CN109411526A - A kind of GaN base Schottky barrier diode with composite anode - Google Patents
A kind of GaN base Schottky barrier diode with composite anode Download PDFInfo
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- CN109411526A CN109411526A CN201810984708.3A CN201810984708A CN109411526A CN 109411526 A CN109411526 A CN 109411526A CN 201810984708 A CN201810984708 A CN 201810984708A CN 109411526 A CN109411526 A CN 109411526A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 80
- 239000002131 composite material Substances 0.000 title claims abstract description 73
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 36
- 238000005036 potential barrier Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 55
- 229910002601 GaN Inorganic materials 0.000 description 54
- 230000005684 electric field Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229910017083 AlN Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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- Power Engineering (AREA)
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Abstract
The present invention relates to a kind of GaN base Schottky barrier diode with composite anode, including substrate layer (101), buffer layer (102) and channel layer (103), wherein, buffer layer (102) and channel layer (103) are stacked gradually on the substrate layer (101)；Composite potential barrier layer on the channel layer (103) is set；Cathode (107), composite anode and p-type AlGaN cap layers (106) on the composite potential barrier layer are set.The GaN base SBD device with composite anode of the embodiment of the present invention reduces the cut-in voltage of device while improving device electric breakdown strength, alleviates the contradiction between device electric breakdown strength and cut-in voltage, improves the breakdown characteristics and reliability of device.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to a kind of GaN base Schottky barrier two with composite anode
Pole pipe.
Background technique
With the development of microelectric technique, traditional first generation Si semiconductor and second generation GaAs semiconductor power device performance
The theoretical limit that its material itself determines is had been approached, and is the semiconductor material with wide forbidden band of representative with gallium nitride (GaN), due to tool
There are bigger forbidden bandwidth, higher critical breakdown electric field and a higher electronics saturation drift velocity, and stable chemical performance, resistance to
High temperature, it is anti-radiation outstanding advantages of, show one's talent in terms of preparing high performance power device, in diode field, application potential is huge
Greatly.GaN base Schottky barrier diode (Schottky Barrier Diode, SBD) is substitution two pole of Si base schottky potential barrier
The ideal component of pipe.However, all there are many deficiencies from theory to technology for GaN base SBD device at present, performance reaches far away
To due level.Therefore, there are also very big potentialities to be exploited for GaN base SBD device.
In order to which excellent characteristics, the prior arts such as the high critical breakdown electric field that makes full use of GaN material propose following two
Method improves the voltage endurance of GaN base SBD device.The first is the pressure resistance that GaN base SBD device is improved by field plate structure
Characteristic, field plate techniques are a kind of traditional common terminal technology for being used to improve device pressure resistance.Field plate in GaN base SBD device
Basic structure is to prepare one layer of dielectric film in schottky metal electrode periphery by the method for deposit, photoetching and etching, will
Schottky electrode suitably extends to the top of medium, to form a circle MIM element structure in electrode periphery.
Field plate structure passes through the bending degree for changing anode (Schottky electrode) edge depletion layer boundary, to change the electricity in depletion layer
Field distribution reduces peak electric field strength, the breakdown voltage of Lai Tigao device.However the introducing of field plate can be such that device parasitic capacitor increases
Greatly, the high frequency and switching characteristic of device are influenced.Second is the pressure resistance spy that GaN base SBD device is improved by protection ring structure
Property, protection ring structure is also one of the structure generallyd use in current GaN base SBD device (the especially device of vertical structure).
This technique uses the method for selective oxidation first, forms layer of oxide layer at the edge of Schottky contacts, then basic herein
Upper diffusion or ion implanting form one layer of p-type and protect ring structure.Protect ring structure can effective modulation device surface field, make device
Part transverse electric field distribution is more uniform, to improve the breakdown voltage of device.But the realization of ring structure is protected to depend on half
The part doping that controllable precise is carried out in conductor material, will generally be realized by thermal diffusion or ion implantation technique.For
GaN material, diffusion coefficient of the p type impurity (such as Mg) in GaN is very low, so that can not be realized with the method for thermal diffusion accurate
Part doping；And ion implantation technique is not yet mature, caused lattice damage is difficult to be eliminated with the method for annealing.
