CN109423606A - Focusing ring and its corrosion-resistant means of defence - Google Patents
Focusing ring and its corrosion-resistant means of defence Download PDFInfo
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- CN109423606A CN109423606A CN201710736818.3A CN201710736818A CN109423606A CN 109423606 A CN109423606 A CN 109423606A CN 201710736818 A CN201710736818 A CN 201710736818A CN 109423606 A CN109423606 A CN 109423606A
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- Prior art keywords
- electrostatic chuck
- focusing ring
- ring
- plasma
- coating
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- 230000007797 corrosion Effects 0.000 title claims abstract description 16
- 238000005260 corrosion Methods 0.000 title claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 48
- 239000011248 coating agent Substances 0.000 claims abstract description 45
- 239000000919 ceramic Substances 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 230000000747 cardiac effect Effects 0.000 claims 1
- 238000003682 fluorination reaction Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 24
- 238000005240 physical vapour deposition Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004078 cryogenic material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002320 enamel (paints) Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229940105963 yttrium fluoride Drugs 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
Abstract
The invention discloses a kind of focusing ring and its corrosion-resistant means of defences, its peripheral side for being located at ceramic electrostatic chuck and the electrostatic chuck middle layer for being equipped with electrostatic chuck side seal circle, electrostatic chuck ceramic layer is located above the electrostatic chuck middle layer, electrostatic chuck middle layer is located above the matrix for the electrostatic chuck being arranged in plasma etch chamber, the matrix peripheral side of electrostatic chuck is equipped with dead ring, and focusing ring is located at the top of dead ring；Wafer is arranged in electrostatic chuck ceramic layer, covers a part of upper surface of the extended loop of focusing ring, and the focusing ring is equipped with main ring and extended loop；Focusing ring is deposited with the coating of resisting plasma corrosion in whole or in part.The present invention has the service life for increasing focusing ring, and stable plasma etching technics protects electrostatic chuck, the advantages of increasing electrostatic chuck and the service life of other components, reduce production cost.
Description
Technical field
The present invention relates to semiconductor processing equipment fields, and in particular to a kind of focusing ring, the electrostatic card including the focusing ring
Disk and its corrosion-resistant means of defence.
Background technique
In the prior art, in plasma etch chamber, the focusing ring (focus that is directly exposed in plasma
Ring) generally can preferred high-purity material be made, such as silicon or silicon carbide etc..When etching (ETCH) board is to wafer
When carrying out plasma treatment, it can usually encounter focusing ring and larger, the short problem of service life is lost；And especially to electrostatic card
When disk (Electrostatic chuck, abbreviation ESC) carries out clearing up (waferless clean) without wafer, as shown in Figure 1, by
In not placing wafer (wafer) in electrostatic chuck ceramic layer 3, at this time since focusing ring 1 is fully exposed in etching environment 7,
The loss to focusing ring 1 is then increased, it has been speeded and rate is lost；Due to the transition loss of focusing ring, electrostatic chuck will lead to
Gap 8 between focusing ring 1, cause to make etching gas (process gases) more with corrosivity and pollution,
Between between the electrostatic chuck and focusing ring that the gases such as free radical (radicals), plasma (plasma) pass through above-mentioned increase
Gap, Corrosive attack electrostatic chuck side wall (ESC sidewall), electrostatic chuck side wall sealing ring (ESC side sealing) with
And other components；The service life of above-mentioned electrostatic chuck is reduced, and causes electrostatic chuck arc extinguishing discharge failure (ESC
Arcing fail) while, also cause to cause undesirable influence to the processing of wafer, such as its particle for releasing
(particle) a series of problems, such as pollution wafer, electrostatic chuck.
