CN109411336A - Photolithography method - Google Patents
Photolithography method Download PDFInfo
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- CN109411336A CN109411336A CN201811319888.XA CN201811319888A CN109411336A CN 109411336 A CN109411336 A CN 109411336A CN 201811319888 A CN201811319888 A CN 201811319888A CN 109411336 A CN109411336 A CN 109411336A
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- dielectric layer
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- photolithography method
- violet curing
- photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention provides a kind of photolithography methods, can utilize simple technical process, solve the problems, such as bottom station foot when photoresist and dielectric layer acid base imbalance, and this method is specifically includes the following steps: provide substrate；Dielectric layer is formed in substrate, dielectric layer surface has basic group；The ultra-violet curing to dielectric layer is carried out, at least partly to remove basic group；After carrying out to the ultra-violet curing of dielectric layer, photoresist is applied on dielectric layer.Dielectric layer is handled using ultra-violet curing technique, it can be effectively reduced the basic group concentration of dielectric layer surface, solve the problems, such as photoresist and dielectric layer acid base imbalance, furthermore, ultra-violet curing simple process is convenient, without increasing additional deposition-etch step, the complexity and cost of manufacturing process are greatly reduced；Furthermore ultra-violet curing technique is while adjusting dielectric layer surface characteristic, additionally it is possible to reduce dielectric layer impurity content, improve the purity of dielectric material, promote device performance.
Description
Technical field
The present invention relates to field of semiconductor technology, more particularly it relates to a kind of photolithography method.
Background technique
In integrated circuit fabrication, critical size (Critical Dimension, CD) depends mainly on the size of photoetching
Technique.With the diminution of device size, the ultraviolet light that photoetching needs wavelength shorter and the photoresist being mutually compatible with therewith.In 248nm
In 193nm photoetching process, when photoresist is overlying on such as silicon nitride, silicon oxynitride dielectric layer material surface, exposure area
Photoresist cannot usually react completely, after development formed bottom station foot (footing) structure, influence critical size.
Bottom station foot is normally due to caused by the acid base imbalance of photoresist and dielectric layer, the method for currently solving the problems, such as this is
One layer of organic bottom antireflective layer BARC (Bottom Anti Reflective Coating) is first prepared on dielectric layer or is increased
Stick HMDS (Hexamethyldisilazane) is avoided while improving anti-reflection effect or increasing the adhesion of photoresist
Photoresist is directly contacted with dielectric layer.But this method not only will increase one of spin coating proceeding, but also also need to pass through quarter after exposing
Erosion removes BARC or HMDS, complex process.
Summary of the invention
In view of the drawbacks described above of the prior art, the present invention provides a kind of photolithography methods, can utilize simple technique mistake
Journey solves the problems, such as bottom station foot when photoresist and dielectric layer acid base imbalance.
The photolithography method is the following steps are included: provide substrate；Dielectric layer, the dielectric layer table are formed in the substrate
Face has basic group；The ultra-violet curing to the dielectric layer is carried out, at least partly to remove the basic group；Carry out pair
After the ultra-violet curing of the dielectric layer, photoresist is applied on the dielectric layer.
Dielectric layer is handled using ultra-violet curing technique, can be effectively reduced the dense of the basic group of dielectric layer surface
Degree, solves the problems, such as photoresist and dielectric layer acid base imbalance, in addition, ultra-violet curing simple process is convenient, it is additional without increasing
Deposition-etch step, greatly reduce the complexity and cost of manufacturing process；Furthermore ultra-violet curing technique is adjusting medium
While layer surface characteristic, additionally it is possible to reduce dielectric layer impurity content, improve the purity of dielectric material, promote device performance.
In more excellent technical solution of the invention, the material of the dielectric layer is silicon nitride, silicon oxynitride, silica or carbon
Silicon nitride.
Further, in more excellent technical solution of the invention, the dielectric layer is interlayer dielectric layer or inter-metal medium
Layer, thickness are greater thanWhen dielectric layer be interlayer dielectric layer or intermetallic dielectric layer when, can control thickness of dielectric layers or
Optimize ultra-violet curing condition, to prevent ultra-violet curing technique while generate unnecessary stress in the dielectric layer, influencing device can
By property.