In conclusion the prior art will affect its of device while improving the voltage endurance of traditional GaN base SBD device
His performance, and in traditional GaN base SBD device, Schottky contact barrier can influence simultaneously device positive cut-in voltage and
Reverse withstand voltage, so that the two is difficult to realize higher performance indicator simultaneously.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of GaN bases with composite anode
Schottky barrier diode.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of GaN base Schottky barrier diode with composite anode, comprising:
Substrate layer, buffer layer and channel layer, wherein buffer layer and channel layer are stacked gradually on the substrate layer, special
Sign is, further includes:
Composite potential barrier layer on the channel layer is set；
Cathode, composite anode and p-type AlGaN cap layers on the composite potential barrier layer are set.
In one embodiment of the invention, the composite potential barrier layer includes the first barrier layer and the second barrier layer, wherein
First barrier layer includes the first barrier sublayer and the second barrier sublayer, and second barrier layer is located at the first potential barrier
Between layer and the second barrier sublayer.
In one embodiment of the invention, first abarrier layer material includes AlxGa1-xN, wherein x range is 0.2
~0.3.
In one embodiment of the invention, second abarrier layer material includes AlxGa1-xN, wherein x range is 0.05
~0.2.
In one embodiment of the invention, the composite anode includes Ohmic contact and Schottky contacts, wherein described
Ohmic contact is located on first barrier sublayer, and the Schottky contacts are covered on first barrier sublayer and described ohm
In contact.
In one embodiment of the invention, the p-type AlGaN cap layers are located on second barrier layer.
In one embodiment of the invention, the length of the p-type AlGaN cap layers be less than or equal to the cathode with it is described multiple
The half of distance between Heyang pole.
In one embodiment of the invention, the doping concentration of the p-type AlGaN cap layers is 1 × 1016cm-3~1 ×
1020cm-3。
In one embodiment of the invention, further include be covered on the composite potential barrier layer, the p-type AlGaN cap layers,
Passivation layer on the composite anode and the cathode.
Compared with prior art, beneficial effects of the present invention:
1, the GaN base Schottky barrier diode with composite anode of the invention is by introducing composite potential barrier layer, p-type
AlGaN cap layers and composite anode reduce the cut-in voltage of device while improving device electric breakdown strength, to alleviate device
Contradiction between part breakdown voltage and cut-in voltage, so that the two while performance indicator with higher, improve hitting for device
Wear characteristic and reliability.
2, the present invention collectively constitutes composite anode using Ohmic contact and Schottky contacts, and 2DEG ditch is controlled in field by composite anode
Road on-off principle is introduced into GaN base SBD device, instead of traditional GaN base SBD device using Schottky come the conducting machine of control switch
System, so that device cut-in voltage is minimized.
3, present invention introduces composite potential barrier layer in the first barrier layer, the second barrier layer formed between channel layer respectively
Two-dimensional electron gas (two dimensional electron gas, 2DEG) concentration is different, is conducive to depletion region extending transversely；Together
When the p-type AlGaN cap layers introduced and composite potential barrier layer between the reverse biased pn junction that is formed there is depletion action, can be effectively reduced
Anode edge high electric field peak；Under the collective effect of composite potential barrier layer and p-type AlGaN cap layers, depletion region is extending transversely and complete
It exhausts, p-type AlGaN cap layers right end and cathode edge generate two new electric field spikes, make device surface field distribution more
Add uniformly, to improve the breakdown voltage of device.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the GaN base SBD device with composite anode provided in an embodiment of the present invention；
Fig. 2 is another cathode site schematic diagram provided in an embodiment of the present invention；
Fig. 3 is a kind of groove structure schematic diagram provided in an embodiment of the present invention；
Fig. 4 is a kind of scale diagrams of the GaN base SBD device with composite anode provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram for traditional GaN base SBD device that the prior art provides；
Fig. 6 is the GaN base SBD device provided in an embodiment of the present invention with composite anode and traditional GaN base SBD device
Transfer characteristic compares figure；
Fig. 7 is the GaN base SBD device provided in an embodiment of the present invention with composite anode and traditional GaN base SBD device
Reverse withstand voltage field distribution compares figure.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
The embodiment of the invention provides a kind of GaN base Schottky barrier diode with composite anode, comprising:
Substrate layer, buffer layer and channel layer, wherein buffer layer and channel layer are stacked gradually on the substrate layer；
Composite potential barrier layer on the channel layer is set；
Cathode, composite anode and p-type AlGaN cap layers on the composite potential barrier layer are set.