In existing coating (Coating) application technology, yttrium oxide (Y2O3) etc. ceramics be anti-plasma etching painting
Layer.However, at present using the Y of plasma spray coating (plasma spray, PS) preparation2O3Equal coatings have high surface roughness
The tissue of (Ra is greater than 4 microns) and high porosity (volume fraction is greater than 3%), are also easy to produce particle dirt in plasma etch process
Dye.Other yttria coating preparation processes, as chemical vapor deposition (chemical vapor deposition, CVD) usually exists
Y is made on high temperature (> 600 DEG C) matrix2O3Coating, and physical vapour deposition (PVD) (physical vapor deposition, PVD)
Deposition rate is low, high production cost.These technology defects, which limit, prepares high-densit Y2O3Coating and at 16 nanometers or less
Application in the high-accuracy chip plasma etching processing technology of scale.
Summary of the invention
It is an object of the present invention to provide a kind of focusing rings, utilize coating technique, plasma enhancing physical vapour deposition (PVD)
(Plasma enhanced physical vapour deposition, PEPVD) is realized on focusing ring to high-densit Y2O3It applies
The deposition of layer reaches stable plasma etching technics to overcome the problems, such as that focusing ring is lost by plasma etching, protects quiet
Electric card disk reduces a series of purpose of production problems such as cost.
In order to achieve the goal above, the invention is realized by the following technical scheme:
A kind of focusing ring for plasma treatment, the focusing ring are made of ceramic materials, and the focusing ring includes one
A main ring, wherein the first upper surface at the top of main ring has the first height, is the extension protruded to focusing ring center on the inside of main ring
Ring, the second upper surface at the top of the extended loop have the second height, and the second height is less than first height,
Wherein the second upper surface inside region is coated with plasma resistant coating, and extended loop inside side walls are coated with anti-etc. simultaneously
Ionic coating.
Preferably, the surface coated with the plasma resistant coating, comprising at the top of main ring the first upper surface and extended loop
Second upper surface at top.
Preferably, the ceramic material of first upper surface and main ring inside side walls is directly exposed to the plasma.
The material for being preferably made from the coating includes yttrium oxide, yttrium fluoride, erbium oxide, silicon carbide, silicon nitride, oxidation
Zirconium, any one or their combination among aluminium oxide.
Preferably, the thickness range of the coating is 2 μm~200 μm.
Preferably, the range of the consistency of the coating is 0~10%.
Second technical solution of the present invention is a kind of plasma reactor, includes a pedestal in the plasma reactor,
It is provided with an electrostatic chuck above pedestal, the peripheral side of electrostatic chuck, the matrix of electrostatic chuck are set according to above-mentioned focusing ring
Peripheral side is equipped with dead ring, and the top of the dead ring is arranged in the focusing ring；Above the matrix of the electrostatic chuck according to
Secondary setting electrostatic chuck middle layer and electrostatic chuck ceramic layer, the electrostatic chuck middle layer are equipped with electrostatic chuck side seal outside
Circle；Wafer to be processed is arranged on the extended loop of the electrostatic chuck ceramic layer and the focusing ring, and is in the focusing
In the inside circumference of ring main ring.
Preferably, the side and institute of the extended loop inside circumferential surface of the focusing ring and the electrostatic chuck side seal circle
It states and is equipped with gap between the side of electrostatic chuck ceramic layer, the gap width is in the numberical range of setting.
Third technical solution of the present invention is a kind of corrosion-resistant means of defence based on above-mentioned focusing ring, a wafer to be processed
It is arranged on the electrostatic chuck, and edge of the edge of wafer beyond the electrostatic chuck and covers at the top of the focusing ring the
Two upper surface inside regions, so that the plasma resistant coating of the second upper surface inside region coating will not be by plasma bombardment.
Compared with the prior art, the present invention has the following advantages:
The present invention is by using plasma enhancing physical vapour deposition (PVD) (Plasma enhanced physical
Vapour deposition, PEPVD) realize high-densit Y is deposited on focusing ring2O3Coating, to overcome focusing ring by plasma
The problem of body etching loss, increase the service life of focusing ring, stable plasma etching technics, maintain focusing ring with it is quiet
The gap width set between electric card disk is constant, and then protects electrostatic chuck, increases electrostatic chuck and the use of other components
Service life reduces production cost.