Further, in more excellent technical solution of the invention, the dielectric layer is contact etching stop layer (Contact
Etch Stop layer, CESL), with a thickness ofWhen dielectric layer is contact etching stop layer, at etching contact quarter
Stop-layer is lost, when forming contact hole, which can also effectively improve the stress that CESL applies device architecture
Effect improves the carrier mobility rate of logical device.
Further, in more excellent technical solution of the invention, the dielectric layer is antireflection dielectric layer.The technique can be wide
The general photoetching process suitable for common setting antireflection dielectric layer, solves the problems, such as bottom station foot.
In more excellent technical solution of the invention, the photoresist is the positive photoresist for including photo-acid generator.
It is described ultraviolet in carrying out the ultra-violet curing step to the dielectric layer in more excellent technical solution of the invention
Solidification process 50-500 DEG C at a temperature of carry out.
It is described ultraviolet in carrying out the ultra-violet curing step to the dielectric layer in more excellent technical solution of the invention
Solidification process is in He, Ar, N2、H2、CO、CO2、O2、N2O、H2One or more of O steam, alcohol vapour gas is as protection
It is carried out in the environment of gas.Preferably, the UV curing process is in He, Ar, N2And one of other inert gases or a variety of
Gas carries out in the environment of being used as protection gas.
Further, in more excellent technical solution of the invention, the air pressure range of the protection gas is 0.1-760Torr.
In more excellent technical solution of the invention, the dielectric layer is silicon nitride material, using plasma-reinforced chemical gas
Phase deposition method is formed, and reaction gas used by deposition process includes SiH4、NH3And N2。
Further, in more excellent technical solution of the invention, SiH4Flow be 30-600sccm, NH3Flow be
100-5000sccm, N2Flow be 5000-20000sccm.
Detailed description of the invention
Fig. 1 is the apparatus structure schematic diagram that ultra-violet curing processing is carried out in one embodiment of the present of invention；
Fig. 2 is ultra-violet curing front and back dielectric layer surface atomic arrangement change mechanism figure in Fig. 1 embodiment；
Fig. 3 is the infrared spectrogram of dielectric layer surface before and after ultra-violet curing in Fig. 1 embodiment.
Specific embodiment
As stated in the background art, when photoresist is overlying on such as silicon oxynitride, silicon nitride dielectric layer material surface, exposure
The photoresist in region cannot usually react completely, form bottom station leg structure after development, influence critical size.Bottom station foot is general
Due to photoresist with caused by the acid base imbalance of dielectric layer: when the opposite meta-alkalescence of dielectric layer or hydrophily, light acid can be neutralized
Or be absorbed into substrate, cause photoresist bottom deprotection reaction to give a discount, to generate bottom station foot after development.
In order to solve problem above, the present invention provides a kind of photolithography methods, before applying photoresist, to dielectric layer into
The processing of row ultra-violet curing removes its surface at least partly basic group, to reduce the alkalinity of dielectric layer surface, to solve photoetching
Glue and dielectric layer acid base imbalance and lead to the problem of bottom station foot.
Hereinafter, generaling description the preferred embodiment of the present invention on one side referring to attached drawing while.In addition, the embodiment of the present invention is simultaneously
Following embodiments are not limited to, it can be using various embodiments within the scope of the technical concept of the present invention.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
A kind of photolithography method is present embodiments provided, specifically includes the following steps:
Firstly, providing substrate 100.
Substrate 100 can be semiconductor substrate arbitrarily with or without device architecture.In some implementations of the invention
Example in, substrate 100 can be body silicon perhaps silicon-on-insulator (SOI) described substrate be also possible to germanium, germanium silicon, GaAs or
Germanium on insulator.In the present embodiment, the substrate 100 is the silicon substrate for being formed with device architecture thereon.
Later, deposition forms dielectric layer 200 on the substrate 100, and the upper surface of the dielectric layer 200 has basic group
Group；
The formation of dielectric layer 200 can deposit (PECVD), low-pressure chemical vapor deposition using plasma enhanced chemical vapor
(LPCVD), aumospheric pressure cvd (APCVD) or other suitable techniques, as spin coating proceeding is formed.The material of dielectric layer 200
Material can be the materials such as doped or undoped silicon nitride, carbonitride of silicium, silicon oxynitride.In the present embodiment, dielectric layer 200 is used
Silicon nitride material is made using plasma enhanced chemical vapor deposition method.
