设深度;
S4 沿切割槽中心线的切割切痕,从晶圆片背面对其进行劈裂,完成对晶圆片的切割,得到单颗管芯;
在步骤S2,沿晶圆片中切割槽中心线的两侧,从晶圆片正面对外延结构分别进行切割直至露出生长衬底中,具体为:
沿晶圆片中切割槽中心线的两侧,从晶圆片正面使用第一预设功率的激光对外延结构分别进行切割直至露出生长衬底;
在步骤S3,沿晶圆片的切割槽中心线,从晶圆片正面进行切割至预设深度中,具体为:
沿晶圆片的切割槽中心线,从晶圆片正面使用第二预设功率的激光进行切割至预设深度,所述第二预设功率大于第一预设功率。
2.如权利要求1所述的晶圆切割方法,其特征在于,所述第一预设功率的功率范围为1~4W。
3.如权利要求1或2所述的晶圆切割方法,其特征在于,在步骤S2中,沿切割槽中心线对称切割,且距离切割槽中心线预设距离进行切割。
4.如权利要求1所述的晶圆切割方法,其特征在于,所述第二预设功率的功率范围为4~10W。
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CN103456857A (zh) * | 2013-09-27 | 2013-12-18 | 聚灿光电科技(苏州)有限公司 | Led芯片及其制备方法 |
CN104752571A (zh) * | 2013-12-31 | 2015-07-01 | 晶能光电(江西)有限公司 | 一种晶圆级白光led芯片的切割方法 |
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