Detailed description of the invention
Fig. 1 is a kind of focusing ring damaged structure schematic diagram of the present invention；
Fig. 2 is a kind of focusing ring structural schematic diagram of the present invention；
Fig. 3 is a kind of coating range schematic diagram in any one section of embodiment one of focusing ring of the present invention；,
Fig. 4 is the structural schematic diagram that wafer is had on a kind of focusing ring of the present invention；
Fig. 5 is a kind of coating range schematic diagram in any one section of embodiment two of focusing ring of the present invention；
Fig. 6 is that a kind of coating of focusing ring of the present invention uses PS Y2O3and PEPVD Y2O3The surface topography of two kinds of technique
The contrast schematic diagram of tissue.
Specific embodiment
The present invention is further elaborated by the way that a preferable specific embodiment is described in detail below in conjunction with attached drawing.
As shown in Fig. 2, a kind of focusing ring of the present invention, the focusing ring are located at electrostatic chuck peripheral side, make pottery with electrostatic chuck
Enamel coating 3 and 5 position of electrostatic chuck middle layer for being equipped with electrostatic chuck side seal circle 4 are corresponding；The electrostatic chuck ceramic layer 3
Above the electrostatic chuck middle layer 5, the electrostatic chuck middle layer 5 is quiet in plasma etch chamber positioned at being arranged in
6 top of matrix of electric card disk；6 peripheral side of matrix of the electrostatic chuck is equipped with dead ring 2, and the focusing ring 1 is located at described exhausted
The top of edge ring 2.
The focusing ring 1 includes main ring 10, and the extended loop that lateral 1 center of focusing ring is protruded in the main ring 10
11.The focusing ring 1 generally can preferred high purity ceramic material be made, such as silicon or silicon carbide etc..The extended loop 11
Upper surface be slightly below the upper surface of the electrostatic chuck ceramic layer 3；11 inside circumferential surface of extended loop and the electrostatic
Gap is equipped between the side of chuck side seal circle and the side of the electrostatic chuck ceramic layer 3, the gap width is in and sets
In fixed numberical range.
As shown in figure 4, the wafer 12 is in institute when placing wafer 12 to be processed on the electrostatic chuck ceramics 3
It states in 10 inside circumference of main ring, 10 upper surface of main ring etc. of 12 upper surface of wafer and focusing ring 1 is more or less than the main ring
10 upper surfaces.
The electrostatic chuck ceramic layer 3 is an insulating layer, for carrying workpiece to be added, such as wafer 12；The electrostatic card
It is equipped with electrode inside disk ceramic layer 3, adsorbs the workpiece to be added for connecting a controllable direct current power supply to generate electrostatic force；Electrostatic
Chuck middle layer 5 is another insulating layer, and heater, the heat that the heater generates are equipped with inside the electrostatic chuck middle layer 5
Amount is transferred to the electrostatic chuck ceramic layer 3 by the electrostatic chuck middle layer 5 to heat the workpiece to be added；Electrostatic chuck
Matrix 6, be used to support the electrostatic chuck ceramic layer 3 and electrostatic chuck middle layer 5.It is set inside the matrix 6 of electrostatic chuck
There is at least one cooling liquid flowing channel, the electrostatic chuck is cooled down for injecting coolant liquid.
Embodiment one, in conjunction with shown in Fig. 2 and Fig. 3, for the wafer of the corrosion resistancies element no requirement (NR) such as yttrium oxide, i.e., for
The insensitive wafer of the material granule for the coating that plasma exciatiaon goes out, or when not placing wafer on electrostatic chuck, to quiet
When electric card disk is made without wafer cleaner processing, optional all surfaces are sprayed with the focusing ring 1 of corrosion resistance coating, that is, pass through plasma
The coating process of body enhancing physical vapour deposition (PVD) the main ring 10 of the focusing ring 1 upper surface and inside circumferential surface and prolong
The upper surface and inside circumferential surface of stretching ring 11 all deposit the coating of high-densit resisting plasma corrosion.