The GaN base Schottky barrier diode with composite anode of the embodiment of the present invention is by introducing composite potential barrier layer, P
Type AlGaN cap layers and composite anode reduce the cut-in voltage of device while improving device electric breakdown strength, to alleviate
Contradiction between device electric breakdown strength and cut-in voltage, so that the two while performance indicator with higher, improve device
Breakdown characteristics and reliability.
Embodiment two
Referring to Figure 1, Fig. 1 is a kind of GaN base Schottky barrier two with composite anode provided in an embodiment of the present invention
The structural schematic diagram of pole pipe, comprising:
Substrate layer 101 is stacked gradually in buffer layer 102, channel layer 103 and composite potential barrier layer on substrate layer 101；Multiple
The one end for closing potential barrier layer surface is provided with cathode 107, and the other end is provided with composite anode；P-type is provided on composite potential barrier layer
The side of composite anode is arranged in AlGaN cap layers 106, p-type AlGaN cap layers 106；In composite potential barrier layer, p-type AlGaN cap layers
106, the surface of cathode 107 and composite anode is covered with passivation layer 111.
Further, composite potential barrier layer includes the first barrier layer and the second barrier layer 105, wherein the first barrier layer includes
First barrier sublayer 1041 and the second barrier sublayer 1042, the second barrier layer 105 are located at the first barrier sublayer 1041 and the second gesture
It builds between sublayer 1042；Further, the length l of the second barrier layer 1053It needs to meet 2DEG to consume completely in the second barrier layer
It uses up, i.e. length of the length of the second barrier layer 105 more than or equal to 2DEG depletion region.
Further, the material that the first barrier layer uses is AlxGa1-xN, wherein x range is 0.2~0.3, preferably
Al0.25Ga0.75N；The material that second barrier layer 105 uses is AlxGa1-xN, wherein x range is 0.05~0.2, preferably
Al0.15Ga0.85N。
Further, cathode 107 is located on the second barrier sublayer 1042, and is formed between the first barrier sublayer 1042
Ohmic contact；Further, due to the length l of the second barrier layer 1053More than or equal to the length of 2DEG depletion region, therefore, cathode
107 can also be located on the second barrier sublayer 1042 and the second barrier layer 105 simultaneously, refer to Fig. 2, and Fig. 2 is that the present invention is implemented
Another cathode site schematic diagram that example provides.
Further, composite anode includes being located at first with Ohmic contact 108 and Schottky contacts 110, Ohmic contact 108
On barrier sublayer 1041, Schottky contacts 110 are covered in Ohmic contact 108 and the first barrier sublayer 1041；Further, exist
First barrier sublayer 1041 is etched with groove structure 109, refers to Fig. 3, and Fig. 3 is a kind of groove knot provided in an embodiment of the present invention
Structure schematic diagram, Schottky contact electrode 110 are covered in groove structure 109.
It should be noted that in embodiments of the present invention, Ohmic contact 108 refers to the shape between the first barrier sublayer 1041
At the electrode of Ohmic contact, Schottky contacts refer to the electrode that Schottky contacts are formed between the first barrier sublayer 1041, this
Composite anode is collectively formed in two electrodes.
Further, p-type AlGaN cap layers 106 are arranged on the second barrier layer 105, and 106 length of p-type AlGaN cap layers
l7Less than or equal to distance l between cathode 107 and composite anode6Half, refer to Fig. 4, Fig. 4 is provided in an embodiment of the present invention
A kind of scale diagrams of the GaN base SBD device with composite anode.
Further, the doping concentration of p-type AlGaN cap layers 106 is 1 × 1016cm-3~1 × 1020cm-3。
Specifically, forming hetero-junctions between composite potential barrier layer and channel layer, there are 2DEG at heterojunction boundary；Due to
Al content in one barrier layer is higher, and the polarization intensity between channel layer is stronger, and the 2DEG concentration at hetero-junctions is also higher；
Conversely, the Al content in the second barrier layer is lower, the polarization intensity between channel layer is weaker, the 2DEG concentration at hetero-junctions
It is relatively low；The 2DEG of low concentration facilitates the extending transversely of channel 2DEG depletion region, to introduce one at cathode edge newly
Electric field spike, keep device surface field distribution more uniform, breakdown voltage is improved.