Specifically, in the present embodiment, the reaction gas that plasma reinforced chemical vapour deposition uses includes SiH4、NH3And N2,
Wherein SiH4Flow be 30-600sccm, NH3Flow be 100-5000sccm, N2Flow be 5000-20000sccm, instead
Answering pressure is 1-10Torr, and temperature is 200-450 DEG C.The film layer obtained under this condition usually has a large amount of hydrogen atom, this reality
It applies in example, silicon nitride film surface has 16-35% with hydrogen atom existing for Si -- H bond or N-H key-shaped formula, part N-H key combination
Be formed as amino, technical solution provided in this embodiment can greatly reduce the content of its Surface Hydrogen, and then reduce amino and contain
Amount reduces the formation of bottom station foot.
In some embodiments of the invention, dielectric layer 200 can be interlayer dielectric layer, intermetallic dielectric layer, can also be with
It is that is be made of dielectric material be used to form the film layer of other function layer, such as contact etching stop layer, anti-reflecting layer, covering
Layer, mask layer, sidewall structure etc..The thickness of dielectric layer 200 can be adjusted according to the actual situation.In the present embodiment, medium
Layer 200 is for etching the silicon nitride film layer for forming sidewall structure.
In the present embodiment, dielectric layer 200 is made using silicon nitride material, and surface is rich in amino, can be sent out with hydrogen ion
Raw neutralization reaction.It should be noted that, although in the present embodiment as an example with amino, but can be can for basic group
Any group of neutralization reaction occurs with hydrogen ion, dielectric layer 200 can be any film layer that surface has basic group.
Then, with reference to Fig. 1, it is indoor that the substrate 100 that surface is formed with dielectric layer 200 is transferred to ultra-violet curing process cavity
On substrate 302, ultra-violet curing processing is carried out.
Ultra-violet curing processing chamber includes ultraviolet source 304, is set to being isolated between ultraviolet source 304 and substrate 302
Window 306, isolation window 306 is for preventing light source to be contaminated.Protective gas, the protective gas that can be used are full of in processing chamber
Including but not limited to Types Below: He, Ar, N2And other inert gases.It is He in the present embodiment.
Gas outlet 308 is connected with vacuum pump (not shown), in some other embodiment of the invention, the gas outlet
308 can cooperate blow device to purge crystal column surface, be replaced with facilitating to surface atom.The air pressure range of gas
0.1-760Torr can be selected from.
Ultraviolet source 304 can be using in mercury lamp, xenon lamp, deuterium lamp, Excimer lamp, excimer laser, plasma source
One or more of combinations.In the present embodiment, ultraviolet source 304 is mercury lamp, can be in 100 surface formation energy metric density of substrate
For 1 μ W/cm2-10W/cm2Ultraviolet irradiation.
Substrate 302 can heat substrate 100, and in the present embodiment, UV curing process is performed under heating conditions,
Specifically, it within the temperature range of substrate 100 is heated to 50-500 DEG C by substrate 302, while opening ultraviolet light and being irradiated, this reality
It applies in example, irradiation time 0.5-30min.
With reference to Fig. 2, before by ultra-violet curing processing, the atomic arrangement on 200 surface of dielectric layer as shown in the left side Fig. 2,
Since the silicon nitride film surface formed PECVD has a large amount of hydrogen atoms, exist in the form of Si -- H bond and N-H, due to hydrogen atom
Content is higher, and N-H proportion is also relatively high, therefore is formed with a large amount of amino on silicon nitride film surface.And using this
After the technical solution that embodiment provides carries out ultra-violet curing processing to 200 surface of dielectric layer, as shown in the right side Fig. 2, due to ultraviolet
The irradiation of light, silicon nitride material surface hydrogen atom content will be greatly reduced, and part N-H key disconnects, and nitrogen-atoms is transferred and Si atom
Form covalent bond.