Embodiment two, in conjunction with shown in Fig. 2 and Fig. 5, for the wafer that the corrosion resistancies element such as yttrium oxide requires, i.e., for
The wafer of the material granule sensitivity for the coating that plasma exciatiaon goes out, if 1 coating material of focusing ring described in plasma exciatiaon,
It can be mixed into the particle containing coating material element such as yttrium etc. in the plasma, polluting etc. on processed wafer influences.
To avoid the problem, the local focusing ring for being sprayed with corrosion resistance coating is then selected for such wafer in the present embodiment
1.When brilliant diameter of a circle is greater than the internal diameter of the extended loop 11 of the focusing ring 1, wafer setting is made pottery in the electrostatic chuck
On enamel coating 3, the marginal portion of wafer is made to cover the upper surface of the extended loop 11 close to one of 1 center of focusing ring
Point；By the coating process of plasma enhancing physical vapour deposition (PVD) the extended loop 11 inside circumferential surface with it is described
The upper surface portion for the extended loop 11 that wafer covers deposits the coating that high-densit plasma resistant 7 corrodes.
Embodiment three is equipped with the gap of setting width range, the gap between the focusing ring and the electrostatic chuck
Width is too small, then causes in assembling process, dirty since the mechanical friction between electrostatic chuck and focusing ring generates a large amount of particles
Plasma gas is contaminated, and then influences the wafer for needing to etch；As focusing ring inner sidewall will lead to gap by plasma gas corrosion
Width becomes larger, and gap express delivery, which becomes larger, can generate electrical breakdown, and electrical breakdown can damage electrostatic chuck, generates a large amount of particles, pollution etc. from
Sub- gas is splashed to crystal column surface, pollutes wafer；Therefore the present embodiment three provides a kind of corrosion-resistant means of defence of focusing ring,
I.e. focusing ring and be arranged on the focusing ring on electrostatic chuck deposit resisting plasma corrosion coating.Pass through the coating
The loss for slowing down control focusing ring, extends the service life of focusing ring, between making between the focusing ring and the electrostatic chuck
Gap width maintains in the numberical range of setting, extends the service life of electrostatic chuck, and electrostatic chuck side wall electric arc is avoided to put
Electricity issues particulate matter.
Coating described in above-described embodiment one to embodiment three, including but not limited to: yttrium oxide (Y2O3), yttrium fluoride
(YF3), erbium oxide (ErO2), silicon carbide (SiC), silicon nitride (Si3N4), zirconium oxide (ZrO2), aluminium oxide (Al2O3) among appoint
The combination of meaning one or their combination or they and other compositions；The thickness range of the coating is, for example, 2 μm~200 μ
m；The range of the consistency of the coating is, for example, 0~10%.
As shown in fig. 6, the coating of focusing ring into embodiment three of the embodiment of the present invention one is all made of plasma enhancing object
Physical vapor deposition (Plasma enhanced physical vapour deposition, PEPVD) is realized to sink on focusing ring
The coating of the high-densit resisting plasma corrosion of product, such as Y2O3Coating；To overcome focusing ring key position plasma etching to be lost
Problem reaches stable plasma etching technics, solves protection electrostatic chuck, reduces a series of production problems such as cost.It is described
PEPVD technique can prepare the controllable high-densit Y of thickness on cryogenic material surface2O3Equal ceramic coatings, the cryogenic material is such as
200 DEG C, for the coating layer thickness up to 0.1 millimeter or more, the coating consistency can reach imporosity rate；It overcomes aforementioned various
The deficiency of preparation technology of coating, it is thus achieved that production application target of the invention.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (9)
1. a kind of focusing ring for plasma treatment, which is characterized in that the focusing ring is made of ceramic materials, the focusing
Ring includes a main ring, and wherein the first upper surface at the top of main ring has the first height, is the cardiac prominence into focusing ring on the inside of main ring
Extended loop out, the second upper surface at the top of the extended loop have the second height, and the second height is less than first height,
Wherein the second upper surface inside region is coated with plasma resistant coating, and extended loop inside side walls are coated with plasma resistant simultaneously
Coating.