Specifically, the reverse biased pn junction formed between p-type AlGaN cap layers and composite potential barrier layer has depletion action to 2DEG,
Can be with the field distribution of modulation device: when applying higher forward voltage to cathode under OFF state, p-type AlGaN cap layers be close to yin
Reverse-biased PN junction is formed between the region and composite potential barrier layer of pole, and then forms space-charge region, in composite potential barrier layer upper surface
Positive space charge is generated, positive space charge can attract electric field, to reduce 2DEG at the hetero-junctions of p-type AlGaN cap layers lower section
Concentration, extend the length of depletion region, p-type AlGaN cap layers close to cathode side formed a new electric field peak, make GaN
The surface electric field distribution of base SBD device is more uniform, and breakdown voltage is improved.
Specifically, the length of p-type AlGaN cap layers is less than or equal to the half of distance between cathode and composite anode, can mention
Guarantee big forward current density while high-breakdown-voltage, meets the requirement of power device.
Under aforementioned p-type AlGaN cap layers and the collective effect of composite potential barrier layer, the depletion region of device is extending transversely and complete
It exhausts, introduces a new electric field spike, the surface field of device at p-type AlGaN cap layers right end and cathode edge respectively
Be distributed it is more uniform, so that breakdown voltage is improved.
Specifically, collectively forming composite anode using Ohmic contact and Schottky contacts；When device in its natural state, sun
2DEG in the Schottky contacts lower channels of pole is completely depleted, and diode is in an off state.When the bias of anode increases,
Electronics in anode Schottky contact lower channels reassembles, when anodic bias is greater than channel cut-in voltage, electronics
Anode ohmic metal can be flowed to from cathode ohmic metal, realize that the low-loss of diode is opened.
Field control two-dimensional electron gas channel switches principle is introduced into GaN base SBD device by above-mentioned composite anode, instead of tradition
GaN base SBD device using Schottky come the conduction mechanism of control switch so that device cut-in voltage is minimized.
To sum up, under the collective effect of p-type AlGaN cap layers, composite potential barrier layer and composite anode, GaN base SBD device is hit
It wears voltage to be improved, while cut-in voltage is reduced, alleviates the contradiction between breakdown voltage and cut-in voltage, so that two
Performance indicator with higher, the breakdown characteristics and reliability of device are also improved person simultaneously.
In a specific embodiment, 101 material of substrate layer includes sapphire, one in Si, SiC, AlN, GaN, AlGaN
Kind is a variety of；Buffer layer 102,103 material of channel layer include one of GaN, AlN, AlGaN, InGaN, InAlN or more
Kind；The material of the first barrier layer and the second barrier layer 105 in composite potential barrier layer can also include GaN, AlN, InGaN, InAlN
One of or it is a variety of；111 material of passivation layer includes SiNx、Al2O3、AlN、Y2O3、La2O3、Ta2O5、TiO2、HfO2、ZrO2In
It is one or more；Cathode 107 and 108 material of Ohm contact electrode are metal alloy compositions, and common metal alloy has Ti/
Al/Ni/Au or Mo/Al/Mo/Au etc.；110 material of Schottky contact electrode is that metal of the workfunction range in 4.6eV-6eV closes
Golden material, common metal alloy have Ni/Au or Ti/Au etc.；The doped chemical of p-type AlGaN cap layers 106 can be Mg, Fe,
Zn, C etc., but not limited to this.
Embodiment three
On the basis of embodiment one and embodiment two, the embodiment of the invention also provides a kind of composite anode lateral dimensions
For 4.5 μm of GaN base SBD device, referring to Figure 1 and Fig. 4, wherein substrate layer 101, buffer layer 102, channel layer 103, compound
The lateral dimension l of barrier layer and passivation layer 1111It is 19.5 μm, 1041 length l of the first barrier sublayer2It is 4.5 μm, the second potential barrier
1042 length l of sublayer4It is 4.5 μm, the length l of intermediate second barrier layer 1053It is 10 μm, the length l of composite anode5It is 1 μm, it is multiple
The distance between Heyang pole and cathode 107 l6It is 14 μm, the length l of p-type AlGaN cap layers 1067It is 7 μm.