Fig. 3 is the spectrogram characterized using Fourier transform infrared spectroscopy (FTIR) to material surface, wherein horizontal seat
It is designated as wavelength, ordinate is the absorptivity after normalization.By characterization result it is found that N-H key stretching vibration peak in surfacing,
The peak intensity of Si -- H bond stretching vibration peak and Si-NH-Si flexural vibrations peak is reduced after ultra-violet curing is handled, it is meant that big
Hydrogeneous covalent bond is measured to be disconnected after ultra-violet curing processing, so that content of the hydrogen atom in material is greatly reduced, alkalinity
Group largely reduces.And the peak intensity of Si-N key stretching vibration peak then correspondinglys increase, surface Si-N linkage content correspondinglys increase.The light
Spectrogram further demonstrate atomic arrangement structure that Fig. 2 is provided ultra-violet curing before and after the processing caused by the conjecture that changes.
In addition, ultra-violet curing processing carries out under the conditions of high temperature high-energy irradiation, the size that also will lead to material voids is received
Contracting, and then stress is generated in film layer.In some embodiments of the invention, dielectric layer 200 can be contact etching and stop
Only layer, the contact etching stop layer with a thickness ofWhen dielectric layer is contact etching stop layer, at etching contact quarter
Stop-layer is lost, when forming contact hole, which can also effectively improve the stress that CESL applies device architecture
Effect improves the carrier mobility rate of logical device.In other embodiments of the invention, dielectric layer 200 be can also be
Interlayer dielectric layer or intermetallic dielectric layer, thickness are greater thanTo optimize ultra-violet curing technique while prevent in dielectric layer
It is middle to generate unnecessary stress, influence device reliability.
Later, it by ultra-violet curing treated 200 surface spin coating photoresist of dielectric layer, and exposes, develop.
Specifically, photoresist is chemical-amplification positive photoresist, and emulsion is photo-acid generator (PAG).Photo-acid generator
It is known, and can be by being exposed to such as g-, h- i- line, the suitable spy of 248nm, 193nm or other
Excited under the long light of standing wave, or by being exposed in electron beam to generate acid, depend on the circumstances acid energy decomposing protection base with
Form the carboxyl or hydroxyl of deprotection.Photo-acid generator may is that salt, such as trifluoromethane sulfonic acid triphenylsulfonium, fluoroform
Base sulfonic acid (to tert-butyl-phenyl) diphenyl sulfonium, trifluoromethane sulfonic acid three (to tert-butyl-phenyl) sulfonium, p-methyl benzenesulfonic acid triphenyl
Sulfonium；Nitrobenzyl derivatives, such as p-methyl benzenesulfonic acid 2- p-Nitrobenzyl, p-methyl benzenesulfonic acid 2,6- dinitro benzyl ester and to toluene sulphur
Acid 2,4- dinitro benzyl ester；Sulphonic acid ester, such as 1,2,3- tri- (mesyloxy) benzene, 1,2,3- tri- (trimethyl fluoride sulfonyl oxygroups)
Benzene and 1,2,3- tri- (tolysulfonyl oxygroup) benzene；Diazomethane derivative, for example, it is two (benzenesulfonyl) diazomethanes, two (right
Tosyl) diazomethane；Glyoxime derivative, for example, double-O- (tolysulfonyl)-alpha-alpha-dimethyl glyoxime and double-O-
(normal butane sulphonyl)-alpha-alpha-dimethyl glyoxime；The sulfonate derivatives of N- hydroxyimide compound, for example, N- hydroxysuccinimidyl
Acid imide methanesulfonate ester, n-hydroxysuccinimide trifluoromethane sulfonic acid ester；Halogen triaizine compounds, such as 2- (4- methoxy
Base phenyl) bis- (the trichloromethyl) -1,3,5-triazines of -4,6- and bis- (trichloromethyl) -1 2- (4- methoxyl group naphthalene) -4,6-, 3,
The combination of various photo-acid generators also can be used in 5- triazine.Suitable photo-acid generator can be obtained from multiple channel, such as be come
Derived from the IRGACURE trade mark of BASF AG's (Ludwigshafen, Germany).