2. a kind of focusing ring as described in claim 1, which is characterized in that
Surface coated with the plasma resistant coating, comprising on the first upper surface at the top of main ring and second at the top of extended loop
Surface.
3. a kind of focusing ring as described in claim 1, which is characterized in that
The ceramic material of first upper surface and main ring inside side walls is directly exposed to the plasma.
4. a kind of focusing ring as described in claim 1, which is characterized in that the material that the coating is made includes yttrium oxide, fluorination
Yttrium, erbium oxide, silicon carbide, silicon nitride, zirconium oxide, any one or their combination among aluminium oxide.
5. a kind of focusing ring as described in claim 1, which is characterized in that
The thickness range of the coating is 2 μm~200 μm.
6. a kind of focusing ring as described in claim 1, which is characterized in that
The range of the consistency of the coating is 0~10%.
7. a kind of plasma reactor, includes a pedestal in the plasma reactor, is provided with an electrostatic chuck above pedestal,
It is characterized in that, the peripheral side of electrostatic chuck, the matrix peripheral side of electrostatic chuck is arranged in focusing ring according to claim 1
Equipped with dead ring, the top of the dead ring is arranged in the focusing ring；It is sequentially arranged above in the matrix of the electrostatic chuck
Electrostatic chuck middle layer and electrostatic chuck ceramic layer, the electrostatic chuck middle layer are equipped with electrostatic chuck side seal circle outside；To
The wafer of processing is arranged on the extended loop of the electrostatic chuck ceramic layer and the focusing ring, and is in the focusing ring main ring
Inside circumference in.
8. a kind of plasma reactor as claimed in claim 7, which is characterized in that the extended loop inside circumference table of the focusing ring
Gap, the gap are equipped between the side of the side and the electrostatic chuck ceramic layer of face and the electrostatic chuck side seal circle
Width is in the numberical range of setting.
9. a kind of corrosion-resistant means of defence based on focusing ring described in claim 1~8, which is characterized in that a wafer to be processed
It is arranged on the electrostatic chuck, and edge of the edge of wafer beyond the electrostatic chuck and covers at the top of the focusing ring the
Two upper surface inside regions, so that the plasma resistant coating of the second upper surface inside region coating will not be by plasma bombardment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710736818.3A CN109423606A (en) | 2017-08-24 | 2017-08-24 | Focusing ring and its corrosion-resistant means of defence |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710736818.3A CN109423606A (en) | 2017-08-24 | 2017-08-24 | Focusing ring and its corrosion-resistant means of defence |
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| CN109423606A true CN109423606A (en) | 2019-03-05 |
Family
ID=65501107
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710736818.3A Pending CN109423606A (en) | 2017-08-24 | 2017-08-24 | Focusing ring and its corrosion-resistant means of defence |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112652511A (en) * | 2019-10-12 | 2021-04-13 | 中微半导体设备(上海)股份有限公司 | Plasma etching device and edge ring therein |
| CN113802094A (en) * | 2020-06-16 | 2021-12-17 | 中微半导体设备(上海)股份有限公司 | Coating method of corrosion-resistant coating, plasma etching part and reaction device |
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| CN1643178A (en) * | 2002-03-21 | 2005-07-20 | 兰姆研究公司 | Low contamination components for semiconductor processing apparatus and methods for making components |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI |
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