Fig. 5 is referred to, Fig. 5 is a kind of structural schematic diagram for traditional GaN base SBD device that the prior art provides, comprising: lining
Bottom 201, the buffer layer 202 on substrate layer 201, the channel layer 203 on buffer layer 202 are located on channel layer 203
Barrier layer 20, anode 206 and cathode 205 positioned at 204 surface both ends of barrier layer are covered on anode 206, cathode 205 and gesture
Passivation layer 207 in barrier layer 204.Wherein, substrate layer 201, buffer layer 202, channel layer 203, barrier layer 204 and passivation layer 207
Lateral dimension be 19.5 μm, 206 length of anode is 4.5 μm, and the spacing of cathode and anode is 14 μm.
Fig. 6 is referred to, to traditional GaN base SBD device of the above-mentioned GaN base SBD device with composite anode and the prior art
Part is emulated to obtain Fig. 6 using Silvaco software, and Fig. 6 is the GaN base provided in an embodiment of the present invention with composite anode
The transfer characteristic of SBD device and traditional GaN base SBD device compares figure.As seen from Figure 6, traditional devices (traditional GaN base SBD device
Part) cut-in voltage be 0.93V, the cut-in voltage of new device (the GaN base SBD device of the embodiment of the present invention) is 0.65V；Phase
Than traditional GaN base SBD device, the cut-in voltage of new device (the GaN base SBD device of the embodiment of the present invention) reduces 30%.
Fig. 7 is referred to, to traditional GaN base SBD device of the above-mentioned GaN base SBD device with composite anode and the prior art
Part is emulated to obtain Fig. 7 using Silvaco software, and Fig. 7 is the GaN base provided in an embodiment of the present invention with composite anode
The reverse withstand voltage field distribution of SBD device and traditional GaN base SBD device compares figure, and wherein x represents the cross of device and each structure
To size.As seen from Figure 7, there are an electric field spike, breakdown voltage 274V in traditional devices (traditional GaN base SBD device)；
Distinguish at p-type AlGaN cap layers right end and cathode edge in new device (the GaN base SBD device of the embodiment of the present invention)
A new electric field spike is introduced, is hit to produce three electric field spikes so that device surface field distribution is more uniform
Wearing voltage is 2782V, and breakdown voltage improves 915%.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of GaN base Schottky barrier diode with composite anode, including substrate layer (101), buffer layer (102) and ditch
Channel layer (103), wherein buffer layer (102) and channel layer (103) are stacked gradually on the substrate layer (101), and feature exists
In, further includes:
Composite potential barrier layer on the channel layer (103) is set；
Cathode (107), composite anode and p-type AlGaN cap layers (106) on the composite potential barrier layer are set.
2. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the composite potential barrier layer includes the
One barrier layer and the second barrier layer (105), wherein first barrier layer includes the first barrier sublayer (1041) and the second potential barrier
Sublayer (1042), second barrier layer (105) are located at first barrier sublayer (1041) and the second barrier sublayer (1042)
Between.
3. GaN base Schottky barrier diode as claimed in claim 2, which is characterized in that the first abarrier layer material packet
Include AlxGa1-xN, wherein x range is 0.2~0.3.
4. GaN base Schottky barrier diode as claimed in claim 2, which is characterized in that the second barrier layer (105) material
Material includes AlxGa1-xN, wherein x range is 0.05~0.2.
5. GaN base Schottky barrier diode as claimed in claim 2, which is characterized in that the composite anode includes ohm
Contact (108) and Schottky contacts (110), wherein the Ohmic contact (108) is located at first barrier sublayer (1041)
On, the Schottky contacts (110) are covered on first barrier sublayer (1041) and the Ohmic contact (108).
6. GaN base Schottky barrier diode as claimed in claim 2, which is characterized in that the p-type AlGaN cap layers (106)
On second barrier layer (105).
7. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the p-type AlGaN cap layers (106)
Length be less than or equal between the cathode (107) and the composite anode distance half.
8. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the p-type AlGaN cap layers (106)
Doping concentration be 1 × 1016cm-3~1 × 1020cm-3。
9. GaN base Schottky barrier diode as described in claim 1, which is characterized in that further include be covered on it is described compound
Passivation layer (111) on barrier layer, the p-type AlGaN cap layers (106), the composite anode and the cathode (107).
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