Chemical-amplification positive photoresist with photo-acid generator can decompose under certain illumination condition generates hydrogen ion,
On 200 surface of dielectric layer handled without ultra-violet curing, there are a large amount of amino, by part neutralize hydrogen ion hinder reaction into
Row, and the photoresist of exposure area is caused not react completely, form bottom legs；And in the present embodiment, to dielectric layer
After 200 surfaces carry out ultra-violet curing processing, due to the reductions of a large amount of fractures and hydrogen atom content of N-H key, in a large amount of amino
Nitrogen-atoms transfers surface amino groups concentration to be greatly reduced, and then prevent or reduce the formation of bottom legs with Si atomic bonding.
In some other embodiment of the invention, which can also be antireflection dielectric layer.Further,
The antireflection dielectric layer can be made of silicon oxy-nitride material.By increasing antagonistic reflex dielectric layer before applying photoresist
Ultra-violet curing processing step, can effectively solve the problem that bottom station foot problem, improve the critical size of photoetching process.
So far, it has been combined attached drawing and describes technical solution of the present invention, still, skilled addressee readily understands that
It is that protection scope of the present invention is expressly not limited to these specific embodiments.Under the premise of without departing from the principle of the present invention,
Those skilled in the art can make equivalent change or replacement to the relevant technologies feature, the technology after these changes or replacement
Scheme will fall within the scope of protection of the present invention.
Claims (10)
1. a kind of photolithography method, which comprises the following steps:
Substrate is provided；
Dielectric layer is formed in the substrate, the dielectric layer surface has basic group；
The ultra-violet curing to the dielectric layer is carried out, at least partly to remove the basic group；
After carrying out to the ultra-violet curing of the dielectric layer, photoresist is applied on the dielectric layer.
2. photolithography method as described in claim 1, which is characterized in that the material of the dielectric layer be silicon nitride, silicon oxynitride,
Silica or carbonitride of silicium.
3. photolithography method as claimed in claim 2, which is characterized in that the dielectric layer is antireflection dielectric layer.
4. photolithography method as claimed in claim 2, which is characterized in that the dielectric layer is contact etching stop layer, thickness
For
5. photolithography method as described in claim 1, which is characterized in that the photoresist is the positivity light for including photo-acid generator
Photoresist.
6. photolithography method as described in claim 1, which is characterized in that carrying out the ultra-violet curing step to the dielectric layer
In, the UV curing process 50-500 DEG C at a temperature of carry out.
7. photolithography method as claimed in any one of claims 1 to 6, which is characterized in that carrying out to the ultraviolet solid of the dielectric layer
Change in step, the UV curing process is in He, Ar, N2One or more of gas as protection gas in the environment of carry out.
8. photolithography method as claimed in claim 7, which is characterized in that the air pressure range of the protection gas is 0.1-760Torr.
9. photolithography method as described in claim 1, which is characterized in that the dielectric layer is silicon nitride material, using plasma
Enhancing chemical vapor deposition method is formed, and reaction gas used by deposition process includes SiH4、NH3And N2。
10. photolithography method as claimed in claim 9, which is characterized in that SiH4Flow be 30-600sccm, NH3Flow be
100-5000sccm, N2Flow be 5000-20000sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811319888.XA CN109411336A (en) | 2018-11-07 | 2018-11-07 | Photolithography method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811319888.XA CN109411336A (en) | 2018-11-07 | 2018-11-07 | Photolithography method |
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| CN109411336A true CN109411336A (en) | 2019-03-01 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099954A1 (en) * | 2002-11-27 | 2004-05-27 | International Business Machines Corporation | Method for reducing amine based contaminants |
| KR20070070565A (en) * | 2005-12-29 | 2007-07-04 | 동부일렉트로닉스 주식회사 | Photolithography for improving uniformity of critical dimension of pattern and contact hole forming method for using the same |
-
2018
- 2018-11-07 CN CN201811319888.XA patent/CN109411336A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099954A1 (en) * | 2002-11-27 | 2004-05-27 | International Business Machines Corporation | Method for reducing amine based contaminants |
| KR20070070565A (en) * | 2005-12-29 | 2007-07-04 | 동부일렉트로닉스 주식회사 | Photolithography for improving uniformity of critical dimension of pattern and contact hole forming method for using the same |
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Application publication date: 20190301 |